CN108198854A - Improve the field-effect transistor structure of RF switch characteristic - Google Patents
Improve the field-effect transistor structure of RF switch characteristic Download PDFInfo
- Publication number
- CN108198854A CN108198854A CN201810029240.2A CN201810029240A CN108198854A CN 108198854 A CN108198854 A CN 108198854A CN 201810029240 A CN201810029240 A CN 201810029240A CN 108198854 A CN108198854 A CN 108198854A
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- Prior art keywords
- effect transistor
- field
- transistor structure
- grid
- body area
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- 230000005669 field effect Effects 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000000694 effects Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of field-effect transistor structure for improving RF switch performance, and the field-effect transistor structure includes：Substrate is formed with device region and body area in the substrate；Wherein, channel region, source area and drain region are formed in the device region, grid is formed on the channel region；The body area links into an integrated entity with channel region, Schottky diode is connected between the grid and the body area, the cathode of Schottky diode connects the grid, anode connects the body area, the linearity, isolation and the breakdown voltage of field-effect transistor can be effectively improved, improves RF switch characteristic.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology field more particularly to a kind of field-effects for improving RF switch characteristic
Transistor arrangement.
Background technology
Silicon materials are the most widely used main raw material(s)s of semicon industry, and most of chips are manufactured with silicon chip,
Silicon-on-insulator (Silicon on isolation, SOI) is a kind of special silicon chip, and structure is mainly characterized by active
The characteristics of insertion each section of electrical connection between active layer and substrate of insulating layer between layer and substrate layer, this structure is insulation
The device of silicon class brings many advantages, such as ghost effect is small, speed is fast, low in energy consumption, integrated level is high, capability of resistance to radiation is strong on body.
Now, switching device is manufactured using soi process, generally, for specific electronics electricity
Road is applied, such as field effect transistor M OSFET.Quality factor FOM (Figure of merit) is for evaluating field effect transistor
The switch performance or technological ability of pipe MOSFET, it is the folding of Insertion Loss (Insertionloss) and isolation (isolation)
In, Insertion Loss is characterized with conducting resistance Ron, and isolation depends on shutdown capacitance Coff, for n type field effect transistor, such as Fig. 1 institutes
Show, define as grid voltage Vg=+VDD, source and drain resistance is conducting resistance Ron, defines the source as grid voltage Vg=-VDD
Alkali capacitance is leaked for shutdown capacitance Coff.In general, the lower quality factor FOM the better.It is existing but for some specific applications
The quality factor of some silicon-on-insulator RF switching devices is not met by requiring.
Invention content
The purpose of the present invention is to provide a kind of field-effect transistor structures for improving RF switch characteristic, solve existing skill
The problem of quality factor of RF switching devices cannot be met the requirements in art.
In order to solve the above technical problems, the present invention provides a kind of field-effect transistor structure for improving RF switch characteristic,
Schottky diode is connected between the grid of scene effect transistor and body area.
Further, the cathode of the Schottky diode connects the grid of the field-effect transistor structure, and anode connects
Meet the body area of the field-effect transistor structure.
Further, the field-effect transistor structure includes：Substrate is formed with device region and body area in the substrate；
Wherein, channel region, source area and drain region are formed in the device region, grid is formed on the channel region；The body area
It links into an integrated entity with channel region.
Further, the substrate is SOI substrate.
Further, the material of the grid is polysilicon gate or tantalum nitride metal.
Further, the forward conduction voltage of the Schottky diode is 0.2V~0.3V.
Compared with prior art, the field-effect transistor structure of improvement RF switch performance of the invention has beneficial below
Effect：
In the present invention, Schottky diode is connected between the grid of scene effect transistor and body area, can effectively be carried
The linearity, isolation and the breakdown voltage of high-field effect transistor improve RF switch characteristic.
Description of the drawings
Fig. 1 is the parameter schematic diagram for evaluating MOSFET quality factors in the prior art；
Fig. 2 is the equivalent circuit diagram of field-effect transistor structure in the prior art；
Fig. 3 is the equivalent circuit diagram of another field-effect transistor structure in the prior art；
Fig. 4 is the schematic diagram of field-effect transistor structure in one embodiment of the invention；
Fig. 5 is the equivalent circuit diagram of field-effect transistor structure in one embodiment of the invention.
Specific embodiment
The field-effect transistor structure of the improvement RF switch performance of the present invention is carried out below in conjunction with schematic diagram more detailed
Thin description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can change and be described herein
The present invention, and still realize the present invention advantageous effects.Therefore, description below should be understood as people in the art
Member's is widely known, and is not intended as limitation of the present invention.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The technical issues of in order to solve in background technology, refering to what is shown in Fig. 2, in the prior art in the body area of MOSFET structure
It is grounded by big resistance R, grid connects control voltage by big resistance R, which has the function of that radiofrequency signal is isolated.Into
One step, refering to what is shown in Fig. 3, MOSFET structure an indirect PN diodes for body area and grid control terminal with by big
The structure of resistance R ground connection is compared：When control voltage for it is positive when, body area by diode capacitance couple about 0.1 or
The positive voltage of 0.2V, increases channel current, reduces Ron.When it is negative to control voltage, diode forward conducting, body area electricity
Pressure can reduce with grid negative voltage, junction capacity, and so as to become smaller, the linearity also improves coff.
However, the radio-frequency performance of the mosfet transistor structure of above two method cannot still be met the requirements, the present invention carries
For a kind of field-effect transistor structure voltage and the linearity for improving RF switch performance, improve the field-effect of RF switch characteristic
Transistor arrangement connects Schottky diode between the grid of scene effect transistor and body area, compared to using common PN
The RF switch structure of junction diode, the conduction voltage drop of Schottky diode is lower, so under transistor off state, body area
Voltage it is lower, junction capacity smaller is also gentler, and so as to which coff is lower, the linearity is also more preferable, breakdown voltage higher；And transistor
The RF switch structure of opening, Ron and the common PN junction diode of use is substantially similar.The MOSFET crystal of the present invention
Pipe, without additional light shield and processing step, can obtain better isolation, breakdown voltage and the linearity.
The field-effect transistor structure of the improvement RF switch performance of the present invention is specifically described below in conjunction with attached drawing,
Fig. 4 is the schematic diagram of field-effect transistor structure, and Fig. 5 is the equivalent circuit diagram schematic diagram of field-effect transistor structure.
The field-effect transistor structure of the improvement RF switch characteristic of the present invention, grid and the body area of scene effect transistor
Between connect Schottky diode, wherein, the cathode of the Schottky diode connects the grid of the field-effect transistor structure
Pole, anode connect the body area of the field-effect transistor structure.
Specifically, with reference to shown in figure 4, Fig. 5, the field-effect transistor structure includes：Substrate 101, the substrate 101 are
SOI substrate.Device region 12 and body area 11 are formed in the substrate 101；Wherein, it is formed with channel region in the device region 12
102nd, source area S (being not shown in Fig. 2) and drain region D (being not shown in Fig. 2) is formed with grid (G) on the channel region 102
103；The body area 11 links into an integrated entity with channel region 102.Wherein, the grid 103 connect the Xiao Te with the body area 11
Based diode SD.
In the present embodiment, the material of the grid 103 is polysilicon gate or tantalum nitride metal material, grid and semiconductor
Body area 11 between connect Schottky diode SD, and the forward conduction voltage of the Schottky diode SD for 0.2V~
0.3V.Compared to the RF switch structure using common PN junction diode, the conduction voltage drop of Schottky diode is lower, so
Under transistor off state, the voltage in body area is lower, and junction capacity smaller is also gentler, and so as to which coff is lower, the linearity also becomes
Must, breakdown voltage higher, and the RF switch structure of transistor opening, Ron and the common PN junction diode of use is basic
Almost.The mosfet transistor of the present invention, without additional light shield and processing step, can obtain better isolation, hit
Wear voltage and the linearity.Also, the preparation method of the field-effect transistor of the present invention is compatible with prior art, does not need to be additional
Light shield, manufacture craft are simple.
In conclusion the field-effect transistor structure provided by the invention includes：Substrate is formed with device in the substrate
Part area and body area；Wherein, channel region, source area and drain region are formed in the device region, grid are formed on the channel region
Pole；The body area links into an integrated entity with channel region, and the grid connect the Schottky diode with the body area, can be effective
Raising field-effect transistor the linearity, isolation and breakdown voltage, improve RF switch characteristic.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (6)
- A kind of 1. field-effect transistor structure for improving RF switch characteristic, which is characterized in that the grid of scene effect transistor Schottky diode is connected between body area.
- 2. improve the field-effect transistor structure of RF switch characteristic as described in claim 1, which is characterized in that the Xiao Te The cathode of based diode connects the grid of the field-effect transistor structure, and anode connects the body of the field-effect transistor structure Area.
- 3. improve the field-effect transistor structure of RF switch characteristic as described in claim 1, which is characterized in that the field effect Transistor arrangement is answered to include：Substrate is formed with device region and body area in the substrate；Wherein, it is formed with ditch in the device region Road area, source area and drain region are formed with grid on the channel region；The body area links into an integrated entity with channel region.
- 4. improve the field-effect transistor structure of RF switch characteristic as claimed in claim 3, which is characterized in that the substrate For SOI substrate.
- 5. improve the field-effect transistor structure of RF switch characteristic as claimed in claim 3, which is characterized in that the grid Material be polysilicon gate or tantalum nitride metal.
- 6. improve the field-effect transistor structure of RF switch characteristic as described in claim 1, which is characterized in that the Xiao Te The forward conduction voltage of based diode is 0.2V~0.3V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029240.2A CN108198854A (en) | 2018-01-12 | 2018-01-12 | Improve the field-effect transistor structure of RF switch characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029240.2A CN108198854A (en) | 2018-01-12 | 2018-01-12 | Improve the field-effect transistor structure of RF switch characteristic |
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| Publication Number | Publication Date |
|---|---|
| CN108198854A true CN108198854A (en) | 2018-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810029240.2A Pending CN108198854A (en) | 2018-01-12 | 2018-01-12 | Improve the field-effect transistor structure of RF switch characteristic |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109150150A (en) * | 2018-08-06 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | A kind of radio-frequency switch circuit improving RF switch characteristic |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101090122A (en) * | 2006-06-16 | 2007-12-19 | 中国科学院微电子研究所 | Method for grid connecting with SOI dynamic threshold transistor through anti-off schottky |
| CN105161500A (en) * | 2015-08-11 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Insulator-on-silicon (SOI) radio-frequency device structure |
| CN105742366A (en) * | 2016-04-15 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | N-type dynamic threshold metal oxide semiconductor, fabrication method and method for increasing working voltage |
-
2018
- 2018-01-12 CN CN201810029240.2A patent/CN108198854A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101090122A (en) * | 2006-06-16 | 2007-12-19 | 中国科学院微电子研究所 | Method for grid connecting with SOI dynamic threshold transistor through anti-off schottky |
| CN105161500A (en) * | 2015-08-11 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Insulator-on-silicon (SOI) radio-frequency device structure |
| CN105742366A (en) * | 2016-04-15 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | N-type dynamic threshold metal oxide semiconductor, fabrication method and method for increasing working voltage |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109150150A (en) * | 2018-08-06 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | A kind of radio-frequency switch circuit improving RF switch characteristic |
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Application publication date: 20180622 |