CN104030234B - The MEMS infrared sensor preparation method of based thin film bulk acoustic wave resonator - Google Patents
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Abstract
The invention discloses a kind of MEMS infrared sensor of based thin film bulk acoustic wave resonator, and preparation method thereof: comprise metal derby, piezoelectric vibration heap and acoustic reflection layer successively; Piezoelectric vibration heap and metal derby are deposited on acoustic reflection layer successively, and piezoelectric vibration heap comprises the hearth electrode, piezoelectric layer, the top electrode that are deposited on successively on acoustic reflection layer; Top electrode is positioned at infrared sensor surface and is namely called infrared window film, and its material is the conductive film with ir transmissivity, is convenient to IR and irradiates over the piezoelectric layer through top electrode; Acoustic reflection layer comprises substrate, the supporting layer of deposition on substrate and the air chamber between substrate and supporting layer; Piezoelectric vibration heap is deposited on supporting layer; In the present invention, the size of MEMS infrared sensor is less, cost of manufacture is low, preparation technology is simple, and can Reusability, and can be mass and integrated array, low cost of manufacture, be easy to same external circuit mutually compatible, without the need to refrigeration, to features such as whole infrared band are responsive.
Description
Technical field
The present invention relates to a kind of MEMS infrared sensor of based thin film bulk acoustic wave resonator, belong to microelectronics technology.
Background technology
Infrared Radiation Technology has developed into an emerging technology science in nearest more than 40 years.It, in application widely, particularly plays an important role in scientific research, military engineering and medical science.Such as at infrared guidance rocket, infrared imaging, infrared remote sensing etc.And the important tool of Infrared Radiation Technology is exactly infrared sensor, infrared sensor has played its great function in modern production practices.Especially realizing in remote temperature Detection & Controling.Infrared temperature sensor, with the performance of its excellence, meets many-sided demand, and thus in the place that product sensor is exhibited one's skill to the full, the development prospect of infrared sensor is also immeasurable.
Along with the development of science and technology, the appearance in succession of new technology, new material, new technology and new unit, people conduct in-depth research infrared optics, develop.In order to realize automation, save manpower, raise the efficiency, increase functions of the equipments, guarantee safety, protection of the environment, saving resource and the energy, infrared sensor product is had higher requirement in the technical and economic requirements such as low-power consumption, reliability, stability, low cost, miniaturization, microminiaturization, compound, standardization.The advantage of MEMS infrared sensor is the manufacturing technology of mass, and cost is low, it is integrated, low in energy consumption to be convenient to, and compared to conventional art, infrared sensor technology presents away simple function feature, towards intelligent, integrated direction development.The research of the MEMS infrared sensor of based thin film bulk acoustic wave resonator is more and more subject to people's attention.
FBAR (FBAR) is due to the little feature of its high operate frequency, high quality factor (Q value), low-temperature coefficient, high power bearing capacity, accessible site and volume, earn widespread respect in recent years, and be widely used at wireless communication field.Have multiple FBAR connection in series-parallel to form and be necessarily with radio-frequency filter that is logical or band-stop response, filter sprinkles the bandwidth of device primarily of formed single FBAR resonant frequency point decision, and filter roll-off characteristic is primarily of formed single FBAR resonance peak Q value decision.If the infrared sensor based on single FBAR has good sensing capabilities, so consisting of wave filter, oscillator, multiplexer etc. also can realize infrared sensing characteristic.So, find a kind of low-power consumption, reliable and stable, integrability the MEMS infrared sensor of based thin film bulk acoustic wave resonator can become exigence.
Although existing infrared electronic technology can meet basic sensing demand, as: infrared radiation thermometer, infrared thermoviewer, infrared human body detecting alarm, automatic door control system etc., but infrared sensor technology presents away single element, simple function feature, make to have Multifunction Sensor or integrated sensing can become the focus of each communications field research, being subject to increasing attention.FBAR has little, the reliable and stable feature of volume, and we will can prepare multiple FBAR on a wafer, and form FBAR array, each FBAR can be used to realize different sensor functions.The infrared array sensor of based thin film bulk acoustic wave resonator, can overcome the shortcoming of existing single element, simple function, to future development that is integrated, multifunction.
Infrared Detectors is divided into photon detector and thermal detector two kinds, generally the needing of photon detector works at low temperatures, and detecting band is narrower, and thermal detector due to the heating of macroscopical sample and cooling be a process slowly, therefore the response time is longer, and detectivity is low.
Summary of the invention
Object: in order to overcome the deficiencies in the prior art, the invention provides a kind of MEMS infrared sensor of based thin film bulk acoustic wave resonator,
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A MEMS infrared sensor for based thin film bulk acoustic wave resonator, is characterized in that: comprise metal derby, piezoelectric vibration heap and acoustic reflection layer successively; Described piezoelectric vibration heap and metal derby are deposited on acoustic reflection layer successively, wherein: piezoelectric vibration heap comprises the hearth electrode, piezoelectric layer, the top electrode that are deposited on successively on acoustic reflection layer; Described top electrode is positioned at infrared sensor surface and is namely called infrared window film, and its material is have the conductive film of ir transmissivity or expose the electrodes of piezoelectric membrane, is convenient to IR and irradiates over the piezoelectric layer through top electrode;
Described acoustic reflection layer comprises the supporting layer of substrate, deposition on substrate; Piezoelectric vibration heap is deposited on supporting layer; Described acoustic reflection layer is back of the body chamber etching structure, air-gap structure or Bragg reflection Rotating fields.
When described acoustic reflection layer is air-gap structure, between described substrate and supporting layer, be provided with air chamber.
Described top electrode-infrared window film is tiled configuration, up-down structure or interdigital structure.
The ir transmissivity of described top electrode-infrared window film is greater than 60% and the wave band of IR is 0.76-1000um.
The material of described hearth electrode is Al, Au, Pt, and thickness is 10-200nm.
The material of piezoelectric layer is ZnO, AlN or lead zirconate titanate (PZT), and thickness is 1um-4um.
As most preferably, the material of described piezoelectric layer be have piezo-electric effect and pyroelectric effect 95/5 PZT material.
The material of described top electrode is Graphene, and adopt the mode of chemical vapour deposition (CVD) to be formed, thickness is 6-10 atomic layer.
The metal electrode of the described very lattice-shaped of powering on, thickness is 10-100nm.
The present invention also provides the preparation method of the MEMS infrared sensor of described based thin film bulk acoustic wave resonator, comprises the following steps:
Adopt standard semi-conductor processes at the cavity of silicon chip upper surface etching 3-30 μm; Then at silicon chip surface heat growth layer of silicon dioxide film, protection silicon chip is not affected in subsequent technique process; Deposit one deck sacrificial layer material (phosphorus quartz glass PSG or titanium Ti can be selected) subsequently, and adopt chemically mechanical polishing to remove unnecessary sacrifice layer; Then Deposited By Dc Magnetron Sputtering bottom electrode, grows piezoelectric membrane by the method for sol-gel, i.e. piezoelectric layer afterwards on the bottom electrode; Chemical vapor deposition growth top electrode and graphical after make the mode plated metal block of deposited by electron beam evaporation; Finally remove sacrifice layer and form air-gap, discharge piezoelectricity sandwich structure.
Beneficial effect: the MEMS infrared sensor of based thin film bulk acoustic wave resonator provided by the invention, when on the sensitive thin film that IR is radiated at MEMS sensor, the rising of film surface temperature makes to produce electron-hole pair in piezoelectric layer, reduce the spread speed of bulk acoustic wave, thus cause whole resonator resonance point to drift about, obtaining the infrared light intensity of this pixel by measuring resonator resonance point drift size, finally realizing the imaging to infrared object.In the present invention, the size of the MEMS infrared sensor of based thin film bulk acoustic wave resonator is less, cost of manufacture is low, preparation technology is simple, and can Reusability, and can be mass and integrated array, low cost of manufacture, be easy to same external circuit mutually compatible, without the need to refrigeration, to features such as whole infrared band are responsive.Have the following advantages: the MEMS infrared sensor of (1) based thin film bulk acoustic wave resonator adopts thin film stack, compare with external resolution element or integrated micro-mechano electric system MEMS electric capacity, device size can be reduced, reduce costs, simultaneously the advantage such as its volume little, frequency is high, performance good, accessible site can reach the frequency of radio circuit requirement, its preparation technology is relatively simple, can all at Reusability.(2) the MEMS infrared sensor of based thin film bulk acoustic wave resonator can work under LVPS, the wave-length coverage of its detection is completely in ultraviolet spectra district, there is higher sensitivity, high response characteristics to light, and antijamming capability strong, the reliable and stable life-span is long, little power consumption.
Accompanying drawing explanation
Fig. 1 is the profile of the thin-film body resonator adopting back of the body chamber etching knot in the present invention;
Fig. 2 is the IRDS based on FBAR device in the present invention;
Fig. 3 is the array of film bulk acoustic resonator point in the present invention;
Fig. 4 is the graph of a relation picture that the ultrared intensity of the present invention and detector FBAR frequency band offset.
In figure: metal derby 101, top electrode 102, piezoelectric layer 103, hearth electrode 104, supporting layer 105, air chamber 106, substrate 107, electric oscillation heap 108, acoustic reflection layer 109.
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.Following instance is only for clearly illustrating technical scheme of the present invention.
1. the preparation of the MEMS infrared sensor of based thin film bulk acoustic wave resonator
Shown in Fig. 1, in the present invention for infrared acquisition FBAR FBAR comprise metal derby 101, piezoelectric vibration heap 108 and under acoustic reflecting layer 109.Wherein, piezoelectric vibration heap 108 comprises hearth electrode 104, piezoelectric layer 103, top electrode 102; Acoustic reflection layer 109 comprises substrate 107, supporting layer 105 and air chamber 106.
FBAR vibration mode can be shear wave modes, transverse mode or both mixed modes, and different vibration modes corresponds to distribution of electrodes structure and is respectively tiled configuration, up-down structure and interdigital structure; What adopt in the present embodiment is that up-down structure is described.
The piezoelectric layer 103 of the MEMS infrared sensor based on FBAR in Fig. 1 can use ZnO, AlN or PZT material, and its thickness is between 1-4um, adopts the PZT material with piezo-electric effect and pyroelectric effect as piezoelectric layer in the present embodiment.The performances such as the high-curie temperature of PZT, high figure of merit, low thermal diffusivity coefficient become the pyroelectricity material of the red focal plane array device of development uncooled ir.
In Fig. 1, power on level 102 and metal derby 101 of FBAR also can use the metal electrode of lattice-shaped, and the metal electrode of lattice-shaped makes piezoelectric layer 103 have the PZT material of part to be directly exposed in air, such infrared ray can between be radiated at the surface of PZT material.
In Fig. 1, infrared window is namely based on the top electrode 102 of the MEMS infrared sensor of FBAR, the sensitivity of ultrared transmissivity on device of upper electrode film has larger impact, select Graphene as upper electrode material in the present embodiment, Graphene is a kind of single layer structure be made up of carbon atom, the infrared ray of whole spectrum can be detected, and it has good chemical stability, the erosion of air or chemical substance can be avoided.
The acoustic reflection layer of the MEMS infrared sensor of based thin film bulk acoustic wave resonator adopts air chamber structure in the present embodiment.In the present embodiment, the preparation process of MEMS infrared sensor adopts deep reaction ion etching (DeepRIE) at the cavity of silicon chip upper surface etching 3-30 μm; Then using plasma strengthens the method for chemical vapour deposition (CVD) at silicon chip surface heat growth layer of silicon dioxide film, and as the supporting layer of device, its thickness is 300nm; Deposit one deck sacrificial layer material (phosphorus quartz glass PSG or titanium Ti can be selected) subsequently, and use chemically mechanical polishing method remove unnecessary sacrifice layer; Use positive glue to peel off (lift-off) technique subsequently and exposure imaging is carried out to front side of silicon wafer (burnishing surface), and adopt the mode of electron beam evaporation to deposit the Au of Cr, 50nm of 5nm as hearth electrode 104, peel off rear formation hearth electrode shape.Then the PZT piezoelectric layer 103 piezoelectric ceramics film of sol-gel Sol-gel method growth about 2um is used.Subsequently liner is placed in quick anneal oven, the condition of annealing is normal pressure 400 DEG C, 10min, after completing first time annealing, PZT is etched through hole; Then use chemical vapor deposition (CVD) deposition 6-10 layer graphene and use the method for inductively coupled plasma to etch top electrode 102; Use the metal derby 101 of the processing step deposition 100nm identical with hearth electrode thereupon; Finally go substrate to be placed in acetone soln and form air chamber 106 except sacrifice layer, discharge piezoelectricity sandwich structure.
2. the assembling of infrared detector
Use silver slurry to dry contact conductor in the present embodiment, the metal derby silver slurry extraction electrode lead-in wire of described formation, on the electrode lead hole of film, then fill silver slurry, then wire is placed on silver slurry, in drying in oven, baking condition is 150 DEG C/1h.It should be noted that silver slurry can not again in air standing time long.The substrate welded is placed in the pcb board for testing, and with silver slurry, the other end of contact conductor is welded.
3. based on the infrared acquisition of FBAR
Fig. 2 is the IRDS of FBAR device, and in the present embodiment, the model of Network Analyzer is Agilent8714ET, and it is for showing the resonance curve of FBAR device, and the change of its resonance peak uses Labview software Real-Time Monitoring.
4. the MEMS infrared array sensor of based thin film bulk acoustic wave resonator
Fig. 3 is the array of the MEMS infrared sensor of based thin film bulk acoustic wave resonator, FBAR is because having little, the reliable and stable feature of volume, to can prepare multiple FBAR on a wafer, form FBAR array, each FBAR can be used to realize different sensor functions.The infrared array sensor of based thin film bulk acoustic wave resonator, can overcome the shortcoming of existing single element, simple function, to future development that is integrated, multifunction.
Fig. 4 is the frequency shift (FS) of the MEMS infrared sensor of based thin film bulk acoustic wave resonator and the relation of infrared ray light intensity.
In the present invention the MEMS Infrared Detectors of based thin film bulk acoustic wave resonator have that volume is little, resolution ratio is high, can be mass and integrated array, low cost of manufacture, be easy to same external circuit mutually compatible, without the need to refrigeration, to features such as whole infrared band are responsive, compensate for the deficiency of general Bolometer part and light quantity subtype sensitive detection parts, thus be applicable to be subject to the restriction of power consumption, volume and refrigerating capacity, require to have the fields such as the guidance of excellent performance, satellite reconaissance and space technology simultaneously.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. a MEMS infrared sensor for based thin film bulk acoustic wave resonator, is characterized in that: comprise metal derby, piezoelectric vibration heap and acoustic reflection layer successively; Described piezoelectric vibration heap and metal derby are deposited on acoustic reflection layer successively, wherein: piezoelectric vibration heap comprises the hearth electrode, piezoelectric layer, the top electrode that are deposited on successively on acoustic reflection layer; Described top electrode is positioned at infrared sensor surface and is namely called infrared window film, and its material is have the conductive film of ir transmissivity or expose the electrodes of piezoelectric membrane, is convenient to IR and irradiates over the piezoelectric layer through top electrode;
Described acoustic reflection layer comprises the supporting layer of substrate, deposition on substrate; Piezoelectric vibration heap is deposited on supporting layer; Described acoustic reflection layer is back of the body chamber etching structure, air-gap structure or Bragg reflection Rotating fields;
The ir transmissivity of described top electrode is greater than 60% and the wave band of IR is 0.76-1000um;
The material of described top electrode is Graphene, and adopt the mode of chemical vapour deposition (CVD) to be formed, thickness is 6-10 atomic layer.
2. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: when described acoustic reflection layer is air-gap structure, be provided with air chamber between described substrate and supporting layer.
3. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: described in power on very tiled configuration, up-down structure or interdigital structure.
4. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of described hearth electrode is Al, Au, Pt, and thickness is 10-200nm.
5. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of piezoelectric layer is ZnO, AlN or lead zirconate titanate (PZT), and thickness is 1um-4um.
6. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of described piezoelectric layer be have piezo-electric effect and pyroelectric effect 95/5 PZT material.
7. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: described in power on the metal electrode of very lattice-shaped, thickness is 10-100nm.
8. the preparation method of the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 2, comprises the following steps: adopt standard semi-conductor processes at the cavity of silicon chip upper surface etching 3-30 μm; Then at silicon chip surface heat growth layer of silicon dioxide film, protection silicon chip is not affected in subsequent technique process; Deposit one deck sacrificial layer material subsequently, and adopt chemically mechanical polishing to remove unnecessary sacrifice layer; Then Deposited By Dc Magnetron Sputtering bottom electrode, grows piezoelectric membrane by the method for sol-gel, i.e. piezoelectric layer afterwards on the bottom electrode; Chemical vapor deposition growth top electrode and graphical after make the mode plated metal block of deposited by electron beam evaporation; Finally remove sacrifice layer and form air-gap, discharge piezoelectricity sandwich structure.
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