CN108039540A - Microwave signal on-off control method thereof and optical servo system switch based on photodetector - Google Patents
Microwave signal on-off control method thereof and optical servo system switch based on photodetector Download PDFInfo
- Publication number
- CN108039540A CN108039540A CN201711257952.1A CN201711257952A CN108039540A CN 108039540 A CN108039540 A CN 108039540A CN 201711257952 A CN201711257952 A CN 201711257952A CN 108039540 A CN108039540 A CN 108039540A
- Authority
- CN
- China
- Prior art keywords
- msub
- mrow
- photodetector
- mfrac
- microwave signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of microwave signal on-off control method thereof based on photodetector, a photodetector is concatenated in lower frequency microwave signals path, and a resistance R in parallel with the load of lower frequency microwave signals is accessed after photodetector1;The break-make of the lower frequency microwave signals path is controlled by controlling irradiation to the optical signal of the photodetector:When having light irradiation, lower frequency microwave signals path conducting, during unglazed irradiation, the lower frequency microwave signals path shut-off.The invention also discloses a kind of optical servo system switch based on photodetector.The present invention realizes the working frequency and switching speed that have light conduction, unglazed blocking, can significantly improve microwave switch of microwave signal using photodetector, and simple in structure, is easily integrated;The present invention further by adding the inductance and resistance in parallel with photodetector, realizes the break-make control to high-frequency microwave signal, and can realize the flexible modulation of working frequency range and bandwidth of operation.
Description
Technical field
The present invention relates to a kind of microwave switch, more particularly to a kind of optical servo system to switch, and belongs to microwave photon technology field.
Background technology
The main function of microwave switch is to control the break-make of microwave signal or different channels are cut off, and is microwave control
The important component of circuit, is widely used in electronic countermeasure, microwave measurement, communication, satellite and radar etc..With
The fast development of microwave technology, also increasingly improves the performance requirement of microwave switch, and there is an urgent need to improve its working frequency, work
The performance indicators such as speed, bandwidth of operation.Traditional pin diode switch and RF-MEMS switch (RF microelectronic switch) due to
Limited be subject to electronic bottleneck, can not gradually meet such requirement.
Compared to traditional microwave switch, optical servo system switch has obvious advantage.First, for controlling optical servo system
Without electromagnetic interference between the optical signal of switch on and off and the microwave signal propagated in a link, the stability of system can be improved;Its
Secondary, the response speed of optical servo system switch is very fast, can as low as ps magnitudes, can realize being switched fast for switch;It is meanwhile light-operated micro-
Ripple switch also has many advantages, such as small, to be easily integrated.
Optical servo system switch is that one kind is based on photoelectric device, is proposed first in 1975 by A.Johnson et al..
Due to its plurality of advantages, the concern of more and more researchers is caused, is developed rapidly.At present, it is most widely used
General is Auston optical servo systems switch.Its basic structure is:In the surface of medium substrate making metal micro-strip transmission line, and
The gap of certain length is etched on transmission line, for blocking to microwave signal, meanwhile, place both ends in gap location and be coated with
The high resistant light-sensitive semiconductor material of electrode film, and ensure that electrode is connected well with microstrip transmission line.One end of microstrip line is micro-
Ripple signal input part, the other end are microwave signal output terminal.When no light, very big resistance is presented in light-sensitive semiconductor material
Property, it is insulator that can be approximately considered, and microwave signal can not be switched by optical servo system, and switch is off.When there is light
According to when, light-sensitive semiconductor material produce photoconductive effect, its electrical conductivity drastically (ps magnitudes) increase, semi-conducting material is with regard to phase at this time
It can be switched when in a conductor, microwave signal by optical servo system, switch is in the conduction state.
Although the optical servo system switch of Auston structures is using relatively broad, during the high speed switching switched, its amount
Son is less efficient, and the incident optical power needed under conducting state is larger, is not suitable for large-scale switches array.In order to solve this
A little problems, the optical servo system switch based on photodetector are suggested in succession, it is low with excitation light power, suitable for cutting at a high speed
The advantages that changing, but its working frequency range is relatively low, until 2016,《Frequency down-conversion using
photodiode sanpling》The method that refer to realize microwave switch using UTC-PD in one text, but its switch mould
Formula is has photoresist to break, and no light conduction, the pattern with universal switch on the contrary, there is inconvenience in practical applications.
The content of the invention
The technical problems to be solved by the invention are to overcome the shortage of prior art, there is provided a kind of based on photodetector
Microwave signal on-off control method thereof, has light conduction, unglazed blocking using what photodetector realized microwave signal path.
It is of the invention that above-mentioned technical problem is specifically solved using following technical scheme:
A kind of microwave signal on-off control method thereof based on photodetector, concatenates one in lower frequency microwave signals path
Photodetector, and a resistance R in parallel with the load of lower frequency microwave signals is accessed after photodetector1;Pass through control
System irradiation controls the break-make of the lower frequency microwave signals path to the optical signal of the photodetector:When having light irradiation, institute
The conducting of lower frequency microwave signals path is stated, during unglazed irradiation, the lower frequency microwave signals path shut-off;The resistance R1According to following
Formula determines:
In formula, VOUTTo export to the lower frequency microwave signals voltage of the load of microwave signal;VINFor input to photodetector
Lower frequency microwave signals voltage;R0For the load resistance of lower frequency microwave signals;ZPDFor the impedance of photodetector, its expression formula
For:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the lower frequency microwave signals
Frequency;I is imaginary unit.
What such scheme can realize microwave signal path has light conduction, a unglazed blocking, but can not be suitable for high-frequency microwave and believe
Number, in order to realize the break-make control to optional frequency (including high frequency) microwave signal, present invention further propose that following technology
Scheme:
A kind of microwave signal on-off control method thereof based on photodetector, concatenates a parallel connection in microwave signal path
Circuit, and a resistance R in parallel with the load of microwave signal is accessed after the parallel circuit1, the parallel circuit is by electricity
Feel L and resistance R2It is in parallel with photodetector again after series connection to form;By controlling optical signal of the irradiation to the photodetector
To control the break-make of the microwave signal path:When having light irradiation, microwave signal path conducting is described during unglazed irradiation
Microwave signal path turns off;The resistance R1 is determined according to the following formula:
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINFor the micro- of input to photodetector
Wave voltage signal;R0For the load resistance of microwave signal;Z′PDFor the impedance of the parallel circuit, its expression formula is:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal
Rate;I is imaginary unit.
Further, realized by adjusting inductance L and the break-make of optional frequency microwave signal is controlled.
Further, by adjusting resistance R2Realize the adjustment to the bandwidth of the microwave signal.
Following technical scheme can also be obtained according to identical invention thinking:
A kind of optical servo system switch based on photodetector, the break-make for lower frequency microwave signals path controls, described
Optical servo system switch includes being serially connected with a photodetector in lower frequency microwave signals path, and be connected to photodetector it
The resistance R in parallel with the load of lower frequency microwave signals afterwards1;When having photodetector described in illumination directive, the low frequency microwave letter
The conducting of number path, during unglazed irradiation, the lower frequency microwave signals path shut-off;The resistance R1Determined according to the following formula:
In formula, VOUTTo export to the lower frequency microwave signals voltage of the load of microwave signal;VINFor input to photodetector
Lower frequency microwave signals voltage;R0For the load resistance of lower frequency microwave signals;ZPDFor the impedance of photodetector, its expression formula
For:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the lower frequency microwave signals
Frequency;I is imaginary unit.
In addition, it also can obtain another optical servo system switch based on photodetector, the optical servo system switch bag
A parallel circuit being serially connected with microwave signal path is included, and is connected to the load after the parallel circuit with microwave signal
Resistance R in parallel1, the parallel circuit is by inductance L and resistance R2It is in parallel with photodetector again after series connection to form;There is light irradiation
During to the photodetector, microwave signal path conducting, during unglazed irradiation, the microwave signal path shut-off;It is described
Resistance R1Determined according to the following formula:
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINFor the micro- of input to photodetector
Wave voltage signal;R0For the load resistance of microwave signal;Z′PDFor the impedance of the parallel circuit, its expression formula is:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal
Rate;I is imaginary unit.
Preferably, the inductance L is controllable impedance, can be realized by adjusting inductance L and optional frequency microwave signal is led to
Disconnected control.
Preferably, the resistance R2, can be by adjusting resistance R for adjustable resistance2Realize to the bandwidth of the microwave signal
Adjustment.
Compared with prior art, technical solution of the present invention has the advantages that:
The present invention has light conduction, unglazed blocking using what photodetector realized microwave signal path, can significantly carry
The working frequency and switching speed of high microwave switch, and it is simple in structure, it is easily integrated;
The present invention further by adding the inductance and resistance in parallel with photodetector, is realized to optional frequency (bag
Include high frequency) control of the break-make of microwave signal, and working frequency range and work band can be realized by the adjustment to the inductance and resistance
Wide flexible modulation.
Brief description of the drawings
Fig. 1 is the schematic equivalent circuit that optical servo system of the present invention switchs a preferred embodiment;
Fig. 2 for no shunt inductance and resistance when optical servo system of the present invention switch on-off simulation result;
Optical servo system of the present invention switches on-off simulation result when Fig. 3 is shunt inductance and resistance;
The actual onoff result of Fig. 4 optical servo system switches of the present invention when being shunt inductance and resistance.
Embodiment
The switch pattern switched for the existing optical servo system based on photodetector is to have photoresist to break, without light guide
It is logical, it is inconvenient for use the problem of, the present invention passes through accesses an electricity in parallel with the load of microwave signal after photodetector
Resistance, the switch pattern so as to fulfill optical servo system switch are to have light conduction, unglazed blocking.Specifically, the present invention is specific
Using following technical scheme:
Optical servo system switch based on photodetector, the break-make for lower frequency microwave signals path controls, described light-operated
Microwave switch includes being serially connected with a photodetector in lower frequency microwave signals path, and be connected to after photodetector with
The resistance R of the load parallel connection of lower frequency microwave signals1;When having photodetector described in illumination directive, the lower frequency microwave signals lead to
Road turns on, during unglazed irradiation, the lower frequency microwave signals path shut-off;The resistance R1Determined according to the following formula:
In formula, VOUTTo export to the lower frequency microwave signals voltage of the load of microwave signal;VINFor input to photodetector
Lower frequency microwave signals voltage;R0For the load resistance of lower frequency microwave signals;ZPDFor the impedance of photodetector, its expression formula
For:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the lower frequency microwave signals
Frequency;I is imaginary unit.
What such scheme can realize microwave signal path has light conduction, a unglazed blocking, but can not be suitable for high-frequency microwave and believe
Number, in order to realize the break-make control to the optional frequency microwave signal including high frequency, present invention further propose that below
Technical solution:
A kind of optical servo system switch based on photodetector, the optical servo system switch lead to including being serially connected with microwave signal
A parallel circuit in road, and it is connected to parallel circuit resistance R in parallel with the load of microwave signal afterwards1, it is described
Parallel circuit is by inductance L and resistance R2It is in parallel with photodetector again after series connection to form;There is photodetector described in illumination directive
When, microwave signal path conducting, during unglazed irradiation, the microwave signal path shut-off;The resistance R1According to following public affairs
Formula determines:
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINFor the micro- of input to photodetector
Wave voltage signal;R0For the load resistance of microwave signal;Z′PDFor the impedance of the parallel circuit, its expression formula is:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal
Rate;I is imaginary unit.
Fig. 1 shows that optical servo system of the present invention switchs the equivalent circuit of a preferred embodiment.As shown in Figure 1, this is light-operated
Microwave switch includes photodetector and match circuit.For photodetector, when no light pulse enters photodetector,
Photodetector has wider depletion layer, it is equivalent to a less capacitance in the loop;Enter photoelectricity when there is light pulse
During detector, photodetector excitation, photogenerated current causes the voltage at photodetector load both ends to decline, so that photoelectricity
The bias voltage of detector reduces, and photodetector depletion width diminishes at this time, its shunt resistance reduces, junction capacity increase,
A resistance and capacitance parallel circuit are equivalent in the loop.Match circuit in the present embodiment as shown in Figure 1, including with photoelectricity
The inductance L and resistance R of detector parallel connection2And resistance R in parallel with the load of microwave signal afterwards1.Wherein, resistance R1Work
With the operating mode for being change optical servo system switch, i.e., from there is photoresist to break, unglazed ON transitions are to have light conduction, unglazed blocking,
Using more odd jobs.Assuming that the present invention only included for the match circuit set by photodetector be connected to after photodetector with
Load R0Resistance R in parallel1, at this time, the input of optical servo system switch is with the relational expression exported:
In formula, R1Resistance after photodetector, R0For load impedance, (output impedance is also R0), ZPDFor photodetector
Impedance, its expression formula is:
Wherein, RPDFor photodetector resistance, when having light, its resistance value is very small, during no light, since photodetector consumes
Layer to the greatest extent is wider, and resistance is larger;CPDFor the junction capacity of photodetector, for its capacitance in pf ranks, f is the frequency of input signal
Rate;I is imaginary unit.
At this time, when thering is the light to inject photodetector, the optical servo system switch conduction frequency of microwave signal (no matter height), nothing
Light time, hinders low frequency signal, leads to high-frequency signal.As shown in Figure 2, optical servo system switch is only operable on lower frequency microwave signals path
In.
High-frequency signal can be applicable in realize, as shown in Figure 1, the present invention is further added in match circuit and light
The inductance L and resistance R of electric explorer parallel connection2.At this time, the input of optical servo system switch and the relational expression of output are:
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINFor the micro- of input to photodetector
Wave voltage signal;R0For the load resistance of microwave signal;Z′PDFor inductance L1, resistance R2And the parallel connection electricity that photodetector is formed
The impedance on road, its expression formula are:
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal
Rate;I is imaginary unit.
At this time, when no light pulse enters photodetector, by the value of tuning coil L, the micro- of specific frequency can be blocked
Ripple signal;When there is light pulse to enter photodetector, the microwave signal of optional frequency can be switched by the optical servo system into
Row transmission;Meanwhile by adjusting resistance R2, can adjust the bandwidth for blocking frequency range.Therefore, preferably with controllable impedance and adjustable electric
Resistance is used as inductance L and resistance R2。
In order to verify the effect of technical solution of the present invention, emulation experiment and actual measurement experiment have been carried out.Utilized in emulation experiment
Photodetector response wave length be 1550nm, be operated under low bias voltage, C during unglazed pulse inputPD=0.04pF, there is light
Its R during pulse inputPD=1.3 Ω, CPDChange is smaller.
First, resistance R is only increased after photodetector1And be grounded, choose R0, R1Value be equal 50 Ω, thenZPDFor the impedance of photodetector, its expression formula is:
Wherein, RPDPhotodetector resistance, when having light, RPD=1.3 Ω, during no light, due to photodetector depletion layer compared with
Width, resistance are larger;CPDFor the junction capacity of photodetector, its capacitance CPD=0.04pF, illumination influence it smaller, f
For the frequency of input signal.At this time, simulation result is as shown in Fig. 2, when having light, optical servo system switch conduction, during no light, hinders low frequency
Signal, leads to high-frequency signal.
Adding the inductance L and resistance R in parallel with photodetector2Afterwards, during no light, the impedance of parallel circuit:
When having light, the impedance of parallel circuit:
By tuning L, it can be achieved that controlling the break-make of set specific frequency signal, by tuning R2, can adjust and block frequency band
Bandwidth.Work as L=1.2nH, R2During=2 Ω, its simulation result is as shown in Figure 3.
Fig. 4 shows the actual onoff of optical servo system switch of the present invention when shunt inductance and resistance as a result, from figure
It can be seen that, by tuning coil and resistance, the achievable microwave signal of optical servo system switch of the present invention has light conduction, without photoresist
It is disconnected, centre frequency 0.3GHz, make-to-break ratio about 11dB, bandwidth 1.5GHz.
Claims (8)
1. a kind of microwave signal on-off control method thereof based on photodetector, it is characterised in that in lower frequency microwave signals path
One photodetector of middle concatenation, and a resistance in parallel with the load of lower frequency microwave signals is accessed after photodetector
R1;The break-make of the lower frequency microwave signals path is controlled by controlling irradiation to the optical signal of the photodetector:There is light
During irradiation, lower frequency microwave signals path conducting, during unglazed irradiation, the lower frequency microwave signals path shut-off;The resistance
R1Determined according to the following formula:
<mrow>
<mfrac>
<msub>
<mi>V</mi>
<mrow>
<mi>O</mi>
<mi>U</mi>
<mi>T</mi>
</mrow>
</msub>
<msub>
<mi>V</mi>
<mrow>
<mi>I</mi>
<mi>N</mi>
</mrow>
</msub>
</mfrac>
<mo>=</mo>
<mfrac>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
<mo>/</mo>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mrow>
<msub>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>+</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
</mrow>
</mfrac>
</mrow>
In formula, VOUTTo export to the lower frequency microwave signals voltage of the load of microwave signal;VINFor the low of input to photodetector
Frequency microwave signal voltage;R0For the load resistance of lower frequency microwave signals;ZPDFor the impedance of photodetector, its expression formula is:
<mrow>
<msub>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>=</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mfrac>
<mn>1</mn>
<msub>
<mi>R</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mfrac>
<mo>+</mo>
<mi>i</mi>
<mn>2</mn>
<msub>
<mi>&pi;fC</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mrow>
</mfrac>
</mrow>
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the lower frequency microwave signals
Rate, i are imaginary unit.
2. a kind of microwave signal on-off control method thereof based on photodetector, it is characterised in that gone here and there in microwave signal path
A parallel circuit is connect, and a resistance R in parallel with the load of microwave signal is accessed after the parallel circuit1, it is described simultaneously
Join circuit by inductance L and resistance R2It is in parallel with photodetector again after series connection to form;By controlling irradiation to the photodetection
The optical signal of device controls the break-make of the microwave signal path:When having light irradiation, the microwave signal path conducting, no light
When penetrating, the microwave signal path shut-off;The resistance R1 is determined according to the following formula:
<mrow>
<mfrac>
<msub>
<mi>V</mi>
<mrow>
<mi>O</mi>
<mi>U</mi>
<mi>T</mi>
</mrow>
</msub>
<msub>
<mi>V</mi>
<mrow>
<mi>I</mi>
<mi>N</mi>
</mrow>
</msub>
</mfrac>
<mo>=</mo>
<mfrac>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
<mo>/</mo>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mrow>
<msubsup>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
<mo>&prime;</mo>
</msubsup>
<mo>+</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
</mrow>
</mfrac>
</mrow>
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINMicrowave to input to photodetector is believed
Number voltage;R0For the load resistance of microwave signal;Z′PDFor the impedance of the parallel circuit, its expression formula is:
<mrow>
<msubsup>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
<mo>&prime;</mo>
</msubsup>
<mo>=</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mfrac>
<mn>1</mn>
<msub>
<mi>R</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mfrac>
<mo>+</mo>
<mi>i</mi>
<mn>2</mn>
<msub>
<mi>&pi;fC</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>+</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mi>i</mi>
<mn>2</mn>
<mi>&pi;</mi>
<mi>f</mi>
<mi>L</mi>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>2</mn>
</msub>
</mrow>
</mfrac>
</mrow>
</mfrac>
</mrow>
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal;i
For imaginary unit.
3. method as claimed in claim 2, it is characterised in that realize by adjusting inductance L and lead to optional frequency microwave signal
Disconnected control.
4. method as claimed in claim 2, it is characterised in that by adjusting resistance R2Realize to the bandwidth of the microwave signal
Adjustment.
A kind of 5. optical servo system switch based on photodetector, it is characterised in that the break-make for lower frequency microwave signals path
Control, the optical servo system switch includes a photodetector being serially connected with lower frequency microwave signals path, and is connected to light
The resistance R in parallel with the load of lower frequency microwave signals after electric explorer1;It is described when having photodetector described in illumination directive
Lower frequency microwave signals path turns on, during unglazed irradiation, the lower frequency microwave signals path shut-off;The resistance R1According to following public affairs
Formula determines:
<mrow>
<mfrac>
<msub>
<mi>V</mi>
<mrow>
<mi>O</mi>
<mi>U</mi>
<mi>T</mi>
</mrow>
</msub>
<msub>
<mi>V</mi>
<mrow>
<mi>I</mi>
<mi>N</mi>
</mrow>
</msub>
</mfrac>
<mo>=</mo>
<mfrac>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
<mo>/</mo>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mrow>
<msub>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>+</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
</mrow>
</mfrac>
</mrow>
In formula, VOUTTo export to the lower frequency microwave signals voltage of the load of microwave signal;VINFor the low of input to photodetector
Frequency microwave signal voltage;R0For the load resistance of lower frequency microwave signals;ZPDFor the impedance of photodetector, its expression formula is:
<mrow>
<msub>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>=</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mfrac>
<mn>1</mn>
<msub>
<mi>R</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mfrac>
<mo>+</mo>
<mi>i</mi>
<mn>2</mn>
<msub>
<mi>&pi;fC</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mrow>
</mfrac>
</mrow>
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the lower frequency microwave signals
Rate, i are imaginary unit.
6. a kind of optical servo system switch based on photodetector, it is characterised in that the optical servo system switch includes being serially connected with
A parallel circuit in microwave signal path, and it is connected to parallel circuit electricity in parallel with the load of microwave signal afterwards
Hinder R1, the parallel circuit is by inductance L and resistance R2It is in parallel with photodetector again after series connection to form;There is light described in illumination directive
During electric explorer, microwave signal path conducting, during unglazed irradiation, the microwave signal path shut-off;The resistance R1Root
Determined according to the following formula:
<mrow>
<mfrac>
<msub>
<mi>V</mi>
<mrow>
<mi>O</mi>
<mi>U</mi>
<mi>T</mi>
</mrow>
</msub>
<msub>
<mi>V</mi>
<mrow>
<mi>I</mi>
<mi>N</mi>
</mrow>
</msub>
</mfrac>
<mo>=</mo>
<mfrac>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
<mo>/</mo>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mrow>
<msubsup>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
<mo>&prime;</mo>
</msubsup>
<mo>+</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>*</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<mrow>
<mo>(</mo>
<msub>
<mi>R</mi>
<mn>1</mn>
</msub>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>0</mn>
</msub>
<mo>)</mo>
</mrow>
</mrow>
</mfrac>
</mrow>
In formula, VOUTTo export to the microwave signal voltage of the load of microwave signal;VINMicrowave to input to photodetector is believed
Number voltage;R0For the load resistance of microwave signal;Z′PDFor the impedance of the parallel circuit, its expression formula is:
<mrow>
<msubsup>
<mi>Z</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
<mo>&prime;</mo>
</msubsup>
<mo>=</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mfrac>
<mn>1</mn>
<msub>
<mi>R</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
</mfrac>
<mo>+</mo>
<mi>i</mi>
<mn>2</mn>
<msub>
<mi>&pi;fC</mi>
<mrow>
<mi>P</mi>
<mi>D</mi>
</mrow>
</msub>
<mo>+</mo>
<mfrac>
<mn>1</mn>
<mrow>
<mi>i</mi>
<mn>2</mn>
<mi>&pi;</mi>
<mi>f</mi>
<mi>L</mi>
<mo>+</mo>
<msub>
<mi>R</mi>
<mn>2</mn>
</msub>
</mrow>
</mfrac>
</mrow>
</mfrac>
</mrow>
Wherein, RPDFor the resistance of photodetector;CPDFor the junction capacity of photodetector;F is the frequency of the microwave signal;i
For imaginary unit.
7. optical servo system switch as claimed in claim 6, it is characterised in that the inductance L is controllable impedance, can be by adjusting electricity
Feel L realizations to control the break-make of optional frequency microwave signal.
8. optical servo system switch as claimed in claim 6, it is characterised in that the resistance R2, can be by adjusting electricity for adjustable resistance
Hinder R2Realize the adjustment to the bandwidth of the microwave signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711257952.1A CN108039540B (en) | 2017-12-04 | 2017-12-04 | Microwave signal on-off control method based on photoelectric detector and light-operated microwave switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711257952.1A CN108039540B (en) | 2017-12-04 | 2017-12-04 | Microwave signal on-off control method based on photoelectric detector and light-operated microwave switch |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108039540A true CN108039540A (en) | 2018-05-15 |
CN108039540B CN108039540B (en) | 2020-02-18 |
Family
ID=62094777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711257952.1A Active CN108039540B (en) | 2017-12-04 | 2017-12-04 | Microwave signal on-off control method based on photoelectric detector and light-operated microwave switch |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108039540B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111355477A (en) * | 2020-04-24 | 2020-06-30 | 天津师范大学 | (MV) [ SbBr5]Application of material in light-operated switch |
CN111385017A (en) * | 2020-03-10 | 2020-07-07 | 四川灵通电讯有限公司 | KA frequency band high-power amplifier and implementation method thereof |
CN112821086A (en) * | 2021-02-05 | 2021-05-18 | 南京微毫科技有限公司 | Light-operated reconfigurable microwave absorbing system and light-operated reconfigurable microwave absorbing method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252820A (en) * | 1991-03-11 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Photoelectric conversion circuit having a tuning circuit and changeover switcher |
EP1672802A1 (en) * | 2004-12-15 | 2006-06-21 | Thales | High frequency sampling device |
CN103329354A (en) * | 2011-01-25 | 2013-09-25 | 索尼公司 | Optically controlled microwave antenna |
US9431564B2 (en) * | 2008-07-29 | 2016-08-30 | Thales Holding Uk Plc | Photoconductive switch |
-
2017
- 2017-12-04 CN CN201711257952.1A patent/CN108039540B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252820A (en) * | 1991-03-11 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Photoelectric conversion circuit having a tuning circuit and changeover switcher |
EP1672802A1 (en) * | 2004-12-15 | 2006-06-21 | Thales | High frequency sampling device |
US9431564B2 (en) * | 2008-07-29 | 2016-08-30 | Thales Holding Uk Plc | Photoconductive switch |
CN103329354A (en) * | 2011-01-25 | 2013-09-25 | 索尼公司 | Optically controlled microwave antenna |
Non-Patent Citations (1)
Title |
---|
LONGTAO XU 等: ""Frequency down-conversion using photodiode sampling"", 《2016 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP)》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111385017A (en) * | 2020-03-10 | 2020-07-07 | 四川灵通电讯有限公司 | KA frequency band high-power amplifier and implementation method thereof |
CN111385017B (en) * | 2020-03-10 | 2022-05-06 | 四川灵通电讯有限公司 | KA frequency band high power amplifier |
CN111355477A (en) * | 2020-04-24 | 2020-06-30 | 天津师范大学 | (MV) [ SbBr5]Application of material in light-operated switch |
CN112821086A (en) * | 2021-02-05 | 2021-05-18 | 南京微毫科技有限公司 | Light-operated reconfigurable microwave absorbing system and light-operated reconfigurable microwave absorbing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN108039540B (en) | 2020-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107425293B (en) | Left-right-handed circular polarization reconfigurable slot antenna | |
CN108039540A (en) | Microwave signal on-off control method thereof and optical servo system switch based on photodetector | |
CN108039591B (en) | Double-linear polarization rectifying antenna with harmonic suppression capability | |
JPH01192214A (en) | Pulse compacter | |
CN106785251A (en) | Mode transmission ultra-broadband digital phase shifter | |
Gong et al. | A compact, high-power, 60 GHz SPDT switch using shunt-series SiGe PIN diodes | |
CN109525129B (en) | Rectifier circuit based on cooperative network and design method | |
CN101282113A (en) | Ultrafast pulse power switch device as well as autoexcitation picosecond magnitude power pulse generator | |
US6819201B2 (en) | Balanced high isolation fast state transitioning switch apparatus | |
JPH104320A (en) | Superconductor mixer and its phase control method | |
Kossel et al. | Wideband CMOS transimpedance amplifier | |
CN210111946U (en) | Microwave signal branching unit | |
Jones et al. | A W-band photoconductive evanescent-mode waveguide switch | |
CN210111958U (en) | Microwave signal annular transmission structure | |
CN113394574B (en) | Terahertz oscillator integrated with differential antenna and field path fusion method thereof | |
CN202352835U (en) | Antenna capable of switching electric wave polarization direction, and circuit | |
CN106130486B (en) | W-band and terahertz-frequency low-end frequency multiplier | |
JPH0563409A (en) | Waveguide | |
CN103532524B (en) | Pulse radio signal generating and transmitting system and control method of system | |
CN107181467B (en) | Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and double diodes | |
CN102570977B (en) | Right-hand nonlinear transmission line microwave frequency multiplication circuit and manufacturing method thereof | |
CN206559321U (en) | Manufacturing resource Terahertz frequency mixer | |
Schick et al. | 40 Gbit/s differential distributed modulator driver realised in 80 GHz SiGe HBT process | |
CN218514355U (en) | Novel terahertz harmonic mixer | |
CN113824433B (en) | Pulse modulator based on schottky diode cascade |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |