CN109321975B - Monocrystalline silicon directional solidification seeding module - Google Patents
Monocrystalline silicon directional solidification seeding module Download PDFInfo
- Publication number
- CN109321975B CN109321975B CN201811378218.5A CN201811378218A CN109321975B CN 109321975 B CN109321975 B CN 109321975B CN 201811378218 A CN201811378218 A CN 201811378218A CN 109321975 B CN109321975 B CN 109321975B
- Authority
- CN
- China
- Prior art keywords
- crucible
- hole
- graphite heat
- directional solidification
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a directional solidification seeding module for monocrystalline silicon, which comprises a first crucible and a second crucible, wherein the second crucible is sleeved in the first crucible, and seed crystals are arranged at the bottom in the second crucible; the external diameter of second crucible is less than the internal diameter of first crucible, is equipped with graphite heat preservation braid at the annular chamber between first crucible and second crucible, graphite heat preservation braid is the open tubular structure in axial both ends, and graphite heat preservation braid's axial one end is passed through the connecting piece and is fixed on the top of annular cavity, the axial other end hangs down naturally in annular cavity bottom under the action of gravity. The invention can effectively prevent the liquid silicon raw material from nucleating and crystallizing on the side wall of the first crucible, and is beneficial to obtaining high-quality monocrystalline silicon products.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon, in particular to a directional solidification seeding module for monocrystalline silicon.
Background
Silicon single crystal and silicon multicrystalline ingots are the most commonly used materials for crystalline silicon solar cells. In general, a solar cell manufactured using a silicon single crystal material has higher photoelectric conversion efficiency than a solar cell manufactured using a silicon polycrystalline material. Currently, the most commonly used methods for producing a silicon single crystal include a Czochralski method and a float Zone method; the method for producing polycrystalline silicon generally employs a directional solidification method (i.e., a casting method). The directional solidification method is to place a silicon raw material in a crucible in a polycrystal ingot furnace, and directionally crystallize the silicon raw material from bottom to top by changing a temperature field to form silicon polycrystal.
At present, silicon crystals grown by a directional solidification method are usually polycrystalline silicon and cannot obtain silicon single crystals, and the main reason is that the initial process of the directional solidification is not guided by seed crystals with a specific crystal orientation, and the solidification usually starts from the wall surface of a quartz crucible, a plurality of solidification cores are spontaneously formed and grow gradually, so that the finally formed crystals are polycrystalline and not single crystals. Therefore, the growth of a silicon single crystal by the directional solidification method is required to satisfy specific conditions, of which the most important is that a seeding process is completed by using a seed crystal at the start of solidification.
In the process of growing the monocrystalline silicon by adopting the directional solidification, the temperature field of the growth environment of the monocrystalline silicon is difficult to control, and the liquid silicon raw material is easy to nucleate and crystallize on the inner wall of the crucible in the directional solidification process to form a polycrystalline silicon structure.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in the process of growing the monocrystalline silicon by adopting the directional solidification, the temperature field of the growth environment of the monocrystalline silicon is difficult to control, and the liquid silicon raw material is easy to nucleate and crystallize on the inner wall of the crucible in the directional solidification process to form a polycrystalline silicon knot.
The invention is realized by the following technical scheme:
the directional solidification seeding module for the monocrystalline silicon comprises a first crucible and a second crucible, wherein the second crucible is sleeved in the first crucible, a mounting hole is formed in the geometric center of the bottom in the second crucible, and a fixing piece for clamping seed crystals is detachably connected in the mounting hole;
the external diameter of second crucible is less than the internal diameter of first crucible, is equipped with graphite heat preservation braid at the annular chamber between first crucible and second crucible, graphite heat preservation braid is the open tubular structure in axial both ends, and graphite heat preservation braid's axial one end is passed through the connecting piece and is fixed on the top of annular cavity, the axial other end hangs down naturally in annular cavity bottom under the action of gravity.
The working principle of the invention is as follows: when the crucible is used, the second crucible is sleeved in the first crucible to ensure that the axial leads of the first crucible and the second crucible are superposed, then the graphite heat-insulating woven sleeve is placed in the annular chamber between the first crucible and the second crucible, the end part of the graphite heat-insulating woven sleeve is fixed at the top parts of the first crucible and the second crucible through the connecting piece, so that the whole graphite heat-insulating woven sleeve is suspended in the annular chamber between the first crucible and the second crucible under the action of self gravity, and an air heat-insulating layer, a graphite heat-insulating woven sleeve heat-insulating layer and an air heat-insulating layer are sequentially arranged between the outer wall of the second crucible and the inner wall of the first crucible, so that a good heat-insulating effect is formed on the first crucible; in addition, the seed crystal is firstly installed on the fixing piece, and then the fixing piece is detachably connected and arranged in the installation hole, so that the disassembly and assembly operation is convenient; in the process of pouring the melted liquid silicon material into the second crucible for directional solidification and growth of the monocrystalline silicon, the liquid silicon material can be effectively prevented from nucleating and crystallizing on the side wall of the first crucible, and the method is favorable for obtaining a high-quality monocrystalline silicon product.
Preferably, the connecting piece is of an annular plate structure, the inner diameter of the annular plate is equal to that of the second crucible, and the outer diameter of the annular plate is equal to that of the first crucible; the open end of one end of the graphite heat-insulating woven sleeve is fixed on the lower plate surface of the annular plate.
Adopt the fixed graphite heat preservation of annular plate to knit the cover, simple structure, convenient operation because, the internal diameter of annular plate equals with the internal diameter of second crucible, and the external diameter of annular plate equals with the external diameter of first crucible, can play good fixed effect of hanging to graphite heat preservation and knit the cover, prevents that graphite heat preservation from knit the cover and wholly falls into the annular chamber between first crucible and the second crucible indoor.
Preferably, the lower plate surface of the annular plate is also provided with a first positioning ring and a second positioning ring in a protruding mode along the circumferential direction; the top end face of the first crucible is circumferentially provided with a first positioning groove matched with the first positioning ring, and the top end face of the second crucible is circumferentially provided with a second positioning groove matched with the second positioning ring.
Through set up first holding ring and second holding ring on the annular plate correspond with the embedded adaptation of first constant head tank and second constant head tank, the firm fixed of guarantee annular plate at prevents that in the use, the annular plate removes, influences the heat retaining homogeneity of first crucible.
Preferably, the annular plate is provided with a lifting ring on the upper plate surface.
Through setting up the lift ring, conveniently lift by crane or transfer the operation with graphite insulation braid.
Preferably, the axial bottom end of the graphite heat-insulating woven sleeve is provided with a counterweight ring.
Through set up the counter weight ring in graphite heat preservation braid bottom, increase the flagging gravity of graphite heat preservation braid bottom, guarantee graphite heat preservation braid is indoor normally to be extended out in the annular chamber, prevents that graphite heat preservation braid from taking place to fold or pile up, influences the heat preservation effect.
Preferably, the fixing part is of a cylindrical structure with one open end and one closed end, and the seed crystal is inserted into the cylindrical structure for fixing; the outer wall of the open end of the top of the tubular structure is fitted with a contraceptive ring and is equipped with a limiting plate, a through hole has been seted up on the limiting plate, the bottom surface of the second crucible, and be located mounting hole outer fringe department be equipped with the screw hole of through-hole adaptation runs through the graphite pin through-hole, screw in threaded hole internal fixation.
Specifically, the mounting adopts tubular structure, and the seed crystal inserts tubular structure internal fixation, and tubular structure passes through graphite to be fixed in the mounting hole slightly nailed, can select the tubular structure of different internal diameters according to the size of seed crystal like this, guarantee tubular structure external diameter all the time with the mounting hole adaptation can, the operation is comparatively nimble.
Preferably, the side wall of the cylindrical structure is provided with a threaded through hole, the axis of the threaded through hole is perpendicular to the axis direction of the cylindrical structure, and graphite nails are screwed into the threaded through hole to tightly press and fix seed crystals in the cylindrical structure.
Preferably, a positioning column is convexly arranged at the geometric center of the bottom in the first crucible, and a positioning hole matched with the positioning column is concavely arranged at the outer bottom of the second crucible.
The seed crystal is fixed in the cylindrical structure to prevent the seed crystal from floating upwards.
The invention has the following advantages and beneficial effects:
1. the working principle of the invention is as follows: when the crucible is used, the second crucible is sleeved in the first crucible to ensure that the axial leads of the first crucible and the second crucible are superposed, then the graphite heat-insulating woven sleeve is placed in the annular chamber between the first crucible and the second crucible, the end part of the graphite heat-insulating woven sleeve is fixed at the top parts of the first crucible and the second crucible through the connecting piece, so that the whole graphite heat-insulating woven sleeve is suspended in the annular chamber between the first crucible and the second crucible under the action of self gravity, and an air heat-insulating layer, a graphite heat-insulating woven sleeve heat-insulating layer and an air heat-insulating layer are sequentially arranged between the outer wall of the second crucible and the inner wall of the first crucible, so that a good heat-insulating effect is formed on the first crucible; in the process of pouring the melted liquid silicon material into the second crucible for directional solidification and growth of the monocrystalline silicon, the liquid silicon material can be effectively prevented from nucleating and crystallizing on the side wall of the first crucible, and the high-quality monocrystalline silicon product can be obtained; the method is suitable for directional solidification by adopting heat exchange methods such as cooling water copper plate cooling or air cooling;
2. the graphite heat-insulating fabric sleeve is fixed by the annular plate, so that the structure is simple, the operation is convenient, and the graphite heat-insulating fabric sleeve can be well fixed and suspended to prevent the whole graphite heat-insulating fabric sleeve from falling into an annular chamber between the first crucible and the second crucible because the inner diameter of the annular plate is equal to the inner diameter of the second crucible and the outer diameter of the annular plate is equal to the outer diameter of the first crucible. The first positioning ring and the second positioning ring are correspondingly matched with the first positioning groove and the second positioning groove in an embedded manner, so that the annular plate is ensured to be stably fixed, and the phenomenon that the annular plate moves to influence the heat preservation uniformity of the first crucible in the use process is prevented; the weight-balancing ring is arranged at the bottom of the graphite heat-insulating woven sleeve, so that the drooping gravity at the bottom of the graphite heat-insulating woven sleeve is increased, the graphite heat-insulating woven sleeve is ensured to normally extend in the annular chamber, and the graphite heat-insulating woven sleeve is prevented from being folded or stacked to influence the heat-insulating effect;
3. according to the invention, firstly, the seed crystal is arranged on the fixing piece, and then the fixing piece is detachably connected and arranged in the mounting hole, so that the disassembly and assembly operation is convenient; specifically, the mounting adopts tubular structure, and the seed crystal inserts tubular structure internal fixation, and tubular structure passes through graphite to be fixed in the mounting hole slightly nailed, can select the tubular structure of different internal diameters according to the size of seed crystal like this, guarantee tubular structure external diameter all the time with the mounting hole adaptation can, the operation is comparatively nimble.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic overall axial cross-sectional configuration of the present invention;
FIG. 2 is a schematic perspective view of a graphite insulating woven cover according to the present invention;
fig. 3 is a schematic axial sectional structure of the fixing member of the present invention.
Reference numbers and corresponding part names in the drawings: 1-a first crucible, 2-a second crucible, 3-seed crystal, 4-a graphite heat-insulating woven sleeve, 5-a connecting piece, 6-a first positioning ring, 7-a second positioning ring, 8-a first positioning groove, 9-a second positioning groove, 10-a lifting ring, 11-a counterweight ring, 12-a mounting hole, 13-a fixing piece, 14-a limiting plate, 15-a graphite pin and 16-a positioning column.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
The directional solidification seeding module for the monocrystalline silicon comprises a first crucible 1 and a second crucible 2, wherein the second crucible 2 is sleeved in the first crucible 1, a mounting hole 12 is formed in the geometric center of the bottom in the second crucible 2, and a fixing piece 13 used for clamping a seed crystal 3 is detachably connected in the mounting hole 12; the external diameter of second crucible 2 is less than the internal diameter of first crucible 1, is equipped with graphite heat preservation fabric cover 4 at the annular chamber between first crucible 1 and second crucible 2 indoor, graphite heat preservation fabric cover 4 is the open tubular structure in axial both ends, and graphite heat preservation fabric cover 4's axial one end is passed through connecting piece 5 and is fixed on the top of annular cavity, the axial other end hangs down naturally in annular cavity bottom under the action of gravity.
Example 2
The structure is further improved on the basis of the embodiment 1, the connecting piece 5 is in an annular plate structure, the inner diameter of the annular plate is equal to that of the second crucible 2, and the outer diameter of the annular plate is equal to that of the first crucible 1; the open end of one end of the graphite heat-insulating woven sleeve 4 is fixed on the lower plate surface of the annular plate. The lower plate surface of the annular plate is also provided with a first positioning ring 6 and a second positioning ring 7 in a protruding mode along the circumferential direction; the top end face of the first crucible 1 is circumferentially provided with a first positioning groove 8 matched with the first positioning ring 6, and the top end face of the second crucible 2 is circumferentially provided with a second positioning groove 9 matched with the second positioning ring 7. The annular plate is provided with a lifting ring 10 on the upper plate surface. The axial bottom end of the graphite heat-insulating woven sleeve 4 is provided with a counterweight ring 11; the geometric center of the bottom in the first crucible 1 is convexly provided with a positioning column 16, and the outer bottom of the second crucible 2 is concavely provided with a positioning hole matched with the positioning column 16.
Example 3
The improvement is further improved on the basis of the embodiment 2, the fixing piece 13 is in a cylindrical structure with an open end and a closed end, and the seed crystal 3 is inserted into the cylindrical structure for fixing; the outer wall of the open end of the top of the tubular structure is provided with a limiting plate 14 in a ring mode, the limiting plate 14 is provided with a through hole, the bottom surface of the second crucible 2 is provided with a threaded hole matched with the through hole in a position located at the outer edge of the mounting hole 12, and the through hole and the screw-in threaded hole are fixed in a penetrating mode through a graphite pin 15. And a threaded through hole is formed in the side wall of the tubular structure, the axis of the threaded through hole is vertical to the axis direction of the tubular structure, and the graphite pin 15 is screwed into the threaded through hole to tightly press and fix the seed crystal 3 in the tubular structure.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (5)
1. The directional solidification seeding module for the monocrystalline silicon is characterized by comprising a first crucible (1) and a second crucible (2), wherein the second crucible (2) is sleeved in the first crucible (1), a mounting hole (12) is formed in the geometric center of the bottom in the second crucible (2), and a fixing piece (13) for clamping the seed crystal (3) is detachably connected in the mounting hole (12);
the outer diameter of the second crucible (2) is smaller than the inner diameter of the first crucible (1), a graphite heat-insulating woven sleeve (4) is arranged in an annular chamber between the first crucible (1) and the second crucible (2), the graphite heat-insulating woven sleeve (4) is of a cylindrical structure with two axial ends open, one axial end of the graphite heat-insulating woven sleeve (4) is fixed at the top end of the annular chamber through a connecting piece (5), and the other axial end of the graphite heat-insulating woven sleeve is naturally hung at the bottom of the annular chamber under the action of gravity;
the connecting piece (5) is of an annular plate structure, the inner diameter of the annular plate is equal to that of the second crucible (2), and the outer diameter of the annular plate is equal to that of the first crucible (1); the open end of one end of the graphite heat-insulating woven sleeve (4) is fixed on the lower plate surface of the annular plate;
a first positioning ring (6) and a second positioning ring (7) are arranged on the lower plate surface of the annular plate in a protruding mode along the circumferential direction; a first positioning groove (8) matched with the first positioning ring (6) is formed in the top end face of the first crucible (1) along the circumferential direction, and a second positioning groove (9) matched with the second positioning ring (7) is formed in the top end face of the second crucible (2) along the circumferential direction;
the axial bottom end of the graphite heat-insulating woven sleeve (4) is provided with a counterweight ring (11).
2. The single crystal silicon directional solidification seeding module according to claim 1, wherein the annular plate is provided with a pulling ring (10) on an upper plate surface.
3. The directional solidification seeding module of monocrystalline silicon according to claim 1, wherein the fixing member (13) is a cylindrical structure with one open end and one closed end, and the seed crystal (3) is inserted into the cylindrical structure and fixed; the top open end outer wall of tubular structure is fitted with a contraceptive ring and is equipped with limiting plate (14), the through-hole has been seted up on limiting plate (14), the bottom surface of second crucible (2) and be located mounting hole (12) outer fringe department be equipped with the screw hole of through-hole adaptation runs through graphite pin (15) through-hole, screw in threaded hole internal fixation.
4. The directional solidification seeding module for monocrystalline silicon according to claim 3, wherein the side wall of the cylindrical structure is provided with a threaded through hole, the axis of the threaded through hole is vertical to the axial direction of the cylindrical structure, and the graphite pin (15) is screwed into the threaded through hole to tightly press and fix the seed crystal (3) in the cylindrical structure.
5. The directional solidification seeding module of monocrystalline silicon according to claim 1, wherein a positioning column (16) is convexly arranged at the geometric center of the inner bottom of the first crucible (1), and a positioning hole matched with the positioning column (16) is concavely arranged at the outer bottom of the second crucible (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811378218.5A CN109321975B (en) | 2018-11-19 | 2018-11-19 | Monocrystalline silicon directional solidification seeding module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811378218.5A CN109321975B (en) | 2018-11-19 | 2018-11-19 | Monocrystalline silicon directional solidification seeding module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109321975A CN109321975A (en) | 2019-02-12 |
| CN109321975B true CN109321975B (en) | 2020-09-08 |
Family
ID=65258594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811378218.5A Active CN109321975B (en) | 2018-11-19 | 2018-11-19 | Monocrystalline silicon directional solidification seeding module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109321975B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110512288B (en) * | 2019-09-10 | 2021-05-04 | 大同新成新材料股份有限公司 | Thermal field crucible heat preservation device and use method thereof |
| CN117230530B (en) * | 2023-11-15 | 2024-01-30 | 常州臻晶半导体有限公司 | Crystal growth heating system and working method thereof |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0742190B2 (en) * | 1986-04-03 | 1995-05-10 | 株式会社フユ−テツクフア−ネス | Method for manufacturing crucible for growing single crystal |
| JP2723249B2 (en) * | 1988-04-28 | 1998-03-09 | 日本電信電話株式会社 | Crystal growing method and crucible for crystal growing |
| JP2006117442A (en) * | 2004-10-19 | 2006-05-11 | Canon Inc | Method and apparatus for producing single crystal |
| CN100595352C (en) * | 2007-07-17 | 2010-03-24 | 佳科太阳能硅(龙岩)有限公司 | Method for preparing big ingot of polysilicon in level of solar energy |
| CN201138138Y (en) * | 2007-12-12 | 2008-10-22 | 上海普罗新能源有限公司 | Polycrystalline silicon segregating and cogging furnace without need of moving component |
| CN101555620A (en) * | 2008-04-07 | 2009-10-14 | Axt公司 | Crystal growing device and method |
| CN201362752Y (en) * | 2009-03-23 | 2009-12-16 | 浙江碧晶科技有限公司 | Crucible used for growth of silicon single crystals |
| CN202090092U (en) * | 2010-05-20 | 2011-12-28 | 张志坚 | Single-crystal ingot casting furnace with temperature control seed crystal device |
| CN102304768B (en) * | 2011-07-22 | 2014-01-22 | 福建鑫晶精密刚玉科技有限公司 | Insulation barrel for crystal growing thermal field |
| CN102433585B (en) * | 2011-12-08 | 2014-01-29 | 浙江绿谷光伏科技有限公司 | Thermal field structure of quasi-monocrystal ingot furnace |
| CN103160934B (en) * | 2011-12-18 | 2016-05-18 | 洛阳金诺机械工程有限公司 | Thermograde control device and method thereof when a kind of grown crystal material |
| CN103243378B (en) * | 2012-02-09 | 2016-12-14 | 洛阳金诺机械工程有限公司 | Thermograde control structure and method that multilamellar sleeve formed is utilized during crystal growth |
| CN203834048U (en) * | 2014-04-17 | 2014-09-17 | 广东先导半导体材料有限公司 | Novel PBN crucible |
| CN103966657B (en) * | 2014-04-17 | 2017-04-19 | 江苏盎华光伏工程技术研究中心有限公司 | Ingotting furnace for polycrystalline silicon and quasi single crystal silicon and application method for ingotting furnace |
-
2018
- 2018-11-19 CN CN201811378218.5A patent/CN109321975B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109321975A (en) | 2019-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101928980B (en) | Seeding guidance die for growing silicon crystal by directional solidification method | |
| CN109321975B (en) | Monocrystalline silicon directional solidification seeding module | |
| CN102776554B (en) | A kind of polycrystal silicon ingot and preparation method thereof and polysilicon chip | |
| CN202380122U (en) | Straight-pull silicon single crystal growth furnace continuously filled with silicon melt | |
| CN102418140A (en) | Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously | |
| US11326272B2 (en) | Mono-crystalline silicon growth apparatus | |
| CN202380126U (en) | Heat shield device for straight pull silicon single crystal furnace | |
| CN102146580A (en) | Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method | |
| CN205893453U (en) | Guide cylinder for single crystal furnaces | |
| CN202202019U (en) | Heat exchange platform for growing silicon crystals in casting process | |
| CN205171015U (en) | Crucible for polycrystalline silicon cast ingots | |
| CN204779912U (en) | Take LEC growth of single crystal device of dross filtration | |
| CN202492614U (en) | Compound side protective plate for crucible | |
| CN202187086U (en) | Gradient heater for monocrystal furnace | |
| CN202626347U (en) | Ingot furnace thermal field | |
| CN209260258U (en) | It is a kind of for making the thermal field single crystal growing furnace of silicon single crystal material | |
| CN202730294U (en) | Casting crucible for improving monocrystal yield rate | |
| CN209323032U (en) | Crucible for monocrystalline silicon directional solidification growth | |
| CN202297860U (en) | Single crystal furnace thermal field with lifting mechanism | |
| CN201545932U (en) | Silica crucible dedicated for preparation of mercury indium telluride (MIT) single crystal | |
| CN217438340U (en) | Support device for crucible in crystal growth furnace and crystal growth furnace | |
| CN207418905U (en) | A kind of single crystal growing furnace lifts guide shell hoisting mechanism | |
| KR101203969B1 (en) | Silicon Single Crystal Ingot Forming Device | |
| CN103160920A (en) | Heating body structure of single crystal growth furnace | |
| CN104018222B (en) | A kind of for the preparation of the crucible of polycrystal silicon ingot and the growth method of polycrystal silicon ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |