CN107257084A - A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser and preparation method thereof - Google Patents
A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- CN107257084A CN107257084A CN201710665578.2A CN201710665578A CN107257084A CN 107257084 A CN107257084 A CN 107257084A CN 201710665578 A CN201710665578 A CN 201710665578A CN 107257084 A CN107257084 A CN 107257084A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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Abstract
The present invention provides a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser and preparation method thereof, utilize micro-nano grating guide mode resonance effect, it regard the sub-wavelength guide mode resonance micro-cavity structure of high reflection, narrow resonance line width as a vertical cavity surface emitting laser part, so as to reach narrower laser linewidth, broader high anti-bandwidth, smaller volume and the purpose of the Polarization Control of stabilization.With the guided membrane resonance effects of micro-nano grating, calculated by EFFECTIVE MEDIUM THEORY, sub-wave length grating guide mode resonance micro-cavity structure of the resonant wavelength for 852nm weak modulation is designed, one layer is added between grating layer and ducting layer is used for the wall of control model line width, and pattern line width can reach below 1nm.This kind of narrow linewidth vertical cavity surface emitting laser has narrower laser linewidth, broader high anti-bandwidth, smaller volume and stable Polarization Control relative to traditional VCSEL.
Description
Technical field
The invention belongs to semiconductor laser field, and in particular to a kind of guide mode resonance grating narrow linewidth vertical cavity surface
Emitting laser, belongs to Atomic Physics, spectroscopy, quantum information, coherent communication, remote sensing and Technology of Precision Measurement field.
Background technology
Narrow linewidth vertical cavity surface emitting laser plays an important role in many optical systems, is widely used in atom thing
The technical fields such as reason, spectroscopy, quantum information, coherent communication, remote sensing and accurate measurement.With information age science and technology
High speed development, requirement of the people to core light source performance also more and more higher, such as in space satellite navigator fix, spacecraft
, it is necessary to which narrow laser frequency spectrum line width is traditional with the accurate measurement of the temporal frequency for achieving over femtosecond magnitude in the fields such as control guiding
VCSEL light source will can not increasingly meet requirement of the big data information system to narrow linewidth.Utilize the guide mode resonance of micro-nano grating
Sub-wave length grating guide mode resonance micro-cavity structure with ultrahigh-reflectivity, the weak modulation of narrow linewidth is applied to vertical cavity surface hair by effect
Penetrate on laser, as the upper reflector of vertical cavity surface emitting laser, whole guide mode resonance light is constituted with active area, lower DBR
The resonator of grid narrow linewidth vertical cavity surface emitting laser.By tuning the parameters of sub-wave length grating guide mode resonance microcavity,
Such as screen periods, dutycycle, duct thickness, microcavity thickness, refractive index are broader high anti-so as to reach narrower laser linewidth
Bandwidth, smaller volume and the purpose of the Polarization Control of stabilization.
The content of the invention
Object of the present invention is to provide a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser, it can make
Stable narrow-linewidth laser is provided during vertical cavity surface emitting laser lasing, using micro-nano grating guide mode resonance effect, if
Meter ultrahigh-reflectivity, narrow linewidth sub-wave length grating guide mode resonance micro-cavity structure with minority to p-type DBR be combined as vertical cavity
The upper reflector of surface-emitting laser, constitutes whole guide mode resonance grating narrow linewidth vertical-cavity surface-emitting with active area, lower DBR and swashs
The resonator of light device；Sub-wavelength guide mode resonance micro-cavity structure material and minority are grown in upper DBR by secondary epitaxy technology
On laser half-VCSEL, grating is prepared using standard semi-conductor processes, then sent out with vertical cavity surface by optimizing grating
The coupling of laser light field is penetrated, can make VCSEL that there is narrower laser linewidth, broader high anti-bandwidth, smaller volume
With stable Polarization Control, by tuning the structural parameters of grating, the linewidth narrowing of each wavelength can be met.
A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser, as shown in figure 1, the structure of the laser is under
And upper is N-type injecting electrode Au/Ge/Ni/Au (1), N-type GaAs substrates (2), Al0.1Ga0.9As/Al0.9Ga0.1As alternating growths
Lower DBR (3), active area Al0.2Ga0.8As/Al0.12In0.18Ga0.7As (4), oxidation current limiting layer Al0.98Ga0.02As(5)、
Al0.9Ga0.1As/Al0.1Ga0.9Upper DBR (6), the SiO of As alternating growths2Passivation layer (7), p-type injecting electrode Ti/Au (8), light
Grid substrate layer SiO2(9), grating substrate layer Al2O3(10), grating waveguide layer TiO2(11), grating spacings layer Al2O3(12), grating
Layer SiO2(13), Grating substrate layer SiO2(9), grating substrate layer Al2O3(10), grating waveguide layer TiO2(11), grating spacings layer
Al2O3(12), grating layer SiO2(13) it is sub-wave length grating guide mode resonance micro-cavity structure.
The sub-wave length grating guide mode resonance micro-cavity structure designed using the guide mode resonance effect of micro-nano grating has superelevation
Reflectivity, the pattern line width of ultra-narrow, and then realize the purpose that vertical cavity surface emitting laser output laser is narrow linewidth.
Guide mode resonance grating narrow linewidth vertical cavity surface emitting laser uses the DBR phases of guide mode resonance microcavity and less logarithm
The method of upper reflector is combined as, absorption loss is effectively reduced, and relative to conventional vertical cavity surface emitting lasers body
Product it is small, just with it is integrated.
By changing the space layer between grating layer and ducting layer and then changing the coupling between grating layer and ducting layer
Intensity is closed, and then narrows line width.
By changing the cycle of grating, realization is narrowed to different wave length.
The two media of arrowband guide mode resonance microcavity material grating is the less weak modulation design of refractive index, not only just
In the realization of narrow linewidth, while making line width insensitive to grating layer thickness, waveguide layer thickness, packing ratio change, device is more favorable for
The making of part.
There is sub-wave length grating guide mode resonance micro-cavity structure light wave to polarize selection index system, and then can realize the output of laser
Laser is the purpose of polarization.
Compared with existing vertical cavity surface emitting laser, the features of the present invention：By the weak tune with ultrahigh-reflectivity, narrow linewidth
The sub-wave length grating guide mode resonance micro-cavity structure of system is applied on vertical cavity surface emitting laser, and its is simple in construction, with narrower
Laser linewidth, broader high anti-bandwidth, smaller volume and stable Polarization Control.Beneficial to Atomic Physics, spectroscopy, quantum
The application of the technical fields such as information, coherent communication, remote sensing and accurate measurement.
Brief description of the drawings
Fig. 1 is a kind of structure and working principle of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser of the present invention
Schematic diagram；
Fig. 2 is the VCSEL extensions used in a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser of the present invention
Piece schematic diagram；
Fig. 3 is that a kind of table top etched of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser of the present invention shows
It is intended to；
A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser device oxidation limiting layer that Fig. 4 is the present invention is horizontal
Injection Current limiting holes schematic diagram is formed after to oxidation；
Fig. 5 is device growth SiO in a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser of the invention2It is blunt
Change structural representation after layer；
Fig. 6 is a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser photoetching of the present invention, sputtering sputtering Ti/
Au makes front electrode schematic diagram；
A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser device back side grinding that Fig. 7 is the present invention is thinned
And sputter Au/Ge/Ni/Au making backplate schematic diagrames；
Fig. 8 is a kind of sub- ripple of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser secondary epitaxy growth of the present invention
Long grating guide mode resonance microcavity material schematic diagram；
Fig. 9 is a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser standard semi-conductor processes system of the present invention
Standby optical grating construction schematic diagram；
Figure 10 is a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser sub-wave length grating guided mode of the present invention
Resonate micro-cavity structure schematic diagram；
Figure 11 is a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser sub-wavelength guide mode resonance of the present invention
Microcavity reflectivity curve schematic diagram；
Figure 12 is a kind of response of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser different wave length of the present invention
Curve synoptic diagram.
Embodiment
The narrow linewidth vertical cavity surface emitting laser that the present invention is designed can combine Fig. 2 -- Fig. 9, and its preparation side is discussed in detail
Method：
Step 1：Submitted first in n-type GaAs substrates as shown in Fig. 2 depositing (MOCVD) using Metalorganic Chemical Vapor
For growth n-Al0.1Ga0.9As layers and n-Al0.9Ga0.1As layers totally 36 pairs, constitute lower DBR；Then Al is grown0.2Ga0.8As/
Al0.12In0.18Ga0.7As quantum well structures constitute active area；Regrowth Al0.98Ga0.02As oxidation current limiting layers；Subsequently give birth to
Long minority is to Al0.9Ga0.1As/Al0.1Ga0.9The upper DBR of As；Finally growth doping concentration is 1x1019/cm-3P-type Al0.1Ga0.9As,
It is easy to form good Ohmic contact with injecting electrode；
Step 2：As shown in figure 3, the method being combined using photoetching and selective wet etching, which is corroded, a diameter of 60 μm
Cylindrical step, corrosion depth is to exposing Al0.98Ga0.02As oxidation limiting layers side wall；
Step 3：As shown in figure 4, carrying out horizontal oxygen to epitaxial wafer in step 2 by wet oxidation method using high temperature oxidation furnace
Change forms oxidation limiting layer, makes Injection Current limiting holes；
Step 4：As shown in figure 5, using plasma enhanced chemical vapor deposition PECVD (Plasma Enhanced
ChemicalVapor Deposition) deposit the thick SiO of 300nm2Passivation layer, and photoetching, corrode and laser light hole；
Step 5：As shown in fig. 6, sputtering Ti/Au formation laser injecting electrodes, and stripping photoresist exposes light hole；
Step 6：As shown in fig. 7, backing substrate is thinned into 150um, Au/Ge/Ni/Au backplates are sputtered；And 430
Anneal 35s at DEG C, metal level is formed good Ohmic contact with semi-conducting material, laser half-VCSEL areas have made
Into；
Step 7：Such as Fig. 8,500nm thickness SiO is grown successively on laser half-VCSEL using secondary epitaxy technology2,
200nm thickness Al2O3, 170nm thickness TiO2, 100nm thickness Al2O3, 70nm thickness SiO2；
Step 8：As shown in figure 9, using standard semi-conductor processes by designed sub-wave length grating parameter (cycle 439nm,
Dutycycle 0.5, etching depth 70nm) sub-wave length grating is prepared, complete element manufacturing.
The present invention the sub-wave length grating cycle be less than designed wavelength length, can be right in grating incidence and exit facet
Diffraction of light wave level is controlled, so as to avoid high level diffraction loss.
Structure in the present invention belongs to secondary epitaxy mode, and secondary life is carried out on the laser half-VCSEL made
Long to make, sub-wave length grating is prepared using standard semi-conductor processes.
Scheme of the present invention can be widely used in the laser of each wavelength by adjusting sub-wavelength grate structure parameter
In light source.
Above to a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser provided by the present invention and its system
Preparation Method is described in detail, and specific case used herein is set forth to the principle and embodiment of the present invention,
The explanation of above example is only intended to the method and its core concept for helping to understand the present invention, not thereby limits the present invention's
The scope of the claims, equivalent structure or equivalent flow conversion that every utilization description of the invention and accompanying drawing content are done, or directly or
Other related technical fields are used in indirectly, are similarly included in the scope of patent protection of the present invention.
Claims (10)
1. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser, it is characterised in that：The structure of the laser is under
And upper is N-type injecting electrode Au/Ge/Ni/Au (1), N-type GaAs substrates (2), Al0.1Ga0.9As/Al0.9Ga0.1As alternating growths
Lower DBR (3), active area Al0.2Ga0.8As/Al0.12In0.18Ga0.7As (4), oxidation current limiting layer Al0.98Ga0.02As(5)、
Al0.9Ga0.1As/Al0.1Ga0.9Upper DBR (6), the SiO of As alternating growths2Passivation layer (7), p-type injecting electrode Ti/Au (8), light
Grid substrate layer SiO2(9), grating substrate layer Al2O3(10), grating waveguide layer TiO2(11), grating spacings layer Al2O3(12), grating
Layer SiO2(13), Grating substrate layer SiO2(9), grating substrate layer Al2O3(10), grating waveguide layer TiO2(11), grating spacings layer
Al2O3(12), grating layer SiO2(13) it is sub-wave length grating guide mode resonance micro-cavity structure.
2. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
The sub-wave length grating guide mode resonance micro-cavity structure designed using the guide mode resonance effect of micro-nano grating has the reflectivity of superelevation, surpasses
Narrow pattern line width, and then realize the purpose that vertical cavity surface emitting laser output laser is narrow linewidth.
3. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
Guide mode resonance grating narrow linewidth vertical cavity surface emitting laser is combined conduct using the DBR of guide mode resonance microcavity and less logarithm
The method of upper reflector, effectively reduces absorption loss, laser small volume, just with it is integrated.
4. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
By changing the space layer between grating layer and ducting layer and then changing the stiffness of coupling between grating layer and ducting layer, enter
And narrow line width.
5. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
By changing the cycle of grating, realization is narrowed to different wave length.
6. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
The two media of arrowband guide mode resonance microcavity material grating is the less weak modulation design of refractive index, is not only convenient for narrow linewidth
Realization, while make line width to grating layer thickness, waveguide layer thickness, packing ratio change it is insensitive, be more favorable for the making of device.
7. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser according to claim 1, it is characterised in that：
There is sub-wave length grating guide mode resonance micro-cavity structure light wave to polarize selection index system, and then can realize that the output laser of laser is inclined
The purpose shaken.
8. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser system carried out using laser described in claim 1
Preparation Method, it is characterised in that
Step 1：(MOCVD) alternating growth n- first on n-type GaAs substrates is deposited using Metalorganic Chemical Vapor
Al0.1Ga0.9As layers and n-Al0.9Ga0.1As layers totally 36 pairs, constitute lower DBR；Then Al is grown0.2Ga0.8As/
Al0.12In0.18Ga0.7As quantum well structures constitute active area；Regrowth Al0.98Ga0.02As oxidation current limiting layers；Subsequently give birth to
Long minority is to Al0.9Ga0.1As/Al0.1Ga0.9The upper DBR of As；Finally growth doping concentration is 1x1019/cm-3P-type Al0.1Ga0.9As,
It is easy to form good Ohmic contact with injecting electrode；
Step 2：The method being combined using photoetching and selective wet etching, which is corroded, a diameter of 60 μm of cylindrical steps, corrosion
Depth is to exposing Al0.98Ga0.02As oxidation limiting layers side wall；
Step 3：Lateral oxidation formation oxidation limitation is carried out to epitaxial wafer in step 2 by wet oxidation method using high temperature oxidation furnace
Layer, makes Injection Current limiting holes；
Step 4：The thick SiO of 300nm are deposited using plasma enhanced chemical vapor deposition PECVD2Passivation layer, and photoetching, corrosion
Go out laser light hole；
Step 5：Ti/Au formation laser injecting electrodes are sputtered, and stripping photoresist exposes light hole；
Step 6：Backing substrate is thinned to 150um, Au/Ge/Ni/Au backplates are sputtered；And the 35s that annealed at 430 DEG C, make
Metal level forms good Ohmic contact with semi-conducting material, and laser half-VCSEL areas complete；
Step 7：Grow 500nm thickness SiO successively on laser half-VCSEL using secondary epitaxy technology2, 200nm thickness
Al2O3, 170nm thickness TiO2, 100nm thickness Al2O3, 70nm thickness SiO2；
Step 8：Sub-wave length grating is prepared by designed sub-wave length grating parameter using standard semi-conductor processes, device is completed
Part makes；Sub-wave length grating parameter is：Cycle 439nm, dutycycle 0.5, etching depth 70nm.
9. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser preparation method according to claim 8, its
It is characterised by, the sub-wave length grating cycle is that, less than designed wavelength length, light wave can be spread out in grating incidence and exit facet
Penetrate level to be controlled, so as to avoid high level diffraction loss.
10. a kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser preparation method according to claim 8, its
It is characterised by, laser structure belongs to secondary epitaxy mode, diauxic growth is carried out on the laser half-VCSEL made
Make, sub-wave length grating is prepared using standard semi-conductor processes.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109088307A (en) * | 2018-07-26 | 2018-12-25 | 华中科技大学 | Narrow line wide cavity laser based on super surface narrowband reflection mirror |
| CN110048305A (en) * | 2019-04-19 | 2019-07-23 | 北京工业大学 | Graphene-medium DBR single-mode vertical cavity surface emitting lasers and preparation method thereof |
| CN110289552A (en) * | 2019-06-26 | 2019-09-27 | 北京工业大学 | High light beam quality planar laser with vertical cavity array and preparation method based on sub-wave length grating waveguide |
| CN110429473A (en) * | 2019-08-06 | 2019-11-08 | 中国科学院半导体研究所 | Vertical cavity surface emitting laser and preparation method thereof |
| WO2020019574A1 (en) * | 2018-07-26 | 2020-01-30 | 华中科技大学 | Vertical-cavity surface-emitting laser employing metasurface structure, and manufacturing method for same |
| CN110957635A (en) * | 2020-02-25 | 2020-04-03 | 常州纵慧芯光半导体科技有限公司 | VCSEL device for realizing polarization control and preparation method thereof |
| CN112636173A (en) * | 2020-12-11 | 2021-04-09 | 北京工业大学 | Narrow-linewidth vertical-cavity surface-emitting laser and preparation method thereof |
| CN112701563A (en) * | 2020-12-29 | 2021-04-23 | 全磊光电股份有限公司 | Preparation method of BH laser MESA table top |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| CN102714395A (en) * | 2010-01-29 | 2012-10-03 | 惠普发展公司，有限责任合伙企业 | vertical-cavity surface-emitting lasers with non-periodic gratings |
| CN106058642A (en) * | 2016-06-29 | 2016-10-26 | 北京工业大学 | High-contrast-grating coupled-cavity narrow-spectral-line-width surface-emitting laser |
-
2017
- 2017-08-07 CN CN201710665578.2A patent/CN107257084A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| CN102714395A (en) * | 2010-01-29 | 2012-10-03 | 惠普发展公司，有限责任合伙企业 | vertical-cavity surface-emitting lasers with non-periodic gratings |
| CN106058642A (en) * | 2016-06-29 | 2016-10-26 | 北京工业大学 | High-contrast-grating coupled-cavity narrow-spectral-line-width surface-emitting laser |
Non-Patent Citations (2)
| Title |
|---|
| 刘文兴: ""可控线宽导模共振滤波器设计及其特性研究"", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
| 李硕 等: ""亚波长光栅调制的偏振稳定垂直腔面发射激光器研究"", 《物理学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109088307A (en) * | 2018-07-26 | 2018-12-25 | 华中科技大学 | Narrow line wide cavity laser based on super surface narrowband reflection mirror |
| CN109088307B (en) * | 2018-07-26 | 2019-10-25 | 华中科技大学 | Narrow line wide cavity laser based on super surface narrowband reflection mirror |
| WO2020019574A1 (en) * | 2018-07-26 | 2020-01-30 | 华中科技大学 | Vertical-cavity surface-emitting laser employing metasurface structure, and manufacturing method for same |
| CN110048305A (en) * | 2019-04-19 | 2019-07-23 | 北京工业大学 | Graphene-medium DBR single-mode vertical cavity surface emitting lasers and preparation method thereof |
| CN110289552A (en) * | 2019-06-26 | 2019-09-27 | 北京工业大学 | High light beam quality planar laser with vertical cavity array and preparation method based on sub-wave length grating waveguide |
| CN110429473A (en) * | 2019-08-06 | 2019-11-08 | 中国科学院半导体研究所 | Vertical cavity surface emitting laser and preparation method thereof |
| CN110957635A (en) * | 2020-02-25 | 2020-04-03 | 常州纵慧芯光半导体科技有限公司 | VCSEL device for realizing polarization control and preparation method thereof |
| CN112636173A (en) * | 2020-12-11 | 2021-04-09 | 北京工业大学 | Narrow-linewidth vertical-cavity surface-emitting laser and preparation method thereof |
| CN112636173B (en) * | 2020-12-11 | 2022-08-12 | 北京工业大学 | Narrow-linewidth vertical-cavity surface-emitting laser and preparation method thereof |
| CN112701563A (en) * | 2020-12-29 | 2021-04-23 | 全磊光电股份有限公司 | Preparation method of BH laser MESA table top |
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Application publication date: 20171017 |