CN108183380B - Integrated optoelectronic oscillator - Google Patents
Integrated optoelectronic oscillator Download PDFInfo
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- CN108183380B CN108183380B CN201810013244.1A CN201810013244A CN108183380B CN 108183380 B CN108183380 B CN 108183380B CN 201810013244 A CN201810013244 A CN 201810013244A CN 108183380 B CN108183380 B CN 108183380B
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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Abstract
An integrated optoelectronic oscillator comprising: the photoelectric converter comprises an optoelectronic chip and an electronic chip, wherein the input end of the electro-optical converter in the optoelectronic chip is connected with the output end of the second biaser in the electronic chip; the output end of a photoelectric detector in the photoelectronic chip is connected with the input end of a first biaser in the electronic chip; the optoelectronic chip and the electronic chip are manufactured on a heat-conducting substrate. The invention is used for providing a stable microwave signal source with high frequency, high frequency and common purity, low phase noise, small size and low cost for a microwave system. The integrated photoelectric oscillator integrates the photoelectronic device on the indium phosphide-based photoelectronic chip, integrates the photoelectronic device on a silicon substrate or a printed circuit board, finally combines the photoelectronic device and the silicon substrate in a gold wire bonding mode to form a loop, and is fixed on the same heat conduction base, thereby realizing the integration and miniaturization of the photoelectric oscillator and reducing the cost of a microwave signal source.
Description
Technical Field
The invention belongs to the technical field of integrated microwave photon, particularly relates to an integrated photoelectric oscillator, and particularly relates to an integrated low-cost high-frequency microwave signal source for providing high frequency, low phase noise and high spectral purity for a microwave system.
Technical Field
With the advent of the information age, the demand of human society for information, whether in the civilian or military fields, has emerged as an explosive growth state with increasing reliance on information. The microwave system is the important hardware foundation indispensable to this information society. Microwave technology plays an important supporting role in civil fields such as communication, sensing and medical treatment, and military fields such as satellite communication, radar and electronic countermeasure. From the point of view of signal generation, microwave signal sources are the basis and precondition for all microwave technology applications. Especially, when the current communication system and radar system face huge challenges, the microwave signal source with high frequency, high spectral purity and low phase noise is very important. At present, high-performance microwave signal sources are mainly based on dielectric oscillators or crystal oscillators as energy storage units to generate microwave signals. However, when these devices operate at frequencies above gigahertz, the quality of the output microwave signal will be severely reduced due to the reduced Q value of the energy storage device, and it is difficult to generate a microwave signal with high frequency and low phase noise.
The optoelectronic oscillator combining the advantages of photonics can effectively solve the contradiction, and is considered to be a very promising high-frequency microwave signal source. It has the following outstanding advantages: (1) the photonic high-bandwidth low-loss microwave signal generation device can generate a microwave signal with high frequency (dozens of gigahertz) by combining the advantages of large bandwidth and low loss of photonics, and has high spectral purity and ultralow phase noise; (2) the structure is flexible and reconfigurable. By the change of the structure, frequency tuning, comb frequency generation, and the like can be realized. And the characteristics of the photoelectric oscillation can be conveniently integrated into the existing optical fiber communication system and the optical sensing network. At present, such as multi-loop optoelectronic oscillators, coupled optoelectronic oscillators, rayleigh scattering assisted optoelectronic oscillators, injection optoelectronic oscillators, and tunable optoelectronic oscillators have been reported. However, these optoelectronic oscillators require long-distance optical fiber (several kilometers) as an energy storage element to achieve low phase noise, thereby increasing the instability of the system. On the other hand, discrete devices often have the problems of large volume, large weight and high cost, and are difficult to be commercialized.
In recent years, with the development of integrated photonics, on-chip integration of lasers, modulators, detectors, energy storage units, etc., such as those required for optoelectronic oscillators, has been achieved. Thus making it possible to inherit the opto-electronic oscillator. At present, materials related to integrated photonics mainly comprise materials such as silicon, silicon nitride, silicon dioxide, aluminum nitride, indium phosphide and the like, wherein the materials of the silicon nitride, the silicon dioxide and the aluminum nitride are difficult to realize active integration due to the material characteristics. Although modulators and detectors can be implemented on silicon, no integrated light source has been developed that is currently available. Thus, indium phosphide is currently the best choice for monolithic integration of all optoelectronic devices required for optoelectronic oscillators. Therefore, the advantages of integration can be exerted, and the size, the weight and the cost of the photoelectric oscillator are greatly reduced. On the other hand, electronic integration of microwave devices has already matured on silicon. Therefore, the integration of both devices by packaging is an important path for realizing a miniaturized optoelectronic oscillator.
The integrated photoelectric oscillator provided by the invention fully exerts the advantage of indium-phosphorus photoelectron integration, and the spiral optical waveguide replaces a long optical fiber to realize energy storage, thereby greatly reducing the instability of output signals. Meanwhile, the electronic chip and the photoelectronic chip are packaged on the same heat-conducting substrate, so that the size of the device is greatly reduced, the integration advantage can be played, the cost of the photoelectric oscillator is reduced, and the photoelectric oscillator has commercial value.
Disclosure of Invention
The invention provides an integrated photoelectric oscillator which is used for providing a stable microwave signal source with high frequency, high frequency and common purity, low phase noise, small size and low cost for a microwave system. The integrated photoelectric oscillator integrates the photoelectronic device on the indium phosphide-based photoelectronic chip, integrates the photoelectronic device on a silicon substrate or a printed circuit board, finally combines the photoelectronic device and the silicon substrate in a gold wire bonding mode to form a loop, and is fixed on the same heat conduction base, thereby realizing the integration and miniaturization of the photoelectric oscillator and reducing the cost of a microwave signal source.
The invention provides an integrated optoelectronic oscillator comprising:
an optoelectronic chip comprising:
an electro-optical converter;
the input end of the optical delay unit is connected with the output end of the electro-optical converter;
an optical coupler, the input port 1 of which is connected with the output end of the optical delay unit, and the port 3 of which is the optical output end;
the input end of the photoelectric detector is connected with the output port 2 of the optical coupler;
an electronic chip comprising:
a first bias device;
the input end of the microwave amplifier is connected with the output end of the first bias device;
the input end of the tunable electric delay line is connected with the output end of the microwave amplifier;
the input end of the microwave filter is connected with the output end of the tunable electric delay line;
the input port 1 of the first electric power divider is connected with the output end of the microwave filter, and the port 3 of the first electric power divider is a microwave output end;
the input end of the microwave phase shifter is connected with the output port 2 of the first electric power divider;
the input end of the second biaser is connected with the output end of the microwave phase shifter;
the input end of an electro-optical converter in the optoelectronic chip is connected with the output end of a second biaser in the electronic chip; the output end of a photoelectric detector in the photoelectronic chip is connected with the input end of a first biaser in the electronic chip;
the optoelectronic chip and the electronic chip are manufactured on a heat-conducting substrate.
The integrated photoelectric oscillator provided by the invention has the following beneficial effects:
1. by integrating all the photoelectric devices and the microwave devices on a chip in an integrated manner, the size, the weight and the cost of the photoelectric oscillator system are greatly reduced.
2. The short loop length enables the free frequency spectrum width of the resonance of the photoelectric oscillator to be very large, so that the requirement on the bandwidth of a microwave filter is reduced, single-mode oscillation starting is convenient to achieve, and the purity of a high frequency spectrum is improved.
3. The spiral optical waveguide is used for replacing a long optical line to realize loop energy storage, and the stability of a system link is greatly improved by combining the advantage of integration.
Drawings
For the purpose of promoting an understanding of the principles of the invention and for the purpose of promoting an understanding of the principles of the invention, reference will now be made in detail to the embodiments of the invention illustrated in the accompanying drawings, in which:
FIG. 1 is a schematic diagram of an integrated optoelectronic oscillator according to the present invention;
FIG. 2 is a schematic structural diagram of an electro-optical converter formed by a single-frequency laser 1a and an electro-optical modulator 1b according to the present invention;
FIG. 3 is a schematic view of a helical waveguide of the present invention;
FIG. 4 is a schematic diagram of a dual-loop optical delay cell;
FIG. 5 is a schematic diagram of a two-way tunable microwave intensity attenuator;
FIG. 6 is a schematic diagram of a resonant micro-ring delay structure;
Detailed Description
Referring to fig. 1, the present invention provides an integrated optoelectronic oscillator, comprising:
an optoelectronic chip a comprising:
the electro-optical converter 1 is a direct modulation laser or a single frequency laser and an electric light modulator;
an optical delay unit 3, the input end of which is connected with the output end of the electro-optical converter 1, wherein the optical delay unit 3 is a single-path spiral indium-phosphorus-based optical waveguide or a double-path spiral indium-phosphorus-based optical waveguide;
an optical coupler 4, the input port 1 of which is connected with the output end of the optical delay unit 3, the port 3 of the optical coupler 4 being the optical output end;
the input end of the photoelectric detector 5 is connected with the output port 2 of the optical coupler 4, and the photoelectric detector 5 is an indium phosphorus-based high-speed and high-responsivity photoelectric detector;
an electronic chip B comprising:
a first biaser 6;
a microwave amplifier 7, the input end of which is connected with the output end of the first bias device 6;
the input end of the tunable electric delay line 8 is connected with the output end of the microwave amplifier 7, the tunable electric delay line 8 is a single-path tunable microwave intensity attenuator or a double-path tunable microwave intensity attenuator integrated on a chip, and the tunable electric delay line is mainly used for tuning loss in a resonance loop and reducing the nonlinear effect of subsequent devices, so that optimal microwave output is realized;
the input end of the microwave filter 9 is connected with the output end of the tunable electric delay line 8, and the microwave filter 9 is a flat-top filter and is used for filtering out single-resonance microwave frequency;
a first electric power divider 10, an input port 1 of which is connected with an output end of the microwave filter 9, and a port 3 of the first electric power divider 10 is a microwave output end;
a microwave phase shifter 11, the input end of which is connected to the output port 2 of the first power divider 10;
a second bias device 12, the input end of which is connected with the output end of the microwave phase shifter 11;
wherein the input end of the electro-optical converter 1 in the optoelectronic chip a is connected with the output end of the second biaser 12 in the electronic chip B; the output end of the photoelectric detector 5 in the photoelectronic chip A is connected with the input end of the first biaser 6 in the electronic chip B;
the optoelectronic chip a and the electronic chip B are fabricated on a thermally conductive substrate 13.
As shown in fig. 3, the optical delay unit 3 is composed of a spiral optical waveguide, which may be in a cascade form to achieve maximum link energy storage.
The working process of the integrated photoelectric oscillator is that microwave signals are modulated onto optical carriers through an electro-optical converter 1, and the modulated optical signals are transmitted through an optical delay unit 3 and then sent to a photoelectric detector 5 through an optical coupler 4 for photoelectric conversion. The microwave signal obtained by the photoelectric detector 5 is amplified by the microwave amplifier 7 and filtered by the microwave filter 9 and then sent to the microwave modulation port of the photoelectric converter 1 to form a closed loop. When the total gain of the loop is greater than the loss in the loop, it can self-oscillate to generate high quality microwave signals.
Preferably, the electro-optical converter can be a single frequency laser 1a and an electro-optical modulator 1b, instead of a directly tuned laser, to improve the performance of the system, as shown in fig. 2.
Preferably, as shown in fig. 4, a dual-loop optical delay unit can be used to form a dual-loop optoelectronic oscillator to stabilize the frequency and reduce the phase noise. An optical signal output from the electro-optical converter 1 is divided into two paths, one path enters the optical delay unit 3a for delay, the other path enters the optical delay unit 3b for delay, and finally, one part of signal light is output and the other part enters the photoelectric detector 5 for beat frequency after being combined. The double-loop photoelectric oscillator can better inhibit mode hopping and realize reduction of phase noise.
Preferably, as shown in fig. 5, a tunable delay line 8 is formed by using two-way tunable microwave intensity attenuators, that is, after the signal passes through the electric amplifier 7, the signal is divided into two ways by an electric splitter 81, and after the two ways pass through electric attenuators 82 and 86 and electric retarders 83 and 85, the two ways are combined into one way by an electric splitter 84 and input to the microwave filter 9. The devices are connected through microwave coplanar waveguide. By adopting the method, the length of the photoelectric link and the gain of each loop can be finely adjusted, so that a more complex microwave oscillator is realized.
Preferably, the optical delay unit 3 can be replaced with a resonant micro-ring delay structure as shown in fig. 6 for energy storage. Further, in order to improve the energy storage capacity, the delay unit may be completed on a substrate made of other materials (such as silicon dioxide, silicon nitride, etc.), and then connected to the front-end electro-optical converter 1 and the back-end optical coupler 4 by means of optical coupling, so as to finally implement a resonant circuit.
Furthermore, the above definitions of the various elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art may simply well add or replace the structures, such as: the optical delay unit 3 may be various shapes, and may be replaced with a resonance type delay unit. The laser may be changed from an on-chip to an off-chip laser. A feedback circuit may be added to control the phase shifter 11 by phase discrimination feedback with the output of the integrated optoelectronic oscillator, making the output of the optoelectronic oscillator more stable. Also, the attached drawings are simplified and are for illustration purposes. The number, shape and size of the devices shown in the drawings may be modified depending on the actual situation, and the arrangement of the devices may be more complicated.
The above-described embodiments are preferred embodiments of the present invention, and not intended to limit the scope of the present invention, and the scope of the present invention includes, but is not limited to, the present invention, and all equivalent changes in shape and structure according to the present invention are within the scope of the present invention.
Claims (6)
1. An integrated optoelectronic oscillator comprising:
an optoelectronic chip comprising:
an electro-optical converter;
the input end of the optical delay unit is connected with the output end of the electro-optical converter;
an optical coupler, the input port 1 of which is connected with the output end of the optical delay unit, and the port 3 of which is the optical output end;
the input end of the photoelectric detector is connected with the output port 2 of the optical coupler;
an electronic chip comprising:
the microwave input end of the first biaser is connected with the output end of the photoelectric detector through gold wire bonding;
the input end of the microwave amplifier is connected with the output end of the first bias device;
the input end of the tunable electric delay line is connected with the output end of the microwave amplifier;
the input end of the microwave filter is connected with the output end of the tunable electric delay line;
the input port 1 of the first electric power divider is connected with the output end of the microwave filter, and the port 3 of the first electric power divider is a microwave output end;
the input end of the microwave phase shifter is connected with the output port 2 of the first electric power divider;
the input end of the second biaser is connected with the output end of the microwave phase shifter, and the microwave output end of the second biaser is connected with the input end of the electro-optical converter through gold wire bonding;
the input end of an electro-optical converter in the optoelectronic chip is connected with the output end of a second biaser in the electronic chip; the output end of a photoelectric detector in the photoelectronic chip is connected with the input end of a first biaser in the electronic chip;
the electronic chip is a printed circuit board and is fixed on the same heat-conducting substrate with the photonic chip; the tunable electric delay line is a series combination of a single-circuit electric attenuator and an electric delayer integrated on a chip or a series combination of a double-circuit electric attenuator and an electric delayer, the tuning of microwave frequency can be realized by controlling the electric delayer, and the nonlinear effect of subsequent devices is reduced by controlling the loss in a tunable resonance loop of the electric attenuator.
2. The integrated optoelectronic oscillator according to claim 1, wherein the electro-optical converter is a direct tuned laser or a single frequency laser powered optical modulator.
3. The integrated optoelectronic oscillator of claim 1, wherein the optical delay elements are single-pass cascaded spiral InP-based optical waveguides or double-pass cascaded spiral InP-based optical waveguides.
4. The integrated optoelectronic oscillator according to claim 1, wherein the microwave filter is a flat-top filter for filtering out single resonant microwave frequencies.
5. The integrated optoelectronic oscillator according to claim 1, wherein the photodetectors are indium-phosphorus based high-speed, high-responsivity photodetectors.
6. The integrated optoelectronic oscillator according to claim 1, wherein the optoelectronic chip and the electronic chip are secured to the thermally conductive substrate by means of a thermally conductive adhesive.
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| CN108879294B (en) * | 2018-07-23 | 2020-02-21 | 中国科学院半导体研究所 | Photoelectric oscillator based on self-feedback single-period oscillation of directly-modulated semiconductor laser |
| CN111146669A (en) * | 2018-11-05 | 2020-05-12 | 中国科学院半导体研究所 | On-chip integrated double-ring photoelectric oscillator |
| CN110176709A (en) | 2019-05-10 | 2019-08-27 | 中国科学院半导体研究所 | Integrated Fourier mode locking optical-electronic oscillator and application and communication system |
| CN110137782B (en) * | 2019-05-14 | 2020-09-15 | 中国科学院半导体研究所 | Photoelectric oscillator |
| CN110780398A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Direct-adjusting analog electro-optical conversion integrated assembly |
| CN112117238B (en) * | 2020-09-22 | 2022-07-29 | 上海无线电设备研究所 | Miniaturized optoelectronic oscillator based on SIP packaging technology |
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| US20050218398A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics |
| JP5290737B2 (en) * | 2008-02-08 | 2013-09-18 | 古河電気工業株式会社 | Optical-microwave oscillator and pulse generator |
| KR101190861B1 (en) * | 2008-11-28 | 2012-10-18 | 한국전자통신연구원 | Burst mode optical repeater |
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| CN105896235B (en) * | 2016-06-08 | 2019-04-05 | 中国科学技术大学 | Optical-electronic oscillator based on multilayer film echo wall mode optical micro-cavity |
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