CN106098808B - A kind of crystal silicon solar battery base metal front electrode and preparation method thereof - Google Patents
A kind of crystal silicon solar battery base metal front electrode and preparation method thereof Download PDFInfo
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- CN106098808B CN106098808B CN201610649477.1A CN201610649477A CN106098808B CN 106098808 B CN106098808 B CN 106098808B CN 201610649477 A CN201610649477 A CN 201610649477A CN 106098808 B CN106098808 B CN 106098808B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 239000010953 base metal Substances 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims description 29
- 239000002002 slurry Substances 0.000 claims abstract description 142
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 126
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000010949 copper Substances 0.000 claims abstract description 104
- 229910052802 copper Inorganic materials 0.000 claims abstract description 104
- 239000011521 glass Substances 0.000 claims abstract description 97
- 239000000428 dust Substances 0.000 claims abstract description 67
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 59
- 229910052709 silver Inorganic materials 0.000 claims abstract description 59
- 239000004332 silver Substances 0.000 claims abstract description 59
- 239000000843 powder Substances 0.000 claims abstract description 57
- 238000001035 drying Methods 0.000 claims abstract description 52
- 239000004411 aluminium Substances 0.000 claims abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 36
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 33
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000002105 nanoparticle Substances 0.000 claims abstract description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 84
- 239000000203 mixture Substances 0.000 claims description 64
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 42
- QZCLKYGREBVARF-UHFFFAOYSA-N Acetyl tributyl citrate Chemical compound CCCCOC(=O)CC(C(=O)OCCCC)(OC(C)=O)CC(=O)OCCCC QZCLKYGREBVARF-UHFFFAOYSA-N 0.000 claims description 42
- 239000001856 Ethyl cellulose Substances 0.000 claims description 42
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 42
- 239000004952 Polyamide Substances 0.000 claims description 42
- 239000002202 Polyethylene glycol Substances 0.000 claims description 42
- 229910003069 TeO2 Inorganic materials 0.000 claims description 42
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 42
- 229910052681 coesite Inorganic materials 0.000 claims description 42
- 229910052906 cristobalite Inorganic materials 0.000 claims description 42
- 229920001249 ethyl cellulose Polymers 0.000 claims description 42
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 42
- 239000000787 lecithin Substances 0.000 claims description 42
- 235000010445 lecithin Nutrition 0.000 claims description 42
- 229940067606 lecithin Drugs 0.000 claims description 42
- 229920002647 polyamide Polymers 0.000 claims description 42
- 229920001223 polyethylene glycol Polymers 0.000 claims description 42
- 239000000377 silicon dioxide Substances 0.000 claims description 42
- 229910052682 stishovite Inorganic materials 0.000 claims description 42
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 42
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 42
- 229910052905 tridymite Inorganic materials 0.000 claims description 42
- 238000003756 stirring Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 28
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 24
- 238000005245 sintering Methods 0.000 claims description 23
- 238000000498 ball milling Methods 0.000 claims description 22
- 238000002156 mixing Methods 0.000 claims description 21
- 238000010791 quenching Methods 0.000 claims description 21
- 230000000171 quenching effect Effects 0.000 claims description 21
- 238000007639 printing Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000007641 inkjet printing Methods 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 6
- 229910052593 corundum Inorganic materials 0.000 claims 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 6
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 239000010410 layer Substances 0.000 description 108
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 37
- 238000005516 engineering process Methods 0.000 description 22
- 210000004027 cell Anatomy 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 14
- 238000011160 research Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000004513 sizing Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229960004643 cupric oxide Drugs 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- HMPVUDRACAQMSH-UHFFFAOYSA-N [Al].[Mo].[Mo].[Mo] Chemical compound [Al].[Mo].[Mo].[Mo] HMPVUDRACAQMSH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010982 kinetic investigation Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of crystal silicon solar battery base metal front electrode, the crystal silicon solar battery front electrode are base metal combination electrode, and bottom is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminium tin electrode.The method for preparing crystal silicon solar battery base metal front electrode substitutes silver powder as conducting function phase using nano-nickel powder, copper nanoparticle, nanometer aluminium powder, nanometer glass putty base metal particle, with reference to glass dust and organic carrier regulation and control slurry bonding, thixotropy, rheological characteristic performance, in crystal silicon solar battery front successively preset nickel slurry, copper slurry and aluminium tin slurry, resistance diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminium tin electrode are made after drying successively, nickel copper/aluminium tin base metal combination electrode is made after low-temperature sintering, substitutes noble silver electrode.
Description
Technical field
The present invention relates to a kind of crystal silicon solar battery electrode and preparation method thereof.
Background technology
It is that solar cell future can be by one of essential condition of broader applications, the reduction master of battery cost to reduce cost
To depend on the raising of battery efficiency and the reduction of battery manufacture material cost.On the one hand, the raising increase of photoelectric transformation efficiency
The generated output of unit area photovoltaic cell component, reduces the cost related to generating area accordingly.On the other hand, use
The reduction of material cost is prepared in battery, can also effectively reduce the cost of solar cell.After the 1980s, battery
Optimization (Green, The path to 25% of the lifting of efficiency mainly due to technologies of preparing such as gate line electrode, silicon emitters
silicon solar cell efficiency:History of silicon cell evolution,
Prog.Photovolt:Res.Appl.,17(2009)183-189).The lifting master of conventional uniform emitter stage crystal silicon battery efficiency
To depend on the improvement of size performance.The preceding surface gate line electrode of solar cell is for many years all using high temperature sintering after printing silver paste
Method prepare, but the higher price of silver constrains the reduction of solar cell cost.Therefore, low cost, function admirable are sought
Novel conductive paste, with base metal substitute noble metal prepare electrocondution slurry turn into development inexorable trend.From British Electric
Research association has used (Fedrizzi, Effect of powder since conducting function phase of the aluminium dioxide as electrocondution slurry
painting procedures on the filiform corrosion of aluminium profiles,Progress
in organic coatings,59(2007)230-238；Maiti,Synthesis and characterization of
molybdenum aluminide nanoparticles reinforced aluminium matrix composites,
J.Alloy.Compd., 458 (2008) 450-456), various countries scientific research personnel has progressively carried out grinding on base metal electrocondution slurry
Study carefully and apply work.In terms of electrocondution slurry, (Wu, Preparation of micron-sized flake are starched for copper
copper powder for base-metal-electrode multi-layer ceramic capacitor,journal
of materials processing technology,209(2009)1129-1133；Wu,Preparation of fine
copper powders and their application in bme-mlcc,Journal of University of
Science and Technology Beijing,Mineral,Metallurgy,Material,13(2006)250-255)、
Nickel starches (Lee, Characteristics of surface-modified metal hydride electrode with
flake ni by the ball-milling process,J.Alloy.Compd.,330–332(2002)835-840；
Yoshinaga,Highly densed-mh electrode using flaky nickel powder and gas-
atomized hydrogen storage alloy powder,J.Alloy.Compd.,330–332(2002)846-850)、
Corronil slurry (Songping, Preparation of ultra fine copper-nickel bimetallic
Powders for conductive thick film, Intermetallics, 15 (2007) 1316-1321), ormolu
Slurry (Kalendova, Comparison of the efficiency of inorganic nonmetal pigments
with zinc powder in anticorrosion paints,Progress in organic coatings,57
(2006)1-10；Renger,Rheology studies on highly filled nano-zirconia
Suspensions, Journal of the European Ceramic Society, 27 (2007) 2361-2367) carry out
Extensive research, and copper slurry be successfully applied to hydrid integrated circuit and multi-chip module electrode prepare (Wang,
Research of ltcc/cu,ag multilayer substrate in microelectronic packaging,
Materials Science and Engineering:B,94(2002)48-53)。
In recent years, it is growing day by day for the demand of the silver paste substitute in solar cell field, the main screening of alternative metals
Standard is exactly resistivity and price.The resistivity of silver is 1.59 × 10-8Ω m, and the resistivity of copper is only slightly higher, is 1.75
×10-8Ω·m.Also, the price of copper is shown far below silver, the data of the July in 2016 of Shanghai on the 1st futures exchange, the valency of copper
Lattice are about 45 yuan/kg, and the price of silver is about 4309 yuan/kg (Http://www.Shfe.Com.Cn/), the price only phase of copper
When in nearly 1 the percent of silver, therefore using conducting function phase of the copper as electrocondution slurry, it is electric can greatly to reduce preparation
The material cost in pond.Advantage of the copper in terms of resistivity and cost two, turns into and substitutes optimal selection silver-colored in electrocondution slurry, adopt
Silver powder is substituted as the copper slurry of conducting function phase as study hotspot in recent years by the use of copper powder.
The gate line electrode of conventional solar cell is the sinter molding after silk-screen printing silver paste, the process generally use
Schubert Sintering Models (Schubert, Thick film metallisation of crystalline silicon
solar cells:Mechanisms,models and applications,PhD(2006)；Schubert,Current
transport mechanism in printed ag thick film contacts to an n-type-emiter of
a crystalline solar cell 19th European Solar Energy Conference and
Exhibition, (2004) 813-816) description：In sintering process, gradual volatiling reaction after organic carrier is heated.Work as temperature
When reaching glass transition temperature, the glass dust in silver paste starts to soften.Soften state glass-coated silver powder, while penetrate into silver paste
Infiltrated on interface between silicon emitter and etch SiNx:H films.Soften state glass etching SiNx:After H films, glass dust
In lead oxide and silicon redox reaction occurs, metallic lead is generated in the interface zone of silicon emitter and printing slurry, with slurry
Silver contact in material, reduces silver point, generates the pb-ag alloy of liquid phase, and silver has certain diffusion in silicon.Due to liquid phase
Pb-ag alloy is different to the etch rate of each crystal orientation of silicon emitter so that etched surface is in inverted pyramid structure.When temperature reduces
When, pb-ag alloy is according to phasor split-phase, and silver recrystallization is on (111) face of inverted pyramid.And when using copper slurry replacement silver paste, meeting
There are two technical barriers, in sintering process the oxidation of copper and caused by the diffusion of copper launch site it is high compound.One side
Face, copper is oxidizable relative to galactic pole, and the oxide layer of Surface Creation can not prevent internal oxidation continue occur (Hu,
Kinetic investigation of copper film oxidation by spectroscopic ellipsometry
and reflectometry,Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and
Films, 18 (2000) 2527-2532), the cupric oxide resistivity of generation is larger, significantly increases the line resistance of gate line electrode,
And then it have impact on the raising of solar cell performance.And if completely without the presence of oxygen, back surface and positive table in sintering atmosphere
Resin component in starch adhesive material can not all become volatile oxide, it is difficult to be removed from battery surface.On the other hand, due to copper
There is larger diffusion coefficient in silicon materials, diffusion coefficient of the copper in silicon is about 7.3 × 10-8cm2/ s, much larger than the diffusion of silver
Coefficient 1.5 × 10-15cm2/s(Fisher,Diffusion in silicon, (1998)).Copper atom spread in silicon it is too deep,
It can reduce the life-span of carrier, improve compound caused saturation current density J02And open-circuit voltage is reduced, and even in low temperature
It is also possible to penetrate emitter region and cause to leak electricity under environment, especially hinders its popularization in shallow junction solar cell field.
In recent years, substantial amounts of work has been carried out in terms of the research of copper slurry both at home and abroad, core is all sintering process to be solved
In, copper is oxidizable and the technical barrier that easily spreads.It is main using expansion in order to prevent diffusion of the copper atom in silicon in sintering process
Dissipate barrier technology.Northeastern Japan university has carried out the research of correlation, by the oxidation that 5~10nm is prepared on battery emitter stage
Layer is as diffusion impervious layer to prevent the diffusion of copper.However, using method of the oxide layer as diffusion impervious layer is prepared, add
Technology step, and the oxidation technology temperature of crystal silicon solar battery is up to more than 900 DEG C, drop larger to the fire damage of silicon chip
Low solar cell electrical property.
And in order to suppress the oxidation of copper, mainly using silver-coated copper powder, low-temperature sintering, in organic carrier increase reproducibility into
Divide, using technologies such as reductive sintered atmosphere.Silver-coated copper powder mainly has replacement method, chemical reduction method, displacement and chemistry to answer
The methods of legal, atomized molten method.In terms of the research of silver-coated copper powder, Korean science technical college, South Korea's Materials Research Laboratories and
The joint research of KonKuk University of South Korea shows, 0.45 μm of average grain diameter, the silver-coated copper powder that silver content is 20wt% are placed in into air
In one month, 95% not oxidized (Jung, Air-stable the silver-coated copper of silver-coated copper powder
particles of sub-micrometer size,J.Colloid Interface Sci.,364(2011)574-581)。
Canada Calgary university and the joint study silver copper-clad nano wire of University of Alberta, when silver content is 66.52wt%,
Silver-colored copper-clad nano wire has good inoxidizability, and 20.3% when weightening is from without silver cladding after nano wire oxidation has been reduced to silver
3.2% (Luo, Silver-coated copper nanowires with improved anti-oxidation during cladding
property as conductive fillers in low-density polyethylene,The Canadian
Journal of Chemical Engineering,91(2013)630-637).The research of TaiWan, China Feng Chia University shows,
The inoxidizability of flaky silver coated copper powder is better than ball-type silver-coated copper powder (Lin, Effects of oxidation and
particle shape on critical volume fractions of silver-coated copper powders
in conductive adhesives for microelectronic applications,Polymer Engineering&
Science,44(2004)2075-2082).Guangdong University of Technology researcher experimentally confirms, when the content of silver is
During 10wt%, can uniformly wrap up copper particle, silver-coated copper powder now have good inoxidizability (Cao,
Fabrication and performance of silver coated copper powder,Electronic
Materials Letters,8(2012)467-470).Further investigations have shown that increase efficient copper extractants of RE-608 and anti-
Between seasonable, while the concentration of silver nitrate is reduced, when content silver-colored in silver-coated copper powder is 6.86wt%, it becomes possible to make silver-coated copper powder
With good inoxidizability (Cao, Preparation of silver-coated copper powder and its
oxidation resistance research,Powder Technology,226(2012)53-56).Guangdong elegance and talent is high-new
Silver-coated copper powder prepared by Science and Technology Co., Ltd. when silver content is 5wt%~18wt%, problem of oxidation can improve 40~
140 DEG C, have good inoxidizability (Tang founding father, the preparation of silver-coated copper powder and its performance, electronic component and material, 28
(2009)66-66).However, the technology of preparing of silver-coated copper powder is complex, the clad ratio of silver-colored copper-clad particle and being evenly coated property are still
The problem of to exist, although and the technology can suppress the oxidation of copper, material cost is still higher than the slurry using copper powder
Material, can only be a kind of transitional electrocondution slurry technology.Japanese AIST research institutes with the addition of low using low-temperature sintering technology processing
The copper slurry of melting alloy particle, relative to high temperature sintering environment, low-temperature sintering inhibits oxidation (Yoshiba, the Cost- of copper
effective front contact metalization by copper paste for screen-printed
crystalline silicon solar cells,27th European Photovoltaic Solar Energy
Conference and Exhibition,(2012)1730-1732).Kunming Institute of Precious Metals is from alkali glass as nothing
Machine binding agent, adds reducing agent in organic carrier, and copper slurry direct sintering (Tan Fubin, can sinter in atmosphere in atmosphere
Copper electrocondution slurry, noble metal, 13 (1992) 40-44).However, the reduction agent dose added in organic carrier is too small, can not
Effectively prevent copper oxidation, and when additive capacity it is excessive, can accordingly reduce the content of copper powder again, the window of technology is smaller.
Northeastern Japan university is sintered technique using reducing atmosphere, the cupric oxide on gate line electrode can be reduced into metallic copper,
So as to reduce the line resistance of gate line electrode.However, reducibility gas is mostly flammable explosive gas, how technically effectively to avoid
Gas leakage is still significant problem to be solved.
The content of the invention
It is an object of the invention to overcome prior art be difficult to solve copper it is oxidizable and easily spread technical barrier the shortcomings that,
It is proposed a kind of crystal silicon solar battery base metal front electrode and preparation method thereof.The present invention is replaced using nickel slurry, copper slurry, aluminium tin slurry
Silver paste, nickel copper/aluminium tin base metal combination electrode is prepared, can both solve the technical barrier that copper is oxidizable and easily spreads simultaneously,
Cost of sizing agent can be greatly reduced.
To achieve the above object, crystal silicon solar battery front electrode of the present invention is base metal combination electrode, the compound electric
The bottom of pole is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminium tin electrode.
The present invention prepares crystal silicon solar battery base metal front electrode.Using nano-nickel powder, copper nanoparticle, nanometer aluminium powder,
Nanometer glass putty base metal particle substitutes silver powder as conducting function phase, cohesive, tactile with reference to glass dust and organic carrier regulation and control slurry
Denaturation, rheological characteristic performance, in crystal silicon solar battery front successively preset nickel slurry, copper slurry and aluminium tin slurry, resistance is made after drying successively
Diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminium tin electrode, nickel copper/aluminium tin base metal is made after low-temperature sintering and answers
Composite electrode, substitute noble silver electrode.Crystal silicon solar battery front electrode preparation cost prepared by the present invention is low, can be achieved efficient
Rate industrialization.
The step of crystal silicon solar battery base metal front electrode of the present invention and preparation method thereof, is as follows：
(1) using silk-screen printing or pneumatic printing or ink jet printing method in the preset resistance diffusion layer in crystal silicon solar battery surface
Slurry --- nickel is starched；
(2) using equipment baking steps (1) such as drying ovens in the preset nickel slurry in crystal silicon solar battery surface, obtained resistance diffusion
Layer electrode；
(3) the methods of silk-screen printing or pneumatic printing or ink jet printing is used in the obtained resistance diffusion layer electrode of step (2)
Upper preset conductive layer slurry --- copper is starched；
(4) using the equipment baking steps (3) such as drying oven copper slurry preset on resistance diffusion layer electrode, conductive layer electricity is made
Pole；
(5) the methods of silk-screen printing or pneumatic printing or ink jet printing is used made from step (4) on conducting layer electrode
Preset anti oxidation layer slurry --- aluminium tin is starched；
(6) using the equipment baking steps (5) such as drying oven aluminium tin slurry preset on conducting layer electrode, anti oxidation layer is made
Electrode；
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), nickel copper/aluminium tin base metal combination electrode is made.
Described nickel slurry is airborne by having for 85~95wt% nano-nickel powder, 1~5wt% glass dust and 4~14wt%
Body is formed, and nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, are filtered after three-roll grinder is ground
It is made.
The particle diameter of described nano-nickel powder is 500~800nm, and purity is more than 99%.
Described glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt%
B2O3With 3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3It is placed in after mixing in proportion
Heated in 1400 DEG C of Muffle furnaces, simultaneously ball milling is made for quenching after being incubated 60min.
Described organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl
Cellulose, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate and 4wt% polyethylene glycol composition,
Butyl, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are pressed
It is placed in after ratio is well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
Described copper slurry is airborne by having for 85~95wt% copper nanoparticle, 1~5wt% glass dust and 4~14wt%
Body is formed, and copper nanoparticle, glass dust and organic carrier after heating stirring is uniform in proportion, are filtered after three-roll grinder is ground
It is made.The particle diameter of copper nanoparticle is 500~800nm in described copper slurry, and purity is more than 99%.
Described glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt%
B2O3With 5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3It is placed in after mixing in proportion
Heated in 1400 DEG C of Muffle furnaces, simultaneously ball milling is made for quenching after being incubated 60min.
Described organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl
Cellulose, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate and 6wt% polyethylene glycol composition,
Butyl, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are pressed
It is placed in after ratio is well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
Described aluminium tin slurry by 65~70wt% nanometer aluminium powder, 20~25wt% nanometer glass putty, 1~5wt% glass
Glass powder and 4~14wt% organic carrier form.
The particle diameter of described nanometer aluminium powder is 500~800nm, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier after heating stirring is uniform in proportion,
Filter and be made after three-roll grinder is ground.
Described glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt%
B2O3With 5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3It is placed in after mixing in proportion
Heated in 1400 DEG C of Muffle furnaces, simultaneously ball milling is made for quenching after being incubated 60min.
Described organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl
Cellulose, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate and 4wt% polyethylene glycol composition,
Butyl, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are pressed
It is placed in after ratio is well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
In described step (2), step (4) and step (6), drying temperature scope is 100~300 DEG C, drying time 1
~10min；In described step (7), peak firing temperature scope is 300~600 DEG C, and sintering time is 1~20min.
Beneficial effects of the present invention are embodied in：
(1) silver paste is replaced using nickel slurry, copper slurry, aluminium tin slurry, prepares nickel copper/aluminium tin base metal front combination electrode, simultaneously
Low cost, satisfactory electrical conductivity, low diffusivity and inoxidizability can be achieved.
(2) diffusion layer technology is hindered using nanometer, the bottom electrode prepared using printing nano nickel slurry is as prevention copper atom
The barrier layer spread to silicon emitter, diffusion coefficient of the nickel in silicon is about 2.4 × 10-15cm2/ s, much smaller than the diffusion system of copper
Number, it can effectively avoid the diffusion problem of copper.
(3) base metal anti oxidation layer technology is used, is starched using aluminium tin and is used as oxidation resistant electrocondution slurry, aluminium powder rises anti-oxidant
Effect, glass putty enhancing electrode welding effect, forms surface oxidation-resistant layer on copper electrode surface, can effectively solve the problem that copper conductive layer
Problem of oxidation.
(4) resistivity of nickel is 6.84 × 10-6Ω cm, aluminium are 2.83 × 10-8Ω cm, tin are 1 × 10-7Ω m,
And nickel dam and aluminium tin layers are all relatively thin, thickness is respectively less than 1 μm, electrode main component or copper.The resistivity of silver is 1.59 × 10-8
Ω m, and the resistivity of copper is only slightly higher, is 1.75 × 10-8Ω·m.Therefore combination electrode resistivity is suitable with silver electrode.
The price of copper is about 45 yuan/kg, and the price of nickel is about 100 yuan/kg, and aluminium is about 20 yuan/kg, and tin is about 150 yuan/kg, remote low
In 4309 yuan/kg of silver price, the cheap advantage of combination electrode ensure that.
(5) using resistance oxidation low-temperature sintering technology, the oxidation of copper is reduced to reduce combination electrode by low-temperature sintering technology
Line resistance.
The present invention has many-sided advantages such as theoretical reasonability, industrial feasibility.First, diffusion coefficient of the nickel in silicon be about
For 2.4 × 10-15cm2/ s, much smaller than the diffusion coefficient of copper, it can effectively avoid the diffusion problem similar to copper.Secondly, the electricity of nickel
Resistance rate is 6.84 × 10-6Ω cm, aluminium are 2.83 × 10-8Ω cm, tin are 1 × 10-7Ω m, and nickel dam and aluminium tin layers are all
Relatively thin, thickness is respectively less than 1 μm, electrode main component or copper, and the resistivity of copper is only slightly higher, is 1.75 × 10-8Ω·
M, therefore combination electrode resistivity is still close with silver electrode.3rd, the price of copper is about 45 yuan/kg, and the price of nickel is about 100
Member/kg, aluminium are about 20 yuan/kg, and tin is about 150 yuan/kg, the price far below silver, ensure that the cheap advantage of combination electrode.
Scientific guidance can be provided by the research of the present invention to prepare the cheap efficiently base metal slurry of alternative silver paste.
With regard in terms of application prospect, IEA and CPIA data shows, end the whole world in 2015 and add up installation amount more than 200GW,
Just install 53GW in only 2015 whole world, country's installation 15GW.Global solar module yield is about 60GW within 2015, and the country is about
For 43GW.In the solar cell technology of preparing of various industrialization, crystal silicon solar battery technology accounts for more than 90% share, and silver-colored
Slurry is the prime cost expenditure of crystal silicon solar battery, and market potential is huge.According to current conventional crystal silicon battery efficiency and silver paste list
Budgetary estimate is consumed, global silver paste dosage is about 1626 tons within 2015, about 1165 tons of the country.It is that is, sudden and violent even in the silver-colored valency in the whole world
2015 fallen, global silver paste also consumed nearly 9,800,000,000 yuan, nearly 7,000,000,000 yuan of domestic consumption.And as photovoltaic market is recovered, it is brilliant
Silion cell yield cumulative year after year, staple commodities price stabilize, and future will consume hundreds of hundred million silver paste for 1 year.And if adopted
With base metal slurry, it will greatly reduce electrocondution slurry cost.Do a simple measuring and calculating, it is assumed that base metal combination electrode with
Silver electrode has same shape, and nickel, copper, the volume ratio of aluminium tin single-layer electrodes are 2:40:1, while except gold in base metal slurry
The outer other components price of metal particles is identical with silver paste, then after silver paste is by base metal slurry replacing whole of the present invention, global crystal silicon
Solar cell slurry one, which is only, about consumes 100,000,000 yuan, domestic about to consume 0.7 hundred million yuan, and 1 percent before just corresponding to, greatly
Reduce production cost.If silver paste is all substituted by base metal slurry of the present invention, according to the CPIA whole world announced and state's inner assembly
The global and domestic cost-effective volume of base metal slurry of yield estimation, in 2016 years, global cost of sizing agent can cut down 10,500,000,000
Member, domestic cost of sizing agent cut down 8,000,000,000 yuan.Although the present invention program adds secondary printing process, add certain equipment and throw
Enter, but by taking the producing line that wall scroll produces 30000 daily as an example, the slurry consumption can of 1 year saves 7,800,000 yuan, completely covers and sets
Standby input, still more increased printing equipment can use for many years.
Brief description of the drawings
Fig. 1 nickel coppers/aluminium tin base metal combined electrode structure schematic diagram.
Embodiment
As shown in figure 1, crystal silicon solar battery front electrode of the present invention is base metal combination electrode, the bottom of the combination electrode
Layer is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminium tin electrode.
Embodiment 1
(1) using being screen printed onto, crystal silicon solar battery surface is preset to hinder diffusion layer slurry：Nickel is starched；
Hinder organic carrier group of the diffusion layer slurry nickel slurry by 85wt% nano-nickel powder, 1wt% glass dust and 14wt%
Into by nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, system is filtered after three-roll grinder is ground
；
The particle diameter of nano-nickel powder in slurry is 500~800nm, and purity is more than 99%；
Glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt% B2O3、
3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by two
Butyl glycol ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are in proportion
It is placed in after well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(2) using the preset nickel slurry of drying oven baking step (1), resistance diffusion layer electrode is made.Drying temperature is 100 DEG C,
Drying time is 10min.
(3) use and be screen printed onto preset conductive layer slurry on the resistance diffusion layer electrode of step (2) preparation：Copper is starched；It is conductive
Layer slurry copper slurry is made up of the organic carrier of 85wt% copper nanoparticle, 1wt% glass dust and 14wt%, by copper nanoparticle,
Glass dust and organic carrier are filtered after three-roll grinder is ground and are made after heating stirring is uniform in proportion；
The particle diameter of copper nanoparticle in slurry is 500~800nm, and purity is more than 99%；
Glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate, 6wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(4) using the preset copper slurry of drying oven baking step (3), conducting layer electrode is made.Drying temperature is 100 DEG C, is dried
The dry time is 10min.
(5) use and be screen printed onto preset anti oxidation layer slurry on the conducting layer electrode of step (4) preparation：Aluminium tin is starched；
Anti oxidation layer slurry aluminium tin slurry by 65wt% nanometer aluminium powder, 20wt% nanometer glass putty, 1wt% glass dust and
14wt% organic carrier composition, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier, heating stirring is uniform in proportion
Afterwards, filter and be made after three-roll grinder is ground；
The particle diameter of nanometer aluminium powder in slurry is 500~800nm, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%；
Glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(6) using the preset aluminium tin slurry of drying oven baking step (5), anti oxidation layer electrode is made.Drying temperature is 100
DEG C, drying time 10min.
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), obtained nickel copper/aluminium tin base metal combination electrode.Peak firing temperature is
300 DEG C, sintering time 20min.
Embodiment 2
(1) using pneumatic printing in the preset resistance diffusion layer slurry in crystal silicon solar battery surface：Nickel is starched；
Hinder organic carrier group of the diffusion layer slurry nickel slurry by 85wt% nano-nickel powder, 5wt% glass dust and 10wt%
Into by nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, system is filtered after three-roll grinder is ground
；
The particle diameter of nano-nickel powder is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt% B2O3、
3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(2) using the preset nickel slurry of drying oven baking step (1), resistance diffusion layer electrode is made.Drying temperature is 200 DEG C,
Drying time is 5min.
(3) pneumatic printing preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2) is used：Copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of 85wt% copper nanoparticle, 5wt% glass dust and 10wt%,
By copper nanoparticle, glass dust and organic carrier after heating stirring is uniform in proportion, filter and be made after three-roll grinder is ground；
The particle diameter of copper nanoparticle is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate, 6wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(4) using the preset copper slurry of drying oven baking step (3), conducting layer electrode is made.Drying temperature is 200 DEG C, is dried
The dry time is 5min.
(5) pneumatic printing preset anti oxidation layer slurry on conducting layer electrode prepared by step (4) is used：Aluminium tin is starched；
Anti oxidation layer slurry aluminium tin slurry by 65wt% nanometer aluminium powder, 20wt% nanometer glass putty, 5wt% glass dust and
10wt% organic carrier composition, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier, heating stirring is uniform in proportion
Afterwards, filter and be made after three-roll grinder is ground；
The particle diameter of nanometer aluminium powder is 500~800nm in slurry, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%；
Glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(6) using the preset aluminium tin slurry of drying oven baking step (5), anti oxidation layer electrode is made.Drying temperature is 200
DEG C, drying time 5min.
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), obtained nickel copper/aluminium tin base metal combination electrode.Peak firing temperature is
400 DEG C, sintering time 15min.
Embodiment 3
(1) using ink jet printing in the preset resistance diffusion layer slurry in crystal silicon solar battery surface：Nickel is starched；
Hinder organic carrier group of the diffusion layer slurry nickel slurry by 89wt% nano-nickel powder, 1wt% glass dust and 10wt%
Into by nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, system is filtered after three-roll grinder is ground
；
The particle diameter of nano-nickel powder is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt% B2O3、
3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(2) using the preset nickel slurry of drying oven baking step (1), resistance diffusion layer electrode is made.Drying temperature is 300 DEG C,
Drying time is 1min.
(3) ink jet printing preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2) is used：Copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of 89wt% copper nanoparticle, 1wt% glass dust and 10wt%,
By copper nanoparticle, glass dust and organic carrier after heating stirring is uniform in proportion, filter and be made after three-roll grinder is ground；
The particle diameter of copper nanoparticle is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate, 6wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(4) using the preset copper slurry of drying oven baking step (3), conducting layer electrode is made.Drying temperature is 300 DEG C, is dried
The dry time is 1min.
(5) ink jet printing preset anti oxidation layer slurry on conducting layer electrode prepared by step (4) is used：Aluminium tin is starched；It is anti-
Oxide layer slurry aluminium tin is starched by 65wt% nanometer aluminium powder, 24wt% nanometer glass putty, 1wt% glass dust and having for 10wt%
Airborne body composition, nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier after heating stirring is uniform in proportion, are ground through three rollers
Filter and be made after grinding machine grinding；
The particle diameter of nanometer aluminium powder is 500~800nm in slurry, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%；
Glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(6) using the preset aluminium tin slurry of drying oven baking step (5), anti oxidation layer electrode is made.Drying temperature is 300
DEG C, drying time 1min.
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), obtained nickel copper/aluminium tin base metal combination electrode.Peak firing temperature is
500 DEG C, sintering time 5min.
Embodiment 4
(1) using being screen printed onto, crystal silicon solar battery surface is preset to hinder diffusion layer slurry：Nickel is starched；
Hinder organic carrier group of the diffusion layer slurry nickel slurry by 95wt% nano-nickel powder, 1wt% glass dust and 4wt%
Into by nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, system is filtered after three-roll grinder is ground
；
The particle diameter of nano-nickel powder is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt% B2O3、
3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(2) using the preset nickel slurry of drying oven baking step (1), resistance diffusion layer electrode is made.Drying temperature is 150 DEG C,
Drying time is 8min.
(3) use and be screen printed onto preset conductive layer slurry on the resistance diffusion layer electrode of step (2) preparation：Copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of 95wt% copper nanoparticle, 1wt% glass dust and 4wt%,
By copper nanoparticle, glass dust and organic carrier after heating stirring is uniform in proportion, filter and be made after three-roll grinder is ground；Slurry
The particle diameter of copper nanoparticle is 500~800nm in material, and purity is more than 99%；
Glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate, 6wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(4) using the preset copper slurry of drying oven baking step (3), conducting layer electrode is made.Drying temperature is 150 DEG C, is dried
The dry time is 8min.
(5) use and be screen printed onto preset anti oxidation layer slurry on the conducting layer electrode of step (4) preparation：Aluminium tin is starched；
Anti oxidation layer slurry aluminium tin slurry by 70wt% nanometer aluminium powder, 25wt% nanometer glass putty, 1wt% glass dust and
4wt% organic carrier composition, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier, heating stirring is uniform in proportion
Afterwards, filter and be made after three-roll grinder is ground；
The particle diameter of nanometer aluminium powder is 500~800nm in slurry, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%；
Glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(6) using the preset aluminium tin slurry of drying oven baking step (5), anti oxidation layer electrode is made.Drying temperature is 150
DEG C, drying time 8min.
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), obtained nickel copper/aluminium tin base metal combination electrode.Peak firing temperature is
600 DEG C, sintering time 1min.
Embodiment 5
(1) using being screen printed onto, crystal silicon solar battery surface is preset to hinder diffusion layer slurry：Nickel is starched；
Hinder organic carrier group of the diffusion layer slurry nickel slurry by 90wt% nano-nickel powder, 2wt% glass dust and 8wt%
Into by nano-nickel powder, glass dust and organic carrier after heating stirring is uniform in proportion, system is filtered after three-roll grinder is ground
；
The particle diameter of nano-nickel powder is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% A12O3, 4wt% B2O3、
3wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(2) using the preset nickel slurry of drying oven baking step (1), resistance diffusion layer electrode is made.Drying temperature is 250 DEG C,
Drying time is 3min.
(3) use and be screen printed onto preset conductive layer slurry on the resistance diffusion layer electrode of step (2) preparation：Copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of 90wt% copper nanoparticle, 2wt% glass dust and 8wt%,
By copper nanoparticle, glass dust and organic carrier after heating stirring is uniform in proportion, filter and be made after three-roll grinder is ground；
The particle diameter of copper nanoparticle is 500~800nm in slurry, and purity is more than 99%；
Glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% A12O3, 5wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose
The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate, 6wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(4) using the preset copper slurry of drying oven baking step (3), conducting layer electrode is made.Drying temperature is 250 DEG C, is dried
The dry time is 3min.
(5) use and be screen printed onto preset anti oxidation layer slurry on the conducting layer electrode of step (4) preparation：Aluminium tin is starched；
Anti oxidation layer slurry aluminium tin slurry by 68wt% nanometer aluminium powder, 22wt% nanometer glass putty, 2wt% glass dust and
8wt% organic carrier composition, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier after heating stirring is uniform in proportion,
Filter and be made after three-roll grinder is ground；
The particle diameter of nanometer aluminium powder is 500~800nm in slurry, and purity is more than 99%；The particle diameter of nanometer glass putty for 500~
800nm, purity are more than 99%；
Glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% A12O3, 4wt% B2O3、
5wt% Bi2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O31400 DEG C of Muffles are placed in after mixing in proportion
Heated in stove, simultaneously ball milling is made for quenching after being incubated 60min；
Organic carrier by 65wt% butyl, 10wt% ATBC, 2wt% ethyl cellulose
The polyethylene glycol composition of element, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate, 4wt%, by diethyl
Glycol butyl ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol mix in proportion
It is placed in after closing uniformly in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
(6) using the preset aluminium tin slurry of drying oven baking step (5), anti oxidation layer electrode is made.Drying temperature is 250
DEG C, drying time 3min.
(7) using conductive layer made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4)
Anti oxidation layer electrode made from electrode and step (6), obtained nickel copper/aluminium tin base metal combination electrode.Peak firing temperature is
450 DEG C, sintering time 10min.
Performance test example
Using 156 × 156mm2Polysilicon chip, embodiment 1~5 prepare base metal combination electrode corresponding to battery
Performance, in AM 1.5G, 100mW/cm2, under conditions of 25 DEG C, tested using I-V testers, as a result as shown in table l.
The embodiment battery performance of table 1
| The present invention | Open-circuit voltage (V) | Short circuit current (A) | Fill factor, curve factor (%) | Electricity conversion (%) |
| Embodiment 1 | 0.622 | 8.88 | 78.01 | 17.72 |
| Embodiment 2 | 0.623 | 8.84 | 78.09 | 17.68 |
| Embodiment 3 | 0.625 | 8.86 | 78.01 | 17.77 |
| Embodiment 4 | 0.627 | 8.86 | 77.84 | 17.79 |
| Embodiment 5 | 0.628 | 8.84 | 78.16 | 17.83 |
Claims (10)
- A kind of 1. crystal silicon solar battery base metal front electrode preparation method, it is characterised in that：Using nano-nickel powder, Nanometer Copper Powder, nanometer aluminium powder, nanometer glass putty base metal particle substitute silver powder as conducting function phase, regulate and control with reference to glass dust and organic carrier Slurry bonding, thixotropy, rheological characteristic performance, in crystal silicon solar battery front successively preset nickel slurry, copper slurry and aluminium tin slurry, dry successively Resistance diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminium tin electrode are made after dry, nickel copper/aluminium is made after low-temperature sintering Tin base metal combination electrode, substitute noble silver electrode.
- 2. crystal silicon solar battery base metal front electrode preparation method according to claim 1, it is characterised in that：Described Preparation method step is as follows：(1) using silk-screen printing or pneumatic printing or ink jet printing method in the preset resistance diffusion layer slurry in crystal silicon solar battery surface Material --- nickel is starched；(2) using drying oven baking step (1) in the preset nickel slurry in crystal silicon solar battery surface, obtained resistance diffusion layer electrode；(3) use silk-screen printing or pneumatic printing or ink jet printing method preset on the obtained resistance diffusion layer electrode of step (2) Conductive layer slurry --- copper is starched；(4) using drying oven baking step (3) copper slurry preset on resistance diffusion layer electrode, conducting layer electrode is made；(5) resisted using silk-screen printing or pneumatic printing or ink jet printing method preset on conducting layer electrode made from step (4) Oxide layer slurry --- aluminium tin is starched；(6) using drying oven baking step (5) aluminium tin slurry preset on conducting layer electrode, anti oxidation layer electrode is made；(7) using conducting layer electrode made from sintering furnace while the obtained resistance diffusion layer electrode of heat treatment step (2), step (4) With step (6) made from anti oxidation layer electrode, be made nickel copper/aluminium tin base metal combination electrode.
- 3. crystal silicon solar battery base metal front electrode preparation method according to claim 2, it is characterised in that：Described Nickel slurry is made up of the organic carrier of 85~95wt% nano-nickel powder, 1~5wt% glass dust and 4~14wt%, by nano nickel Powder, glass dust and organic carrier are filtered after three-roll grinder is ground and are made after heating stirring is uniform in proportion.
- 4. crystal silicon solar battery base metal front electrode preparation method according to claim 3, it is characterised in that：Described The particle diameter of nano-nickel powder is 500~800nm, and purity is more than 99%；Described glass dust by 45wt% PbO, 25wt% TeO2, 17wt% SiO2, 6wt% Al2O3, 4wt% B2O3With 3wt% Bi2O3Composition, by PbO, TeO2、SiO2、 Al2O3、B2O3And Bi2O3It is placed in 1400 DEG C of Muffle furnaces and heats after mixing in proportion, is incubated quenching and ball milling system after 60min ；Described organic carrier by 62wt% butyl, 15wt% ATBC, 2wt% ethyl cellulose The polyethylene glycol composition of element, 6wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate and 4wt%, by two Butyl glycol ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are in proportion It is placed in after well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
- 5. crystal silicon solar battery base metal front electrode preparation method according to claim 2, it is characterised in that：Described Copper slurry is made up of the organic carrier of 85~95wt% copper nanoparticle, 1~5wt% glass dust and 4~14wt%, by Nanometer Copper Powder, glass dust and organic carrier are filtered after three-roll grinder is ground and are made after heating stirring is uniform in proportion.
- 6. method prepared by crystal silicon solar battery base metal front electrode according to claim 5, it is characterised in that：It is described The particle diameter of copper nanoparticle be 500~800nm, purity is more than 99%；Described glass dust by 50wt% PbO, 20wt% TeO2, 15wt% SiO2, 5wt% Al2O3, 5wt% B2O3With 5wt% Bi2O3Composition, by PbO, TeO2、SiO2、 Al2O3、B2O3And Bi2O3It is placed in 1400 DEG C of Muffle furnaces and heats after mixing in proportion, is incubated quenching and ball milling system after 60min ；Described organic carrier by 60wt% butyl, 15wt% ATBC, 3wt% ethyl cellulose The polyethylene glycol composition of element, 6wt% polyamide wax, 5wt% lecithin, 5wt% tributyl phosphate and 6wt%, by two Butyl glycol ether, ATBC, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are in proportion It is placed in after well mixed in 80 DEG C of thermostatic containers, stirs 5 hours and be made.
- 7. crystal silicon solar battery base metal front electrode preparation method according to claim 2, it is characterised in that：Described Aluminium tin slurry by 65~70wt% nanometer aluminium powder, 20~25wt% nanometer glass putty, 1~5wt% glass dust and 4~14wt% Organic carrier composition, by nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier after heating stirring is uniform in proportion, through three Filter and be made after roller mill grinding.
- 8. crystal silicon solar battery base metal front electrode preparation method according to claim 7, it is characterised in that：Described The particle diameter of nanometer aluminium powder is 500~800nm, and purity is more than 99%；The particle diameter of described nanometer glass putty is 500~800nm, purity More than 99%；Described glass dust by 40wt% PbO, 30wt% TeO2, 15wt% SiO2, 6wt% Al2O3、 4wt% B2O3With 5wt% Bi2O3Composition, by PbO, TeO2、SiO2、Al2O3、B2O3And Bi2O3Mix in proportion rearmounted Heated in 1400 DEG C of Muffle furnaces, simultaneously ball milling is made for quenching after being incubated 60min；Described organic carrier by 65wt% diethyl two Alcohol butyl ether, 10wt% ATBC, 2wt% ethyl cellulose, 8wt% polyamide wax, 6wt% lecithin, 5wt% tributyl phosphate and 4wt% polyethylene glycol composition, by butyl, ATBC, ethyl cellulose Element, polyamide wax, lecithin, tributyl phosphate and polyethylene glycol are placed in after mixing in proportion in 80 DEG C of thermostatic containers, are stirred Mix 5 hours and be made.
- 9. crystal silicon solar battery base metal front electrode preparation method according to claim 2, it is characterised in that：Described In step (2), step (4) and step (6), drying temperature scope is 100~300 DEG C, and drying time is 1~10min；Described In step (7), peak firing temperature scope is 300~600 DEG C, and sintering time is 1~20min.
- 10. crystal silicon solar battery base metal front electrode preparation method according to claim 1, it is characterised in that described Crystal silicon solar battery base metal front electrode prepared by preparation method is base metal combination electrode, and the bottom of the combination electrode is Diffusion layer nickel electrode is hindered, middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminium tin electrode.
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