CN107240769B - Low-profile dual-frequency ultra-wideband antenna - Google Patents
Low-profile dual-frequency ultra-wideband antenna Download PDFInfo
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- CN107240769B CN107240769B CN201710304396.2A CN201710304396A CN107240769B CN 107240769 B CN107240769 B CN 107240769B CN 201710304396 A CN201710304396 A CN 201710304396A CN 107240769 B CN107240769 B CN 107240769B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/20—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
Abstract
The invention provides a low-profile dual-frequency ultra-wideband antenna, which comprises at least one dual-frequency ultra-wideband oscillator unit, wherein the dual-frequency ultra-wideband oscillator unit comprises a pair of orthogonally arranged ultra-wideband oscillators printed on a dielectric substrate, and two arms of each ultra-wideband oscillator are fat blocks; arc-shaped grooves are formed in the two ends of the two arms of the ultra-wideband oscillator along the edges of the two sides, a section of arc-shaped branch is loaded at the end of the ultra-wideband oscillator along the outer edge of the oscillator arm, and a feed point is arranged at the center intersection and connected with a coaxial cable or a balun. The invention provides a low-profile dual-frequency ultra-wideband antenna with dual-frequency ultra-wideband (full frequency band), low profile, small size, MIMO (multiple input multiple output), high isolation and high gain for a mobile communication micro base station by adopting a thick high-dielectric-constant dielectric substrate, slotting on the surface of an oscillator and loading open-circuit branches at the tail end. The method has the characteristics of novel thought, clear principle, universality, simplicity in implementation, low cost, suitability for batch production and the like, is a preferred scheme for replacing the conventional broadband Small cell antenna, and is also applicable and effective to design and improvement of the conventional broadband crossed dipole antenna.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to mobile communication antenna equipment and technology, in particular to a low-profile dual-band ultra-wideband antenna and technology thereof.
[ background of the invention ]
Currently, mobile communication is in the 4G large-scale commercial era and starts to evolve gradually toward the 5G direction. Through newly building a large number of macro base stations, the mobile communication basically realizes the continuous coverage of wide area signals. The macro base station has high gain, large capacity, large coverage area and more users, but is difficult to select addresses, high in cost, low in data rate and difficult to cover local hot spot areas such as indoor and underground areas. Cellular networks rely on cell division to achieve frequency reuse. Naturally, in order to further increase the frequency reuse degree, one subdivides the cell into microcells, nanocells, picocells, and the like having smaller coverage areas, thereby significantly improving the coverage effect and increasing the system capacity, which becomes an effective means for solving deep coverage and high data rate. Due to the complex and various application scenes, the micro base station (Smallcell) antenna has a plurality of forms, but generally has the technical characteristics of miniaturization, low profile, ultra wide band, dual polarization and MIMO. After the antenna is designed into an ultra-wideband and MIMO (multiple input multiple output), the micro base station has the advantages of high capacity, high speed and low cost; the miniaturization and low profile of the antenna, in turn, allows for more concealed and easy site deployment, particularly in indoor environments that are highly sensitive to the antenna's appearance. However, for a micro base station antenna with strictly limited size, especially longitudinal height, it is extremely difficult to realize full-band ultra-wideband (698-960 MHz/1710-2700 MHz). The conventional element only covers high frequency or low frequency band and is about a quarter wavelength away from the floor, which makes the antenna have high longitudinal height (about 0.25. lambda.L), and can not meet the design requirement of low profile of the micro base station antenna.
Nevertheless, the outstanding advantages of crossed-element ultra-wideband and ± 45 ° dual polarization make it still one of the preferred solutions for micro base station antennas, but it is necessary to break through the technical bottleneck of too high profile. The invention carries out a series of innovations on the prior technical scheme, realizes the characteristics that the prior cross vibrator can not realize full frequency coverage, ultralow profile (less than or equal to 0.1. lambda.), high cross polarization and high isolation by adopting a dielectric substrate with high dielectric constant and thicker thickness, slotting on the surface of the vibrator and loading open circuit branches at the tail end, and meets the technical requirements of the micro base station antenna. The ultra-wideband element antenna can simultaneously cover a GSM frequency band (BW is 262MHz and 31.6 percent) and an LTE frequency band (698-960 MHz/1710-2600 MHz, VSWR is less than or equal to 2.24, BW is 890MHz and 41.3 percent), and has an ultra-low profile (approximately equal to 0.1. lambda.)
L，λ
LThe lowest working frequency in the air), plus or minus 45 degrees double linear polarization and high cross polarization (XPD)>20dB), high isolation (| S)
21|<40dB), directional radiation (out-of-plane antenna radiation), higher gain (G ═ 6.1-9.1dBi) and higher efficiency (η)
A78% or more). Then, at least two low-profile crossed oscillator units are arranged close to each other to form a MIMO array with high isolation, and the MIMO array is an ideal antenna scheme suitable for miniaturization of the micro base station. In addition, the method has the characteristics of novel thought, clear principle, universal method, simple realization, low cost, suitability for batch production and the like, is a preferred scheme for replacing the conventional broadband Small cell antenna, and is also applicable and effective to the design and improvement of the conventional broadband crossed dipole antenna.
[ summary of the invention ]
The invention aims to provide a low-profile dual-frequency ultra-wideband antenna with dual-frequency ultra-wideband, low profile, small size, MIMO, high isolation and high gain for a mobile communication micro base station.
In order to realize the purpose of the invention, the following technical scheme is provided:
the invention provides a low-profile dual-frequency ultra-wideband antenna which comprises at least one dual-frequency ultra-wideband oscillator unit, wherein the dual-frequency ultra-wideband oscillator unit comprises a pair of orthogonally arranged ultra-wideband oscillators printed on a medium substrate, two arms of each ultra-wideband oscillator are in a fat block shape, arc-shaped grooves are formed in the tail ends of the two arms of each ultra-wideband oscillator along the edges of the two sides, an arc-shaped branch is loaded at the tail end of each ultra-wideband oscillator along the outer edge of each oscillator arm, and a feed point is arranged at the central intersection position and connected with a coaxial cable or balun.
The invention provides a low-profile dual-frequency ultra-wideband antenna with dual-frequency ultra-wideband (full frequency band), low profile, small size, MIMO (multiple input multiple output), high isolation and high gain for a mobile communication micro base station by adopting a thick high-dielectric-constant dielectric substrate, slotting on the surface of an oscillator and loading open-circuit branches at the tail end. The method has the characteristics of novel thought, clear principle, universality, simplicity in implementation, low cost, suitability for batch production and the like, is a preferred scheme for replacing the conventional broadband Small cell antenna, and is also applicable and effective to design and improvement of the conventional broadband crossed dipole antenna.
Preferably, the top of the arc-shaped slot is positioned on the axis of +/-45 degrees and protrudes outwards, and the bottom of the arc-shaped slot extends to the middle lower part of the edge of the oscillator arm.
Preferably, a pair of short piles is symmetrically loaded at the nearly middle position of the arc-shaped groove and connected with the inner wall and the outer wall of the arc-shaped groove.
Preferably, the starting position of the arc-shaped branch is provided with an arc segment for short circuit connection, the middle of the arc-shaped branch is provided with a longitudinal groove, and a gap exists between the tail ends of the adjacent arc-shaped branches.
Preferably, the starting end of the arc-shaped branch section is a parallel double-conductor section, the middle section is wider and is provided with a longitudinal groove, and the tail end of the arc-shaped branch section is slightly narrower and extends to the tail end of the arc-shaped groove to be disconnected; the two arms of the arc limb are connected at the beginning and end of the parallel double conductor section by two concentric arc sections, preferably symmetrical about a ± 45 ° central axis.
Preferably, the two arms of the ultra-wideband oscillator are symmetrical along a central axis of +/-45 degrees, the arc-shaped groove is symmetrical about the central axis of +/-45 degrees, and the arc-shaped branch is also symmetrical about the central axis of +/-45 degrees. Preferably, the arc-shaped groove and the short-circuit branch are both approximately parallel to the trend of the edge of the vibrator, and the short-circuit branch and the edge are spaced at a certain distance;
preferably, the dielectric substrate has a dielectric constant of ∈
r1-20, a loss angle tan delta and a thickness T
d＝0～0.25·λ
L，λ
LThe lowest frequency wavelength.
Preferably, a reflecting plate is provided on one side of the dielectric substrate, and the shortest distance between the reflecting plate and the dielectric substrate is preferably less than 0.25. lambda
L。
Preferably, the low-profile dual-frequency ultra-wideband antenna further comprises a radome, and the dual-frequency ultra-wideband oscillator unit is arranged in the radome.
Preferably, the corner of the radome is rounded or square.
Preferably, the low-profile dual-frequency ultra-wideband antenna comprises a MIMO array or a conventional array formed by two or more dual-frequency ultra-wideband oscillator units, and is arranged in an antenna housing.
Preferably, the feeding point is connected to two 50 Ω coaxial cables, and the inner and outer conductors of the cable are connected to the two arms of the vibrator, respectively.
Compared with the prior art, the invention has the following advantages:
the positive progress effect of the invention is that the following measures are taken: 1) optimizing the shape and size of the broadband oscillator; 2) optimizing an arc-shaped groove at the edge of the broadband oscillator; 3) optimizing the short-circuit branch at the tail end of the broadband vibrator; 4) selecting a proper dielectric substrate; 5) the reflecting plate is placed at a proper position; 6) the broadband vibrator pairs are superposed and orthogonally arranged in the center to form crossed vibrator pairs and feed in the center; 7) the cross oscillator pair MIMO array, thus the low-profile dual-frequency ultra-wideband antenna of the invention obtains the technical effect which is difficult to realize compared with the prior technical scheme: the dual-frequency ultra-wideband simultaneously covers GSM (0.698-0.96 GHz; VSWR is less than or equal to 2.24, BW is 262MHz, 31.6%) and LTE frequency bands (1.71-2.60GHz, VSWR is less than or equal to 2.24, BW is 890MHz, 41.3%); second, ultra-low profile, height less than 0.1. lambda
L(ii) a Triple, +/-45 DEG or H/V double linear polarization, high cross polarization ratio (XPD)>20dB) and high isolation (| S)
21|<40dB), four directional radiation with high gain (G ═ 6.1-9.1dBi), five high efficiency (η)
A≥78％)。
In addition, the method has the characteristics of novel thought, clear principle, universal method, simple realization, low cost, suitability for batch production and the like, is a preferred scheme for replacing the conventional broadband Small cell antenna, and is also applicable and effective to the design and improvement of the conventional broadband crossed dipole antenna.
[ description of the drawings ]
Fig. 1 is a schematic diagram of a rectangular coordinate system definition adopted by an antenna model.
Fig. 2 is a top view of a low-profile dual-frequency ultra-wideband fat block cross-dipole unit model.
FIG. 3 is a top view of a low-profile dual-frequency ultra-wideband cross vibrator unit edge-notched arc model.
Fig. 4 is a top view of a model of a low-profile dual-frequency ultra-wideband cross-dipole unit end without concentric bi-circular arc connection segments.
Fig. 5 is a top view of a complete model of a low-profile dual-band ultra-wideband cross-dipole unit radiator.
Fig. 6 is a model top view of a low-profile dual-frequency ultra-wideband cross element antenna without a coaxial feeder.
Fig. 7 is a perspective view of a model of a low-profile dual-band ultra-wideband cross-dipole element antenna without a coaxial feed line.
Fig. 8 is a front view of a low-profile dual-frequency ultra-wideband cross-dipole unit antenna strip coaxial feeder model.
Fig. 9 is a front view of a complete model of a low-profile dual-frequency ultra-wideband cross-dipole unit antenna with radome.
Figure 10 is a top view of a MIMO array of low profile dual frequency ultra-wideband cross dipole elements.
Figure 11 is a perspective view of a MIMO array of low profile dual frequency ultra-wideband cross-dipole elements.
FIG. 12 shows the input impedance Z of a low profile dual-band ultra-wideband cross-dipole unit
inA frequency characteristic curve.
Figure 13 shows a standing wave ratio VSWR plot for a low profile dual frequency ultra-wideband cross-dipole element.
FIG. 14 shows the reflection coefficient | S of a low profile dual frequency ultra-wideband cross-dipole element
11The | curve.
FIG. 15 shows port isolation | S for a low profile dual frequency ultra-wideband cross-dipole element
21The | curve.
FIG. 16 shows the low frequency f of a low profile dual frequency ultra wide band crossed dipole unit
1The 0.698GHz gain pattern.
FIG. 17 shows the low frequency f of a low profile dual frequency ultra wide band crossed oscillator unit
2The gain pattern is 0.96 GHz.
FIG. 18 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
31.71GHz gain pattern.
FIG. 19 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
42.17GHz gain pattern.
FIG. 20 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
52.60GHz gain pattern.
Fig. 21 shows the characteristic of the E/H-plane half-power beam width HBPW of the low-profile dual-frequency ultra-wideband cross-dipole unit as a function of frequency f.
Fig. 22 shows the maximum real gain versus frequency f characteristic of a low profile dual frequency ultra-wideband cross-dipole element.
FIG. 23 shows the efficiency η of a low profile dual-band ultra-wideband cross-dipole element
ACurve with frequency f.
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention without limiting or restricting the invention.
[ detailed description ] embodiments
The following provides a detailed description of the preferred embodiments of the invention with reference to the accompanying drawings. Here, a detailed description will be given of the present invention with reference to the accompanying drawings. It should be expressly understood that the preferred embodiments described herein are for purposes of illustration and explanation only and are not intended to limit or restrict the present invention.
Referring to fig. 1 to 11, the design method of the low-profile dual-band ultra-wideband antenna includes the following steps:
the invention relates to a low-profile dual-frequency ultra-wideband antenna, wherein a design method of the low-profile dual-frequency ultra-wideband antenna comprises the following steps:
step one, establishing a space rectangular coordinate system, as shown in figure 1;
step two, constructing a double-frequency ultra-wideband oscillator unit: firstly, constructing a pair of fatted block-shaped ultra-wideband vibrators 10 which are symmetrical around the center in the + 45-degree direction by taking a coordinate origin O as the center on an XOY plane, wherein the fatted block-shaped half-wave array 10 extends in the + 45-degree direction by taking the center as an initial point, the width is increased, and then the tail end is reduced and folded; then, the half-wave array 10 rotates by +90 degrees around the Z axis, and a-45-degree ultra-wideband oscillator 20 is duplicated, and two pairs of oscillators form a low-frequency (GSM frequency band) ultra-wideband crossed oscillator pair with the center as a feed point, as shown in FIG. 2;
step three, grooving at the edge of the ultra-wideband oscillator: opening a slender arc-shaped groove 24 along the edge at the tail ends of two arms of the ultra-wideband oscillator in the second step, wherein the arc-shaped groove is symmetrical about a +/-45-degree central axis of the oscillator, the top of the arc-shaped groove is positioned on the axis and protrudes outwards, as shown in a protruding part 22 in fig. 3, the bottom 21 extends to the middle part of the oscillator along the edge of the oscillator arm, then, symmetrically loading a pair of short piles 23 at the near-middle position of the arc-shaped groove, and connecting the inner wall and the outer wall of the arc-shaped groove 24, as shown in fig;
step four, loading the tail end of the ultra-wideband oscillator in an open circuit mode: loading a section of arc-shaped branch 32 at the tail end of the ultra-wideband oscillator in the third step along the outer edge of the oscillator arm, wherein the arc-shaped branch is also symmetrical about a central axis of +/-45 degrees, the starting end is wide, the middle of the arc-shaped branch is provided with a longitudinal groove 33, the tail end 34 is slightly narrow and extends to the tail end of the arc-shaped groove in the third step to be disconnected, a gap 63 exists between the tail ends of the adjacent arc-shaped branches, then, the starting position of the open-circuit branch is a parallel double-conductor section 31, and the symmetrical arc-shaped branches are connected in a short circuit mode through arc sections 41;
step five, ultra-wideband oscillator center coaxial feed: at the center of the two pairs of crossed oscillators in the step four, a pair of orthogonal feeding points is arranged, the two feeding points are respectively connected with a 50 omega coaxial cable, and the inner conductors 53 and 54 and the outer conductors 51 and 52 of the cable are respectively connected with two arms of the oscillators, as shown in fig. 5, 8 and 9;
step six, an antenna dielectric substrate is arranged: setting a layer of dielectric constant epsilon on the lower surface of the vibrator in the step five
rA loss angle tan delta and a thickness T
dThe dielectric substrate 70 of (a), for supporting the antenna and adjusting its impedance, see fig. 6 and 7;
step seven, arranging a metal reflecting plate: placing a large metal reflecting plate 90 on one side of the oscillator dielectric substrate 70 in the sixth step to realize the directional radiation of the oscillator, as shown in fig. 9;
step eight, antenna MIMO array: the low-profile dual-frequency ultra-wideband oscillator unit is used as a basic radiating unit to form an MIMO array so as to improve the system capacity and the network data rate of the system, as shown in FIGS. 10 and 11; (ii) a
Step nine, adding an antenna housing: a dielectric thin shell layer is arranged on the top surface close to the printed oscillator and serves as an antenna housing 80 to protect an antenna radiator, and the corner of the antenna housing is an arc angle 81, as shown in figures 9-11.
According to the low-profile dual-frequency ultra-wideband antenna, which is obtained through the construction, in the embodiment, the low-profile dual-frequency ultra-wideband antenna comprises two dual-frequency ultra-wideband oscillator units which form an MIMO array, the dual-frequency ultra-wideband oscillator units are printed on a pair of ultra-wideband oscillators 10 and 20 which are orthogonally arranged on a medium substrate, two arms of each ultra-wideband oscillator are fat blocks, arc-shaped grooves 24 are formed in the tail ends of the two arms of each ultra-wideband oscillator along the edges of the two sides, arc-shaped branches 32 are loaded on the tail ends of the ultra-wideband oscillators along the outer edges of the oscillator arms, and. Two arms of the ultra-wideband oscillator are symmetrical along a central axis of +/-45 degrees, and the arc-shaped grooves are symmetrical about the central axis of +/-45 degrees. The double-frequency ultra-wideband oscillator unit is arranged in an antenna housing 80, and corners of the antenna housing are fillets 81. The feeding point is connected to two 50 Ω coaxial cables, and the inner and outer conductors 51, 52, 53, and 54 of the cables are connected to the two arms of the transducer, respectively.
Specifically, the top of the arc-shaped slot 24 is positioned on the axis of +/-45 degrees and is provided with a convex part 22 outwards, and the bottom part 21 extends to the middle part along the edge of the oscillator arm; a pair of short piles 23 are symmetrically loaded at the near-middle position of the arc-shaped groove and are connected with the inner wall and the outer wall of the arc-shaped groove.
The starting end of the arc-shaped branch section 32 is a parallel double-conductor section 31, and two concentric arc sections 41 and 42 are arranged at the starting position for short-circuit connection, wherein the concentric arc sections are symmetrical about a central axis of +/-45 degrees. The middle section of the arc-shaped branch is wider and provided with a longitudinal groove 33, the tail end 34 is slightly narrower and extends to the tail end of the arc-shaped groove to be disconnected, and a gap 63 exists between the tail ends of the adjacent arc-shaped branches. The arc-shaped branches are also symmetrical about a central axis of ± 45 °. The arc-shaped groove and the short circuit branch are both approximately parallel to the trend of the edge of the vibrator, and the short circuit branch and the edge are separated by a certain distance.
The dielectric constant of the dielectric substrate is epsilon
r1-20, a loss angle tan delta and a thickness T
d＝0～0.25·λ
L。λ
LThe lowest frequency wavelength. A reflector plate is arranged on one side of the dielectric substrate, and the shortest distance between the reflector plate and the dielectric substrate is less than 0.25 lambda
L。
Compared with the prior art, the low-profile dual-frequency ultra-wideband antenna has the technical effects that: the dual-frequency ultra-wideband simultaneously covers GSM (0.698-0.96 GHz; VSWR is less than or equal to 2.24, BW is 262MHz, 31.6%) and LTE frequency bands (1.71-2.60GHz, VSWR is less than or equal to 2.24, BW is 890MHz, 41.3%); II,Ultra-low profile, height less than 0.1. lambda.
L(ii) a Three, +/-45 DEG double polarization and high cross polarization ratio (XPD)>20dB) and high isolation (| S)
21|<40dB), four directional radiation with high gain (G ═ 6.1-9.1dBi), five high efficiency (η)
A78% or more). Please refer to fig. 12-23 for specific characteristic curves and parameters.
FIG. 12 shows the input impedance Z of a low profile dual frequency ultra wide band cross-dipole unit
inA frequency characteristic curve. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the longitudinal axis (Y-axis) being the impedance Z
inIn units of Ω; solid line represents real part R
inThe dotted line represents the imaginary part X
in. As shown in the figure, in the frequency band of 0.698-0.96/1.71-2.60GHz, the variation ranges of the real part and the imaginary part are respectively as follows: 35-40 omega, -30-10 omega, 30-110 omega, -25-38 omega, and has better dual-frequency ultra-wideband impedance characteristic.
Figure 13 shows a standing wave ratio VSWR plot for a low profile dual frequency ultra-wideband cross-dipole element. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the vertical axis (Y-axis) is VSWR. The figure shows that the antenna realizes better impedance matching in a GSM 0.698-0.96GHz frequency band (BW is 262MHz and 31.6%) and an LTE 1.71-2.60GHz frequency band (BW is 890MHz and 41.3%), and the standing-wave ratio VSWR is less than or equal to 2.24 and is as low as 1.24; the relative bandwidth of the two frequency bands is 31.6 percent and 41.3 percent respectively, and the double-frequency ultra-wide bandwidth is realized.
FIG. 14 shows the reflection coefficient | S of a low profile dual frequency ultra-wideband cross-dipole element
11|/|S
22The | curve. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the longitudinal axis (Y-axis) being S
11/S
22Amplitude of (S)
11|/|S
22And | in dB. It is known from the figure that the antenna realizes better impedance matching and reflection coefficient | S in the GSM 0.698-0.96GHz band (BW is 262MHz, 31.6%) and the LTE 1.71-2.60GHz band (BW is 890MHz, 41.3%)
11The absolute value is less than or equal to-8.0, and the minimum value is-19.6 dB; the relative bandwidth of the two frequency bands is 31.6 percent and 41.3 percent respectively, and the double-frequency ultra-wide bandwidth is realized.
FIG. 15 shows port isolation | S for a low profile dual frequency ultra-wideband cross-dipole element
21The | curve. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the longitudinal axis (Y-axis) being S
11Amplitude of (2)|S
11And | in dB. As shown in the figure, the isolation of the antenna in the whole frequency band is larger than-40 dB, the isolation of the antenna in the low frequency band is better than-53 dB, and the isolation of a port is very ideal.
FIG. 16 shows the low frequency f of a low profile dual frequency ultra wide band crossed dipole unit
1The 0.698GHz gain pattern. Where the smooth line represents the E-plane, the dotted line represents the H-plane, the solid line represents the main polarization, and the dashed line represents the cross polarization. As shown, the E, H plane beams are all wider and cross-polarized XPD in the main lobe>45dB, the polarization purity is very high.
FIG. 17 shows the low frequency f of a low profile dual frequency ultra wide band crossed oscillator unit
2The gain pattern is 0.96 GHz. Where the smooth line represents the E-plane, the dotted line represents the H-plane, the solid line represents the main polarization, and the dashed line represents the cross polarization. As shown, the E, H plane beams are all wider and cross-polarized XPD in the main lobe>47dB, the polarization purity is very high.
FIG. 18 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
31.71GHz gain pattern. Where the smooth line represents the E-plane, the dotted line represents the H-plane, the solid line represents the main polarization, and the dashed line represents the cross polarization. As shown, the H-plane beam is wide and cross-polarized XPD in the main lobe>30dB, the polarization purity is higher.
FIG. 19 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
42.17GHz gain pattern. Where the smooth line represents the E-plane, the dotted line represents the H-plane, the solid line represents the main polarization, and the dashed line represents the cross polarization. As shown, the H-plane beam is wide and cross-polarized XPD in the main lobe>35dB, the polarization purity is very high.
FIG. 20 shows the high frequency f of a low profile dual frequency ultra wide band cross-dipole unit
52.60GHz gain pattern. Where the smooth line represents the E-plane, the dotted line represents the H-plane, the solid line represents the main polarization, and the dashed line represents the cross polarization. As shown in the figure, the E/H plane beam shapes are almost the same, and the cross polarization XPD in the main lobe>20dB, the polarization purity is higher.
Fig. 21 shows the characteristic of the E/H-plane half-power beam width HBPW of the low-profile dual-frequency ultra-wideband cross-dipole unit as a function of frequency f. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the vertical axis (Y-axis) is the beam width in degrees (deg); the solid line represents the E-plane and the line represents the H-plane. It is known from the figure that, in the low-high frequency band, the E/H plane half power bandwidth HPBW is 56.57 to 60.65 ° (E)/73.2 to 88.2 ° (H) and 21.5 to 46.0 ° (E)/35.1 to 128.5 ° (H), and the bandwidth is wide and favorable for signal coverage.
Fig. 22 shows the maximum real gain versus frequency f characteristic of a low profile dual frequency ultra-wideband cross-dipole element. Wherein the horizontal axis (X-axis) is the frequency f in GHz; the vertical axis (Y-axis) is gain in dBi. It is known from the figure that, in the low frequency band and the high frequency band, the gain variation ranges are respectively G ═ 7.8-9.1 dBi, G ═ 6.1-8.6 dBi, and higher gains are kept in the double ultra wide band.
FIG. 23 shows the efficiency η of a low profile dual-band ultra-wideband cross-dipole element
AThe curve varies with frequency f, where the horizontal axis (X-axis) is frequency f in GHz and the vertical axis (Y-axis) is efficiency, which shows that the antenna efficiency is η in the low and high frequency bands, respectively
ANot less than 78% and η
A≥80％。
The above are merely preferred examples of the present invention and are not intended to limit or restrict the present invention. Various modifications and alterations of this invention will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A low-profile dual-frequency ultra-wideband antenna is characterized by comprising at least one dual-frequency ultra-wideband oscillator unit, wherein the dual-frequency ultra-wideband oscillator unit comprises two pairs of ultra-wideband oscillators which are printed on a medium substrate and have the same shape and are orthogonal, the two pairs of ultra-wideband oscillators are respectively positioned on the +/-45-degree axis of the medium substrate, and half-wave arrays forming each ultra-wideband oscillator are fat blocks; one half-wave array in a fat block shape extends along the direction of +45 degrees by taking the center as a starting point, the width is increased, then the width is reduced, and finally the tail end is furled to form the fat block shape, and the other half-wave array corresponding to the half-wave array extends reversely along the axis of +45 degrees;
the tail ends of the two arms of the ultra-wideband oscillator are provided with arc-shaped grooves along the edges of the two sides, the tops of the arc-shaped grooves are positioned on the axis of +/-45 degrees and protrude outwards, and the bottoms of the arc-shaped grooves extend to the middle lower part of the oscillator along the edges of the oscillator arms; symmetrically loading a pair of short piles at the position near the middle of the arc-shaped groove and connecting the inner wall and the outer wall of the arc-shaped groove;
arc-shaped branches are symmetrically loaded at the tail end of the ultra-wideband oscillator along the outer edges of two sides of the oscillator arm, and a feed point connected with a coaxial cable or balun is arranged at the center intersection;
the symmetrical arc-shaped branches are provided with arc sections at the initial positions for short-circuit connection, a longitudinal groove is formed in the middle of each arc-shaped branch, and a gap exists between the tail ends of the adjacent arc-shaped branches.
2. The low-profile dual-frequency ultra-wideband antenna of claim 1, wherein the arms of the ultra-wideband element are symmetrically disposed along a ± 45 ° axis, the slot is symmetric about the ± 45 ° axis, and the arc branches are also symmetric about the ± 45 ° axis.
3. The low-profile dual-band ultra-wideband antenna as claimed in claim 1, wherein the dielectric substrate has a dielectric constant ∈ r of 1 to 20, a thickness Td of 0 to 0.25 · λ L, and λ L is a lowest frequency wavelength.
4. The low-profile dual-band ultra-wideband antenna of claim 1, wherein a reflector plate is disposed on one side of the dielectric substrate.
5. The low-profile dual-frequency ultra-wideband antenna according to any of claims 1 to 3, further comprising a radome, wherein the dual-frequency ultra-wideband oscillator unit is arranged in the radome.
6. The low-profile dual-band ultra-wideband antenna of claim 5, wherein the radome corners are rounded or square.
7. The low-profile dual-frequency ultra-wideband antenna according to claim 1, 2 or 3, wherein the antenna comprises two or more than three dual-frequency ultra-wideband oscillator units which form a MIMO array and are arranged in a radome.
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| CN109103574B (en) * | 2018-07-12 | 2024-01-05 | 广东通宇通讯股份有限公司 | Dual-frequency dual-polarized oscillator antenna |
| CN110048211B (en) * | 2019-04-15 | 2024-03-19 | 深圳市信维通信股份有限公司 | Broadband multi-resonance 5G antenna system and base station |
| CN112751158B (en) * | 2019-10-31 | 2022-05-17 | 华为技术有限公司 | Antenna assembly and communication equipment |
| CN111180870B (en) * | 2020-01-06 | 2021-11-23 | 武汉虹信科技发展有限责任公司 | Antenna radiation unit, base station antenna and antenna index adjusting method |
| CN113571881B (en) * | 2020-04-29 | 2023-10-03 | 江苏嘉华通讯科技有限公司 | Small-size ultra-wideband MIMO antenna |
| CN113725596B (en) * | 2021-08-27 | 2023-11-21 | 华南理工大学 | Antenna and radiating element |
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Denomination of invention: Low profile dual band ultra wideband antenna Effective date of registration: 20231206 Granted publication date: 20200211 Pledgee: China Co. truction Bank Corp Zhongshan branch Pledgor: TONGYU COMMUNICATION Inc. Registration number: Y2023980069635 |