CN106297947A - Nickel slurry for crystal silicon solar battery front resistance diffusion layer electrode and preparation method thereof - Google Patents
Nickel slurry for crystal silicon solar battery front resistance diffusion layer electrode and preparation method thereof Download PDFInfo
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- CN106297947A CN106297947A CN201610649494.5A CN201610649494A CN106297947A CN 106297947 A CN106297947 A CN 106297947A CN 201610649494 A CN201610649494 A CN 201610649494A CN 106297947 A CN106297947 A CN 106297947A
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 239000002002 slurry Substances 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 39
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims description 20
- 239000000203 mixture Substances 0.000 claims abstract description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 21
- 239000010953 base metal Substances 0.000 claims abstract description 19
- 239000000428 dust Substances 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 11
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000227 grinding Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 claims description 26
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 14
- 239000001856 Ethyl cellulose Substances 0.000 claims description 14
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 14
- 239000004952 Polyamide Substances 0.000 claims description 14
- 239000002202 Polyethylene glycol Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229920001249 ethyl cellulose Polymers 0.000 claims description 14
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 14
- 239000000787 lecithin Substances 0.000 claims description 14
- 235000010445 lecithin Nutrition 0.000 claims description 14
- 229940067606 lecithin Drugs 0.000 claims description 14
- 229920001223 polyethylene glycol Polymers 0.000 claims description 14
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 229920002647 polyamide Polymers 0.000 claims description 13
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 12
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910003069 TeO2 Inorganic materials 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 238000003801 milling Methods 0.000 claims description 7
- 238000010791 quenching Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 230000000171 quenching effect Effects 0.000 claims description 6
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003064 anti-oxidating effect Effects 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 7
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 32
- 239000010410 layer Substances 0.000 description 31
- 229910052709 silver Inorganic materials 0.000 description 30
- 239000004332 silver Substances 0.000 description 30
- 210000004027 cell Anatomy 0.000 description 18
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 239000012071 phase Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920002472 Starch Polymers 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 235000019698 starch Nutrition 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 239000008107 starch Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004513 sizing Methods 0.000 description 3
- 235000005979 Citrus limon Nutrition 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- HMPVUDRACAQMSH-UHFFFAOYSA-N [Al].[Mo].[Mo].[Mo] Chemical compound [Al].[Mo].[Mo].[Mo] HMPVUDRACAQMSH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000010982 kinetic investigation Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of nickel slurry for crystal silicon solar battery front resistance diffusion layer electrode, the glass dust of nano-nickel powder, 1~5wt% by 85~95wt% and the organic carrier of 4~14wt% form.Organic carrier is placed in heated and stirred in thermostatic container, in container, adds nano-nickel powder and glass dust successively, then prepared mixture is placed in three-roll grinder grinding, afterwards by silk screen filter, obtain described nickel slurry.Nickel slurry is preset at crystal silicon solar battery front post-drying and prepares resistance diffusion layer nickel electrode, as the resistance diffusion layer electrode of crystal silicon solar battery front nickel copper/aluminum stannum base metal combination electrode, stops copper atom to spread in silicon.
Description
Technical field
The present invention relates to a kind of nickel slurry for crystal silicon solar battery electrode and preparation method thereof.
Background technology
Reducing cost is that solar cell future can be by one of essential condition of broader applications, the reduction master of battery cost
The raising of battery efficiency to be depended on and the reduction of battery manufacture material cost.On the one hand, the raising of photoelectric transformation efficiency increases
The generated output of unit are photovoltaic cell component, reduces the cost relevant to generating area accordingly.On the other hand, use
The reduction of material cost is prepared, it is also possible to effectively reduce the cost of solar cell in battery.After the eighties in 20th century, battery
The lifting of efficiency is mainly due to optimization (Green, the The path to 25% of the technology of preparing such as gate line electrode, silicon emitter
silicon solar cell efficiency:History of silicon cell evolution,
Prog.Photovolt:Res.Appl.,17(2009)183-189).The lifting master of conventional uniform emitter stage crystal silicon battery efficiency
The improvement of size performance to be depended on.Solar cell front surface gate line electrode the most all uses high temperature sintering after printing silver slurry
Method prepare, but the higher price of silver constrains the reduction of solar cell cost.Therefore, low cost, function admirable are sought
Novel conductive paste, substitute noble metal with base metal and prepare electrocondution slurry and become the inexorable trend of development.From British Electric
Research association has used aluminium dioxide as (Fedrizzi, Effect of powder since the conducting function phase of electrocondution slurry
painting procedures on the filiform corrosion of aluminium profiles,Progress
in organic coatings,59(2007)230-238;Maiti,Synthesis and characterization of
molybdenum aluminide nanoparticles reinforced aluminium matrix composites,
J.Alloy.Compd., 458 (2008) 450-456), various countries scientific research personnel has progressively carried out grinding about base metal electrocondution slurry
Study carefully application work.In terms of electrocondution slurry, starch (Wu, Preparation of micron-sized flake for copper
copper powder for base-metal-electrode multi-layer ceramic capacitor,journal
of materials processing technology,209(2009)1129-1133;Wu,Preparation of fine
copper powders and their application in bme-mlcc,Journal of University
ofScience and Technology Beijing,Mineral,Metallurgy,Material,13(2006)250-
255), nickel slurry (Lee, Characteristics of surface-modified metal hydride electrode
with flake ni by the ball-milling process,J.Alloy.Compd.,330–332(2002)835-
840;Yoshinaga,Highly densed-mh electrode using flaky nickel powder and gas-
atomized hydrogen storage alloy powder,J.Alloy.Compd.,330–332(2002)846-850)、
Corronil slurry (Songping, Preparation of ultra fine copper nickel bimetallic
Powders for conductive thick film, Intermetallics, 15 (2007) 1316-1321), ormolu
Slurry (Kalendova, Comparison of the efficiency of inorganic nonmetal pigments
with zinc powder in anticorrosion paints,Progress in organic coatings,57
(2006)1-10;Renger,Rheology studies on highly filled nano-zirconia
Suspensions, Journal of the European Ceramic Society, 27 (2007) 2361-2367) all carry out
Study widely, and copper slurry be successfully applied to the electrode of hydrid integrated circuit and multi-chip module prepare (Wang,
Research of ltcc/cu,ag multilayer substrate in microelectronic packaging,
Materials Science and Engineering:B,94(2002)48-53)。
In recent years, the demand for the silver slurry succedaneum in solar cell field grows with each passing day, the main screening of alternative metals
Standard is exactly resistivity and price.The resistivity of silver is 1.59 × 10-8Ω m, and the resistivity of copper is the most slightly higher, is 1.75
×10-8Ω·m.Further, the price of copper is far below silver, and the data of Shanghai on the 1st July in 2016 futures exchange show, the valency of copper
Lattice are about 45 yuan/kg, and the price of silver is about 4309 yuan/kg (Http: //www.Shfe.Com.Cn/), the price of copper only phase
When one of nearly percentage in silver, therefore use copper as the conducting function phase of electrocondution slurry, preparation electricity can be reduced greatly
The material cost in pond.Copper, in resistivity and the advantage of two aspects of cost, becomes and substitutes the optimum selection of silver in electrocondution slurry, adopt
Substitute argentum powder with copper powder to starch as the copper of conducting function phase and become study hotspot in recent years.
The gate line electrode of conventional solar cell is sinter molding after silk screen printing silver is starched, and this process generally uses
Schubert Sintering Model (Schubert, Thick film metallisation of crystalline silicon
solar cells:Mechanisms,models and applications,PhD(2006);Schubert,Current
transport mechanism in printed ag thick film contacts to an n-type-emiter of
a crystalline solar cell 19th European Solar Energy Conference and
Exhibition, (2004) 813 816) describe: in sintering process, organic carrier be heated after gradually volatiling reaction.Work as temperature
When reaching glass transition temperature, the glass dust in silver slurry starts to soften.Soften state glass-coated argentum powder, penetrate into silver slurry simultaneously
And infiltrate on the interface between silicon emitter and etch SiNx: H thin film.Soften state glass etching SiNx: after H thin film, glass dust
In lead oxide and silicon generation redox reaction, the interface zone at silicon emitter with printing slurry generates metallic lead, with slurry
Silver contact in material, reduces silver point, generates the pb-ag alloy of liquid phase, and silver has certain diffusion in silicon.Due to liquid phase
Pb-ag alloy is different to the etch rate in each crystal orientation of silicon emitter so that etched surface is inverted pyramid structure.When temperature reduces
Time, pb-ag alloy is according to phasor split-phase, and silver recrystallization is on (111) face of inverted pyramid.And when using copper slurry to substitute silver slurry, meeting
Two technical barriers occur, in sintering process, the oxidation of copper and the height of launch site caused due to the diffusion of copper are combined.One side
Face, copper is oxidizable relative to galactic pole, and the oxide layer of Surface Creation can not stop the continuation of internal oxidation occur (Hu,
Kinetic investigation of copper film oxidation by spectroscopic ellipsometry
and reflectometry,Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and
Films, 18 (2000) 2527-2532), the copper oxide resistivity of generation is relatively big, significantly increases the line resistance of gate line electrode,
And then have impact on the raising of solar cell performance.And if entirely without the existence of oxygen, back surface and main schedule in sintering atmosphere
Resinous principle in starch adhesive material all can not become volatile oxide, it is difficult to removes from battery surface.On the other hand, due to copper
Having bigger diffusion coefficient in silicon materials, copper diffusion coefficient in silicon is about 7.3 × 10-8cm2/ s, much larger than the diffusion of silver
Coefficient 1.5 × 10-15cm2/s(Fisher,Diffusion in silicon,(1998)).Copper atom diffuses through deeply in silicon,
Can reduce the life-span of carrier, improve compound saturation current density J caused02And reduce open-circuit voltage, even and if at low temperature
It is also possible to penetrate emitter region under environment and causes electric leakage, especially hinder its popularization in shallow junction solar cell field.
In recent years, having carried out substantial amounts of work both at home and abroad in terms of the research of copper slurry, core is all intended to solve sintering process
In, the technical barrier of the oxidizable and easy diffusion of copper.In order to stop copper atom diffusion in silicon in sintering process, mainly use expansion
Dissipate barrier technology.The research that northeastern Japan university is correlated with, by preparing the oxidation of 5~10nm on battery emitter stage
Layer as diffusion impervious layer with stop copper diffusion.But, use preparation oxide layer as the method for diffusion impervious layer, add
Technology step, and the oxidation technology temperature of crystal silicon solar battery reaches more than 900 DEG C, relatively big to the hot injury of silicon chip, fall
Low solar cell electrical property.
Summary of the invention
It is an object of the invention to overcome prior art to be difficult to solve the technical barrier that copper easily spreads, propose one for crystalline substance
Nickel slurry of silicon solar cell front resistance diffusion layer electrode and preparation method thereof.The present invention uses the nickel slurry preparation nickel copper/low-priced gold of aluminum stannum
Belong to the resistance diffusion layer electrode of combination electrode, both can solve the technical barrier that copper easily spreads, it is also possible to cost of sizing agent is greatly reduced.
For achieving the above object, the present invention use nikel powder base metal granule as conducting function phase, in conjunction with Binder Phase with have
The performances such as airborne body regulation and control slurry bonding, thixotropy, rheological characteristic, are preset at crystal silicon solar battery front post-drying, prepare resistance and expand
Dissipate layer nickel electrode, as the resistance diffusion layer electrode of crystal silicon solar battery front nickel copper/aluminum stannum base metal combination electrode, stop copper
Atom spreads in silicon.
The present invention for crystal silicon solar battery front resistance diffusion layer electrode nickel slurry by 85~95wt% nano-nickel powder, 1
~the glass dust of 5wt% and 4~14wt% organic carrier composition.
The particle diameter of described nano-nickel powder is 500~800nm, and purity is more than 99%.
Described nickel slurry is preset at crystal silicon solar battery front, prepares resistance diffusion layer nickel electrode, as crystal silicon too after drying
The resistance diffusion layer electrode of sun battery front side nickel copper/aluminum stannum base metal combination electrode, stops copper atom to spread in silicon.
The preparation method of described nickel slurry is as follows:
(1) organic carrier is placed in container, described container is placed in the thermostatic water bath that temperature is 60~80 DEG C, with 90
~the organic carrier that the speed of 180 revs/min is stirred continuously in container, heated and stirred 1~after 10 hours, with 5~30g/min
Speed adds nano-nickel powder, prepares mixture a.
(2) thermostatic water bath temperature is brought up to 80~100 DEG C, be stirred continuously container with the speed of 120~200 revs/min
The mixture a that middle step (1) prepares, heated and stirred 1~after 5 hours, the speed with 1~5g/min adds glass dust, prepares mixed
Compound b.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 6~8 hours, prepares
Mixture c.
(4) the mixture c prepared by the silk screen filter step (3) of 300~400 mesh, for crystal silicon solar battery just prepares
The nickel slurry of face resistance diffusion layer electrode.
In described step (1) and step (2), the percentage by weight of the nano-nickel powder, glass dust and the organic carrier that are added
It is respectively 85~95wt%, 1~5wt% and 4~14wt%.
The particle diameter of described nano-nickel powder is 500~800nm, and purity is more than 99%.Glass dust by the PbO of 45wt%,
The TeO of 25wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, the Bi of 3wt%2O3Composition, by PbO, TeO2、
SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed in 1400 DEG C of Muffle furnaces heating, quench also after insulation 60min
Ball milling prepares.Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
Beneficial effects of the present invention is embodied in:
(1) nickel slurry is used to replace silver to starch, the resistance diffusion layer electrode of preparation nickel copper/aluminum stannum base metal combination electrode, the most real
Existing low cost, satisfactory electrical conductivity and low diffusibility.
(2) use nanometer resistance diffusion layer technology, use the bottom electrode of printing nano nickel slurry preparation as stoping copper atom
To the barrier layer of silicon emitter diffusion, nickel diffusion coefficient in silicon is about 2.4 × 10-15cm2/ s, much smaller than the diffusion system of copper
Number, it is possible to be prevented effectively from the diffusion problem of copper.
(3) resistivity of nickel is 6.84 × 10-6Ω cm, and nickel dam is relatively thin, and thickness is less than 1 μm, and combination electrode is main
Composition or copper.The resistivity of silver is 1.59 × 10-8Ω m, and the resistivity of copper is the most slightly higher, is 1.75 × 10-8Ω·
m.Therefore combination electrode resistivity is suitable with silver electrode.Further, the price of nickel is about 100 yuan/kg, far below 4309 yuan/kg of silver
Price, it is ensured that the cheap advantage of combination electrode.
With regard to application prospect aspect, the data of IEA and CPIA show, end the accumulative installation amount in the whole world in 2015 more than 200GW,
Just install 53GW in only 2015 whole world, domestic installation 15GW.Global solar module yield in 2015 is about 60GW, domestic about
For 43GW.In the solar cell technology of preparing of various industrialization, crystal silicon solar battery technology accounts for more than 90% share, and silver-colored
Slurry is the prime cost expenditure of crystal silicon solar battery, and market potential is huge.Single according to the most conventional crystal silicon battery efficiency and silver slurry
Consumption budgetary estimate, within 2015, whole world silver slurry consumption is about 1626 tons, domestic about 1165 tons.Even if it is it is to say, sudden and violent at whole world silver valency
2015 fallen, whole world silver slurry also consumed nearly 9,800,000,000 yuan, domestic consumption nearly 7,000,000,000 yuan.And along with photovoltaic market is recovered, brilliant
Silion cell yield cumulative year after year, staple commodities price stabilizes, and the following silver that will consume hundreds of hundred million for 1 year is starched.And if adopted
Use base metal slurry, it will greatly reduce electrocondution slurry cost.Do a simple measuring and calculating, it is assumed that base metal combination electrode with
Silver electrode has same shape, and nickel, copper, the volume ratio of aluminum stannum single-layer electrodes are 2:40:1, simultaneously except gold in base metal slurry
Metal particles other component prices outer are identical with silver slurry, then after silver slurry is by base metal slurry replacing whole of the present invention, and whole world crystal silicon
Solar cell slurry one be only about consumption 100,000,000 yuan, domestic about consumption 0.7 hundred million yuan, one of percentage before just corresponding to, greatly
Reduce production cost.If silver slurry is all replaced by base metal slurry of the present invention, the whole world announced according to CPIA and state's inner assembly
Global and the domestic cost-effective volume of base metal slurry of yield estimation, in 2016 years, whole world cost of sizing agent can cut down 10,500,000,000
Unit, domestic cost of sizing agent cuts down 8,000,000,000 yuan.Although the present invention program adds secondary printing operation, add certain equipment and throw
Entering, but produce daily as a example by the product line of 30000 by wall scroll, the slurry consumption of 1 year just can save 7,800,000 yuan, completely covers and sets
Standby input, the printing equipment still more increased can use for many years.
Accompanying drawing explanation
Fig. 1 nickel slurry component schematic diagram.
Fig. 2 crystal silicon solar battery front nickel copper/aluminum stannum base metal combined electrode structure schematic diagram.
Detailed description of the invention
As it is shown in figure 1, the present invention starches by 85~95wt% for the nickel of crystal silicon solar battery front resistance diffusion layer electrode
The glass dust of nano-nickel powder, 1~5wt% and the organic carrier composition of 4~14wt%.
The present invention uses nikel powder base metal granule as conducting function phase, regulates and controls slurry in conjunction with Binder Phase and organic carrier and glues
The performances such as knot, thixotropy, rheological characteristic, are preset at crystal silicon solar battery front post-drying, prepare resistance diffusion layer nickel electrode, as crystalline substance
The resistance diffusion layer electrode of silicon solar cell front nickel copper/aluminum stannum base metal combination electrode, stops copper atom to spread in silicon.Institute
The bottom of the crystal silicon solar battery front nickel copper/aluminum stannum base metal combination electrode stated is resistance diffusion layer nickel electrode, and middle level is conduction
Layer copper electrode, top layer is anti oxidation layer aluminum tin electrode, as shown in Figure 2.
Embodiment 1
(1) organic carrier of 14wt% is placed in container, described container is placed in the thermostatic water bath that temperature is 60 DEG C,
The organic carrier being stirred continuously in container with the speed of 180 revs/min, heated and stirred, after 10 hours, adds with the speed of 5g/min
Enter the nano-nickel powder of 85wt%, prepare mixture a.Wherein, the particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%;
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, 6wt%
Polyamide wax, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt% Polyethylene Glycol composition, by butyl,
After tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
It is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepare.
(2) thermostatic water bath temperature is brought up to 80 DEG C, the step (1) being stirred continuously in container with the speed of 200 revs/min
The mixture a prepared, heated and stirred, after 5 hours, adds the glass dust of 1wt%, prepares mixture b with the speed of 1g/min.Glass
Glass powder is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, 3wt%
Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion to be placed in 1400 DEG C of Muffle furnaces and add
Heat, after insulation 60min, quenching ball milling prepare.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 8 hours, prepares mixed
Compound c.
(4) the mixture c prepared by the silk screen filter step (3) of 300 mesh, prepares the resistance for crystal silicon solar battery front and expands
Dissipate the nickel slurry of layer electrode.
Embodiment 2
(1) organic carrier of 10wt% is placed in container, described container is placed in the thermostatic water bath that temperature is 70 DEG C,
The organic carrier being stirred continuously in container with the speed of 140 revs/min, heated and stirred, after 5 hours, adds with the speed of 20g/min
Enter the nano-nickel powder of 85wt%, prepare mixture a.Wherein, the particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%;
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, 6wt%
Polyamide wax, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt% Polyethylene Glycol composition, by butyl,
After tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
It is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepare.
(2) thermostatic water bath temperature is brought up to 90 DEG C, the step (1) being stirred continuously in container with the speed of 160 revs/min
The mixture a prepared, heated and stirred, after 3 hours, adds the glass dust of 5wt%, prepares mixture b with the speed of 3g/min.Glass
Glass powder is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, 3wt%
Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion to be placed in 1400 DEG C of Muffle furnaces and add
Heat, after insulation 60min, quenching ball milling prepare.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 7 hours, prepares mixed
Compound c.
(4) the mixture c prepared by the silk screen filter step (3) of 400 mesh, prepares the resistance for crystal silicon solar battery front and expands
Dissipate the nickel slurry of layer electrode.
Embodiment 3
(1) organic carrier of 10wt% is placed in container, described container is placed in the thermostatic water bath that temperature is 80 DEG C,
The organic carrier being stirred continuously in container with the speed of 90 revs/min, heated and stirred, after 1 hour, adds with the speed of 30g/min
The nano-nickel powder of 89wt%, prepares mixture a.Wherein, the particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%;Have
Airborne body by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, 6wt% poly-
Amide waxe, the lecithin of 6wt%, the tributyl phosphate of 5wt%, the Polyethylene Glycol composition of 4wt%, by butyl, lemon
Lemon acid tributyl, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion rearmounted
In 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(2) thermostatic water bath temperature is brought up to 100 DEG C, the step being stirred continuously in container with the speed of 120 revs/min
(1) the mixture a prepared, heated and stirred, after 1 hour, adds the glass dust of 1wt%, prepares mixture b with the speed of 5g/min.
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, 3wt%
Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion to be placed in 1400 DEG C of Muffle furnaces and add
Heat, after insulation 60min, quenching ball milling prepare.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 6 hours, prepares mixed
Compound c.
(4) the mixture c prepared by the silk screen filter step (3) of 350 mesh, prepares the resistance for crystal silicon solar battery front and expands
Dissipate the nickel slurry of layer electrode.
Embodiment 4
(1) organic carrier of 4wt% is placed in container, described container is placed in the thermostatic water bath that temperature is 65 DEG C,
The organic carrier being stirred continuously in container with the speed of 120 revs/min, heated and stirred, after 8 hours, adds with the speed of 15g/min
Enter the nano-nickel powder of 95wt%, prepare mixture a.Wherein, the particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%;
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, 6wt%
Polyamide wax, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt% Polyethylene Glycol composition, by butyl,
After tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
It is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepare.
(2) thermostatic water bath temperature is brought up to 85 DEG C, the step (1) being stirred continuously in container with the speed of 180 revs/min
The mixture a prepared, heated and stirred, after 3 hours, adds the glass dust of 1wt%, prepares mixture b with the speed of 4g/min.Glass
Glass powder is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, 3wt%
Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion to be placed in 1400 DEG C of Muffle furnaces and add
Heat, after insulation 60min, quenching ball milling prepare.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 6.5 hours, prepares
Mixture c.
(4) the mixture c prepared by the silk screen filter step (3) of 300 mesh, prepares the resistance for crystal silicon solar battery front and expands
Dissipate the nickel slurry of layer electrode.
Embodiment 5
(1) organic carrier of 8wt% is placed in container, described container is placed in the thermostatic water bath that temperature is 75 DEG C,
The organic carrier being stirred continuously in container with the speed of 160 revs/min, heated and stirred, after 3 hours, adds with the speed of 25g/min
Enter the nano-nickel powder of 90wt%, prepare mixture a.Wherein, the particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%;
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, 6wt%
Polyamide wax, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt% Polyethylene Glycol composition, by butyl,
After tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
It is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepare.
(2) thermostatic water bath temperature is brought up to 95 DEG C, the step (1) being stirred continuously in container with the speed of 160 revs/min
The mixture a prepared, heated and stirred, after 2 hours, adds the glass dust of 2wt%, prepares mixture b with the speed of 2g/min.Glass
Glass powder is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, 3wt%
Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion to be placed in 1400 DEG C of Muffle furnaces and add
Heat, after insulation 60min, quenching ball milling prepare.
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 7.5 hours, prepares
Mixture c.
(4) the mixture c prepared by the silk screen filter step (3) of 400 mesh, prepares the resistance for crystal silicon solar battery front and expands
Dissipate the nickel slurry of layer electrode.
Performance test example
Use 156 × 156mm2Polysilicon chip, the resistance battery corresponding to diffusion layer nickel electrode of embodiment 1~5 preparation
Performance, at AM 1.5G, 100mW/cm2, under conditions of 25 DEG C, use the test of I-V tester, result is as shown in table l.
Table 1, embodiment battery performance.
The present invention | Open-circuit voltage (V) | Short circuit current (A) | Fill factor, curve factor (%) | Electricity conversion (%) |
Embodiment 1 | 0.622 | 8.88 | 78.01 | 17.72 |
Embodiment 2 | 0.623 | 8.84 | 78.09 | 17.68 |
Embodiment 3 | 0.625 | 8.86 | 78.01 | 17.77 |
Embodiment 4 | 0.627 | 8.86 | 77.84 | 17.79 |
Embodiment 5 | 0.628 | 8.84 | 78.16 | 17.83 |
Claims (6)
1. the nickel slurry for crystal silicon solar battery front resistance diffusion layer electrode, it is characterised in that: described nickel slurry by 85~
The glass dust of the nano-nickel powder of 95wt%, 1~5wt% and the organic carrier composition of 4~14wt%;The grain of described nano-nickel powder
Footpath is 500~800nm, and purity is more than 99%;Described nickel slurry is preset at crystal silicon solar battery front, prepares resistance diffusion after drying
Layer nickel electrode, as the resistance diffusion layer electrode of crystal silicon solar battery front nickel copper/aluminum stannum base metal combination electrode, stops copper former
Son spreads in silicon;The bottom of described crystal silicon solar battery front nickel copper/aluminum stannum base metal combination electrode is resistance diffusion layer nickel
Electrode, middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminum tin electrode.
2. the method for crystal silicon solar battery front resistance diffusion layer electrode nickel slurry described in preparation claim 1, its feature exists
In: described preparation method step is as follows:
(1) organic carrier is placed in container, described container is placed in the thermostatic water bath that temperature is 60~80 DEG C, with 90~
The speed of 180 revs/min is stirred continuously the organic carrier in container, heated and stirred 1~after 10 hours, with the speed of 5~30g/min
Rate adds nano-nickel powder, prepares mixture a;
(2) thermostatic water bath temperature is brought up to 80~100 DEG C, be stirred continuously in container step with the speed of 120~200 revs/min
Suddenly the mixture a that (1) prepares, heated and stirred 1~after 5 hours, the speed with 1~5g/min adds glass dust, prepares mixture
b;
(3) the mixture b that step (2) prepares being placed in three-roll grinder grinding, milling time is 6~8 hours, prepares mixing
Thing c;
(4) the mixture c prepared by the silk screen filter step (3) of 300~400 mesh, prepares and hinders for crystal silicon solar battery front
The nickel slurry of diffusion layer electrode.
Preparation method the most according to claim 2, it is characterised in that: in described step (1) and step (2), added
The percentage by weight of nano-nickel powder, glass dust and organic carrier is respectively 85~95wt%, 1~5wt% and 4~14wt%.
Preparation method the most according to claim 2, it is characterised in that: the particle diameter of described nano-nickel powder be 500~
800nm, purity is more than 99%.
Preparation method the most according to claim 2, it is characterised in that: described glass dust is by PbO, 25wt% of 45wt%
TeO2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3, the Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、
A12O3、B2O3And Bi2O3Mix in proportion and be placed in 1400 DEG C of Muffle furnaces heating, quenching ball milling system after insulation 60min
?.
Preparation method the most according to claim 2, it is characterised in that: described organic carrier is by the diethylene glycol of 62wt%
Butyl ether, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%, the polyamide wax of 6wt%, the lecithin of 6wt%,
The tributyl phosphate of 5wt%, 4wt% Polyethylene Glycol composition, by butyl, tributyl citrate, ethyl cellulose,
Polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion and are placed in 80 DEG C of thermostatic containers, stir 5
Hour prepare.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109686474A (en) * | 2019-02-18 | 2019-04-26 | 邓建明 | A kind of can reduce starches electrode with the Ni of CdTe absorbed layer contact berrier |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080203914A1 (en) * | 2007-02-23 | 2008-08-28 | Lg Electronics Inc. | Plasma display panel and related technologies including method for manufacturing the same |
JP2009076271A (en) * | 2007-09-19 | 2009-04-09 | Tdk Corp | Conductive paste and electrode using it |
CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
CN102077301A (en) * | 2008-06-25 | 2011-05-25 | Sscp有限公司 | Conductive paste composition and method of preparing electrode using the same |
CN103726088A (en) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | Improved copper electroplating method of crystal silicon solar battery |
CN104952944A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar cell sheet and preparation method thereof and solar cell module with the cell sheet |
-
2016
- 2016-08-10 CN CN201610649494.5A patent/CN106297947A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080203914A1 (en) * | 2007-02-23 | 2008-08-28 | Lg Electronics Inc. | Plasma display panel and related technologies including method for manufacturing the same |
JP2009076271A (en) * | 2007-09-19 | 2009-04-09 | Tdk Corp | Conductive paste and electrode using it |
CN102077301A (en) * | 2008-06-25 | 2011-05-25 | Sscp有限公司 | Conductive paste composition and method of preparing electrode using the same |
CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
CN103726088A (en) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | Improved copper electroplating method of crystal silicon solar battery |
CN104952944A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar cell sheet and preparation method thereof and solar cell module with the cell sheet |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109686474A (en) * | 2019-02-18 | 2019-04-26 | 邓建明 | A kind of can reduce starches electrode with the Ni of CdTe absorbed layer contact berrier |
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