CN108010834A - A kind of flexible unitary film and its preparation and transfer method - Google Patents
A kind of flexible unitary film and its preparation and transfer method Download PDFInfo
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- CN108010834A CN108010834A CN201711170411.5A CN201711170411A CN108010834A CN 108010834 A CN108010834 A CN 108010834A CN 201711170411 A CN201711170411 A CN 201711170411A CN 108010834 A CN108010834 A CN 108010834A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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Abstract
The present invention relates to film preparing technology, and in particular to a kind of flexible unitary film and its preparation and transfer method.The present invention carries out homogeneity bonding using the identical monocrystalline injection wafer of two panels, then high annealing is to realize the stripping of film, one layer is bonded layer among having prepared, upper and lower two layers sandwich structure for identical film layer, the fexible film obtained is peeled off because use homogeneity is bonded and internal stress is low, film quality is good, and has self-supporting mechanism, which can be transferred to other any substrates by follow-up low temperature process.The requirement of para-linkage technique is low during flexible unitary film preparation provided by the invention, reproducible, is adapted to industrialized production.And it can be transferred to by follow-up low temperature process on the substrate of any kind.
Description
Technical field
The present invention relates to film preparing technology, and in particular to a kind of flexible unitary film and its preparation and transfer method.
Background technology
Flexible unitary thin-film material have the advantages that it is soft, deformable, light, portable, in RFID, display, OLED, sensing
The application fields such as device, photovoltaic, memory, battery have been obtained for widely applying.The preparation skill of existing flexible unitary thin-film material
Art mainly using physically or chemically deposition technique by film preparation on flexible substrate material, and the choosing of flexible substrate material
Selecting influences significantly the performance of flexible electronic thin-film material.The flexible substrate material used at present mainly include plastics, stainless steel,
The baseplate materials such as ultra-thin glass, paper substrate, these flexible base boards are difficult to meet single crystalline Si, Group III-V semiconductor thin-film material
With the requirement of the film material with function to lattice match such as dielectric, photoelectricity, magnetism, therefore in deposition flexible electronic thin-film material
During, it can not realize that extensional mode is grown, heteromorphs are presented in the fexible film obtained, and film lattice defect concentration is high, property
Can be poor.
SOITEC SILICON ON INSULATOR in 2004 disclose a kind of side for shifting prepare compound thin-film material
Method (EP1429381A2)：H is carried out to single crystal wafers+Or He+Ion implanting, injection ion is produced in inside wafer to be assembled and is formed
Defect layer, the depth of defect layer are determined by Implantation Energy；Wafer after injection and another substrate are subjected to wafer bonding and one
Determine to anneal at temperature, then wafer will produce splitting along defect layer, and finally obtain thin film material layer on substrate.By
In the layer film it is actually to strip down and be transferred on substrate on wafer bulk, therefore the layer membrane materials in theory
Property is identical with wafer bulk, if selecting the single crystal wafers bulk of high quality to be injected and peeled off, can obtain
The monocrystal thin films material of high quality, and the thickness of film can be adjusted by Implantation Energy.What above-mentioned preparation method used
It is SiO2The bonding pattern of hydrophily bonding, i.e., wafer injection face and substrate surface respectively one layer of growth after ion implantation
SiO2Bonded layer, then grows one layer of SiO2The side of bonded layer carries out hydrophily bonding, but since hydrophily is bonded to SiO2Key
It is very high to close the surface smoothness requirement of layer, therefore adds process costs.
Method described in above-mentioned patent, the substrate material of use can be Si, Group III-V compound semiconductor, SiGe,
SiC and quartz, which only serves the effect of support film, and can not prepare flexible list using the substrate material of these types
Crystal film material.In addition, if the wafer of ion implanting is respectively different materials from substrate, particularly if two kinds of material heat
The coefficient of expansion can then produce larger thermal mismatch stress in the interface of wafer bonding, seriously affect monocrystalline there are notable difference
The performance of film, it is chipping to even result in film, it is difficult to completes transfer of the monocrystal thin films in foreign substrate and prepares.
The content of the invention
For above-mentioned problem or deficiency, to solve the growth restriction of flexible unitary thin-film material in flexible base board material
Material, and its bonding pattern be limited and subsequent transfer apply the problem of, the present invention provides a kind of flexible unitary film and its system
Standby and transfer method, the flexible unitary film of preparation is two-side film membrane, and similar sandwich structure, middle one layer is bonded layer, on
Lower two layers is film.This monocrystal thin films material has self supporting structure in itself, can arbitrarily bend, at the same can low-temperature bonding to its
His any substrate (including foreign substrate and curved substrate) to realize the transfer of film, thus can to avoid because of thermal mismatching and
The adverse effect brought.
Flexible unitary film provided by the invention is：Middle one layer is bonded layer, and upper and lower two layers is the three of identical film layer
Mingzhi's structure；The film layer is monocrystal material, thickness 200-2000nm.
The monocrystal material is lithium niobate, lithium tantalate, gallium nitride, GaAs or silicon.
Its preparation method is as follows：
Step 1, the single crystal wafers same to two panels carry out He+Or H+Ion implanting, implantation dosage 1E16-1E17ions/
cm2, injection thickness is 200-2000nm.
The ion implanting face side of step 1 gained two panels single crystal wafers, be bonded by step 2；
Step 3, by the bonding obtained by step 2 to carrying out annealing to strip at a temperature of 160-400 DEG C, can be prepared by sandwich
The flexible unitary film of structure.
Its transfer method is：
The flexible unitary film finally prepared is bonded on substrate by low-temperature bonding glue, you can realize transfer.
The present invention is using the identical monocrystalline injection wafer progress homogeneity bonding of two panels, and then high annealing is to realize film
Peel off, prepared among one layer be bonded layer, upper and lower two layers sandwich structure for identical film layer, the flexible thin obtained
Film is peeled off because use homogeneity is bonded and internal stress is low, and film quality is good, and has self-supporting mechanism, which can be by follow-up low
Warm process transfer is to other any substrates.
In conclusion flexible unitary film provided by the invention can large area peel off, be mono-crystalline structures, excellent performance, and
With self supporting structure；The fexible film of stripping reaches Nano grade, is adapted to the application of thin-film device.Para-linkage technique during preparation
Requirement it is low, it is reproducible, be adapted to industrialized production.And the substrate of any kind can be transferred to by follow-up low temperature process
On.
Brief description of the drawings
Fig. 1 is that embodiment step 1 single crystal wafers carry out the structure diagram after ion implanting；
Fig. 2 is the structure diagram after embodiment step 2 spin coating organic gel；
Fig. 3 is the structure diagram after the bonding of embodiment step 3；
Fig. 4 is the structure diagram that embodiment step 4 high annealing film is peeled off；
Fig. 5 is transferred to the structure diagram after substrate for flexible unitary film of the present invention.
Reference numeral：1- injection lithium niobate monocrystal wafer, 2- benzocyclobutenes (BCB) organic gel, 3- peel off after list
Remaining single crystal wafers, 5- low-temperature bondings glue, 6- substrates after brilliant film, 4- are peeled off.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
Step 1, using ion implantation apparatus to lithium niobate monocrystal wafer carry out He+Ion implanting, the energy of injection are
150keV, implantation dosage are 2E16 (ions/cm2), ion beam line 1uA/cm2, injection thickness is 600nm dotted lines expression defect
The position of layer, as shown in Figure 1.
Step 2, wafer inject one side, if PECVD grow 2um silica, then growth conditions be：100 DEG C of temperature,
Power 100W, pressure 600mT, silane flow velocity 250sccm, nitrogen flow rate 150sccm.If spin coating BCB glue, BCB glue thickness controls
System is between 3um, as shown in Figure 2.
If step 3, wafer injection face grow silica, the one side of two panels wafer growth silica carries out hydrophily
Bonding；If wafer injection face spin coating is bonded for organic gel, the one side of two wafer spin coating organic gels, as shown in Figure 3.
Step 4, hydrophily bonding bonding in tube furnace 400 DEG C of 2-5 hours of processing realize the stripping of film with
And the bonding of enhancing bond strength or spin coating BCB glue in tube furnace 250 DEG C of one hours of processing to realize the stripping of film
It is fully cured from BCB glue, as shown in Figure 4.
To sum up, it is key that the present invention has prepared middle one layer using ion implantation technique and wafer bonding lift-off technology
Layer is closed, the upper and lower two layers flexible unitary thin-film material for the sandwich structure of identical film layer, it is thin to overcome conventional flex monocrystalline
Membrane material is limited the shortcomings that base material；It can arbitrarily bend with self supporting structure, can be transferred to by low temperature process at the same time
Any substrate.The requirement of para-linkage technique is low during preparation, reproducible, is adapted to industrialized production.
Claims (4)
- A kind of 1. flexible unitary film, it is characterised in that：Middle one layer be bonded layer, upper and lower two layers sandwich structure for identical film layer；The film layer is monocrystal material, thick Spend 200-2000nm.
- 2. flexible unitary film as claimed in claim 1, it is characterised in that：The monocrystal material is lithium niobate, lithium tantalate, nitridation Gallium, GaAs or silicon.
- 3. the preparation method of flexible unitary film as claimed in claim 1 is as follows：Step 1, the single crystal wafers same to two panels carry out He+Or H+Ion implanting, implantation dosage 1E16-1E17ions/cm2, Injection thickness is 200-2000nm；The ion implanting face side of step 1 gained two panels single crystal wafers, be bonded by step 2；Step 3, by the bonding obtained by step 2 to carrying out annealing to strip at a temperature of 160-400 DEG C, can be prepared by sandwich structure Flexible unitary film.
- 4. flexible unitary film as claimed in claim 1, its transfer method are：Flexible unitary film is passed through into low-temperature bonding glue key Together on substrate, you can realize transfer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711170411.5A CN108010834A (en) | 2017-11-22 | 2017-11-22 | A kind of flexible unitary film and its preparation and transfer method |
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| CN201711170411.5A CN108010834A (en) | 2017-11-22 | 2017-11-22 | A kind of flexible unitary film and its preparation and transfer method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166792A (en) * | 2018-08-17 | 2019-01-08 | 中国科学院上海微系统与信息技术研究所 | Method and flexible unitary film based on stress compensation preparation flexible unitary film |
| CN109950392A (en) * | 2019-03-13 | 2019-06-28 | 电子科技大学 | Have fluted monocrystal thin films preparation method, monocrystal thin films and resonator |
| CN109989111A (en) * | 2019-03-13 | 2019-07-09 | 电子科技大学 | Preparation method, monocrystal thin films and the resonator of spliced small size monocrystal thin films |
| CN110212882A (en) * | 2019-05-13 | 2019-09-06 | 电子科技大学 | The preparation method and cavity type bulk acoustic wave resonator of cavity type bulk acoustic wave resonator |
| CN111916345A (en) * | 2020-09-11 | 2020-11-10 | 北京华卓精科科技股份有限公司 | Wafer bonding method and device |
| CN112271249A (en) * | 2020-10-23 | 2021-01-26 | 中北大学 | Low-temperature wafer bonding and thin-film processing method for silicon-based/ferroelectric single crystal material |
| CN112467024A (en) * | 2020-11-24 | 2021-03-09 | 上海新微科技集团有限公司 | Preparation method of heterostructure thin film substrate |
| CN114975096A (en) * | 2022-03-31 | 2022-08-30 | 北京清芯昇能半导体有限公司 | Bonding material and preparation method thereof, and semiconductor device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316098A (en) * | 1999-06-30 | 2001-10-03 | 法国原子能委员会 | Method for producing thin membrane and resulting structure with membrane |
| CN1541406A (en) * | 2001-04-13 | 2004-10-27 | 原子能委员会 | Detachable substrate with controlled mechanical hold and method for prodn. thereof |
| US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
| CN1826434A (en) * | 2003-07-24 | 2006-08-30 | S.O.I.Tec绝缘体上硅技术公司 | Method of fabricating an epitaxially grown layer |
| CN103177935A (en) * | 2011-12-20 | 2013-06-26 | 法国原子能及替代能源委员会 | Method for manufacturing a flexible structure by transfers of layers and middle structure and flexible structure |
| TW201442168A (en) * | 2012-12-07 | 2014-11-01 | Shinetsu Chemical Co | Interposer substrate and method for manufacturing same |
| CN105895576A (en) * | 2016-07-06 | 2016-08-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing semiconductor material thick film by ion injection stripping |
-
2017
- 2017-11-22 CN CN201711170411.5A patent/CN108010834A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316098A (en) * | 1999-06-30 | 2001-10-03 | 法国原子能委员会 | Method for producing thin membrane and resulting structure with membrane |
| CN1541406A (en) * | 2001-04-13 | 2004-10-27 | 原子能委员会 | Detachable substrate with controlled mechanical hold and method for prodn. thereof |
| US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
| CN1826434A (en) * | 2003-07-24 | 2006-08-30 | S.O.I.Tec绝缘体上硅技术公司 | Method of fabricating an epitaxially grown layer |
| CN103177935A (en) * | 2011-12-20 | 2013-06-26 | 法国原子能及替代能源委员会 | Method for manufacturing a flexible structure by transfers of layers and middle structure and flexible structure |
| TW201442168A (en) * | 2012-12-07 | 2014-11-01 | Shinetsu Chemical Co | Interposer substrate and method for manufacturing same |
| CN105895576A (en) * | 2016-07-06 | 2016-08-24 | 中国科学院上海微系统与信息技术研究所 | Method for preparing semiconductor material thick film by ion injection stripping |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166792A (en) * | 2018-08-17 | 2019-01-08 | 中国科学院上海微系统与信息技术研究所 | Method and flexible unitary film based on stress compensation preparation flexible unitary film |
| CN109950392A (en) * | 2019-03-13 | 2019-06-28 | 电子科技大学 | Have fluted monocrystal thin films preparation method, monocrystal thin films and resonator |
| CN109989111A (en) * | 2019-03-13 | 2019-07-09 | 电子科技大学 | Preparation method, monocrystal thin films and the resonator of spliced small size monocrystal thin films |
| WO2020181815A1 (en) * | 2019-03-13 | 2020-09-17 | 电子科技大学 | Preparation method for spliced small-sized single crystal thin film, single crystal thin film and resonator |
| CN110212882A (en) * | 2019-05-13 | 2019-09-06 | 电子科技大学 | The preparation method and cavity type bulk acoustic wave resonator of cavity type bulk acoustic wave resonator |
| CN111916345A (en) * | 2020-09-11 | 2020-11-10 | 北京华卓精科科技股份有限公司 | Wafer bonding method and device |
| CN112271249A (en) * | 2020-10-23 | 2021-01-26 | 中北大学 | Low-temperature wafer bonding and thin-film processing method for silicon-based/ferroelectric single crystal material |
| CN112271249B (en) * | 2020-10-23 | 2023-09-15 | 中北大学 | Silicon-based/ferroelectric single crystal material low-temperature wafer bonding and thin film processing method |
| CN112467024A (en) * | 2020-11-24 | 2021-03-09 | 上海新微科技集团有限公司 | Preparation method of heterostructure thin film substrate |
| CN112467024B (en) * | 2020-11-24 | 2023-04-07 | 上海新硅聚合半导体有限公司 | Preparation method of heterostructure thin film substrate |
| CN114975096A (en) * | 2022-03-31 | 2022-08-30 | 北京清芯昇能半导体有限公司 | Bonding material and preparation method thereof, and semiconductor device |
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Application publication date: 20180508 |