CN108604588B - Semiconductor device and method for manufacturing semiconductor device - Google Patents
Semiconductor device and method for manufacturing semiconductor device Download PDFInfo
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- CN108604588B CN108604588B CN201680002078.4A CN201680002078A CN108604588B CN 108604588 B CN108604588 B CN 108604588B CN 201680002078 A CN201680002078 A CN 201680002078A CN 108604588 B CN108604588 B CN 108604588B
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
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- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
A semiconductor device, comprising: a first substrate (10) having: a first conductive layer (11), and a first electronic element (12) provided on the first conductive layer (11); and an intermediate layer (20) that is provided on the first substrate (10) and that has a plurality of connection heads and a resin substrate portion that fixes the plurality of connection heads, wherein the connection heads are exposed from the resin substrate portion on the first substrate (10) side and are connected to the first conductive layer (11) or the first electronic component (12).
Description
Technical Field
The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
Background
Conventionally, a semiconductor module including a sealing resin for sealing an electronic component such as a Chip (Chip) is widely known. As an example of such a conventional semiconductor module, japanese patent application laid-open publication No. 2011-114176 is cited. In japanese laid-open patent publication No. 2011-114176, a power semiconductor device is disclosed, which includes: a power semiconductor element; a pair of first metal members configured to sandwich a power semiconductor element; a pair of insulating layers laminated on the pair of heat dissipation plates with the pair of first metal members interposed therebetween; and a filling resin covering and filling the first power semiconductor element, the pair of first metal members, and the pair of insulating layers.
In such a semiconductor device, the number of connectors made of metal or the like is large. In addition, since there are very fine connectors among these connectors, the mounting becomes unstable. Therefore, it is necessary to use a plurality of jigs to mount the connection head in a stable state. Although it is conceivable to automatically mount the connectors using a mounting (Mounted) device, if the number of connectors is large, the process takes much time.
In view of the above, it is an object of the present invention to provide a semiconductor device and a method for manufacturing the semiconductor device, in which a plurality of connection terminals can be easily mounted.
Disclosure of Invention
The semiconductor device according to the present invention includes:
a first substrate having: a first conductive layer, and a first electronic element provided on the first conductive layer; and
an intermediate layer provided on the first substrate and having: a plurality of connectors, and a resin substrate portion for fixing the connectors,
the connector is exposed from the resin substrate part on one side of the first substrate and is connected with the first conductive layer or the first electronic element.
In the semiconductor device according to the present invention, the following may be employed:
wherein the connector is exposed from the resin substrate portion at a side opposite to the first substrate side, and a second electronic component is provided on the connector.
In the semiconductor device according to the present invention, the following may be employed:
wherein the intermediate layer has: a first intermediate layer, and a second intermediate layer disposed on the first intermediate layer,
wherein the first intermediate layer has: a first connector and a first resin substrate portion for fixing the first connector,
the second intermediate layer has: the second connector and fix the second resin base plate portion of second connector.
In the semiconductor device according to the present invention, the following may be employed:
wherein the first connection head protrudes from the first resin substrate portion toward a side where the second intermediate layer is provided,
the second resin substrate portion is provided with a second insertion portion for inserting the first connection head protruding from the first resin substrate portion.
In the semiconductor device according to the present invention, the following may be employed:
wherein the second connecting head protrudes from the second resin substrate portion toward a side on which the first intermediate layer is provided,
the first resin substrate portion is provided with a first insertion portion for inserting the second connection head protruding from the second resin substrate portion.
In the semiconductor device according to the present invention, the following may be employed:
wherein the first resin substrate portion and the second resin substrate portion are formed of different resin materials.
In the semiconductor device according to the present invention, the following may be employed:
wherein the connecting head protrudes from the resin substrate portion on a surface on one side of the first substrate or a surface on the opposite side of the first substrate.
In the semiconductor device according to the present invention, the following may be employed:
wherein a control portion is provided on the resin substrate portion of the intermediate layer.
In the semiconductor device according to the present invention, the following may be employed:
wherein the intermediate layer further comprises a molded resin portion covering the intermediate layer,
the molded resin portion and the resin substrate portion are formed of different resin materials.
In the semiconductor device according to the present invention, the following may be employed:
wherein the molded resin portion is made of a thermosetting resin, and the resin substrate portion is made of a thermoplastic resin.
In the semiconductor device according to the present invention, the following may be employed:
wherein the resin substrate portion has a protruding portion protruding toward the first substrate side at an edge of the first electronic element.
In the semiconductor device according to the present invention, the following may be employed:
wherein at least one of the plurality of connectors is connected with the first electronic element,
the area of the surface on the side opposite to the first electronic component is larger than the area of the surface on the side of the first electronic component.
A method for manufacturing a semiconductor device according to the present invention includes:
a first substrate preparation step of preparing a first substrate having a first conductive layer and a first electronic element provided on the first conductive layer; and
an intermediate layer mounting step of mounting an intermediate layer having a plurality of connection terminals and a resin substrate portion for fixing the plurality of connection terminals on the first substrate,
the connector is connected with the first conductive layer or the first electronic element.
Effects of the invention
The intermediate layer of the semiconductor device of the present invention has a plurality of bonding heads and a resin substrate portion for fixing the plurality of bonding heads, and the bonding heads are exposed from the resin substrate portion on the first substrate side. Therefore, the connection head positioned by the resin substrate portion can be connected to the first conductive layer by simply placing the connection head on the first substrate, and the semiconductor device can be easily manufactured.
Brief description of the drawings
Fig. 1 is a sectional view showing a schematic configuration of a semiconductor device according to an embodiment of the present invention.
Fig. 2(a) is a top plan view of the first substrate of the semiconductor device according to the embodiment of the present invention, and fig. 2(b) is a perspective view of the embodiment shown in fig. 2 (a).
Fig. 3(a) is a top plan view of the first substrate shown in fig. 2 on which the first intermediate layer is mounted, and fig. 3(b) is a perspective view of the embodiment shown in fig. 3 (a).
Fig. 4(a) is a top plan view of the first intermediate layer shown in fig. 3 with the second conductive layer and the second electronic component mounted thereon, and fig. 4(b) is a perspective view of the embodiment shown in fig. 4 (a).
Fig. 5(a) is a top plan view of the first intermediate layer, the second conductive layer, and the second electronic component shown in fig. 4, after the second intermediate layer is mounted thereon, and fig. 5(b) is a perspective view of the form shown in fig. 5 (a).
Fig. 6(a) is a top plan view of the second intermediate layer shown in fig. 5 on which the second substrate is mounted, and fig. 6(b) is a perspective view of the form shown in fig. 6 (a).
Fig. 7(a) is a top plan view of the first substrate, the first intermediate layer, the second intermediate layer, and the second electric substrate shown in fig. 6 after resin encapsulation, and fig. 7(b) is a perspective view of the form shown in fig. 7 (a).
Fig. 8(a) is a top plan view of the surface side of the first intermediate layer used in the embodiment of the present invention, and fig. 8(b) is an oblique view of the first intermediate layer shown in fig. 8 (a).
Fig. 9(a) is a top plan view of the surface side of the second intermediate layer used in the embodiment of the present invention, and fig. 9(b) is an oblique view of the second intermediate layer shown in fig. 9 (a).
Fig. 10(a) is a bottom plan view of the back surface side of the first intermediate layer used in the embodiment of the present invention, and fig. 10(b) is a bottom plan view of the back surface side of the second intermediate layer used in the embodiment of the present invention.
Fig. 11 is a top plan view of a first intermediate layer used in a modification of the embodiment of the present invention.
Detailed Description
Composition (composition)
As shown in fig. 1, the semiconductor device according to the present embodiment includes: a first substrate 10, and an intermediate layer 20 disposed on the first substrate 10. As shown in fig. 2, the first substrate 10 includes: the electronic component includes a first substrate body 10a, a first conductive layer 11 provided on the first substrate body 10a, a first electronic element 12 provided on the first conductive layer 11, and a connection terminal 13 provided on the first conductive layer 11 and extending in a width direction (vertical direction in fig. 2 (a)). In the embodiment shown in fig. 2, the two first electronic components 12 are arranged line-symmetrically with respect to a straight line passing through the center of the semiconductor device and extending in the width direction. The first electronic component 12 is provided with terminals 12a on its upper and lower surfaces, and solder 12b is placed on the terminals 12 a. As shown in fig. 1, a heat dissipation plate 19 may be provided on a lower surface of the first substrate body 10 a.
As shown in fig. 1, in the semiconductor device of the present embodiment, a second substrate 60 may be provided on the first substrate 10 side and the opposite side (upper side in fig. 1) with respect to the intermediate layer 20. The heat dissipation plate 69 may be provided on the upper surface of the second substrate body 60 a.
The intermediate layer 20 has: a plurality of connecting heads 31 and 41 (see fig. 8 and 9), and resin substrate portions 39 and 49 for fixing the plurality of connecting heads 31 and 41. A first connection terminal 31, which will be described later, is exposed from a first resin substrate portion 39, which will be described later, on the first substrate 10 side, and is connected to the first conductive layer 11 or the first electronic component 12. The first connection terminal 31 is also exposed from the first resin substrate portion 39 on the second substrate 60 side, and is connected to the second conductive layer 61 or the second electronic component 62.
As shown in fig. 1, the intermediate layer 20 may also have: a first intermediate layer 30, and a second intermediate layer 40 disposed on the first intermediate layer 30. As shown in fig. 8, the first intermediate layer 30 may also have: a first connector 31, and a first resin substrate portion 39 to which the first connector 31 is fixed. As shown in fig. 9, the second intermediate layer 40 may also have: a second connection head 41, and a second resin substrate portion 49 for fixing the second connection head 41. In the present embodiment, the description is given using the form in which the intermediate layer 20 has the first intermediate layer 30 and the second intermediate layer 40, but the intermediate layer 20 is not limited to this, and may be composed of one layer (may have one resin substrate portion) or three or more layers (may have three or more resin substrate portions). In the embodiment where the intermediate layer 20 includes the first intermediate layer 30 and the second intermediate layer 40, the connecting heads 31 and 41 include the first connecting head 31 and the second connecting head 41.
As shown in fig. 9(b), the second connection head 41 may protrude from the second resin substrate portion 49 toward the side where the first intermediate layer 30 is provided, and as shown in fig. 8, the first resin substrate portion 39 may be provided with a first insertion portion 39a into which the second connection head 41 protruding from the second resin substrate portion 49 is inserted. Alternatively to or in combination with such an embodiment, the first connector 31 may protrude from the first resin substrate portion 39 toward the side where the second intermediate layer 40 is provided, and the second resin substrate portion 49 may be provided with a second insertion portion into which the first connector 31 protruding from the first resin substrate portion 39 is inserted. In the present embodiment, a configuration in which a plurality of second connection terminals 41 (long protruding second connection terminals 43 described later) are inserted into the first insertion portion 39a while protruding from the second resin substrate portion 49 to the side where the first intermediate layer 30 is provided is described.
The first connector 31 may protrude from the first resin substrate portion 39 toward the first substrate 10 or the second intermediate layer 40, may penetrate the first resin substrate portion 39, or may be flush with the second resin substrate portion 49 without protruding from the first resin substrate portion 39. That is, the plurality of first connectors 31 may include one or more of the protruding type first connector 33, the penetrating type first connector, and the same planar type first connector.
For example, in the embodiment shown in fig. 8, the plurality of first connection terminals 31 include a protruding first connection terminal 33 protruding from the first resin substrate portion 39 toward the first substrate 10. In the embodiment shown in fig. 8, four protrusion-type first connection heads 33 are provided.
In the embodiment shown in fig. 8, the projecting first coupling head 33 has a projecting first coupling head 33a for placement. As shown in fig. 4, the second electronic component 62 is provided on the upper surface of the mounting projection type first connector 33 a. Specifically, the projection-type first connector 33 includes two projection-type first connectors 33a for placement. In the upper surface of each of the placement projection type first connection terminals 33a, a second electronic component 62 is provided via a second conductive layer 61.
The second connection head 41 shown in fig. 9 may protrude from the second resin substrate portion 49 toward the first intermediate layer 30 or toward the opposite side of the first intermediate layer 30, or may pass through the second resin substrate portion 49, or may be flush with the second resin substrate portion 49 without protruding from the second resin substrate portion 49. That is, the plurality of second connectors 41 may include one or more of the protruding second connector 43, the penetrating second connector, and the same planar second connector.
In the embodiment shown in fig. 9, the second connecting head 41 includes, as an example, protruding second connecting heads 43 and 45 protruding from the second resin substrate portion 49 toward the first intermediate layer 30 (the paper back surface side in fig. 9 a). The protruding second connectors 43 and 45 include: a protruding second connector 43 inserted into the first insertion portion 39a, and a protruding second connector 45 shorter than the protruding second connector 43.
In the present embodiment, the projecting second connection head 43 is inserted into the first insertion portion 39a of the first resin substrate portion 39 shown in fig. 8. That is, six long protruding type second connection heads 43 are inserted into the first insertion portions 39a, respectively.
Although the first resin substrate portion 39 and the second resin substrate portion 49 may be formed of the same resin material, the present invention is not limited thereto, and the first resin substrate portion 39 and the second resin substrate portion 49 may be formed of different resin materials.
The first electronic component 12 and the second electronic component 62 in this embodiment may be power devices. As an example of the power device, a switching device may be cited. Specifically, as an example of the power device, there are: an FET such as a MOSFET, a bipolar transistor, an IGBT, and the like, and a MOSFET can be given as a typical example.
As shown in fig. 11, a control unit 80 including an IC chip 81, a resistor 82, a capacitor 83, and the like may be provided on the resin substrate portions 39, 49 of the intermediate layer 20. The control unit 80 may be provided on the first intermediate layer 30, may be provided on the second intermediate layer 40, or may be provided on both the first intermediate layer 30 and the second intermediate layer 40. The control unit 80 may have a function of controlling the first electronic component 12 and the second electronic component 62, which are power devices.
As shown in fig. 1, the semiconductor device according to the present embodiment may further include a mold resin portion 90 (see fig. 7) covering the first substrate 10, the first intermediate layer 30, the second intermediate layer 40, and the second substrate 60. The molded resin portion 90 and the resin substrate portions 39, 49 may be formed of different resin materials. In the case where the resin material of the first resin substrate portion 39 is different from that of the second resin substrate portion 49, the resin material of the mold resin portion 90 may be the same as the second resin substrate portion 49, different from that of the first resin substrate portion 39, or may be the same as the first resin substrate portion 39, different from that of the second resin substrate portion 49.
For example, the mold resin portion 90 may be made of thermosetting resin, and the resin substrate portions 39 and 49 may be made of thermoplastic resin.
The thermoplastic resin is not particularly limited, and a material such as plastic can be used. Examples of the thermoplastic resin include: polyethylene (Polyethylene), Polypropylene (Polypropylene), Poly-4-Methylpentene-1 (Poly-4-Methylpentene-1), Ionomer (Ionomer), Polystyrene (Polystyrene), AS resin, ABS resin, Polyvinyl chloride (Polyvinyl chloride), Polyvinylidene chloride (Polyvinylidene chloride), Methacrylic (Methacrylic) resin, Polyvinyl alcohol (Polyvinyl alcohol), ethylene-vinyl acetate copolymer (EVA), Polycarbonate (Polycarbonate), various nylons, various aromatic or aliphatic polyesters (Polyester), thermoplastic polyurethane (poriuurette), cellulosic plastic (Cellulose plastic), thermoplastic Elastomer (Elastomer), Polyarylate (Polyester) resin, Polyethylene terephthalate (Polyethylene terephthalate), Polyethylene terephthalate (Polybutylene terephthalate), Polybutylene terephthalate (Polybutylene terephthalate), Polyimide (Polyetherimide), Polyimide (Polyimide), and their use, Polysulfone (polysulfonene), Polyethersulfone (Polyethersulfone), Polyphenylene sulfide (polyphenylenesulfide), Polyphenylene ether (polyphenyleneether), Polybenzimidazole (polybenzzimidazole), Aramid (Aramid), poly-p-phenylenebenzobisoxazole), and the like.
The thermosetting resin is not particularly limited, and examples thereof include: epoxy resins, phenolic resins, unsaturated polyester resins, and the like.
The surface areas of the front surfaces (the second substrate 60 side surface) and the rear surfaces (the first substrate 10 side surface) of the connection heads 31 and 41 may be different. Specifically, the area of the surface of the connection head 31, 41 may be larger than the area of the back surface.
As will be clear from a comparison between the front surface side drawing of the first intermediate layer 30 shown in fig. 8 a and the rear surface side drawing of the first intermediate layer 30 shown in fig. 10a, in the present embodiment, as an example, the area of the front surface (the surface opposite to the first electronic component 12, that is, the upper surface) of the placement projecting first connector 33a is larger than the area of the rear surface (the surface on the first electronic component 12 side, that is, the lower surface). Therefore, the area can be minimized at a short distance from the first electronic component 12, and the heat generated by the first electronic component 12 can be dissipated by using a large surface of the placement projecting first connector 33 a. In the present embodiment, since the second electronic component 62 is disposed on the mounting projecting first connector 33a via the second conductive layer 61, the second electronic component 62 can be spaced from the surface of the mounting projecting first connector 33a by a certain distance. Further, the heat generated by the second electronic component 62 can be dissipated by using the large surface of the placement-use projecting first connector 33 a.
As will be clear from a comparison between the front surface side of the second intermediate layer 40 shown in fig. 9a and the rear surface side of the first intermediate layer 30 shown in fig. 10 b, in the present embodiment, as an example, the area of the front surface (the surface opposite to the second electronic component 62, i.e., the upper surface) of the short-length protruding second connecting head 45 is larger than the area of the rear surface (the surface on the second electronic component 62 side, i.e., the lower surface). Therefore, the area can be minimized at a short distance from second electronic component 62, and the heat generated by second electronic component 62 can be dissipated by the large surface of protruding second connector 45.
As shown in fig. 10a, a first projecting portion 38 is integrally formed on the back surface of the first resin substrate portion 39 (the surface on the first substrate 10 side) and projects toward the first substrate 10 side from the edge of the first electronic component 12, and the first projecting portion 38 prevents the first electronic component 12 from being unintentionally moved. Specifically, the first protruding portion 38 is provided on the back surface of the first resin substrate portion 39 in the width direction. Since there is a possibility that the first electronic component 12 may be inadvertently moved before Reflow (Reflow) of solder (not shown) located between the first conductive layer 11 and the first electronic component 12, such inadvertent movement can be prevented by providing the first protruding portion 38 in this manner.
As shown in fig. 10 b, a second projecting portion 48 is provided on the back surface (the surface on the first substrate 10 side) of the second resin substrate portion 49, the second projecting portion 48 being integrally molded and projecting toward the first intermediate layer 30 side on the edge of the second electronic component 62, and the second electronic component 62 can be prevented from being inadvertently moved by the second projecting portion 48. Specifically, eight second protruding portions 48 having a key shape are provided on the rear surface of the second resin substrate portion 49. Since there is a possibility that the second electronic component 62 may be inadvertently moved before reflow of solder (not shown) located between the second conductive layer 61 and the second electronic component 62, such inadvertent movement can be prevented by providing the second protruding portion 48 in this manner.
Method for producing
As an example of the method for manufacturing a semiconductor device in this embodiment, the following method is mentioned. Although the above description is repeated for simplicity, all the embodiments described in the above-mentioned "configuration" can be manufactured by the following "manufacturing method". The forms described in the following "manufacturing methods" are also applicable to the above "constitution".
As shown in fig. 2, a first substrate 10 having a first conductive layer 11 and a first electronic component 12 provided on the first conductive layer 11 is prepared. Solder 12b is placed on the terminals 12a of the first electronic component 12.
The intermediate layer 20 is mounted on the first substrate 10. When the intermediate layer 20 includes the first intermediate layer 30 and the second intermediate layer 40, the following steps are performed.
The first intermediate layer 30 is placed on the first substrate 10 (see fig. 3). As shown in fig. 8, the first intermediate layer 30 has a first connection head 33 of a protruding type protruding from the first resin substrate portion 39 toward the first substrate 10. The lower end of the protruding first connection terminal 33 is placed on the solder 12b provided on the terminal 12a of the first electronic component 12 or on the solder 11b provided on the first conductive layer 11 (see fig. 2). Specifically, the inner lower ends of the pair of placement-use projecting first connection terminals 33a (the lower ends positioned below the second electronic component 62) are placed on the solder 12b on the terminals 12a of the first electronic component 12, and the outer lower ends of the two placement-use projecting first connection terminals 33a are placed on the solder 11b on the first conductive layer 11 (see fig. 10 (a)). The projecting first tab 33, which is not the projecting first connection tab 33a for mounting, is mounted on the solder 11b provided on the first conductor layer 11 on both the inner and outer sides of the lower end thereof (see also fig. 10 (a)).
Next, as shown in fig. 4, a second electronic component 62 is provided on the upper surface of the placement-use projecting first connection head 33a via a second conductive layer 61. Solder 62b is provided on the upper surface of the second electronic component 62, and solder 61b is provided on the upper surface of the second conductive layer 61.
As described above, instead of disposing the second electronic component 62 on the first intermediate layer 30 after disposing the first intermediate layer 30 on the first substrate 10, the second electronic component 62 may be disposed on the first intermediate layer 30, and then the first intermediate layer 30 may be disposed on the first substrate 10. With such a configuration, it is advantageous in that the second electronic component 62 can be provided on the first intermediate layer 30 in a more stable state.
As described above, when the first intermediate layer 30 provided with the second electronic component 62 is placed on the first substrate 10, the second intermediate layer 40 is placed on the first intermediate layer 30 as shown in fig. 5. The first resin substrate portion 39 of the first intermediate layer 30 is provided with a first insertion portion 39a into which the second protrusion-type connection head 43 is inserted. Therefore, when the second intermediate layer 40 is placed on the first intermediate layer 30, the six projecting second connection heads 43 are inserted into the first insertion portions 39a, respectively. By placing the second interlayer 40 on the first interlayer 30 in this manner, a part of the lower end of the projecting second connecting head 45 of the second interlayer 40 is placed on the solder 62b on the upper surface of the second electronic component 62, and the remaining part thereof is placed on the solder 61b on the upper surface of the second conductive layer 61. Specifically, the lower end of the projecting second contact head 45a having a large cross-sectional area is placed on the solder 62b on the upper surface of the second electronic component 62, and the lower end of the projecting second contact head 45b having a small cross-sectional area is placed on the solder 61b on the upper surface of the second conductive layer 61 (see fig. 10 (b)).
Next, as shown in fig. 6, the second substrate 60 is placed on the upper surface of the second intermediate layer 40.
Then, as shown in fig. 7, will: the integrated components of the first substrate 10, the first intermediate layer 30, the second intermediate layer 40, and the second substrate 60 are heated at a temperature of 240 to 260 ℃ and subjected to solder reflow. Then, the integrated member is placed in a mold, and a sealing material as a material of the mold resin portion 90 is injected into the mold. Thus, a semiconductor device is manufactured.
Action and Effect
Next, a description will be given of a part of the above-described configuration that is not described in the operation and effect of the present embodiment.
The intermediate layer 20 included in the semiconductor device in the present embodiment includes a plurality of bonding heads 31 and 41 and resin substrate portions 39 and 49 (see fig. 8 and 9) for fixing the plurality of bonding heads 31 and 41, and the bonding heads 31 and 41 are exposed from the resin substrate portions 39 and 49 on the first substrate 10 side. Therefore, by placing the bonding heads 31 and 41 positioned by the resin substrate portions 39 and 49 on the first substrate 10, the bonding heads 31 and 41 can be connected to the first conductive layer 11, and the semiconductor device can be easily manufactured.
Further, although a jig is required when the connecting heads 31 and 41 are provided on the intermediate layer 20, the work using the jig is not complicated because the structure is simple.
In the present embodiment, in the case where the connection head (first connection head 31) is exposed from the resin substrate portion (first resin substrate portion 39) on the second substrate 60 side and is connected to the second electronic component 62 (see fig. 9), it is advantageous in that the second electronic component 62 can be stacked on the first electronic component 12.
In the present embodiment, when the intermediate layer 20 has the first intermediate layer 30 and the second intermediate layer 40, the first intermediate layer 30 has the first resin substrate portion 39 to which the first connecting head 31 is fixed, and the second intermediate layer 40 has the second resin substrate portion 49 to which the second connecting head 41 is fixed (see fig. 8 and 9), it is advantageous in that the connecting heads 31 and 41 of the first intermediate layer 30 and the second intermediate layer 40 can be positioned in advance with respect to the resin substrate portions 39 and 49.
In the present embodiment, in the case where the first connector 31 is projected from the first resin substrate portion 39 to the side where the second intermediate layer 40 is provided, and the second resin substrate portion 49 is provided with the second insertion portion into which the first connector 31 projected from the first resin substrate portion 39 is inserted, it is advantageous in that the relative positioning between the first intermediate layer 30 and the second intermediate layer 40 can be performed only by inserting the first connector 31 projected from the first resin substrate portion 39 into the second insertion portion.
On the other hand, in the case where the second connection head 41 is provided so as to protrude from the second resin substrate portion 49 toward the side where the first intermediate layer 30 is provided, and the first insertion portion 39a into which the second connection head 41 (protruding second connection head 43) protruding from the second resin substrate portion 49 is inserted is provided in the first resin substrate portion 39 (see fig. 8 and 9), it is advantageous in that the relative positioning between the first intermediate layer 30 and the second intermediate layer 40 can be performed by simply inserting the second connection head 41 (protruding second connection head 43) protruding from the second resin substrate portion 49 into the first insertion portion 39 a.
In the present embodiment, when the protruding first connection terminal 33 protruding toward the first substrate 10 side is used (see fig. 8), the thickness can be maintained between the first substrate 10 and the first intermediate layer 30, and therefore, the present embodiment is advantageous when the thickness needs to be maintained in relation to the arrangement of the first electronic component 12 and the like. In addition, in the case of using the protruding first connector 33 protruding toward the first substrate 10, it is also advantageous in that a good solder fillet can be formed at the edge of the protruding first connector 33. In the case where the first connector of the protruding type protruding toward the second intermediate layer 40 is used and is inserted into the second insertion portion of the second intermediate layer 40, it is advantageous in that the positioning function can be provided. In the case of using the through-type first connector, it is advantageous in that both the protruding first connector 33 protruding toward the first substrate 10 and the protruding first connector protruding toward the second intermediate layer 40 can be used. In the case of using the same planar first connector, it is advantageous in that the thickness in the thickness direction can be made thin.
In addition, in the case of adopting a configuration in which a plurality of lower ends are provided to the protruding connectors (protruding first connectors 33 in fig. 8) protruding toward the first substrate side, the first intermediate layer 30 can be mounted on the first substrate 10 in a stable state.
In the present embodiment, when the second connection head of the protruding type protruding toward the second substrate 60 side is used, the thickness can be maintained between the second substrate 60 and the second intermediate layer 40, and therefore, it is advantageous when the thickness needs to be maintained in relation to the arrangement of the second electronic component 62 and the like. In the case where the protruding second connection head 43 (long in length) protruding toward the first intermediate layer 30 is used and the first insertion portion 39a is provided in the first intermediate layer 30, it is advantageous in that the protruding second connection head 43 can be inserted into the first insertion portion 39a of the first intermediate layer 30, and a positioning function is provided. In addition, when the protruding second connection head 45 (having a short length) protruding toward the first intermediate layer 30 is used, it is advantageous in that the protruding second connection head 45 can be easily connected to the second conductive layer 61 and the second electronic component 62. In the case of using the penetrating second connector, it is advantageous in that both the protruding second connector protruding toward the second substrate 60 and the protruding second connector 43 protruding toward the first intermediate layer 30 can be used. In the case of using the same planar second connecting head, it is advantageous in that the thickness in the thickness direction can be made thin.
In the case where the first resin substrate portion 39 and the second resin substrate portion 49 are formed of different resin materials, it is advantageous to provide the first resin substrate portion 39 and the second resin substrate portion 49 with different functions. For example, when the thickness of the second resin substrate portion 49 is smaller than the thickness of the first resin substrate portion 39, a resin having a higher strength than the material of the first resin substrate portion 39 may be used as the material of the second resin substrate portion 49. In this case, PEEK (polyether ether ketone) may be used as the material of the second resin substrate portion 49, and PPS (polyphenylene sulfide) or PBT (polybutylene terephthalate) may be used as the material of the first resin substrate portion 39. According to this configuration, it is advantageous in that high strength can be achieved even in the case of the second resin substrate portion 49 having a small thickness, and the strength of the first resin substrate portion 39 and the strength of the second resin substrate portion 49 can be made equal to each other.
As shown in fig. 11, in the case of the configuration in which the control unit 80 is provided in the resin substrate portions 39 and 49 of the intermediate layer 20, the power unit and the control unit 80 can be brought very close to each other, and therefore, the possibility of erroneous operation can be reduced in advance. By providing such a control unit 80 in the semiconductor device, IPM (intelligent power module) can be realized.
In the case where the mold resin portion 90 and the resin substrate portions 39 and 49 are formed of different resin materials, it is advantageous that the resin substrate portions 39 and 49 located on the inner side and the mold resin portion 90 located on the outer side can perform different functions. For example, even when the molding resin portion 90 is made of a thermosetting resin, high positioning accuracy can be expected when a thermoplastic resin is used as the material of the resin substrate portions 39 and 49. That is, in the case of using thermosetting resin for the resin substrate portions 39 and 49, since the hardness is insufficient before heating, the positions of the connecting heads 31 and 41 may be displaced from predetermined positions. In this regard, when thermoplastic resin is used for the resin substrate portions 39 and 49, since the resin substrate portions have sufficient hardness before heating, the possibility of positional displacement of the connecting heads 31 and 41 can be reduced. As described using the present embodiment, by using a thermoplastic resin for the first resin substrate portion 39, deformation or displacement of the shape of the first insertion portion 39a can be reliably prevented, and by using a thermoplastic resin for the second resin substrate portion 49, displacement of the projecting second connecting head 43 can be reliably prevented.
Finally, the description of the embodiments, the modifications, and the disclosure in the drawings are merely examples for explaining the invention described in the claims, and therefore, the invention described in the claims is not limited to the description of the embodiments or the disclosure in the drawings.
Description of the symbols
10 first substrate
11 first conductive layer
12 first electronic component
20 middle layer
30 first intermediate layer
31 first connector
39 first resin substrate part
39a first insertion part
40 second intermediate layer
41 second connector
49 second resin substrate portion
60 second substrate
61 second conductive layer
80 control part
90 molded resin part
Claims (10)
1. A semiconductor device, comprising:
a first substrate having: a first conductive layer, and a first electronic element provided on the first conductive layer; and
an intermediate layer provided on the first substrate and having: a plurality of connectors, and a resin substrate portion for fixing the connectors,
wherein the connector is exposed from the resin substrate portion at one side of the first substrate and connected to the first conductive layer or the first electronic component,
the intermediate layer has: a first intermediate layer, and a second intermediate layer disposed on the first intermediate layer,
the first intermediate layer has: a first connector and a first resin substrate portion for fixing the first connector,
the second intermediate layer has: a second connector and a second resin substrate portion for fixing the second connector,
the first connector is projected from the first resin substrate portion to the side where the second intermediate layer is provided, the second resin substrate portion is provided with a second insertion portion for inserting the first connector projected from the first resin substrate portion, or the second connector is projected from the second resin substrate portion to the side where the first intermediate layer is provided, the first resin substrate portion is provided with a first insertion portion for inserting the second connector projected from the second resin substrate portion,
the semiconductor device is provided with a molded resin portion that covers the first intermediate layer, the second intermediate layer, the first connector, and the second connector, and that completely covers the first connector and the second connector.
2. The semiconductor device according to claim 1, wherein:
wherein the connector is exposed from the resin substrate portion at a side opposite to the first substrate side, and a second electronic component is provided on the connector.
3. The semiconductor device according to claim 1, wherein:
wherein the first resin substrate portion and the second resin substrate portion are formed of different resin materials.
4. The semiconductor device according to claim 1, wherein:
wherein the connecting head protrudes from the resin substrate portion on a surface on one side of the first substrate or a surface on the opposite side of the first substrate.
5. The semiconductor device according to claim 1, wherein:
wherein a control portion is provided on the resin substrate portion of the intermediate layer.
6. The semiconductor device according to claim 1, wherein:
wherein the mold resin portion and the resin substrate portion are formed of different resin materials.
7. The semiconductor device according to claim 6, wherein:
wherein the molded resin portion is made of a thermosetting resin, and the resin substrate portion is made of a thermoplastic resin.
8. A semiconductor device, comprising:
a first substrate having: a first conductive layer, and a first electronic element provided on the first conductive layer; and
an intermediate layer provided on the first substrate and having: a plurality of connectors, and a resin substrate portion for fixing the connectors,
wherein the connector is exposed from the resin substrate portion at one side of the first substrate and connected to the first conductive layer or the first electronic component,
the intermediate layer has: a first intermediate layer, and a second intermediate layer disposed on the first intermediate layer,
the first intermediate layer has: a first connector and a first resin substrate portion for fixing the first connector,
the second intermediate layer has: a second connector and a second resin substrate portion for fixing the second connector,
the first connector is projected from the first resin substrate portion to the side where the second intermediate layer is provided, the second resin substrate portion is provided with a second insertion portion for inserting the first connector projected from the first resin substrate portion, or the second connector is projected from the second resin substrate portion to the side where the first intermediate layer is provided, the first resin substrate portion is provided with a first insertion portion for inserting the second connector projected from the second resin substrate portion,
wherein the resin substrate portion has a protruding portion protruding toward the first substrate side at an edge of the first electronic element.
9. A semiconductor device, comprising:
a first substrate having: a first conductive layer, and a first electronic element provided on the first conductive layer; and
an intermediate layer provided on the first substrate and having: a plurality of connectors, and a resin substrate portion for fixing the connectors,
wherein the connector is exposed from the resin substrate portion at one side of the first substrate and connected to the first conductive layer or the first electronic component,
the intermediate layer has: a first intermediate layer, and a second intermediate layer disposed on the first intermediate layer,
the first intermediate layer has: a first connector and a first resin substrate portion for fixing the first connector,
the second intermediate layer has: a second connector and a second resin substrate portion for fixing the second connector,
the first connector is projected from the first resin substrate portion to the side where the second intermediate layer is provided, the second resin substrate portion is provided with a second insertion portion for inserting the first connector projected from the first resin substrate portion, or the second connector is projected from the second resin substrate portion to the side where the first intermediate layer is provided, the first resin substrate portion is provided with a first insertion portion for inserting the second connector projected from the second resin substrate portion,
wherein at least one of the plurality of connectors is connected with the first electronic element,
the area of the surface on the side opposite to the first electronic component is larger than the area of the surface on the side of the first electronic component.
10. A method for manufacturing a semiconductor device, comprising:
a first substrate preparation step of preparing a first substrate having a first conductive layer and a first electronic element provided on the first conductive layer; and
an intermediate layer mounting step of mounting an intermediate layer having a plurality of connection terminals and a resin substrate portion for fixing the plurality of connection terminals on the first substrate,
wherein the connector is connected with the first conductive layer or the first electronic element,
the intermediate layer has: a first intermediate layer, and a second intermediate layer disposed on the first intermediate layer,
the first intermediate layer has: a first connector and a first resin substrate portion for fixing the first connector,
the second intermediate layer has: a second connector and a second resin substrate portion for fixing the second connector,
the first connector is projected from the first resin substrate portion to the side where the second intermediate layer is provided, the first connector projected from the first resin substrate portion is inserted into a second insertion portion provided on the second resin substrate portion, or the second connector is projected from the second resin substrate portion to the side where the first intermediate layer is provided, the second connector projected from the second resin substrate portion is inserted into a first insertion portion provided on the first resin substrate portion,
the semiconductor device is provided with a molded resin portion that covers the first intermediate layer, the second intermediate layer, the first connector, and the second connector, and that completely covers the first connector and the second connector.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2016/053249 WO2017134774A1 (en) | 2016-02-03 | 2016-02-03 | Semiconductor device and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108604588A CN108604588A (en) | 2018-09-28 |
| CN108604588B true CN108604588B (en) | 2021-12-17 |
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| CN201680002078.4A Active CN108604588B (en) | 2016-02-03 | 2016-02-03 | Semiconductor device and method for manufacturing semiconductor device |
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| EP (1) | EP3413349A4 (en) |
| JP (1) | JP6240343B1 (en) |
| CN (1) | CN108604588B (en) |
| WO (1) | WO2017134774A1 (en) |
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| CN110289230B (en) * | 2019-06-17 | 2021-05-28 | 广东美的制冷设备有限公司 | Manufacturing tool and method of intelligent power module |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6240343B1 (en) | 2017-11-29 |
| EP3413349A1 (en) | 2018-12-12 |
| US20180219003A1 (en) | 2018-08-02 |
| CN108604588A (en) | 2018-09-28 |
| EP3413349A4 (en) | 2019-09-11 |
| WO2017134774A1 (en) | 2017-08-10 |
| JPWO2017134774A1 (en) | 2018-02-08 |
| US10461062B2 (en) | 2019-10-29 |
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