CN110224041B - Photoelectric detector containing graphene sandwich structure - Google Patents
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- CN110224041B CN110224041B CN201910504453.0A CN201910504453A CN110224041B CN 110224041 B CN110224041 B CN 110224041B CN 201910504453 A CN201910504453 A CN 201910504453A CN 110224041 B CN110224041 B CN 110224041B
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Abstract
The invention belongs to the technical field of photoelectric detection, and particularly relates to a dual-waveband high-gain photoelectric detector comprising a graphene sandwich structure. The invention provides a photoelectric detector comprising a graphene sandwich structure, which comprises a light absorption layer 1(1), a graphene layer 2 and a light absorption layer 2(3) from bottom to top in sequence, wherein the graphene layer 2 is arranged between the light absorption layer 1 and the light absorption layer 2(3) to form the sandwich structure; and the surface of the graphene layer (2) is also provided with a metal electrode (4). The unique sandwich structure of the graphene combined with the double light absorption material layers can simultaneously realize respective response to light of different wave bands and obtain good response effect. In addition, the photoelectric detector is simple in preparation process flow and has strong practicability.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection, and particularly relates to a dual-waveband high-gain photoelectric detector comprising a graphene sandwich structure.
Background
The photoelectric detection technology is used for reproducing and expanding human eyes, and the ultraviolet, infrared and other photoelectric detectors are used for realizing the imaging effect which cannot be achieved by the human eyes under special environments such as night. However, single band photodetection has its own limitations. For example, although infrared detection has the advantages of breaking through the limit of human eyes and realizing night vision, the infrared detection also has the defect that the imaging does not conform to the vision habit; although visible light detection has the advantages of matching with the imaging habits of human eyes, infrared and night targets cannot be found. Therefore, researchers thought that by using an image fusion technique to perform fusion processing on two or more bands of photoelectric information, the detection advantages of the respective bands can be simultaneously exerted, and the target recognition capability can be improved.
Currently, there are two ways to implement dual-band photodetection on hardware level. Firstly, based on the broadband detector that responds two wave bands simultaneously, design two sets of optical lens that see through two wave bands respectively, gather the photoelectric information of two wave bands respectively, this kind of mode is higher to optical design requirement, can increase imaging system volume at double in the in-service use. The other mode is based on the combination of detectors respectively responding to two wave bands, wherein the detector 1 only responds to the wave band 1, and the detector 2 only responds to the wave band 2, so that only one set of optical system is needed, and the optical design can be greatly simplified. Taking the design of a mercury cadmium telluride infrared detector as an example, a back illumination mode is adopted, and incident light with short wavelength is completely absorbed by the detector 1 by controlling the thickness of an absorption layer of the detector 1, so that the detection 2 only responds to long wavelength, and the response current of two wave bands is distinguished. The above two-band working mode has been applied to infrared detectors such as mercury cadmium telluride. However, as with a single-band detector, a dual-band detector based on materials such as mercury cadmium telluride also has the problems of small gain and weak response capability to weak signals.
Graphene is a new two-dimensional atomic crystal material, and the researchers of the present invention think that the combination of the graphene material with ultrahigh carrier mobility and the quantum dot material can realize the gain over 108The photodetector of (1); in addition, due to the ultra-wide light absorption band and ultra-fast carrier mobility, and the silicon-based integrated circuit technologyAnd the compatibility also enables the graphene material to be particularly suitable for manufacturing a photoelectric detector. Based on consideration of various comprehensive factors and previous investigation, the invention provides the dual-waveband high-gain photoelectric detector comprising the graphene sandwich structure, which can simultaneously realize respective response to light of different wavebands and obtain a good response effect, and has a high-gain effect compared with the traditional detector.
Although the current photoelectric detector based on the graphene material has remarkable progress in the aspects of broadband detection and ultra-fast photoelectric detector, the report that the high-gain device based on the graphene is used for dual-band detection is not available, so that the invention has remarkable progress and great economic value.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a photodetector including a graphene sandwich structure, and the specific scheme is as follows:
a photoelectric detector comprising a graphene sandwich structure comprises a first light absorption layer, a graphene layer and a second light absorption layer from bottom to top in sequence, wherein the graphene layer is arranged between the first light absorption layer and the second light absorption layer to form the sandwich structure; and the surface of the graphene layer is also provided with a metal electrode. The photoelectric detector adopts a special sandwich structure, the graphene material between the first light absorption layer and the second light absorption layer is the key for realizing high gain of the detector, and the first light absorption layer and the second light absorption layer generate electron hole pairs and then are transported to electrodes by the graphene to form photocurrent.
Furthermore, the material of the first light absorption layer is a short wave absorption material and does not absorb long waves; the graphene layer simultaneously provides high gain carrier transport channels for the first and second light absorbing layers.
Furthermore, the photoelectric detector adopts a back incidence mode, namely the incidence direction of incident light passes through the graphene layer from the first light absorption layer and then reaches the second light absorption layer; since the first light absorbing layer does not absorb the long wave, the long wave part of the incident light may be absorbed by the second light absorbing layer after passing through the first light absorbing layer and the graphene layer.
Further, the thickness of the first light absorption layer should be greater than the material absorption incident light cut-off wavelength length.
Further, the material of the light absorption layer 1 is a monocrystalline silicon thin sheet; the second light absorption layer is made of quantum dot materials.
Preferably, the material of the second light absorption layer is PbS sol-gel type quantum dot material.
The photoelectric detector comprising the graphene sandwich structure provided by the invention has a special sandwich structure, namely the photoelectric detector comprises a monocrystalline silicon thin light absorption layer, a graphene transmission layer and a quantum dot light absorption layer, wherein the graphene layer is arranged between the two light absorption layers to form the sandwich structure. Because the cut-off absorption wavelength of the quantum dot material is not uniform, complete absorption of short wavelength can not be realized by adopting the normal incidence mode of the traditional detector, so that the back incidence mode is adopted, the thinned monocrystalline silicon is used as the short wavelength light absorption layer to realize the light filtering effect, and the quantum dot material layer realizes the absorption of long-wavelength band light, thereby achieving the purpose of simultaneously responding to the double-wavelength band light. Meanwhile, the graphene material and the two interlayers form a heterojunction, a built-in electric field formed by the heterojunction is helpful for realizing the light modulation effect on the photo-generated electron hole pairs when light enters, and the transmission cycle of carriers can be rapidly completed by the characteristic of high carrier mobility of the graphene, so that the high-gain response performance of the detector is realized.
An object of the present invention is to provide a method for preparing the photodetector with the graphene sandwich structure, wherein the specific scheme is as follows:
a preparation method of the photoelectric detector comprises the following steps:
1) preparing a monocrystalline silicon slice;
2) preparing graphene;
3) transferring graphene onto a monocrystalline silicon wafer;
4) forming a pattern on the surface of graphene;
5) preparing a metal electrode on the surface of the graphene;
6) and preparing the quantum dot absorption layer.
Further, in the step 1), alkaline solution is adopted to carry out twice corrosion on the monocrystalline silicon, and the thickness of the prepared monocrystalline silicon slice is 8-10 mu m; and 2) preparing graphene by adopting a chemical vapor deposition method, wherein ethanol is used as a raw material, and the number of prepared graphene layers is 1-2.
Preferably, the thickness of the monocrystalline silicon thin slice is 10 μm.
Further, in the step 3), the graphene is transferred to the surface of the monocrystalline silicon sheet by adopting a wet transfer technology.
Further, patterning the surface of the graphene to form a graphene strip by adopting a micro-nano lithography exposure process and an oxygen plasma etching technology in the step 4); and 5) depositing metal on the surface of the graphene by adopting a photoetching exposure technology and a magnetron sputtering or evaporation technology to form a metal electrode.
Preferably, the metal electrode is a metal combination of chromium and gold.
Further, quantum dot materials with peak wavelength of 1.2-1.6 μm are selected in the step 6), and the quantum dot layer is prepared by standing, spin coating and replacing.
Preferably, the peak wavelength of the quantum dot material is 1.5 μm.
Has the advantages that:
1) the invention provides a photoelectric detector comprising a graphene sandwich structure, which simultaneously realizes respective response to light of different wave bands and obtains a good response effect, and has a high gain effect compared with the traditional detector.
2) The photoelectric detector with the graphene interlayer structure provided by the invention has the advantages of simple preparation process flow, close combination with a semiconductor micro-nano technology, strong practicability and capability of realizing a high-gain detection effect on a dual-waveband optical signal.
3) The photoelectric detector with the graphene sandwich structure can solve the problems that the conventional dual-band detector based on materials such as mercury cadmium telluride also has small gain and weak response capability to weak signals; and no report that a high-gain device based on graphene is used for dual-band detection exists at present, so that the method has strong technical prospect and great potential economic value.
Drawings
Fig. 1 is a cross-sectional view of a graphene sandwich structured photodetector.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The examples are provided for better illustration of the present invention, but the present invention is not limited to the examples. Therefore, those skilled in the art should make insubstantial modifications and adaptations to the embodiments of the present invention in light of the above teachings and remain within the scope of the invention.
Example 1
As shown in connection with figure 1. The photoelectric detector comprising the graphene sandwich structure comprises a first light absorption layer 1, a graphene layer 2 and a second light absorption layer 3 from bottom to top in sequence, wherein the graphene layer 2 is arranged between the first light absorption layer 1 and the second light absorption layer 3 to form the sandwich structure; and a metal electrode (4) is also arranged on the surface of the graphene layer 2.
The first light absorption layer 1 is made of short wave absorption material and does not absorb long wave; the graphene layer 2 provides high gain carrier transport channels for both the first light absorbing layer 1 and the second light absorbing layer 3. Wherein the material of the first light absorption layer 1 is a monocrystalline silicon thin sheet; the material of the second light absorption layer 3 is a quantum dot material, preferably a PbS sol-gel type quantum dot material.
The photoelectric detector adopts a back incidence mode, namely the incidence direction of incident light is from the first light absorption layer 1 to the second light absorption layer 3 through the graphene layer (2); the long-wave part of the incident light is absorbed by the second light-absorbing layer 3 after passing through the first light-absorbing layer 1 and the graphene layer (2). Wherein the thickness of the first light absorption layer 1 is 10 μm.
Example 2
Preparation method of photoelectric detector
1. And (5) preparing thinned monocrystalline silicon. The preparation method comprises the steps of firstly corroding monocrystalline silicon to about 10 mu m by using KOH solution, then fixing a substrate on a quartz substrate coated with polyimide in a spinning mode, carrying out a drying process at about 300 ℃, and then carrying out secondary corrosion by using the KOH solution to reduce the thickness of the monocrystalline silicon to about 1.1 mu m of the absorption thickness of the cut-off wavelength of a silicon wafer.
2. And preparing graphene. Preparing a graphene film by using chemical vapor deposition equipment, selecting a flat copper foil as a growth substrate, and taking analytically pure ethanol as a raw material. Under the action of high temperature, carbon atoms in the ethanol are deposited on the surface of the substrate to form a graphene film after adsorption, migration and other processes on the copper substrate. The number of layers of the finally obtained graphene film is controlled to be 1-2.
3. And transferring the graphene. And finishing the transfer of the graphene film on the surface of the thinned monocrystalline silicon by using a wet transfer technology. The reaction takes HCl + H2O2 as an etching solution, and then the prepared graphene (on a copper foil substrate) is immersed in the etching solution. The reaction time is about 12 hours, after the copper substrate is completely dissolved, the upper graphene layer which is not immersed in the etching solution can be suspended on the surface of the solution, and the lower graphene layer and the amorphous carbon can sink to the bottom of the solution. And fishing out the graphene film by using a gauze, and washing the graphene film for multiple times by using deionized water to remove ions on the surface of the graphene. And finally transferring the clean graphene film to the thinned monocrystalline silicon surface and drying.
4. And patterning the graphene. Patterning the graphene film to form a graphene strip by utilizing a micro-nano photoetching exposure process and an oxygen plasma etching technology, and removing the photoresist by using acetone.
5. And preparing a metal electrode. The method includes the steps of utilizing a micro-nano photoetching exposure process to achieve electrode patterning on the surface of graphene, depositing metal in a magnetron sputtering or electron beam evaporation mode, and stripping the metal in combination with acetone, wherein Cr + Au metal combination is adopted in the embodiment, and the metal thickness can be 5nm +45 nm.
6. And (3) preparing a quantum dot absorption layer. The quantum dot material is prepared on the surface of a graphene film by selecting PbS sol type quantum dots with peak wavelength of about 1.5 mu m, standing, spin-coating and replacing, and removing redundant quantum dots by Ar gas plasma etching technology to finally form an interlayer structure.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (9)
1. The photoelectric detector comprising the graphene sandwich structure is characterized in that the photoelectric detector sequentially comprises a first light absorption layer (1), a graphene layer (2) and a second light absorption layer (3) from bottom to top, and the graphene layer (2) is arranged between the first light absorption layer (1) and the second light absorption layer (3) to form the sandwich structure; the surface of the graphene layer (2) is also provided with a metal electrode (4), and the first light absorption layer (1) is made of a short wave absorption material and does not absorb long waves; the graphene layer (2) provides high gain carrier transport channels for the first light absorbing layer (1) and the second light absorbing layer (3) simultaneously.
2. A photodetector according to claim 1, characterized in that the photodetector is arranged in a back-incident manner, i.e. the incident light is directed from the first light-absorbing layer (1) through the graphene layer (2) to the second light-absorbing layer (3); the long-wave part of the incident light is absorbed by the second light absorption layer (3) after passing through the first light absorption layer (1) and the graphene layer (2).
3. A photodetector according to claim 1, characterized in that the thickness of the first light absorbing layer (1) is larger than the cut-off wavelength length of the layer material absorbing the incident light.
4. A photodetector according to claim 1, characterized in that the material of the first light absorbing layer (1) is a thin sheet of monocrystalline silicon; the material of the second light absorption layer (3) is quantum dot material.
5. A method of fabricating the photodetector of claim 1, comprising the steps of:
1) preparing a monocrystalline silicon slice;
2) preparing graphene;
3) transferring graphene onto a monocrystalline silicon wafer;
4) forming a pattern on the surface of graphene;
5) preparing a metal electrode on the surface of the graphene;
6) and preparing the quantum dot absorption layer.
6. The preparation method according to claim 5, wherein the single crystal silicon is twice etched by the alkaline solution in the step 1), and the thickness of the prepared single crystal silicon slice is 8-10 μm; and 2) preparing graphene by adopting a chemical vapor deposition method, wherein ethanol is used as a raw material, and the number of prepared graphene layers is 1-2.
7. The preparation method according to claim 5, wherein the step 3) adopts a wet transfer technology to transfer the graphene to the surface of the monocrystalline silicon sheet.
8. The preparation method according to claim 5, wherein in the step 4), a micro-nano lithography exposure process and an oxygen plasma etching technology are adopted to pattern the surface of the graphene to form a graphene strip; and 5) depositing metal on the surface of the graphene by adopting a photoetching exposure technology and a magnetron sputtering or evaporation technology to form a metal electrode.
9. The method of claim 5, wherein the quantum dot material with peak wavelength of 1.2-1.6 μm is selected in step 6), and the quantum dot layer is prepared by standing, spin coating and displacement.
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| CN111129181B (en) * | 2019-12-11 | 2021-10-22 | 上海师范大学 | Visible light to near-infrared light band-pass filtering graphene photoelectric detector |
| CN114530517A (en) * | 2020-11-23 | 2022-05-24 | 京东方科技集团股份有限公司 | Flat panel detector and medical image detection equipment |
| CN114449186B (en) * | 2021-05-10 | 2024-03-22 | 浙江大学 | Portable multi-functional binocular infrared night-time vision device of graphite alkene |
| CN115148844B (en) * | 2022-07-12 | 2024-02-06 | 西安电子科技大学 | Photoelectric detector based on double heterojunction and preparation method thereof |
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