CN104030234A - MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor - Google Patents
MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor Download PDFInfo
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Abstract
The invention discloses an MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and a preparation method of the MEMS infrared sensor. The MEMS infrared sensor sequentially comprises a metal block, a piezoelectric oscillation pile and an acoustic wave reflection layer, wherein the piezoelectric oscillation pile and the metal block are sequentially deposited on the acoustic wave reflection layer; the piezoelectric oscillation pile comprises a bottom electrode, a piezoelectric layer and an upper electrode which are sequentially deposited on the acoustic wave reflection layer; the upper electrode is arranged on the surface of the infrared sensor and called as an infrared window film; the material of the infrared window film is a conductive film with infrared transmittance rate, so that infrared light irradiates the piezoelectric layer by transmitting the upper electrode; the acoustic wave reflection layer comprises a substrate, a support layer and an air cavity; the support layer is deposited on the substrate; the air cavity is formed between the substrate and the support layer; the piezoelectric oscillation pile is deposited on the support layer. The MEMS infrared sensor is small in size, low in production cost and simple in preparation process; the MEMS infrared sensor can be repeatedly used and is capable being produced in batches and integrating arrays, low in production cost, easily compatible with external circuits, free of refrigeration and sensitive to the overall infrared wave band.
Description
Technical field
The MEMS infrared sensor that the present invention relates to a kind of based thin film bulk acoustic wave resonator, belongs to microelectronics technology.
Background technology
Infrared Radiation Technology has developed into an emerging technology science in nearest more than 40 years.It,, in application widely, is particularly playing an important role aspect scientific research, military engineering and medical science.For example, at infrared guidance rocket, infrared imaging, infrared remote sensing etc.And the important tool of Infrared Radiation Technology is exactly infrared sensor, infrared sensor has been brought into play its great function in modern production practices.Especially realizing aspect remote temperature Detection & Controling.Infrared temperature sensor, with its excellent performance, has met many-sided demand, thereby the place of exhibiting one's skill to the full at product sensor, and the development prospect of infrared sensor is also immeasurable.
Along with scientific and technical development, the appearance in succession of new technology, new material, new technology and new unit, people conduct in-depth research, develop infrared optics.In order to realize automation, save manpower, raise the efficiency, increase functions of the equipments, guarantee safety, protection of the environment, saving resource and the energy, infrared sensor product is being had higher requirement aspect the technical and economic requirements such as low-power consumption, reliability, stability, low cost, miniaturization, microminiaturization, compound, standardization.The advantage of MEMS infrared sensor is the manufacturing technology of mass, and cost is low, it is integrated, low in energy consumption to be convenient to, and than conventional art, infrared sensor technology presents away simple function feature, towards intelligent, integrated direction development.The research of the MEMS infrared sensor of based thin film bulk acoustic wave resonator is more and more subject to people's attention.
FBAR (FBAR) due to its high operate frequency, high quality factor (Q value), low-temperature coefficient, high power bearing capacity, can be integrated and feature that volume is little, earn widespread respect in recent years, and be widely used at wireless communication field.Have multiple FBAR connection in series-parallel can form certain band and lead to or be with the radio-frequency filter that hinders characteristic, the bandwidth that device is sprinkled in filter mainly to be determined by formed single FBAR resonant frequency point, filter roll-off characteristic is mainly by formed single FBAR resonance peak Q value decision.If the infrared sensor based on single FBAR has good sensing capabilities, so consisting of wave filter, oscillator, multiplexer etc. also can realize infrared sensing characteristic.So, find a kind of low-power consumption, reliable and stable, integrability can based thin film bulk acoustic wave resonator MEMS infrared sensor become exigence.
Although existing infrared electronic technology can meet basic sensing demand, as: infrared radiation thermometer, infrared thermoviewer, infrared human body detecting alarm, automatic door control system etc., but infrared sensor technology presents away single element, simple function feature, make to have Multifunction Sensor or can integrated sensing become the focus that each communications field is studied, be subject to increasing attention.FBAR has little, the reliable and stable feature of volume, and we can will prepare multiple FBAR on a wafer, forms FBAR array, and each FBAR can be used to realize different sensor functions.The infrared array sensor of based thin film bulk acoustic wave resonator, can overcome the shortcoming of existing single element, simple function, to future development integrated, multifunction.
Infrared Detectors is divided into two kinds of photon detector and thermal detectors, generally need to working at low temperatures of photon detector, detecting band is narrower, and thermal detector due to the heating of macroscopical sample and cooling be a process slowly, therefore the response time longer, detectivity is low.
Summary of the invention
Object: in order to overcome the deficiencies in the prior art, the invention provides a kind of MEMS infrared sensor of based thin film bulk acoustic wave resonator,
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A MEMS infrared sensor for based thin film bulk acoustic wave resonator, is characterized in that: comprise successively metal derby, piezoelectric vibration heap and acoustic reflection layer; Described piezoelectric vibration heap and metal derby are deposited on acoustic reflection layer, wherein successively: piezoelectric vibration heap comprises the hearth electrode, piezoelectric layer, the top electrode that are deposited on successively on acoustic reflection layer; Described top electrode is positioned at infrared sensor surface and is called infrared window film, and its material is the lattice-shaped electrode that has the conductive film of ir transmissivity or expose piezoelectric membrane, is convenient to IR and is radiated on piezoelectric layer through top electrode;
Described acoustic reflection layer comprises the supporting layer depositing on substrate, substrate; Piezoelectric vibration heap is deposited on supporting layer; Described acoustic reflection layer is back of the body chamber etching structure, air-gap structure or Bragg reflecting layer structure.
In the time that described acoustic reflection layer is air-gap structure, between described substrate and supporting layer, be provided with air chamber.
Described top electrode-infrared window film is left and right structure, up-down structure or interdigital structure.
The ir transmissivity of described top electrode-infrared window film be greater than 60% and the wave band of IR be 0.76-1000um.
The material of described hearth electrode is Al, Au, Pt, and thickness is 10-200nm.
The material of piezoelectric layer is ZnO, AlN or lead zirconate titanate (PZT), and thickness is 1um-4um.
As most preferably, the material of described piezoelectric layer is 95/5 the PZT material with piezo-electric effect and pyroelectric effect.
The material of described top electrode is Graphene, adopts the mode of chemical vapour deposition (CVD) to form, and thickness is 6-10 atomic layer.
The described very metal electrode of lattice-shaped that powers on, thickness is 10-100nm.
The preparation method of the MEMS infrared sensor of the based thin film bulk acoustic wave resonator described in the present invention also provides, comprises the following steps:
Adopt the cavity of standard semiconductor technique at silicon chip upper surface etching 3-30 μ m; Then at silicon chip surface heat growth layer of silicon dioxide film, protection silicon chip is not affected in subsequent technique process; Deposit one deck sacrificial layer material (can select phosphorus quartz glass PSG or titanium Ti) subsequently, and adopt chemically mechanical polishing to remove unnecessary sacrifice layer; Then Deposited By Dc Magnetron Sputtering bottom electrode, afterwards with the method for sol-gel grow on bottom electrode piezoelectric membrane, i.e. piezoelectric layer; Chemical vapor deposition growth top electrode and graphical after make the mode plated metal piece of deposited by electron beam evaporation; Finally remove sacrifice layer and form air-gap, discharge piezoelectricity sandwich structure.
Beneficial effect: the MEMS infrared sensor of based thin film bulk acoustic wave resonator provided by the invention, in the time that IR is radiated on the sensitive thin film of MEMS sensor, the rising of film surface temperature makes generation electron-hole pair in piezoelectric layer, reduce the spread speed of bulk acoustic wave, thereby cause whole resonator resonance point drift, the infrared light intensity that obtains this pixel by measuring resonator resonance point drift size, finally realizes the imaging to infrared object.In the present invention, the size of the MEMS infrared sensor of based thin film bulk acoustic wave resonator is less, cost of manufacture is low, preparation technology is simple, and can Reusability, and can be mass and integrated array, low cost of manufacture, be easy to same external circuit mutually compatible, without refrigeration, to features such as whole infrared band sensitivities.Have the following advantages: the MEMS infrared sensor of (1) based thin film bulk acoustic wave resonator adopts stacks of thin films structure, compare with external resolution element or integrated micro-mechano electric system MEMS electric capacity, can reduce device size, reduce costs, simultaneously its volume is little, frequency is high, performance good, can be integrated etc. advantage can reach the frequency of radio circuit requirement, its preparation technology is relatively simple, can be all at Reusability.(2) the MEMS infrared sensor of based thin film bulk acoustic wave resonator can be worked under LVPS, the wave-length coverage of its detection is completely in ultraviolet spectra district, there is higher sensitivity, high response characteristics to light, and strong, the reliable and stable life-span of antijamming capability is long, little power consumption.
Brief description of the drawings
Fig. 1 is the profile that adopts the thin-film body resonator of back of the body chamber etching knot in the present invention;
Fig. 2 is the IRDS based on FBAR device in the present invention;
Fig. 3 is the array of film bulk acoustic resonator point in the present invention;
Fig. 4 is the graph of a relation picture of the ultrared intensity of the present invention and the skew of detector FBAR frequency band.
In figure: metal derby 101, top electrode 102, piezoelectric layer 103, hearth electrode 104, supporting layer 105, air chamber 106, substrate 107, electric oscillation heap 108, acoustic reflection layer 109.
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.Following instance is only for more clearly illustrating technical scheme of the present invention.
1. the preparation of the MEMS infrared sensor of based thin film bulk acoustic wave resonator
Shown in Fig. 1, in the present invention for infrared acquisition FBAR FBAR comprise metal derby 101, piezoelectric vibration heap 108 and under acoustic reflecting layer 109.Wherein, piezoelectric vibration heap 108 comprises hearth electrode 104, piezoelectric layer 103, top electrode 102; Acoustic reflection layer 109 comprises substrate 107, supporting layer 105 and air chamber 106.
FBAR vibration mode can be shear wave modes, shear wave pattern or both mixed modes, and different vibration modes is respectively left and right structure, up-down structure and interdigital structure corresponding to distribution of electrodes structure; What in the present embodiment, adopt is that up-down structure describes.
The piezoelectric layer 103 of the MEMS infrared sensor based on FBAR in Fig. 1 can use ZnO, AlN or PZT material, and its thickness is between 1-4um, adopts the PZT material with piezo-electric effect and pyroelectric effect as piezoelectric layer in the present embodiment.The performances such as the high-curie temperature of PZT, high figure of merit, low thermal diffusion coefficient become the pyroelectricity material of the red focal plane array device of development uncooled ir.
In Fig. 1, power on level 102 and metal derby 101 of FBAR also can use the metal electrode of lattice-shaped, the metal electrode of lattice-shaped to make piezoelectric layer 103 have the PZT material of part to be directly exposed in air, like this infrared ray can between be radiated at the surface of PZT material.
The i.e. top electrode 102 of the MEMS infrared sensor based on FBAR of infrared window in Fig. 1, the ultrared transmissivity of upper electrode film has larger impact to the sensitivity of device, in the present embodiment, select Graphene as upper electrode material, Graphene is a kind of single layer structure being made up of carbon atom, can detect the infrared ray of whole spectrum, and it has good chemical stability, can avoid the erosion of atmosphere or chemical substance.
The acoustic reflection layer of the MEMS infrared sensor of based thin film bulk acoustic wave resonator adopts air chamber structure in the present embodiment.In the present embodiment, the preparation process of MEMS infrared sensor is to adopt the cavity of deep reaction ion etching (DeepRIE) at silicon chip upper surface etching 3-30 μ m; Then the method that using plasma strengthens chemical vapour deposition (CVD) is at silicon chip surface heat growth layer of silicon dioxide film, and as the supporting layer of device, its thickness is 300nm; Deposit one deck sacrificial layer material (can select phosphorus quartz glass PSG or titanium Ti) subsequently, and use chemically mechanical polishing method remove unnecessary sacrifice layer; Use subsequently positive glue to peel off (lift-off) technique front side of silicon wafer (burnishing surface) is carried out to exposure imaging, and adopt the Au of Cr, 50nm that the mode of electron beam evaporation deposits 5nm as hearth electrode 104, peeled off rear formation hearth electrode shape.Then use the PZT piezoelectric layer 103 piezoelectric ceramics films of sol-gel Sol-gel method growth 2um left and right.Subsequently liner is placed in to quick anneal oven, the condition of annealing is 400 DEG C of normal pressures, and 10min completes for the first time, after annealing, PZT etched to through hole; Then use chemical vapor deposition (CVD) deposition 6-10 layer graphene and use the method for inductively coupled plasma to etch top electrode 102; Use the metal derby 101 of the processing step deposition 100nm identical with hearth electrode thereupon; Finally go substrate to be placed in acetone soln except sacrifice layer forms air chamber 106, discharge piezoelectricity sandwich structure.
2. the assembling of infrared detector
In the present embodiment, use silver slurry to dry contact conductor, silver slurry extraction electrode lead-in wire for the metal derby of described formation then fills silver slurry on the electrode lead hole of film, then wire is placed on to silver slurry upper, and in drying in oven, baking condition is 150 DEG C/1h.Be noted that silver-colored slurry again in air standing time long.The substrate having welded is placed in to the pcb board for testing, and starches the other end of contact conductor is welded with silver.
Based on the infrared acquisition of FBAR
Fig. 2 is the IRDS of FBAR device, and in the present embodiment, the model of Network Analyzer is Agilent 8714ET, and it is for showing the resonance curve of FBAR device, and the variation of its resonance peak is used Labview software Real-Time Monitoring.
4. the MEMS infrared array sensor of based thin film bulk acoustic wave resonator
Fig. 3 is the array of the MEMS infrared sensor of based thin film bulk acoustic wave resonator, FBAR is because having little, the reliable and stable feature of volume, can will on a wafer, prepare multiple FBAR, form FBAR array, each FBAR can be used to realize different sensor functions.The infrared array sensor of based thin film bulk acoustic wave resonator, can overcome the shortcoming of existing single element, simple function, to future development integrated, multifunction.
Fig. 4 is the frequency shift (FS) of MEMS infrared sensor and the relation of infrared ray light intensity of based thin film bulk acoustic wave resonator.
In the present invention the MEMS Infrared Detectors of based thin film bulk acoustic wave resonator have that volume is little, resolution ratio is high, can be mass and integrated array, low cost of manufacture, be easy to same external circuit mutually compatible, without refrigeration, to features such as whole infrared band sensitivities, make up the deficiency of general Bolometer part and light quantity subtype sensitive detection parts, thereby being applicable to be subject to power consumption, volume and refrigerating capacity restriction, requirement simultaneously has the fields such as guidance, satellite reconaissance and the space technology of excellent performance.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a MEMS infrared sensor for based thin film bulk acoustic wave resonator, is characterized in that: comprise successively metal derby, piezoelectric vibration heap and acoustic reflection layer; Described piezoelectric vibration heap and metal derby are deposited on acoustic reflection layer, wherein successively: piezoelectric vibration heap comprises the hearth electrode, piezoelectric layer, the top electrode that are deposited on successively on acoustic reflection layer; Described top electrode is positioned at infrared sensor surface and is called infrared window film, and its material is the lattice-shaped electrode that has the conductive film of ir transmissivity or expose piezoelectric membrane, is convenient to IR and is radiated on piezoelectric layer through top electrode;
Described acoustic reflection layer comprises the supporting layer depositing on substrate, substrate; Piezoelectric vibration heap is deposited on supporting layer; Described acoustic reflection layer is back of the body chamber etching structure, air-gap structure or Bragg reflecting layer structure.
2. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: in the time that described acoustic reflection layer is air-gap structure, between described substrate and supporting layer, be provided with air chamber.
3. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: described top electrode-infrared window film is left and right structure, up-down structure or interdigital structure.
4. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the ir transmissivity of described top electrode-infrared window film be greater than 60% and the wave band of IR be 0.76-1000um.
5. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of described hearth electrode is Al, Au, Pt, and thickness is 10-200nm.
6. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of piezoelectric layer is ZnO, AlN or lead zirconate titanate (PZT), and thickness is 1um-4um.
7. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of described piezoelectric layer is 95/5 the PZT material with piezo-electric effect and pyroelectric effect.
8. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: the material of described top electrode is Graphene, adopts the mode of chemical vapour deposition (CVD) to form, and thickness is 6-10 atomic layer.
9. the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 1, is characterized in that: described in the very metal electrode of lattice-shaped that powers on, thickness is 10-100nm.
10. the preparation method of the MEMS infrared sensor of based thin film bulk acoustic wave resonator according to claim 2, comprises the following steps: adopt the cavity of standard semiconductor technique at silicon chip upper surface etching 3-30 μ m; Then at silicon chip surface heat growth layer of silicon dioxide film, protection silicon chip is not affected in subsequent technique process; Deposit one deck sacrificial layer material subsequently, and adopt chemically mechanical polishing to remove unnecessary sacrifice layer; Then Deposited By Dc Magnetron Sputtering bottom electrode, afterwards with the method for sol-gel grow on bottom electrode piezoelectric membrane, i.e. piezoelectric layer; Chemical vapor deposition growth top electrode and graphical after make the mode plated metal piece of deposited by electron beam evaporation; Finally remove sacrifice layer and form air-gap, discharge piezoelectricity sandwich structure.
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| CN109708766A (en) * | 2019-01-02 | 2019-05-03 | 华南理工大学 | A kind of detector and its manufacturing method using acoustic resonator and carbon nanotube |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| CN113767063A (en) * | 2019-04-01 | 2021-12-07 | 迈瑞迪创新科技有限公司 | Heterogeneous integration of complementary metal oxide semiconductor and MEMS sensors |
| CN110690871A (en) * | 2019-09-20 | 2020-01-14 | 中国科学院长春光学精密机械与物理研究所 | Film bulk acoustic resonator with heat insulation structure and preparation method thereof |
| CN111442849A (en) * | 2020-03-20 | 2020-07-24 | 天津大学 | Manufacturing method of miniature near-infrared detector and miniature near-infrared detector |
| CN111650631A (en) * | 2020-05-22 | 2020-09-11 | 苏州研材微纳科技有限公司 | Method for assembling wire mesh in multi-wire proportional counter |
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