CN106449269B - A kind of presser sensor structure and the method for preparing the presser sensor structure - Google Patents
A kind of presser sensor structure and the method for preparing the presser sensor structure Download PDFInfo
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- CN106449269B CN106449269B CN201610889673.6A CN201610889673A CN106449269B CN 106449269 B CN106449269 B CN 106449269B CN 201610889673 A CN201610889673 A CN 201610889673A CN 106449269 B CN106449269 B CN 106449269B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/24—Switches operated by change of fluid pressure, by fluid pressure waves, or by change of fluid flow
- H01H35/34—Switches operated by change of fluid pressure, by fluid pressure waves, or by change of fluid flow actuated by diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
Abstract
The present invention relates to a kind of MEMS pressure switches, and in particular to a kind of presser sensor structure and the method for preparing the presser sensor structure；The presser sensor structure of the present invention, on silicon cover board wafer wall is referred to close to the setting of the both sides of glass paste sealing ring is inside and outside, glass paste sealing ring is set between inside and outside reference wall, potting is functional while simplifying device architecture, and metal electrode contact is reliable above and below, nominal threshold value is accurately adjustable, realize the band lead Vacuum Package of pressure switch, reliable operation；The invention discloses the preparation methods of the presser sensor structure simultaneously, and this process simplify presser sensor structure preparation process flows, reduce manufacturing cost.
Description
Technical field
The present invention relates to a kind of MEMS pressure switches, and in particular to a kind of presser sensor structure and prepares the presser sensor
The method of structure.
Background technology
Pressure switch is not necessarily to energy resource supply, is capable of providing simple, reliable switching signal, is widely used in aviation boat
It, in the fields such as military project, metallurgy, oil, electric power, chemical industry and water supply to the monitoring and controlling of air pressure, hydraulic pressure.It is small based on senser element
The maturation of type, light-weighted development trend and MEMS technology, MEMS pressure switches are come into being.
Currently, electrical contact and encapsulation are the mains direction of studying of MEMS pressure switches.Researcher is dedicated to research electricity
Presser sensor structure in contact problems and contact material, all kinds of novel contact electrode materials are just gradually suggested, but gold,
The noble metals such as platinum, silver are still main electrode material, can meet the performance requirement largely switched.The design of presser sensor structure
Respectively there are feature, such as " I " fonts, " E " the type silicon substrate structure that falls, to ensure the reliable steady contact of contact electrode for target.Pressure
The design of power sensitive structure will be carried out according to the operating pressure of switch in conjunction with concrete application environment and packaging technology.Encapsulate work
The rear end process that skill is prepared as MEMS device, by package temperature, the geometrical morphology of seal interface, device architecture and external electrical
The limitation of the electricity interconnection of pole etc..
The packaged types such as the common anode linkage of pressure switch, metal melting bonding at present, need to use through-hole interconnection technique,
It can not avoid the setting of deflector hole and insulating layer so that device architecture is complicated, and preparation process is cumbersome.Therefore, appropriate envelope is selected
Dress technology, studies the presser sensor structure and encapsulating structure of pressure switch, and the preparation method of reasonable design realizes device band lead
Vacuum Package is the key that push the further industrialized development of MEMS pressure switches.
Invention content
The present invention is intended to provide a kind of presser sensor structure and the side of the presser sensor structure is prepared, it is existing to solve
The problem that MEMS pressure switch constructions are complicated, preparation process is cumbersome.
Concrete scheme is as follows：A kind of presser sensor structure, including compatible silicon cover board wafer and substrate of glass wafer
Piece forms pressure-sensitive diaphragm on the silicon cover board wafer, and the side of the pressure-sensitive diaphragm is equipped with silicon island, the pressure-sensitive diaphragm it is another
Side is equipped with upper metal electrode, and substrate of glass wafer is fixed in the side fitting which is equipped with upper metal electrode
On；The substrate of glass wafer close to the side of silicon cover board wafer be equipped with lower metal electrode, solder joint and by the solder joint with
The attached lead of lower metal electrode electrical connection；The position that the silicon cover board wafer corresponds to the solder joint is provided with window；The silicon cover board
It is disposed with internal reference wall, External Reference wall around metal electrode on this on wafer, glass is equipped between the inside and outside reference wall
Slurry sealing ring；When silicon cover board wafer is attached on substrate of glass wafer, this is inside and outside with reference to wall and glass paste sealing ring
It is fitted closely with the substrate of glass, the lower metal electrode is located at internal reference side within the walls at this time, which is located at External Reference wall
Outside, this it is inside and outside with reference to wall correspond to attached lead by position be equipped with slot, and then make the attached lead from the inside and outside ginseng
It examines and is passed through at the slot of wall, and the attached lead is sealed ring cover and sealed by the glass paste.
Further, the pressure-sensitive diaphragm and silicon island are square structure.
Further, the glass paste sealing ring is square enclosed construction.The External Reference wall and internal reference wall are equal
It is square structure.
Further, it is 200 μm that the spacing of the internal reference wall and pressure-sensitive diaphragm outer rim, which is not less than,；The External Reference wall and silicon lid
The spacing of lath disk outer rim is not less than 300 μm.
Further, which is 100 μm, is highly 8 μm, the groove width of the interior External Reference wall institute slot
It is 600 μm；The height of the glass paste sealing ring is 6~10 μm, and width is 400~600 μm, and the glass paste sealing ring side
Face to the inside and outside distance with reference to wall is 100~200 μm.
Further, the upper metal electrode is square structure, length of side 1.4mm, and thickness is 1 μm, the upper metal
Projection of the central point of electrode on substrate of glass wafer is overlapped with the central symmetry of twice metal electrodes point.
Further, the lower metal electrode is two, which is the square that size is 1.2mm*1.8mm
Shape structure, twice metal electrode thickness are 1 μm；Twice metal electrodes are positioned opposite with long side, and recently between edge
Distance is 200~800 μm.
The invention also discloses the methods for preparing above-mentioned presser sensor structure, include the following steps：
Step 1：It is made on Silicon Wafer with through the inside and outside with reference to wall of slot；
Step 2：Window is opened up on Silicon Wafer after step 1 processing, which is that the welding of solder joint reserves space；
Step 3：Region printed glass slurry sealing ring between inside and outside reference wall on Silicon Wafer after step 2 processing；
Step 4：The upper metal electrode of region sputtering molding in internal reference portion within the walls on Silicon Wafer after step 3 processing；
Step 5：Metal electrode, solder joint and attached lead under sputtering is molded on substrate of glass wafer；
Step 6：The Silicon Wafer after the processing of substrate of glass wafer and step 4 after step 5 is processed in bonder with
The mode of the opposite fitting in face where upper and lower metal electrode is aligned, and temperature-pressure carries out glass paste sealing bonding to be formed
Bonding pad；
Step 7：Molding pressure-sensitive diaphragm and silicon island are made on the Silicon Wafer of the bonding pad made from step 6, and then make this
Silicon Wafer is shaped to silicon cover board wafer.
Inside and outside reference wall, window, pressure-sensitive diaphragm and silicon island on the further Silicon Wafer are added by wet etching
Work forms.
Compared with existing MEMS pressure switches, the advantageous effect of presser sensor structure of the invention is, in cover board silicon wafer
Silicon island is set on the pressure-sensitive diaphragm of disk, and center forms translation region, ensures the reliable contacts between metal electrode up and down；
Clearance height corresponding matching between the thickness of pressure-sensitive diaphragm and upper metal electrode and lower metal electrode, determines pressure switch
Specified threshold pressure；Wall is referred to close to the setting of the both sides of glass paste sealing ring is inside and outside on silicon cover board wafer, by this
Gap between the inside and outside highly regulated upper and lower metal electrode with reference to wall；Internal reference wall is effectively isolated glass paste and inside and outside
With reference to the movable member between wall, metal electrode is prevented to be contaminated；External Reference wall is on three sides that no attached lead passes through
On respectively open two slots, give extra glass paste certain extension space, ensure that it will not cover the External Reference wall because of extension, together
When reduce stress concentration；Inside and outside to be disconnected with reference to wall at lead packages, glass paste gathers here when bonding；Based on glass
The bonding performance and flow behavior of slurry brilliance can fill up the surface void of attached lead, form secured and strong encapsulation,
To ensure the packaging air tightness of lead outlet.The inside and outside encapsulating structure with reference to wall of trough of belt is mutually tied with glass paste bonding techniques
It closes, realizes the band lead Vacuum Package of pressure switch, reliable operation, while simplifying device architecture and preparation process flow, drop
Low cost.
Description of the drawings
Fig. 1 is the embodiment of the present invention one in one structural schematic diagram of silicon cover board wafer visual angle；
Fig. 2 is two structural schematic diagram of Fig. 1 silicon cover board wafers visual angle；
Fig. 3 is the embodiment of the present invention one in substrate of glass wafer structure schematic diagram；
Fig. 4 is one partial sectional view of the embodiment of the present invention；
Fig. 5 is straight for the region that in the case of Fig. 4 pressure-sensitive diaphragm difference length of sides, is translatable with the variation of the silicon island length of side, on pressure-sensitive diaphragm
Diameter size variation trend statistical chart；
Fig. 6 is that Fig. 4 changes with internal reference wall to pressure-sensitive diaphragm outer rim spacing, the change of maximum stress value on silicon cover board wafer
Change tendency chart；
Fig. 7 is the presser sensor structure preparation technology flow chart of the embodiment of the present invention two.
Specific implementation mode
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be coordinated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
In conjunction with the drawings and specific embodiments, the present invention is further described.
Embodiment one
As shown in figures 1-4, the presser sensor structure of the pressure switch of the embodiment is to be bonded to realize by glass paste
Band lead Vacuum Package MEMS pressure switches, including compatible silicon cover board wafer 101 and substrate of glass wafer 201,
The silicon cover board wafer 101 fitting is fixed on substrate of glass wafer 201；
Pressure-sensitive diaphragm 102 is formed on the silicon cover board wafer 101, the pressure-sensitive diaphragm 102 is close to substrate of glass wafer
The side of piece 201 is first side, and another side is second side, and the second side of the pressure-sensitive diaphragm 102 is equipped with silicon island
103, metal electrode 108 is formed in the first side of the pressure-sensitive diaphragm 102；Pressure-sensitive diaphragm 102 and silicon island 103 are to pass through light
What the micro fabrications such as quarter, deep silicon etching made, be square structure, and size is according to the specified threshold values pressure of pressure switch
Power optimizes.
On the silicon cover board wafer 101 close to the side of substrate of glass wafer 201 open up it is inside and outside refer to wall, including
External Reference wall 107 and internal reference wall 106, the External Reference wall 107 and internal reference wall 106 offer perforative slot, the outer ginseng
Examining wall 107 and internal reference wall 106 is made by micro fabrications such as photoetching, etchings, is square structure, by reference to
Gap between the upper and lower electrode of highly regulated metal of wall, specifically, the width and height with reference to wall are respectively 100 μm and 8 μ
M, groove width are 600 μm, and the distance between the internal reference wall 106 and 102 nearest edge of pressure-sensitive diaphragm pass through optimization design so that
Stress on internal reference wall 106 is minimum, and distance value is 200 μm, the External Reference wall 107 and 101 most near side (ns) of silicon cover board wafer
The distance between edge is 300 μm.
It is sealed on the silicon cover board wafer 101 with being equipped with glass paste between the External Reference wall 107 and internal reference wall 106
Ring 105, the glass paste sealing ring 105 is prepared by silk-screen printing technique, is accurately deposited on 107 He of External Reference wall
Between internal reference wall 106.Glass paste selects the 5643W slurries that Koartan companies provide, the glass paste sealing ring 105
It is square enclosed construction, specifically, the height of glass paste sealing ring 105 is 6~10 μm, width is 400~600 μm, and
The distance between the glass paste sealing ring 105 and 106 nearest edge of internal reference wall are 100~200 μm, and the glass paste is close
The distance between seal ring 105 and 107 nearest edge of External Reference wall are 100~200 μm.
Metal electrode 108 is the metal electrode 108 on this positioned at 106 interior zone of internal reference wall of silicon cover board wafer 101
It is square structure, length of side 1.4mm, thickness is 1 μm, when deflection deformation occurs under pressure for the pressure-sensitive diaphragm 102,
The upper metal electrode 108 is contacted with twice metal electrodes 204, circuit turn-on.The External Reference wall of the silicon cover board wafer 101
107 lateral area is further opened with window 104, and projection of the window 104 on substrate of glass wafer 201 is coated on solder joint
202, for the welding reserved space of the solder joint 202.
The substrate of glass wafer 201 is equipped with twice metal electrodes 204, which is separately connected
Have an attached lead 203 and a solder joint 202, and the lower metal electrode 204 be connected to by corresponding attached lead 203 it is corresponding
Solder joint 202, and then realized and be electrically connected by the solder joint 202 and external environment；Twice metal electrodes 204 are rectangle knot
Structure, size 1.2mm*1.8mm, thickness is 1 μm, and twice metal electrodes 204 are positioned opposite with long side, between nearest edge
Distance be 200~800 μm.
When silicon cover board wafer 101 and substrate of glass wafer 201 are bonded, the glass paste sealing ring 105, internal reference
It examines wall 106 and External Reference wall 107 and is fitted closely with the substrate of glass 201, and the internal reference wall 106 is in substrate of glass wafer
Projection on piece 201 positioned at the outside of lower metal electrode 204, the attached lead 203 of the lower metal electrode 204 from it is described it is interior,
Across by the securely covering of the glass paste sealing ring 105, solder joint 202 is to be located at outer ginseng at the fluting of External Reference wall 106,107
The outside of wall 107 is examined, projection of the window 104 on substrate of glass wafer 201 is coated on solder joint 202.
The representative value of height is 6~10 μm after the embodiment is pre-sintered according to glass paste, determines the inside and outside height with reference to wall
Degree is 8 μm, and the spacing between upper and lower metal electrode is 6 μm.According to wet corrosion technique experience, to ensure pressure sensitive film in technique
It is not destroyed as possible in flow, it is 50 μm to take 102 thickness of pressure-sensitive diaphragm.On this basis, optimization pressure-sensitive diaphragm 102 the length of side,
The length of side and height of silicon island 103 regulate and control the compressive deformation situation of pressure-sensitive diaphragm 102, ensure that pressure-sensitive diaphragm 102 reaches 6 μm of change
Shape amount makes metal electrode reliable contacts up and down, and maximum equivalent is no more than the allowable stress of silicon on silicon cover board wafer.
In conjunction with Fig. 5,102 length of side of pressure-sensitive diaphragm, 103 length of side of silicon island and 103 three parameters of height of silicon island are first investigated respectively
The line of deflection of pressure-sensitive diaphragm 102 when variation.According to simulation result, target deflection deflection and translation region are obtained, it is necessary to
Increase 102 length of side of pressure-sensitive diaphragm, or reduces 103 length of side of silicon island and height.When 103 height of silicon island is 120 μm, pressure-sensitive diaphragm
102 whole translation better performances.Therefore, fixed 103 height of silicon island is 120 μm, research 102 deflection deformation amount of pressure-sensitive diaphragm with
The variation tendency of 103 length of side of the length of side and silicon island.4.0~5.0mm in Fig. 5 totally 6 series, respectively represents different pressure-sensitive diaphragms
102 length of sides, ordinate are 103 length of sides of silicon island, and step-length 0.2mm is worth for 6 totally from 1.0~2.0mm；Abscissa is pressure-sensitive diaphragm 102
Deflection reaches 6 μm of translation regional diameter size, is worth the deflection indicated for 0 on 102 arbitrary point of pressure-sensitive diaphragm under this condition
It is not up to 6 μm；.As can be seen that 102 length of side of pressure-sensitive diaphragm is 5.0mm, 103 length of side of silicon island changes between 1.0~1.8mm
When, it is satisfied by design requirement.In order to ensure that the translation region for having enough, 102 length of side optimal value of pressure-sensitive diaphragm are set to 5.0mm, silicon
103 length of side optimal value of island is set to 1.6mm.
In conjunction with Fig. 6, the representative value of width is 400~600 μm after which is pre-sintered according to glass paste, considers silk screen
The accuracy of print register and the controllability of printing technology determine that the inside and outside distance minimum with reference to wall 106,107 is 800 μm, are
The flowing reserved space of glass paste.According to early-stage study experience, it sets the inside and outside width with reference to wall 106,107 to 100 μ
M, External Reference wall 107 are set as 300 μm away from 101 outer rim minimum range of silicon cover board wafer.In order to determine internal reference wall 106 and sense
The distance between 102 nearest edge of pressuring film plate, simulation analysis simultaneously read the maximum stress value on silicon cover board wafer 101, occur
Midpoint on 102 4 side of pressure-sensitive diaphragm, as seen from Figure 6, when internal reference wall 106 and the nearest phase of 102 outer rim of pressure-sensitive diaphragm
When away from 200 μm, maximum stress value on pressure-sensitive diaphragm 102 is minimum, thus internal reference wall 106 to 102 outer rim of pressure-sensitive diaphragm away from
It is set to 200 μm from optimal value.
Embodiment two：
In conjunction with Fig. 7, this embodiment disclose a kind of methods preparing presser sensor structure described in embodiment one to be：
Step 1：It is made on Silicon Wafer with through the inside and outside with reference to wall of slot；The inside and outside reference wall is to pass through wet method
Made of lithography, and perforative slot is opened up on the inside and outside reference wall；Simultaneously in the relatively interior External Reference wall of silicon wafer
The other side, which is corroded, silicon island region.Glass paste sealing ring can fail at a high temperature of thermal oxide, so by the light of silicon island
Carving technology can ensure the air-tightness of switch sealing-in to avoid thermal oxide is carried out after pressure switch is bonded in advance.
Step 2：Window is opened up on Silicon Wafer after step 1 processing, which is that the welding of solder joint reserves space；
Window is processed by wet etching, retains 40~50 μm of thickness, is waited for removal manually after the completion of whole techniques, can be protected attached
Lead solder-joint is not contaminated in etching process.
Step 3：Region printed glass slurry sealing ring between inside and outside reference wall on Silicon Wafer after step 2 processing；So
Three-stage row's bubble technique is used to be pre-sintered afterwards.
Step 4：The upper metal electrode of region sputtering molding in internal reference portion within the walls on Silicon Wafer after step 3 processing.
Step 5：Metal electrode, solder joint and attached lead under sputtering is molded on substrate of glass wafer；The lower metal
Electrode, solder joint and attached lead it is each there are two, twice metal electrodes are electrically connected to correspondence by corresponding attached lead respectively
Solder joint.
Step 6：The Silicon Wafer after the processing of substrate of glass wafer and step 4 after step 5 is processed in bonder with
The mode of the opposite fitting in face where upper and lower metal electrode is aligned, and temperature-pressure carries out glass paste sealing bonding to be formed
Bonding pad；Make the attached leads of twice metal electrodes from the inside and outside fluting with reference to wall across in 450 DEG C of bonding temperature
Glass paste is melted under the bonding pressure of about 10atm and moistens the surface of bonding region, it is made firmly to cover the table of attached lead
Face gap, it is then gradually cooling to realize air-tight packaging.
Step 7：Molding pressure-sensitive diaphragm and silicon island are made on the Silicon Wafer of the bonding pad made from step 6, and then make this
Silicon Wafer is shaped to silicon cover board wafer；Pressure-sensitive diaphragm and silicon island are process by wet etching, specifically, first etching
Silicon island, then pressure-sensitive diaphragm is etched, then the remaining thin layer of window in step 2 is removed, exposes attached lead pad.
In conjunction with Fig. 7, sequencing relationship is not present in any one step of step 5 and step 1 to step 4, as long as step 5
It completes that the embodiment technique effect can be realized before step 6.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
In vain, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (9)
1. a kind of presser sensor structure, including compatible silicon cover board wafer and substrate of glass wafer, the silicon cover board is brilliant
Pressure-sensitive diaphragm is formed on disk, the side of the pressure-sensitive diaphragm is equipped with silicon island, and the other side of the pressure-sensitive diaphragm is equipped with upper metal electricity
Pole, the side fitting which is equipped with upper metal electrode are fixed on substrate of glass wafer；The substrate of glass
Wafer is equipped with lower metal electrode, solder joint close to the side of silicon cover board wafer and is electrically connected the solder joint with lower metal electrode
Attached lead；The position that the silicon cover board wafer corresponds to the solder joint is provided with window；It is characterized in that：The silicon cover board wafer
Upper to be disposed with internal reference wall, External Reference wall around metal electrode on this, this is inside and outside close with reference to glass paste is equipped between wall
Seal ring；Silicon cover board wafer is attached on substrate of glass wafer, this it is inside and outside with reference to wall and glass paste sealing ring with the glass
Glass substrate wafer piece fits closely, and the lower metal electrode is located at internal reference side within the walls at this time, which is located at outside External Reference wall
Side, the inside and outside position that attached lead is corresponded to reference to wall are equipped with slot, and then keep the attached lead inside and outside with reference to wall from this
It is passed through at slot, and the attached lead is sealed ring cover and sealed by the glass paste.
2. presser sensor structure according to claim 1, it is characterised in that：The pressure-sensitive diaphragm and silicon island are square
Structure.
3. presser sensor structure according to claim 1, it is characterised in that：The glass paste sealing ring is square envelope
Structure is closed, the External Reference wall and internal reference wall are square structure.
4. presser sensor structure according to claim 1, it is characterised in that：Between the internal reference wall and pressure-sensitive diaphragm outer rim
Away from not less than being 200 μm；The External Reference wall and the spacing of silicon cover board wafer outer rim are not less than 300 μm.
5. presser sensor structure according to claim 1, it is characterised in that：The inside and outside width with reference to wall is 100 μm,
Height is 8 μm, which is 600 μm；The height of the glass paste sealing ring is 6~10 μm, wide
Degree is 400~600 μm, and the glass paste sealing ring two sides to the inside and outside distance with reference to wall is 100~200 μm.
6. presser sensor structure according to claim 1, it is characterised in that：The upper metal electrode is square structure,
The length of side is 1.4mm, and thickness is 1 μm, and the projection and twice of the central point of the upper metal electrode on substrate of glass wafer are golden
The central symmetry point for belonging to electrode overlaps.
7. presser sensor structure according to claim 1, it is characterised in that：The lower metal electrode is two, this is under two
Metal electrode is the rectangular configuration that size is 1.2mm*1.8mm, which is 1 μm；Twice metal electricity
Pole is positioned opposite with long side, and the distance between edge is 200~800 μm recently.
8. the method for preparing the presser sensor structure described in claim 1-7, it is characterized in that, include the following steps：
Step 1：It is made on Silicon Wafer with through the inside and outside with reference to wall of slot；
Step 2：Window is opened up on Silicon Wafer after step 1 processing, which is that the welding of solder joint reserves space；
Step 3：Region printed glass slurry sealing ring between inside and outside reference wall on Silicon Wafer after step 2 processing；
Step 4：The upper metal electrode of region sputtering molding in internal reference portion within the walls on Silicon Wafer after step 3 processing；
Step 5：Metal electrode, solder joint and attached lead under sputtering is molded on substrate of glass wafer；
Step 6：Silicon Wafer after substrate of glass wafer after step 5 processing is processed with step 4 is in bonder with upper and lower
The mode of the opposite fitting in face where metal electrode is aligned, and temperature-pressure carries out glass paste sealing bonding to form bonding
Piece；
Step 7：Molding pressure-sensitive diaphragm and silicon island are made on the Silicon Wafer of the bonding pad made from step 6, and then make the silicon wafer
Circle is shaped to silicon cover board wafer.
9. according to the method described in claim 8, it is characterized in that：It is inside and outside with reference to wall, window, pressure sensitive film on the Silicon Wafer
Piece and silicon island are process by wet etching.
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| WO2003019201A1 (en) * | 2001-08-24 | 2003-03-06 | Honeywell International Inc. | Hermetically sealed silicon micro-machined electromechanical system (mems) device having diffused conductors |
| DE102004011035B4 (en) * | 2004-03-06 | 2006-05-04 | X-Fab Semiconductor Foundries Ag | Method for testing the tightness of disc bonds and arrangement for carrying out the method |
| US20050253283A1 (en) * | 2004-05-13 | 2005-11-17 | Dcamp Jon B | Getter deposition for vacuum packaging |
| WO2006127777A1 (en) * | 2005-05-25 | 2006-11-30 | Northrop Grumman Corporation | Silicon accelerometer chip design for size and thermal distortion reduction and process simplification |
| CN202853817U (en) * | 2012-10-22 | 2013-04-03 | 清华大学 | MEMS tunnel magnetic resistance height pressure transducer |
| ITTO20130350A1 (en) * | 2013-04-30 | 2014-10-31 | St Microelectronics Srl | SLICE ASSEMBLY OF A MEMS SENSOR DEVICE AND RELATIVE MEMS SENSOR DEVICE |
| CN104596685B (en) * | 2014-12-04 | 2017-05-10 | 刘玉珏 | MEMS process based miniature packaged F-P pressure sensor and forming method |
| CN104897333B (en) * | 2015-06-29 | 2017-07-04 | 歌尔股份有限公司 | A kind of MEMS pressure sensors and its manufacture method |
| CN206076159U (en) * | 2016-10-12 | 2017-04-05 | 厦门大学 | A kind of presser sensor structure |
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