CN109459143B - Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics - Google Patents
Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics Download PDFInfo
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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Abstract
Infrared sensor based on plasmon and piezoelectric film temperature frequency characteristic relates to infrared sensing technical field, has solved the lower problem of absorptivity among the prior art, includes reading out integrated circuit substrate, piezoelectric film and surface plasmon that from supreme connection gradually down. According to the uncooled infrared sensor, the surface plasmons are integrated on the surface of the piezoelectric film, the surface plasmons are utilized to realize enhanced absorption of an infrared spectrum, absorbed energy acts on the piezoelectric film, the absorption rate of the uncooled infrared sensor is improved from 20% to more than 80%, and meanwhile, the selectivity of the uncooled infrared sensor to an incident frequency spectrum is increased; the piezoelectric film and the surface plasmon are integrated on the read-out integrated circuit substrate, so that the integrated manufacture and the batch production can be realized, and the cost is low; the sensor has the advantages of the traditional uncooled infrared sensing, and is quick in response and high in sensing sensitivity.
Description
Technical Field
The invention relates to the technical field of infrared sensing, in particular to an infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics.
Background
The non-refrigeration type infrared sensor is also called a room temperature sensor and can work under the room temperature condition. Uncooled infrared sensors are typically thermal sensors, i.e., operate by sensing the thermal effect of infrared radiation. The uncooled infrared sensor has the advantages of small volume, light weight, long service life, low cost, low power consumption and the like, so that the uncooled infrared sensor is more and more widely applied to the fields of military affairs, security protection, medical detection and the like.
In recent years, with the development of micro-nano sensing technology, the application of piezoelectric films is also expanded to the field of uncooled infrared sensors. On one hand, the piezoelectric film usually has a miniature size, and has stronger external interference resistance; on the other hand, the piezoelectric film usually works in resonance simulation and has a high quality factor, so that the device shows high sensitivity; the two aspects promote the uncooled infrared sensor based on the piezoelectric film to show excellent signal-to-noise ratio indexes. In addition, the piezoelectric film adopts a frequency readout circuit mode, and the mode can effectively inhibit flicker noise (1/f noise).
However, the sensitive surface of the piezoelectric film has a low absorption of infrared radiation, typically less than 20%, and is not selective to the incident spectrum. Resulting in a low absorption of infrared radiation by the piezoelectric film based uncooled infrared sensor. Therefore, the low infrared spectrum absorption rate and the lack of selectivity to the incident spectrum of the uncooled infrared sensor based on the piezoelectric film are difficult to overcome.
Disclosure of Invention
In order to solve the above problems, the present invention provides an infrared sensor based on plasmon and temperature frequency characteristics of a piezoelectric film.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the infrared sensor based on the plasmon and the temperature frequency characteristics of the piezoelectric film comprises the piezoelectric film, a readout integrated circuit substrate connected with the piezoelectric film and a surface plasmon positioned on the upper surface of the piezoelectric film.
The invention has the beneficial effects that:
1. the structure of surface plasmons is integrated on the surface of the piezoelectric film, the surface plasmons are utilized to realize enhanced absorption of infrared spectra, and absorbed energy acts on the piezoelectric film, so that the problem of low absorption rate of the sensitive surface of the piezoelectric film on infrared radiation is solved, and the absorption rate of the uncooled infrared sensor is improved to be more than 80%.
2. The selectivity of the uncooled infrared sensor to an incident spectrum is increased by adopting the surface plasmon.
3. The uncooled infrared sensor is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure.
4. The invention integrates the piezoelectric film and the surface plasmon on the readout integrated circuit substrate, thereby having the advantages of integrated manufacture, batch production, low cost and the like.
5. The infrared sensor based on the plasmon and the temperature frequency characteristics of the piezoelectric film has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigerated infrared sensor.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of an uncooled infrared sensor of the present invention.
Fig. 2 is a schematic structural view of a surface plasmon of the uncooled infrared sensor of the present invention.
Fig. 3 is a schematic structural diagram of a piezoelectric film of the uncooled infrared sensor of the present invention.
Fig. 4 is a state diagram corresponding to the manufacturing process S1 of the uncooled infrared sensor of the present invention.
Fig. 5 is a state diagram corresponding to the manufacturing process S2 of the uncooled infrared sensor of the present invention.
Fig. 6 is a state diagram corresponding to the manufacturing process S3 of the uncooled infrared sensor of the present invention.
Fig. 7 is a state diagram corresponding to the manufacturing process S4 of the uncooled infrared sensor of the present invention.
Fig. 8 is a state diagram corresponding to S5 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 9 is a state diagram corresponding to S6 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 10 is a state diagram corresponding to the manufacturing process S7 of the uncooled infrared sensor of the present invention.
Fig. 11 is a state diagram corresponding to S8 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 12 is a state diagram corresponding to S9 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 13 is a state diagram corresponding to S10 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 14 is a state diagram corresponding to S11 of a manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 15 is a state diagram corresponding to S12 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 16 is a state diagram corresponding to S13 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 17 is a state diagram corresponding to S14 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 18 is a state diagram corresponding to S15 of the manufacturing process of the uncooled infrared sensor of the present invention.
In the figure: 1. the readout integrated circuit comprises a readout integrated circuit substrate 1-1, a first substrate electrode 1-2, a second substrate electrode 1-3, a substrate 2, a piezoelectric film 2-1, a top electrode 2-.2, a piezoelectric layer 2-3, a bottom electrode 2-4, a first electrode 2-5, a second electrode 2-6, a silicon substrate 2-7, a right through hole electrode 2-8, a left through hole electrode 2-9, a cavity 2-17, a right through hole 2-18, a left through hole 2-19, a groove 2-29, a sacrificial layer 3, a surface plasmon 3-1, a metal array layer 3-2, a dielectric layer 3-3, a metal reflecting layer 4, a surrounding plate 5 and an infrared window.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
An infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics, as shown in fig. 1, includes a readout integrated circuit substrate 1, a piezoelectric film 2, and a surface plasmon 3. The readout integrated circuit substrate 1, the piezoelectric film 2, and the surface plasmon 3 are connected in sequence. The readout integrated circuit substrate 1 is located at the bottommost layer, the piezoelectric film 2 is located at the middle layer, the surface plasmon 3 is located at the uppermost layer, and the surface plasmon 3 is located on the upper surface of the piezoelectric film 2. The readout integrated circuit substrate 1, the piezoelectric film 2 and the surface plasmon 3 can be directly connected, or the piezoelectric film 2 and the surface plasmon 3 can be connected through a first connecting layer, and the readout integrated circuit substrate 1 and the piezoelectric film 2 can be connected through a second connecting layer.
The invention provides an infrared sensor based on plasmon and piezoelectric film temperature frequency characteristics, and provides a non-refrigeration infrared sensor structure based on surface plasmon 3 and piezoelectric film 2 technologies. The sensing mechanism is that the surface plasmon 3 is utilized to realize the enhanced absorption of infrared spectrum, the absorbed energy acts on the piezoelectric film 2, and the infrared radiation amount is deduced by detecting the change of the electrical parameters of the piezoelectric film 2. According to the invention, by integrating the surface plasmon 3 structure on the surface of the piezoelectric film 2, the problem of low infrared radiation absorption rate of the sensitive surface of the piezoelectric film 2 is solved, and the absorption rate of the uncooled infrared sensor is improved to more than 80%. Meanwhile, the problem that the piezoelectric film 2 has no selectivity to an incident frequency spectrum is solved by integrating the surface plasmon 3 on the surface of the piezoelectric film 2, and the selectivity of the uncooled infrared sensor to the incident frequency spectrum is increased. The uncooled infrared sensor provided by the invention is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure. The piezoelectric film 2 and the surface plasmon 3 are integrated on the readout integrated circuit substrate 1, so that the readout integrated circuit substrate has the advantages of integrated manufacturing, mass production, low cost and the like. The uncooled infrared sensor has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigeration type infrared sensor.
The infrared sensor of the present invention further comprises a shroud 4 and an infrared window 5. As shown in fig. 18, a collar 4 is provided on the readout integrated circuit substrate 1, for example, by being adhered to the upper surface of the readout integrated circuit substrate 1 by a sealing adhesive. An infrared window 5 is provided on the shroud 4, and the infrared window 5 is located directly above the surface plasmon 3, allowing infrared light to irradiate the surface of the surface plasmon 3 through the infrared window 5. The readout integrated circuit substrate 1, the surrounding plate 4 and the infrared window 5 jointly form a sealed cavity, and the sealed cavity provides a vacuum environment for the piezoelectric film 2 and the surface plasmon 3 according to the requirements of working conditions.
The readout integrated circuit substrate 1 described above includes a substrate 1-3, two substrate electrodes, referred to as a first substrate electrode 1-1 and a second substrate electrode 1-2, respectively, which are disposed on the substrate 1-3 and connect the substrate 1-3, as shown in fig. 16. The function of the readout integrated circuit substrate 1 is to read the electrical signals of the piezoelectric film 2. The readout integrated circuit substrate 1 generally operates in a radio frequency band, and more specifically, the readout integrated circuit substrate 1 operates in a band (about 1GHz to 3GHz) near the resonance frequency of the piezoelectric thin film 2.
The surface plasmon 3 is composed of a metal reflecting layer 3-3, a dielectric layer 3-2 and a metal array layer 3-1 in sequence from bottom to top, as shown in fig. 2, the dielectric layer 3-2 is located on the upper surface of the metal reflecting layer 3-3, and the metal array layer 3-1 is located on the upper surface of the dielectric layer 3-2. The material of the metal array layer 3-1 is usually Au, Ag, Al, etc., but is not limited to these three metals; the metal array layer 3-1 can be fabricated by conventional semiconductor process and electron beam lithography. The material of the dielectric layer 3-2 is Ge or MgF2、SiO2Or AlN, etc., but is not limited to these materials.
The piezoelectric film 2 comprises a silicon substrate 2-6, a cavity 2-9, a bottom electrode 2-3, a piezoelectric layer 2-2, a top electrode 2-1, a left through hole electrode 2-8, a right through hole electrode 2-7, a first electrode 2-4 and a second electrode 2-5, and the specific structure is shown in fig. 3. The silicon substrate 2-6 is provided with a left through hole 2-18 and a right through hole 2-17, the left through hole electrode 2-8 is positioned in the left through hole 2-18, the left through hole electrode 2-8 fills the left through hole 2-18, the right through hole electrode 2-7 is positioned in the right through hole 2-17, and the right through hole electrode 2-7 fills the right through hole 2-17. The first electrode 2-4 and the second electrode 2-5 are both arranged on the lower surface of the silicon substrate 2-6, the first electrode 2-4 is connected with the lower end of the left through hole electrode 2-8 and can be formed by integrally forming the first electrode 2-4 and the left through hole electrode 2-8, and the second electrode 2-5 is connected with the lower end of the right through hole electrode 2-7 and can be formed by integrally forming the second electrode 2-5 and the right through hole electrode 2-7. The first electrode 2-4 is connected with a first substrate electrode 1-1 of the readout integrated circuit substrate 1, the second electrode 2-5 is connected with a second substrate electrode 1-2 of the readout integrated circuit substrate 1, the left through hole electrode 2-8 is communicated with the readout integrated circuit substrate 1 through the first electrode 2-4, and the right through hole electrode 2-7 is communicated with the readout integrated circuit substrate 1 through the second electrode 2-5. The cavity 2-9 is located on the upper surface of the silicon substrate 2-6, the bottom electrode 2-3 is arranged on the cavity 2-9 and the silicon substrate 2-6, the cavity 2-9 is located between the bottom electrode 2-3 and the silicon substrate 2-6, the bottom electrode 2-3 covers the cavity 2-9, namely the projection area of the cavity 2-9 on the silicon substrate 2-6 is smaller than the projection area of the bottom electrode 2-3 on the silicon substrate 2-6, namely the space between the bottom electrode 2-3 and the silicon substrate 2-6 is called the cavity 2-9, the cavity 2-9 is used for realizing reflection of sound waves, and mechanical energy is limited in the piezoelectric film 2. The piezoelectric layer 2-2 is arranged on the upper surface of the bottom electrode 2-3, the top electrode 2-1 is arranged on the upper surface of the piezoelectric layer 2-2, the top electrode 2-1 is connected with the metal reflecting layer 3-3 of the surface plasmon 3, the metal reflecting layer 3-3 is arranged on the upper surface of the top electrode 2-1, the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the top electrode 2-1 is connected with the upper end of the right through hole electrode 2-7. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the cavity 2-9 on the silicon substrate 2-6.
The bottom electrode 2-3 and the top electrode 2-1 are usually made of Mo, W, Al, Pt or Ni. The piezoelectric layer 2-2 is usually AlN, ZnO or LiNbO3Or quartz, etc. The right through-hole electrode 2-7, the left through-hole electrode 2-8, the first electrode 2-4 and the second electrode 2-5 are usually made by electroplating process, and the material can be selected from Au, Cu or Ni, but not limited to these materials.
According to the infrared sensor based on the temperature frequency characteristics of the plasmon and the piezoelectric film, the invention provides a preparation method of the infrared sensor based on the temperature frequency characteristics of the plasmon and the piezoelectric film. The method comprises the following specific steps:
s1, obtaining a silicon substrate 2-6
As shown in fig. 4, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-polished silicon wafers commonly used in the semiconductor industry.
S2, preparing left through holes 2-18, right through holes 2-17 and grooves 2-19 on silicon substrates 2-6
As shown in fig. 5, left via hole 2-18, right via hole 2-17 and groove 2-19 are prepared on silicon substrate 2-6 (in S12, groove 2-19 cooperates with bottom electrode 2-3 to become cavity 2-9). The process for making the left vias 2-18 and the right vias 2-17 typically uses deep silicon ion reactive etching (DRIE). The preparation process of the grooves 2-19 can adopt dry etching or wet etching.
S3, manufacturing a conductive electrode
As shown in fig. 6, a left through-hole electrode 2-8 is prepared in the left through-hole 2-18, a right through-hole electrode 2-7 is prepared in the right through-hole 2-17, a first electrode 2-4 is prepared at the lower end of the left through-hole electrode 2-8 and the lower surface of the silicon substrate 2-6, and a second electrode 2-5 is prepared at the lower end of the right through-hole electrode 2-7 and the lower surface of the silicon substrate 2-6. The left through-hole electrode 2-8, the right through-hole electrode 2-7, the first electrode 2-4 and the second electrode 2-5 are usually prepared by electroplating, and the electroplating material can be Cu, Au or Ni.
S4, filling the grooves 2-19 with a sacrificial material
As shown in fig. 7, a first sacrificial layer is deposited on the upper surface of the silicon substrate 2-6, and the first sacrificial layer covers the grooves 2-19 and the upper surface of the silicon substrate 2-6. The thickness of the first sacrificial layer is larger than the depth of the recesses 2-19. The material of the first sacrificial layer is usually borosilicate glass. The first sacrificial layer and the second sacrificial layer described below are collectively referred to as sacrificial layers 2-29.
S5, grinding the upper surfaces of the silicon substrates 2-6 to be flat
As shown in fig. 8, the upper surfaces of the silicon substrates 2 to 6 are subjected to a planarization process. Planarization is usually performed by chemical mechanical polishing. After the silicon substrates 2-6 are flattened, the left through hole electrodes 2-8 and the right through hole electrodes 2-7 are exposed on the upper surfaces of the silicon substrates 2-6, the first sacrificial layers are called second sacrificial layers after being flattened, the second sacrificial layers only exist in the grooves 2-19, and the upper surfaces of the second sacrificial layers are coplanar with the upper surfaces of the silicon substrates 2-6.
S6, preparing a bottom electrode 2-3
As shown in fig. 9, a bottom electrode 2-3 is prepared on the upper surface of the silicon substrate 2-6 and the upper surface of the second sacrificial layer after completion of S5. One end of the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the bottom electrode 2-3 covers the second sacrificial layer. The bottom electrode 2-3 is typically prepared by a magnetron sputtering process.
S7, preparing a piezoelectric layer 2-2
As shown in fig. 10, a piezoelectric layer 2-2 is prepared on the upper surface of the bottom electrode 2-3. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the groove 2-19 (i.e., the cavity 2-9 of S12) on the silicon substrate 2-6. The piezoelectric layer 2-2 is typically prepared by vapor phase chemical deposition.
S8, preparing a top electrode 2-1
As shown in fig. 11, a top electrode 2-1 is prepared on the upper surface of the piezoelectric layer 2-2. One end of the top electrode 2-1 is connected with the right through hole electrode 2-7. The top electrode 2-1 is typically prepared by a magnetron sputtering process.
S9, preparing a metal reflecting layer 3-3
As shown in fig. 12, a metal reflective layer 3-3 of surface plasmons 3 is prepared on the upper surface of the top electrode 2-1. The metal reflecting layer 3-3 is generally prepared by a sputtering or vacuum evaporation method, and the area of the metal reflecting layer 3-3 is smaller than that of the top electrode 2-1.
S10, preparing a dielectric layer 3-2
As shown in fig. 13, a dielectric layer 3-2 is prepared on the upper surface of the metal reflective layer 3-3. The dielectric layer 3-2 is generally prepared by a sputtering or vacuum evaporation process. The area of the dielectric layer 3-2 is generally smaller than or equal to the area of the metal reflecting layer 3-3, and the area of the lower surface of the dielectric layer 3-2 is smaller than or equal to the area of the upper surface of the metal reflecting layer 3-3.
S11, preparing a metal array layer 3-1
As shown in fig. 14, a metal array layer 3-1 is prepared on the upper surface of the dielectric layer 3-2, at which time surface plasmons 3 are obtained. The metal array layer 3-1 can be formed by photolithography, electron beam lithography, lift-off, or the like.
S12, etching the sacrificial layer 2-29 to obtain the cavity 2-9
As shown in fig. 15, the second sacrificial layer is released, and the cavities 2 to 9 are obtained, that is, the piezoelectric film 2 is obtained at this time, and the surface plasmons 3 are in a state of connection with the piezoelectric film 2. The cavities 2-9 can be obtained by wet etching the second sacrificial layer with an HF solution or dry etching the second sacrificial layer with gaseous HF.
S13, preparing a readout integrated circuit substrate 1
As shown in fig. 16, a readout integrated circuit substrate 1 is prepared.
S14, bonding the readout integrated circuit substrate 1 and the piezoelectric film 2
As shown in fig. 17, the piezoelectric thin film 2 is connected to the readout integrated circuit substrate 1 by bonding, and the uncooled infrared sensor is obtained. I.e. the first substrate electrode 1-1 and the first electrode 2-4 are connected and the second substrate electrode 1-2 and the second electrode 2-5 are connected. The bonding method generally adopts a metal thermocompression bonding process.
S15, packaging
As shown in fig. 18, the resulting device of S14 is packaged. The enclosing plate 4 is glued on the read integrated circuit substrate 1, the infrared window 5 is glued to the upper part of the enclosing plate 4, and the read integrated circuit substrate 1, the enclosing plate 4 and the infrared window 5 form a sealed cavity. The enclosing plate 4 can adopt a silicon wafer, a glass sheet or a ceramic packaging structure and the like. The sealed cavity can be vacuumized according to the requirements of the piezoelectric film 2 and the surface plasmon 3. The preparation is finished.
The above manufacturing method integrates the piezoelectric film 2 and the surface plasmon 3 on the readout integrated circuit substrate 1 by the MEMS micromachining method, and thus has advantages of integrated manufacturing, mass production, low cost, and the like.
Claims (6)
1. The infrared sensor based on the plasmons and the temperature frequency characteristics of the piezoelectric film comprises the piezoelectric film (2) and is characterized by further comprising a readout integrated circuit substrate (1) connected with the piezoelectric film (2) and surface plasmons (3) positioned on the upper surface of the piezoelectric film (2);
the readout integrated circuit substrate (1) comprises two substrates (1-3) and two substrate electrodes, wherein the two substrate electrodes are positioned on the upper surface of the substrate (1-3), and the substrate electrodes are connected with the substrate (1-3) and the piezoelectric film (2);
the piezoelectric film (2) comprises a silicon substrate (2-6), a cavity (2-9), a bottom electrode (2-3), a piezoelectric layer (2-2), a top electrode (2-1), a left through hole electrode (2-8), a right through hole electrode (2-7), a first electrode (2-4) and a second electrode (2-5), wherein the first electrode (2-4) and the second electrode (2-5) are located on the lower surface of the silicon substrate (2-6) and are connected with the two substrate electrodes in a one-to-one correspondence manner, the left through hole electrode (2-8) and the right through hole electrode (2-7) are located in the silicon substrate (2-6) and are connected with the first electrode (2-4) and the second electrode (2-5) in a one-to-one correspondence manner, the bottom electrode (2-3) is connected with the left through hole electrode (2-8) and is located on the silicon substrate (2-6), the cavity (2-9) is located between the silicon substrate (2-6) and the bottom electrode (2-3), the projection area of the cavity (2-9) on the silicon substrate (2-6) is smaller than the projection area of the bottom electrode (2-3) on the silicon substrate (2-6), the piezoelectric layer (2-2) is arranged on the upper surface of the bottom electrode (2-3), the top electrode (2-1) is arranged on the upper surface of the piezoelectric layer (2-2) and connected with the right through hole electrode (2-7), and the upper surface of the top electrode (2-1) is provided with the metal reflecting layer (3-3).
2. The infrared sensor based on the plasmons and the temperature frequency characteristics of the piezoelectric film according to claim 1, wherein the surface plasmons (3) comprise a metal reflection layer (3-3), a dielectric layer (3-2) and a metal array layer (3-1) which are sequentially connected from bottom to top.
3. The infrared sensor based on the plasmons and the temperature frequency characteristics of the piezoelectric film according to claim 1, wherein the projected area of the piezoelectric layer (2-2) on the silicon substrate (2-6) is larger than the projected area of the cavity (2-9) on the silicon substrate (2-6).
4. The infrared sensor based on the plasmon and piezoelectric thin film temperature frequency characteristics according to claim 1, wherein the material of the metal array layer (3-1) is Au, Ag or Al; the dielectric layer (3-2) is made of Ge or MgF2、SiO2Or AlN; the bottom electrode (2-3) and the top electrode (2-1) are made of Mo, W, Al, Pt or Ni; the piezoelectric layer (2-2) is made of AlN, ZnO or LiNbO3Or quartz; the left through hole electrodes (2-8), the right through hole electrodes (2-7), the first electrodes (2-4) and the second electrodes (2-5) are made of Au, Cu or Ni.
5. The infrared sensor based on the plasmons and the temperature frequency characteristics of the piezoelectric thin film as claimed in claim 1, wherein the infrared sensor further comprises a shroud (4) disposed on the readout integrated circuit substrate (1) and an infrared window (5) disposed on the shroud (4), the infrared window (5) is located right above the surface plasmons (3), and the readout integrated circuit substrate (1), the shroud (4) and the infrared window (5) together form a sealed cavity.
6. The plasmon-based infrared sensor based on temperature-frequency characteristics of piezoelectric thin films according to claim 1, wherein the infrared sensor further comprises a first connection layer and a second connection layer, the piezoelectric thin film (2) is connected to the surface plasmon (3) through the first connection layer, and the readout integrated circuit substrate (1) is connected to the piezoelectric thin film (2) through the second connection layer.
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