CN109580027A - A kind of flexibility temperature sensor and preparation method - Google Patents
A kind of flexibility temperature sensor and preparation method Download PDFInfo
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- CN109580027A CN109580027A CN201811451406.6A CN201811451406A CN109580027A CN 109580027 A CN109580027 A CN 109580027A CN 201811451406 A CN201811451406 A CN 201811451406A CN 109580027 A CN109580027 A CN 109580027A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
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Abstract
The invention discloses a kind of flexibility temperature sensor and preparation methods.The flexibility temperature sensor includes: the first degradable elasticity substrate, the second degradable elasticity substrate and the temperature sensitive electrode layer of flexible resistive；The temperature sensitive electrode layer of the flexibility resistive is arranged among the first degradable elasticity substrate and the second degradable elasticity substrate；The flexibility temperature sensitive electrode layer of resistive includes degradable snakelike conducting wire, degradable interdigital structure membrane electrode and conductive particle doping type AIDCN film；The conductive particle doping type AIDCN film is covered on the degradable interdigital structure membrane electrode surface.The present invention is using conductive particle doping type AIDCN film as temperature sensing medium, resistance variations are generated when discrete conductive particle is the key that temperature change, when the temperature varies, distance changes between conductive particle in n-type semiconductor AIDCN film, the resistivity of chain turning circuit changes correspondingly, and the resistivity for showing as varying with temperature changes.
Description
Technical field
The present invention relates to flexible temperature-sensitive field of electronic devices, more particularly to a kind of flexibility temperature sensor and preparation method
Background technique
Commonly use hand at present to perceive curved surface temperature, i.e., it is laborious and cumbersome.Use RFID label tag can be with wireless real-time monitoring temperature
Degree, but forming label material is usually inedible metal, in some instances it may even be possible to be it is toxic, and forming label cost compared with
It is high.There are mainly four types of the rigid temperature sensors of commercialization at present, is resistance temperature detector, thermocouple, temperature-sensitive electricity respectively
Hinder device and the integrated circuit sensor with digital and analog interface.These four types of temperature sensors use silicon substrate to manufacture skill mostly
Art, but equipment needed for silicon substrate manufacturing technology is expensive, production scale is vulnerable to limitation, and environmental pollution is big.Further, since metal
High with semiconductor material hardness, discomfort shares curved surface temperature-sensitive fields of measurement, and that there are preparation sections is complicated, involves great expense, signal
Processing is complicated, technique requires high problems.Currently, typical temperature sensor key technology is mainly monopolized global several
In major company, family hand.Developing low-cost the flexible devices such as can attach, is wearable, is portable, is foldable by domestic and international researcher
Extensive concern, and it is increasingly becoming current important research frontier.Low cost is found, can attach, pollute less and can be real-time
The New temperature sensor for perceiving curved surface temperature is worldwide completely new project and scientific research, environmental monitoring, daily
The research fields urgent problem to be solved such as life and intelligent wearable device.
Summary of the invention
The object of the present invention is to provide a kind of low cost, low-power consumption, the flexible temperature biographies for capableing of real-time perception curved surface temperature
Sensor and preparation method.
To achieve the above object, the present invention provides following schemes:
A kind of flexibility temperature sensor, comprising: the first degradable elasticity substrate, the second degradable elasticity substrate and flexible resistance
The quick electrode layer of alternating temperature；The temperature sensitive electrode layer setting of flexibility resistive can in the first degradable elasticity substrate and described second
Among elastic substrates of degrading；The flexibility temperature sensitive electrode layer of resistive includes degradable snakelike conducting wire, degradable interdigital structure film
Electrode and conductive particle doping type AIDCN film；The conductive particle doping type AIDCN film is covered on the degradable fork
Refer to structural membrane electrode surface.
Optionally, the first degradable elasticity substrate and the second degradable body substrate include biodegradable
Elastomer and passivating film；The passivating film is covered on the biodegradable elastomers surface；The passivating film is titanium dioxide
Silicon thin film, zirconia film, silicon nitride film, carborundum films, aluminum oxide film, boron nitride pellicle or titanium deoxid film.
Optionally, the biodegradable elastomers with a thickness of 0.5-250 μm, the passivating film with a thickness of 0.05-2
μm；The width of the degradable snakelike conducting wire is 5-20 μm；The degradable snakelike conducting wire and degradable interdigital structure thin-film electro
The thickness range of pole is 0.1-1 μm；The conductive particle doping type AIDCN film with a thickness of 0.01-20 μm.
Optionally, the biodegradable elastomers are polylactic acid bioelastomer, polyglycolide bioelastomer, poly- ammonia
Ester biological elastomer, network-type polyester bioelastomer, polyhydroxy-alkanoate bioelastomer, polyether ester bioelastomer,
Poly- peptide bioelastomer or polyorthoester bioelastomer.
Optionally, the material of the degradable snakelike conducting wire and degradable interdigital structure membrane electrode is magnesium metal, metal
Iron, metallic zinc, zinc-containing alloy or magnesium base alloy.
Optionally, the conductive particle of the conductive particle doping type AIDCN film is carbon black, graphene, carbon nanotube, carbon
Fiber, graphite, metal powder, metal oxide or metallic fiber.
Optionally, the first degradable elasticity substrate, the second degradable body substrate and the flexible resistive
The stepped construction side of temperature sensitive electrode layer is provided with dimethyl silicone polymer encapsulated layer.
A kind of preparation method of flexibility temperature sensor, which comprises
Select plasma reinforced chemical vapour deposition method, at 100 DEG C, N2O flow is 1750sccm, silane flow rate
500sccm, radio-frequency power 120W, tube pressure 1.2Tor, radio frequency time 10min, pole plate spacing are 20mm, in polylactic acid biology
The SiO of degradable elastomers surface deposition 250nm2Passivating film forms the first degradable elasticity substrate；
Radio-frequency magnetron sputter method is selected, using high-purity silicon target as target, with Ar and O2For gas source, controlling argon flow is
20sccm, radio-frequency power 100W, underlayer temperature is at 100 DEG C hereinafter, growing on polyglycolide biodegradable elastomers surface
The SiO of 250nm thickness2Passivating film forms the second degradable elasticity substrate；
Magnetron sputtering method, electrodeposition process, pulsed laser deposition are used in the passivation film surface of the second degradable elasticity substrate
Method, vacuum vapour deposition, low temperature chemical vapor deposition method or plasma enhanced chemical vapor deposition method preparation degradable metal are thin
Film makes degradable metal is thin-film patterning degradable snakelike conducting wire to be made and degradable interdigital structure is thin in conjunction with Ultraviolet lithography
Membrane electrode；By carbon black, graphene, carbon nanotube, carbon fiber, graphite, metal powder, metal oxide or metallic fiber with it is organic
Small molecule material AIDCN is mixed according to preset ratio, is stirred 5-10min, is covered on by thermal evaporation deposition method degradable interdigital
Structural membrane electrode surface forms the temperature sensitive electrode layer of flexible resistive；
The first degradable elasticity substrate is set on the temperature sensitive electrode layer of the flexible resistive, it is degradable with second
Elastic substrates form stepped construction.
Optionally, further includes: using dimethyl silicone polymer to the first degradable elasticity substrate, the flexible resistive
The stepped construction side that temperature sensitive electrode layer is formed with the second degradable elasticity substrate is packaged.
Optionally, further includes: using direct optical cvd low-temperature epitaxy method, microwave ECR Magnetron reactive sputtering or radio-frequency sputtering
Sedimentation prepares passivating film on the biodegradable elastomers surface.
Compared with prior art, the present invention has following technical effect that the flexible temperature sensitive electrode layer of resistive includes in the present invention
Degradable snakelike conducting wire, degradable interdigital structure membrane electrode and conductive particle doping type AIDCN film, are mixed with conductive particle
Miscellaneous type AIDCN film generates resistance variations, can drop as temperature sensing medium when discrete conductive particle is the key that temperature change
After solving interdigital structure membrane electrode surface covering conductive particle doping type AIDCN film, microcosmic upper formation chain turning circuit, when
When temperature changes, distance changes between the conductive particle in n-type semiconductor AIDCN film, chain turning circuit
Resistivity changes correspondingly.When variation of ambient temperature, different temperatures respective devices difference resistance state.And temperature provided by the invention passes
Sensor uses degradable elasticity substrate, degradable snakelike conducting wire, degradable interdigital structure membrane electrode, harmless passivating film, not only
It reduces costs and reduces environmental pollution.Flexibility temperature sensor provided by the invention can be excellently attached to tested song
Face forms a film simple and low in cost, has industrialization value, is conducive to promotion and application.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is flexibility temperature sensor of embodiment of the present invention structural schematic diagram；
Fig. 2 is the flow chart of flexibility of embodiment of the present invention temperature sensing preparation method.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of low cost, low-power consumption, the flexible temperature biographies for capableing of real-time perception curved surface temperature
Sensor and preparation method.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, flexibility temperature sensor includes the first degradable elasticity substrate (in figure on degradable snakelike conducting wire 5
Side), the second degradable elasticity substrate (degradable 5 lower section of snakelike conducting wire in figure) and positioned at the temperature sensitive electricity of flexible resistive between the two
Pole layer.The first degradable elasticity substrate, the second degradable body substrate and the temperature sensitive electrode layer of the flexible resistive
Stepped construction side be provided with dimethyl silicone polymer encapsulated layer.
The first degradable elasticity substrate and the second degradable body substrate include equal biodegradable elastomers 1 and
Passivating film 2.Passivating film 2 is covered on 1 surface of biodegradable elastomers.The biodegradable elastomers 1 are poly- cream
Sour bioelastomer, polyglycolide bioelastomer, polyurethane bioelastomer, network-type polyester bioelastomer, poly- hydroxyl
Alkyl acid ester biological elastomer, polyether ester bioelastomer, poly- peptide bioelastomer or polyorthoester bioelastomer；The life
Biodegradable elastomer 1 with a thickness of 0.5-250 μm.The passivating film 2 with a thickness of 0.05-2 μm；The passivating film 2 is two
Silicon oxide film, zirconia film, silicon nitride film, carborundum films, aluminum oxide film, boron nitride pellicle or titanium dioxide are thin
Film.
It is described flexibility the temperature sensitive electrode layer of resistive include degradable snakelike conducting wire 5, degradable interdigital structure membrane electrode 3 and
Conductive particle doping type AIDCN film 4.The conductive particle doping type AIDCN film covers 4 and covers in the degradable interdigital structure
3 surface of membrane electrode.The material of the degradable snakelike conducting wire 5 and degradable interdigital structure membrane electrode 3 is magnesium metal, metal
Iron, metallic zinc, zinc-containing alloy or magnesium base alloy.The width of the degradable snakelike conducting wire 5 is 5-20 μm；It is described degradable snakelike
The thickness range of conducting wire 5 and degradable interdigital structure membrane electrode 3 is 0.1-1 μm.The conductive particle doping type AIDCN film
4 conductive particle is carbon black, graphene, carbon nanotube, carbon fiber, graphite, metal powder, metal oxide or metallic fiber.
The conductive particle doping type AIDCN film 4 with a thickness of 0.01-20 μm.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: flexible resistive in the present invention
Temperature sensitive electrode layer includes degradable snakelike conducting wire, degradable interdigital structure membrane electrode and conductive particle doping type AIDCN thin
Film, using conductive particle doping type AIDCN film as temperature sensing medium, discrete conductive particle generates resistance when being temperature change
The key of variation, after degradable interdigital structure membrane electrode surface covers conductive particle doping type AIDCN film, microcosmic upper formation
Chain turning circuit, when the temperature varies, distance changes between the conductive particle in n-type semiconductor AIDCN film,
The resistivity of chain turning circuit changes correspondingly.When variation of ambient temperature, different temperatures respective devices difference resistance state.And this hair
The temperature sensor of bright offer uses degradable elasticity substrate, degradable snakelike conducting wire, degradable interdigital structure membrane electrode, nothing
Evil passivating film, not only reduces cost and reduces environmental pollution.Flexibility temperature sensor provided by the invention can be fine
Ground is attached at tested curved surface, forms a film simple and low in cost, has industrialization value, is conducive to promotion and application.
As shown in Fig. 2, flexibility temperature sensor preparation method includes:
Step 201: selection plasma reinforced chemical vapour deposition method, at 100 DEG C, N2O flow is 1750sccm, silane flow
500sccm, radio-frequency power 120W, tube pressure 1.2Tor, radio frequency time 10min are measured, pole plate spacing is 20mm, raw in polylactic acid
The SiO of Biodegradable surface of elastomer deposition 250nm2Passivating film forms the first degradable elasticity substrate.
Step 202: selection radio-frequency magnetron sputter method, using high-purity silicon target as target, with Ar and O2For gas source, argon gas is controlled
Flow is 20sccm, and radio-frequency power 100W, underlayer temperature is at 100 DEG C hereinafter, in polyglycolide biodegradable elastomers table
The SiO for long 250nm thickness of looking unfamiliar2Passivating film forms the second degradable elasticity substrate.
It can also be existed using direct optical cvd low-temperature epitaxy method, microwave ECR Magnetron reactive sputtering or radio frequency sputtering deposition method
The biodegradable elastomers surface prepares passivating film.
Step 203: using magnetron sputtering method, electrodeposition process, laser in the passivation film surface of the second degradable elasticity substrate
Pulsed deposition method, vacuum vapour deposition, low temperature chemical vapor deposition method or plasma enhanced chemical vapor deposition method preparation can drop
Metallic film is solved, makes degradable metal is thin-film patterning degradable snakelike conducting wire and degradable fork is made in conjunction with Ultraviolet lithography
Refer to structural membrane electrode；Carbon black, graphene, carbon nanotube, carbon fiber, graphite, metal powder, metal oxide or metal is fine
Dimension is mixed with organic small molecule material AIDCN according to preset ratio, stirs 5-10min, being covered on by thermal evaporation deposition method can
Degradation interdigital structure membrane electrode surface forms the temperature sensitive electrode layer of flexible resistive.
Step 204: the first degradable elasticity substrate being set on the flexible temperature sensitive electrode layer of resistive, with the
Two degradable elasticity substrates form stepped construction.
The method also includes: using dimethyl silicone polymer to the first degradable elasticity substrate, the flexible resistance
The stepped construction side that the quick electrode layer of alternating temperature is formed with the second degradable elasticity substrate is packaged.
Specific preparation process: (1) will with a thickness of 10 μm of highly oriented polylactic acid film with beta crystal it be cut into required circle
Shape is rectangular, after surface treatment, first at 100 DEG C, and N2O flow is 1750sccm, silane flow rate 500sccm, radio-frequency power
120W, tube pressure 1.2Tor, radio frequency time 10min, pole plate spacing are 20mm, pass through plasma reinforced chemical vapour deposition method
In the SiO of polylactic acid biodegradable elastomers surface deposition 250nm2Passivating film forms the first degradable elasticity substrate；(2) it selects
Radio-frequency magnetron sputter method is selected, using high-purity silicon target as target, with Ar and O2For gas source, control argon flow is 20sccm, radio frequency
Power is 100W, and underlayer temperature is at 100 DEG C hereinafter, in polyglycolide biodegradable elastomers surface growth 250nm thickness
SiO2Passivating film forms the second degradable elasticity substrate；(3) room temperature, using magnetron sputtering method in the second degradable elasticity substrate
SiO2Passivation layer surface deposits the Zn film of 500nm thickness, then in Zn film surface spin coating photoetching positive photoresist AZ1518, in 100 DEG C of hot plates
Front baking 3min, then in positive photoresist surface cover hatched pattern photolithography plate, with UV light permeability across photolithography plate to second
Degradable elasticity substrate carries out the irradiation of certain time, so that chemical composition change occurs for the photoresist outside pattern, is dissolved in development
Liquid, and protect unexposed photoresist still to have protective effect to pattern insoluble in developer solution by shade at pattern.It is finally rotten with Zn
The zinc erosion exposed outside pattern is fallen in erosion liquid (hydrochloric acid), just shows degradable snakelike conducting wire and degradable interdigital structure film
Electrode pattern；The small organic molecule material for being 80% with mass percentage by the graphene quantum dot that mass percentage is 20%
Expect AIDCN mixing, high-speed stirred 10min is deposited in the second degradable elasticity substrate by thermal evaporation deposition method and formed graphite
The temperature sensitive semiconductive thin film of alkene doping type AIDCN generates resistance when being temperature change as temperature sensing medium, discrete conductive particle
The key of variation, when the temperature varies, distance changes between the conductive particle in n-type semiconductor AIDCN film, chain
The resistivity of shape turning circuit changes correspondingly, and the resistivity for showing as varying with temperature changes.
It can by the second of the first degradable elasticity substrate and the surface growth temperature sensitive semiconductive thin film of graphene doping type AIDCN
PDMS is spun on the side of device using PDMS encapsulation by elastic substrates of degrading, after spin speed 5000rpm/s, spin coating 30s
In 85 DEG C of pre- imidization 3min, then 100 DEG C of imidization 30min, prepare flexibility temperature sensor.
The flexibility temperature sensor prepared by the above method is at low cost, pollution is small, simple process.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of flexibility temperature sensor characterized by comprising the first degradable elasticity substrate, the second degradable elasticity base
Bottom and the temperature sensitive electrode layer of flexible resistive；The setting of the flexibility resistive temperature sensitive electrode layer in the first degradable elasticity substrate and
Among the second degradable elasticity substrate；The flexibility temperature sensitive electrode layer of resistive includes degradable snakelike conducting wire, degradable fork
Refer to structural membrane electrode and conductive particle doping type AIDCN film；The conductive particle doping type AIDCN film is covered on institute
State degradable interdigital structure membrane electrode surface.
2. flexibility temperature sensor according to claim 1, which is characterized in that the first degradable elasticity substrate and institute
Stating the second degradable body substrate includes biodegradable elastomers and passivating film；The passivating film is covered on the biology
Degradable elastomers surface；The passivating film is silica membrane, zirconia film, silicon nitride film, carborundum films, oxygen
Change aluminium film, boron nitride pellicle or titanium deoxid film.
3. flexibility temperature sensor according to claim 1, which is characterized in that the thickness of the biodegradable elastomers
Be 0.5-250 μm, the passivating film with a thickness of 0.05-2 μm；The width of the degradable snakelike conducting wire is 5-20 μm；It is described
The thickness range of degradable snakelike conducting wire and degradable interdigital structure membrane electrode is 0.1-1 μm；The conductive particle doping type
AIDCN film with a thickness of 0.01-20 μm.
4. flexibility temperature sensor according to claim 1, which is characterized in that the biodegradable elastomers are poly- cream
Sour bioelastomer, polyglycolide bioelastomer, polyurethane bioelastomer, network-type polyester bioelastomer, poly- hydroxyl
Alkyl acid ester biological elastomer, polyether ester bioelastomer, poly- peptide bioelastomer or polyorthoester bioelastomer.
5. flexibility temperature sensor according to claim 1, which is characterized in that the degradable snakelike conducting wire and degradable
The material of interdigital structure membrane electrode is magnesium metal, metallic iron, metallic zinc, zinc-containing alloy or magnesium base alloy.
6. flexibility temperature sensor according to claim 1, which is characterized in that the conductive particle doping type AIDCN is thin
The conductive particle of film is carbon black, graphene, carbon nanotube, carbon fiber, graphite, metal powder, metal oxide or metallic fiber.
7. flexibility temperature sensor according to claim 1, which is characterized in that the first degradable elasticity substrate, institute
The stepped construction side for stating the second degradable body substrate and the temperature sensitive electrode layer of the flexible resistive is provided with poly dimethyl silicon
Oxygen alkane encapsulated layer.
8. the preparation method of flexibility temperature sensor described in -7 any one according to claim 1, which is characterized in that the side
Method includes:
Select plasma reinforced chemical vapour deposition method, at 100 DEG C, N2O flow is 1750sccm, and silane flow rate 500sccm is penetrated
Frequency power 120W, tube pressure 1.2Tor, radio frequency time 10min, pole plate spacing is 20mm, in polylactic acid biological degradable elasticity
The SiO of body surface face deposition 250nm2Passivating film forms the first degradable elasticity substrate；
Radio-frequency magnetron sputter method is selected, using high-purity silicon target as target, with Ar and O2For gas source, control argon flow is 20sccm,
Radio-frequency power is 100W, and underlayer temperature is at 100 DEG C hereinafter, thick in polyglycolide biodegradable elastomers surface growth 250nm
SiO2Passivating film forms the second degradable elasticity substrate；
The second degradable elasticity substrate passivation film surface using magnetron sputtering method, electrodeposition process, pulse laser deposition, true
Empty vapour deposition method, low temperature chemical vapor deposition method or plasma enhanced chemical vapor deposition method prepare degradable metal film, knot
Closing Ultraviolet lithography makes degradable metal is thin-film patterning degradable snakelike conducting wire and degradable interdigital structure thin-film electro is made
Pole；By carbon black, graphene, carbon nanotube, carbon fiber, graphite, metal powder, metal oxide or metallic fiber and organic small point
Sub- materials A IDCN is mixed according to preset ratio, is stirred 5-10min, is covered on degradable interdigital structure by thermal evaporation deposition method
Membrane electrode surface forms the temperature sensitive electrode layer of flexible resistive；
The first degradable elasticity substrate is set on the temperature sensitive electrode layer of the flexible resistive, with the second degradable elasticity
Substrate forms stepped construction.
9. preparation method according to claim 8, which is characterized in that further include: using dimethyl silicone polymer to described
The stacking knot that first degradable elasticity substrate, the flexible temperature sensitive electrode layer of resistive and the second degradable elasticity substrate are formed
Structure side is packaged.
10. preparation method according to claim 8, which is characterized in that further include: the direct optical cvd low-temperature epitaxy method of use,
Microwave ECR Magnetron reactive sputtering or radio frequency sputtering deposition method prepare passivating film on the biodegradable elastomers surface.
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| CN111504490A (en) * | 2020-03-30 | 2020-08-07 | 东华大学 | Flexible thermal resistance temperature sensor and preparation and application thereof |
| CN111964800A (en) * | 2020-06-28 | 2020-11-20 | 中山大学 | Temperature sensor, preparation method thereof and sensing device applying temperature sensor |
| CN112013984A (en) * | 2020-09-09 | 2020-12-01 | 哈尔滨理工大学 | Wearable flexible temperature sensor and preparation method thereof |
| CN112504498A (en) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
| CN112504498B (en) * | 2021-02-03 | 2021-04-20 | 南京高华科技股份有限公司 | Annular structure temperature sensor |
| CN113091811A (en) * | 2021-03-31 | 2021-07-09 | 电子科技大学 | Flexible temperature and pressure integrated sensor and preparation method and application thereof |
| CN114623947A (en) * | 2022-03-24 | 2022-06-14 | 广东粤港澳大湾区协同创新研究院 | Flexible temperature sensor and preparation method thereof |
| CN114623947B (en) * | 2022-03-24 | 2023-10-27 | 广东粤港澳大湾区协同创新研究院 | Flexible temperature sensor and preparation method thereof |
| CN115505156A (en) * | 2022-09-27 | 2022-12-23 | 武汉工程大学 | Patternable full-degradable bio-based composite material flexible electronic device and preparation method thereof |
| CN115505156B (en) * | 2022-09-27 | 2023-11-17 | 武汉工程大学 | Patternable full-degradable bio-based composite flexible electronic device and preparation method thereof |
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