CN106098808A - A kind of crystal silicon solar battery base metal front electrode and preparation method thereof - Google Patents
A kind of crystal silicon solar battery base metal front electrode and preparation method thereof Download PDFInfo
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- CN106098808A CN106098808A CN201610649477.1A CN201610649477A CN106098808A CN 106098808 A CN106098808 A CN 106098808A CN 201610649477 A CN201610649477 A CN 201610649477A CN 106098808 A CN106098808 A CN 106098808A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 239000010953 base metal Substances 0.000 title claims abstract description 48
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims description 19
- 239000002002 slurry Substances 0.000 claims abstract description 148
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 128
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000010949 copper Substances 0.000 claims abstract description 105
- 229910052802 copper Inorganic materials 0.000 claims abstract description 105
- 239000011521 glass Substances 0.000 claims abstract description 97
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 72
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000428 dust Substances 0.000 claims abstract description 67
- 229910052709 silver Inorganic materials 0.000 claims abstract description 64
- 239000004332 silver Substances 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 63
- 239000000843 powder Substances 0.000 claims abstract description 62
- 238000001035 drying Methods 0.000 claims abstract description 52
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 43
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000004411 aluminium Substances 0.000 claims abstract description 27
- 239000002105 nanoparticle Substances 0.000 claims abstract description 24
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims abstract description 14
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 8
- 239000008187 granular material Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 91
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 claims description 84
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 42
- 239000004952 Polyamide Substances 0.000 claims description 42
- 239000002202 Polyethylene glycol Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000000787 lecithin Substances 0.000 claims description 42
- 235000010445 lecithin Nutrition 0.000 claims description 42
- 229940067606 lecithin Drugs 0.000 claims description 42
- 229920002647 polyamide Polymers 0.000 claims description 42
- 229920001223 polyethylene glycol Polymers 0.000 claims description 42
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 claims description 42
- 239000001856 Ethyl cellulose Substances 0.000 claims description 39
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 39
- 229920001249 ethyl cellulose Polymers 0.000 claims description 39
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 39
- 239000002245 particle Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 28
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 24
- 229910003069 TeO2 Inorganic materials 0.000 claims description 23
- 238000005245 sintering Methods 0.000 claims description 23
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 23
- 238000000498 ball milling Methods 0.000 claims description 22
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 21
- 238000010791 quenching Methods 0.000 claims description 21
- 230000000171 quenching effect Effects 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 238000003756 stirring Methods 0.000 claims description 21
- 229910052682 stishovite Inorganic materials 0.000 claims description 21
- 229910052905 tridymite Inorganic materials 0.000 claims description 21
- 238000007639 printing Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 238000007641 inkjet printing Methods 0.000 claims description 9
- 229920002472 Starch Polymers 0.000 claims description 8
- 235000019698 starch Nutrition 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 7
- 239000008107 starch Substances 0.000 claims description 7
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 229910052593 corundum Inorganic materials 0.000 claims 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 108
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 37
- 238000005516 engineering process Methods 0.000 description 22
- 210000004027 cell Anatomy 0.000 description 17
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 14
- 238000011160 research Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000004513 sizing Methods 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- HMPVUDRACAQMSH-UHFFFAOYSA-N [Al].[Mo].[Mo].[Mo] Chemical compound [Al].[Mo].[Mo].[Mo] HMPVUDRACAQMSH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010982 kinetic investigation Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of crystal silicon solar battery base metal front electrode, this crystal silicon solar battery front electrode is base metal combination electrode, and bottom is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminum tin electrode.The method preparing crystal silicon solar battery base metal front electrode uses nano-nickel powder, copper nanoparticle, nanometer aluminium powder, nanometer glass putty base metal granule to substitute argentum powder as conducting function phase, slurry bonding, thixotropy, rheological characteristic performance is regulated and controled in conjunction with glass dust and organic carrier, at the most preset nickel in crystal silicon solar battery front slurry, copper slurry and aluminum stannum slurry, resistance diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminum tin electrode is prepared after drying successively, prepare nickel copper/aluminum stannum base metal combination electrode after low-temperature sintering, substitute noble silver electrode.
Description
Technical field
The present invention relates to a kind of crystal silicon solar battery electrode and preparation method thereof.
Background technology
Reducing cost is that solar cell future can be by one of essential condition of broader applications, the reduction master of battery cost
The raising of battery efficiency to be depended on and the reduction of battery manufacture material cost.On the one hand, the raising of photoelectric transformation efficiency increases
The generated output of unit are photovoltaic cell component, reduces the cost relevant to generating area accordingly.On the other hand, use
The reduction of material cost is prepared, it is also possible to effectively reduce the cost of solar cell in battery.After the eighties in 20th century, battery
The lifting of efficiency is mainly due to optimization (Green, the The path to 25% of the technology of preparing such as gate line electrode, silicon emitter
silicon solar cell efficiency:History of silicon cell evolution,
Prog.Photovolt:Res.Appl.,17(2009)183-189).The lifting master of conventional uniform emitter stage crystal silicon battery efficiency
The improvement of size performance to be depended on.Solar cell front surface gate line electrode the most all uses high temperature sintering after printing silver slurry
Method prepare, but the higher price of silver constrains the reduction of solar cell cost.Therefore, low cost, function admirable are sought
Novel conductive paste, substitute noble metal with base metal and prepare electrocondution slurry and become the inexorable trend of development.From British Electric
Research association has used aluminium dioxide as (Fedrizzi, Effect of powder since the conducting function phase of electrocondution slurry
painting procedures on the filiform corrosion of aluminium profiles,Progress
in organic coatings,59(2007)230-238；Maiti,Synthesis and characterization of
molybdenum aluminide nanoparticles reinforced aluminium matrix composites,
J.Alloy.Compd., 458 (2008) 450-456), various countries scientific research personnel has progressively carried out grinding about base metal electrocondution slurry
Study carefully application work.In terms of electrocondution slurry, starch (Wu, Preparation of micron-sized flake for copper
copper powder for base-metal-electrode multi-layer ceramic capacitor,journal
of materials processing technology,209(2009)1129-1133；Wu,Preparation of fine
copper powders and their application in bme-mlcc,Journal of University of
Science and Technology Beijing,Mineral,Metallurgy,Material,13(2006)250-255)、
Nickel slurry (Lee, Characteristics of surface-modified metal hydride electrode with
flake ni by the ball-milling process,J.Alloy.Compd.,330–332(2002)835-840；
Yoshinaga,Highly densed-mh electrode using flaky nickel powder and gas-
atomized hydrogen storage alloy powder,J.Alloy.Compd.,330–332(2002)846-850)、
Corronil slurry (Songping, Preparation of ultra fine copper nickel bimetallic
Powders for conductive thick film, Intermetallics, 15 (2007) 1316-1321), ormolu
Slurry (Kalendova, Comparison of the efficiency of inorganic nonmetal pigments
with zinc powder in anticorrosion paints,Progress in organic coatings,57
(2006)1-10；Renger,Rheology studies on highly filled nano-zirconia
Suspensions, Journal of the European Ceramic Society, 27 (2007) 2361-2367) all carry out
Study widely, and copper slurry be successfully applied to the electrode of hydrid integrated circuit and multi-chip module prepare (Wang,
Research of ltcc/cu,ag multilayer substrate in microelectronic packaging,
Materials Science and Engineering:B,94(2002)48-53)。
In recent years, the demand for the silver slurry succedaneum in solar cell field grows with each passing day, the main screening of alternative metals
Standard is exactly resistivity and price.The resistivity of silver is 1.59 × 10-8Ω m, and the resistivity of copper is the most slightly higher, is 1.75
×10-8Ω·m.Further, the price of copper is far below silver, and the data of Shanghai on the 1st July in 2016 futures exchange show, the valency of copper
Lattice are about 45 yuan/kg, and the price of silver is about 4309 yuan/kg (Http: //www.Shfe.Com.Cn/), the price of copper only phase
When one of nearly percentage in silver, therefore use copper as the conducting function phase of electrocondution slurry, preparation electricity can be reduced greatly
The material cost in pond.Copper, in resistivity and the advantage of two aspects of cost, becomes and substitutes the optimum selection of silver in electrocondution slurry, adopt
Substitute argentum powder with copper powder to starch as the copper of conducting function phase and become study hotspot in recent years.
The gate line electrode of conventional solar cell is sinter molding after silk screen printing silver is starched, and this process generally uses
Schubert Sintering Model (Schubert, Thick film metallisation of crystalline silicon
solar cells:Mechanisms,models and applications,PhD(2006)；Schubert,Current
transport mechanism in printed ag thick film contacts to an n-type-emiter of
a crystalline solar cell 19th European Solar Energy Conference and
Exhibition, (2004) 813 816) describe: in sintering process, organic carrier be heated after gradually volatiling reaction.Work as temperature
When reaching glass transition temperature, the glass dust in silver slurry starts to soften.Soften state glass-coated argentum powder, penetrate into silver slurry simultaneously
And infiltrate on the interface between silicon emitter and etch SiNx: H thin film.Soften state glass etching SiNx: after H thin film, glass dust
In lead oxide and silicon generation redox reaction, the interface zone at silicon emitter with printing slurry generates metallic lead, with slurry
Silver contact in material, reduces silver point, generates the pb-ag alloy of liquid phase, and silver has certain diffusion in silicon.Due to liquid phase
Pb-ag alloy is different to the etch rate in each crystal orientation of silicon emitter so that etched surface is inverted pyramid structure.When temperature reduces
Time, pb-ag alloy is according to phasor split-phase, and silver recrystallization is on (111) face of inverted pyramid.And when using copper slurry to substitute silver slurry, meeting
Two technical barriers occur, in sintering process, the oxidation of copper and the height of launch site caused due to the diffusion of copper are combined.One side
Face, copper is oxidizable relative to galactic pole, and the oxide layer of Surface Creation can not stop the continuation of internal oxidation occur (Hu,
Kinetic investigation of copper film oxidation by spectroscopic ellipsometry
and reflectometry,Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and
Films, 18 (2000) 2527-2532), the copper oxide resistivity of generation is relatively big, significantly increases the line resistance of gate line electrode,
And then have impact on the raising of solar cell performance.And if entirely without the existence of oxygen, back surface and main schedule in sintering atmosphere
Resinous principle in starch adhesive material all can not become volatile oxide, it is difficult to removes from battery surface.On the other hand, due to copper
Having bigger diffusion coefficient in silicon materials, copper diffusion coefficient in silicon is about 7.3 × 10-8cm2/ s, much larger than the diffusion of silver
Coefficient 1.5 × 10-15cm2/s(Fisher,Diffusion in silicon, (1998)).Copper atom diffuses through deeply in silicon,
Can reduce the life-span of carrier, improve compound saturation current density J caused02And reduce open-circuit voltage, even and if at low temperature
It is also possible to penetrate emitter region under environment and causes electric leakage, especially hinder its popularization in shallow junction solar cell field.
In recent years, having carried out substantial amounts of work both at home and abroad in terms of the research of copper slurry, core is all intended to solve sintering process
In, the technical barrier of the oxidizable and easy diffusion of copper.In order to stop copper atom diffusion in silicon in sintering process, mainly use expansion
Dissipate barrier technology.The research that northeastern Japan university is correlated with, by preparing the oxidation of 5～10nm on battery emitter stage
Layer as diffusion impervious layer with stop copper diffusion.But, use preparation oxide layer as the method for diffusion impervious layer, add
Technology step, and the oxidation technology temperature of crystal silicon solar battery reaches more than 900 DEG C, relatively big to the hot injury of silicon chip, fall
Low solar cell electrical property.
And in order to suppress the oxidation of copper, mainly use silver-coated copper powder, low-temperature sintering, in organic carrier, increase reproducibility one-tenth
Divide, use the technology such as reductive sintered atmosphere.Silver-coated copper powder mainly has replacement method, chemical reduction method, displacement with chemistry again
The methods such as legal, atomized molten method.In terms of the research of silver-coated copper powder, Korean science technical college, Korea S's Materials Research Laboratories and
The joint research of KonKuk University of Korea S shows, the silver-coated copper powder that mean diameter 0.45 μm, silver content are 20wt% is placed in air
In one month, not oxidized (Jung, the Air-stable silver-coated copper of silver-coated copper powder of 95%
particles of sub-micrometer size,J.Colloid Interface Sci.,364(2011)574-581)。
The joint study silver copper-clad nano wire of Canada Calgary university and University of Alberta, when silver content is 66.52wt%,
Silver copper-clad nano wire has good non-oxidizability, increases weight and be reduced to silver from without 20.3% during silver cladding after nano wire oxidation
3.2% (Luo, Silver-coated copper nanowires with improved anti-oxidation during cladding
property as conductive fillers in low-density polyethylene,The Canadian
Journal of Chemical Engineering,91(2013)630-637).The research of TaiWan, China Feng Chia University shows,
The non-oxidizability of flaky silver coated copper powder is better than ball-type silver-coated copper powder (Lin, Effects of oxidation and
particle shape on critical volume fractions of silver-coated copper powders
in conductive adhesives for microelectronic applications,Polymer Engineering&
Science,44(2004)2075-2082).Guangdong University of Technology's research worker confirms experimentally, when the content of silver is
During 10wt%, it is possible to uniform parcel copper granule, silver-coated copper powder now have good non-oxidizability (Cao,
Fabrication and performance of silver coated copper powder,Electronic
Materials Letters,8(2012)467-470).Further investigations have shown that, increase RE-608 high-efficiency copper extractant with anti-
Between Ying Shi, reduce the concentration of silver nitrate, when the content of silver is 6.86wt% in silver-coated copper powder, it becomes possible to make silver-coated copper powder simultaneously
There is good non-oxidizability (Cao, Preparation of silver-coated copper powder and its
oxidation resistance research,Powder Technology,226(2012)53-56).Guangdong elegance and talent is high-new
Silver-coated copper powder prepared by Science and Technology Co., Ltd. when silver content is 5wt%～18wt%, problem of oxidation can improve 40～
140 DEG C, have good non-oxidizability (Tang founding father, the preparation of silver-coated copper powder and performance thereof, electronic component and material, 28
(2009)66-66).But, the technology of preparing of silver-coated copper powder is complex, and the clad ratio of silver copper-clad granule is with being evenly coated property still
For the problem existed, although and this technology can suppress the oxidation of copper, but material cost is still higher than the slurry using copper powder
Material, can only be a kind of cambic electrocondution slurry technology.Japan's AIST institute uses low-temperature sintering technology process to the addition of low
The copper slurry of melting alloy granule, relative to high temperature sintering environment, low-temperature sintering inhibits oxidation (Yoshiba, the Cost-of copper
effective front contact metalization by copper paste for screen-printed
crystalline silicon solar cells,27th European Photovoltaic Solar Energy
Conference and Exhibition,(2012)1730-1732).Kunming Institute of Precious Metals selects alkali glass as nothing
Machine binding agent, in organic carrier add reducing agent, copper slurry can in atmosphere direct sintering (Tan Fubin sinters in atmosphere
Copper electrocondution slurry, noble metal, 13 (1992) 40-44).But, the reducing agent dosage added in organic carrier is too small, can not
Effectively stoping the oxidation of copper, and when additive capacity is excessive, can reduce again the content of copper powder accordingly, the window of Technology is less.
Northeastern Japan university uses reducing atmosphere to be sintered technique, it is possible to the copper oxide on gate line electrode is reduced to metallic copper,
Thus reduce the line resistance of gate line electrode.But, reducibility gas mostly is flammable explosive gas, is prevented effectively from the most technically
Gas leakage is still that significant problem to be solved.
Summary of the invention
It is an object of the invention to the shortcoming overcoming prior art to be difficult to solve the technical barrier of the oxidizable and easy diffusion of copper,
A kind of crystal silicon solar battery base metal front electrode and preparation method thereof is proposed.The present invention uses nickel slurry, copper slurry, aluminum stannum slurry to replace
Silver slurry, prepares nickel copper/aluminum stannum base metal combination electrode, both can solve the technical barrier of the oxidizable and easy diffusion of copper, also simultaneously
Cost of sizing agent can be greatly reduced.
For achieving the above object, crystal silicon solar battery front electrode of the present invention is base metal combination electrode, described compound electric
The bottom of pole is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminum tin electrode.
The present invention prepares crystal silicon solar battery base metal front electrode.Use nano-nickel powder, copper nanoparticle, nanometer aluminium powder,
Nanometer glass putty base metal granule replacement argentum powder, as conducting function phase, regulates and controls slurry bonding in conjunction with glass dust and organic carrier, touches
Degeneration, rheological characteristic performance, at the most preset nickel in crystal silicon solar battery front slurry, copper slurry and aluminum stannum slurry, prepare resistance after drying successively
Diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminum tin electrode, prepare nickel copper/aluminum stannum base metal multiple after low-temperature sintering
Composite electrode, substitutes noble silver electrode.Crystal silicon solar battery front electrode preparation cost prepared by the present invention is low, can realize efficiently
Rate industrialization.
The step of crystal silicon solar battery base metal front electrode of the present invention and preparation method thereof is as follows:
(1) use silk screen printing or pneumatic printing or ink jet printing method at the preset resistance in crystal silicon solar battery surface diffusion layer
Slurry nickel is starched；
(2) use the nickel slurry that the equipment baking steps (1) such as drying oven are preset on crystal silicon solar battery surface, prepare resistance diffusion
Layer electrode；
(3) the resistance diffusion layer electrode that silk screen printing or the method such as pneumatic printing or ink jet printing prepare is used in step (2)
Upper preset conductive layer slurry copper slurry；
(4) use the copper slurry that the equipment baking steps (3) such as drying oven are preset on resistance diffusion layer electrode, prepare conductive layer electricity
Pole；
(5) use silk screen printing or the method such as pneumatic printing or ink jet printing on the conducting layer electrode that step (4) prepares
Preset anti oxidation layer slurry aluminum stannum is starched；
(6) use the aluminum stannum slurry that the equipment baking steps (5) such as drying oven are preset on conducting layer electrode, prepare anti oxidation layer
Electrode；
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepares nickel copper/aluminum stannum base metal combination electrode.
Described nickel slurry by 85～95wt% the glass dust of nano-nickel powder, 1～5wt% and 4～14wt% have airborne
Body forms, and after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, filters after three-roll grinder grinds
Prepare.
The particle diameter of described nano-nickel powder is 500～800nm, and purity is more than 99%.
Described glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, 4wt%
B2O3Bi with 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on
Heating in 1400 DEG C of Muffle furnaces, after insulation 60min, quenching ball milling prepare.
Described organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl of 2wt%
The Polyethylene Glycol composition of cellulose, the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt% and 4wt%,
Butyl, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are pressed
Ratio mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
Described copper slurry by 85～95wt% the glass dust of copper nanoparticle, 1～5wt% and 4～14wt% have airborne
Body forms, and after uniform for copper nanoparticle, glass dust and organic carrier heated and stirred in proportion, filters after three-roll grinder grinds
Prepare.In described copper slurry, the particle diameter of copper nanoparticle is 500～800nm, and purity is more than 99%.
Described glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, 5wt%
B2O3Bi with 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on
Heating in 1400 DEG C of Muffle furnaces, after insulation 60min, quenching ball milling prepare.
Described organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl of 3wt%
The Polyethylene Glycol composition of cellulose, the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt% and 6wt%,
Butyl, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are pressed
Ratio mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
Described aluminum stannum starches the glass of nanometer glass putty, 1～the 5wt% of nanometer aluminium powder, 20～25wt% by 65～70wt%
Glass powder and the organic carrier composition of 4～14wt%.
The particle diameter of described nanometer aluminium powder is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%, after uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion,
Filter after three-roll grinder grinds and prepare.
Described glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, 4wt%
B2O3Bi with 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on
Heating in 1400 DEG C of Muffle furnaces, after insulation 60min, quenching ball milling prepare.
Described organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl of 2wt%
The Polyethylene Glycol composition of cellulose, the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt% and 4wt%,
Butyl, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are pressed
Ratio mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
In described step (2), step (4) and step (6), drying temperature range is 100～300 DEG C, and drying time is 1
～10min；In described step (7), peak firing temperature scope is 300～600 DEG C, and sintering time is 1～20min.
Beneficial effects of the present invention is embodied in:
(1) use nickel slurry, copper slurry, aluminum stannum to starch and replace silver slurry, preparation nickel copper/aluminum stannum base metal front combination electrode, simultaneously
Low cost, satisfactory electrical conductivity, low diffusibility and non-oxidizability can be realized.
(2) use nanometer resistance diffusion layer technology, use the bottom electrode of printing nano nickel slurry preparation as stoping copper atom
To the barrier layer of silicon emitter diffusion, nickel diffusion coefficient in silicon is about 2.4 × 10-15cm2/ s, much smaller than the diffusion system of copper
Number, it is possible to be prevented effectively from the diffusion problem of copper.
(3) using base metal anti oxidation layer technology, use aluminum stannum to starch as antioxidative electrocondution slurry, aluminium powder plays antioxidation
Effect, glass putty strengthens electrode welding effect, forms surface oxidation-resistant layer on copper electrode surface, it is possible to effectively solve copper conductive layer
Problem of oxidation.
(4) resistivity of nickel is 6.84 × 10-6Ω cm, aluminum is 2.83 × 10-8Ω cm, stannum is 1 × 10-7Ω m,
And nickel dam and aluminum tin layers are the most relatively thin, thickness is respectively less than 1 μm, electrode main component or copper.The resistivity of silver is 1.59 × 10-8
Ω m, and the resistivity of copper is the most slightly higher, is 1.75 × 10-8Ω·m.Therefore combination electrode resistivity is suitable with silver electrode.
The price of copper is about 45 yuan/kg, and the price of nickel is about 100 yuan/kg, and aluminum is about 20 yuan/kg, and stannum is about 150 yuan/kg, the lowest
Price in 4309 yuan/kg of silver, it is ensured that the cheap advantage of combination electrode.
(5) use resistance oxidation low-temperature sintering technology, reduce the oxidation of copper to reduce combination electrode by low-temperature sintering technology
Line resistance.
The present invention has many-sided advantage such as theoretical reasonability, industrial feasibility.First, nickel diffusion coefficient in silicon is about
It is 2.4 × 10-15cm2/ s, much smaller than the diffusion coefficient of copper, it is possible to be prevented effectively from the diffusion problem of similar copper.Secondly, the electricity of nickel
Resistance rate is 6.84 × 10-6Ω cm, aluminum is 2.83 × 10-8Ω cm, stannum is 1 × 10-7Ω m, and nickel dam and aluminum tin layers are all
Relatively thin, thickness is respectively less than 1 μm, electrode main component or copper, and the resistivity of copper is the most slightly higher, is 1.75 × 10-8Ω·
M, therefore combination electrode resistivity is still close with silver electrode.3rd, the price of copper is about 45 yuan/kg, and the price of nickel is about 100
Unit/kg, aluminum is about 20 yuan/kg, and stannum is about 150 yuan/kg, all far below the price of silver, it is ensured that the cheap advantage of combination electrode.
Scientific guidance can be provided for preparing the cheap efficient base metal slurry of alternative silver slurry by the research of the present invention.
With regard to application prospect aspect, the data of IEA and CPIA show, end the accumulative installation amount in the whole world in 2015 more than 200GW,
Just install 53GW in only 2015 whole world, domestic installation 15GW.Global solar module yield in 2015 is about 60GW, domestic about
For 43GW.In the solar cell technology of preparing of various industrialization, crystal silicon solar battery technology accounts for more than 90% share, and silver-colored
Slurry is the prime cost expenditure of crystal silicon solar battery, and market potential is huge.Single according to the most conventional crystal silicon battery efficiency and silver slurry
Consumption budgetary estimate, within 2015, whole world silver slurry consumption is about 1626 tons, domestic about 1165 tons.Even if it is it is to say, sudden and violent at whole world silver valency
2015 fallen, whole world silver slurry also consumed nearly 9,800,000,000 yuan, domestic consumption nearly 7,000,000,000 yuan.And along with photovoltaic market is recovered, brilliant
Silion cell yield cumulative year after year, staple commodities price stabilizes, and the following silver that will consume hundreds of hundred million for 1 year is starched.And if adopted
Use base metal slurry, it will greatly reduce electrocondution slurry cost.Do a simple measuring and calculating, it is assumed that base metal combination electrode with
Silver electrode has same shape, and nickel, copper, the volume ratio of aluminum stannum single-layer electrodes are 2:40:1, simultaneously except gold in base metal slurry
Metal particles other component prices outer are identical with silver slurry, then after silver slurry is by base metal slurry replacing whole of the present invention, and whole world crystal silicon
Solar cell slurry one be only about consumption 100,000,000 yuan, domestic about consumption 0.7 hundred million yuan, one of percentage before just corresponding to, greatly
Reduce production cost.If silver slurry is all replaced by base metal slurry of the present invention, the whole world announced according to CPIA and state's inner assembly
Global and the domestic cost-effective volume of base metal slurry of yield estimation, in 2016 years, whole world cost of sizing agent can cut down 10,500,000,000
Unit, domestic cost of sizing agent cuts down 8,000,000,000 yuan.Although the present invention program adds secondary printing operation, add certain equipment and throw
Entering, but produce daily as a example by the product line of 30000 by wall scroll, the slurry consumption of 1 year just can save 7,800,000 yuan, completely covers and sets
Standby input, the printing equipment still more increased can use for many years.
Accompanying drawing explanation
Fig. 1 nickel copper/aluminum stannum base metal combined electrode structure schematic diagram.
Detailed description of the invention
As it is shown in figure 1, crystal silicon solar battery front electrode of the present invention is base metal combination electrode, the end of described combination electrode
Layer is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti oxidation layer aluminum tin electrode.
Embodiment 1
(1) employing is screen printed onto the preset resistance in crystal silicon solar battery surface diffusion layer slurry: nickel is starched；
Resistance diffusion layer slurry nickel is starched by the nano-nickel powder of 85wt%, the glass dust of 1wt% and the organic carrier group of 14wt%
Become, after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, after three-roll grinder grinds, filter system
?；
The particle diameter of the nano-nickel powder in slurry is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by two
Butyl glycol ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are in proportion
Mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
(2) use the nickel slurry that drying oven baking step (1) is preset, prepare resistance diffusion layer electrode.Drying temperature is 100 DEG C,
Drying time is 10min.
(3) employing is screen printed onto preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2): copper is starched；Conduction
Layer slurry copper slurry be made up of the organic carrier of the copper nanoparticle of 85wt%, the glass dust of 1wt% and 14wt%, by copper nanoparticle,
After glass dust and organic carrier heated and stirred in proportion is uniform, filters after three-roll grinder grinds and prepare；
The particle diameter of the copper nanoparticle in slurry is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, the B of 5wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt%, 6wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(4) use the copper slurry that drying oven baking step (3) is preset, prepare conducting layer electrode.Drying temperature is 100 DEG C, dries
The dry time is 10min.
(5) employing is screen printed onto preset anti oxidation layer slurry on conducting layer electrode prepared by step (4): aluminum stannum is starched；
Anti oxidation layer slurry aluminum stannum slurry by the nanometer aluminium powder of 65wt%, the nanometer glass putty of 20wt%, the glass dust of 1wt% and
The organic carrier composition of 14wt%, by uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion
After, filter after three-roll grinder grinds and prepare；
The particle diameter of the nanometer aluminium powder in slurry is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%；
Glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset, prepare anti oxidation layer electrode.Drying temperature is 100
DEG C, drying time is 10min.
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepared nickel copper/aluminum stannum base metal combination electrode.Peak firing temperature is
300 DEG C, sintering time is 20min.
Embodiment 2
(1) use pneumatic printing at the preset resistance in crystal silicon solar battery surface diffusion layer slurry: nickel is starched；
Resistance diffusion layer slurry nickel is starched by the nano-nickel powder of 85wt%, the glass dust of 5wt% and the organic carrier group of 10wt%
Become, after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, after three-roll grinder grinds, filter system
?；
In slurry, the particle diameter of nano-nickel powder is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(2) use the nickel slurry that drying oven baking step (1) is preset, prepare resistance diffusion layer electrode.Drying temperature is 200 DEG C,
Drying time is 5min.
(3) pneumatic printing preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2) is used: copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of the copper nanoparticle of 85wt%, the glass dust of 5wt% and 10wt%,
After uniform for copper nanoparticle, glass dust and organic carrier heated and stirred in proportion, filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of copper nanoparticle is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, the B of 5wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt%, 6wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(4) use the copper slurry that drying oven baking step (3) is preset, prepare conducting layer electrode.Drying temperature is 200 DEG C, dries
The dry time is 5min.
(5) pneumatic printing preset anti oxidation layer slurry on conducting layer electrode prepared by step (4) is used: aluminum stannum is starched；
Anti oxidation layer slurry aluminum stannum slurry by the nanometer aluminium powder of 65wt%, the nanometer glass putty of 20wt%, the glass dust of 5wt% and
The organic carrier composition of 10wt%, by uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion
After, filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of nanometer aluminium powder is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%；
Glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset, prepare anti oxidation layer electrode.Drying temperature is 200
DEG C, drying time is 5min.
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepared nickel copper/aluminum stannum base metal combination electrode.Peak firing temperature is
400 DEG C, sintering time is 15min.
Embodiment 3
(1) use ink jet printing at the preset resistance in crystal silicon solar battery surface diffusion layer slurry: nickel is starched；
Resistance diffusion layer slurry nickel is starched by the nano-nickel powder of 89wt%, the glass dust of 1wt% and the organic carrier group of 10wt%
Become, after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, after three-roll grinder grinds, filter system
?；
In slurry, the particle diameter of nano-nickel powder is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(2) use the nickel slurry that drying oven baking step (1) is preset, prepare resistance diffusion layer electrode.Drying temperature is 300 DEG C,
Drying time is 1min.
(3) ink jet printing preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2) is used: copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of the copper nanoparticle of 89wt%, the glass dust of 1wt% and 10wt%,
After uniform for copper nanoparticle, glass dust and organic carrier heated and stirred in proportion, filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of copper nanoparticle is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, the B of 5wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt%, 6wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(4) use the copper slurry that drying oven baking step (3) is preset, prepare conducting layer electrode.Drying temperature is 300 DEG C, dries
The dry time is 1min.
(5) ink jet printing preset anti oxidation layer slurry on conducting layer electrode prepared by step (4) is used: aluminum stannum is starched；Anti-
Oxide layer slurry aluminum stannum slurry having by nanometer aluminium powder, the nanometer glass putty of 24wt%, the glass dust of 1wt% and the 10wt% of 65wt%
Airborne body forms, and after uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion, grinds through three rollers
Grinding machine filters after grinding and prepares；
In slurry, the particle diameter of nanometer aluminium powder is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%；
Glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset, prepare anti oxidation layer electrode.Drying temperature is 300
DEG C, drying time is 1min.
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepared nickel copper/aluminum stannum base metal combination electrode.Peak firing temperature is
500 DEG C, sintering time is 5min.
Embodiment 4
(1) employing is screen printed onto the preset resistance in crystal silicon solar battery surface diffusion layer slurry: nickel is starched；
Resistance diffusion layer slurry nickel is starched by the nano-nickel powder of 95wt%, the glass dust of 1wt% and the organic carrier group of 4wt%
Become, after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, after three-roll grinder grinds, filter system
?；
In slurry, the particle diameter of nano-nickel powder is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(2) use the nickel slurry that drying oven baking step (1) is preset, prepare resistance diffusion layer electrode.Drying temperature is 150 DEG C,
Drying time is 8min.
(3) employing is screen printed onto preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2): copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of the copper nanoparticle of 95wt%, the glass dust of 1wt% and 4wt%,
After uniform for copper nanoparticle, glass dust and organic carrier heated and stirred in proportion, filter after three-roll grinder grinds and prepare；Slurry
In material, the particle diameter of copper nanoparticle is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, the B of 5wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt%, 6wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(4) use the copper slurry that drying oven baking step (3) is preset, prepare conducting layer electrode.Drying temperature is 150 DEG C, dries
The dry time is 8min.
(5) employing is screen printed onto preset anti oxidation layer slurry on conducting layer electrode prepared by step (4): aluminum stannum is starched；
Anti oxidation layer slurry aluminum stannum slurry by the nanometer aluminium powder of 70wt%, the nanometer glass putty of 25wt%, the glass dust of 1wt% and
The organic carrier composition of 4wt%, by uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion
After, filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of nanometer aluminium powder is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%；
Glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset, prepare anti oxidation layer electrode.Drying temperature is 150
DEG C, drying time is 8min.
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepared nickel copper/aluminum stannum base metal combination electrode.Peak firing temperature is
600 DEG C, sintering time is 1min.
Embodiment 5
(1) employing is screen printed onto the preset resistance in crystal silicon solar battery surface diffusion layer slurry: nickel is starched；
Resistance diffusion layer slurry nickel is starched by the nano-nickel powder of 90wt%, the glass dust of 2wt% and the organic carrier group of 8wt%
Become, after uniform for nano-nickel powder, glass dust and organic carrier heated and stirred in proportion, after three-roll grinder grinds, filter system
?；
In slurry, the particle diameter of nano-nickel powder is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 25wt% of 45wt%2, the SiO of 17wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 3wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(2) use the nickel slurry that drying oven baking step (1) is preset, prepare resistance diffusion layer electrode.Drying temperature is 250 DEG C,
Drying time is 3min.
(3) employing is screen printed onto preset conductive layer slurry on resistance diffusion layer electrode prepared by step (2): copper is starched；
Conductive layer slurry copper slurry is made up of the organic carrier of the copper nanoparticle of 90wt%, the glass dust of 2wt% and 8wt%,
After uniform for copper nanoparticle, glass dust and organic carrier heated and stirred in proportion, filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of copper nanoparticle is 500～800nm, and purity is more than 99%；
Glass dust is by the TeO of PbO, 20wt% of 50wt%2, the SiO of 15wt%2, the A1 of 5wt%2O3, the B of 5wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt%, 6wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(4) use the copper slurry that drying oven baking step (3) is preset, prepare conducting layer electrode.Drying temperature is 250 DEG C, dries
The dry time is 3min.
(5) employing is screen printed onto preset anti oxidation layer slurry on conducting layer electrode prepared by step (4): aluminum stannum is starched；
Anti oxidation layer slurry aluminum stannum slurry by the nanometer aluminium powder of 68wt%, the nanometer glass putty of 22wt%, the glass dust of 2wt% and
The organic carrier composition of 8wt%, after uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion,
Filter after three-roll grinder grinds and prepare；
In slurry, the particle diameter of nanometer aluminium powder is 500～800nm, and purity is more than 99%；The particle diameter of nanometer glass putty be 500～
800nm, purity is more than 99%；
Glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the A1 of 6wt%2O3, the B of 4wt%2O3、
The Bi of 5wt%2O3Composition, by PbO, TeO2、SiO2、A12O3、B2O3And Bi2O3Mix in proportion and be placed on 1400 DEG C of Muffles
Heating in stove, after insulation 60min, quenching ball milling prepare；
Organic carrier is by the butyl of 65wt%, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%
Element, the Polyethylene Glycol composition of the polyamide wax of 8wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt%, 4wt%, by diethyl
Glycol butyl ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion
Close and be uniformly placed in 80 DEG C of thermostatic containers, stir 5 hours and prepare.
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset, prepare anti oxidation layer electrode.Drying temperature is 250
DEG C, drying time is 3min.
(7) conductive layer that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode that electrode and step (6) prepare, prepared nickel copper/aluminum stannum base metal combination electrode.Peak firing temperature is
450 DEG C, sintering time is 10min.
Performance test example
Use 156 × 156mm2Polysilicon chip, embodiment 1～5 preparation the battery corresponding to base metal combination electrode
Performance, at AM 1.5G, 100mW/cm2, under conditions of 25 DEG C, use the test of I-V tester, result is as shown in table l.
Table 1 embodiment battery performance
| The present invention | Open-circuit voltage (V) | Short circuit current (A) | Fill factor, curve factor (%) | Electricity conversion (%) |
| Embodiment 1 | 0.622 | 8.88 | 78.01 | 17.72 |
| Embodiment 2 | 0.623 | 8.84 | 78.09 | 17.68 |
| Embodiment 3 | 0.625 | 8.86 | 78.01 | 17.77 |
| Embodiment 4 | 0.627 | 8.86 | 77.84 | 17.79 |
| Embodiment 5 | 0.628 | 8.84 | 78.16 | 17.83 |
Claims (10)
1. a crystal silicon solar battery base metal front electrode, it is characterised in that: described crystal silicon solar battery front electrode is
Base metal combination electrode, the bottom of described combination electrode is resistance diffusion layer nickel electrode, and middle level is conductive layer copper electrode, and top layer is anti-
Oxide layer aluminum tin electrode.
2. the method for preparation crystal silicon solar battery base metal front electrode described in claim 1, it is characterised in that: use nanometer
Nikel powder, copper nanoparticle, nanometer aluminium powder, nanometer glass putty base metal granule substitute argentum powder as conducting function phase, in conjunction with glass dust and
Organic carrier regulation and control slurry bonding, thixotropy, rheological characteristic performance, the most preset nickel in crystal silicon solar battery front slurry, copper starch and
Aluminum stannum is starched, and prepares resistance diffusion layer nickel electrode, conductive layer copper electrode and anti oxidation layer aluminum tin electrode, after low-temperature sintering after drying successively
Prepare nickel copper/aluminum stannum base metal combination electrode, substitute noble silver electrode.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 2, it is characterised in that: described
Preparation method step as follows:
(1) silk screen printing or pneumatic printing or ink jet printing method is used to starch at the preset resistance in crystal silicon solar battery surface diffusion layer
Material nickel slurry；
(2) use the nickel slurry that drying oven baking step (1) is preset on crystal silicon solar battery surface, prepare resistance diffusion layer electrode；
(3) use silk screen printing or pneumatic printing or ink jet printing method preset on the resistance diffusion layer electrode that step (2) prepares
Conductive layer slurry copper is starched；
(4) use the copper slurry that drying oven baking step (3) is preset on resistance diffusion layer electrode, prepare conducting layer electrode；
(5) use silk screen printing or pneumatic printing or ink jet printing method preset anti-on the conducting layer electrode that step (4) prepares
Oxide layer slurry aluminum stannum is starched；
(6) use the aluminum stannum slurry that drying oven baking step (5) is preset on conducting layer electrode, prepare anti oxidation layer electrode；
(7) conducting layer electrode that the sintering furnace resistance diffusion layer electrode that heat treatment step (2) prepares simultaneously, step (4) prepare is used
The anti oxidation layer electrode prepared with step (6), prepares nickel copper/aluminum stannum base metal combination electrode.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 3, it is characterised in that: described
Nickel slurry be made up of, by nanometer the glass dust of nano-nickel powder, 1～5wt% and the organic carrier of 4～14wt% of 85～95wt%
After nikel powder, glass dust and organic carrier heated and stirred in proportion is uniform, filters after three-roll grinder grinds and prepare.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 4, it is characterised in that: described
The particle diameter of nano-nickel powder be 500～800nm, purity is more than 99%；Described glass dust is by PbO, 25wt% of 45wt%
TeO2, the SiO of 17wt%2, the Al of 6wt%2O3, the B of 4wt%2O3Bi with 3wt%2O3Composition, by PbO, TeO2、SiO2、
Al2O3、B2O3And Bi2O3Mix in proportion and be placed in 1400 DEG C of Muffle furnaces heating, quenching ball milling system after insulation 60min
?；Described organic carrier is by the butyl of 62wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 2wt%
The Polyethylene Glycol composition of element, the polyamide wax of 6wt%, the lecithin of 6wt%, the tributyl phosphate of 5wt% and 4wt%, by two
Butyl glycol ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are in proportion
Mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 3, it is characterised in that: described
Copper slurry be made up of, by nanometer the glass dust of copper nanoparticle, 1～5wt% and the organic carrier of 4～14wt% of 85～95wt%
After copper powder, glass dust and organic carrier heated and stirred in proportion is uniform, filters after three-roll grinder grinds and prepare.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 6, it is characterised in that: described
The particle diameter of copper nanoparticle be 500～800nm, purity is more than 99%；Described glass dust is by PbO, 20wt% of 50wt%
TeO2, the SiO of 15wt%2, the Al of 5wt%2O3, the B of 5wt%2O3Bi with 5wt%2O3Composition, by PbO, TeO2、SiO2、
Al2O3、B2O3And Bi2O3Mix in proportion and be placed in 1400 DEG C of Muffle furnaces heating, quenching ball milling system after insulation 60min
?；Described organic carrier is by the butyl of 60wt%, the tributyl citrate of 15wt%, the ethyl cellulose of 3wt%
The Polyethylene Glycol composition of element, the polyamide wax of 6wt%, the lecithin of 5wt%, the tributyl phosphate of 5wt% and 6wt%, by two
Butyl glycol ether, tributyl citrate, ethyl cellulose, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol are in proportion
Mix homogeneously is placed in 80 DEG C of thermostatic containers, stirs 5 hours and prepares.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 3, it is characterised in that: described
Aluminum stannum slurry by 65～70wt% the glass dust of nanometer glass putty, 1～5wt% of nanometer aluminium powder, 20～25wt% and 4～
The organic carrier composition of 14wt%, by uniform to nanometer aluminium powder, nanometer glass putty, glass dust and organic carrier heated and stirred in proportion
After, filter after three-roll grinder grinds and prepare.
Method prepared by crystal silicon solar battery base metal front electrode the most according to claim 8, it is characterised in that: described
The particle diameter of nanometer aluminium powder be 500～800nm, purity is more than 99%；The particle diameter of described nanometer glass putty is 500～800nm, pure
Degree is more than 99%；Described glass dust is by the TeO of PbO, 30wt% of 40wt%2, the SiO of 15wt%2, the Al of 6wt%2O3、
The B of 4wt%2O3Bi with 5wt%2O3Composition, by PbO, TeO2、SiO2、Al2O3、B2O3And Bi2O3Mix in proportion rearmounted
Heating in 1400 DEG C of Muffle furnaces, after insulation 60min, quenching ball milling prepare；Described organic carrier is by the diethyl two of 65wt%
Alcohol butyl ether, the tributyl citrate of 10wt%, the ethyl cellulose of 2wt%, the polyamide wax of 8wt%, the lecithin of 6wt%,
The tributyl phosphate of 5wt% and the Polyethylene Glycol composition of 4wt%, by butyl, tributyl citrate, ethyl cellulose
Element, polyamide wax, lecithin, tributyl phosphate and Polyethylene Glycol mix in proportion and are placed in 80 DEG C of thermostatic containers, stir
Mix 5 hours and prepare.
Crystal silicon solar battery base metal front electrode the most according to claim 3 and the method for preparation thereof, its feature exists
In: in described step (2), step (4) and step (6), dry temperature range be 100～300 DEG C, drying time be 1～
10min；In described step (7), peak firing temperature scope is 300～600 DEG C, and sintering time is 1～20min.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109265157A (en) * | 2018-10-29 | 2019-01-25 | 惠州嘉科实业有限公司 | Low-resistance NTC thermistor and preparation method thereof |
| CN114156368A (en) * | 2021-11-29 | 2022-03-08 | 常州时创能源股份有限公司 | Preparation method of electrode of photovoltaic cell |
| CN114604013A (en) * | 2022-02-10 | 2022-06-10 | 四川旭虹光电科技有限公司 | Display substrate with photosensitivity and conductivity |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546684A (en) * | 2009-04-30 | 2009-09-30 | 福州大学 | Anti-oxidation composite membrane electrode |
| CN101880792A (en) * | 2010-06-07 | 2010-11-10 | 深圳市亿铖达工业有限公司 | Anti-corrosive anti-oxidation Pb-free solder alloy for aluminum soldering |
| CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
| CN102077301A (en) * | 2008-06-25 | 2011-05-25 | Sscp有限公司 | Conductive paste composition and method of preparing electrode using the same |
| US20110300664A1 (en) * | 2010-06-08 | 2011-12-08 | Kevin Kwong-Tai Chung | Solar cell interconnection, module and panel method |
| CN103726088A (en) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | Improved copper electroplating method of crystal silicon solar battery |
| CN104751937A (en) * | 2013-12-27 | 2015-07-01 | 比亚迪股份有限公司 | Aluminum conductive paste for solar cell and preparation method thereof |
| CN104752528A (en) * | 2013-12-27 | 2015-07-01 | 比亚迪股份有限公司 | Solar cell, preparation method thereof, and solar cell module comprising solar cell |
| CN105655009A (en) * | 2016-03-22 | 2016-06-08 | 广西吉宽太阳能设备有限公司 | Silver slurry for crystalline silicon solar cell |
| CN105679410A (en) * | 2016-04-26 | 2016-06-15 | 江阴市天邦涂料股份有限公司 | High-adhesion-stability silver-aluminum slurry for solar battery |
-
2016
- 2016-08-10 CN CN201610649477.1A patent/CN106098808B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077301A (en) * | 2008-06-25 | 2011-05-25 | Sscp有限公司 | Conductive paste composition and method of preparing electrode using the same |
| CN101546684A (en) * | 2009-04-30 | 2009-09-30 | 福州大学 | Anti-oxidation composite membrane electrode |
| CN101880792A (en) * | 2010-06-07 | 2010-11-10 | 深圳市亿铖达工业有限公司 | Anti-corrosive anti-oxidation Pb-free solder alloy for aluminum soldering |
| US20110300664A1 (en) * | 2010-06-08 | 2011-12-08 | Kevin Kwong-Tai Chung | Solar cell interconnection, module and panel method |
| CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
| CN103726088A (en) * | 2013-12-25 | 2014-04-16 | 国电新能源技术研究院 | Improved copper electroplating method of crystal silicon solar battery |
| CN104751937A (en) * | 2013-12-27 | 2015-07-01 | 比亚迪股份有限公司 | Aluminum conductive paste for solar cell and preparation method thereof |
| CN104752528A (en) * | 2013-12-27 | 2015-07-01 | 比亚迪股份有限公司 | Solar cell, preparation method thereof, and solar cell module comprising solar cell |
| CN105655009A (en) * | 2016-03-22 | 2016-06-08 | 广西吉宽太阳能设备有限公司 | Silver slurry for crystalline silicon solar cell |
| CN105679410A (en) * | 2016-04-26 | 2016-06-15 | 江阴市天邦涂料股份有限公司 | High-adhesion-stability silver-aluminum slurry for solar battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109265157A (en) * | 2018-10-29 | 2019-01-25 | 惠州嘉科实业有限公司 | Low-resistance NTC thermistor and preparation method thereof |
| CN114156368A (en) * | 2021-11-29 | 2022-03-08 | 常州时创能源股份有限公司 | Preparation method of electrode of photovoltaic cell |
| CN114604013A (en) * | 2022-02-10 | 2022-06-10 | 四川旭虹光电科技有限公司 | Display substrate with photosensitivity and conductivity |
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|---|---|
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