CN109166792B - Method for preparing flexible single crystal film based on stress compensation and flexible single crystal film - Google Patents
Method for preparing flexible single crystal film based on stress compensation and flexible single crystal film Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The invention provides a method for preparing a flexible monocrystalline film based on stress compensation and the flexible monocrystalline film, wherein the preparation comprises the following steps: providing a first single crystal substrate and a second single crystal substrate which are respectively provided with a first ion implantation surface and a second ion implantation surface; performing first ion implantation on the first single crystal substrate to form a first defect layer, and performing second ion implantation on the second single crystal substrate to form a second defect layer; bonding the first ion implantation surface and the second ion implantation surface; and stripping along the first defect layer to obtain a first monocrystalline film layer, and stripping along the second defect layer to obtain a second monocrystalline film layer, so as to obtain the flexible monocrystalline film. The flexible single crystal film composed of the first single crystal film layer and the second single crystal film layer is prepared by adopting a symmetrical stress compensation technology, so that the problems of curling and cracking of the prepared film are avoided; so that a thin film having ultra-thin, ultra-light, flexible and self-supporting characteristics can be obtained; the scheme of the invention can be used for preparing the large-area flexible single crystal film.
Description
Technical Field
The invention belongs to the technical field of semiconductor preparation, and particularly relates to a method for preparing a flexible monocrystalline film based on stress compensation and the flexible monocrystalline film.
Background
In recent years, flexible electronics based on flexible substrates have attracted wide attention worldwide, and have potential application prospects in various fields such as flexible displays, electronic skins, sensors, wearable devices and the like.
At present, flexible substrates and functional thin films are the basis of materials constituting flexible electronic devices, and generally, single crystal functional thin films have more outstanding properties than polycrystalline or amorphous thin films. However, the preparation of single crystal films is always a difficult point in the technical field of semiconductor preparation, and the conventional film preparation methods such as a pulse laser deposition method, a magnetron sputtering method, an atomic layer deposition method, a thermal evaporation method and the like are difficult to prepare high-quality single crystal films; the molecular beam epitaxy technology for preparing the single crystal film needs a specific single crystal substrate, the single crystal film to be grown is matched with the lattice (constant) of the used substrate, the flexible substrate and the functional film are often greatly different in structure, the selection of the substrate is limited, and meanwhile, the epitaxial growth has higher requirements on the growth environment such as temperature, pressure and the like, so that the epitaxial preparation of the large-area high-quality single crystal functional film on the flexible substrate faces many challenges; in addition, besides epitaxial matching growth, the film transfer technology is also an effective means for preparing single crystal films, but the conventional film transfer technologies, such as ion beam stripping, bonding, grinding and the like, mostly transfer single crystal films to hard materials, and the conventional film transfer technology is not suitable for flexible substrates due to mechanical instability; meanwhile, the surface flatness of the flexible substrate is low, a high-quality bonding interface is difficult to form, and the later device process is not facilitated.
Therefore, how to provide a flexible single crystal thin film and a preparation method thereof are necessary to solve the problems, and the provision of a general single crystal thin film preparation technology for flexible electronics is of great significance.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a method for preparing a flexible monocrystalline film based on stress compensation and a flexible monocrystalline film, which are used for solving the problems of the prior art, such as defects in the flexible monocrystalline film, particularly difficulty in preparing a high-quality flexible monocrystalline film in a large area, and the like.
To achieve the above and other related objects, the present invention provides a method for preparing a flexible single crystal thin film based on stress compensation, comprising the steps of:
1) providing a first single crystal substrate and a second single crystal substrate, wherein the first single crystal substrate is provided with a first ion implantation surface, and the second single crystal substrate is provided with a second ion implantation surface;
2) performing a first ion implantation from the first ion implantation surface to the first single crystal substrate to form a first defect layer in the first single crystal substrate, and performing a second ion implantation from the second ion implantation surface to the second single crystal substrate to form a second defect layer in the second single crystal substrate;
3) bonding the first ion implantation surface and the second ion implantation surface; and
4) and peeling part of the first monocrystalline substrate along the first defect layer to obtain a first monocrystalline film layer, and peeling part of the second monocrystalline substrate along the second defect layer to obtain a second monocrystalline film layer, so as to obtain the flexible monocrystalline film consisting of the bonded first monocrystalline film layer and the second monocrystalline film layer.
In a preferred embodiment of the present invention, in step 2), the depths of the first and second defect layers are controlled so that the stress in the first single crystal substrate caused by the first ion implantation and the stress in the second single crystal substrate caused by the second ion implantation are substantially the same.
As a preferred aspect of the present invention, the stress generated in the first single crystal substrate and the second single crystal substrate is adjusted by controlling at least one of an implantation ion species and an implantation dose during ion implantation.
As a preferable aspect of the present invention, in step 1), the kind of the first single crystal substrate is the same as the kind of the second single crystal substrate, and in step 2), the depth of the first defect layer is substantially the same as the depth of the second defect layer.
In a preferred embodiment of the present invention, in step 2), the first ion implantation is performed by any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen implantation; the second ion implantation is performed by any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen implantation.
As a preferable scheme of the invention, the method further comprises the following steps between the step 1) and the step 2): and cleaning at least one of the first ion implantation surface and the second ion implantation surface.
In a preferred embodiment of the present invention, the bonding in step 3) is performed by any one of direct bonding and indirect bonding.
As a preferable aspect of the present invention, in step 4), a part of the first single crystal substrate and a part of the second single crystal substrate are separated by any one of annealing treatment and wet etching.
In a preferred embodiment of the present invention, a portion of the first single crystal substrate and a portion of the second single crystal substrate are separated by annealing, the annealing is performed in a vacuum environment or in a protective atmosphere formed by at least one of nitrogen, oxygen, and an inert gas, the annealing temperature is 100 to 1000 ℃, and the annealing time is 1 minute to 48 hours.
As a preferable mode of the present invention, the first single crystal substrate includes a single crystal substrate, the second single crystal substrate includes a single crystal substrate, the first single crystal thin film layer forms a first functional layer, and the second single crystal thin film layer forms a second functional layer.
The invention also provides a flexible monocrystalline film based on stress compensation, which comprises a first monocrystalline film layer and a second monocrystalline film layer, wherein the second monocrystalline film layer is bonded on the surface of the first monocrystalline film layer, so that the stress in the first monocrystalline film layer and the stress in the second monocrystalline film layer are mutually offset.
In a preferred embodiment of the present invention, the first single crystal thin film layer includes a first single crystal functional layer, and the second single crystal thin film layer includes a second single crystal functional layer.
As described above, the method for preparing a flexible single crystal thin film based on stress compensation and the flexible single crystal thin film of the present invention have the following beneficial effects: the invention provides a method for preparing a flexible monocrystalline film based on stress compensation and the flexible monocrystalline film, wherein the flexible monocrystalline film consisting of a first monocrystalline film layer and a second monocrystalline film layer is prepared by adopting a symmetrical stress compensation technology, and the problems of curling and cracking of the prepared film are avoided based on the stress compensation; so that a thin film having ultra-thin, ultra-light, flexible and self-supporting characteristics can be obtained; meanwhile, a large-area flexible single crystal film can be prepared by the scheme of the invention; in addition, the ion beam stripping process is adopted to form the single crystal film, the obtained two same or different single crystal films are integrated in a bonding mode, the requirement on the lattice matching degree is almost eliminated, and the film material and the selection are flexible; the defects can be controlled in a very small thickness range near the interface, the quality of crystal lattices in the film is not influenced, and the material performance can be ensured even if the thickness of the stripped film is very small.
Drawings
FIG. 1 is a process flow chart of the invention for preparing a flexible monocrystalline film based on stress compensation.
FIG. 2 is a schematic structural diagram of providing a first single crystal substrate in the preparation of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 3 is a schematic structural diagram of providing a second single crystal substrate in the preparation of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 4 is a schematic structural diagram of a first ion implantation process in the preparation of a flexible single crystal film based on stress compensation according to the present invention.
FIG. 5 is a schematic structural diagram of a second ion implantation process in the preparation of a flexible single crystal film based on stress compensation according to the present invention.
FIG. 6 is a diagram illustrating bonding of a first single crystal substrate and a second single crystal substrate in the fabrication of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 7 is a schematic diagram showing bonding of an intermediate layer in the production of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 8 is a schematic diagram showing the peeling of a first single crystal substrate and a second single crystal substrate in the production of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 9 is a schematic diagram showing the presence of delamination of an intermediate layer in the production of a flexible single crystal thin film based on stress compensation according to the present invention.
FIG. 10 is a schematic structural diagram of a flexible monocrystalline film formed in the preparation of the flexible monocrystalline film based on stress compensation according to the present invention.
FIG. 11 is a diagram illustrating the formation of a flexible single crystal thin film with an intermediate layer in the production of the flexible single crystal thin film based on stress compensation according to the present invention.
Description of the element reference numerals
100 first single crystal substrate
100a first ion implantation surface
101 first defective layer
102 first monocrystalline thin film layer
103 first lift-off residue layer
200 second single crystal substrate
200a second ion implantation surface
201 second defective layer
202 second monocrystalline film layer
203 second stripping residual layer
300 flexible single crystal thin film
400 middle layer
S1-S4 Steps 1) to 4)
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 11. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1, the present invention provides a method for preparing a flexible single crystal thin film based on stress compensation, comprising the steps of:
1) providing a first single crystal substrate and a second single crystal substrate, wherein the first single crystal substrate is provided with a first ion implantation surface, and the second single crystal substrate is provided with a second ion implantation surface;
2) performing a first ion implantation from the first ion implantation surface to the first single crystal substrate to form a first defect layer in the first single crystal substrate, and performing a second ion implantation from the second ion implantation surface to the second single crystal substrate to form a second defect layer in the second single crystal substrate;
3) bonding the first ion implantation surface and the second ion implantation surface; and
4) and peeling part of the first monocrystalline substrate along the first defect layer to obtain a first monocrystalline film layer, and peeling part of the second monocrystalline substrate along the second defect layer to obtain a second monocrystalline film layer, so as to obtain the flexible monocrystalline film consisting of the bonded first monocrystalline film layer and the second monocrystalline film layer.
The process for preparing the flexible single crystal thin film according to the present invention will be described in detail with reference to the accompanying drawings.
First, as shown in S1 in fig. 1 and fig. 2-3, step 1) is performed to provide a first single crystal substrate 100 and a second single crystal substrate 200, wherein the first single crystal substrate 100 has a first ion implantation surface 100a, and the second single crystal substrate 200 has a second ion implantation surface 200 a.
As an example, the first single crystal substrate 100 includes a single crystal substrate, and the second single crystal substrate 200 includes a single crystal substrate.
Specifically, the present invention firstly provides two kinds of substrates, that is, the first single crystal substrate 100 and the second single crystal substrate 200, which may be the same kind of substrate or different kinds of substrates, and for example, the first single crystal substrate 100 and the second single crystal substrate 200 may be LiNbO substrates3The first single crystal substrate 100 may be a Si substrate, and the second single crystal substrate 200 may be LiNbO3The selection is based on actual requirements, but not limited to this. By adopting the method, the flexible monocrystalline film can be prepared on the basis of the first monocrystalline substrate made of the monocrystalline material and the second monocrystalline substrate made of the monocrystalline material, and the defect of preparing the high-quality monocrystalline film in the prior art is overcome.
Next, as shown in S2 in fig. 1 and fig. 4 to 5, step 2) is performed to perform a first ion implantation from the first ion implantation surface 100a into the first single crystal substrate 100 to form a first defect layer 101 in the first single crystal substrate 100, and to perform a second ion implantation from the second ion implantation surface 200a into the second single crystal substrate 200 to form a second defect layer 201 in the second single crystal substrate 200.
As an example, step 2) of controlling the depths of the first defect layer 101 and the second defect layer 201 so that the stress generated in the first single crystal substrate 100 based on the first ion implantation is substantially the same as the stress generated in the second single crystal substrate 200 based on the second ion implantation.
As an example, the stress generated in the first single crystal substrate and the second single crystal substrate is adjusted by controlling at least one of an implanted ion species and an implanted dose during ion implantation.
As an example, the depth of the first and second defect layers 101 and 201 is adjusted by controlling the implantation energy of ion implantation during ion implantation.
Specifically, in this step, ion implantation is performed on both substrates, and in the ion implantation process of this step, a first defect layer 101 and a second defect layer 201 are formed in the first single crystal substrate 100 and the second single crystal substrate 200, respectively, wherein the depth of the first defect layer 101 can be adjusted by controlling the implantation energy of the implanted ions in the first ion implantation process, and further the stress generated in the first single crystal substrate 100 is controlled by at least one of the species and the dose of the implanted ions in the first ion implantation process, wherein the depth of the first defect layer 101 refers to the distance between the first ion implantation surface 100a and the first defect layer 101, and so on, and similarly, the depth of the second defect layer 201 can also be adjusted by the above-mentioned manner, and further the stress generated in the second single crystal substrate 200 is controlled, the implanted ions are in Gaussian distribution in the single crystal film, and different damage to crystal lattices is caused due to different concentrations of the implanted ions in different film depths, so that different stress distributions are caused. In the solution of the present invention, by the above adjustment, the stresses generated in the first single crystal substrate 100 and the second single crystal substrate 200 are substantially the same, where the substantially same stresses refer to that the magnitudes of the stresses can be substantially or completely offset each other, the stresses of the two can be macroscopically offset, further, the magnitudes and distributions of the stresses of the two can be substantially or completely identical each other, and the extent that the stresses of the two can be considered to be offset each other by a person skilled in the art can be further avoided, so that the problem of curling and cracking of the first single crystal thin film layer and the second single crystal thin film layer prepared in the subsequent process can be avoided, and thus the flexible single crystal thin film composed of the first single crystal thin film layer and the second single crystal thin film layer can be a composite thin film having the characteristics of being ultra-thin, ultra-light, flexible and self-supporting, and of course, the substantially same stresses can be obtained by simulation or a, but are not limited in sequence and are selected according to actual conditions.
In addition, in one example, the flexibility of the finally formed thin film can be adjusted by adjusting the thicknesses of the first monocrystalline thin film layer, the second monocrystalline thin film layer and the intermediate layer, and the thickness of the peeled thin film can be conveniently adjusted by the ion implantation peeling technology based on the method of the invention, and the thinnest can be less than 100nm, such as 90 nm.
As an example, in step 1), the kind of the first single crystal substrate 100 is the same as that of the second single crystal substrate 200, and in step 2), the depth of the first defect layer 101 is substantially the same as that of the second defect layer 201.
Specifically, in an alternative embodiment, the type of the first single crystal substrate 100 is the same as the type of the second single crystal substrate 200, and at this time, the ion implantation conditions, such as the ion implantation type and the implantation energy, of the first single crystal substrate 100 and the second single crystal substrate 200 are kept the same, so that the depth of the first defect layer 101 is almost the same as the depth of the second defect layer 201, and further the stresses generated in the two layers are almost the same, that is, the depths of the defect layers are substantially or completely the same, so that the stresses are only enough to be considered by those skilled in the art to be mutually offset, and therefore, based on the above scheme, for a semiconductor thin film with a certain thickness that is difficult to be prepared, a high-quality thin film can be obtained based on the two substrates by the stress compensation technique of the present invention.
As an example, in step 2), the first ion implantation is performed by any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen implantation; the second ion implantation is performed by any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen implantation. When the hydrogen ions and the helium ions are selected to be co-implanted, the implantation of the hydrogen ions may be performed before the implantation of the helium ions, or the implantation of the hydrogen ions may be performed after the implantation of the helium ions, or the hydrogen ions and the helium ions may be simultaneously implanted, depending on the actual selection.
Specifically, in an example of selectively implanting oxygen to form the defect layer, for example, in the preparation of an SOI material, a defect layer of a silicon oxide layer may be formed by implanting oxygen ions into a single crystal Si substrate at a certain energy and dose, and a top single crystal thin film, such as a single crystal silicon thin film, may be obtained by delamination at the defect layer of the silicon oxide layer.
In one example, the first ion implantation surface 100a and the second ion implantation surface 200a are respectively subjected to single-type ion implantation, and the implanted ions are hydrogen (H) ions, which can be achieved by utilizing the principle that hydrogen ions can damage the crystal lattice deep in the peeling process (i.e., the first defect layer 101 and the second defect layer 201). That is, in the ion implantation process, ions enter into the atomic gaps to form micro defects (the first defect layer 101 and the second defect layer 201), most of the implanted defect layers formed by ion implantation are nano-scale void defects, the material still has strong mechanical strength at the interface, and in the subsequent treatment process, the micro defects are aggregated and combined to form plate-shaped defects, and the plate-shaped defects are converted into continuous defect layers. Since the depth of formation of the defect layer is determined by the energy of ion implantation, and the defect density required for separation is determined by the dose of ion implantation, an appropriate dose and energy of ion implantation are selected during the ion implantation.
In another example, co-implantation of two types of ions is performed at the implantation surface, the implanted ions being hydrogen ions and helium ions, wherein, in one mode, the hydrogen ions are used to form defects as described above, the defects being gaussian distributed within the defect layer; and the helium ions belong to inert elements, can be captured by the platform defects formed by the hydrogen ions, and can expand and combine the platform defects through physical action to finally form cracks capable of separating the bonding substrate, thereby promoting part of the bonding substrate to be stripped from the position with the maximum defect concentration. And co-implantation of hydrogen ions and helium ions is carried out on the ion implantation surface, the helium ions can be captured by the defects formed by the hydrogen ions and then enter the atomic gap and exert pressure, which is equivalent to that an extra acting force is exerted inside the defects generated by the hydrogen ions, so that the bonded substrate can be effectively promoted to be stripped under the condition of low ion implantation dosage, that is, the total ion implantation dosage can be effectively reduced, the preparation period is further shortened, and the production cost is saved.
Preferably, in order to make the implanted helium ions easily captured by the defects formed by the hydrogen ions, or the implanted hydrogen ions easily captured by the defects formed by the helium ions, the depth of the implanted helium ions needs to be the same as or close to the depth of the implanted hydrogen ions, that is, the range (Rp) of the helium ions needs to be ensured to be near the range of the implanted hydrogen ions.
As an example, the method further comprises the following steps between the step 1) and the step 2): at least one of the first ion implantation surface 100a and the second ion implantation surface 200a is cleaned.
Specifically, in an optional embodiment, before performing ion implantation, the substrate surface that needs to be subjected to ion implantation is further cleaned, that is, the first ion implantation surface 100a and the second ion implantation surface 200a are cleaned, preferably, both are cleaned, wherein in an example, the cleaning solution sequentially adopts acetone, alcohol, and deionized water, so that surface impurities can be removed, and bonding is facilitated.
Next, as shown in S3 in fig. 1 and fig. 6 to 7, step 3) is performed to bond the first ion implantation surface 100a and the second ion implantation surface 200 a.
In step 3), the bonding may be performed by any one of direct bonding and indirect bonding.
As an example, as shown in fig. 7, the bonding may be performed by an indirect bonding process, in which an intermediate layer 400 is formed, in one example, the intermediate layer has flexibility, and the thickness of the intermediate layer 400 is less than 25 μm, and in a preferred embodiment, the thickness of the intermediate layer 400 is less than 10 μm, so as to facilitate stress compensation during the bonding process.
Specifically, in this step, the first single crystal substrate and the second single crystal substrate after ion implantation are bonded, and in the resulting structure, stresses generated in the two substrates are opposed to each other with respect to the bonded surfaceThe stress in the films can be mutually compensated, the problems of curling and cracking of the prepared single crystal film are avoided, and meanwhile, the obtained structure can have the characteristics of being ultrathin, ultralight, flexible and self-supporting. In addition, the bonding manner includes, but is not limited to, direct bonding or dielectric layer bonding, metal bonding, anodic bonding and indirect bonding processes. In addition, in an optional embodiment, an indirect bonding manner is adopted, an intermediate layer 400 is formed in the indirect bonding process, the intermediate layer 400 bonds the first single crystal substrate and the second single crystal substrate together, and may be a BCB (novel benzocyclobutene) material, which may be selected according to actual conditions, for example, the type of the intermediate layer is selected according to the peeling temperature, annealing and peeling temperatures of different single crystal films are different, and temperature resistance of different types of high polymers is also different, for example, for a BCB material, the temperature resistance is about 350 ℃, LiNbO is a LiNbO material, which has a temperature resistance of up to 350 ℃3The single crystal thin film peeling temperature is lower than 250 ℃, so BCB is suitable for LiNbO3For the middle layer stripped by the single crystal film after bonding and wet etching stripping, the type of the middle layer can be selected according to the acid-base property of the etching solution, different high polymers have different acid-base resistance characteristics, and different etching solutions required by wet etching of different single crystal defect layers are different; in the case of hydrofluoric acid (HF), the high polymer PMMA can withstand a certain concentration of HF, while BCB is less resistant to HF. By adopting the symmetrical stress compensation technology, the high-quality flexible composite film can be obtained under the condition of smaller thickness of the intermediate layer, so that the finally obtained bonded and stripped structure is ultrathin, ultralight and flexible.
Finally, as shown in S4 in fig. 1 and fig. 8 to 11, step 4) is performed to peel off a portion of the first single crystal substrate 100 along the first defective layer 101 to obtain a first single crystal thin film layer 102 while forming a first peeled residual layer 103, and to peel off a portion of the second single crystal substrate 200 along the second defective layer 201 to obtain a second single crystal thin film layer 202 while forming a peeled residual layer 203, thereby obtaining the flexible single crystal thin film 300 composed of the first single crystal thin film layer 102 and the second single crystal thin film layer 202 bonded together.
As an example, the first single crystal substrate 100 includes a single crystal substrate, the second single crystal substrate 200 includes a single crystal substrate, the first single crystal thin film layer 102 forms a first functional layer, and the second single crystal thin film layer 202 forms a second functional layer. The thicknesses of the first single crystal thin film layer 102 and the second single crystal thin film layer 202 are selected according to actual requirements, in an embodiment, the thickness of the first single crystal thin film layer 102 is less than 25 μm, and the thickness of the second single crystal thin film layer 202 is less than 25 μm.
Specifically, in this step, after the first single crystal substrate 100 and the second single crystal substrate 200 are peeled off, the desired flexible single crystal thin film 300 is obtained, and by using the method of the present invention, the first single crystal thin film layer 102 and the second single crystal thin film layer 202 can be used as functional layers in a device structure, can be made of the same material, can also be made of different materials, and can also be selected as single crystals to mutually compensate for stress existing in the thin films, so that the problems of curling and cracking of the prepared single crystal thin films are avoided, an additional flexible substrate is not required, and the obtained structure can have the characteristics of ultra-thin, ultra-light and flexibility, and simultaneously has the characteristic of self-support. For example, a 500nm thick LiNbO3The single crystal film is bonded on a PDMS substrate with the thickness of 1cm, and the whole structure is flat and flexible; if LiNbO is 500nm thick3The single crystal film is bonded on the 5um PDMS substrate, the whole structure is curled or deformed, because the 5um PDMS substrate can not compensate LiNbO3The stress of the film, and the symmetrical single crystal film structure of the invention has the advantages that the mutual offset of the stress is realized, the thickness of the intermediate layer is not limited, and the intermediate layer can be extremely thin or eliminated (related to a bonding mode); the single-layer single crystal film can be curled or cracked due to the existence of stress, the single-layer single crystal film and flexible substrate structure has requirements on the thickness of the flexible substrate, and the symmetrical single crystal film structure has no limitation.
In addition, a composite film (such as a single crystal film) is formed by adopting an ion beam stripping process, preferably, the first single crystal substrate and the second single crystal substrate are simultaneously stripped, and the obtained two films (such as single crystal films) of the same kind or different kinds are integrated in a bonding mode, so that the requirement on the lattice matching degree is almost eliminated, and the film material and the selection are flexible; furthermore, different from the thin film material obtained by the epitaxial matching growth technology, the defect can be controlled in a very small thickness range near an interface by adopting a mode of combining ion beam stripping and bonding, the defect refers to lattice damage caused by implanted ions, the implanted ions can be enriched towards the position with the maximum concentration in the annealing process, the single crystal thin film is stripped at the position with the maximum concentration, and the depth range of stripping span is small, so that the defect is well controlled, the quality of crystal lattices in the thin film is not influenced, and the material performance can be ensured even if the thickness of the stripped thin film is very small. In addition, the technical scheme of the invention can be used for preparing a large-area (such as a wafer level) flexible composite film, and solves the problem that a large-area flexible single crystal film is difficult to obtain by other processes, for example, the preparation of the single crystal film on a flexible substrate in an epitaxial growth mode is almost impossible; in addition, generally, a structure of 'single crystal thin film-sacrificial layer-hard substrate' is prepared first, then the sacrificial layer is corroded to suspend most of the upper single crystal thin film, and then the viscous flexible substrate (such as PDMS) is used for transferring the single crystal thin film which is almost separated from the hard substrate (suspended); one of the key points of the method is that the sacrificial layer is corroded, the conventional lateral corrosion rate is very slow, and the suspended monocrystal film is easy to collapse in the corrosion process, so that the monocrystal film is adhered to the hard substrate, the sacrificial layer is prevented from being further laterally corroded, and the large-area suspended monocrystal film is difficult to obtain; or firstly preparing a structure of 'single crystal film-sacrificial layer-hard substrate', and then etching the upper single crystal film to expose the sacrificial layer directly, thereby increasing the contact area of the corrosive liquid and the sacrificial layer, and the method destroys the integrity of the single crystal film; the method does not need to prepare a structure of 'single crystal film-sacrificial layer-hard substrate' and does not need to corrode the sacrificial layer, but introduces the defect layer through ion beams, the defect layer is directly separated at high temperature, and the separation process is the whole-surface separation, so that the wafer-level film can be prepared.
As an example, in step 4), a portion of the first single crystal substrate 100 and a portion of the second single crystal substrate 200 are separated by any one of annealing and wet etching.
As an example, a portion of the first single crystal substrate 100 and a portion of the second single crystal substrate 200 are peeled off by means of an annealing treatment performed in a vacuum atmosphere or a protective atmosphere formed by at least one of nitrogen, oxygen, and an inert gas. As an example, the annealing temperature of the annealing treatment is between 100 ℃ and 1000 ℃, and is set according to the actual stripping material, such as the LiNbO3 stripping temperature is about 250 ℃, the Si stripping temperature is about 500 ℃, and the SiC stripping temperature is higher than 800 ℃, and the annealing time is between 1 minute and 48 hours, preferably between 5 and 20 hours.
Specifically, as for the stripping manner, an annealing treatment manner may be selected, and in a preferred embodiment, a two-stage annealing manner is adopted, in which annealing is performed at a first temperature, and then annealing is performed at a second temperature, the annealing temperature and time are selected according to actual materials, such as LiNbO3 material, and the material may be consolidated (bonding strength) at about 100 ℃ for 10 hours, and then stripping is maintained at 250 ℃ for 1 hour, wherein the first temperature is lower than the second temperature, and annealing is performed at a lower temperature (such as the first temperature) for a longer time, so that the H ions and He ions have sufficient migration energy to form defects, that is, diffusion of H or He in the material is promoted and the H ions and He defects in the material are combined, but it is ensured that a large amount of the H ions and He ions do not escape from the substrate; annealing at a higher temperature (e.g., the second temperature) may form a defect band with defects in the defect layer, thereby causing delamination. During the annealing process, the aggregation of H and/or He can expand by heating, the pressure inside the defect is increased, the chemical bond is broken, the defect value is increased, a flat defect strip is formed at the defect layer, and finally the heterogeneous film is peeled. Therefore, the composite annealing process of the low-temperature pre-annealing and the high-temperature post-annealing can shorten the annealing time more than the direct annealing process, and in addition, the annealing process is preferably performed in a vacuum environment or in a protective atmosphere formed by at least one of nitrogen and inert gas.
In another embodiment, the first single crystal substrate and the second single crystal substrate may be, for example, Si and LiNbO, respectively, and the first single crystal substrate and the second single crystal substrate may be optionally separated by wet etching3Adopting hydrofluoric acid to etch two defect layers simultaneously, and implanting oxygen ion into Si substrate to LiNbO3Helium ions are implanted to more effectively etch two defect layers simultaneously.
As shown in fig. 9 to 10, the present invention further provides a flexible monocrystalline film 300 based on stress compensation, wherein the flexible monocrystalline film is preferably prepared by the method for preparing a flexible monocrystalline film based on stress compensation provided by the present invention, the flexible monocrystalline film includes a first monocrystalline film layer 102 and a second monocrystalline film layer 202, and the second monocrystalline film layer 202 is bonded to the surface of the first monocrystalline film layer 102, so that the stress in the first monocrystalline film layer 102 and the stress in the second monocrystalline film layer 102 cancel each other out.
As an example, a bonding interlayer 400 is further included between the first single crystalline thin film layer 102 and the second single crystalline thin film layer 202.
As an example, the first monocrystalline thin film layer includes a first monocrystalline functional layer and the second monocrystalline thin film layer includes a second monocrystalline functional layer.
Specifically, the invention further provides a flexible monocrystalline film 300 based on stress compensation, wherein the stress in the first monocrystalline film layer 102 and the stress in the second monocrystalline film layer 102 are mutually offset in the bonding process, so that the problem of curling and cracking of the prepared first monocrystalline film layer and the second monocrystalline film layer is avoided, and thus the flexible monocrystalline film formed by the first monocrystalline film layer and the second monocrystalline film layer is a composite film with the characteristics of ultrathin thickness, ultralight weight, flexibility and self-support, and the flexible monocrystalline film with a large area can be obtained by the scheme of the invention.
In summary, the present invention provides a method for preparing a flexible single crystal thin film based on stress compensation and a flexible single crystal thin film, comprising the following steps: providing a first single crystal substrate and a second single crystal substrate, wherein the first single crystal substrate is provided with a first ion implantation surface, and the second single crystal substrate is provided with a second ion implantation surface; performing a first ion implantation from the first ion implantation surface to the first single crystal substrate to form a first defect layer in the first single crystal substrate, and performing a second ion implantation from the second ion implantation surface to the second single crystal substrate to form a second defect layer in the second single crystal substrate; bonding the first ion implantation surface and the second ion implantation surface; and peeling part of the first monocrystalline substrate along the first defect layer to obtain a first monocrystalline film layer, and peeling part of the second monocrystalline substrate along the second defect layer to obtain a second monocrystalline film layer, thereby obtaining the flexible monocrystalline film composed of the bonded first monocrystalline film layer and the second monocrystalline film layer. According to the invention, the flexible single crystal film consisting of the first single crystal film layer and the second single crystal film layer is prepared by adopting a symmetrical stress compensation technology, and the problems of curling and cracking of the prepared film are avoided based on stress compensation; so that a thin film having ultra-thin, ultra-light, flexible and self-supporting characteristics can be obtained; meanwhile, a large-area flexible single crystal film can be prepared by the scheme of the invention; in addition, the ion beam stripping process is adopted to form the single crystal film, the obtained two same or different single crystal films are integrated in a bonding mode, the requirement on the lattice matching degree is almost eliminated, and the film material and the selection are flexible; the defects can be controlled in a very small thickness range near the interface, the quality of crystal lattices in the film is not influenced, and the material performance can be ensured even if the thickness of the stripped film is very small. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (4)
1. A method for preparing a flexible monocrystalline film based on stress compensation is characterized by comprising the following steps:
1) providing a first single crystal substrate and a second single crystal substrate, wherein the first single crystal substrate is provided with a first ion implantation surface, the second single crystal substrate is provided with a second ion implantation surface, and the first single crystal substrate and the second single crystal substrate are heterogeneous substrates;
2) performing a first ion implantation on the first single crystal substrate from the first ion implantation surface to form a first defect layer in the first single crystal substrate, performing a second ion implantation on the second single crystal substrate from the second ion implantation surface to form a second defect layer in the second single crystal substrate, and adjusting stress generated in the first single crystal substrate and the second single crystal substrate by controlling at least one of an ion species implanted and an ion dose implanted during the ion implantation such that stress generated in the first single crystal substrate based on the first ion implantation is substantially the same as stress generated in the second single crystal substrate based on the second ion implantation, wherein stress generated in the first single crystal substrate by the first ion implantation has a microscopic magnitude and distribution substantially the same as stress generated in the second single crystal substrate by the second ion implantation has a microscopic magnitude and distribution, so that the stresses formed in the two substrates are counteracted;
3) bonding the first ion implantation surface and the second ion implantation surface in a direct bonding mode, wherein the first ion implantation surface is in contact with the second ion implantation surface; and
4) and peeling part of the first single crystal substrate along the first defect layer to obtain a first single crystal thin film layer, peeling part of the second single crystal substrate along the second defect layer to obtain a second single crystal thin film layer, so as to obtain the flexible single crystal thin film consisting of the bonded first single crystal thin film layer and the bonded second single crystal thin film layer, wherein the first single crystal thin film layer forms a first functional layer, and the second single crystal thin film layer forms a second functional layer, and the peeling is carried out by adopting a wet etching process, and the first defect layer and the second defect layer are simultaneously etched.
2. The method for preparing a flexible single crystal thin film based on stress compensation as claimed in claim 1, wherein in step 2), the first ion implantation is performed in a manner including any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen ion implantation, and the second ion implantation is performed in a manner including any one of hydrogen ion implantation, helium ion implantation, co-implantation of hydrogen ions and helium ions, and oxygen implantation.
3. The method for preparing the flexible monocrystalline film based on stress compensation as claimed in claim 1, further comprising the steps between step 1) and step 2): and cleaning at least one of the first ion implantation surface and the second ion implantation surface.
4. A flexible single crystal thin film based on stress compensation manufactured by the method for manufacturing a flexible single crystal thin film according to any one of claims 1 to 3, wherein the flexible single crystal thin film comprises a first single crystal thin film layer and a second single crystal thin film layer, the second single crystal thin film layer is bonded to the surface of the first single crystal thin film layer so that the stress in the first single crystal thin film layer and the stress in the second single crystal thin film layer are offset with each other, the first single crystal thin film layer comprises a first single crystal functional layer, the second single crystal thin film layer comprises a second single crystal functional layer, and the first single crystal thin film layer and the second single crystal thin film layer are heterogeneous substrates.
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|---|
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| Photodegradation of 4-chlorophenoxyacetic acid under visible LED activated N-doped TiO2 and the mechanism of stepwise rate increment of the reused catalyst;Abdelhaleem, Amal; Chu, Wei;《JOURNAL OF HAZARDOUS MATERIALS》;20170915;第338卷;第491-501页 * |
| 晶圆键合技术在LED应用中的研究进展;罗超等;《半导体技术》;20171203(第12期);全文 * |
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