CN107301943A - Faraday shield and reaction chamber - Google Patents
Faraday shield and reaction chamber Download PDFInfo
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- CN107301943A CN107301943A CN201710623037.3A CN201710623037A CN107301943A CN 107301943 A CN107301943 A CN 107301943A CN 201710623037 A CN201710623037 A CN 201710623037A CN 107301943 A CN107301943 A CN 107301943A
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- conductive ferrule
- son
- faraday shield
- cracks
- crack
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of Faraday shield and reaction chamber, it includes conductive ferrule, it is formed with and cracks on the conductive ferrule, this cracks cracks including the first son, the circumferencial direction setting that first son cracks along conductive ferrule, and angle is formed between the axis of conductive ferrule, to by increasing the coupling efficiency of electric field component of the electromagnetic field on the circumferencial direction of conductive ferrule, to increase total coupling efficiency of the electromagnetic field.The Faraday shield that the present invention is provided, it can improve magnetic coupling efficiency, so as to reduce the radio-frequency power for needing to load to radio-frequency coil.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular it relates to a kind of Faraday shield and reaction chamber.
Background technology
Using inductively coupled plasma (Inductive Coupled Plasma Emission
Spectrometer, hereinafter referred to as ICP) during device enters the manufacturing process of line integrated circuit and MEMS, generation
Contain substantial amounts of electronics, ion, the atom of excitation state, molecule and free radical isoreactivity particle, these active grains in plasma
Son and substrate interaction make material surface occur various physical and chemical reactions, so that material surface performance is changed.
Fig. 1 is the sectional view of existing ICP devices.Referring to Fig. 1, ICP devices include reaction chamber 1, in the reaction chamber
Medium cylinder 3 is provided with the side wall 2 of room 1.Wrapping around for medium cylinder 3 is provided with radio-frequency coil 4, it passes through upper adaptation 5
Electrically connected with upper radio-frequency power supply 6, upper radio-frequency power supply 6 is used to load radio-frequency power to radio-frequency coil 4, is produced by radio-frequency coil 4
Electromagnetic field can be fed into reaction chamber 1 by medium cylinder 3, with the process gas formation plasma in provocative reaction chamber 1
Body.Also, pedestal 9 is additionally provided with reaction chamber 1, it is electrically connected by lower adaptation 7 and lower radio-frequency power supply 8, lower radio frequency
Power supply 8 is used to load radio frequency back bias voltage to pedestal 9, to attract plasma etching substrate surface.In addition, in medium cylinder 3
Side ring is provided around Faraday shield 10, for protecting medium cylinder 3 not by plasma etching, while avoiding from substrate surface
The residue sputtered out is attached on the inwall of medium cylinder 3, so as to improve the energy coupling efficiency of medium cylinder 3, is reduced
Particle contamination in reaction chamber 1.
Fig. 2 is the structure chart of existing Faraday shield.Referring to Fig. 2, Faraday shield 10 is ring body, and at this
It is formed with ring body along its axial direction and cracks 101, this cracks 101 breaks ring body between upper and lower two end faces of ring body completely
Open, i.e. ring body is discrete in its circumferential direction, so as to avoid Faraday shield 10 from producing eddy-current loss and heating.
In the structure of above-mentioned Faraday shield 10, due to cracking 101 along the axially arranged of ring body, as shown in figure 3, this
Magnetic-field component A of the electromagnetic field only produced by radio-frequency coil 4 in the axial direction of ring body enable through cracking 101, and is somebody's turn to do
Electric field component B of the electromagnetic field on the circumferencial direction of ring body is difficult through cracking 101, so as to cause magnetic coupling less efficient.
And relatively low magnetic coupling efficiency generally requires to load higher radio-frequency power to radio-frequency coil 4, it could realize that plasma is opened
Brightness, maintains certain processing speed, and uses the independent starter of Top electrode, when substrate dielectric layer is low-k material, to reduce
Damage to the substrate dielectric layer.But, Faraday shield 10 can be made because of whirlpool by loading higher radio-frequency power to radio-frequency coil 4
Flow loss and Ions Bombardment and cause temperature too high, so as to increase the risk of the particle contamination of reaction chamber 1.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of Faraday shield
And reaction chamber, it can improve total coupling efficiency of electromagnetic field, so as to reduce the radio frequency for needing to load to radio-frequency coil
Power.
To realize that the purpose of the present invention provides a kind of Faraday shield, including conductive ferrule, in the conductive ferrule
On be formed with and crack, described crack is cracked including the first son, and first son cracks to be set along the circumferencial direction of the conductive ferrule
Put, and angle is formed between the axis of the conductive ferrule, to by increasing circumference of the electromagnetic field in the conductive ferrule
The coupling efficiency of electric field component on direction, to increase total coupling efficiency of the electromagnetic field.
It is preferred that, first son angle formed between the axis of the conductive ferrule that cracks is 45 °.
It is preferred that, described crack also includes cracking along the second axially arranged son of the conductive ferrule.
It is preferred that, second son, which cracks to crack with first son, to intersect.
It is preferred that, second son cracks to be one or more, and multiple second sons crack and opened along first son
The bearing of trend of seam is spaced apart.
It is preferred that, first son cracks is fully disconnected the conducting ring between two end faces of the conductive ferrule
Body；
Second son cracks the conductive ferrule described in breaking part between two end faces of the conductive ferrule.
It is preferred that, first son cracks the conducting ring described in breaking part between two end faces of the conductive ferrule
Body；
Second son cracks is fully disconnected the conductive ferrule between two end faces of the conductive ferrule.
It is preferred that, first son angle formed between the axis of the conductive ferrule that cracks is 90 °.
It is preferred that, first son cracks to be one or more, and multiple first sons crack along the conductive ferrule
Axially spaced-apart distribution.
It is preferred that, being divided on the circumferencial direction of the conductive ferrule has multiple first areas and multiple second areas, and
Multiple first areas and the alternate setting of multiple second areas；
First son is provided with each first area to crack, and first son cracks at least two,
And be distributed along the axially spaced-apart of the conductive ferrule；
Second son is provided with each second area to crack, and second son cracks at least two,
And along the multiple circumferentially spaced of the conductive ferrule.
It is preferred that, the even circumferential of multiple first areas and multiple second areas relative to the conductive ferrule
Distribution；
First son described at least two cracks to be uniformly distributed relative to the first area；Second son is opened described at least two
Seam is symmetrical relative to the second area.
It is preferred that, width of the first area on the circumferencial direction of the conductive ferrule is 50~200mm.
It is preferred that, it is described to crack to be one or more, and multiple described crack along between the circumferencial direction of the conductive ferrule
Every and be uniformly distributed.
It is preferred that, stop part is provided with the conductive ferrule, and in described crack, the stop part makes described
Crack and form tortuous passageway between the external annulus and internal ring wall of the conductive ferrule.
It is preferred that, the stop part is two, respectively the first stop part and the second stop part, and the two is separately positioned on institute
State conductive ferrule in the first end face and second end face for cracking place, wherein,
First stop part extends from the first end face towards the second end face, and between the second end face
With the first gap；
Second stop part extends from the second end face towards the first end face, and between the first end face
With the second gap；
Radially there is third space in the conductive ferrule between first stop part and the second stop part；
First gap, the second gap and third space constitute the tortuous passageway.
It is preferred that, dielectric material is filled with described crack.
It is preferred that, the span of the width cracked is in 2~10mm.
As another technical scheme, the present invention also provides a kind of reaction chamber, including medium cylinder, Faraday shield and
Radio-frequency coil, the radio-frequency coil is circumferentially positioned at the outside of the medium cylinder；The Faraday shield is circumferentially positioned at institute
Give an account of the inner side of matter cylinder, the above-mentioned Faraday shield that the Faraday shield is provided using the present invention.
It is preferred that, the radio-frequency coil is the cylinder solid formula spiral winding in banding；The cylinder solid formula helix
It is any of circular cylinder solid formula spiral winding that the width of any one circle subcoil of circle in its axial direction, which is more than cross section,
The diameter of one circle subcoil.
It is preferred that, the axial spacing between two circle subcoils of the arbitrary neighborhood of the cylinder solid formula spiral winding is 6-
10mm。
It is preferred that, the reaction chamber is pre-cleaning cavity.
The invention has the advantages that：
The Faraday shield that the present invention is provided, it includes conductive ferrule, and is formed with and cracks on the conductive ferrule, should
Crack and cracked including the first son, the circumferencial direction setting that first son cracks along conductive ferrule, and with the axis of conductive ferrule it
Between form angle, to by increasing the coupling efficiency of electric field component of the electromagnetic field on the circumferencial direction of conductive ferrule, to increase
Plus total coupling efficiency of the electromagnetic field, need the radio-frequency power that is loaded to radio-frequency coil so as to reduce, i.e. though loading compared with
Low radio-frequency power, can also realize plasma starter, maintain certain processing speed, and individually open using Top electrode
Brightness, when substrate dielectric layer is low-k material, to reduce the damage to the substrate dielectric layer.In addition, the relatively low radio frequency work(of loading
Rate can also avoid the temperature of Faraday shield too high, so as to reduce the risk of reaction chamber particle contamination.
The reaction chamber that the present invention is provided, its above-mentioned Faraday shield provided by using the present invention can be reduced
The radio-frequency power loaded to radio-frequency coil is needed, even if so that the relatively low radio-frequency power of loading, can also realize that plasma is opened
Brightness, maintains certain processing speed, and uses the independent starter of Top electrode, when substrate dielectric layer is low-k material, to reduce
Damage to the substrate dielectric layer.In addition, the relatively low radio-frequency power of loading can also avoid the temperature of Faraday shield too high,
So as to reduce the risk of reaction chamber particle contamination.
Brief description of the drawings
Fig. 1 is the sectional view of existing ICP devices；
Fig. 2 is the structure chart of existing Faraday shield；
Fig. 3 is the local structural graph of existing Faraday shield；
The structure chart for the Faraday shield that Fig. 4 A provide for first embodiment of the invention；
A kind of local structural graph for the Faraday shield that Fig. 4 B provide for first embodiment of the invention；
Another local structural graph for the Faraday shield that Fig. 4 C provide for first embodiment of the invention；
Another local structural graph for the Faraday shield that Fig. 4 D provide for first embodiment of the invention；
Another local structural graph for the Faraday shield that Fig. 4 E provide for first embodiment of the invention；
The local structural graph for the Faraday shield that Fig. 5 provides for second embodiment of the invention；
The side view for the Faraday shield that Fig. 6 provides for third embodiment of the invention；
The longitudinal section view for the Faraday shield that Fig. 7 A provide for fourth embodiment of the invention；
Fig. 7 B are the enlarged drawing in I regions in Fig. 7 A；
Fig. 8 is the sectional view of reaction chamber provided in an embodiment of the present invention；
Fig. 9 is a kind of structure chart for radio-frequency coil that the embodiment of the present invention is used；
Figure 10 is the structure chart for another radio-frequency coil that the embodiment of the present invention is used.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The Faraday shield and reaction chamber of offer are described in detail.
The Faraday shield provided also referring to Fig. 4 A and Fig. 4 B, first embodiment of the invention, it includes conducting ring
Body 11, is formed with the conductive ferrule 11 and cracks, and this cracks and cracks 111 including the first son, and first son cracks 111 along conduction
The circumferencial direction of ring body is set, and the formation angle a between the axis of conductive ferrule 11.By being looped around around the conductive ferrule 11
The electromagnetic field that produces of radio-frequency coil 13 can be divided into magnetic-field component A in the axial direction of conductive ferrule 11 and conductive ferrule 11
Electric field component B on circumferencial direction.111 are cracked by using above-mentioned first son, the magnetic-field component A in the axial direction of conductive ferrule 11
Subcomponent on the incline direction that first son cracks 111 can be cracked in 111 feed-in reaction chambers by the first son, simultaneously
Subcomponents of the electric field component B on the incline direction that first son cracks 111 on the circumferencial direction of conductive ferrule 11 can lead to
The first son is crossed to crack in 111 feed-in reaction chambers.
Poynting vector (Poynting vector) refers to the Poynting vector in electromagnetic field, represents in the unit interval
By the energy of vertical unit area, unit for watt/(rice).Assuming that the electric-field intensity of certain is E in space, magnetic field intensity is
H, then energy-flux density of electromagnetic field is S=E × H at this, and direction is determined by E and H by right-hand screw rule.The energy of electromagnetic field at this
The size of current density is | S |=| E | | H | sin θ, wherein, θ is E and H angle.
Based on above-mentioned principle, if as cracked in the prior art along the axially arranged of conductive ferrule 11, E ≈ 0, so S ≈
0.Assuming that above-mentioned first son cracks, the angle a formed between 111 and the axis of conductive ferrule 11 is 45 °, then θ=45 °, in substitution
Stating formula is：| S |=| E | cos45 ° × | H | sin45 ° × sin45 °.It follows that cracked by above-mentioned first son 111 energy
Current density is more than by the prior art along the axially arranged energy-flux density cracked of conductive ferrule 11, so as to add electromagnetism
Total coupling efficiency of field, so as to reduce the radio-frequency power for needing to load to radio-frequency coil 13, i.e. penetrated even if loading is relatively low
Frequency power, can also realize plasma starter, maintain certain processing speed, and use the independent starter of Top electrode, with
When substrate dielectric layer is low-k materials, the damage to the substrate dielectric layer is reduced.In addition, the relatively low radio-frequency power of loading may be used also
To avoid the temperature of Faraday shield too high, so as to reduce the risk of reaction chamber particle contamination.
It is preferred that, the crack angle a that is formed between 111 and the axis of conductive ferrule 11 of first son is 45 °, and this can make
By the first son crack 111 length it is maximum so that energy-flux density is maximum, and then farthest add total coupling of electromagnetic field
Close efficiency.
It should be noted that in the present embodiment, the first son cracks 111 linearly, but the invention is not limited in
This, in actual applications, the first son crack 111 can also be in polyline shaped or arc shaped etc., as long as electromagnetic field can be increased
The coupling efficiency of magnetic-field component on the circumferencial direction of conductive ferrule 11, to reach the total coupling efficiency for increasing the electromagnetic field
Purpose.
As a preferred scheme of the present embodiment, as shown in Figure 4 C, it is above-mentioned crack cracked in above-mentioned first son 111 base
On plinth, also it is additionally arranged the second son and cracks 112, second son cracks 112 along the axially arranged of conductive ferrule 11, and is opened with the first son
Seam 111 intersects, and forms angle b.112 are cracked by the second son, can further increase above-mentioned magnetic-field component A coupling effect
Rate.
In the present embodiment, the first son cracks 111 is fully disconnected conductive ferrule between two end faces of conductive ferrule 11
11, to avoid producing eddy-current loss and heating in conductive ferrule 11.Moreover, the second son cracks 112 the two of conductive ferrule 11
Breaking part conductive ferrule 11 between individual end face, i.e. the second son crack 112 not by conductive ferrule 11 at two of conductive ferrule 11
It is fully disconnected between end face, so as to keep the monolithic construction of conductive ferrule 11.
In order on the premise of magnetic coupling efficiency is not influenceed, be avoided as much as being located at zero on the inside of Faraday shield
Cracking, place is corroded part (such as medium cylinder), and the span of the width h cracked is in 2~10mm, preferably in 5-8mm.Open
The width h of seam be above-mentioned first son crack 111 and second son crack 112 width, and the first son crack 111 and second son
Cracking 112 width can be with identical, or can also be different.
As shown in Figure 4 D, in order to avoid the part (such as medium cylinder) on the inside of Faraday shield is rotten at place of cracking
Erosion, can also in cracking filled media material 12, the dielectric material 12 be, for example, ceramics.Electromagnetic field can pass through the medium material
Expect in 12 feed-in reaction chambers.
It should be noted that in the present embodiment, the second son cracks 112 for one, but the invention is not limited in this,
In actual applications, as shown in Figure 4 E, crack 112 can also be to be multiple for above-mentioned second son, and multiple second sons crack 112 along the
Crack 111 bearing of trend (incline direction) of one son is spaced apart.
It should also be noted that, in the present embodiment, the second son, which cracks, 112 to crack with the first son and 111 intersects, but
It is that, the invention is not limited in this, in actual applications, the second son, which cracks, 112 to crack with the first son and 111 can also mutually divide
From.
It should also be noted that, in actual applications, above-mentioned crack can be to be one or more, and multiple crack along conduction
The circumferencial direction interval of ring body 11 and it is uniformly distributed, to ensure process uniformity.It is readily appreciated that, the quantity cracked is more, electromagnetism
Total coupling efficiency of field is bigger.
Referring to Fig. 5, the Faraday shield that second embodiment of the invention is provided, it includes conductive ferrule 21, led at this
It is formed with and cracks in electric ring body 21, first son set including two circumferencial directions along conductive ferrule 21 that cracks cracks 212,
And two the first sons crack 212 along conducting loop-shaped 21 axially spaced-apart be distributed, also, the first son crack 212 with conductive ferrule 21
Axis between the angle that is formed be 90 ° so that the electric field component B on the circumferencial direction of conductive ferrule 21 can pass through first
Son cracks in 212 feed-in reaction chambers.
Moreover, above-mentioned crack also includes cracking 211 along the second axially arranged son of conductive ferrule 21, second son cracks
211 crack with the first son 212 intersects.Because the second son cracks 211 along the axially arranged of conductive ferrule 21, it will can lead
In magnetic-field component A feed-in reaction chambers in the axial direction of electric ring body 11.
From the foregoing, it will be observed that by above-mentioned first son crack 212 and second son crack 211, can be respectively by above-mentioned electric field component B
In magnetic-field component A feed-in reaction chambers, this can only add the electromagnetic field compared with feed-in magnetic-field component A with prior art
Total coupling efficiency, so as to reduce the radio-frequency power for needing to load to radio-frequency coil, i.e. even if the relatively low radio frequency work(of loading
Rate, can also realize plasma starter, maintain certain processing speed, and use the independent starter of Top electrode, with substrate
When dielectric layer is low-k materials, the damage to the substrate dielectric layer is reduced.In addition, the relatively low radio-frequency power of loading can also be kept away
The temperature for exempting from Faraday shield is too high, so as to reduce the risk of reaction chamber particle contamination.
In the present embodiment, the second son cracks 211 is fully disconnected conductive ferrule between two end faces of conductive ferrule 21,
To avoid producing eddy-current loss and heating in conductive ferrule 11.Moreover, each first son cracks 212 the two of conductive ferrule 21
Breaking part conductive ferrule 21 between individual end face, i.e. the first son cracks 212 incomplete between two end faces of conductive ferrule 21
Conductive ferrule 21 is disconnected, so as to keep the monolithic construction of conductive ferrule 11.
In the present embodiment, the first son cracks 212 for two, still, the invention is not limited in this, in practical application
In, the first son crack 212 can also to be more than one, or three, and multiple first sons crack 212 with conductive ferrule 21
The angle formed between axis can be with identical, or can also be different.
Referring to Fig. 6, the Faraday shield that third embodiment of the invention is provided, it includes conductive ferrule 41, and is leading
Being divided on the circumferencial direction of electric ring body 41 has multiple first areas 411 and multiple second areas 412, and multiple first areas 411
It is alternate with multiple second areas 412 to set.Also, be provided with each first area 411 first son crack 42, and first son
It 42 is at least two to crack, and is spaced apart along the axial direction (that is, the Y-direction shown in Fig. 6) of conductive ferrule 41；Each second
It 43 is at least two to be provided with the second son in region 412 to crack that the 43, and second son cracks, and along the circumferencial direction of conductive ferrule 41
(that is, the X-direction shown in Fig. 6) is spaced apart.This, which can equally be realized, respectively presents above-mentioned electric field component B and magnetic-field component A
Enter in reaction chamber, so as to add total coupling efficiency of the electromagnetic field, and then can reduce what needs were loaded to radio-frequency coil
Radio-frequency power.
In order to ensure process uniformity, it is preferred that multiple first areas 411 and multiple second areas 412 are relative to conduction
The even circumferential distribution of ring body 41.Also, at least two first sons crack 42 to be uniformly distributed relative to first area 411；At least
Two the second sons crack 43 symmetrical relative to second area 412.
It is preferred that, width of the first area 411 on the circumferencial direction of conductive ferrule 41 is 50~200mm, with maximum limit
Degree ground reduction vortex.
The Faraday shield provided also referring to Fig. 7 A and Fig. 7 B, fourth embodiment of the invention, it is above-mentioned first
Improved on the basis of~3rd embodiment.Specifically, on conductive ferrule 31, and stop part is provided with cracking,
The stop part makes to crack forms tortuous passageway 34 between the external annulus and internal ring wall of conductive ferrule 31.The tortuous passageway can be
On the premise of not influenceing magnetic coupling efficiency, further avoid being located at the part (such as medium cylinder) on the inside of Faraday shield and exist
Place of cracking is corroded.
In the present embodiment, above-mentioned stop part is two, respectively the first stop part 32 and the second stop part 33, the two point
Be not arranged on conductive ferrule 31 in the first end face 331 and second end face 312 at place of cracking, the end of first end face 331 and second
The as conductive ferrule 31 of face 312, which is cracked, to be disconnected and two sections relative to each other.Wherein, the first stop part 32 is from first end
Face 311 extends towards second end face 312, and with the first gap 321 between second end face 312.First stop part 32 prolongs
Stretch the circumference that direction is preferably conductive ferrule 31.Second stop part 33 extends from second end face 312 towards first end face 331, and
There is the second gap 331 between first end face 331.In conductive ferrule 31 between first stop part 32 and the second stop part 33
Radially there is third space 341.First gap 321, the second gap 331 and third space 341 constitute above-mentioned tortuous passageway 34.
In actual applications, above-mentioned stop part can also use other arbitrary structures, as long as can be in conductive ferrule 31
Radially form mazy tortuous passageway, you can avoid the part being located on the inside of Faraday shield from being corroded at place of cracking.
In summary, the Faraday shield that each above-mentioned embodiment of the present invention is provided, it includes conductive ferrule, and at this
It is formed with and cracks on conductive ferrule, this cracks cracks including the first son, first son cracks is set along the circumferencial direction of conductive ferrule
Put, and angle is formed between the axis of conductive ferrule, to by increasing electromagnetic field on the circumferencial direction of conductive ferrule
The coupling efficiency of magnetic-field component, to increase total coupling efficiency of the electromagnetic field, needs to load to radio-frequency coil so as to reduce
Radio-frequency power, i.e. even if the relatively low radio-frequency power of loading, can also realize plasma starter, maintain certain processing speed
Rate, and the independent starter of Top electrode is used, when substrate dielectric layer is low-k material, to reduce the damage to the substrate dielectric layer
Wound.In addition, the relatively low radio-frequency power of loading can also avoid the temperature of Faraday shield too high, so as to reduce reaction chamber
The risk of particle contamination.
As another technical scheme, as shown in figure 8, the embodiment of the present invention also provides a kind of reaction chamber 201, it is anti-at this
Medium cylinder 203 is provided with the side wall 202 for answering chamber 201.Wrapping around for medium cylinder 203 is provided with radio-frequency coil 204, its
Electrically connected by upper adaptation 205 with upper radio-frequency power supply 206, upper radio-frequency power supply 206 is used to load radio frequency work(to radio-frequency coil 204
Rate, the electromagnetic field produced by radio-frequency coil 204 can be fed into reaction chamber 201 by medium cylinder 203, with provocative reaction chamber
Process gas formation plasma in room 201.Also, pedestal 209 is additionally provided with reaction chamber 201, it passes through lower
Orchestration 207 and lower radio-frequency power supply 208 are electrically connected, and lower radio-frequency power supply 208 is used to load radio frequency back bias voltage to pedestal 209, to attract
Plasma etching substrate surface.In addition, Faraday shield 210 is surrounded with the inner side of medium cylinder 203, for protecting
Medium cylinder 203 is not by plasma etching, while avoiding the residue sputtered out from substrate surface from being attached to medium cylinder 203
On inwall, so as to improve the energy coupling efficiency of medium cylinder 203, the particle contamination in reaction chamber 201 is reduced.The farad
Shielding part 210 can be grounded, or can also electric potential floating.
The Faraday shield that above-mentioned Faraday shield 201 is provided using each above-mentioned embodiment of the present invention.
As shown in figure 9, in the present embodiment, radio-frequency coil 204 is cylinder solid formula spiral winding, and the cylinder solid formula
The cross section of spiral winding is circle.But, the invention is not limited in this, the cylinder of other shape of cross sections can also be used
Three-dimensional spiral winding, it is preferred that as shown in Figure 10, radio-frequency coil 204 ' is using the cylinder solid formula helix in banding
Circle.The cylinder solid formula spiral winding of so-called banding, refers to the coil of banding wire body spiral winding formation.Also, cylinder solid
It is circular cylinder solid formula coil that the width W of any one circle subcoil of formula spiral winding in its axial direction, which is more than cross section,
The diameter of any one circle subcoil of (that is, the loop construction shown in Fig. 9), so as to so that the cylinder solid formula spiral of banding
The cross-sectional area of coil is more than cross-sectional area of the cross section for circular cylinder solid formula spiral winding.
The size of parasitic capacitance between cylinder solid formula spiral winding and Faraday shield and the cylinder solid formula spiral shell
The cross-sectional area of spin line circle is directly proportional.Moreover, the parasitic capacitance is smaller, then capacitive coupling is weaker, so that the reaction chamber being fed into
Electric-field intensity in room is weaker；Conversely, parasitic capacitance is bigger, then capacitive coupling is stronger, so that in the reaction chamber being fed into
Electric-field intensity is stronger, so that electric-field intensity realizes plasma electric field starter enough.Based on the theory, by by radio-frequency coil
204 ' using the cylinder solid formula spiral winding in banding, and makes the cross-sectional area of the cylinder solid formula spiral winding of banding big
In cross-sectional area of the cross section for circular cylinder solid formula spiral winding, above-mentioned parasitic capacitance can be increased, so as to increase
Strong capacitive coupling, and then the electric-field intensity in the reaction chamber being fed into can be strengthened.
It is preferred that, the axial spacing d between two circle subcoils of the arbitrary neighborhood of the cylinder solid formula spiral winding of banding
For 6-10mm, this can prevent spark phenomenon occur because there is potential difference between two adjacent circle subcoils.
In actual applications, the thickness of the cylinder solid formula spiral winding of banding in the radial direction thereof is 2-4mm.Moreover, band
Height of the height h of the cylinder solid formula spiral winding of shape no more than medium cylinder 203, i.e. the cylinder solid formula spiral of banding
The upper end of coil is less than the upper end of medium cylinder 203, the lower end of the cylinder solid formula spiral winding of banding, higher than medium cylinder 203
Lower end.
In actual applications, above-mentioned reaction chamber 201 can be pre-cleaning cavity.In this case, to above-mentioned radio frequency
The frequency for the radio-frequency power that coil 204 is loaded can be 2MHz, 13.56MHz or 60MHz etc..Or, arteries and veins can also be loaded
Rush the radio-frequency power formed.The frequency of the radio-frequency power loaded to said base 209 can be 400KHz, 2MHz, 13.56MHz
Or 60MHz etc..Or, can also load pulses formation radio-frequency power.Or, it can not also add to said base 209
The radio-frequency power of load.
Reaction chamber provided in an embodiment of the present invention, its above-mentioned method provided by using each above-mentioned embodiment of the present invention
Shielding part is drawn, can reduce needs the radio-frequency power that is loaded to radio-frequency coil, even if so that the relatively low radio-frequency power of loading,
Plasma starter can be realized, certain processing speed is maintained, and uses the independent starter of Top electrode, with substrate dielectric layer
During for low-k materials, the damage to the substrate dielectric layer is reduced.In addition, the relatively low radio-frequency power of loading can also avoid farad
The temperature of shielding part is too high, so as to reduce the risk of reaction chamber particle contamination.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (21)
1. a kind of Faraday shield, including conductive ferrule, are formed with the conductive ferrule and crack, it is characterised in that institute
State to crack and cracked including the first son, first son crack along the conductive ferrule circumferencial direction setting, and with the conduction
Angle is formed between the axis of ring body, to by increasing electric field component of the electromagnetic field on the circumferencial direction of the conductive ferrule
Coupling efficiency, to increase total coupling efficiency of the electromagnetic field.
2. Faraday shield according to claim 1, it is characterised in that first son cracks and the conductive ferrule
Axis between the angle that is formed be 45 °.
3. Faraday shield according to claim 1, it is characterised in that described crack also is included along the conductive ferrule
The second axially arranged son crack.
4. Faraday shield according to claim 3, it is characterised in that second son cracks to be opened with first son
Seam intersects.
5. Faraday shield according to claim 4, it is characterised in that second son cracks to be one or more,
And multiple second sons bearing of trend cracked along first son that cracks is spaced apart.
6. Faraday shield according to claim 3, it is characterised in that first son cracks in the conductive ferrule
Two end faces between be fully disconnected the conductive ferrule；
Second son cracks the conductive ferrule described in breaking part between two end faces of the conductive ferrule.
7. Faraday shield according to claim 3, it is characterised in that first son cracks in the conductive ferrule
Two end faces between conductive ferrule described in breaking part；
Second son cracks is fully disconnected the conductive ferrule between two end faces of the conductive ferrule.
8. Faraday shield according to claim 3, it is characterised in that first son cracks and the conductive ferrule
Axis between the angle that is formed be 90 °.
9. Faraday shield according to claim 8, it is characterised in that first son cracks to be one or more,
And multiple first sons crack and are distributed along the axially spaced-apart of the conductive ferrule.
10. Faraday shield according to claim 3, it is characterised in that on the circumferencial direction of the conductive ferrule
Division has a multiple first areas and multiple second areas, and multiple first areas and multiple second areas are alternate sets
Put；
First son is provided with each first area to crack, and first son cracks at least two, and edge
The axially spaced-apart distribution of the conductive ferrule；
Second son is provided with each second area to crack, and second son cracks at least two, and edge
The conductive ferrule it is multiple circumferentially spaced.
11. Faraday shield according to claim 10, it is characterised in that multiple first areas and multiple described
Second area is distributed relative to the even circumferential of the conductive ferrule；
First son described at least two cracks to be uniformly distributed relative to the first area；Second son described at least two cracks phase
It is symmetrical for the second area.
12. Faraday shield according to claim 10, it is characterised in that the first area is in the conductive ferrule
Circumferencial direction on width be 50~200mm.
13. Faraday shield according to claim 1, it is characterised in that described to crack to be one or more and multiple
It is described to crack along the circumferencial direction interval of the conductive ferrule and be uniformly distributed.
14. Faraday shield according to claim 1, it is characterised in that on the conductive ferrule, and positioned at described
Stop part is provided with cracking, the stop part makes described crack be formed between the external annulus and internal ring wall of the conductive ferrule
Tortuous passageway.
15. Faraday shield according to claim 14, it is characterised in that the stop part is two, respectively the
One stop part and the second stop part, the two is separately positioned on the first end face and second at the place of cracking of the conductive ferrule
On end face, wherein,
First stop part extends from the first end face towards the second end face, and has between the second end face
First gap；
Second stop part extends from the second end face towards the first end face, and has between the first end face
Second gap；
Radially there is third space in the conductive ferrule between first stop part and the second stop part；
First gap, the second gap and third space constitute the tortuous passageway.
16. Faraday shield according to claim 1, it is characterised in that dielectric material is filled with described crack.
17. Faraday shield according to claim 1, it is characterised in that the span of the width cracked is 2
~10mm.
18. a kind of reaction chamber, including medium cylinder, Faraday shield and radio-frequency coil, the radio-frequency coil are circumferentially positioned at
The outside of the medium cylinder；The Faraday shield is circumferentially positioned at the inner side of the medium cylinder, it is characterised in that the method
Shielding part is drawn using the Faraday shield described in claim 1-17 any one.
19. reaction chamber according to claim 18, it is characterised in that the radio-frequency coil is the cylinder solid in banding
Formula spiral winding；The width of any one circle subcoil of the cylinder solid formula spiral winding in its axial direction is more than cross section
The diameter of any one circle subcoil of circular cylinder solid formula spiral winding.
20. reaction chamber according to claim 19, it is characterised in that any phase of the cylinder solid formula spiral winding
Axial spacing between two adjacent circle subcoils is 6-10mm.
21. reaction chamber according to claim 18, it is characterised in that the reaction chamber is pre-cleaning cavity.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623037.3A CN107301943A (en) | 2017-07-27 | 2017-07-27 | Faraday shield and reaction chamber |
| TW107116881A TWI681436B (en) | 2017-07-27 | 2018-05-17 | Faraday shield and reaction chamber |
| PCT/CN2018/087510 WO2019019780A1 (en) | 2017-07-27 | 2018-05-18 | Faraday shield and reaction chamber |
| SG11202000515TA SG11202000515TA (en) | 2017-07-27 | 2018-05-18 | Faraday shield and reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623037.3A CN107301943A (en) | 2017-07-27 | 2017-07-27 | Faraday shield and reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107301943A true CN107301943A (en) | 2017-10-27 |
Family
ID=60133317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710623037.3A Pending CN107301943A (en) | 2017-07-27 | 2017-07-27 | Faraday shield and reaction chamber |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN107301943A (en) |
| SG (1) | SG11202000515TA (en) |
| TW (1) | TWI681436B (en) |
| WO (1) | WO2019019780A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019780A1 (en) * | 2017-07-27 | 2019-01-31 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN113903649A (en) * | 2021-09-23 | 2022-01-07 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015545A1 (en) * | 1994-11-15 | 1996-05-23 | Mattson Technology, Inc. | Inductive plasma reactor |
| EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
| CN1555568A (en) * | 2001-07-27 | 2004-12-15 | ��ķ�о�����˾ | Method and apparatus for producing uniform process rates |
| CN102543645A (en) * | 2010-12-14 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing device |
| WO2015172549A1 (en) * | 2014-05-13 | 2015-11-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semi-conductor processing device |
| CN105655221A (en) * | 2014-11-12 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device |
| CN207183209U (en) * | 2017-07-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789011B (en) * | 2014-12-24 | 2018-01-26 | 中微半导体设备(上海)有限公司 | Inductively type plasma processing apparatus |
| US9767996B2 (en) * | 2015-08-21 | 2017-09-19 | Lam Research Corporation | Application of powered electrostatic faraday shield to recondition dielectric window in ICP plasmas |
| CN107301943A (en) * | 2017-07-27 | 2017-10-27 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
-
2017
- 2017-07-27 CN CN201710623037.3A patent/CN107301943A/en active Pending
-
2018
- 2018-05-17 TW TW107116881A patent/TWI681436B/en active
- 2018-05-18 SG SG11202000515TA patent/SG11202000515TA/en unknown
- 2018-05-18 WO PCT/CN2018/087510 patent/WO2019019780A1/en active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996015545A1 (en) * | 1994-11-15 | 1996-05-23 | Mattson Technology, Inc. | Inductive plasma reactor |
| US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
| US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
| CN1555568A (en) * | 2001-07-27 | 2004-12-15 | ��ķ�о�����˾ | Method and apparatus for producing uniform process rates |
| CN102543645A (en) * | 2010-12-14 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing device |
| WO2015172549A1 (en) * | 2014-05-13 | 2015-11-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semi-conductor processing device |
| CN105655221A (en) * | 2014-11-12 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing device |
| CN207183209U (en) * | 2017-07-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019780A1 (en) * | 2017-07-27 | 2019-01-31 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN110660635B (en) * | 2018-06-29 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN113903649A (en) * | 2021-09-23 | 2022-01-07 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN113903649B (en) * | 2021-09-23 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI681436B (en) | 2020-01-01 |
| SG11202000515TA (en) | 2020-02-27 |
| WO2019019780A1 (en) | 2019-01-31 |
| TW201911362A (en) | 2019-03-16 |
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