CN109580027B - Flexible temperature sensor and preparation method thereof - Google Patents
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- CN109580027B CN109580027B CN201811451406.6A CN201811451406A CN109580027B CN 109580027 B CN109580027 B CN 109580027B CN 201811451406 A CN201811451406 A CN 201811451406A CN 109580027 B CN109580027 B CN 109580027B
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
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- H—ELECTRICITY
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Abstract
The invention discloses a flexible temperature sensor and a preparation method thereof. The flexible temperature sensor includes: the flexible resistance-variable temperature-sensitive electrode layer comprises a first degradable elastic substrate, a second degradable elastic substrate and a flexible resistance-variable temperature-sensitive electrode layer; the flexible resistance-change temperature-sensitive electrode layer is arranged between the first degradable elastic substrate and the second degradable elastic substrate; the flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire, a degradable interdigital structure film electrode and a conductive particle-doped AIDCN film; the conductive particle doped AIDCN film covers the surface of the degradable interdigital structure film electrode. The conductive particle doped AIDCN film is used as a temperature sensing medium, discontinuous conductive particles are the key for generating resistance change when the temperature changes, the distance between the conductive particles in the n-type semiconductor AIDCN film changes, the resistivity of the chain-shaped conduction circuit changes along with the change of the temperature, and the change of the resistivity is expressed as the change of the resistivity along with the change of the temperature.
Description
Technical Field
The invention relates to the field of flexible temperature sensing electronic devices, in particular to a flexible temperature sensor and a preparation method thereof
Background
At present, the curved surface temperature is sensed by hands, which is laborious and tedious. The temperature can be monitored wirelessly and in real time by using the RFID tag, but the tag manufacturing material is generally inedible metal and even possibly toxic, and the tag manufacturing cost is high. There are four types of rigid temperature sensors currently in production, namely resistance temperature detectors, thermocouples, thermistors, and integrated circuit sensors with digital and analog interfaces. Most of the four types of temperature sensors adopt silicon-based manufacturing technology, but the equipment required by the silicon-based manufacturing technology is expensive, the production scale is easily limited, and the environmental pollution is large. In addition, because metal and semiconductor materials have high hardness, the method is not suitable for the field of curved surface temperature sensing measurement, and has the problems of complex preparation process, high manufacturing cost, complex signal processing, high process requirement and the like. Currently, the key technology of a typical temperature sensor is mainly monopolized by a few large companies all over the world. The development of flexible devices with low cost, capability of being attached, wearable, portable, foldable and the like is widely concerned by researchers at home and abroad, and gradually becomes an important leading-edge research field at present. The novel temperature sensor which is low in cost, can be attached, has less pollution and can sense the temperature of the curved surface in real time is a brand new problem in the world and is a problem to be solved urgently in the research fields of scientific research, environmental monitoring, daily life, intelligent wearable equipment and the like.
Disclosure of Invention
The invention aims to provide a flexible temperature sensor which is low in cost and power consumption and can sense the temperature of a curved surface in real time and a preparation method thereof.
In order to achieve the purpose, the invention provides the following scheme:
a flexible temperature sensor comprising: the flexible resistance-variable temperature-sensitive electrode layer comprises a first degradable elastic substrate, a second degradable elastic substrate and a flexible resistance-variable temperature-sensitive electrode layer; the flexible resistance-change temperature-sensitive electrode layer is arranged between the first degradable elastic substrate and the second degradable elastic substrate; the flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire, a degradable interdigital structure film electrode and a conductive particle-doped AIDCN film; the conductive particle doped AIDCN film covers the surface of the degradable interdigital structure film electrode.
Optionally, the first degradable elastomeric substrate and the second degradable elastomeric substrate each comprise a biodegradable elastomer and a passive film; the passivation film covers the surface of the biodegradable elastomer; the passivation film is a silicon dioxide film, a zirconium oxide film, a silicon nitride film, a silicon carbide film, an aluminum oxide film, a boron nitride film or a titanium dioxide film.
Optionally, the thickness of the biodegradable elastomer is 0.5-250 μm, and the thickness of the passivation film is 0.05-2 μm; the width of the degradable serpentine conductor is 5-20 μm; the thickness ranges of the degradable serpentine lead and the degradable interdigital structure film electrode are 0.1-1 mu m; the thickness of the conductive particle doped AIDCN film is 0.01-20 μm.
Optionally, the biodegradable elastomer is a polylactic acid biological elastomer, a polyglycolide biological elastomer, a polyurethane biological elastomer, a network type polyester biological elastomer, a polyhydroxyalkanoate biological elastomer, a polyether ester biological elastomer, a polypeptide biological elastomer or a polyorthoester biological elastomer.
Optionally, the degradable serpentine lead and the degradable interdigital structure film electrode are made of metal magnesium, metal iron, metal zinc, zinc-based alloy or magnesium-based alloy.
Optionally, the conductive particles of the conductive particle doped aid cn film are carbon black, graphene, carbon nanotubes, carbon fibers, graphite, metal powder, metal oxide or metal fibers.
Optionally, a polydimethylsiloxane packaging layer is arranged on the side surface of the laminated structure of the first degradable elastic substrate, the second degradable elastic substrate and the flexible resistance-change temperature-sensitive electrode layer.
A method of making a flexible temperature sensor, the method comprising:
selecting plasma enhanced chemical vapor deposition method, and performing N treatment at 100 deg.C2The O flow is 1750sccm, the silane flow is 500sccm, the radio frequency power is 120W, the furnace tube pressure is 1.2 Torr, the radio frequency time is 10min, the distance between polar plates is 20mm, and 250nm of SiO is deposited on the surface of the polylactic acid biodegradable elastomer2A passivation film forming a first degradable elastic substrate;
selecting radio frequency magnetron sputtering method, using high-purity silicon target as target material, using Ar and O2Controlling argon flow to be 20sccm, radio frequency power to be 100W and substrate temperature to be below 100 ℃ as a gas source, and growing SiO with the thickness of 250nm on the surface of the polyglycolide biodegradable elastomer2A passivation film forming a second degradable elastic substrate;
preparing a degradable metal film on the surface of a passivation film of a second degradable elastic substrate by adopting a magnetron sputtering method, an electrodeposition method, a laser pulse deposition method, a vacuum evaporation method, a low-temperature chemical vapor deposition method or a plasma enhanced chemical vapor deposition method, and patterning the degradable metal film by combining an ultraviolet lithography method to prepare a degradable serpentine wire and a degradable interdigital structure film electrode; mixing carbon black, graphene, carbon nano tubes, carbon fibers, graphite, metal powder, metal oxides or metal fibers with an organic micromolecular material AIDCN according to a preset proportion, stirring for 5-10min, and covering the surface of the degradable interdigital structure thin film electrode by a thermal evaporation deposition method to form a flexible resistance-changing temperature-sensitive electrode layer;
and arranging the first degradable elastic substrate on the flexible resistance-change temperature-sensitive electrode layer to form a laminated structure with the second degradable elastic substrate.
Optionally, the method further includes: and packaging the side face of a laminated structure formed by the first degradable elastic substrate, the flexible resistance-change temperature-sensitive electrode layer and the second degradable elastic substrate by adopting polydimethylsiloxane.
Optionally, the method further includes: and preparing a passivation film on the surface of the biodegradable elastomer by adopting a direct optical CVD low-temperature growth method, a microwave ECR magnetron reactive sputtering method or a radio frequency sputtering deposition method.
Compared with the prior art, the invention has the following technical effects: the flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire, a degradable interdigital structure film electrode and a conductive particle-doped AIDCN film, the conductive particle-doped AIDCN film is used as a temperature-sensitive medium, discontinuous conductive particles are the key of resistance change during temperature change, a chain-shaped conduction circuit is formed microscopically after the surface of the degradable interdigital structure film electrode is covered with the conductive particle-doped AIDCN film, and when the temperature changes, the distance between the conductive particles in the n-type semiconductor AIDCN film changes, and the resistivity of the chain-shaped conduction circuit changes accordingly. When the environmental temperature changes, different temperatures correspond to different resistance states of the device. The temperature sensor provided by the invention adopts the degradable elastic substrate, the degradable serpentine wire, the degradable interdigital structure film electrode and the harmless passivation film, so that the cost is reduced and the environmental pollution is reduced. The flexible temperature sensor provided by the invention can be well attached to a measured curved surface, is simple in film forming and low in cost, has an industrial value, and is beneficial to popularization and application.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a flexible temperature sensor according to an embodiment of the present invention;
fig. 2 is a flowchart of a flexible temperature sensing manufacturing method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a flexible temperature sensor which is low in cost and power consumption and can sense the temperature of a curved surface in real time and a preparation method thereof.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1, the flexible temperature sensor includes a first degradable elastic substrate (above the degradable serpentine wire 5 in the figure), a second degradable elastic substrate (below the degradable serpentine wire 5 in the figure), and a flexible resistance-variable temperature-sensitive electrode layer therebetween. And the side surfaces of the laminated structure of the first degradable elastic substrate, the second degradable elastic substrate and the flexible resistance-change temperature-sensitive electrode layer are provided with polydimethylsiloxane packaging layers.
The first degradable elastic substrate and the second degradable elastic substrate comprise a biodegradable elastomer 1 and a passive film 2. The passivation film 2 covers the surface of the biodegradable elastomer 1. The biodegradable elastomer 1 is polylactic acid biological elastomer, polyglycolide biological elastomer, polyurethane biological elastomer, network type polyester biological elastomer, polyhydroxyalkanoate biological elastomer, polyether ester biological elastomer, polypeptide biological elastomer or polyorthoester biological elastomer; the thickness of the biodegradable elastomer 1 is 0.5 to 250 μm. The thickness of the passive film 2 is 0.05-2 μm; the passivation film 2 is a silicon dioxide film, a zirconium oxide film, a silicon nitride film, a silicon carbide film, an aluminum oxide film, a boron nitride film or a titanium dioxide film.
The flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire 5, a degradable interdigital structure film electrode 3 and a conductive particle-doped AIDCN film 4. And the conductive particle doped AIDCN film cover 4 is covered on the surface of the degradable interdigital structure film electrode 3. The degradable serpentine lead 5 and the degradable interdigital structure film electrode 3 are made of metal magnesium, metal iron, metal zinc, zinc-based alloy or magnesium-based alloy. The width of the degradable serpentine conductor 5 is 5-20 μm; the thickness range of the degradable serpentine conductor 5 and the degradable interdigital structure thin film electrode 3 is 0.1-1 μm. The conductive particles of the conductive particle doped AIDCN film 4 are carbon black, graphene, carbon nanotubes, carbon fibers, graphite, metal powder, metal oxides or metal fibers. The thickness of the conductive particle doped AIDCN film 4 is 0.01-20 μm.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire, a degradable interdigital structure film electrode and a conductive particle-doped AIDCN film, the conductive particle-doped AIDCN film is used as a temperature-sensitive medium, discontinuous conductive particles are the key of resistance change during temperature change, a chain-shaped conduction circuit is formed microscopically after the surface of the degradable interdigital structure film electrode is covered with the conductive particle-doped AIDCN film, and when the temperature changes, the distance between the conductive particles in the n-type semiconductor AIDCN film changes, and the resistivity of the chain-shaped conduction circuit changes accordingly. When the environmental temperature changes, different temperatures correspond to different resistance states of the device. The temperature sensor provided by the invention adopts the degradable elastic substrate, the degradable serpentine wire, the degradable interdigital structure film electrode and the harmless passivation film, so that the cost is reduced and the environmental pollution is reduced. The flexible temperature sensor provided by the invention can be well attached to a measured curved surface, is simple in film forming and low in cost, has an industrial value, and is beneficial to popularization and application.
As shown in fig. 2, the method for manufacturing the flexible temperature sensor includes:
step 201: selecting plasma enhanced chemical vapor deposition method, and performing N treatment at 100 deg.C2The O flow is 1750sccm, the silane flow is 500sccm, the radio frequency power is 120W, the furnace tube pressure is 1.2 Torr, the radio frequency time is 10min, the distance between polar plates is 20mm, and 250nm of SiO is deposited on the surface of the polylactic acid biodegradable elastomer2And passivating the film to form a first degradable elastic substrate.
Step 202: selecting radio frequency magnetron sputtering method, using high-purity silicon target as target material, using Ar and O2Controlling argon flow to be 20sccm, radio frequency power to be 100W and substrate temperature to be below 100 ℃ as a gas source, and growing SiO with the thickness of 250nm on the surface of the polyglycolide biodegradable elastomer2Passivating the film to form a second degradable elastic substrate.
And a passivation film can be prepared on the surface of the biodegradable elastomer by adopting a direct optical CVD low-temperature growth method, a microwave ECR magnetron reactive sputtering method or a radio frequency sputtering deposition method.
Step 203: preparing a degradable metal film on the surface of a passivation film of a second degradable elastic substrate by adopting a magnetron sputtering method, an electrodeposition method, a laser pulse deposition method, a vacuum evaporation method, a low-temperature chemical vapor deposition method or a plasma enhanced chemical vapor deposition method, and patterning the degradable metal film by combining an ultraviolet lithography method to prepare a degradable serpentine wire and a degradable interdigital structure film electrode; mixing carbon black, graphene, carbon nano tubes, carbon fibers, graphite, metal powder, metal oxides or metal fibers and an organic micromolecular material AIDCN according to a preset proportion, stirring for 5-10min, and covering the surface of the degradable interdigital structure thin film electrode by a thermal evaporation deposition method to form a flexible resistance-changing temperature-sensitive electrode layer.
Step 204: and arranging the first degradable elastic substrate on the flexible resistance-change temperature-sensitive electrode layer to form a laminated structure with the second degradable elastic substrate.
The method further comprises the following steps: and packaging the side face of a laminated structure formed by the first degradable elastic substrate, the flexible resistance-change temperature-sensitive electrode layer and the second degradable elastic substrate by adopting polydimethylsiloxane.
The preparation method comprises the following specific steps: (1) cutting 10 μm thick beta-crystalline highly oriented polylactic acid film into desired round or square shape, surface treating, and treating at 100 deg.C with N2The O flow is 1750sccm, the silane flow is 500sccm, the radio frequency power is 120W, the furnace tube pressure is 1.2 Torr, the radio frequency time is 10min, the distance between polar plates is 20mm, and 250nm of SiO is deposited on the surface of the polylactic acid biodegradable elastomer by a plasma enhanced chemical vapor deposition method2The passivation film forms a first degradable elastic substrate; (2) selecting radio frequency magnetron sputtering method, using high-purity silicon target as target material, using Ar and O2Controlling argon flow to be 20sccm, radio frequency power to be 100W and substrate temperature to be below 100 ℃ as a gas source, and growing SiO with the thickness of 250nm on the surface of the polyglycolide biodegradable elastomer2The passivation film forms a second degradable elastic substrate; (3) at room temperature, adopting a magnetron sputtering method to prepare SiO on a second degradable elastic substrate2Depositing a Zn film with the thickness of 500nm on the surface of the passivation layer, spin-coating photoresist AZ1518 on the surface of the Zn film, baking for 3min at 100 ℃ in a hot plate, covering a photoetching plate with a shadow pattern on the surface of the positive photoresist, and irradiating the second degradable elastic substrate for a certain time by using ultraviolet light through the photoetching plate, so that the photoresist outside the pattern is subjected to chemical composition change and is dissolved in a developing solution, and the unexposed photoresist at the pattern part protected by the shadow is not dissolved in the developing solution and still has a protection effect on the pattern. Finally, corroding the exposed zinc film outside the pattern by using Zn corrosive liquid (hydrochloric acid) to show the degradable serpentine wire and the degradable interdigital structure film electrode pattern; mixing 20% of graphene quantum dots and 80% of organic micromolecular material AIDCN by mass percentage, stirring at high speed for 10min, and performing thermal evaporation depositionThe graphene doped AIDCN temperature-sensitive semiconductor film is deposited on the second degradable elastic substrate and serves as a temperature-sensitive medium, discontinuous conductive particles are the key of resistance change during temperature change, when the temperature changes, the distance between the conductive particles in the n-type semiconductor AIDCN film changes, the resistivity of the chain-shaped conductive circuit changes accordingly, and the resistivity changes along with the temperature change.
Packaging PDMS on the first degradable elastic substrate and a second degradable elastic substrate with a graphene-doped AIDCN temperature-sensitive semiconductor film growing on the surface, spin-coating PDMS on the side surface of the device at a spin-coating speed of 5000rpm/s for 30s, pre-imidizing at 85 ℃ for 3min, and imidizing at 100 ℃ for 30min to obtain the flexible temperature sensor.
The flexible temperature sensor prepared by the method has the advantages of low cost, small pollution and simple process.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A flexible temperature sensor, comprising: the flexible resistance-variable temperature-sensitive electrode layer comprises a first degradable elastic substrate, a second degradable elastic substrate and a flexible resistance-variable temperature-sensitive electrode layer; the flexible resistance-change temperature-sensitive electrode layer is arranged between the first degradable elastic substrate and the second degradable elastic substrate; the flexible resistance-change temperature-sensitive electrode layer comprises a degradable serpentine wire, a degradable interdigital structure film electrode and a conductive particle-doped AIDCN film; the conductive particle doped AIDCN film covers the surface of the degradable interdigital structure film electrode;
when the conductive particle doped AIDCN film covers the surface of the degradable interdigital structure film electrode, a chain-shaped conduction circuit can be formed, when the temperature changes, the distance between the conductive particles in the AIDCN film can change, and the resistivity of the chain-shaped conduction circuit can also change;
the first and second degradable elastomeric substrates each comprise a biodegradable elastomer and a passivating film; the passivation film covers the surface of the biodegradable elastomer; the passivation film is a silicon dioxide film, a zirconium oxide film, a silicon nitride film, a silicon carbide film, an aluminum oxide film, a boron nitride film or a titanium dioxide film.
2. The flexible temperature sensor of claim 1, wherein the biodegradable elastomer has a thickness of 0.5-250 μ ι η, and the passivation film has a thickness of 0.05-2 μ ι η; the width of the degradable serpentine conductor is 5-20 μm; the thickness ranges of the degradable serpentine lead and the degradable interdigital structure film electrode are 0.1-1 mu m; the thickness of the conductive particle doped AIDCN film is 0.01-20 μm.
3. The flexible temperature sensor according to claim 1, wherein the biodegradable elastomer is a polylactic acid bio-elastomer, a polyglycolide bio-elastomer, a polyurethane bio-elastomer, a network type polyester bio-elastomer, a polyhydroxyalkanoate bio-elastomer, a polyetherester bio-elastomer, a polypeptide bio-elastomer, or a polyorthoester bio-elastomer.
4. The flexible temperature sensor according to claim 1, wherein the material of the degradable serpentine wire and the degradable interdigitated structure thin film electrode is magnesium metal, iron metal, zinc-based alloy or magnesium-based alloy.
5. The flexible temperature sensor of claim 1, wherein the conductive particles of the conductive particle doped AIDCN film are carbon black, graphene, carbon nanotubes, carbon fibers, graphite, metal powder, metal oxide, or metal fibers.
6. The flexible temperature sensor according to claim 1, wherein a polydimethylsiloxane encapsulation layer is disposed on a side surface of the laminated structure of the first degradable elastic substrate, the second degradable elastomer substrate and the flexible resistance-change temperature-sensitive electrode layer.
7. A method of manufacturing a flexible temperature sensor according to any one of claims 1 to 6, characterized in that the method comprises:
selecting plasma enhanced chemical vapor deposition method, and performing N treatment at 100 deg.C2The O flow is 1750sccm, the silane flow is 500sccm, the radio frequency power is 120W, the furnace tube pressure is 1.2 Torr, the radio frequency time is 10min, the distance between polar plates is 20mm, and 250nm of SiO is deposited on the surface of the polylactic acid biodegradable elastomer2A passivation film forming a first degradable elastic substrate;
selecting radio frequency magnetron sputtering method, using high-purity silicon target as target material, using Ar and O2Controlling argon flow to be 20sccm, radio frequency power to be 100W and substrate temperature to be below 100 ℃ as a gas source, and growing SiO with the thickness of 250nm on the surface of the polyglycolide biodegradable elastomer2A passivation film forming a second degradable elastic substrate;
preparing a degradable metal film on the surface of a passivation film of a second degradable elastic substrate by adopting a magnetron sputtering method, an electrodeposition method, a laser pulse deposition method, a vacuum evaporation method, a low-temperature chemical vapor deposition method or a plasma enhanced chemical vapor deposition method, and patterning the degradable metal film by combining an ultraviolet lithography method to prepare a degradable serpentine wire and a degradable interdigital structure film electrode; mixing carbon black, graphene, carbon nano tubes, carbon fibers, graphite, metal powder, metal oxides or metal fibers with an organic micromolecular material AIDCN according to a preset proportion, stirring for 5-10min, and covering the surface of the degradable interdigital structure thin film electrode by a thermal evaporation deposition method to form a flexible resistance-changing temperature-sensitive electrode layer;
and arranging the first degradable elastic substrate on the flexible resistance-change temperature-sensitive electrode layer to form a laminated structure with the second degradable elastic substrate.
8. The method of manufacturing according to claim 7, further comprising: and packaging the side face of a laminated structure formed by the first degradable elastic substrate, the flexible resistance-change temperature-sensitive electrode layer and the second degradable elastic substrate by adopting polydimethylsiloxane.
9. The method of manufacturing according to claim 7, further comprising: and preparing a passivation film on the surface of the biodegradable elastomer by adopting a direct optical CVD low-temperature growth method, a microwave ECR magnetron reactive sputtering method or a radio frequency sputtering deposition method.
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| CN111504490A (en) * | 2020-03-30 | 2020-08-07 | 东华大学 | Flexible thermal resistance temperature sensor and preparation and application thereof |
| CN111964800A (en) * | 2020-06-28 | 2020-11-20 | 中山大学 | Temperature sensor, preparation method thereof and sensing device applying temperature sensor |
| CN112013984A (en) * | 2020-09-09 | 2020-12-01 | 哈尔滨理工大学 | Wearable flexible temperature sensor and preparation method thereof |
| CN112504498B (en) * | 2021-02-03 | 2021-04-20 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
| CN113091811A (en) * | 2021-03-31 | 2021-07-09 | 电子科技大学 | Flexible temperature and pressure integrated sensor and preparation method and application thereof |
| CN114623947B (en) * | 2022-03-24 | 2023-10-27 | 广东粤港澳大湾区协同创新研究院 | Flexible temperature sensor and preparation method thereof |
| CN115505156B (en) * | 2022-09-27 | 2023-11-17 | 武汉工程大学 | Patternable full-degradable bio-based composite flexible electronic device and preparation method thereof |
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