CN109038214B - Vertical cavity surface emitting laser based on super surface and manufacturing method thereof - Google Patents

Vertical cavity surface emitting laser based on super surface and manufacturing method thereof Download PDF

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CN109038214B
CN109038214B CN201810838038.4A CN201810838038A CN109038214B CN 109038214 B CN109038214 B CN 109038214B CN 201810838038 A CN201810838038 A CN 201810838038A CN 109038214 B CN109038214 B CN 109038214B
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super
reflector
narrow
wavelength
surface structure
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CN109038214A (en
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夏金松
王玉西
曾成
袁帅
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

The invention discloses a vertical cavity surface emitting laser based on a super-surface structure, which comprises a lower broadband reflecting mirror, a gain medium and an upper narrowband reflecting mirror based on the super-surface structure; the reflection spectrum of the broadband reflector, the luminous spectrum of the gain medium and the narrow-band reflection wavelength of the super-surface reflector are overlapped, the gain medium is firstly excited by a pumping source, and then the broadband reflector and the narrow-band reflector based on the super-surface structure form a vertical resonant cavity to form stimulated radiation light amplification, so that laser emission of a vertical cavity surface is realized. The invention also discloses a manufacturing method, which comprises the following steps: designing and preparing a broadband reflector on a substrate material; the structure design and epitaxial growth of the gain medium; designing and preparing a narrow-band reflector based on a super-surface structure; and finally obtaining the vertical cavity surface emitting laser based on the super-surface structure. The vertical cavity surface emitting laser is simple and compact in structure, compatible with the processing technology of the existing semiconductor laser, simple in preparation technology, single longitudinal mode and good in stability.

Description

Vertical cavity surface emitting laser based on super surface and manufacturing method thereof
Technical Field
The invention belongs to the field of micro-nano manufacturing of semiconductor laser devices, and particularly relates to a vertical cavity surface emitting laser based on a super-surface structure and a manufacturing method thereof.
Background
Professor Kenichi Tga in 1977 proposes the concept of Vertical Cavity Surface-Emitting Laser (VCSEL) for the first time, and the main idea is to shorten the length of a Cavity to obtain a semiconductor Laser with single longitudinal mode output and improve the communication capability of light. The VCSEL is a novel semiconductor laser for emitting light from the direction vertical to the surface of a semiconductor substrate, and has the advantages of single longitudinal mode, small divergence angle, low threshold value, high modulation rate, circularly symmetric light spots, high coupling efficiency, small volume, capability of on-chip test, low price and the like. From the beginning of the 90 s in the 20 th century, research on VCSELs has been rapidly developed, VCSELs used in different fields have been continuously developed, VCSELs with different wavelengths mainly including 630-670 nm, 750-780 nm, 850nm, 980nm and 1310nm have almost the same development, and among them, VCSELs with 850nm and 980nm have been rapidly developed and have entered into the commercialization stage. The VECSEL has excellent laser characteristics, and is applied to more and more fields such as optical clocks, optical communication, laser radars, laser color display, high-speed laser printing, high-density optical storage, ultrafast lasers, nonlinear optics and the like. However, the conventional vertical cavity surface emitting laser still has the disadvantages of complex preparation process, small light emitting power, poor single-mode stability and the like, and particularly aims at the problem that the number of required Distributed Bragg Reflectors (DBRs) of the InP system long-wavelength vertical cavity surface laser is too large to cause too large series resistance.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a vertical cavity surface emitting laser based on a super-surface structure and a manufacturing method thereof, so that the technical problems of complex preparation process, small light output power, poor single-mode stability and the like of the traditional vertical cavity surface emitting laser due to the fact that thicker upper and lower Bragg reflector layers need to be grown are solved.
To achieve the above object, according to one aspect of the present invention, there is provided a vertical cavity surface emitting laser based on a super surface structure, including: the broadband reflection mirror is positioned on the lower surface of the gain medium, and the narrowband reflection mirror is positioned on the upper surface of the gain medium;
wherein, the reflection spectrum of the broadband reflector, the luminescence spectrum of the gain medium and the reflection spectrum of the narrow-band reflector have an overlapping relationship;
the surface of the narrow-band reflector is a super-surface structure with a periodic structure with sub-wavelength and no diffraction effect;
the narrow-band reflector and the wide-band reflector form a vertical resonant cavity so as to realize the vertical cavity surface emitting laser based on the super-surface structure.
Preferably, a plurality of spliced micro-nano graphic arrays are prepared on the super-surface structure, each micro-nano graphic array is formed by periodically arranging a plurality of identical micro-nano graphics, and the reflection wavelength of a single micro-nano graphic array is changed by regulating the size and the period of the micro-nano graphics in the micro-nano graphic array.
Preferably, the narrow-band mirror reflects a target wavelength and transmits a non-target wavelength through an in-plane micro-resonance mechanism of the super-surface structure, and a reflection wavelength range of the narrow-band mirror overlaps with a light-emitting wavelength of the gain medium and a lasing wavelength of the vertical cavity surface emitting laser.
Preferably, the reflection spectrum of the broadband reflector, the emission spectrum of the gain medium, and the reflection spectrum of the narrowband reflector have an overlapping relationship:
the light-emitting wavelength of the gain medium is overlapped with the reflection wavelength of the narrow-band reflector based on the super-surface structure, and the light-emitting wavelength of the gain medium is in the reflection spectrum range of the wide-band reflector.
Preferably, when the laser works, the gain medium is excited by a pumping source, and then the vertical resonant cavity formed by the broadband reflector and the narrowband reflector forms stimulated radiation light amplification, so that laser emission of a vertical cavity surface is realized, and finally the vertical cavity surface emitting laser based on the super-surface structure is realized.
Preferably, the micro-nano patterns in the micro-nano pattern array are arranged in a tetragonal lattice, a hexagonal lattice or a quasi-lattice.
Preferably, the micro-nano pattern is a nanopore, a nano column, a nano bead, a nano ring or a nano rod.
According to another aspect of the present invention, there is provided a method for fabricating a vertical cavity surface emitting laser based on a super-surface structure, comprising:
sequentially epitaxially growing a broadband reflector and a gain medium active region on a substrate to obtain a first intermediate structure;
depositing a target material layer on the first intermediate structure to obtain a second intermediate structure;
cleaning the substrate and spin-coating on the second intermediate structure to obtain a photoresist layer;
and forming a super-surface structure layout on the photoresist layer, and transferring the super-surface structure layout to the target material layer to obtain the narrow-band reflector layer based on the super-surface structure.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1. the laser has the advantages of simple and compact structure, simple and feasible preparation process, vertical cavity surface emission, low threshold, single longitudinal mode, good stability and the like. The optical fiber laser can be widely applied to the aspects of optical fiber communication, optical storage, optical gyros, optical display, laser printing, laser ranging, laser radars, medical treatment, environmental monitoring and the like.
2. According to the invention, the reflection wavelength of a single micro-nano graphic array can be changed by regulating the size and the period of a micro-nano graphic in the micro-nano graphic array, so that the vertical cavity surface emitting lasers with different wavelengths based on the super-surface structure can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser based on a super-surface structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a reflection spectrum of a Bragg broadband mirror according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the emission lines of a gain medium according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of reflection lines of a narrow-band mirror based on a super-surface structure according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a method for fabricating a VCSEL based on a super-surface structure according to an embodiment of the invention;
FIG. 6 is a schematic diagram of a fabrication process of a VCSEL based on a super-surface structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a narrow-band mirror based on a super-surface structure according to an embodiment of the present invention;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-substrate, 2-broadband reflector layer, 3-gain medium layer, 4-narrow-band reflector layer and 5-positive electron beam photoresist layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention relates to a special vertical cavity surface emitting laser based on a super-surface structure. The reflection spectrum of the broadband reflector, the light emission spectrum of the gain medium and the narrow-band reflection wavelength of the super-surface reflector are overlapped, the gain medium is firstly excited by a pumping source to form population inversion to emit laser, and then the laser is subjected to light amplification by a vertical resonant cavity formed by the broadband reflector and the narrow-band reflector based on the super-surface structure, so that the laser emission of the vertical cavity surface is realized. According to the mutual matching among different broadband reflector reflection wave bands, different light-emitting wavelength gain media and different narrow-band reflector reflection wavelengths based on the super-surface structure, the vertical cavity surface emitting lasers based on the super-surface structure and different wavelengths can be realized. The laser has the advantages of simple and compact structure, simple and feasible preparation process, vertical cavity surface emission, low threshold, single longitudinal mode, good stability and the like. The optical fiber laser can be widely applied to the aspects of optical fiber communication, optical storage, optical gyros, optical display, laser printing, laser ranging, laser radars, medical treatment, environmental monitoring and the like.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser based on a super-surface structure according to an embodiment of the present invention, which includes a gain medium, a broadband mirror located on a lower surface of the gain medium, and a narrow-band mirror located on an upper surface of the gain medium and based on the super-surface structure;
the reflection spectrum of the broadband reflector, the luminescence spectrum of the gain medium and the reflection spectrum of the narrow-band reflector have an overlapping relation; the surface of the narrow-band reflector is a super-surface structure with a periodic structure with sub-wavelength and no diffraction effect; the narrow-band reflector and the wide-band reflector form a vertical resonant cavity to realize the vertical cavity surface emitting laser based on the super-surface structure.
The super-surface structure is provided with a plurality of spliced micro-nano graphic arrays, each micro-nano graphic array is formed by periodically arranging a plurality of identical micro-nano graphics, and the reflection wavelength of a single micro-nano graphic array is changed by regulating the size and the period of the micro-nano graphics in the micro-nano graphic array.
As shown in fig. 1, 1 denotes a substrate, 2 denotes a bragg broadband mirror, 3 denotes a gain medium, and 4 denotes a narrow band mirror layer for realizing a super surface structure, and the narrow band mirror based on the super surface structure is prepared. FIG. 2 shows the reflection spectrum of the Bragg broadband reflector, the reflection band is 950 nm-1020 nm; FIG. 3 is a graph of the emission lines of a gain medium with a peak wavelength around 980 nm; fig. 4 shows reflection lines of a narrow-band mirror based on a super-surface structure, wherein the reflection peak is 980nm, and the three wavelengths have an overlapping relationship.
In the embodiment of the invention, the laser is a vertical cavity surface emitting device, and the laser emission of the vertical cavity surface is realized by designing and preparing a broadband reflector layer, a gain medium layer and a narrow-band reflector layer based on a super-surface structure, wherein the reflection spectrum of the broadband reflector, the luminous spectrum of the gain medium and the narrow-band reflection wavelength of the super-surface reflector are overlapped. The lasing wavelength of the laser depends on the combined action of a narrow-band reflector, a gain medium and a wide-band reflector based on a super-surface structure.
In the embodiment of the invention, the super-surface structure is a periodic structure with sub-wavelength, and the working principle of the super-surface structure is that when a light field vertically enters, the super-surface structure can excite clustered coherent oscillation of dipoles inside the super-surface of a medium, and the local oscillation of the light field interacts with the incident light so as to change the transmission and reflection characteristics of light. By designing and preparing a micro-nano structure graphic array with sub-wavelength and no diffraction effect, the in-plane micro-resonance mechanism of the super-surface structure can realize the reflection of target wavelength and the transmission of non-target wavelength, and a narrow-band reflector is formed. The target reflection wavelength of the narrow-band reflector is overlapped with the light-emitting wavelength of the gain medium and overlapped with the lasing wavelength of the laser. Meanwhile, the narrow-band reflector layer based on the super-surface structure can be designed to have an anti-reflection effect aiming at a target wavelength according to related dielectric materials, and the range of the target anti-reflection wavelength is overlapped with the light-emitting wavelength of the gain medium and the lasing wavelength of the laser, wherein the anti-reflection design takes the target wavelength as the center, has a certain width, and has the best anti-reflection effect at the target wavelength.
In the embodiment of the present invention, the broadband mirror may be a bragg mirror formed by periodically stacking dielectric materials with different refractive indexes, so as to achieve a high reflectivity for a target band and a low reflectivity for a non-target band, and may also be a total reflection mirror prepared by a metal material or a broadband mirror prepared by other materials, and the specific manner of the embodiment of the present invention is not limited uniquely. The broadband mirror reflection band is required to be able to cover the reflection wavelength of the mirror based on the super-surface structure.
In the embodiment of the present invention, the periodic arrangement of the pattern structure of the sub-wavelength periodic structure may be a tetragonal lattice, a hexagonal lattice, a quasi-lattice, or the like, and the specific manner of the periodic arrangement is not limited uniquely in the embodiment of the present invention.
In the embodiment of the present invention, the pattern structure of the sub-wavelength periodic structure may be one or a mixture of several of nano holes, nano columns, nano beads, nano rings and nano rods, and the specific manner adopted in the embodiment of the present invention is not limited uniquely.
Fig. 5 is a flowchart of a method for manufacturing a vertical cavity surface emitting laser based on a super surface structure according to an embodiment of the present invention, which includes the following steps:
(1) designing and preparing a broadband reflector;
(2) designing and preparing a gain medium;
(3) and designing and preparing a narrow-band reflector layer based on a super-surface structure.
As an alternative embodiment, the preparation of the broadband mirror in step (1) can be performed by using Metal-organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Metal-organic Vapor Phase Epitaxy (MOVPE), Liquid Phase Epitaxy (LPE), Chemical Beam Epitaxy (CBE), and Electron Beam Evaporator (EBE) growth techniques, and the specific manner is not limited in the examples.
As an alternative embodiment, the gain medium in step (2) may be prepared by using MOCVD, MBE, MOVPE, LPE, CBE, or other growth techniques, and the light emission peak wavelength of the gain medium is in the reflection spectrum range of the broadband mirror.
As an alternative embodiment, in the step (3), the design and preparation of the super-surface structure based narrow-band mirror layer may be performed by first performing growth and preparation of a relevant material layer by using Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), or CBE, and then performing exposure by using electron beam lithography, ultraviolet lithography, or focused Ion beam lithography, and after development and fixation, Etching may be performed by using Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE), or other Etching techniques. Different narrow-band reflection wavelengths can be realized according to the super-surface narrow-band reflectors based on different materials and different super-surface structure periods or structure sizes, the narrow-band reflection wavelengths are overlapped with the light-emitting wavelength of the gain medium, a vertical resonant cavity is formed by the narrow-band reflection reflectors and the narrow-band reflection wavelengths, and the vertical cavity surface emitting laser based on the super-surface structure is realized.
In the embodiment of the present invention, the method for manufacturing the vertical cavity surface emitting laser based on the super-surface structure is only used as a reference manufacturing method for implementing the laser, and is not limited to a specific manufacturing method and a manufacturing method that restricts other feasibility methods.
Fig. 6 is a schematic view of a process for manufacturing a vertical cavity surface emitting laser based on a super-surface structure according to an embodiment of the present invention, which is described as follows:
as shown in fig. 6 (a), the broadband mirror and the gain medium active region may be sequentially epitaxially grown on the substrate by MOCVD, where layer 1 is the substrate, layer 2 is the broadband mirror, and layer 3 is the gain medium active layer.
As shown in fig. 6 (b), on the basis of fig. 6 (a), silicon dioxide and silicon nitride may be deposited sequentially by PECVD, and the layer 4 is a narrow-band mirror layer composed of silicon dioxide and silicon nitride.
As shown in fig. 6 (c), on the basis of fig. 6 (b), the substrate is cleaned and spin-coated with the electron beam resist, and the positive electron beam resist ZEP520A is preferably used in the embodiment of the present invention, the spin-coating thickness is 270nm, and the curing is completed by baking for 3min at 180 ℃ by using a hot plate, and the layer 5 is the positive electron beam resist layer.
As shown in fig. 6 (d), on the basis of the graph (c), a super-surface structure layout is formed on the positive electron beam resist layer by an electron beam lithography process. The electron beam exposure can be performed by adopting EBPG 5000+ electron beam lithography system of Vistec corporation, accelerating voltage of 100KV, and electron beam exposure dose of 220 μ C/cm2Setting the scanning step length of the electron beam spot to be 4nm and selecting the electron beam current of 500 pA. After the exposure is finished, the sample is immersed in a xylene solution for development for 70s, then immersed in an isopropanol solution for fixation for 30s, taken out and dried by nitrogen.
As shown in fig. 6 (e), on the basis of the graph (d), the super-surface structure layout is transferred to the silicon nitride layer by ICP etching, so as to realize the preparation of the narrow-band mirror based on the super-surface structure. The etching process can adopt an Oxford instruments plasma System100 series Inductively Coupled Plasma (ICP) etching machine, the etching time is 14s, and gas SF is selected6+C4F8. Removing the residual photoresist after etching by adopting an N-methylpyrrolidone (NMP) degumming solution, then soaking in acetone to remove the organic solvent, finally washing with deionized water, and drying with a nitrogen gun.
Fig. 7 is a schematic diagram of a narrow-band reflector based on a super-surface structure, fig. 7 (a) is a schematic plan view of the narrow-band reflector based on the super-surface structure, fig. 7 (b) is a schematic principle diagram of the narrow-band reflector based on the super-surface structure, the super-surface structure has a sub-wavelength periodic structure, and the operation principle is that when a light field is vertically incident, clustered coherent oscillation of dipoles inside the super-surface of a medium can be excited, and the local oscillation of the light field interacts with incident light so as to change the transmission and reflection characteristics of light. By designing and preparing a micro-nano structure graphic array with sub-wavelength and no diffraction effect, the in-plane micro-resonance mechanism of the super-surface structure can realize the reflection of target wavelength and the transmission of non-target wavelength, and a narrow-band reflector is formed.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (7)

1. A vertical cavity surface emitting laser based on a super surface structure, comprising: the broadband reflection mirror is positioned on the lower surface of the gain medium, and the narrowband reflection mirror is positioned on the upper surface of the gain medium;
wherein, the reflection spectrum of the broadband reflector, the luminescence spectrum of the gain medium and the reflection spectrum of the narrow-band reflector have an overlapping relationship;
the surface of the narrow-band reflector is a super-surface structure with a periodic structure with sub-wavelength and no diffraction effect;
the narrow-band reflector and the wide-band reflector form a vertical resonant cavity so as to realize a vertical cavity surface emitting laser based on a super-surface structure;
the narrow-band reflector realizes the reflection of target wavelength and the transmission of non-target wavelength through an in-plane micro-resonance mechanism of the super-surface structure, and the reflection wavelength range of the narrow-band reflector is overlapped with the light-emitting wavelength of the gain medium and the lasing wavelength of the vertical cavity surface emitting laser.
2. The laser according to claim 1, wherein a plurality of spliced micro-nano graphic arrays are prepared on the super-surface structure, each micro-nano graphic array is formed by periodically arranging a plurality of identical micro-nano graphics, and the reflection wavelength of a single micro-nano graphic array is changed by regulating the size and the period of the micro-nano graphics in the micro-nano graphic array.
3. The laser of claim 2, wherein the reflection spectrum of the broadband mirror, the emission spectrum of the gain medium, and the reflection spectrum of the narrowband mirror have an overlapping relationship:
the light-emitting wavelength of the gain medium is overlapped with the reflection wavelength of the narrow-band reflector based on the super-surface structure, and the light-emitting wavelength of the gain medium is in the reflection spectrum range of the wide-band reflector.
4. The laser of claim 3, wherein, during operation, the gain medium is excited by a pump source, and the vertical cavity formed by the broadband reflector and the narrowband reflector amplifies the stimulated radiation light, so as to realize the laser emission of the vertical cavity surface, and finally realize the vertical cavity surface emitting laser based on the super-surface structure.
5. The laser according to claim 2, wherein the micro-nano patterns in the micro-nano pattern array are arranged in a tetragonal lattice, a hexagonal lattice or a quasicrystal.
6. The laser according to claim 2 or 5, wherein the micro-nano pattern is a nanopore, a nanocolumn, a nanosphere, a nanoring or a nanorod.
7. A method for manufacturing a vertical cavity surface emitting laser based on a super-surface structure is characterized by comprising the following steps:
sequentially epitaxially growing a broadband reflector and a gain medium active region on a substrate to obtain a first intermediate structure;
depositing a target material layer on the first intermediate structure to obtain a second intermediate structure;
cleaning the substrate and spin-coating on the second intermediate structure to obtain a photoresist layer;
forming a super-surface structure layout on the photoresist layer, and transferring the super-surface structure layout to the target material layer to obtain a narrow-band reflector layer based on a super-surface structure;
the narrow-band reflector realizes the reflection of target wavelength and the transmission of non-target wavelength through an in-plane micro-resonance mechanism of the super-surface structure, and the reflection wavelength range of the narrow-band reflector is overlapped with the light-emitting wavelength of the gain medium and the lasing wavelength of the vertical cavity surface emitting laser.
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CN109038214A (en) 2018-12-18

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