CN107301842A - A kind of OLED pixel drive circuit and image element driving method - Google Patents
A kind of OLED pixel drive circuit and image element driving method Download PDFInfo
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- CN107301842A CN107301842A CN201710707276.7A CN201710707276A CN107301842A CN 107301842 A CN107301842 A CN 107301842A CN 201710707276 A CN201710707276 A CN 201710707276A CN 107301842 A CN107301842 A CN 107301842A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
Abstract
The present invention provides a kind of OLED pixel drive circuit and image element driving method, and the drive circuit includes：The grid of 3rd thin film transistor (TFT) accesses the first scanning signal, the source electrode access data voltage of the 3rd thin film transistor (TFT)；The grid of the first film transistor is connected with the source electrode of second thin film transistor (TFT) and one end of the electric capacity respectively, the other end ground connection of the electric capacity；The source electrode of 4th thin film transistor (TFT) is connected with one end of the electric capacity, and the drain electrode of the 4th thin film transistor (TFT) is connected with the other end of the electric capacity；The grid of 4th thin film transistor (TFT) accesses the second scanning signal；The grid of second thin film transistor (TFT) accesses the first scanning signal, and the drain electrode of second thin film transistor (TFT) is connected with the drain electrode of the first film transistor and the drain electrode of the 6th thin film transistor (TFT).The OLED pixel drive circuit and image element driving method of the present invention, it is possible to increase the show uniformity and luminous efficiency of panel.
Description
【Technical field】
The present invention relates to display technology field, more particularly to a kind of OLED pixel drive circuit and image element driving method.
【Background technology】
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, definition and contrast is high, nearly 180 ° of visual angles, temperature in use scope
Width, can be achieved many advantages, such as Flexible Displays are with large area total colouring, as the display device for most having development potentiality.
Traditional OLED pixel drive circuit is usually 2T1C, i.e., two thin film transistor (TFT)s add the structure of an electric capacity, will
Voltage transformation is electric current.
As shown in figure 1, the OLED pixel drive circuit of existing 2T1C structures, including first film transistor T10, second
Thin film transistor (TFT) T20, electric capacity C10 and Organic Light Emitting Diode D10, the first film transistor T10 are driving film crystal
Pipe, the second thin film transistor (TFT) T20 is switching thin-film transistor, and the electric capacity C10 is storage capacitance.Specifically, described
Two thin film transistor (TFT) T20 grid access scanning signal Gate, source electrode incoming data signal Data, it is thin that drain electrode is electrically connected with first
Film transistor T10 grid；The source electrode access power supply positive voltage OVDD of the first film transistor T10, drain electrode is electrically connected with
Organic Light Emitting Diode D10 anode；Organic Light Emitting Diode D10 negative electrode access power supply negative voltage OVSS.The one of electric capacity C10
End is electrically connected with first film transistor T10 grid, and the other end is electrically connected with first film transistor T10 source electrode.Should
2T1C pixel-driving circuits to OLED when being driven, and the electric current for flowing through Organic Light Emitting Diode D10 is met：
I=k × (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D10, and k is the intrinsic conduction factor of driving thin film transistor (TFT),
Vgs is the voltage difference between first film transistor T10 grids and source electrode, and Vth is first film transistor T10 threshold voltage,
It can be seen that the electric current for flowing through Organic Light Emitting Diode D10 is related to driving the threshold voltage of thin film transistor (TFT).
The factors such as the unstability due to panel processing procedure so that the driving film in panel in each pixel-driving circuit is brilliant
The threshold voltage of body pipe creates a difference.Even if equal data voltage to be applied to the driving film in each pixel-driving circuit
Transistor, the electric current that can also flow into Organic Light Emitting Diode is inconsistent, so as to influence the homogeneity of image quality.And
With driving thin film transistor (TFT) driving time it is elongated, aging, variation occurs in the material of thin film transistor (TFT), causes driving thin
The threshold voltage of film transistor produces drift, and the degree of aging of thin-film-transistor material is different, each driving thin film transistor (TFT)
Threshold voltage shift amount is also different, so as to the uneven phenomenon of Display panel occur, while can make the unlatching of driving thin film transistor (TFT)
Voltage rises, and flows into the current reduction of Organic Light Emitting Diode, causes the problems such as panel luminance reduction, luminous efficiency decline.
Therefore, it is necessary to provide a kind of OLED pixel drive circuit and image element driving method, deposited with solving prior art
The problem of.
【The content of the invention】
It is an object of the invention to provide a kind of OLED pixel drive circuit and image element driving method, it is possible to increase panel shows
Homogeneity, the brightness of panel and the luminous efficiency shown.
In order to solve the above technical problems, the present invention provides a kind of OLED pixel drive circuit, it includes：
First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film
Transistor, the 6th thin film transistor (TFT), electric capacity and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode access of the 5th thin film transistor (TFT)
Power supply positive voltage, the drain electrode and described first drained respectively with the 3rd thin film transistor (TFT) of the 5th thin film transistor (TFT)
The source electrode connection of thin film transistor (TFT)；
The grid of 3rd thin film transistor (TFT) accesses the first scanning signal, the source electrode access of the 3rd thin film transistor (TFT)
Data voltage；
The grid of the first film transistor respectively with the source electrode of second thin film transistor (TFT) and the electric capacity
One end is connected, the other end ground connection of the electric capacity；The source electrode of 4th thin film transistor (TFT) is connected with one end of the electric capacity, institute
The drain electrode for stating the 4th thin film transistor (TFT) is connected with the other end of the electric capacity；The grid access second of 4th thin film transistor (TFT)
Scanning signal；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) and institute
State the drain electrode of first film transistor and the drain electrode connection of the 6th thin film transistor (TFT)；
The grid of 6th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode of the 6th thin film transistor (TFT) and institute
State the anode connection of Organic Light Emitting Diode, the negative electrode access power supply negative voltage of the Organic Light Emitting Diode.
In the OLED pixel drive circuit of the present invention, the first film transistor, second thin film transistor (TFT), institute
State the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT)
It is one kind in low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon film transistor.
In the OLED pixel drive circuit of the present invention, first scanning signal, second scanning signal and institute
The 3rd scanning signal is stated to produce by outside time schedule controller.
In the OLED pixel drive circuit of the present invention, the first film transistor, second thin film transistor (TFT), institute
State the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT)
It is P-type TFT.
In the OLED pixel drive circuit of the present invention, first scanning signal, second scanning signal and institute
The 3rd scanning signal is stated combined, successively corresponding to initial phase, threshold voltage memory phase and luminescence display stage；
In the initial phase, first scanning signal and the 3rd scanning signal are high potential, described second
Scanning signal is low potential；
In the threshold voltage memory phase, first scanning signal is low potential, second scanning signal and institute
It is all high potential to state the 3rd signal；
In the luminescence display stage, first scanning signal and second scanning signal are all high potential, described
3rd scanning signal is low potential.
The present invention also provides a kind of OLED pixel driving method, and it comprises the following steps：
OLED pixel drive circuit is provided；
Into initial phase；
Into threshold voltage memory phase；And
Into the luminescence display stage；
Wherein described OLED pixel drive circuit includes：
First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film
Transistor, the 6th thin film transistor (TFT), electric capacity and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode access of the 5th thin film transistor (TFT)
Power supply positive voltage, the drain electrode and described first drained respectively with the 3rd thin film transistor (TFT) of the 5th thin film transistor (TFT)
The source electrode connection of thin film transistor (TFT)；
The grid of 3rd thin film transistor (TFT) accesses the first scanning signal, the source electrode access of the 3rd thin film transistor (TFT)
Data voltage；
The grid of the first film transistor respectively with the source electrode of second thin film transistor (TFT) and the electric capacity
One end is connected, the other end ground connection of the electric capacity；The source electrode of 4th thin film transistor (TFT) is connected with one end of the electric capacity, institute
The drain electrode for stating the 4th thin film transistor (TFT) is connected with the other end of the electric capacity；The grid access second of 4th thin film transistor (TFT)
Scanning signal；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) and institute
State the drain electrode of first film transistor and the drain electrode connection of the 6th thin film transistor (TFT)；
The grid of 6th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode of the 6th thin film transistor (TFT) and institute
State the anode connection of Organic Light Emitting Diode, the negative electrode access power supply negative voltage of the Organic Light Emitting Diode；
In the initial phase, first scanning signal provides high potential, and second and third described thin film transistor (TFT) is closed
Close；Second scanning signal provides low potential, and the 4th thin film transistor (TFT) is opened；3rd scanning signal provides high electricity
Position, the five, the 6th thin film transistor (TFT) is closed；The voltage of the grid of the first film transistor is equal to ground voltage；
In threshold voltage memory phase, first scanning signal provides low potential, and second and third described thin film transistor (TFT) is beaten
Open；Second scanning signal provides high potential, and the 4th thin film transistor (TFT) is closed；3rd scanning signal provides high electricity
Position, the five, the 6th thin film transistor (TFT) is closed；The voltage of the source electrode of the first film transistor is equal to data electricity
Pressure, the voltage change of the grid of the first film transistor is to Vdata-Vth, and wherein Vdata is data voltage, and Vth is institute
State the threshold voltage of first film transistor；
In the luminescence display stage, first scanning signal provides high potential, and second and third described thin film transistor (TFT) is closed
Close；Second scanning signal provides high potential, and the 4th thin film transistor (TFT) is closed；3rd scanning signal provides low electricity
Position, the five, the 6th thin film transistor (TFT) is opened；The organic light-emitting diode, and flow through the organic light-emitting diodes
The electric current of pipe is unrelated with the threshold voltage of the first film transistor.
In the OLED pixel driving method of the present invention, in the luminescence display stage, the first film transistor
The voltage change of source electrode is to power supply positive voltage, and the voltage of the grid of the first film transistor keeps constant, to flow through
The electric current for stating Organic Light Emitting Diode is unrelated with the threshold voltage of the first film transistor.
In the OLED pixel driving method of the present invention, the first film transistor, second thin film transistor (TFT), institute
State the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT)
It is one kind in low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon film transistor.
In the OLED pixel driving method of the present invention, first scanning signal, second scanning signal and institute
The 3rd scanning signal is stated to produce by outside time schedule controller.
In the OLED pixel driving method of the present invention, the first film transistor is driving thin film transistor (TFT), described
6th thin film transistor (TFT) is switching thin-film transistor.
The OLED pixel drive circuit and image element driving method of the present invention, by changing to existing pixel-driving circuit
Enter, so as to eliminate influence of the threshold voltage of driving thin film transistor (TFT) to Organic Light Emitting Diode, improve Display panel equal
Even property, also avoid the problems such as luminance-reduction, luminous efficiency that panel occurs with the aging of OLED decline in addition.
【Brief description of the drawings】
Fig. 1 is the circuit diagram for the 2T1C pixel-driving circuits for being currently used for OLED；
Fig. 2 is the circuit diagram for the 8T1C pixel-driving circuits for being currently used for OLED；
Fig. 3 is the circuit diagram for the 7T1C pixel-driving circuits for being currently used for OLED；
Fig. 4 is the circuit diagram of the OLED pixel drive circuit of the present invention；
Fig. 5 is the timing diagram of the OLED pixel drive circuit of the present invention；
Fig. 6 is the schematic diagram of the step 2 of the OLED pixel driving method of the present invention；
Fig. 7 is the schematic diagram of the step 3 of the OLED pixel driving method of the present invention；
Fig. 8 is the schematic diagram of the step 4 of the OLED pixel driving method of the present invention.
【Embodiment】
The explanation of following embodiment is the particular implementation implemented to illustrate the present invention can be used to reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as " on ", " under ", "front", "rear", "left", "right", " interior ", " outer ", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used is to illustrate and understand the present invention, and is not used to
The limitation present invention.In figure, the similar unit of structure is represented with identical label.
The problem of for driving thin film transistor (TFT) threshold voltage shift, can typically electricity be driven to OLED pixel in the prior art
Road is improved, increase thin film transistor (TFT) and corresponding control signal, to be mended to the threshold voltage for driving thin film transistor (TFT)
Repay, make Organic Light Emitting Diode when luminous, flow through its electric current unrelated with driving the threshold voltage of thin film transistor (TFT).
As shown in Fig. 2 a kind of existing OLED pixel drive circuit uses 8T1C structure, namely eight thin film transistor (TFT)s
Plus the structure of an electric capacity, including first film transistor T31, the second thin film transistor (TFT) T32, the 3rd thin film transistor (TFT) T33,
It is four thin film transistor (TFT) T34, the 5th thin film transistor (TFT) T35, the 6th thin film transistor (TFT) T36, the 7th thin film transistor (TFT) T37, the 8th thin
Film transistor T38, electric capacity C30 and Organic Light Emitting Diode D30, the connected mode of specific each element is：First film transistor
T31 grid access scanning signal S2, source electrode access reference voltage Vref, drain electrode is electrically connected with electric capacity C30 one end and the
Seven thin film transistor (TFT) T37 source electrode, the electric capacity C30 other end and the 3rd thin film transistor (TFT) T33 source electrode and the 5th film are brilliant
Body pipe T35 grid connection, the 3rd thin film transistor (TFT) T33 the 4th thin film transistor (TFT) T34 of drain electrode connection source electrode and second
Thin film transistor (TFT) T32 drain electrode, the 3rd thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) T34 grid all access scanning signal
S2.Second thin film transistor (TFT) T32 grid access scanning signal S1, the second thin film transistor (TFT) T32 source electrode access initial voltage
Vini。
4th thin film transistor (TFT) T34 the 5th thin film transistor (TFT) T35 of drain electrode connection drain electrode and Organic Light Emitting Diode D30
Anode, Organic Light Emitting Diode D30 negative electrode access power supply negative voltage VSS, the 5th thin film transistor (TFT) T35 source electrode connection the
Eight thin film transistor (TFT) T38 drain electrode and the 7th thin film transistor (TFT) T37 drain electrode, the 7th thin film transistor (TFT) T37 source electrode and
Six thin film transistor (TFT) T36 drain electrode connection, the 6th thin film transistor (TFT) T36 source electrode access power supply positive voltage VDD, the 6th film is brilliant
Body pipe T36 grid and the 7th thin film transistor (TFT) T37 grid all access scanning signal S3, the 8th thin film transistor (TFT) T38 grid
Pole access scanning signal S2, the 8th thin film transistor (TFT) T38 source electrode access data voltage Vdata.
Although above-mentioned 8T1C framework can eliminate driving TFT Vth, TFT used quantity is more, can reduce panel
Aperture opening ratio, so as to reduce display brightness, and more TFT is the problems such as can also produce parasitic capacitance.On the other hand, the framework is needed
Two additional power supplys Vref and Vini are wanted, cause hardware configuration more complicated.
As shown in figure 3, existing another OLED pixel drive circuit uses 7T1C structure, namely seven film crystals
The structure of Guan Jiayi electric capacity, including first film transistor T21, the second thin film transistor (TFT) T22, the 3rd thin film transistor (TFT) T23,
4th thin film transistor (TFT) T24, the 5th thin film transistor (TFT) T25, the 6th thin film transistor (TFT) T26, the 7th thin film transistor (TFT) T27, electric capacity
C20 and Organic Light Emitting Diode D20, the connected mode of specific each element is：Electric capacity C20 one end access power supply positive voltage
ELVDD, electric capacity the C20 other end connection Section Point b, the 7th thin film transistor (TFT) T27 grid access luminous signal En, source electrode
Access power supply positive voltage ELVDD, drain electrode connection first node a, first film transistor T21 grid access Section Point b, source
Pole connects first node a, and drain electrode connection the 3rd node c, the 3rd thin film transistor (TFT) T23 grid access the first scanning signal Sn,
Source electrode connects Section Point b, drain electrode connection the 3rd node c, the 4th thin film transistor (TFT) T24 grid access luminous signal En, source
Pole connects the 3rd node c, drain electrode connection fourth node d, Organic Light Emitting Diode D20 anode connection fourth node d, You Jifa
Optical diode D20 negative electrode access power supply negative voltage ELVSS, the 5th thin film transistor (TFT) T25 grid access the second scanning signal
Sn-1, drain electrode connection Section Point b, source electrode connection power supply negative voltage ELVSS, the 6th thin film transistor (TFT) T26 grid access the
Two scanning signal Sn-1, drain electrode connection fourth node d, source electrode connection power supply negative voltage ELVSS, the second thin film transistor (TFT) T22's
Grid accesses the first scanning signal Sn, source electrode access input data signal Dm, drain electrode connection first node a.
Although above-mentioned 7T1C compensation framework can eliminate driving TFT Vth, TFT used quantity is more, can cause
The aperture opening ratio of panel declines, so as to reduce display brightness, and greater number of TFT is the problems such as can produce other parasitic capacitances.
Fig. 4 is refer to, Fig. 4 is the circuit diagram of the OLED pixel drive circuit of the present invention.
As shown in figure 4, the OLED pixel drive circuit of the present invention includes first film transistor T1, the second thin film transistor (TFT)
T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, electric capacity C
And Organic Light Emitting Diode D1.Wherein described first film transistor T1 is driving thin film transistor (TFT), and the 6th film is brilliant
Body pipe T6 is switching thin-film transistor.
The connected mode of specific each element is as follows：The grid of the 5th thin film transistor (TFT) T5 accesses the 3rd scanning signal
S3, the 5th thin film transistor (TFT) T5 source electrode access power supply positive voltage OVDD, the 5th thin film transistor (TFT) T5 drain electrode point
It is not connected with the drain electrode of the 3rd thin film transistor (TFT) T3 and the source electrode of the first film transistor T1.
The grid of the 3rd thin film transistor (TFT) T3 accesses the first scanning signal S1, the source of the 3rd thin film transistor (TFT) T3
Pole access data voltage Vdata.
The source electrode and the electricity of the grid of the first film transistor T1 respectively with the second thin film transistor (TFT) T2
Hold C one end connection, the other end ground connection of the electric capacity C；The source electrode of the 4th thin film transistor (TFT) T4 and the one of the electric capacity C
End connection, the drain electrode of the 4th thin film transistor (TFT) T4 is connected with the other end of the electric capacity C；The 4th thin film transistor (TFT) T4
Grid access the second scanning signal S2.
The grid of the second thin film transistor (TFT) T2 accesses the first scanning signal S1, the leakage of the second thin film transistor (TFT) T2
Pole is connected with the drain electrode of the first film transistor T1 and the drain electrode of the 6th thin film transistor (TFT) T1.
The grid of the 6th thin film transistor (TFT) T6 accesses the 3rd scanning signal S3, the source of the 6th thin film transistor (TFT) T6
Pole is connected with the anode of the Organic Light Emitting Diode D1, the negative electrode access power supply negative voltage of the Organic Light Emitting Diode D1
OVSS。
The first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT)
T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
One kind in thin film transistor (TFT) and amorphous silicon film transistor.
The first scanning signal S1, the second scanning signal S2 and the 3rd scanning signal S3 pass through outside SECO
Device is produced.
The first film transistor T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th thin film transistor (TFT)
T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are P-type TFT.
The first scanning signal S1, the second scanning signal S2 and the 3rd scanning signal S3 are combined, successively correspond to
One initial phase, a threshold voltage memory phase and a luminescence display stage.
Based on above-mentioned OLED pixel drive circuit, the present invention also provides a kind of OLED pixel driving method, including following step
Suddenly：
S101, one OLED pixel drive circuit of offer.
It is specific to refer to Fig. 4 and above, it will not be repeated here.
S102, into initial phase.
With reference to Fig. 5 and 6, in the initial phase namely t0-t1 periods, the first scanning signal S1 and the described 3rd
Scanning signal S3 is high potential；The second scanning signal S2 is low potential.
The first scanning signal S1 provides high potential, and described second and third thin film transistor (TFT) T2, T3 are closed；Described second
Scanning signal S2 provides low potential, and the 4th thin film transistor (TFT) T4 is opened；The 3rd scanning signal S3 provides high potential, institute
State the five, the 6th thin film transistor (TFT) T5, T6 closings；Because the 4th thin film transistor (TFT) T4 is opened, the first film crystal
Pipe T1 grid (g points) is discharged by T4 so that the voltage Vg of the grid of the first film transistor T1 is equal to ground voltage
GND。
Because the 6th thin film transistor (TFT) T6 is closed, therefore Organic Light Emitting Diode D1 is not lighted, and this stage is completed to g points electricity
The initialization of position.
S103, into threshold voltage memory phase.
With reference to Fig. 5 and 7, in the threshold voltage memory phase namely t1-t2 periods, the first scanning signal S1 is low electricity
Position, the second scanning signal S2 and the 3rd signal S3 are high potential.
The first scanning signal S1 provides low potential, and described second and third thin film transistor (TFT) T2, T3 are opened；Described second
Scanning signal S2 provides high potential, and the 4th thin film transistor (TFT) T4 is closed；The 3rd scanning signal S3 provides high potential, institute
State the five, the 6th thin film transistor (TFT) T5, T6 closings.
Because the 3rd thin film transistor (TFT) T3 is opened, Vdata passes through source electrodes of the T3 to the first film transistor T1
(s points) is charged so that the voltage Vs of the source electrode of the first film transistor T1 is equal to data voltage Vdata.Due to
Two thin film transistor (TFT) T2 are opened, and the four, the six film crystal T4, T6 are closed, and g point current potentials are charged by T2, T1, T3, until s
Cramping between point and g points ends when being the threshold voltage vt h of driving thin film transistor (TFT) (T1).
Due to meeting following formula between Vs and Vg：
Vs-Vg=Vth；
Wherein Vs=Vdata；
With reference to above formula, then there is the Vg to be：
Vg=Vdata-Vth.
Namely the voltage change of the grid of the first film transistor T1 is to Vdata-Vth, wherein Vdata is data electricity
Pressure, Vth is the threshold voltage of the first film transistor T1.
Because the 6th thin film transistor (TFT) T6 is closed, therefore Organic Light Emitting Diode D1 does not light.This stage is completed to g points electricity
The storage of position.
S104, into the luminescence display stage.
With reference to Fig. 5 and 8, in luminescence display stage namely t2-t3 periods, the first scanning signal S1 and described second is swept
It is all high potential to retouch signal S2, and the 3rd scanning signal S3 is low potential.
The first scanning signal S1 provides high potential, and described second and third thin film transistor (TFT) T2, T3 are closed；Described second
Scanning signal S2 provides high potential, and the 4th thin film transistor (TFT) T4 is closed；The 3rd scanning signal S3 provides low potential, institute
State the five, the 6th thin film transistor (TFT) T5, T6 openings.
Because the five, the six thin film transistor (TFT) T5, T6 are opened, the Organic Light Emitting Diode D1 lights, and flows through and described have
Machine light emitting diode D1 electric current is unrelated with the threshold voltage of the first film transistor T1.
Specifically, because the second thin film transistor (TFT) T2 is closed, g point current potentials namely the first film transistor T1 grid
Voltage Vg keep constant, namely voltage during with threshold voltage memory phase is consistent, and Vg is as follows：
Vg=Vdata-Vth；
Because the 3rd thin film transistor (TFT) T3 is closed, the 5th thin film transistor (TFT) T5 is opened, and OVDD is brilliant to the first film by T5
Body pipe T1 source electrode is charged so that s point current potentials Vs is changed into as follows：
Vs=OVDD；
Cramping Vsg between s points and g points, is now changed into as follows：
Vsg=Vs-Vg=OVDD-(Vdata-Vth)=OVDD-Vdata+Vth；
Because the electric current for flowing through Organic Light Emitting Diode D1 is met：
I=k (Vsg-Vth)2
With reference to above formula, the electric current for obtaining finally flowing through Organic Light Emitting Diode D1 is：
I=k (OVDD-Vdata)2
As can be seen here, the threshold voltage vt h of Organic Light Emitting Diode D1 electric current and driving thin film transistor (TFT) (T1) is flowed through
It is unrelated, influences of the threshold voltage vt h to Organic Light Emitting Diode is eliminated, so as to improve the uniformity of Display panel and light
Efficiency.
The OLED pixel drive circuit and image element driving method of the present invention, by changing to existing pixel-driving circuit
Enter, so as to eliminate influence of the threshold voltage of driving thin film transistor (TFT) to Organic Light Emitting Diode, improve Display panel equal
Even property, also avoid the problems such as luminance-reduction, luminous efficiency that panel occurs with the aging of OLED decline in addition.
In summary, although the present invention it is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit
The system present invention, one of ordinary skill in the art without departing from the spirit and scope of the present invention, can make various changes and profit
Adorn, therefore protection scope of the present invention is defined by the scope that claim is defined.
Claims (10)
1. a kind of OLED pixel drive circuit, it is characterised in that including：
First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), electric capacity and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode access power supply of the 5th thin film transistor (TFT)
Positive voltage, the drain electrode and the first film that drain respectively with the 3rd thin film transistor (TFT) of the 5th thin film transistor (TFT)
The source electrode connection of transistor；
The grid of 3rd thin film transistor (TFT) accesses the first scanning signal, the source electrode access data of the 3rd thin film transistor (TFT)
Voltage；
The grid of first film transistor source electrode respectively with second thin film transistor (TFT) and one end of the electric capacity
Connection, the other end ground connection of the electric capacity；The source electrode of 4th thin film transistor (TFT) is connected with one end of the electric capacity, and described
The drain electrode of four thin film transistor (TFT)s is connected with the other end of the electric capacity；The grid access second of 4th thin film transistor (TFT) is scanned
Signal；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) and described the
The drain electrode of one thin film transistor (TFT) and the drain electrode of the 6th thin film transistor (TFT) connection；
The grid of 6th thin film transistor (TFT) accesses the 3rd scanning signal, and the source electrode of the 6th thin film transistor (TFT) has with described
The anode connection of machine light emitting diode, the negative electrode access power supply negative voltage of the Organic Light Emitting Diode.
2. OLED pixel drive circuit as claimed in claim 1, it is characterised in that the first film transistor, described
Two thin film transistor (TFT)s, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and described
6th thin film transistor (TFT) is that low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon membrane are brilliant
One kind in body pipe.
3. OLED pixel drive circuit as claimed in claim 1, it is characterised in that first scanning signal, described second
Scanning signal and the 3rd scanning signal are produced by outside time schedule controller.
4. OLED pixel drive circuit as claimed in claim 1, it is characterised in that the first film transistor, described
Two thin film transistor (TFT)s, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and described
6th thin film transistor (TFT) is P-type TFT.
5. OLED pixel drive circuit as claimed in claim 4, it is characterised in that first scanning signal, described second
Scanning signal and the 3rd scanning signal are combined, successively corresponding to initial phase, threshold voltage memory phase and
The luminescence display stage；
In the initial phase, first scanning signal and the 3rd scanning signal are high potential, second scanning
Signal is low potential；
In the threshold voltage memory phase, first scanning signal is low potential, second scanning signal and described the
Three signals are all high potential；
In the luminescence display stage, first scanning signal and second scanning signal are all high potential, the described 3rd
Scanning signal is low potential.
6. a kind of OLED pixel driving method, it is characterised in that comprise the following steps：
OLED pixel drive circuit is provided；
Into initial phase；
Into threshold voltage memory phase；And
Into the luminescence display stage；
Wherein described OLED pixel drive circuit includes：
First film transistor, the second thin film transistor (TFT), the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), electric capacity and Organic Light Emitting Diode；
The grid of 5th thin film transistor (TFT) accesses the 3rd scanning signal, the source electrode access power supply of the 5th thin film transistor (TFT)
Positive voltage, the drain electrode and the first film that drain respectively with the 3rd thin film transistor (TFT) of the 5th thin film transistor (TFT)
The source electrode connection of transistor；
The grid of 3rd thin film transistor (TFT) accesses the first scanning signal, the source electrode access data of the 3rd thin film transistor (TFT)
Voltage；
The grid of first film transistor source electrode respectively with second thin film transistor (TFT) and one end of the electric capacity
Connection, the other end ground connection of the electric capacity；The source electrode of 4th thin film transistor (TFT) is connected with one end of the electric capacity, and described
The drain electrode of four thin film transistor (TFT)s is connected with the other end of the electric capacity；The grid access second of 4th thin film transistor (TFT) is scanned
Signal；
The grid of second thin film transistor (TFT) accesses the first scanning signal, the drain electrode of second thin film transistor (TFT) and described the
The drain electrode of one thin film transistor (TFT) and the drain electrode of the 6th thin film transistor (TFT) connection；
The grid of 6th thin film transistor (TFT) accesses the 3rd scanning signal, and the source electrode of the 6th thin film transistor (TFT) has with described
The anode connection of machine light emitting diode, the negative electrode access power supply negative voltage of the Organic Light Emitting Diode；
In the initial phase, first scanning signal provides high potential, and second and third described thin film transistor (TFT) is closed；Institute
State the second scanning signal and low potential is provided, the 4th thin film transistor (TFT) is opened；3rd scanning signal provides high potential, institute
State the closing of the five, the 6th thin film transistor (TFT)s；The voltage of the grid of the first film transistor is equal to ground voltage；
In threshold voltage memory phase, first scanning signal provides low potential, and second and third described thin film transistor (TFT) is opened；
Second scanning signal provides high potential, and the 4th thin film transistor (TFT) is closed；3rd scanning signal provides high potential,
Five, the 6th thin film transistor (TFT) is closed；The voltage of the source electrode of the first film transistor is equal to the data voltage, institute
The voltage change of grid of first film transistor is stated to Vdata-Vth, wherein Vdata is data voltage, and Vth is described first
The threshold voltage of thin film transistor (TFT)；
In the luminescence display stage, first scanning signal provides high potential, and second and third described thin film transistor (TFT) is closed；
Second scanning signal provides high potential, and the 4th thin film transistor (TFT) is closed；3rd scanning signal provides low potential,
Five, the 6th thin film transistor (TFT) is opened；The organic light-emitting diode, and flow through the Organic Light Emitting Diode
Electric current is unrelated with the threshold voltage of the first film transistor.
7. OLED pixel driving method as claimed in claim 6, it is characterised in that in the luminescence display stage, described
The voltage change of the source electrode of one thin film transistor (TFT) to power supply positive voltage, the voltage of the grid of the first film transistor is kept not
Become, it is unrelated with the threshold voltage of the first film transistor with the electric current for flowing through the Organic Light Emitting Diode.
8. OLED pixel driving method as claimed in claim 6, it is characterised in that the first film transistor, described
Two thin film transistor (TFT)s, the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and described
6th thin film transistor (TFT) is that low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor and amorphous silicon membrane are brilliant
One kind in body pipe.
9. OLED pixel driving method as claimed in claim 6, it is characterised in that first scanning signal, described second
Scanning signal and the 3rd scanning signal are produced by outside time schedule controller.
10. OLED pixel driving method as claimed in claim 6, it is characterised in that the first film transistor is driving
Thin film transistor (TFT), the 6th thin film transistor (TFT) is switching thin-film transistor.
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| CN201710707276.7A CN107301842A (en) | 2017-08-17 | 2017-08-17 | A kind of OLED pixel drive circuit and image element driving method |
| US15/574,027 US10192488B1 (en) | 2011-08-16 | 2017-10-27 | OLED pixel driving circuit and OLED pixel driving method |
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| CN201710707276.7A CN107301842A (en) | 2017-08-17 | 2017-08-17 | A kind of OLED pixel drive circuit and image element driving method |
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