CN109321975A - Monocrystalline silicon directional solidification seeding module - Google Patents
Monocrystalline silicon directional solidification seeding module Download PDFInfo
- Publication number
- CN109321975A CN109321975A CN201811378218.5A CN201811378218A CN109321975A CN 109321975 A CN109321975 A CN 109321975A CN 201811378218 A CN201811378218 A CN 201811378218A CN 109321975 A CN109321975 A CN 109321975A
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- Prior art keywords
- crucible
- heat preservation
- hole
- directional solidification
- monocrystalline silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses monocrystalline silicon directional solidification seeding module, including the first crucible and the second crucible, second crucible is set in the first crucible, and bottom is equipped with seed crystal in the second crucible；Internal diameter of the outer diameter of second crucible less than the first crucible, it is equipped with graphite heat preservation in annular compartment between the first crucible and the second crucible and knits set, the tubular structure that set is in axial ends opening is knitted in the graphite heat preservation, and axial one end that set is knitted in graphite heat preservation is fixed on the top of annular compartment by connector, the axial other end is hung from above naturally under the effect of gravity in annular compartment bottom.The present invention can effectively prevent liquid silicon raw material nucleation and crystallization on the first crucible wall, conducive to the single crystal silicon product for obtaining high quality.
Description
Technical field
The present invention relates to single silicon fields, and in particular to a kind of monocrystalline silicon directional solidification seeding module.
Background technique
Silicon single crystal and policrystalline silicon ingot casting are the most common materials of crystal silicon solar energy battery.In general, using silicon single crystal material
The solar battery of manufacture than the solar battery for using policrystalline silicon material to manufacture there is higher photoelectric transfer to change efficiency.Currently,
The most common manufacturing method of silicon single crystal has czochralski method (Czochralski method) and zone-melting process (Floating Zone method)；Policrystalline silicon
Manufacturer's rule generally use directional solidification method (i.e. casting).Directional solidification method is that silicon raw material is placed on polycrystalline ingot furnace
In interior crucible, making silicon raw material by change temperature field, crystallographic orientation forms policrystalline silicon from bottom to top.
Currently, the silicon crystal made of directional solidification method is grown is usually policrystalline silicon, and silicon single crystal cannot be obtained, led
It wants the reason is that, the initial procedure of directional solidification does not use the seed crystal of particular crystal orientation to guide, solidification is usually from stone
English crucible wall surface starts, and spontaneously forms multiple solidification cores and gradually grows up, make its finally formed crystal polycrystalline rather than
Monocrystalline.Therefore, need to meet specific condition using directional solidification method growing silicon single crystal, most important of which is that starting in solidification
When need using seed crystal complete seeding process.
During directional solidification growth monocrystalline silicon, the temperature field of monocrystalline silicon growing environment is more difficult to control, and liquid-state silicon is former
Expect the nucleation and crystallization easily on crucible internal walls during directional solidification, forms polysilicon structure.
Summary of the invention
The technical problems to be solved by the present invention are: during using directional solidification growth monocrystalline silicon, monocrystalline silicon growing ring
The temperature field in border is more difficult to control, and the liquid silicon raw material nucleation and crystallization easily on crucible internal walls during directional solidification forms polycrystalline
Silicon knot, the present invention provides the monocrystalline silicon directional solidification seeding modules to solve the above problems.
The present invention is achieved through the following technical solutions:
Monocrystalline silicon directional solidification seeding module, including the first crucible and the second crucible, second crucible are set in first
In crucible, mounting hole is offered at the geometric center of bottom in second crucible, is detachably connected and is equipped with for pressing from both sides in mounting hole
Hold the fixing piece of seed crystal；
Internal diameter of the outer diameter of second crucible less than the first crucible, annular chamber between the first crucible and the second crucible
Interior is equipped with graphite heat preservation and knits set, and the tubular structure that set is in axial ends opening is knitted in the graphite heat preservation, and set is knitted in graphite heat preservation
Axial one end is fixed on the top of annular compartment by connector, the axial other end is hung from above naturally in annular chamber under the effect of gravity
Room bottom.
Working principle of the present invention are as follows: in use, first the second crucible is set in the first crucible, it is ensured that the first crucible and
The axial line of two crucibles is overlapped, and then knits graphite heat preservation in the annular compartment that set is put between the first crucible and the second crucible,
The end that set is knitted in graphite heat preservation is fixed on to the top of the first crucible and the second crucible by connector, is made in this way by self gravity
With, the heat preservation of entire graphite knits set pendency in the annular compartment between the first crucible and the second crucible, in this way by the second crucible outside
Wall is between the first crucible internal walls, successively having air heat insulating layer, graphite heat preservation to knit set insulating layer and air heat insulating layer, to the first earthenware
Crucible forms good insulation effect；In addition, first seed crystal is mounted on fixing piece, fixing piece is then detachably connected setting and is existed
In mounting hole, easy disassembly operation；Solidification growth monocrystalline is oriented pouring into the liquid silicon material after melting in the second crucible
During silicon, it can be effectively prevent liquid silicon raw material nucleation and crystallization on the first crucible wall, conducive to the monocrystalline silicon for obtaining high quality
Product.
Preferably, the connector hardened structure in a ring, the internal diameter of annular slab is equal with the internal diameter of the second crucible, annular slab
Outer diameter it is equal with the outer diameter of the first crucible；The open at one end end that set is knitted in graphite heat preservation is fixed on the lower face of annular slab.
Set is knitted using the fixed graphite heat preservation of annular slab, structure is simple, facilitates operation, due to the internal diameter of annular slab and second
The internal diameter of crucible is equal, and the outer diameter of annular slab is equal with the outer diameter of the first crucible, can will to graphite keep the temperature knit set play it is good
Fixed suspension effect, preventing graphite heat preservation from knitting, set is whole to be crashed into the annular compartment between the first crucible and the second crucible.
Preferably, the first positioning ring and the second positioning ring are also circumferentially convexly equipped on the lower face of the annular slab；It is described
Circumferentially arranged with the first locating slot being adapted to first positioning ring, the top of the second crucible in the top end surface of first crucible
Circumferentially arranged with the second locating slot being adapted to second positioning ring on end face.
By the way that the first positioning ring and the second positioning ring correspondence and the first locating slot and the second locating slot are arranged on annular slab
Embedded adaptation, ensure annular slab firm fixation, prevent in use process, annular slab is mobile, influences to protect the first crucible
The uniformity of temperature.
Preferably, the upper face of the annular slab is equipped with lifting ring.
Ring is lifted by setting, facilitates and set lifting or lowering operation is knitted into graphite heat preservation.
Preferably, the axial bottom end that set is knitted in the graphite heat preservation is equipped with counterweight ring.
Counterweight ring is set by knitting set bottom in graphite heat preservation, increases the sagging gravity that set bottom is knitted in graphite heat preservation, ensures
Graphite heat preservation, which is knitted, to be covered the normal extension in annular compartment and comes, and is prevented graphite heat preservation from knitting set and is occurred to fold or accumulation, influences to keep the temperature
Effect.
Preferably, the fixing piece tubular structure closed at one end in open at one end, seed crystal are inserted into fixed in tubular structure；
It is equipped with limit plate on the open top end outer wall of tubular structure, offers through-hole on the limit plate, the bottom surface of the second crucible,
And it is located at the threaded hole for being equipped at mounting hole outer rim and being adapted to the through-hole, by graphite pin through the through-hole, screw-in spiral shell
It is fixed in pit.
Specifically, fixing piece uses tubular structure, and seed crystal is inserted into tubular structure and fixes, and tubular structure is slightly followed closely by graphite
It is fixed in mounting hole, the tubular structure of different inner diameters can be selected according to the size of seed crystal in this way, ensure that tubular structure outer diameter begins
It is adapted to, operates more flexible with mounting hole eventually.
Preferably, tapped through hole is offered on the side wall of the tubular structure, the axis of tapped through hole and tubular structure
Axis direction is vertical, is slightly followed closely by graphite and is fixed the seed crystal in tubular structure in the screw-in tapped through hole.
Preferably, positioning column is convexly equipped in first crucible at the geometric center of bottom, the second crucible outer bottom is recessed
Equipped with the location hole being adapted to the positioning column.
Seed crystal is fixed in tubular structure, prevents seed crystal from floating.
The present invention has the advantage that and the utility model has the advantages that
1, working principle of the present invention are as follows: in use, first the second crucible is set in the first crucible, it is ensured that the first crucible and
The axial line of second crucible is overlapped, and the annular compartment that set is put between the first crucible and the second crucible then is knitted in graphite heat preservation
It is interior, the end that set is knitted in graphite heat preservation is fixed on to the top of the first crucible and the second crucible by connector, in this way by itself weight
Power effect, entire graphite heat preservation knits set pendency in the annular compartment between the first crucible and the second crucible, in this way by the second earthenware
Crucible outer wall is between the first crucible internal walls, successively having air heat insulating layer, graphite heat preservation to knit set insulating layer and air heat insulating layer, to the
One crucible forms good insulation effect；Solidification growth list is oriented pouring into the liquid silicon material after melting in the second crucible
During crystal silicon, it can be effectively prevent liquid silicon raw material nucleation and crystallization on the first crucible wall, conducive to the monocrystalline for obtaining high quality
Silicon product；Suitable for being oriented solidification using heat-exchanging methods such as the cooling of cooling water copper dish or air-cooled coolings；
2, the present invention knits set using the fixed graphite heat preservation of annular slab, and structure is simple, facilitates operation, interior due to, annular slab
Diameter is equal with the internal diameter of the second crucible, and the outer diameter of annular slab is equal with the outer diameter of the first crucible, can will knit and cover to graphite heat preservation
It is acted on to good fixed suspension, prevents graphite heat preservation from knitting the whole annular compartment crashed between the first crucible and the second crucible of set
It is interior.By the way that the first positioning ring and the second positioning ring correspondence and the first locating slot and the second positioning embedded slot are arranged on annular slab
Adaptation, ensure annular slab firm fixation, prevent in use process, annular slab is mobile, influences to the equal of the first crucible heat insulation
Even property；Counterweight ring is set by knitting set bottom in graphite heat preservation, increases the sagging gravity that set bottom is knitted in graphite heat preservation, ensures graphite
Heat preservation, which is knitted, to be covered the normal extension in annular compartment and comes, and is prevented graphite heat preservation from knitting set and is occurred to fold or accumulation, influences heat insulation effect；
3, seed crystal is mounted on fixing piece by the present invention first, is then detachably connected fixing piece and is arranged in mounting hole
It is interior, easy disassembly operation；Specifically, fixing piece uses tubular structure, and seed crystal is inserted into tubular structure and fixes, and tubular structure passes through
Graphite is slightly followed closely and is fixed in mounting hole, can be selected the tubular structure of different inner diameters according to the size of seed crystal in this way, be ensured tubular knot
Structure outer diameter is adapted to mounting hole always, is operated more flexible.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is whole axial cross section structural schematic diagram of the invention；
Fig. 2 is that set schematic perspective view is knitted in graphite heat preservation of the invention；
Fig. 3 is fixing piece axial cross section structural schematic diagram of the invention.
Label and corresponding parts title in attached drawing: the first crucible of 1-, the second crucible of 2-, 3- seed crystal, the heat preservation of 4- graphite
Knit set, 5- connector, the first positioning ring of 6-, the second positioning ring of 7-, the first locating slot of 8-, the second locating slot of 9-, 10- lifts ring,
11- counterweight ring, 12- mounting hole, 13- fixing piece, 14- limit plate, 15- graphite pin, 16- positioning column.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment 1
Monocrystalline silicon directional solidification seeding module, including the first crucible 1 and the second crucible 2, second crucible 2 are set in
In one crucible 1, mounting hole 12 is offered at the geometric center of bottom in second crucible 2, is detachably connected and sets in mounting hole 12
There is the fixing piece 13 for clamping seed crystal 3；The outer diameter of second crucible 2 less than the first crucible 1 internal diameter, in the first crucible 1
And be equipped with graphite heat preservation in the second annular compartment between crucible 2 and knit set 4, it is open in axial ends that set 4 is knitted in the graphite heat preservation
Tubular structure, graphite heat preservation knits axial one end of set 4 and is fixed on the top of annular compartment, the axial other end by connector 5
It is hung from above naturally under the effect of gravity in annular compartment bottom.
Embodiment 2
It is further improved on the basis of embodiment 1, the connector 5 hardened structure in a ring, the internal diameter of annular slab and
The internal diameter of two crucibles 2 is equal, and the outer diameter of annular slab is equal with the outer diameter of the first crucible 1；The open at one end end of set 4 is knitted in graphite heat preservation
It is fixed on the lower face of annular slab.The first positioning ring 6 and the second positioning ring are also circumferentially convexly equipped on the lower face of annular slab
7；Circumferentially arranged with the first locating slot 8 being adapted to first positioning ring 6 in the top end surface of first crucible 1, second
Circumferentially arranged with the second locating slot 9 being adapted to second positioning ring 7 in the top end surface of crucible 2.The upper face of annular slab
It is equipped with lifting ring 10.The axial bottom end that set 4 is knitted in graphite heat preservation is equipped with counterweight ring 11；In first crucible 1 at the geometric center of bottom
It is convexly equipped with positioning column 16,2 outer bottom of the second crucible is recessed with the location hole being adapted to the positioning column 16.
Embodiment 3
It is further improved on the basis of embodiment 2, the fixing piece 13 tubular structure closed at one end in open at one end,
Seed crystal 3 is inserted into fixed in tubular structure；Limit plate 14, the limit plate 14 are equipped on the open top end outer wall of tubular structure
On offer through-hole, the bottom surface of the second crucible 2 and be located at the threaded hole for being equipped at 12 outer rim of mounting hole and being adapted to the through-hole,
It is fixed in the through-hole, screw-in threaded hole by graphite pin 15.It is logical that screw thread is offered on the side wall of the tubular structure
Hole, the axis of tapped through hole and the axis direction of tubular structure are vertical, and slightly being followed closely by graphite will in the 15 screw-in tapped through holes
Seed crystal 3 in tubular structure is fixed.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (8)
1. monocrystalline silicon directional solidification seeding module, which is characterized in that including the first crucible (1) and the second crucible (2), described second
Crucible (2) is set in the first crucible (1), is offered mounting hole (12) at the interior bottom geometric center of the second crucible (2), is pacified
The fixing piece (13) being equipped with for clamping seed crystal (3) is detachably connected in dress hole (12)；
The outer diameter of second crucible (2) less than the first crucible (1) internal diameter, between the first crucible (1) and the second crucible (2)
Annular compartment in be equipped with graphite heat preservation and knit set (4), graphite heat preservation knits set (4) in the tubular structure of axial ends opening,
Axial one end that set (4) is knitted in graphite heat preservation passes through connector (5) and is fixed on the top of annular compartment, the axial other end in gravity work
It is hung from above naturally with lower in annular compartment bottom.
2. monocrystalline silicon directional solidification seeding module according to claim 1, which is characterized in that the connector (5) is in ring
The hardened structure of shape, the internal diameter of annular slab is equal with the internal diameter of the second crucible (2), the outer diameter of the outer diameter of annular slab and the first crucible (1)
It is equal；The open at one end end that set (4) is knitted in graphite heat preservation is fixed on the lower face of annular slab.
3. monocrystalline silicon directional solidification seeding module according to claim 2, which is characterized in that the lower face of the annular slab
On be also circumferentially convexly equipped with the first positioning ring (6) and the second positioning ring (7)；Along week in the top end surface of first crucible (1)
To the first locating slot (8) being adapted to first positioning ring (6) is equipped with, circumferentially set in the top end surface of the second crucible (2)
There is the second locating slot (9) being adapted to second positioning ring (7).
4. monocrystalline silicon directional solidification seeding module according to claim 2, which is characterized in that the upper face of the annular slab
It is equipped with lifting ring (10).
5. monocrystalline silicon directional solidification seeding module according to claim 1, which is characterized in that set is knitted in the graphite heat preservation
(4) axial bottom end is equipped with counterweight ring (11).
6. monocrystalline silicon directional solidification seeding module according to claim 1, which is characterized in that the fixing piece (13) is in one
The open tubular structure closed at one end in end, seed crystal (3) are inserted into fixed in tubular structure；On the open top end outer wall of tubular structure
It is equipped with limit plate (14), offers through-hole on the limit plate (14), the bottom surface of the second crucible (2) and be located at mounting hole
(12) threaded hole being adapted to the through-hole is equipped at outer rim, by graphite pin (15) through the through-hole, screw-in threaded hole
Interior fixation.
7. monocrystalline silicon directional solidification seeding module according to claim 6, which is characterized in that the side wall of the tubular structure
On offer tapped through hole, the axis of tapped through hole and the axis direction of tubular structure are vertical, slightly followed closely by graphite (15) screw-in
The seed crystal (3) in tubular structure is fixed in the tapped through hole.
8. monocrystalline silicon directional solidification seeding module according to claim 1, which is characterized in that in first crucible (1)
It is convexly equipped at the geometric center of bottom positioning column (16), the second crucible (2) outer bottom is recessed with suitable with the positioning column (16)
The location hole matched.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811378218.5A CN109321975B (en) | 2018-11-19 | 2018-11-19 | Monocrystalline silicon directional solidification seeding module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811378218.5A CN109321975B (en) | 2018-11-19 | 2018-11-19 | Monocrystalline silicon directional solidification seeding module |
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| CN109321975B CN109321975B (en) | 2020-09-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110512288A (en) * | 2019-09-10 | 2019-11-29 | 大同新成新材料股份有限公司 | A kind of thermal field crucible attemperator and its application method |
| CN117230530A (en) * | 2023-11-15 | 2023-12-15 | 常州臻晶半导体有限公司 | Crystal growth heating system and working method thereof |
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| CN110512288A (en) * | 2019-09-10 | 2019-11-29 | 大同新成新材料股份有限公司 | A kind of thermal field crucible attemperator and its application method |
| CN117230530A (en) * | 2023-11-15 | 2023-12-15 | 常州臻晶半导体有限公司 | Crystal growth heating system and working method thereof |
| CN117230530B (en) * | 2023-11-15 | 2024-01-30 | 常州臻晶半导体有限公司 | Crystal growth heating system and working method thereof |
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