CN110049827A - The manufacturing method of peeling layer - Google Patents
The manufacturing method of peeling layer Download PDFInfo
- Publication number
- CN110049827A CN110049827A CN201780075610.XA CN201780075610A CN110049827A CN 110049827 A CN110049827 A CN 110049827A CN 201780075610 A CN201780075610 A CN 201780075610A CN 110049827 A CN110049827 A CN 110049827A
- Authority
- CN
- China
- Prior art keywords
- peeling layer
- manufacturing
- resin substrate
- polyamic acid
- tetracarboxylic dianhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000011159 matrix material Substances 0.000 claims abstract description 43
- 239000000203 mixture Substances 0.000 claims abstract description 41
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 41
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 89
- 239000011347 resin Substances 0.000 claims description 63
- 229920005989 resin Polymers 0.000 claims description 63
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 49
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 21
- 125000003118 aryl group Chemical group 0.000 claims description 16
- -1 aromatic diamine Diamine Chemical class 0.000 claims description 15
- 150000004984 aromatic diamines Chemical class 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 8
- 150000001555 benzenes Chemical class 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 46
- 239000011521 glass Substances 0.000 description 32
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 23
- 238000003786 synthesis reaction Methods 0.000 description 23
- 150000004985 diamines Chemical class 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 16
- 230000006978 adaptation Effects 0.000 description 15
- 239000002904 solvent Substances 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 229940018564 m-phenylenediamine Drugs 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical class NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N n-propyl alcohol Natural products CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- QCILMAMLEHOLRX-UHFFFAOYSA-N 2-(3-aminophenyl)-3h-benzimidazol-5-amine Chemical compound NC1=CC=CC(C=2NC3=CC(N)=CC=C3N=2)=C1 QCILMAMLEHOLRX-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- ACDVZOCROFAUCK-UHFFFAOYSA-N 3-[2-(3-aminophenyl)phenyl]aniline Chemical compound NC1=CC=CC(C=2C(=CC=CC=2)C=2C=C(N)C=CC=2)=C1 ACDVZOCROFAUCK-UHFFFAOYSA-N 0.000 description 2
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IOSOEOCUMAIZRA-UHFFFAOYSA-N 4-[2-(4-aminophenyl)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=CC=C1C1=CC=C(N)C=C1 IOSOEOCUMAIZRA-UHFFFAOYSA-N 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 2
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- GETTZEONDQJALK-UHFFFAOYSA-N (trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1 GETTZEONDQJALK-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- XJKSTNDFUHDPQJ-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 XJKSTNDFUHDPQJ-UHFFFAOYSA-N 0.000 description 1
- YFOOEYJGMMJJLS-UHFFFAOYSA-N 1,8-diaminonaphthalene Chemical compound C1=CC(N)=C2C(N)=CC=CC2=C1 YFOOEYJGMMJJLS-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 1
- WQOWBWVMZPPPGX-UHFFFAOYSA-N 2,6-diaminoanthracene-9,10-dione Chemical compound NC1=CC=C2C(=O)C3=CC(N)=CC=C3C(=O)C2=C1 WQOWBWVMZPPPGX-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- UMGYJGHIMRFYSP-UHFFFAOYSA-N 2-(4-aminophenyl)-1,3-benzoxazol-5-amine Chemical class C1=CC(N)=CC=C1C1=NC2=CC(N)=CC=C2O1 UMGYJGHIMRFYSP-UHFFFAOYSA-N 0.000 description 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- PPPFYBPQAPISCT-UHFFFAOYSA-N 2-hydroxypropyl acetate Chemical compound CC(O)COC(C)=O PPPFYBPQAPISCT-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical compound C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical class C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- GFYIDKJYBLCSIH-UHFFFAOYSA-N 3,4-bis(trifluoromethyl)benzene-1,2-diamine Chemical class NC1=CC=C(C(F)(F)F)C(C(F)(F)F)=C1N GFYIDKJYBLCSIH-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical group NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- GMNVMGZRYCFBBV-UHFFFAOYSA-N 3-butan-2-yloxy-n,n-dimethylpropanamide Chemical compound CCC(C)OCCC(=O)N(C)C GMNVMGZRYCFBBV-UHFFFAOYSA-N 0.000 description 1
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 description 1
- CRORGGSWAKIXSA-UHFFFAOYSA-N 3-methylbutyl 2-hydroxypropanoate Chemical compound CC(C)CCOC(=O)C(C)O CRORGGSWAKIXSA-UHFFFAOYSA-N 0.000 description 1
- IPWGAPCYYMTTLT-UHFFFAOYSA-N 3-propylaniline Chemical compound CCCC1=CC=CC(N)=C1 IPWGAPCYYMTTLT-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- BOVVHULZWVFIOX-UHFFFAOYSA-N 4-[3-(4-aminophenyl)phenyl]aniline Chemical group C1=CC(N)=CC=C1C1=CC=CC(C=2C=CC(N)=CC=2)=C1 BOVVHULZWVFIOX-UHFFFAOYSA-N 0.000 description 1
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical group C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 1
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical class FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical class C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- KZSXRDLXTFEHJM-UHFFFAOYSA-N 5-(trifluoromethyl)benzene-1,3-diamine Chemical class NC1=CC(N)=CC(C(F)(F)F)=C1 KZSXRDLXTFEHJM-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- DOVIDLOCJKRZAB-UHFFFAOYSA-N C1(=CC=C(N)C=C1)C1=CC=C(N)C=C1.[F] Chemical class C1(=CC=C(N)C=C1)C1=CC=C(N)C=C1.[F] DOVIDLOCJKRZAB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- JJHHIJFTHRNPIK-UHFFFAOYSA-N Diphenyl sulfoxide Chemical compound C=1C=CC=CC=1S(=O)C1=CC=CC=C1 JJHHIJFTHRNPIK-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- RSHYBLDYLNAJJV-UHFFFAOYSA-N anthracene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=CC3=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C3C=C21 RSHYBLDYLNAJJV-UHFFFAOYSA-N 0.000 description 1
- BALIDSJNGIOVDT-UHFFFAOYSA-N anthracene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=CC3=C(C(O)=O)C(C(=O)O)=CC=C3C=C21 BALIDSJNGIOVDT-UHFFFAOYSA-N 0.000 description 1
- IXXJLTBOJARXQZ-UHFFFAOYSA-N anthracene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=CC3=C(C(O)=O)C(C(=O)O)=CC=C3C=C21 IXXJLTBOJARXQZ-UHFFFAOYSA-N 0.000 description 1
- NWHVETQKRUAVNP-UHFFFAOYSA-N anthracene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C(C(O)=O)C2=CC3=C(C(O)=O)C(C(=O)O)=CC=C3C=C21 NWHVETQKRUAVNP-UHFFFAOYSA-N 0.000 description 1
- MRSWDOKCESOYBI-UHFFFAOYSA-N anthracene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC2=C1 MRSWDOKCESOYBI-UHFFFAOYSA-N 0.000 description 1
- NDMVXIYCFFFPLE-UHFFFAOYSA-N anthracene-9,10-diamine Chemical compound C1=CC=C2C(N)=C(C=CC=C3)C3=C(N)C2=C1 NDMVXIYCFFFPLE-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XAHAOEIIQYSRHJ-UHFFFAOYSA-N benzene-1,2-diamine Chemical compound NC1=CC=CC=C1N.NC1=CC=CC=C1N XAHAOEIIQYSRHJ-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- DMVOXQPQNTYEKQ-UHFFFAOYSA-N biphenyl-4-amine Chemical class C1=CC(N)=CC=C1C1=CC=CC=C1 DMVOXQPQNTYEKQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 229940035423 ethyl ether Drugs 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- VQAXAEVAHOSPMQ-UHFFFAOYSA-N n,n-dimethyl-3-[(2-methylpropan-2-yl)oxy]propanamide Chemical compound CN(C)C(=O)CCOC(C)(C)C VQAXAEVAHOSPMQ-UHFFFAOYSA-N 0.000 description 1
- ZIJQOYKHWORKOW-UHFFFAOYSA-N n,n-dimethyl-3-propan-2-yloxypropanamide Chemical compound CC(C)OCCC(=O)N(C)C ZIJQOYKHWORKOW-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- NTNWKDHZTDQSST-UHFFFAOYSA-N naphthalene-1,2-diamine Chemical compound C1=CC=CC2=C(N)C(N)=CC=C21 NTNWKDHZTDQSST-UHFFFAOYSA-N 0.000 description 1
- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- XTBLDMQMUSHDEN-UHFFFAOYSA-N naphthalene-2,3-diamine Chemical compound C1=CC=C2C=C(N)C(N)=CC2=C1 XTBLDMQMUSHDEN-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IEOHNKVNXFRYRZ-UHFFFAOYSA-N phenanthrene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=C2C3=C(C(O)=O)C(C(O)=O)=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 IEOHNKVNXFRYRZ-UHFFFAOYSA-N 0.000 description 1
- WMPIWNDQTXFDML-UHFFFAOYSA-N phenanthrene-1,2,5,6-tetracarboxylic acid Chemical compound C=1(C(=CC=C2C3=C(C(=CC=C3C=CC=12)C(=O)O)C(=O)O)C(=O)O)C(=O)O WMPIWNDQTXFDML-UHFFFAOYSA-N 0.000 description 1
- CYPCCLLEICQOCV-UHFFFAOYSA-N phenanthrene-1,2,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 CYPCCLLEICQOCV-UHFFFAOYSA-N 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- DSCGEATYFSJFFN-UHFFFAOYSA-N phenanthrene-1,8-diamine Chemical compound C1=CC2=C(N)C=CC=C2C2=C1C(N)=CC=C2 DSCGEATYFSJFFN-UHFFFAOYSA-N 0.000 description 1
- QSQKZQDVHIPIHC-UHFFFAOYSA-N phenanthrene-2,3,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=CC=C21 QSQKZQDVHIPIHC-UHFFFAOYSA-N 0.000 description 1
- WBTDNYIDKJTWHC-UHFFFAOYSA-N phenanthrene-2,3,9,10-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C=C(C(C(=O)O)=C3)C(O)=O)C3=C(C(O)=O)C(C(O)=O)=C21 WBTDNYIDKJTWHC-UHFFFAOYSA-N 0.000 description 1
- QJZDTUSIYGXUJR-UHFFFAOYSA-N phenanthrene-2,7-diamine Chemical compound NC1=CC=C2C3=CC=C(N)C=C3C=CC2=C1 QJZDTUSIYGXUJR-UHFFFAOYSA-N 0.000 description 1
- YKACKJKMVKATQX-UHFFFAOYSA-N phenanthrene-3,4,5,6-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=C2C3=C(C(O)=O)C(C(=O)O)=CC=C3C=CC2=C1 YKACKJKMVKATQX-UHFFFAOYSA-N 0.000 description 1
- LJUVBDJNJVYNNW-UHFFFAOYSA-N phenanthrene-3,6-diamine Chemical compound C1=C(N)C=C2C3=CC(N)=CC=C3C=CC2=C1 LJUVBDJNJVYNNW-UHFFFAOYSA-N 0.000 description 1
- VPRFQZSTJXHBHL-UHFFFAOYSA-N phenanthrene-9,10-diamine Chemical compound C1=CC=C2C(N)=C(N)C3=CC=CC=C3C2=C1 VPRFQZSTJXHBHL-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Medicinal Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electroluminescent Light Sources (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
The manufacturing method of present invention offer peeling layer, it includes following process: peeling layer formation being coated on matrix with composition, is burnt at 400 DEG C of maximum temperature or more, the peeling layer formation includes with composition: there are any one of two ends from tetrabasic carboxylic acid, two end or both to use the closed polyamic acid of Ortho-Aminophenol；And organic solvent.
Description
Technical field
The present invention relates to the manufacturing methods of peeling layer.
Background technique
In recent years, for electronic device, other than needing to be thinned with characteristic as lighting, it is also necessary to assign energy
It is enough to be bent such function.Be thus taken into account, it is desirable that substitute previous weight, fragility, unyielding glass substrate and using lightweight
Flexible plastic substrates.
Particularly, for display of new generation, it is desirable that using the flexible plastic substrates for having lightweight, (following table is remembered for exploitation
For resin substrate) the panchromatic TFT display panel of active array type.For technology related with a new generation's display,
Expect to convert into various fields such as flexible display, flexible intelligent phone, mirror displays.
Therefore, begin one's study the manufacturing methods of the various electronic devices using resin film as substrate, and a new generation is shown
For device, carry out can convert existing TFT display panel manufacture equipment technique research.
For example, disclosing following method in patent document 1,2 and 3: forming amorphous si film on the glass substrate
Layer, in the film layer formed plastic base after, from glass substrate side irradiate laser and crystallize amorphous silicon, using with this
The hydrogen that crystallization generates together removes plastic base from glass substrate.
In addition, disclosing following method in patent document 4: will be shelled using technology disclosed in Patent Documents 1 to 3
Absciss layer (" being transferred layer " is recorded as in patent document 4) is pasted on plastic foil, completes liquid crystal display device.
But in method disclosed in Patent Documents 1 to 4, particularly method disclosed in Patent Document 4, exist as
Lower problem: in order to make laser light, it is necessary to use the high substrate of translucency；It needs to be enough to make it through substrate and then makes without fixed
The irradiation of the laser for the bigger energy that hydrogen contained in shape silicon is released；Due to the irradiation of laser, stripped layer is made sometimes
At damage.
Also, in the case where stripped layer is large area, laser treatment needs for a long time, and therefore, it is difficult to improve device system
The productivity of work.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 10-125929 bulletin
Patent document 2: Japanese Unexamined Patent Publication 10-125931 bulletin
Patent document 3: International Publication No. 2005/050754
Patent document 4: Japanese Unexamined Patent Publication 10-125930 bulletin
Summary of the invention
Subject to be solved by the invention
The present invention is completed in view of above-mentioned actual conditions, and it is an object of the present invention to provide being capable of not resin base to flexible electronic device
The manufacturing method for the peeling layer that plate is removed with causing damage.
Means for solving the problems
The present inventor conscientiously studies repeatedly in order to solve the above problems, as a result, it has been found that: use appointing comprising tetrabasic carboxylic acid end
The closed polyamic acid of one or both Ortho-Aminophenol and organic solvent composition, firing temperature when forming peeling layer
Degree is defined maximum temperature reached or more, thus, it is possible to formed have excellent adaptation with matrix and with flexible electronic device
The peeling layer of the fissility of the adaptation and appropriateness of the appropriateness of resin substrate used in part, completes the present invention.
That is, the present invention provides:
1. the manufacturing method of peeling layer, which is characterized in that include following process: peeling layer formation is coated on composition
It is burnt into, the peeling layer formation includes with composition: being had from tetrabasic carboxylic acid on matrix, at 400 DEG C of maximum temperature or more
Two ends, any one of two end or both the closed polyamic acid of Ortho-Aminophenol and organic solvent；
2. the manufacturing method of 1 peeling layer, wherein above-mentioned polyamic acid is to make the diamine component comprising aromatic diamine
Polyamic acid obtained from being reacted with the acid dianhydride component comprising aromatic tetracarboxylic dianhydride；
3. the manufacturing method of 2 peeling layer, wherein above-mentioned aromatic diamine is the aromatic series two containing 1~5 benzene nucleus
Amine；
The manufacturing method of 4.2 or 3 peeling layer, wherein above-mentioned aromatic tetracarboxylic dianhydride is containing 1~5 benzene nucleus
Aromatic tetracarboxylic dianhydride；
5. the manufacturing method for having the flexible electronic device of resin substrate, which is characterized in that use peeling layer, the removing
Layer for using any one of 1~4 manufacturing method and formed；
6. a kind of manufacturing method of flexible electronic device, it includes following process: in the manufacture using any one of 1~4
Method be formed by peeling layer be coated with resin substrate formation composition after, be burnt at 450 DEG C of maximum temperature or more and
Form resin substrate；
7. the manufacturing method of 5 or 6 flexible electronic device, wherein the resin substrate is polyimide resin substrate.
The effect of invention
By using the manufacturing method of peeling layer of the invention, obtain having and matrix well so as to reproducibility
Excellent adaptation and the peeling layer with the fissility of the adaptation of the appropriateness of resin substrate and appropriateness.Therefore, pass through implementation
The manufacturing method of the present invention, in the manufacturing process of flexible electronic device, will not to the resin substrate formed on matrix, in turn
The circuit etc. being arranged on it causes to damage, and the resin substrate is separated into possibility from the matrix together with the circuit etc..Cause
This, the manufacturing method of the present invention can help to the easy of the manufacturing process for the flexible electronic device for having resin substrate, its receipts
Rate raising etc..
Specific embodiment
Hereinafter, the present invention is described in more detail.
The manufacturing method of peeling layer of the present invention, which is characterized in that include following process: by peeling layer formation group
It closes object to be coated on matrix, be burnt at 400 DEG C of maximum temperature or more, the peeling layer formation includes with composition: having
Any one of two ends, two end from tetrabasic carboxylic acid or both closed polyamic acid of Ortho-Aminophenol；With it is organic
Solvent.
Wherein, the peeling layer in the so-called present invention, is the layer being arranged right above glass matrix according to the purpose of regulation, makees
For its typical case, can enumerate in the manufacturing process of flexible electronic device, in matrix and the resin system as polyimides
At flexible electronic device resin substrate between in order to which the resin substrate is fixed and be arranged and at this in defined technique
It is rear in order to enable the resin substrate can be from the stripping that the matrix is easily peeled off and is arranged that electronic circuit etc. is formed on resin substrate
Absciss layer.
It, can be by making the polyamide with two ends from tetrabasic carboxylic acid for the polyamic acid used in the present invention
Any one of polymer chain terminal of acid or both is reacted with the amino of Ortho-Aminophenol and is closed to obtain.That is,
This obtained polyamic acid is closed any one of molecule chain end or both with the phenyl containing hydroxyl.
There is hydroxyl by polymer ends, the difference of flexible base board used in upper layer and skeleton can be generated, because
This raising it is possible to realize obtained film as the function of peeling layer.
In the present invention, as long as there is the hydroxyl from Ortho-Aminophenol in any one of polymer chain terminal of polyamic acid
Base, but there is the hydroxyl from Ortho-Aminophenol in the two preferably in polymer chain terminal.
In addition, used diamine component and acid dianhydride component when as manufacture polyamic acid, from the work of the film made
From the viewpoint of the function raising of peeling layer, preferably make the diamine component comprising aromatic diamine and comprising aromatic tetracarboxylic acid
Polyamic acid obtained from the acid dianhydride component reaction of dianhydride.
As aromatic diamine, as long as with 2 amino and there is aromatic rings in the molecule, it is not particularly limited, it is excellent
Select the aromatic diamine containing 1~5 benzene nucleus.
As its concrete example, can enumerate Isosorbide-5-Nitrae-diaminobenzene (p-phenylenediamine), 1,3- diaminobenzene (m-phenylene diamine (MPD)),
1,2- diaminobenzene (o-phenylenediamine), 2,4 di amino toluene, 2,5- diaminotoluene, 2,6- diaminotoluene, 4,6- diformazan
Base m-phenylene diamine (MPD), 2,5- dimethyl-p-phenylenediamine, 2,6- dimethyl-p-phenylenediamine, 2,4,6- trimethyl -1,3- phenylenediamine, 2,3,
5,6- tetramethyl-para-phenylene diamine, m-xylene diamine, p dimethylamine, 5- trifluoromethylbenzene -1,3- diamines, 5- trifluoromethylbenzene -
The diamines that the benzene nucleus such as bis- (trifluoromethyl) benzene -1,2- diamines of 1,2- diamines, 3,5- are 1；1,2- naphthylenediamine, 1,3- naphthylenediamine,
1,4- naphthylenediamine, 1,5- naphthylenediamine, 1,6- naphthylenediamine, 1,7- naphthylenediamine, 1,8- naphthylenediamine, 2,3- naphthylenediamine, 2,6- naphthylenediamine,
4,4 '-benzidines, 2,2 '-bis- (trifluoromethyl) -4,4 '-benzidines, 3,3 '-dimethyl -4,4 '-diamino-diphenyl
Methane, 3,3 '-dicarboxyls -4,4 '-diaminodiphenyl-methane, 3,3 ', 5,5 '-tetramethyls -4,4 '-diamino-diphenyl first
Alkane, 4,4 '-diamino-Ns-benzanilide, 3,3 '-dichloro-benzidine, 3,3 '-dimethylbenzidines, 2,2 '-dimethyl diphenyls
Amine, 3,3 '-diaminodiphenyl-methanes, 3,4 '-diaminodiphenyl-methanes, 4,4 '-diaminodiphenyl-methanes, 2,2- are bis-
Bis- (4- aminophenyl) propane of (3- aminophenyl) propane, 2,2-, bis- (3- the aminophenyl) -1,1,1,3,3,3- hexafluoros third of 2,2-
Bis- (4- the aminophenyl) -1,1,1,3,3,3- hexafluoropropane of alkane, 2,2-, 3,3 '-diaminodiphenyl sulfoxides, 3,4 '-diamino
Diphenyl sulfoxide, 4,4 '-diaminodiphenyl sulfoxides, 3,3 '-bis- (trifluoromethyl) biphenyl -4,4 '-diamines, 3,3 ', 5,5 '-four
Fluorine biphenyl -4,4 '-diamines, 4,4 '-diamino octafluorobiphenyls, 2- (3- aminophenyl) -5- aminobenzimidazole, 2- (4- amino
Phenyl) benzene nucleus such as -5- amino benzoxazoles be 2 diamines；1,5- diaminoanthraquinone-, 2,6- diaminoanthraquinone-, 9,10- diamino
Anthracene, 1,8- diamino phenanthrene, 2,7- diamino phenanthrene, 3,6- diamino phenanthrene, 9,10- diamino phenanthrene, bis- (3- aminophenyl) benzene of 1,3-,
Bis- (4- aminophenyl) benzene of 1,3-, bis- (3- aminophenyl) benzene of 1,4-, bis- (4- aminophenyl) benzene of 1,4-, bis- (the 3- amino of 1,3-
Aralkyl sulfid) benzene, bis- (4- aminophenyl-thioether) benzene of 1,3-, bis- (4- aminophenyl-thioether) benzene of 1,4-, bis- (the 3- aminobenzenes of 1,3-
Base sulfone) bis- [2- (4- aminophenyl) is different by benzene, bis- (the 4- aminophenyl sulfone) benzene of 1,3-, bis- (the 4- aminophenyl sulfone) benzene of 1,4-, 1,3-
Propyl] benzene, bis- [2- (3- aminophenyl) isopropyl] benzene of 1,4-, 1,4- bis- [2- (4- aminophenyl) isopropyl] benzene, 4,4 "-two
The benzene nucleus such as the p- terphenyl of amino-, 4,4 "-diamino-m- terphenyl are 3 diamines etc., but are not limited to these.These
It can be used alone, two or more can be also applied in combination.It should be noted that in the present invention, above-mentioned aromatic diamine is preferred
Use the aromatic diamine of not ether-containing key and ester bond.
Wherein, from the viewpoint of being improved as the function of peeling layer from the film that makes, preferably aromatic rings and and its
Do not have the aromatic diamine of the substituent groups such as methyl being only made of aromatic ring and heteroaromatic ring on condensed heterocycle.Specifically
Ground, preferably p-phenylenediamine, m-phenylene diamine (MPD), 2- (3- aminophenyl) -5- aminobenzimidazole, 2- (4- aminophenyl) -5- amino
Benzoxazoles, 4,4 "-diamino-p- terphenyl etc..
As aromatic tetracarboxylic dianhydride, as long as with 2 dicarboxylic anhydride positions and there is aromatic rings in the molecule,
It is not particularly limited, preferably comprises the aromatic tetracarboxylic dianhydride of 1~5 benzene nucleus.
As its concrete example, pyromellitic acid anhydride, benzene -1,2 can be enumerated, 3,4- tetracarboxylic dianhydrides, naphthalene -1,2,3,
4- tetracarboxylic dianhydride, naphthalene -1,2,5,6- tetracarboxylic dianhydride, naphthalene -1,2,6,7- tetracarboxylic dianhydride, naphthalene -1,2,7,8- tetrabasic carboxylic acid two
Acid anhydride, naphthalene -2,3,5,6- tetracarboxylic dianhydride, naphthalene -2,3,6,7- tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic acid dianhydride, biphenyl -2,
2', 3,3'- tetracarboxylic dianhydride, biphenyl -2,3,3', 4'- tetracarboxylic dianhydride, biphenyl -3,3', 4,4'- tetracarboxylic dianhydride, anthracene -1,
2,3,4- tetracarboxylic dianhydride, anthracene -1,2,5,6- tetracarboxylic dianhydride, anthracene -1,2,6,7- tetracarboxylic dianhydride, anthracene -1,2,7,8- tetracarboxylic acid
Acid dianhydride, anthracene -2,3,6,7- tetracarboxylic dianhydride, phenanthrene -1,2,3,4- tetracarboxylic dianhydride, phenanthrene -1,2,5,6- tetracarboxylic dianhydride, phenanthrene -
1,2,6,7- tetracarboxylic dianhydride, phenanthrene -1,2,7,8- tetracarboxylic dianhydride, phenanthrene -1,2,9,10- tetracarboxylic dianhydride, phenanthrene -2,3,5,6- four
Carboxylic acid dianhydride, phenanthrene -2,3,6,7- tetracarboxylic dianhydride, phenanthrene -2,3,9,10- tetracarboxylic dianhydride, phenanthrene -3,4,5,6- tetracarboxylic dianhydride,
Phenanthrene -3,4,9,10- tetracarboxylic dianhydrides etc., but it is not limited to these.These can be used alone, also can be by two or more
It is applied in combination.
Wherein, from the viewpoint of the function raising from the film made as peeling layer, preferably benzene nucleus is 1 or 2
Aromatic carboxylic acid dianhydride.And specifically, it is preferable to the aromatic tetracarboxylic dianhydride indicated by any one of formula (C1)~(C12), more
It is preferred that the aromatic tetracarboxylic dianhydride indicated by any one of formula (C1)~(C7) and (C9)~(C11).
[changing 1]
In addition, from the viewpoint of improving obtained flexibility, heat resistance of peeling layer etc., diamines used in the present invention
For ingredient containing the diamines other than aromatic diamine, tetracarboxylic dianhydride's ingredient used in the present invention can contain aromatic tetracarboxylic acid
Tetracarboxylic dianhydride other than dianhydride.
In the present invention, the amount of the aromatic diamine in diamine component is preferably 70 moles of % or more, and more preferably 80 rub
You are % or more, and further preferably 90 moles of % or more still more preferably rub for 95 moles of % or more, most preferably 100
You are %.In addition, the amount of the aromatic tetracarboxylic dianhydride in tetracarboxylic acid sour component is preferably 70 moles of % or more, more preferably 80 rub
You are % or more, and further preferably 90 moles of % or more still more preferably rub for 95 moles of % or more, most preferably 100
You are %.By using such usage amount, can reproducibility obtain well with matrix excellent adaptation and with tree
The film of the fissility of the adaptation and appropriateness of the appropriateness of aliphatic radical plate.
After reacting diamine component described above with tetracarboxylic dianhydride's ingredient, the polyamic acid and 2- aminobenzene that make
Phenol reaction, thus, it is possible to obtain its polymer chain terminal 2- aminobenzene contained in peeling layer formation composition of the invention
The polyamic acid of phenol block.
For the charge ratio of diamine component and tetracarboxylic dianhydride's ingredient, target molecular weight, molecular weight distribution, diamines are considered
Type, the type of tetracarboxylic dianhydride etc. suitably determine, therefore cannot entirely provide, in order to be formed as from tetrabasic carboxylic acid
Two end of strand preferably makes the molal quantity of tetracarboxylic dianhydride's ingredient more relative to the molal quantity of diamine component.As specific
Molar ratio, relative to 1 mole of diamine component, preferably 1.02~3.0 moles of tetracarboxylic dianhydride's ingredient, more preferable 1.07~2.5 rub
You, further preferred 1.1~2.0 moles.
Just the synthesis of polyamic acid and synthesis polyamic acid molecule chain end closing used in organic solvent
For, as long as not generating adverse effect to reaction, it is not particularly limited, as its concrete example, metacresol, 2- pyrrole can be enumerated
Pyrrolidone, n-methyl-2-pyrrolidone, N- ethyl-2-pyrrolidone, n-vinyl-2-pyrrolidone, N, N- dimethylacetamide
Amine, N,N-dimethylformamide, 3- methoxyl group-N, N- dimethylpropionamide, 3- ethyoxyl-N, N- dimethylpropionamide, 3- third
Oxygroup-N, N- dimethylpropionamide, 3- isopropoxy-N, N- dimethylpropionamide, 3- butoxy-N, N- dimethylpropionamide,
3- sec- butoxy-N, N- dimethylpropionamide, 3- t-butoxy-N, N- dimethylpropionamide, gamma-butyrolacton etc..It is said
It is bright, organic solvent can a kind be used alone or two or more be applied in combination.
Particularly, for the organic solvent for reaction, from dissolution diamines and tetracarboxylic dianhydride and polyamides well
Amino acid considers, is preferably selected from amides, the amide by (S2) amides indicated and being indicated by formula (S3) indicated by formula (S1)
At least one of class.
[changing 2]
In formula, R1And R2The alkyl of carbon atom number 1~10 is indicated independently of each other.R3Indicate hydrogen atom or carbon atom number 1~
10 alkyl.H indicates natural number, preferably 1~3, more preferably 1 or 2.
As the alkyl of carbon atom number 1~10, methyl, ethyl, n-propyl, isopropyl, normal-butyl, isobutyl can be enumerated
Base, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, positive decyl etc..In these, preferably carbon is former
The alkyl of subnumber 1~3, the alkyl of more preferable carbon atom number 1 or 2.
For reaction temperature when the synthesis of polyamic acid, it can be fitted in range of the fusing point to boiling point of the solvent used
Locality setting, maintains polyamides from the imidizate of the polyamic acid prevented in the solution by usually 0~100 DEG C or so
From the viewpoint of the high-content of amino acid unit, it can be preferably set to 0~70 DEG C or so, be more preferably set as 0~60 DEG C or so,
Further preferably it is set as 0~50 DEG C or so.For the reaction time, due to depending on the reaction of reaction temperature, raw material
Property, therefore cannot entirely provide, but usually 1~100 hour or so.
It is same when with the synthesis of polyamic acid for reaction temperature when closing the molecule chain end of polyamic acid,
It can suitably be set in range of the fusing point to boiling point of the solvent used, usually 0~100 DEG C or so, from will reliably close
At polyamic acid molecule chain end closing from the viewpoint of, 0~70 DEG C or so can be preferably set to, be more preferably set as
0~60 DEG C or so, further preferably it is set as 0~50 DEG C or so.For the reaction time, due to depending on reaction temperature, original
The reactivity of material matter, therefore cannot entirely provide, but usually 1~100 hour or so.
It is obtaining like this, molecule chain end that either or both is equal with the weight of the closed polyamic acid of Ortho-Aminophenol
For molecular weight, usually 5,000~500,000 or so, the viewpoint improved from the function as peeling layer of the film made
Consider, preferably 6,000~200,000 or so, more preferably 7,000~150,000 or so.It should be noted that in the present invention, weight
Average molecular weight is to measure obtained polystyrene scaled value using gel permeation chromatography (GPC).
In the present invention, the reaction solution after endcapped usually can be directly used as to peeling layer of the invention and form use
Composition or solution obtained from being diluted or being concentrated are used as peeling layer formation composition of the invention.It is explained,
For above-mentioned reaction solution, can be filtered as needed.By being filtered, can not only reduce can become obtained removing
The impurity of the reason of deterioration of adaptation, the fissility of layer etc. is mixed into, and can be efficiently obtained peeling layer and be formed use
Composition.In addition, solvent can be dissolved in again and peeling layer is made is formed and use after solution isolates polyamic acid from the reactions above
Composition.As the solvent at this point, organic solvent used in above-mentioned reaction etc. can be enumerated.
It is not particularly limited to for diluted solvent, as its concrete example, can enumerate molten with the above-mentioned reaction reacted
The identical solvent of the concrete example of agent.For diluted solvent can a kind be used alone or two or more be applied in combination.Wherein,
Consider from fully polyamic acid is dissolved, preferably n,N-Dimethylformamide, n,N-dimethylacetamide, N- methyl -2- pyrrole
Pyrrolidone, 1,3-Dimethyl-2-imidazolidinone, N- ethyl-2-pyrrolidone, gamma-butyrolacton, more preferable N- methyl -2- pyrroles
Alkanone.
Even in addition, not making the solvent of polyamic acid dissolution in situation individually, as long as what polyamic acid was not precipitated
Range can also be mixed in peeling layer formation of the invention in composition.Particularly, can moderately make ethyl cellosolve,
Butyl cellosolve, ethyl carbitol, butyl carbitol, ethylcarbitol acetate, ethylene glycol, 1- methoxy-2-propanol, 1- second
Oxygroup -2- propyl alcohol, 1- butoxy -2- propyl alcohol, 1- phenoxy group -2- propyl alcohol, Propylene glycol monoacetate, propylene-glycol diacetate, third
Glycol -1- monomethyl ether -2- acetic acid esters, propylene glycol -1- list ethylether -2- acetic acid esters, dipropylene glycol, 2- (2- ethoxy-c oxygen
Base) propyl alcohol, methyl lactate, ethyl lactate, lactic acid n-propyl ester, n-butyl lactate, isoamyl lactate etc. be with low surface tension
Solvent mixes.It is known thus to be improved to film homogeneity when the coating of substrate, in peeling layer formation composition of the invention
It is also preferred that using.
For the concentration of the polyamic acid in peeling layer formation composition of the invention, the peeling layer of production is considered
Thickness, viscosity of composition etc. are suitably set, usually 1~30 mass % or so, preferably 1~20 mass % or so.It is logical
Crossing makes its such concentration, can reproducibility obtain well 0.05~5 μm or so thickness peeling layer.With regard to polyamic acid
Concentration for, can by adjusting the raw material as polyamic acid diamines and tetracarboxylic dianhydride usage amount, will be above-mentioned anti-
Its filtrate is diluted after answering solution to filter or is concentrated, the polyamic acid of isolation is made to adjust its amount etc. when dissolving in a solvent to carry out
Adjustment.
For the viscosity of peeling layer formation composition of the invention, thickness of peeling layer of production etc. is considered suitably
Setting, for the purpose of especially obtaining the film of 0.05~5 μm or so of thickness well by reproducibility in the case where, in general, 25 DEG C
It is down 10~10,000mPas or so, preferably 20~5,000mPas or so.
Wherein, for viscosity, it is able to use the viscosimetric analysis viscosimeter of commercially available liquid, for example, referring to JIS
The step of recording in K7117-2 is measured under conditions of 25 DEG C of temperature of composition.Preferably as viscosimeter, use
Cone-plate type (cone-plate type) rotational viscometer, it is preferable that use 1 ° of 34 ' × R24 as standard cone in the viscosimeter of homotype
Shape rotor can be measured under conditions of 25 DEG C of temperature of composition.As such rotational viscometer, such as can enumerate
East machine industry (strain) TVE-25L processed out.
It is explained, for peeling layer of the invention is formed with composition, other than polyamic acid and organic solvent,
It such as may include crosslinking agent etc. to improve film-strength.
After peeling layer formation described above is coated on matrix with composition, using included in 400 DEG C of maximum temperature
Polyamic acid is carried out hot-imide by the sintering method for the process being burnt into above, and thus, it is possible to obtain having and matrix
Excellent adaptation and with the adaptation of the appropriateness of resin substrate and appropriate fissility, the stripping that is made of polyimide film
Absciss layer.
In the present invention, if maximum temperature when above-mentioned firing be 400 DEG C or more and the heat resisting temperature of polyimides with
Under range, then be not particularly limited, if it is considered that improving the above-mentioned adaptation with matrix, appropriate close with resin substrate
Conjunction property and fissility, then preferably 450 DEG C or more, more preferable 500 DEG C or more.In addition, its upper limit is usually 550 DEG C or so, preferably
510 DEG C or so.By making heating temperature above range, while the fragilityization of the film prevented, can also fully into
Row imidization reaction.
It is different because of heating temperature for heating up the time, therefore cannot entirely provide, usually 1 minute~5 hours.
In addition, acid imide rate can be 50~100% range.
In addition, as long as maximum temperature becomes above range, may include below it for temperature when above-mentioned firing
At a temperature of the process be burnt into.
As preferred an example of the heating method in the present invention, following gimmick can be enumerated: being heated at 50~150 DEG C
Afterwards, directly periodically increase heating temperature, finally heated at 400 DEG C or more.Particularly as the more preferable of heating method
An example, following gimmick can be enumerated: being heated at 50~100 DEG C, be greater than 100 DEG C and less than 400 DEG C heat, at 400 DEG C
The above heating.In turn, as preferred another example of heating method, following gimmick can be enumerated: being heated at 50~150 DEG C
Afterwards, it is being greater than 150 DEG C and 350 DEG C or less heating, is then being greater than 350 DEG C and 450 DEG C or less heating, finally more than 450 DEG C
And 510 DEG C or less heating.
In addition, preferred an example as heating method when considering firing time, can enumerate following gimmick:
After being heated 1 minute~2 hours at 50~150 DEG C, directly periodically increase heating temperature, finally heated at 400 DEG C or more
30 minutes~4 hours.Particularly as preferred an example of heating method, it can enumerate and heat 1 point at 50~100 DEG C
Clock~2 hour, be greater than 100 DEG C and less than 400 DEG C at heat 5 minutes~2 hours, heated at 400 DEG C or more 30 minutes~4 small
When.In turn, as preferred another example of heating method, following gimmick can be enumerated: heating 1 point at 50~150 DEG C
Behind clock~2 hour, is heated 5 minutes~2 hours being greater than 150 DEG C and 350 DEG C or less, be then greater than 350 DEG C and 450 DEG C or less
Heating 30 minutes~4 hours is finally being greater than 450 DEG C and 510 DEG C or less heating 30 minutes~4 hours.
It is explained, in the case where forming peeling layer of the invention on matrix, peeling layer can be formed in the part of matrix
Surface can also be formed in all surfaces.The form that peeling layer is formed as the part of the surface in matrix has only in matrix surface
Defined range form the form of peeling layer, formed with pattern-likes such as dot pattern, line and space patterns in entire matrix surface
The form etc. of peeling layer.It is explained, in the present invention, so-called matrix, it is meant that peeling layer shape of the invention is coated on its surface
At with composition, for flexible electronic device etc. manufacture component.
As matrix (substrate), such as glass, metal (silicon wafer etc.), slabstone can be enumerated etc., particularly, from of the invention
Peeling layer, which has, considers its sufficient adaptation, preferably glass.It is explained, matrix surface can be by single material
It constitutes, can also be made of material of more than two kinds.As the form for being made of matrix surface material of more than two kinds, there is matrix surface
In certain range be made of certain material, the form that remaining surface is made of other materials；Certain material in matrix surface entirety
Material is in the form of the pattern-likes such as dot pattern, line and space pattern are present in other materials etc..
It is not particularly limited, such as can be enumerated with the method that composition is coated on matrix to by peeling layer formation of the invention
Cast coating method, spin-coating method, scraper for coating method, dip coating, rolling method, stick coating method, mouth die coating method, ink-jet method, printing out
Method (relief printing plate, intaglio plate, lithographic plate, silk-screen printing etc.) etc..
As utensil for heating, such as hot plate, baking oven can be enumerated etc..Heating atmosphere can be under air, can also
Think under non-active gas, furthermore it is possible under normal pressure, or under decompression.
For the thickness of peeling layer, usually 0.01~50 μm or so, from the viewpoint of productivity, preferably 0.05
~20 μm or so.It is explained, adjusts the thickness of the film before heating to realize desired thickness.
Peeling layer described above have the adaptation excellent with the matrix of matrix, particularly glass and with resin substrate
The adaptation of appropriateness and the fissility of appropriateness.Therefore, peeling layer of the invention can be suitable for: in the system of flexible electronic device
It makes in technique not to the resin substrate of the device with bringing damage by the resin substrate and the circuit formed on the resin substrate
Deng together from matrix stripping.
Hereinafter, being illustrated to an example of the manufacturing method for the flexible electronic device for having used peeling layer of the invention.
Using peeling layer formation composition of the invention, peeling layer is formed on glass matrix by above-mentioned method.
Coating is used to form the resin substrate formation solution of resin substrate on the peeling layer, which is burnt into, be consequently formed through
The resin substrate of glass matrix is fixed on by peeling layer of the invention.
For the firing temperature of above-mentioned film, suitably set according to type of resin etc., in the present invention, it is preferred to
Make 450 DEG C of maximum temperature the or more when firing, more preferably 480 DEG C or more, further preferably 490 DEG C or more, more into
One step is preferably 500 DEG C or more.Maximum temperature range when firing when by making resin substrate, can be further
Improve adaptation, the adaptation and fissility of the appropriateness of peeling layer and resin substrate of the peeling layer and matrix as substrate.
It in this case, may include being burnt at its temperature below as long as maximum temperature becomes above range
Process.
Preferred an example of heating method when as resin substrate production, can enumerate following gimmick: at 50~150 DEG C
After lower heating, directly periodically increase heating temperature, is finally heated at 450 DEG C or more.Particularly as heating method
Preferred an example can enumerate following gimmick: it is heated at 50~100 DEG C, is being greater than 100 DEG C and is being heated less than 400 DEG C,
450 DEG C or more are heated.In turn, as preferred another example of heating method, following gimmick can be enumerated: at 50~100 DEG C
After lower heating, be greater than 100 DEG C and 200 DEG C or less heating, then be greater than 200 DEG C and less than 300 DEG C heating, 300 DEG C with
Upper and less than 400 DEG C heating, heat at 400 DEG C or more and less than 450 DEG C, finally heat at 450~510 DEG C.
In addition, preferred an example as heating method when considering firing time, can enumerate following gimmick:
After heated 1 minute~2 hours at 50~150 DEG C, directly periodically increase heating temperature, finally adds at 450 DEG C or more
Heat 30 minutes~4 hours.Particularly as preferred an example of heating method, it can enumerate and heat 1 at 50~100 DEG C
Minute~2 hours, be greater than 100 DEG C and less than 400 DEG C at heat 5 minutes~2 hours, 450 DEG C or more heating 30 minutes~4
Hour.In turn, as preferred another example of heating method, following gimmick can be enumerated: heated at 50~100 DEG C
After 1 minute~2 hours, be greater than 100 DEG C and 200 DEG C or less heat 5 minutes~2 hours, then greater than 200 DEG C and less than
300 DEG C heat 30 minutes~4 hours, at 300 DEG C or more and less than 400 DEG C heating 30 minutes~4 hours, at 400 DEG C or more and
It heats less than 450 DEG C 30 minutes~4 hours, is finally heated 30 minutes~4 hours at 450~510 DEG C.
For resin substrate, in a manner of all covering peeling layer, formed with the area that the area than peeling layer is big
Substrate.As resin substrate, can enumerate representative made of polyimides as the resin substrate of flexible electronic device
Resin substrate can enumerate polyimide solution, polyamic acid solution as its resin solution is used to form.The resin base
The forming method of plate can be conventionally.
Then, desired circuit is formed on the resin substrate for being fixed on matrix via peeling layer of the invention, so
Afterwards, such as along peeling layer by resin substrate it cuts, removes resin substrate from peeling layer together with the circuit, by resin substrate
It is separated with matrix.At this point, a part of matrix can be cut together with peeling layer.
It is explained, in Japanese Unexamined Patent Publication 2013-147599 bulletin, report has will be so far in high-brightness LED, three-dimensional
Laser lift-off used in the manufacture of semiconductor package part etc. (LLO method) is applied to the manufacture of flexible display.Above-mentioned LLO method
It is characterized in that, the opposing face from the face for being formed with circuit etc., the light such as wave of specific wavelength is irradiated from glass matrix side
The light of long 308nm.The light irradiated penetrates glass matrix, and the polymer (polyimides) only near glass matrix absorbs
The light and evaporate (distillation).As a result, can not be to the performance for determining display, the circuit being arranged on resin substrate etc.
Selectively resin substrate is removed from glass matrix with having an impact.
For peeling layer of the invention, due to have fully absorb can using above-mentioned LLO method specific wavelength (such as
The feature of light 308nm), therefore can be used as the sacrificial layer of LLO method.Therefore, in the present invention via using composition
The peeling layer of formation, which is fixed on the resin substrate of glass matrix, forms desired circuit, then, implements LLO method to irradiate
The light of 308nm then only has the peeling layer to absorb the light and evaporate (distillation).Above-mentioned peeling layer sacrifice is (as sacrifice as a result,
Layer functions), selectively resin substrate can be removed from glass matrix.
Embodiment
The present invention is described in more detail hereinafter, enumerating embodiment, but the present invention is not limited to these embodiments.
[1] abbreviation of compound
NMP:N- methyl pyrrolidone
BCS: butyl cellosolve
P-PDA: p-phenylenediamine
2AP:2- amino-phenol
BPDA:3,3-4,4- bibenzene tetracarboxylic dianhydride
PMDA: pyromellitic acid anhydride
[2] measurement of weight average molecular weight and molecular weight distribution
For the weight average molecular weight (hereinafter abbreviated as Mw) and molecular weight distribution of polymer, it is divided by using Japan
(strain) GPC device processed (Shodex (registered trademark) column KF803L and KF805L) makes the dimethylformamide as dissolution solvent
Flow be 1ml/ minutes, measured under conditions of 50 DEG C of column temperature.It should be noted that Mw is set as polystyrene scaled value.
[3] synthesis of polymer
Pass through the following method synthesizing polyamides acid.
It should be noted that not by polymer segregation from the obtained reaction solution containing polymer, as described later, pass through by
Reaction solution dilutes to prepare resin substrate formation composition or peeling layer formation composition.
< synthesis example S1 polyamic acid (synthesis of S1) >
P-PDA3.176g (0.02937 mole) is dissolved in NMP88.2g, is added BPDA 8.624g (0.02931 mole)
Afterwards, it is reacted 24 hours.The Mw of obtained polymer is 107300, molecular weight distribution 4.6.
The synthesis > of < synthesis example L1 polyamic acid (L1)
P-PDA1.507g (0.0139 mole) is dissolved in NMP43.2g, is added PMDA3.166g (0.01452 mole)
Afterwards, it is reacted 2 hours.Then, 2AP0.127g (0.0012 mole) further is added, in nitrogen
React it 24 hours.The Mw of obtained polymer is 48500, molecular weight distribution 2.05.
The synthesis > of < synthesis example L2 polyamic acid (L2)
P-PDA1.119g (0.01103 mole) is dissolved in NMP35.2g, is added PMDA3.006g (0.01378 mole)
Afterwards, it is reacted 2 hours.Then, 2AP0.602g (0.00551 mole) further is added, in nitrogen
React it 24 hours.The Mw of obtained polymer is 11700, molecular weight distribution 1.76.
The synthesis > of < synthesis example L3 polyamic acid (L3)
P-PDA0.681g (0.00629 mole) is dissolved in NMP35.2g, is added PMDA2.746g (0.01259 mole)
Afterwards, it is reacted 2 hours.Then, 2AP1.373g (0.012588 mole) further is added, in nitrogen
React it 24 hours.The Mw of obtained polymer is 8000, molecular weight distribution 1.57.
< compares the synthesis > of synthesis example HL1 polyamic acid (HL1)
P-PDA1.29g (0.00107 mole) is dissolved in NMP43.2g, is added BPDA3.509g (0.00119 mole)
Afterwards, it is reacted 24 hours.The Mw of obtained polymer is 34000, molecular weight distribution 2.03.
< compares the synthesis > of synthesis example HL2 polyamic acid (HL2)
P-PDA1.325g (0.00123 mole) is dissolved in NMP36g, after addition PMDA2.674g (0.00123 mole),
Under nitrogen atmosphere, it is reacted 2 hours.Unfortunately, due to carry out gelation, therefore cannot use.
[4] resin substrate forms the preparation for using composition
Reaction solution obtained in synthesis example S1 is directly used as resin substrate formation composition respectively.
[5] peeling layer forms the preparation for using composition
[embodiment 1-1]
BCS and NMP is added in the reaction solution obtained in synthesis example L1, is diluted so that polymer concentration becomes
5wt%, BCS become 20 mass %, obtain peeling layer formation composition.
[embodiment 1-2~1-3]
In addition to replace reaction solution obtained in synthesis example L1 and respectively using reaction solution obtained in synthesis example L2~L3 with
Outside, peeling layer formation composition is obtained using method same as embodiment 1-1.
[comparative example 1-1]
In addition to replace synthesis example L1 obtained in reaction solution and respectively using compare reaction solution obtained in synthesis example HL1 with
Outside, peeling layer formation composition is obtained using method same as embodiment 1-1.
[6] production of peeling layer and resin substrate
[embodiment 2-1]
Using spinner (condition: revolution 3000rpm, about 30 seconds) by peeling layer formation group obtained in embodiment 1-1
Object L1 is closed to be coated on 100mm × 100mm glass substrate (similarly hereinafter) as glass matrix.
Then, obtained film is heated 2 minutes at 100 DEG C using hot plate, then, using baking oven, is added at 300 DEG C
Heat 30 minutes heats 30 minutes at 400 DEG C by heating temperature heating (10 DEG C/min) to 400 DEG C, and then heat up (10 DEG C/
Minute) to 500 DEG C, it is heated at 500 DEG C 10 minutes, forms thick about 0.1 μm of peeling layer on the glass substrate, obtain with stripping
The glass substrate of absciss layer.Be explained, during heating, not by with film substrate from taken out in baking oven but in baking oven
Heating.
It is coated on the peeling layer (resin film) on glass substrate obtained above using rod coaters (gap: 250 μm)
Resin substrate, which is formed, uses composition S2.Then, obtained film is heated 30 minutes at 80 DEG C using hot plate, then, is used
Baking oven after being formed as nitrogen atmosphere, heats 30 minutes at 140 DEG C, by heating temperature heating (2 DEG C/min, similarly hereinafter) to 210 DEG C,
It is heated 30 minutes at 210 DEG C, heating temperature is warming up to 300 DEG C, heated 30 minutes at 300 DEG C, heating temperature is heated up
It to 400 DEG C, is heated 30 minutes at 400 DEG C, heating temperature is warming up to 500 DEG C, heated 60 minutes, removing at 500 DEG C
Thick about 20 μm of polyimide resin substrate is formed on layer, obtains the glass substrate with resin substrate peeling layer.It is heating up
Period does not heat the substrate with film from taking out in baking oven in baking oven.
[embodiment 2-2~2-3]
In addition to replace peeling layer formation obtained in embodiment 1-1 used respectively with composition L1 embodiment 1-2~
Peeling layer obtained in 1-3 is formed with other than composition L2 and L3, using method same as embodiment 2-1 formed peeling layer and
Polyimide resin substrate obtains the glass substrate with peeling layer and the glass substrate with resin substrate peeling layer.
[comparative example 2-1]
In addition to replacing peeling layer formation obtained in embodiment 1-1 to be used obtained in comparative example 1-1 with composition L1
Peeling layer is formed with other than composition HL1, forms peeling layer and polyimide resin base using method same as embodiment 2-1
Plate obtains the glass substrate with peeling layer and the glass substrate with resin substrate peeling layer.
[7] evaluation of fissility
For having the glass substrate of peeling layer obtained in above-described embodiment 2-1~2-3 and comparative example 2-1, under
State the fissility of gimmick confirmation peeling layer and glass substrate.It should be noted that following tests is carried out with same glass substrate.
The cross-cut test fissility of < resin film evaluates >
Peeling layer on the glass substrate for having peeling layer obtained in embodiment 2-1~2-3 and comparative example 2-1 is intersected
Cutting (in length and breadth the interval 1mm, similarly hereinafter), carries out the cutting of 100 grids (マ ス カ ッ ト).That is, being formd by the cross-cut
The mesh of 100 1mm square.
Then, in 100 mesh segmentation bonding partially adhesive tapes, which is removed, based on the following benchmarks (5B~
0B, B, A, AA) evaluation fissility.It shows the result in table 1.
< determinating reference >
5B:0% removes (no removing)
4B: the removing less than 5%
The removing of 3B:5~less than 15%
The removing of 2B:15~less than 35%
The removing of 1B:35~less than 65%
The removing of 0B:65%~less than 80%
The removing of B:80%~less than 95%
The removing of A:95%~less than 100%
AA:100% removing (all removings)
The evaluation > of the fissility of < resin substrate
Resin substrate peeling layer will be had obtained in embodiment 2-1~2-3 and comparative example 2-1 using cutting tool
The resin substrate of glass substrate is cut into the strip of 25mm wide.Then, cellophane is pasted in the front end of the resin substrate of cutting
Band, as test film.Use (strain) ア ト ニ ッ Network system push-and-pull tester in such a way that peel angle becomes 90 ° to the test
Piece carries out disbonded test, evaluates fissility based on following standards.Show the result in table 1.
< determinating reference >
5B:0% removes (no removing)
4B: the removing less than 5%
The removing of 3B:5~less than 15%
The removing of 2B:15~less than 35%
The removing of 1B:35~less than 65%
The removing of 0B:65%~less than 80%
The removing of B:80%~less than 95%
The removing of A:95%~less than 100%
AA:100% removing (all removings)
[table 1]
Confirmed by the result of table 1:, can not be by peeling layer from glass substrate for the peeling layer of embodiment 2-1~2-3
Resin substrate is only removed in removing ground, but cannot remove in comparative example 2-1.
Claims (7)
1. a kind of manufacturing method of peeling layer, which is characterized in that include following process: peeling layer formation is coated on composition
It is burnt into, the peeling layer formation includes with composition: being had from tetrabasic carboxylic acid on matrix, at 400 DEG C of maximum temperature or more
Two ends, any one of two end or both the closed polyamic acid of Ortho-Aminophenol and organic solvent.
2. the manufacturing method of peeling layer according to claim 1, wherein the polyamic acid is to make comprising aromatic diamine
Diamine component reacted with the acid dianhydride component comprising aromatic tetracarboxylic dianhydride obtained from polyamic acid.
3. the manufacturing method of peeling layer according to claim 2, wherein the aromatic diamine is to contain 1~5 benzene nucleus
Aromatic diamine.
4. the manufacturing method of peeling layer according to claim 2 or 3, wherein the aromatic tetracarboxylic dianhydride is to contain 1
The aromatic tetracarboxylic dianhydride of~5 benzene nucleus.
5. a kind of manufacturing method for the flexible electronic device for having resin substrate, which is characterized in that use peeling layer, the removing
Layer is to be formed using manufacturing method described in any one of Claims 1 to 44.
6. a kind of manufacturing method of flexible electronic device, it includes following process: using any one of Claims 1 to 44 institute
The manufacturing method stated is formed by peeling layer after coating resin substrate formation composition, at 450 DEG C of maximum temperature with enterprising
Row is burnt into and forms resin substrate.
7. the manufacturing method of flexible electronic device according to claim 5 or 6, wherein the resin substrate is that polyamides is sub-
Polyimide resin substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-238647 | 2016-12-08 | ||
| JP2016238647 | 2016-12-08 | ||
| PCT/JP2017/043907 WO2018105674A1 (en) | 2016-12-08 | 2017-12-07 | Release layer production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110049827A true CN110049827A (en) | 2019-07-23 |
Family
ID=62491565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780075610.XA Pending CN110049827A (en) | 2016-12-08 | 2017-12-07 | The manufacturing method of peeling layer |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6897690B2 (en) |
| KR (1) | KR102439472B1 (en) |
| CN (1) | CN110049827A (en) |
| TW (1) | TWI823841B (en) |
| WO (1) | WO2018105674A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158990A1 (en) * | 2015-03-31 | 2016-10-06 | 日産化学工業株式会社 | Composition for forming release layer, and release layer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071667A (en) * | 1995-04-13 | 2000-06-06 | Hitachi Chemical Co., Ltd. | Photosensitive resin composition containing a photosensitive polyamide resin |
| JP3809681B2 (en) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | Peeling method |
| JP4619461B2 (en) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | Thin film device transfer method and device manufacturing method |
| JP4619462B2 (en) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | Thin film element transfer method |
| GB0327093D0 (en) | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
| WO2011035920A1 (en) * | 2009-09-24 | 2011-03-31 | Corus Technology Bv | A method of preparing a polyetherimide coating on a metallic substrate |
| JP5834930B2 (en) * | 2011-09-09 | 2015-12-24 | 宇部興産株式会社 | Polyimide precursor aqueous solution composition and method for producing polyimide precursor aqueous solution composition |
| JP5723498B1 (en) * | 2013-10-23 | 2015-05-27 | 日本化薬株式会社 | Polyimide resin composition and thermally conductive adhesive film using the same |
| JP6591526B2 (en) * | 2014-07-22 | 2019-10-16 | ブルーワー サイエンス アイ エヌ シー． | Polyimide as a laser release material for 3-D IC applications |
| JP6503674B2 (en) * | 2014-09-30 | 2019-04-24 | 東レ株式会社 | RESIN LAMINATE, ORGANIC EL ELEMENT SUBSTRATE USING THE SAME, COLOR FILTER SUBSTRATE, METHOD FOR MANUFACTURING THEM, AND FLEXIBLE ORGANIC EL DISPLAY |
| CN111234217A (en) * | 2015-02-10 | 2020-06-05 | 日产化学工业株式会社 | Composition for forming release layer |
| JP6491742B2 (en) * | 2015-04-17 | 2019-03-27 | 旭化成株式会社 | Resin composition, polyimide resin film, and method for producing the same |
-
2017
- 2017-12-07 KR KR1020197019447A patent/KR102439472B1/en active IP Right Grant
- 2017-12-07 WO PCT/JP2017/043907 patent/WO2018105674A1/en active Application Filing
- 2017-12-07 CN CN201780075610.XA patent/CN110049827A/en active Pending
- 2017-12-07 JP JP2018555052A patent/JP6897690B2/en active Active
- 2017-12-08 TW TW106143087A patent/TWI823841B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016158990A1 (en) * | 2015-03-31 | 2016-10-06 | 日産化学工業株式会社 | Composition for forming release layer, and release layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6897690B2 (en) | 2021-07-07 |
| WO2018105674A1 (en) | 2018-06-14 |
| TW201829668A (en) | 2018-08-16 |
| JPWO2018105674A1 (en) | 2019-10-24 |
| TWI823841B (en) | 2023-12-01 |
| KR102439472B1 (en) | 2022-09-05 |
| KR20190094197A (en) | 2019-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI770374B (en) | Polyimide, polyimide solution, polyimide, polyimide film, laminate and flexible device, and method for producing polyimide film | |
| JP6760287B2 (en) | Polyamic acid solution composition and polyimide film | |
| TWI742702B (en) | Composition for forming peeling layer and peeling layer | |
| KR102602473B1 (en) | Composition for forming release layer | |
| WO2014046180A9 (en) | Polyimide and molded body thereof | |
| WO2013121917A1 (en) | Diamine, polyimide, and polyimide film and utilization thereof | |
| TWI659064B (en) | Resin composition for display substrate, resin film for display substrate, and method for manufacturing resin film for display substrate | |
| JP2014009305A (en) | Resin composition, laminate and method for manufacturing laminate | |
| CN107406674A (en) | Peel ply formation composition | |
| TW201706363A (en) | Composition for forming release layer, and release layer | |
| CN110049827A (en) | The manufacturing method of peeling layer | |
| CN110050013A (en) | The manufacturing method of peeling layer | |
| CN110099974A (en) | Composition is used in the formation of substrate protective layer | |
| CN110062784A (en) | The manufacturing method of peeling layer | |
| CN109476912A (en) | Composition is used in peeling layer formation | |
| CN109196051A (en) | Peeling layer, which is formed, uses composition and peeling layer | |
| TW202035524A (en) | Polyamic acid and polyimide, optical film and display device, and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |