CN105683319A - Semiconductor bonding adhesive sheet and semiconductor device manufacturing method - Google Patents

Semiconductor bonding adhesive sheet and semiconductor device manufacturing method Download PDF

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Publication number
CN105683319A
CN105683319A CN201480059393.1A CN201480059393A CN105683319A CN 105683319 A CN105683319 A CN 105683319A CN 201480059393 A CN201480059393 A CN 201480059393A CN 105683319 A CN105683319 A CN 105683319A
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China
Prior art keywords
layer
methyl
adhesive sheet
acrylate
semiconductor
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Inventor
根津裕介
加太章生
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Lintec Corp
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Lintec Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides a semiconductor bonding adhesive sheet in which a protruding electrode such as a bump electrode can be embedded, thereby achieving excellent backside grinding properties. This semiconductor bonding adhesive sheet is formed by laminating a base material, an uneven absorption layer, a pressure-sensitive adhesive layer, and an adhesive layer, in that order. The pressure-sensitive adhesive layer comprises a cured product of an energy ray-curable pressure-sensitive adhesive composition, and the adhesive layer is formed on top of the pressure-sensitive adhesive layer so as to be peelable.

Description

Semiconductor interface share the manufacture method of adhesive sheet and semiconductor device
Technical field
The present invention relates to a kind of being particularly well-suited to brilliant for Silicon Wafer etc. the preparation method of semiconductor device cut and share by semiconductor interface that bonding for the semiconductor chip obtained (glutinous crystalline substance) uses in the operation of organic substrate or lead frame or other semiconductor chips adhesive sheet and use this adhesive sheet.
Background technology
The semiconductor crystal wafers such as silicon, gallium arsenic manufacture with major diameter state, and this wafer is after cut-off separation (crystalline substance cuts) becomes element die (semiconductor chip), by the viscous brilliant operation of migration subsequent processing. Now, semiconductor crystal wafer can be thinned because of back side grinding operation, then, cuts via crystalline substance, cleans, dries, extends, after every operation such as pickup, then by the transfer welding sequence toward subsequent processing.
In welding sequence, when semiconductor chip is installed on printed circuit board (PCB), there is employing, coupling of the circuit face side of semiconductor chip, pad parts forms the conducting thrust (salient pole) being made up of eutectic solder, high-temperature solder, gold etc., recycling so-called " upside down (face-down) ", make these salient poles be contacted with portion of terminal corresponding on chip carrying substrate face-to-face, and melt/spread the crystal-covering mounting method of joint. If this kind of installation method uses in recent years universal common name " bare chip coherent film (DieAttachmentFilm) ", the wafer being pasted on wafer state is implemented singualtion and obtained chip, use when viscous crystalline substance and give bonding adhesive film for by chip with chip carrying substrate, relatively simple compared under the wafer be adhered on substrate material of other forms of use.
As the lamination sheets that such use uses, lamination sheets disclosed in patent documentation 1, wherein, having the tape of the composition forming adhering agent layer on base material and be arranged on the resin composition layer on the above-mentioned adhering agent layer of above-mentioned tape, above-mentioned adhering agent layer is radiation-curing type adhering agent layer. In the lamination sheets of patent documentation 1, resin composition layer has the function of above-mentioned adhesive film.
But, the lamination sheets of patent documentation 1, it is impossible to salient pole is fully buried in this lamination sheets, if implementing the back side grinding of wafer, will cause that pothole (concave point) occurs in grinding face.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2013-123002 publication
Summary of the invention
The technical problem to be solved in the present invention
Therefore, present invention aim at providing a kind of semiconductor interface to share adhesive sheet, it can bury the overshooting shape electrodes such as salient pole, its result, and back side grinding is excellent. Additionally, present invention aim at providing a kind of semiconductor interface to share adhesive sheet, it is excellent with the fissility of the interface of adhesive film (bond layer) at adhering agent layer.
Solve the technological means of technical problem
Solve the present invention of above-mentioned technical problem, include following purport.
[1] a kind of semiconductor interface share adhesive sheet, and it is stacked gradually formed by base material, concavo-convex absorbed layer, adhering agent layer and bond layer, wherein,
Adhering agent layer is made up of the solidfied material of energy-line solidifying type adhesion agent composition,
Bond layer is strippingly formed on adhering agent layer.
[2] semiconductor interface as described in [1] share adhesive sheet, and wherein, the tan δ of the concavo-convex absorbed layer at 70 DEG C is more than 0.5.
[3] semiconductor interface as described in [1] or [2] share adhesive sheet, and wherein, this adhesive sheet is pasted on the surface that surface is formed with the semiconductor crystal wafer of overshooting shape electrode,
The thickness of bond layer is less than the height of overshooting shape electrode.
[4] semiconductor interface as according to any one of [1]～[3] share adhesive sheet, and wherein, concavo-convex absorbed layer is made up of solidfied material or the ethene-alpha-olefin copolymer of the solidification compound containing amine ester polymer.
[5] manufacture method of a kind of semiconductor device, its semiconductor interface according to any one of use above-mentioned [1]～[4] share the manufacture method of the semiconductor device of adhesive sheet, comprising:
Wafer is pasted the operation that semiconductor interface share the bond layer of adhesive sheet, and wafer rear is implemented the operation of grinding.
Invention effect
The semiconductor interface of the present invention share adhesive sheet and is applicable to crystal-covering mounting method, can be buried in this adhesive sheet by concavo-convex (such as the overshooting shape electrode) of the circuit formed on semiconductor wafer surface. Therefore, the back side grinding of semiconductor crystal wafer can be implemented well. Additionally, the semiconductor interface of the present invention share the fissility excellence of the adhering agent layer of adhesive sheet and the interface of bond layer.
Accompanying drawing explanation
Fig. 1 represents the figure that the semiconductor interface that the present invention the 1st is constituted share adhesive sheet;
Fig. 2 represents the figure that the semiconductor interface that the present invention the 2nd is constituted share adhesive sheet.
Detailed description of the invention
Hereinafter, share adhesive sheet for the semiconductor interface of the present invention to be further specifically described. As shown in Figures 1 and 2, the semiconductor interface of the present invention share adhesive sheet 10 and is stacked gradually formed by base material 1, concavo-convex absorbed layer 2, adhering agent layer 3 and bond layer 4.
(base material)
Base material is not particularly limited, and can use such as: the films such as polyethylene film, polypropylene screen, polybutene film, polybutadiene film, polymethylpentene film, polychloroethylene film, vinyl chloride copolymer film, polyethylene terephthalate film, poly (ethylene naphthalate) film, polybutylene terephthalate (PBT) film, ethylene-vinyl acetate copolymer film, ionomeric resins film, ethylene (methyl) acrylic copolymer film, ethylene-(methyl) acrylate copolymer film, polystyrene film, polycarbonate membrane, polyimide film, fluororesin film. Additionally, it be also possible to use their cross linking membrane. Additionally, can be also their stacked film. Additionally, it be also possible to use the film etc. that they are painted.
The thickness of base material is not particularly limited, it is preferred to 20～300 μm, be more preferably 60～150 μm. By being set in above-mentioned scope by the thickness of base material, semiconductor interface share adhesive sheet and just has a sufficient pliability, thus is good stickup to workpiece such as semiconductor crystal wafers.
Additionally, on the face that base material adjoins concavo-convex absorbed layer, for the wettability for the compositions (concavo-convex absorbed layer compositions) forming concavo-convex absorbed layer can be improved, sided corona treatment can be implemented or arranges prime coat.Prime coat can be the layer being made up of bonding agent. The thickness of prime coat is not particularly limited.
This kind of bonding agent is not particularly limited, and can use existing widely used bonding agent, for instance: the bonding agents such as acrylic compounds, rubber-like, silicone; Thermoplasticity or the Thermocurable bonding agents such as polyesters, polyamide-based, ethylene copolymer class, epoxies, amine esters; Ultraviolet hardening bonding agent, the electronic beam solidified bonding agents such as acrylic compounds, amine esters.
(concavo-convex absorbed layer)
The semiconductor interface of the present invention share adhesive sheet by being provided with concavo-convex absorbed layer, can concavo-convex the burying of circuit formed on semiconductor wafer surface be share in adhesive sheet in semiconductor interface. Namely, when the semiconductor interface of the present invention being share adhesive sheet and being pasted on semiconductor crystal wafer (particularly there is the semiconductor crystal wafer forming overshooting shape electrode on the surface) surface that surface is provided with circuit, the tracing ability that circuit is concavo-convex is excellent, can be absorbed in this adhesive sheet by the concavo-convex of circuit. Therefore, when implementing the back side grinding of wafer, can really prevent the grinding water etc. of the circuit face to wafer from invading, and on grinding face, not be easily formed pothole (concave point). If grinding face produces concave point, then semiconductor crystal wafer, maybe this wafer is implemented singualtion and the semiconductor chip that obtains is easily damaged, cause that the semiconductor device reliability assembling it reduces. As long as concavo-convex absorbed layer can follow formed on adherend surface concavo-convex, then limit without special.
In this concavo-convex absorbed layer, the tan δ (loss just connects) of the concavo-convex absorbed layer at 70 DEG C is preferably more than 0.5, is more preferably more than 1, more preferably more than 1.3. The upper limit is not particularly limited, and is generally about 5, it is preferred to less than 4.
The semiconductor interface of the present invention being provided with concavo-convex absorbed layer share adhesive sheet, when being pasted on semiconductor die bowlder in the manufacturing process of semiconductor device, heated in the scope of about 50～110 DEG C. By the tan δ of the concavo-convex absorbed layer at 70 DEG C is set in above-mentioned scope, then concavo-convex absorbed layer meeting liquidation in the manufacturing process of above-mentioned semiconductor device, easily deform according to the concavo-convex of circuit, even if thus the circuit height of concave convex (height of overshooting shape electrode) formed on semiconductor wafer surface more than the thickness of aftermentioned bond layer, still can easily concavo-convex the burying of circuit be share in adhesive sheet in semiconductor interface.
Therefore, wafer thickness and precision after grinding is high, even and if grinding to wafer thickness below 100 μm, be prevented from wafer and be full of cracks occur.
It addition, the tan δ of the concavo-convex absorbed layer at 70 DEG C can improve the selection of composition and when using state of cure during solidfied material to be controlled.
Concavo-convex absorbed layer is such as formed by existing known various stickers and just can obtain. This kind of sticker there is no any restriction, can use the stickers such as such as rubber-like, acrylic compounds, silicone, polyvinylether. Additionally, be used as energy-line solidifying type, thermal expansion type, water swelling type sticker.
Additionally, concavo-convex absorbed layer can use the solidfied material of the solidification compound containing amine ester copolymer or ethene-alpha-olefin copolymer to be formed. If being constituted concavo-convex absorbed layer by the solidfied material of the solidification compound containing amine ester polymer or ethene-alpha-olefin copolymer, can easily the tan δ of concavo-convex absorbed layer be adjusted in above-mentioned scope.
As the solidification compound containing amine ester polymer, specifically can enumerate: the additive containing amine ester polymer and polyvinyls, the additive etc. containing urethane (methyl) acrylate oligomer.By solidifying these additives, the concavo-convex absorbed layer of the present invention just can be obtained.
In the additive containing amine ester polymer and polyvinyls, additive containing urethane (methyl) acrylate oligomer, it is preferable that add Photoepolymerizationinitiater initiater. As urethane (methyl) acrylate oligomer; can being set forth on terminal hydroxyl or the terminal isocyanate group of the urethane oligomer being carried out being polymerized with polyisocyanate compounds by the polyol compound with polyester backbone, polyether skeleton, polycarbonate backbone etc. and obtain, addition has the oligomer of the compound of (methyl) acryloyl group.
In the additive containing urethane (methyl) acrylate oligomer; the low-molecular-weight compound with reactive double bond base can be added; as the reactive double bond base that this compounds has, (methyl) acryloyl group, vinyl can be listed. By adding this kind of low-molecular-weight compound with reactive double bond base, the decrease in viscosity of additive containing urethane (methyl) acrylate oligomer can be made, the coating adaptive of additive when utilizing additive coating and obtain concavo-convex absorbed layer can be improved. In addition; the low-molecular-weight compound with reactive double bond base is after the additive containing urethane (methyl) acrylate oligomer solidifies; between (methyl) acryloyl group polymerization to each other of urethane (methyl) acrylate, there is the effect at the mesh interval that can expand three-dimensional mesh structure.
As the low-molecular-weight compound with reactive double bond base, for instance (methyl) acrylate of the alkyl with carbon number 1～30 can be enumerated; There is (methyl) acrylate of the functional groups such as hydroxyl, amide groups, amido, epoxy radicals; (methyl) acrylate of tool ester ring type structure; There is (methyl) acrylate of aromatic structure; (methyl) acrylate of tool hetero ring type structure; Vinyl compounds such as styrene, hydroxyethyl vinyl ether, hydroxyl butyl vinyl ether, N-vinyl formamide, N-vinyl pyrrole pyridine ketone, N-caprolactam etc.
(methyl) acrylate as the alkyl with carbon number 1～30, except illustrated in acrylate copolymer described later (A1), also can list (methyl) acrylic acid nonadecyl ester, (methyl) acrylic acid eicosyl ester, (methyl) acrylic acid pentacosyl ester, (methyl) acrylic acid melissyl ester etc.
As having hydroxyl, amido, (methyl) acrylate of epoxy radicals, material illustrated in aftermentioned acrylate copolymer (A1) can be listed, as (methyl) acrylate with amide groups, (methyl) acrylic acid amides can be listed, double, two (methyl) acrylic acid amides of ethylene, dimethyl (methyl) acrylamide, dimethylamine propyl (methyl) acrylamide, isopropyl (methyl) acrylamide, diethyl (methyl) acrylamide, ethoxy (methyl) acrylamide, (methyl) acryloyl group morpholine etc.
As (methyl) acrylate with ester ring type structure, for instance (methyl) isobornyl acrylate, (methyl) acrylic acid dicyclopentenyl ester, (methyl) acrylic acid bicyclo-pentyl ester, (methyl) acrylic acid dicyclo amylene oxygen ester, (methyl) cyclohexyl acrylate, (methyl) acrylic acid adamantane esters etc. can be enumerated.
As (methyl) acrylate with aromatic structure, for instance (methyl) phenylethyl hydroxypropyl acrylate, (methyl) benzyl acrylate, (methyl) acrylic acid-2-hydroxyl-3-phenoxy-propyl etc. can be enumerated.
As (methyl) acrylate with hetero ring type structure, for instance (methyl) tetrahydrofurfuryl acrylate, (methyl) acryloyl group morpholine etc. can be enumerated.
In addition, the energy-line solidifying type compositions containing urethane acrylate class oligomer disclosed in the additive containing urethane (methyl) acrylate oligomer, Japanese Patent Laid-Open 2011-068727 publication and the compound that has mercapto in molecule can be made to solidify, as concavo-convex absorbed layer. By using this kind of additive, can more easily the tan δ (loss just connects) of the concavo-convex absorbed layer at 70 DEG C be adjusted in above-mentioned scope.
Ethene-alpha-olefin copolymer can obtain by carrying out being polymerized with 'alpha '-olefin monomers by ethylene. As 'alpha '-olefin monomers, can enumerate ethylene, propylene, 1-butylene, 2-methyl-1-butene alkene, 2-Methyl-1-pentene, 1-hexene, 2,2-dimethyl-1-butylene, 2-methyl isophthalic acid-hexene, 4-methyl-1-pentene, 1-heptene, 3-methyl isophthalic acid-hexene, 2,2-dimethyl-1-amylene, 3,3-dimethyl-1-amylenes, 2,3-dimethyl-1-amylenes, 3-ethyl-1-amylene, 2,2,3-trimethyl-1-butylene, 1-octene, 2,2,4-trimethyl-1-octenes etc. These 'alpha '-olefin monomers can be used alone, it is possible to two or more combines use. Additionally, in ethene-alpha-olefin copolymer, except above-mentioned monomer, other polymerizable monomer can be used. As other polymerizable monomer, the vinyl compounds such as vinylacetate, styrene, acrylonitrile, methacrylonitrile, ketenes can be enumerated; The unsaturated carboxylic acid such as acrylic acid, methacrylic acid; The esters of unsaturated carboxylic acids such as acrylic acid methyl ester., ethyl acrylate, n-propyl, methyl methacrylate, ethyl methacrylate, n propyl methacrylate; The unsaturated carboxylic acid amide such as acrylamide, Methacrylamide etc. These polymerizable monomers can be used alone, it is possible to two or more combines use.
The thickness of concavo-convex absorbed layer is not particularly limited, it is preferred to 10～450 μm, be more preferably 30～300 μm.
(adhering agent layer)
Adhering agent layer is made up of the solidfied material of energy-line solidifying type adhesion agent composition. According to above-mentioned adhering agent layer, due to excellent with the fissility of the interface of bond layer at adhering agent layer, thus the chip with bond layer can be readily available in the manufacture method of aftermentioned semiconductor device.
If under not using adhering agent layer situation, direct lamination adhesive oxidant layer on above-mentioned concavo-convex absorbed layer, then concavo-convex absorbed layer can become big with the peeling force of bond layer, has the situation causing concavo-convex absorbed layer with stripping (splitting) difficulty of the interface of bond layer. If additionally, on concavo-convex absorbed layer direct lamination adhesive oxidant layer, then in the manufacturing process of aftermentioned semiconductor device, have the situation that cannot obtain the splitting wanted. Such as have the shearing force because the back side grinding of wafer generates, cause that concavo-convex absorbed layer and bond layer occur inadvertently peeling off situation, or occur the cohesion of concavo-convex absorbed layer to destroy, cause the situation adhering to the residue of concavo-convex absorbed layer on bond layer. The residue of concavo-convex absorbed layer accompanying on bond layer, has the situation causing that the reliability of semiconductor device reduces.
By via by the constituted adhering agent layer of solidfied material of energy-line solidifying type adhesion agent composition, the concavo-convex absorbed layer of stacking and bond layer, above-mentioned unfavorable condition can be eliminated. That is, because adhering agent layer is excellent with the fissility of the interface of bond layer, thus the chip with bond layer can be readily available.
In addition, if replacing the adhering agent layer being made up of the solidfied material of energy-line solidifying type adhesion agent composition, change into and use uncured adhering agent layer, then in order to reduce the cohesiveness of adhering agent layer, a large amount of cross-linking agent must be added in adhering agent layer, cause that the curing time till reaching regulation adhesion strength (peeling force) is elongated.That is, by using the adhering agent layer being made up of the solidfied material of energy-line solidifying type adhesion agent composition, curing time can be shortened, thus semiconductor interface can be improved and share the productivity of adhesive sheet.
In the solidfied material of energy-line solidifying type adhesion agent composition, essence does not contain unreacted reactive double bond base, even if or containing being the amount that effect of the present invention will not constitute effect yet. Specifically, have the adhering agent layer being made up of the solidfied material of energy-line solidifying type adhesion agent composition adhesive sheet (for the sandwich of base material, concavo-convex absorbed layer and adhering agent layer in the present invention), adhesion strength rate of change after energy line pre-irradiation is in 90～100% scopes. The rate of change of this adhesion strength can be measured according to following method. First, adhesive sheet is cut to long 200mm, wide 25mm, and prepares adhesion strength mensuration sheet. Then, the adhering agent layer of adhesion strength mensuration sheet is pasted on the minute surface of semiconductor crystal wafer, obtains the duplexer being made up of semiconductor crystal wafer and adhesion strength mensuration sheet. By the duplexer that obtains 23 DEG C, place 20 minutes under relative humidity 50% environment. Adhesion strength mensuration sheet for the duplexer after being placed, implement 180 ° according to JISZ0237:2000 and draw stripping test (making adhesion strength mensuration sheet is the parts being drawn stripping side), measure the adhesion strength (unit: mN/25mm) of energy line pre-irradiation. Additionally, the adhesion strength for the duplexer after being placed measures sheet, implement energy line and irradiate (220mW/cm2、160mJ/cm2), according to the adhesion strength (unit: mN/25mm) measured as described above after energy line irradiates. Then, rate of change is calculated from the adhesive meter after the energy line pre-irradiation measured.
The reactive double bond base of the present invention is the functional group with polymerism carbon-to-carbon double bond, can enumerate vinyl, pi-allyl, (methyl) acryloyl group etc. as concrete example, it is preferred to (methyl) acryloyl group. Owing to the reactive double bond base of the present invention can generate free radical under free radical exists, and easily cause polyaddition reaction, thus be not necessarily referring to the double bond without polymerism. Such as constitute and each composition of energy-line solidifying type adhesion agent composition can contain aromatic rings, but the unsaturated structure of aromatic rings is not for the reactive double bond base of the present invention.
Energy-line solidifying type adhesion agent composition at least contains: component of polymer (A) (is also called for short " composition (A) " below. Relevant other composition also with) and energy ray-curable compound (B), or containing having the energy-line solidifying type polymer (AB) of (A) composition and (B) constitutive property concurrently. Additionally, energy-line solidifying type polymer (AB) and component of polymer (A) and/or energy ray-curable compound (B) can be used simultaneously.
Hereinafter, to being specifically described for the acrylic compounds adhesion agent composition containing acrylate copolymer (A1) as component of polymer (A).
(A1) acrylate copolymer
Acrylate copolymer (A1) is at least in the monomer constituting it, containing the polymer of (methyl) acrylate monomer or derivatives thereof, it is however preferred to have reactive functional groups.
It addition, the reactive functional groups of the present invention is the aitiogenic functional group of cross-linking functional group having with aftermentioned cross-linking agent (C) or cross-linking agent (J), carboxyl, amido, epoxy radicals, hydroxyl etc. specifically can be enumerated.
The reactive functional groups of acrylate copolymer (A1) can produce reaction with the cross-linking functional group of cross-linking agent (C) and form three-dimensional mesh structure, and improves the cohesiveness of adhering agent layer. Its result, easily can peel off the bond layer being arranged on adhering agent layer from adhering agent layer.
As the reactive functional groups of acrylate copolymer (A1), from the viewpoint of be easier to optionally react with the organic multicomponent isocyanate compound being preferably used as cross-linking agent (C), it is preferred to hydroxyl.Reactive functional groups, aftermentioned (methyl) acrylate with hydroxyl is used by constituting the monomer of acrylate copolymer (A1), there is (methyl) acrylate of carboxyl, there is (methyl) acrylate of amido, there is (methyl) acrylate of epoxy radicals, the monomer with carboxyl beyond (methyl) acrylic acid or itaconic acid etc. (methyl) acrylate, the monomer etc. beyond (methyl) acrylate such as vinyl alcohol or N-methylol (methyl) acrylamide with hydroxyl has the monomer of reactive functional groups, can be directed in acrylate copolymer (A1).
In this situation, acrylate copolymer (A1) is in the total monomer constituting it, it is preferable that has the monomer of reactive functional groups containing 1～50 mass %, more preferably contains 2～20 mass % it is preferred that contain 2～15 mass %. If acrylate copolymer (A1) having the content of monomer of reactive functional groups more than 50 mass %, then the interaction to each other of usual highly polar reactive functional groups can become excessive, causes that the operation having acrylate copolymer (A1) becomes the misgivings of difficulty.
The weight average molecular weight (Mw) of acrylate copolymer (A1) is preferably 10,000～2,000,000, is more preferably 100,000～1,500,000.
Value in the present invention, when the value of weight average molecular weight (Mw), number-average molecular weight (Mn) and molecular weight distribution (Mw/Mn) is utilize gel osmoticing chromatogram analysis method (GPC) method (polystyrene standard) to measure. According to the mensuration that this kind of method carries out, for instance be used in TOSOH company high speed GPC device " HLC-8120GPC ", according to high speed tubing string " TSKgurdcolumnHXL-H”、“TSKGelGMHXL”、“TSKGelG2000HXL" order of (being TOSOH company system above) and link, in tubing string temperature: 40 DEG C, liquor charging speed: when 1.0mL/ divides, detector uses differential refraction rate meter to implement.
Additionally, the glass transition temperature (Tg) of acrylate copolymer (A1) is preferably-45～0 DEG C, is more preferably-35～-15 DEG C of scopes. By being set in above-mentioned scope by the glass transition temperature of acrylate copolymer (A1), the fissility of adhering agent layer and the interface of bond layer can be improved.
The glass transition temperature (Tg) of acrylate copolymer (A1) can pass through to constitute the combination adjustment of the monomer of acrylate copolymer (A1). Such as the method improving glass transition temperature, when the monomer constituting acrylate copolymer (A1) uses (methyl) alkyl acrylate that carbon number is 1～18 of aftermentioned alkyl, the method selecting less (methyl) alkyl acrylate of carbon number of alkyl or the method increasing less (methyl) the alkyl acrylate content ratio of atomic number of alkyl carbon.
It addition, single Polymer glass transition temperature that the glass transition temperature (Tg) of acrylate copolymer (A1) is according to the monomer constituting acrylate copolymer (A1), obtain according to formula calculated below (FOX formula). The Tg of acrylate copolymer (A1) is set to Tgcopolymer, single polymers Tg of monomer X of constituting acrylate copolymer (A1) be set to Tgx, monomer Y single polymers Tg be set to Tgy, monomer X mole fraction be set to Wx(mol%), the mole fraction of monomer Y is set to Wy(mol%), then FOX formula just represents according to following formula (1):
100/Tgcopolymer=Wx/Tgx+Wy/Tgy…(1)
Further, even if FOX formula acrylate copolymer (A1) is for be made up of more than 3 unitarily formed combined polymerizations, still can treat as and set up the additivity same with above formula (1).
As (methyl) acrylate monomer or derivatives thereof, (methyl) alkyl acrylate that carbon number is 1～18 that alkyl can be listed, (methyl) acrylate with cyclic skeleton, there is (methyl) acrylate of hydroxyl, there is (methyl) acrylate of epoxy radicals, there is (methyl) acrylate of amido, there is (methyl) acrylate of carboxyl.
(methyl) alkyl acrylate that carbon number is 1～18 as alkyl, (methyl) acrylic acid methyl ester. can be listed, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate, (methyl) amyl acrylate, (methyl) Hexyl 2-propenoate, (methyl) heptylacrylate, (methyl) 1-Octyl acrylate, (methyl) acrylic acid-2-ethyl caproite, (methyl) acrylic acid ester in the ninth of the ten Heavenly Stems, (methyl) decyl acrylate, (methyl) lauryl acrylate, (methyl) acrylic acid myristyl ester, (methyl) octadecyl acrylate etc.
As (methyl) acrylate with cyclic skeleton, (methyl) acrylate base ester, (methyl) benzyl acrylate, (methyl) isobornyl acrylate, (methyl) acrylic acid bicyclo-pentyl ester, (methyl) acrylic acid dicyclopentenyl ester, (methyl) acrylic acid dicyclopentenyl oxygen base ethyl ester, acid imide (methyl) acrylate etc. can be listed.
As (methyl) acrylate with hydroxyl, (methyl) acrylic acid-2-hydroxyl ethyl ester, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-2-hydroxy butyl ester etc. can be listed.
As (methyl) acrylate with epoxy radicals, glycidyl (methyl) acrylate etc. can be listed.
As (methyl) acrylate with amido, mono aminoethane base (methyl) acrylate, diethylin (methyl) acrylate etc. can be listed.
As (methyl) acrylate with carboxyl, phthalic acid 2-(methyl) acryloyloxyethyl ester, phthalic acid 2-(methyl) acryloxy propyl ester etc. can be listed.
Additionally, in acrylate copolymer (A1), the monomer beyond (methyl) acrylic acid, itaconic acid etc. (methyl) acrylate with carboxyl can be made; There is beyond (methyl) acrylate such as vinyl alcohol, N-methylol (methyl) acrylamide the monomer of hydroxyl; (methyl) acrylonitrile, (methyl) acrylamide, vinylacetate, styrene etc. carry out copolymerization.
These materials can be used alone a kind, it is possible to two or more uses simultaneously.
(B) energy ray-curable compound
Energy ray-curable compound (B) containing reactive double bond base, if be subject to ultraviolet, electron beam Isoenergetical line irradiation will polymerizing curable, there is the function making the cohesiveness of adhesion agent composition reduce.
Example as this energy ray-curable compound, the low molecular weight compound (simple function group, polyfunctional monomer and oligomer) with reactive double bond base can be enumerated, specifically, can use trimethylolpropane trimethacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacryande, dipentaerythritol acrylate, 1, the acrylate such as 4-butanediol diacrylate, 1,6-hexanediyl ester; The acrylate containing annular aliphatic skeleton such as bicyclopentadiene dimethoxy diacrylate, isobornyl acrylate; The acrylic ester compounds such as polyethyleneglycol diacrylate, few polyester acrylate, urethane acrylate oligomer, epoxy modification acrylate, polyether acrylate. This kind of usual molecular weight of compound is 100～30000, it is preferred to about 300～10000.
Being commonly angled relative to composition (A) (comprising aftermentioned energy-line solidifying type polymer (AB)) 100 mass parts, the low molecular weight compound with reactive double bond base is preferably with 0～200 mass parts, is more preferably the ratio use about 1～100 mass parts, more preferably 1～30 mass parts.
(AB) energy-line solidifying type polymer
Energy-line solidifying type polymer (AB) has the character having concurrently as polymer function Yu energy ray-curable.
The above-mentioned energy-line solidifying type polymer (AB) having composition (A) and (B) character concurrently, at the main chain of polymer, side chain or end, is bonded with reactive double bond base.
At the reactive double bond base that the main chain of energy-line solidifying type polymer, side chain or end are bonded, as illustrated in above-mentioned. Reactive double bond base via alkylidene, alkylene oxide group, poly-alkylene oxide group, can be bonded to the main chain of energy-line solidifying type polymer, side chain or end.
The weight average molecular weight (Mw) of energy-line solidifying type polymer (AB) is preferably 10,000～2,000,000, is more preferably 100,000～1,500,000. Additionally, the glass transition temperature (Tg) of energy-line solidifying type polymer (AB) is preferably-45～0 DEG C, is more preferably-35～-15 DEG C of scopes. Additionally, react at the acrylate copolymer (A1) and the aftermentioned compound containing polymerizable group that make to have hydroxyl isoreactivity functional group, and when obtaining energy-line solidifying type polymer (AB), Tg refers to the Tg of the acrylate copolymer (A1) before reacting with the compound containing polymerism base.
Energy-line solidifying type polymer (AB) is for such as making to react with the compound containing polymerizable group of the aitiogenic substituent group of this reactive functional groups and polymerism carbon-to-carbon double bond and obtain containing having 1～5 in carboxyl, amido, epoxy radicals, the acrylate copolymer (A1) of hydroxyl isoreactivity functional group and every 1 molecule. Acrylate copolymer (A1) is preferably the polymer being made up of (methyl) acrylate monomer or derivatives thereof of tool reactive functional groups. The compound of polymerizable group is contained as this; (methyl) acryloyloxyethyl isocyanate, m-isopropenyl-alpha, alpha-dimethylbenzyl isocyanates, (methyl) propenoyl isocyanate, allyl iso cyanurate, glycidyl (methyl) acrylate, (methyl) acrylic acid etc. can be listed.
When energy-line solidifying type polymer (AB) for making acrylate copolymer (A1) containing reactive functional groups and the compound containing polymerizable group react and obtain when, energy-line solidifying type polymer (AB) can be crosslinked. When adding cross-linking agent, being reacted with reactive functional groups by the cross-linking functional group of cross-linking agent, energy-line solidifying type polymer (AB) is crosslinked, the cohesiveness of adjustable adhering agent layer.
(C) cross-linking agent
In the present invention, for coherency can be given to adhering agent layer, it is preferred to add cross-linking agent (C) in energy-line solidifying type adhesion agent composition. As cross-linking agent, organic multicomponent isocyanate compound, organic multicomponent epoxide, organic multicomponent group with imine moiety, metal-chelating class cross-linking agent etc. can be listed, from the viewpoint of reactive high, it is preferable that organic multicomponent isocyanate compound.
As organic multicomponent isocyanate compound, aromatic polyvalent isocyanate compound can be listed, aliphatic polybasic isocyanate compound, the trimer of alicyclic polyhydric isocyanate compound and their organic multicomponent isocyanate compound, isocyanuric acid ester body, adduct is (with ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, Semen Ricini wet goods is containing the reactant of the compound of low molecule reactive hydrogen, the such as XDI etc. of adduction trimethylolpropane), the terminal isocyanate urethane prepolymer etc. that organic multicomponent isocyanate compound and polyol compound react and obtain.
More style as organic multicomponent isocyanate compound, 2 can be listed, 4-toluene di-isocyanate(TDI), 2, 6-toluene di-isocyanate(TDI), 1, 3-XDI, 1, 4-XDI, diphenyl-methane-4, 4'-diisocyanate, diphenyl-methane-2, 4'-diisocyanate, 3-MDPM diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexyl methyl hydride-4, 4'-diisocyanate, dicyclohexyl methyl hydride-2, 4'-diisocyanate, the toluene di-isocyanate(TDI) of adduction trimethylolpropane and lysine isocyanates.
Concrete example as organic multicomponent epoxide, 1 can be listed, double; two (the N of 3-, N'-2-glycidyl amine methyl) hexamethylene, N, N, N', N'-four glycidyl group-meta-xylylenediamine, Ethylene glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, trimethylolpropane diglycidyl ether, diglycidylaniline, 2-glycidyl amine etc.
Concrete example as organic multicomponent group with imine moiety, N can be listed, N'-diphenyl-methane-4,4'-double; two (1-aziridine carboxylic acid amides), trimethylolpropane-three-β-aziridinyl propionic ester, tetramethylol methane-three-β-aziridinyl propionic ester and N, N'-Toluene-2,4-diisocyanate, double; two (1-aziridine carboxylic acid amides) triethylenemelanin of 4-etc.
As the concrete example of metal-chelating class cross-linking agent, the zirconium chelating class cross-linking agent such as three n-butoxyethyl acetoacetic acid zirconiums, two n-butoxies double; two (ethyl acetoacetic acid) zirconium, n-butoxy three (ethyl acetoacetic acid) zirconium, four (n-pro-pyl acetoacetic acid) zirconium, four (acetoaceto acetic acid) zirconium, four (ethyl acetoacetic acid) zirconiums can be listed; The titanium chelating class cross-linking agent such as double; two (ethyl acetoacetic acid) titanium of diisopropoxy, double; two (acetyl group acetic acid) titanium of diisopropoxy, double; two (pentanedione) titaniums of diisopropoxy; The aluminum chelating class cross-linking agent etc. such as double; two (ethyl acetoacetic acid) aluminum of diisopropoxy ethyl acetoacetic acid aluminum, diisopropoxy aluminium acetylacetonate, isopropoxy, double; two (acetylacetone,2,4-pentanedione) aluminum of isopropoxy, three (ethyl acetoacetic acid) aluminum, aluminium tris(acetylacetonate), double; two (ethyl acetoacetic acid) aluminum of single acetyl acetone.
Described material can be used alone a kind, it is possible to use two or more simultaneously.
Such as cross-linking functional group's (such as NCO) that above-mentioned cross-linking agent (C) has, produce reaction with the reactive functional groups (such as hydroxyl) of acrylate copolymer (A1).
Relative to acrylate copolymer (A1) 100 mass parts, cross-linking agent (C) is preferably with 0.01～20 mass parts, the ratio use being more preferably 0.1～10 mass parts, more preferably 0.5～5 mass parts. By being set in above-mentioned scope by the addition of cross-linking agent, the cohesiveness of adhering agent layer just can be improved. Additionally, when the situation using energy-line solidifying type polymer (AB), relative to energy-line solidifying type polymer (AB) 100 mass parts, cross-linking agent (C) is preferably and uses with the ratio of above-mentioned scope, when using acrylate copolymer (A1) and energy-line solidifying type polymer (AB) at the same time, relative to the two total amount 100 mass parts, it is preferred to use with the ratio of above-mentioned scope.
Acrylic compounds adhesion agent composition containing, for example aforesaid propylene acid polymer (A1) and energy ray-curable compound (B) or the acrylic compounds adhesion agent composition containing energy-line solidifying type polymer (AB), irradiated by energy line and solidify.As energy line, ultraviolet, electron beam etc. specifically can be used.
(D) Photoepolymerizationinitiater initiater
By combination Photoepolymerizationinitiater initiater (D) in energy ray-curable compound (B) or energy-line solidifying type polymer (AB), just can shorten the polymerizing curable time, and reduce light irradiation dose.
As this Photoepolymerizationinitiater initiater, benzophenone can be listed, 1-Phenylethanone., benzoin, benzoin methylether, benzoin ethyl ether, benzoin iso-propylether, benzoin isobutyl ether, benzoin benzoic acid, benzoin essence of Niobe, benzoin dimethyl ketal, 2, 4-diethyl thioxanthone, 1-hydroxyl cyclohexyl-phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide (tetramethylthiurammonosulfide), azobis isobutyronitrile, benzyl, bibenzyl, diacetyl, 1, 2-diphenyl-methane, 2-hydroxy-2-methyl-1-[4-(1-methyl ethylene) phenyl] acetone, 2, 4, 6-trimethyl benzoyl diphenyl base phosphine oxide and β-chlorinating aq etc. Photoepolymerizationinitiater initiater can be used alone a kind, it is possible to two or more combines use.
The adding proportion of Photoepolymerizationinitiater initiater, relative to energy ray-curable compound (B) or energy-line solidifying type polymer (AB) 100 mass parts, it is preferred to containing 0.1～10 mass parts, be more preferably containing 1～5 mass parts. It addition, when using energy ray-curable compound (B) and energy-line solidifying type polymer (AB) at the same time, relative to the two total amount 100 mass parts, it is preferred to add Photoepolymerizationinitiater initiater with above-mentioned scope.
If the adding proportion of Photoepolymerizationinitiater initiater is less than 0.1 mass parts, then can cause obtaining satisfied curable because of photopolymerization deficiency, if more than 10 mass parts, then can generate and be helpless to photopolymerisable residue, cause the reason becoming unfavorable condition.
Additionally, in energy-line solidifying type adhesion agent composition, as other compositions: dyestuff, pigment, resist degradation agent, antistatic additive, fire retardant, silicone compounds, chain-transferring agent, plasticizer etc. can be added.
Energy-line solidifying type adhesion agent composition is preferably containing mentioned component, and adhering agent layer is made up of the solidfied material of this energy-line solidifying type adhesion agent composition. The adhering agent layer being made up of the solidfied material of energy-line solidifying type adhesion agent composition, irradiate by share energy line illustrated in the manufacture method of adhesive sheet at aftermentioned semiconductor interface, make the tunicle (uncured adhering agent layer) that the acrylic compounds adhesion agent composition containing acrylate copolymer (A1) and energy ray-curable compound (B) or the acrylic compounds adhesion agent composition containing energy-line solidifying type polymer (AB) are constituted solidify and obtain.
There is no particular limitation for the thickness of adhering agent layer, is generally 1～100 μm, is preferably 1～60 μm, is more preferably 1～30 μm.
(bond layer)
Bond layer is strippingly formed on above-mentioned adhering agent layer. The function that bond layer is at least required is (1) plate shape maintenance, (2) initial bond and (3) curable.
By adding Binder Composition in bond layer, just (1) plate shape maintenance and (3) curable can be given, as Binder Composition, the 1st Binder Composition containing component of polymer (E) and curable composition (F) can be used or containing the 2nd Binder Composition having (E) composition and the curable polymer composition (EF) of (F) constitutive property concurrently.
It addition, can (2) initial bond of the temporary function being adhered on adherend as the period before till solidifying at bond layer, it is possible to be pressure-sensitive adhesive, can also be utilize heat and softening bonding character.(2) initial bond is controlled usually by the addition adjustment etc. of all characteristic of Binder Composition, aftermentioned inorganic filler (G).
(the 1st Binder Composition)
1st Binder Composition by containing component of polymer (E) and curable composition (F), giving plate shape maintenance and curable to bond layer. It addition, the 1st Binder Composition be easy to the 2nd Binder Composition differentiation in, do not contain curable polymer composition (EF).
(E) component of polymer
Component of polymer (E) for making an addition in bond layer under the main purpose giving plate shape maintenance to bond layer. For reaching above-mentioned purpose, the weight average molecular weight (Mw) of component of polymer (E) is generally more than 20,000, is preferably 20,000～3,000,000. It addition, be easy to the differentiation of aftermentioned curable polymer composition (EF) in, component of polymer (E) does not have aftermentioned solidification function functional group.
As component of polymer (E), can use acrylate copolymer, polyester, phenoxy resin (be easy to aftermentioned curable polymer (EF) differentiation in, be only limitted to the material without epoxy radicals), Merlon, polyethers, polyurethane, silicone alkane, rubber polymer etc. Further, it is also possible to be bonded described material of more than two kinds, for instance the acrylic urethane resin etc. obtained by making the urethane prepolymer that the acrylic polyol with the acrylate copolymer of hydroxyl and molecular end have NCO react. Additionally, containing being bonded polymer of more than two kinds, it is also possible to combination uses two or more of these materials.
(E1) acrylate copolymer
As component of polymer (E), it is preferred to use acrylate copolymer (E1). The glass transition temperature (Tg) of acrylate copolymer (E1) is preferably-60～50 DEG C, is more preferably the scope of-50～40 DEG C, more preferably-40～30 DEG C. If the glass transition temperature of acrylate copolymer (E1) is high, then the cementability of bond layer reduces, and has generation bond layer from unfavorable conditions such as strippings semiconductor crystal wafer after transfer.
The weight average molecular weight of acrylate copolymer (E1) is preferably 100,000～1,500,000. If the weight average molecular weight of acrylate copolymer (E1) is high, then the cementability of bond layer reduces, and has generation bond layer from unfavorable conditions such as strippings semiconductor crystal wafer after transfer.
Acrylate copolymer (E1) at least contains (methyl) acrylate monomer or derivatives thereof in the monomer constituting it. As (methyl) acrylate monomer or derivatives thereof, material illustrated in acrylate copolymer (A1) can be listed.
As the monomer constituting acrylate copolymer (E1), the monomer with hydroxyl can be used. By using described monomer, acrylate copolymer (E1) imports hydroxyl, when bond layer additionally contains energy ray-curable composition (F2), the intermiscibility between itself and acrylate copolymer (E1) can be promoted. As the monomer with hydroxyl, (methyl) acrylic acid-2-hydroxyl ethyl ester can be listed, (methyl) 2-hydroxypropyl acrylate etc. has (methyl) acrylate of hydroxyl; N-methylol (methyl) acrylamide etc.
As the monomer constituting acrylate copolymer (E1), the monomer with carboxyl can be used. By using described monomer, acrylate copolymer (E1) imports carboxyl, when bond layer additionally contains energy ray-curable composition (F2), the intermiscibility between itself and acrylate copolymer (E1) can be improved.As the monomer with carboxyl, phthalic acid 2-(methyl) acryloyloxyethyl ester, phthalic acid 2-(methyl) acryloxy propyl ester etc. can be listed there is (methyl) acrylate of carboxyl; (methyl) acrylic acid, maleic acid, fumaric acid, itaconic acid etc. As aftermentioned curable composition (F), when using epoxies Thermocurable composition, owing to carboxyl can produce reaction with the epoxy radicals in epoxies Thermocurable composition, thus the monomer with carboxyl makes consumption more few more good.
As the monomer constituting acrylate copolymer (E1), the monomer with amido can be used. As this monomer, mono aminoethane base (methyl) acrylate etc. can be listed there is (methyl) acrylate etc. of amido.
As the monomer constituting acrylate copolymer (E1), it be also possible to use vinylacetate, styrene, ethylene, alpha-olefin etc. in addition.
Acrylate copolymer (E1) can be crosslinked. When bond layer contains aftermentioned cross-linking agent (J), acrylate copolymer (E1) preferably has reactive functional groups. The reactive functional groups of acrylate copolymer (E1) and the reactive functional groups synonym in composition (A), the acrylate copolymer with reactive functional groups can pass through method acquisition described in composition (A).
Wherein, the acrylate copolymer (E1) with the hydroxyl as reactive functional groups is easily prepared, owing to easily using cross-linking agent (J) to import cross-linked structure, so preferably. Additionally, the acrylate copolymer (E1) with hydroxyl is excellent with the intermiscibility of aftermentioned Thermocurable composition (F1).
As the monomer constituting acrylate copolymer (E1), by using the monomer with reactive functional groups, and when importing reactive functional groups in the acrylate copolymer (E1), have reactive functional groups monomer, ratio in the monomer gross mass constituting acrylate copolymer (E1) is preferably 1～20 mass %, is more preferably 3～15 mass %. By the construction unit from the monomer with reactive functional groups in acrylate copolymer (E1) is set in above-mentioned scope, then reactive functional groups produces reaction with the cross-linking functional group of cross-linking agent (J) and forms three-dimensional mesh structure, can improve the crosslink density of acrylate copolymer (E1). Its result, the shear strength of bond layer is excellent. Additionally, due to the water absorption of bond layer reduces, thus the semiconductor device that encapsulation reliability is excellent can be obtained.
(E2) non-acrylic resin
In addition, as component of polymer (E), can use from polyester, phenoxy resin (be easy to aftermentioned curable polymer (EF) differentiation in, be only limitted to the material without epoxy radicals), Merlon, polyethers, polyurethane, polysiloxanes, rubber polymer or their two or more bonding material in independent a kind or the combination of more than two kinds of non-acrylic resin (E2) that select. The weight average molecular weight of this resin is preferably 20,000～100,000, is more preferably 20,000～80,000.
The glass transition temperature of non-acrylic resin (E2) is preferably-30～150 DEG C, is more preferably-20～120 DEG C of scopes.
When non-acrylic resin (E2) is used with aforesaid propylene acid polymer (E1) simultaneously, when using semiconductor interface to share adhesive sheet, bond layer is needed on semiconductor die bowlder, can more easily carry out the splitting of adhering agent layer and bond layer, more can follow bond layer on transfer surface, it is suppressed that hole etc. occur.
When non-acrylic resin (E2) is used with aforesaid propylene acid polymer (E1) simultaneously, the content of non-acrylic resin (E2), in the non-acrylic resin (E2) mass ratio (E2:E1) with acrylate copolymer (E1), it is generally 1:99～60:40, is preferably the scope of 1:99～30:70.By being set within the scope of this by non-acrylic resin (E2) content, the effect above can be obtained.
(F) curable composition
Curable composition (F) to give curable as under main purpose, making an addition in bond layer to bond layer. Curable composition (F) can use Thermocurable composition (F1) or energy ray-curable composition (F2). In addition it is also possible to be combined using to them. Thermocurable composition (F1) at least contains the compound having by heating the functional group reacted. Additionally, energy ray-curable composition (F2) is containing the compound with reactive double bond base, if being subject to the irradiation of ultraviolet, electron beam Isoenergetical line, can polymerizing curable. The functional group being had by these curable compositions is reacted to each other, forms three-dimensional mesh structure, is achieved in solidifying. Owing to curable composition (F) uses with component of polymer (E) combination, from the viscosity of the coating composition (adhesive composite) suppressed for forming bond layer, improve the viewpoint considerations such as operability, usual weight average molecular weight (Mw) is 10, less than 000, it is preferably 100～10,000.
It addition, " the reactive double bond base " of bond layer and " reactive double bond base " synonym illustrated in adhering agent layer.
(F1) Thermocurable composition
Thermocurable composition is preferably such as epoxies Thermocurable composition.
Epoxies Thermocurable composition contains the compound (F11) with epoxy radicals, it is preferred to combination uses the compound (F11) and thermal curing agents (F12) with epoxy radicals.
(F11) there is the compound of epoxy radicals
As the compound (F11) (below also referred to as " epoxide (F11) ") with epoxy radicals, existing known material can be used. Specifically can list the epoxide in polyfunctional group based epoxy resin, bisphenol A diglycidyl ether or its hydride, Study On O-cresol Epoxy Resin, dicyclopentadiene-type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenylene matrix type epoxy resin equimolecular with more than 2 functional groups. 1 kind or two or more combination use but these materials can be used alone.
When using epoxide (F11), relative to component of polymer (E) 100 mass parts in bond layer, epoxide (F11) is preferably containing 1～1500 mass parts, is more preferably containing 3～1200 mass parts. If epoxide (F11) is few, then have bond layer cured after the tendency that reduces of cementability.
(F12) thermal curing agents
Thermal curing agents (F12) is function as the firming agent for epoxide (F11). As preferred thermal curing agents, can enumerate 1 molecule has more than 2 can with the compound of the aitiogenic functional group of epoxy radicals. As this functional group, phenolic hydroxyl group, alcohol hydroxyl group, amido, carboxyl and anhydride etc. can be listed. Wherein preferably can enumerate phenolic hydroxyl group, amido, anhydride etc., more preferably can enumerate phenolic hydroxyl group, amido.
As the concrete example of phenols curing agent, polyfunctional group class phenol resin, bis-phenol, novolac type phenol resin, bicyclopentadiene class phenol resin, allopurinol type phenol resin (ザ イ ロ ッ Network type Off ェ ノ Le fat), aralkyl-phenol resin can be listed.
As the concrete example of amine curing agent, DICY (dicyandiamide) can be enumerated.
1 kind or two or more mixing use but these materials can be used alone.
Relative to epoxide (F11) 100 mass parts, the content of thermal curing agents (F12) is preferably 0.1～500 mass parts, is more preferably 1～200 mass parts.If thermal curing agents content is few, then have bond layer cured after cementability reduce tendency.
(F13) curing accelerator
For adjusting the heat cure speed of bond layer, curing accelerator (F13) can be used. When curing accelerator (F13) is particularly preferred for the epoxies Thermocurable composition being adopted as Thermocurable composition (F1).
As preferred curing accelerator, the tertiary amines such as triethylene diamine, benzyl dimethylamine, triethanolamine, dimethylaminoethanol, three (dimethylamine methyl) phenol can be listed; The imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2 pheny1 4,5 dihydroxymethyl imidazole, 2 phenyl 4 methyl 5 hydroxy methylimidazole; The organic phosphine classes such as tributylphosphine, diphenyl phosphine, triphenyl phasphine; Tetraphenyl borates such as tetraphenyl boron tetraphenyl phosphine, tetraphenyl boron triphenylphosphine etc. 1 kind or two or more mixing use but these materials can be used alone.
Total amount 100 mass parts relative to epoxide (F11) Yu thermal curing agents (F12), it is preferred to contain curing accelerator (F13) with 0.01～10 mass parts, the amount that is more preferably 0.1～1 mass parts. By containing curing accelerator (F13) with the amount of above-mentioned scope, if exposed to still having superior adhesion under high-temperature high humility, high-reliability when if exposed to harsh reflow condition, still can be realized. By the interpolation of curing accelerator (F13), can improve bond layer cured after cementability. This effects more many of curing accelerator (F13) content are more strong.
(F2) energy ray-curable composition
Contain energy ray-curable composition by bond layer, can carry out needing big energy and long heat curing processes, and carry out the solidification of bond layer. Thus, manufacturing cost can be sought reduce.
Energy ray-curable composition can be used alone the energy line reactive compounds (F21) as the compound with reactive double bond base, it is preferable that combination uses energy line reactive compounds (F21) and Photoepolymerizationinitiater initiater (F22).
(F21) energy line reactive compounds
As energy line reactive compounds (F21), specifically can list trimethylolpropane trimethacrylate, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, dipentaerythritol monohydroxypentaacryande, dipentaerythritol acrylate or 1, 4-butanediol diacrylate, 1, the acrylic ester compounds such as 6-hexanediyl ester, in addition, few polyester acrylate can be listed, urethane acrylate class oligomer, epoxy acrylate, polyether acrylate and itaconic acid oligomer etc. have the acrylate compounds of the paradigmatic structure of acrylic ester compound etc., the compound that molecular weight is relatively low. this compound at least has 1 polymerism carbon-to-carbon double bond in molecule.
When using energy line reactive compounds (F21), relative to component of polymer (E) 100 mass parts in bond layer, energy line reactive compounds (F21) preferably comprises 1～1500 mass parts, is more preferably containing 3～1200 mass parts.
(F22) Photoepolymerizationinitiater initiater
By combination Photoepolymerizationinitiater initiater (F22) in energy line reactive compounds (F21), the polymerizing curable time can be shortened, and reduce light irradiation dose.
As this Photoepolymerizationinitiater initiater (F22), specifically can list benzophenone, 1-Phenylethanone., benzoin, benzoin methylether, benzoin ethyl ether, benzoin iso-propylether, benzoin isobutyl ether, benzoin benzoic acid, benzoin essence of Niobe, benzoin dimethyl ketal, 2, 4-diethyl thioxanthone, α-hydroxyl cyclohexyl-phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobis isobutyronitrile, benzyl, bibenzyl, diacetyl, 1, 2-diphenyl-methane, 2-hydroxyl-2-methyl isophthalic acid-[4-(1-methyl ethylene) phenyl] acetone, 2, 4, 6-trimethyl benzoyl diphenyl base phosphine oxide, and β-chlorinating aq etc.Photoepolymerizationinitiater initiater (B22) but can be used alone a kind, also two or more combination use.
The adding proportion of Photoepolymerizationinitiater initiater (F22), relative to energy line reactive compounds (F21) 100 mass parts, it is preferred to containing 0.1～10 mass parts, be more preferably containing 1～5 mass parts.
If the adding proportion of Photoepolymerizationinitiater initiater (F22) is less than 0.1 mass parts, then can cause obtaining satisfied curable because of photopolymerization deficiency, and if more than 10 mass parts, then can generate and be helpless to photopolymerisable residue, become the reason of unfavorable condition.
(the 2nd Binder Composition)
2nd Binder Composition passes through containing curable polymer composition (EF), and bond layer gives plate shape maintenance and curable.
(EF) curable polymer composition
Curable polymer composition is the polymer having and solidifying function functional group. Solidify function functional group mutually to react and the functional group of three-dimensional mesh structure can be constituted, the functional group and reactive double bond base that utilize heating to react can be listed.
Solidify function functional group can addition in the continuous structure unit as curable polymer composition (EF) skeleton, it is possible to addition is in end. When solidify function functional group addition in the continuous structure unit as curable polymer composition (EF) skeleton time, solidify function functional group can addition in side chain, it is possible to direct addition is in main chain. The weight average molecular weight (Mw) of curable polymer composition (EF), from realizing bond layer is given the purpose viewpoint of plate shape maintenance, is generally more than 20,000.
As the functional group utilizing heating to react, epoxy radicals can be enumerated. As the curable polymer composition (EF) with epoxy radicals, the compound containing epoxy radicals of high molecular can be listed, there is the phenoxy resin of epoxy radicals.
Additionally, can be the polymer same with aforesaid propylene acid polymer (E1), as monomer, it is possible to be the polymer (acrylate copolymer containing epoxy radicals) making the monomer of apparatus epoxy radicals carry out being polymerized. As the monomer with epoxy radicals, for instance glycidyl (methyl) acrylate etc. can be enumerated there is (methyl) acrylate of glycidyl.
When using the acrylate copolymer containing epoxy radicals, its preferred form is identical with acrylate copolymer (E1) except epoxy radicals.
When making curable polymer composition (EF) of apparatus epoxy radicals, same as the situation of the epoxies Thermocurable composition of curable composition (F) with using, thermal curing agents (F12) or curing accelerator (F13) can be used simultaneously.
As the reactive double bond base in curable polymer composition (EF), it is preferred to (methyl) acryloyl group. As the curable polymer composition (EF) with reactive double bond base, it is the acrylic ester compound etc. that polyether acrylate etc. has paradigmatic structure, can use high molecular person.
In addition, can use and such as make side chain have the raw polymer of the functional group X such as hydroxyl, with the low molecular compound of the aitiogenic functional group Y of functional group X (when such as functional group X is hydroxyl for NCO etc.) and reactive double bond base, can react and the polymer prepared with having.
In this situation, when raw polymer meets aforesaid propylene acid polymer (E1), the preferred form of this raw polymer is identical with acrylate copolymer (E1).
When using curable polymer composition (EF) with reactive double bond base, Photoepolymerizationinitiater initiater (F22) can be used in the same manner with the situation using energy ray-curable composition (F2) simultaneously.
2nd Binder Composition can and with curable polymer composition (EF), containing above-mentioned component of polymer (E), curable composition (F).
In bond layer, except Binder Composition, also can contain following component.
(G) inorganic filler
Bond layer can contain inorganic filler (G). By inorganic filler (G) is made an addition in bond layer, adjustable solidify after the thermal coefficient of expansion of bond layer, by semiconductor crystal wafer by the thermal coefficient of expansion optimization of bond layer after solidifying, the reliability of semiconductor device can be improved. Additionally, the hygroscopicity of cured rear bond layer also can be reduced.
As preferred inorganic filler, the powder such as silicon dioxide, aluminium oxide, Talcum, calcium carbonate, titanium oxide, ferrum oxide, carborundum, boron nitride can be listed, they are carried out the ball of spheroidization, mono-crystlling fibre and glass fibre etc. Among this, it is preferred to silica filler and alumina packing. Above-mentioned inorganic filler (G) can be used alone, it is possible to two or more mixes use.
Relative to total solid composition 100 mass parts constituting bond layer, inorganic filler (G) content range for can more really obtain the effect above is preferably 1～80 mass parts, more preferably 5～60 mass parts, more preferably 10～40 mass parts.
(H) coloring agent
Coloring agent (H) can be added at bond layer. As coloring agent, pigment and the dyestuff of organic or inorganic can be used. Among this, from the viewpoint of electromagnetic wave, infrared shield, it is preferred to black pigment. As black pigment, carbon black, ferrum oxide, manganese dioxide, nigrosine, activated carbon etc. can be used, but be not limited merely to this.
Coloring agent (H) can be used alone a kind, it is possible to two or more combines use.
Relative to total solid composition 100 mass parts constituting bond layer, the addition of coloring agent (H) is preferably 0.1～35 mass parts, more preferably 0.5～25 mass parts, more preferably 1～15 mass parts.
(I) coupling agent
In order to improve the coherency of the bond layer cementability to semiconductor crystal wafer and/or bond layer, can use have with the aitiogenic functional group of inorganic matter and with the coupling agent (I) of the aitiogenic functional group of organo-functional group. Additionally, by using coupling agent (I), the thermostability of bond layer after solidification can not be damaged, improves resistance to water. As this kind of coupling agent, metatitanic acid salt coupling agent, aluminate class coupling agent, silane coupler etc. can be listed. Among this, it is preferred to silane coupler.
As silane coupler, it is preferred to use the silane coupler of its group reacted for the functional group having with component of polymer (E), curable composition (F), curable polymer composition (EF) etc. with the aitiogenic functional group of organo-functional group.
As this kind of silane coupler, γ-glycidoxypropyltrime,hoxysilane can be listed, γ-glycidoxypropyl diethoxy silane, β-(3, 4-epoxycyclohexyl) ethyl trimethoxy silane, γ-(methacryloxypropyl) trimethoxy silane, γ-amine propyl trimethoxy silicane, N-6-(amine ethyl)-γ-amine propyl trimethoxy silicane, N-6-(amine ethyl)-γ-amine hydroxypropyl methyl diethoxy silane, N-phenyl-γ-amine propyl trimethoxy silicane, γ-urea propyl-triethoxysilicane, γ-mercaptopropyl trimethoxy silane, γ-mercaptopropyl methyl dimethoxysilane, double, two (3-triethoxysilane propyl group) tetrasulfide, MTMS, MTES, vinyltrimethoxy silane, vinyltriacetoxy silane, imidizole silane etc.These materials can be used alone a kind, but or also two or more mixing use.
Relative to total amount 100 mass parts of component of polymer (E), curable composition (F) and curable polymer composition (EF), silane coupler generally with 0.1～20 mass parts, be preferably 0.2～10 mass parts, the ratio that is more preferably 0.3～5 mass parts contains. If silane coupled agent content is less than 0.1 mass parts, have the probability that cannot obtain the effect above, and if more than 20 mass parts, have the probability becoming ease gas reason.
(J) cross-linking agent
For regulating initial bond power and the cohesiveness of bond layer, cross-linking agent (J) can be added. It addition, when adding cross-linking agent, containing reactive functional groups in aforesaid propylene acid polymer (E1).
As cross-linking agent (J), organic multicomponent isocyanate compound, organic multicomponent group with imine moiety etc. can be listed, can illustrate with the cross-linking agent (C) in above-mentioned adhering agent layer illustrated in identical material.
When using isocyanates cross-linking agent, it is preferred to use there is the acrylate copolymer (E1) of the hydroxyl as reactive functional groups. If cross-linking agent has NCO and acrylate copolymer (E1) has hydroxyl, then can cause the reaction between cross-linking agent and acrylate copolymer (E1), easily can import cross-linked structure in bond layer.
When using cross-linking agent (J), relative to acrylate copolymer (E1) 100 mass parts, cross-linking agent (J) is generally with 0.01～20 mass parts, preferably 0.1～10 mass parts, the ratio use being more preferably 0.5～5 mass parts.
(K) universal additive
In bond layer, apart from the above, various additive can optionally be added. As various additives, levelling agent, plasticizer, antistatic additive, antioxidant, ion capturing agent, getter (getteringagent), chain-transferring agent, remover etc. can be listed.
Bond layer can use the adhesive composite such as mixed in appropriate proportions by above-mentioned each composition and obtain to obtain. Adhesive composite can advance with solvent dilution, or can make an addition in solvent when mixing. In addition, it is possible to when adhesive composite uses, utilize solvent dilution.
As this solvent, ethyl acetate, methyl acetate, diethyl ether, dimethyl ether, acetone, butanone, acetonitrile, hexane, hexamethylene, toluene, heptane etc. can be listed.
Bond layer has initial bond and curable, in the uncured state, in room temperature or heating under by be squeezed in semiconductor crystal wafer just can be easily bonding. Additionally, can caking oxidant layer when extruding. Then, cured, even if sufficient binding function still can be kept under harsh high-temperature high humidity. It addition, bond layer can be single layer structure, it also can be multiple structure.
The thickness of bond layer is not particularly limited. The semiconductor interface of the present invention share adhesive sheet by arranging concavo-convex absorbed layer, even if share at semiconductor interface and the semiconductor wafer surface that the bond layer of adhesive sheet is pasted being formed overshooting shape electrode, semiconductor interface share adhesive sheet, and the tracing ability of the overshooting shape electrode of crystal column surface is still excellent, overshooting shape electrode can be buried in this adhesive sheet, thus the thickness of bond layer can be set to the height less than overshooting shape electrode. Specifically, the thickness of bond layer is preferably 1～100 μm, more preferably 2～80 μm, more preferably 3～50 μm, the highly preferred of overshooting shape electrode is 10～150 μm, more preferably 20～120 μm, more preferably more than 50 μm and less than 100 μm.Additionally, by being set in above-mentioned scope by the thickness of bond layer, bond layer can play the function of high-reliability bonding agent.
(semiconductor interface share adhesive sheet)
Semiconductor interface of the present invention such as above layers composition share the structure of adhesive sheet, as shown in Figures 1 and 2. As shown in Figures 1 and 2, semiconductor interface share adhesive sheet 10 and is stacked gradually formed by base material 1, concavo-convex absorbed layer 2, adhering agent layer 3 and bond layer 4. Bond layer 4 is strippingly formed on adhering agent layer 3, as long as be roughly the same shape or the shape completely including semiconductor die toroidal with semiconductor crystal wafer, there is no particular limitation for all the other. Such as shown in Fig. 1, it is same shape or the shape completely including semiconductor die toroidal that semiconductor interface share that the bond layer 4 of adhesive sheet 10 is adjusted to semiconductor crystal wafer, it is laminated in again by than on the constituted duplexer of the larger sized adhering agent layer of bond layer 43, concavo-convex absorbed layer 2 and base material 1, shaped structure in advance can be obtained. Additionally, as in figure 2 it is shown, the duplexer same shape that bond layer 4 is and is made up of adhering agent layer 3, concavo-convex absorbed layer 2 and base material 1 can be made.
In addition, the semiconductor interface of form shown in Fig. 1 share the periphery portion in adhesive sheet at adhering agent layer, the semiconductor interface of form shown in Fig. 2 share the periphery portion in adhesive sheet at bond layer, can be arranged to the fixture adhesive linkage of other fixtures such as stationary annular framework.
As fixture adhesive linkage, the adhesion parts adhesion parts being made up of adhering agent layer monomer can be adopted, being made up of base material and adhering agent layer and the two-sided adhesion parts being provided with adhering agent layer on core is two-sided.
Fixture adhesive linkage is ring-type (ring shape), has blank part (inside opening), has the size being fixed on the fixtures such as annular frame.
As the sticker of the adhering agent layer forming fixture adhesive linkage, it is not particularly limited, it is preferred to be made up of such as acrylic acid sticker, rubber-like sticker or silicone sticker. Among this, if considering the releasable from annular frame, it is preferred to acrylic acid sticker. Additionally, above-mentioned sticker can be used alone, it is possible to two or more mixes use.
As the base material of fixture adhesive linkage, core, the material identical with above-mentioned base material can be used.
The adhering agent layer thickness of fixture adhesive linkage is preferably 2～20 μm, more preferably 3～15 μm, more preferably 4～10 μm, and the thickness of base material is preferably 15～200 μm, more preferably 30～150 μm, more preferably 40～100 μm.
Semiconductor interface share the shape of adhesive sheet and not only limits to monolithic, it is possible to for bar-shape, also can be furled.
Additionally, share in adhesive sheet at semiconductor interface, for bond layer can be protected before use, can on bond layer stacking stripping film. This stripping film can use such as polyethylene terephthalate film, the film of the remover such as silicon-coating ketone resin on the plastic materials such as polypropylene screen.
Semiconductor interface share the preparation method of adhesive sheet and is not particularly limited, and illustrates for the adhesive sheet of form shown in Fig. 2.
First, on stripping film, coating constitutes the compositions of concavo-convex absorbed layer and makes it dry, and forms concavo-convex absorbed layer. Then, laminated substrate on concavo-convex absorbed layer, and remove stripping film.
Additionally, when the compositions constituting concavo-convex absorbed layer is energy-line solidifying type compositions (such as containing the solidification compound of amine ester polymer), on stripping film, coating constitutes the compositions of concavo-convex absorbed layer and makes it dry, form film, to film irradiation energy line, stripping film forms semi-solid preparation layer.
Then, laminated substrate on semi-solid preparation layer, from substrate side irradiation energy line, make semi-solid preparation layer be fully cured, base material is formed concavo-convex absorbed layer. It addition, the either phase that stripping film is in the front and back of energy line irradiation process is peeled off.
Additionally, coat on stripping film by adhesion agent composition and make it dry, form uncured adhering agent layer.
Then, uncured adhering agent layer is laminated in by above-mentioned obtained concavo-convex absorbed layer. Then, from stripping film side irradiation energy line, adhering agent layer is made to solidify, it is thus achieved that by being sequentially laminated with the duplexer that base material, concavo-convex absorbed layer, adhering agent layer and stripping film are constituted.
Additionally, coat on stripping film by adhesive composite and make it dry, form bond layer.
Finally, from above-mentioned obtained duplexer, remove stripping film, and on the adhering agent layer exposed, paste bond layer, by transferring, it is thus achieved that the semiconductor interface of the present invention share adhesive sheet.
Then, semiconductor interface of the present invention being share to the using method of adhesive sheet, this adhesive sheet to be pasted on wafer, and the situation being applicable to the manufacture of semiconductor device is that example illustrates.
(manufacture method of semiconductor device)
The manufacture method of the semiconductor device of the present invention includes: paste the operation that above-mentioned semiconductor interface share the bond layer of adhesive sheet on wafer, and wafer rear is implemented the operation of grinding.
Hereinafter, the manufacture method a portion example for semiconductor device of the present invention is described in detail.
In the 1st manufacture method of semiconductor device of the present invention, first it is formed on surface in the circuit face of semiconductor crystal wafer of circuit, pastes semiconductor interface and share adhesive sheet. During stickup, the circuit face of semiconductor crystal wafer is placed in semiconductor interface and share on the bond layer of adhesive sheet, extrude gently, heat at reduced pressure conditions according to situation, make bond layer softening fix semiconductor crystal wafer. Then, if necessary in utilizing semiconductor interface to share under the state of circuit face that adhesive sheet protects semiconductor crystal wafer, the back side of grinding wafer forms the wafer of specific thickness.
Semiconductor crystal wafer can be Silicon Wafer, or is alternatively the compound semiconductor wafers such as gallium arsenic. Circuit on crystal column surface is formed and available includes etching method, strips off method etc. and implement from the various methods of existing universal method. The circuit formation process of semiconductor crystal wafer is formed the circuit of regulation. There is no particular limitation for thickness before this wafer grinding, is generally about 500～1000 μm. Additionally, the surface configuration of semiconductor crystal wafer there is no particular limitation, overshooting shape electrode can be formed. As overshooting shape electrode, the penetrating electrode etc. of column type electrode, sphere pole (projection), through semiconductor crystal wafer can be listed.
Back side grinding is when pasting semiconductor interface and share adhesive sheet, by using grinder and the known maneuver for the fixing absorptive table of wafer etc. to implement. Overleaf after grinding operation, can implement to remove the process of the crushable layer produced because of grinding. There is no particular limitation for semiconductor crystal wafer thickness after the grinding of the back side, it is preferred to 10～400 μm, more preferably about 25～300 μm. Semiconductor interface according to the present invention share adhesive sheet, can positively keep wafer when the back side grinding of wafer, and can prevent cutting water from invading in circuit face, and can prevent concave point.
After the grinding operation of the back side, the back side of wafer is pasted the adhesive sheet of common name " cutting blade (dicingsheet) ".The device of stickup general common name " chip mounter (mounter) " of cutting blade is implemented, and there is no particular limitation.
Then, implement the crystalline substance of pasted wafer on cutting blade and cut, wafer is carried out singualtion, it is thus achieved that chip.
When semiconductor interface of the present invention share adhesive sheet implement when being pasted on semiconductor crystal wafer crystalline substance cut time, semiconductor interface share adhesive sheet and is singulated together with wafer. In this case, peel off the semiconductor interface through singualtion and share the base material of adhesive sheet, concavo-convex absorbed layer and adhering agent layer, make bond layer residue in the circuit face of chip.
Additionally, can before implementing crystalline substance and cutting, the base material of stripping semiconductor joint adhesive sheet, concavo-convex absorbed layer and adhering agent layer, implement crystalline substance when bond layer residues in the circuit face of wafer and cut.
Additionally, the method of the base material of stripping semiconductor joint adhesive sheet, concavo-convex absorbed layer and adhering agent layer, there is no particular limitation, include, for example the substrate side share adhesive sheet at semiconductor interface, to cover under the form of this adhesive sheet, paste adhesive sheet, then by method that base material, concavo-convex absorbed layer and adhering agent layer remove together with adhesive sheet.
There is no particular limitation for the cut-out means of semiconductor crystal wafer. As an example, can list when wafer cuts off, after utilizing the periphery of the fixing cutting blade of annular frame, by using the method etc. of the chip rotating the known maneuver enforcement wafers such as dise knife of cutting machine etc. The cut-out degree of depth now is that semiconductor interface share adhesive sheet thickness or the bond layer thickness total amount with semiconductor crystal wafer thickness and wears away the degree of depth of part plus cutting saw blade. Additionally, be possible with laser cutting bond layer and wafer.
Secondly, if implementing cutting blade extension as required, then semiconductor chip interval can be expanded, and can more easily implement the pickup of semiconductor chip. Now, offseting between chip and cutting blade, and the bonding force between chip and cutting blade reduces, the pick of semiconductor chip is improved. If implementing the pickup of semiconductor chip according to this, the bond layer set being cut off can be made to remain on semiconductor circuit chip face, peeling off from cutting blade.
Then, the welding sequence (viscous crystalline substance) of semiconductor chip is implemented. In welding sequence, via bond layer, semiconductor chip is placed in the chip pad portion of lead frame or other semiconductor chips (hypomere chip) first-class (the chip pad portion below chip carried or hypomere chip etc., be called " chip carrying portion "). Pressure during mounting is generally 1kPa～200MPa.
Chip carrying portion can heat before mounting semiconductor chip, it is possible to implements heating after mounting. Heating-up temperature is generally 80～200 DEG C, is preferably 100～180 DEG C, is generally 0.1 second～5 minutes heat time heating time, is preferably 0.5 second～3 minutes.
Additionally, when forming overshooting shape electrode on the chip surface, even if because of the heating in welding sequence or pressure, the overshooting shape electrode that chip carrying portion engages is caused to be deformed, even if the thickness of bond layer is less than the height of overshooting shape electrode, bond layer also can bury between chip and chip carrying portion, thus chip can be adhered to chip carrying portion securely.
After semiconductor chip is placed in chip carrying portion, the bond layer that heating carries out can be utilized as required to solidify when following resin seal outside, additionally it is embodied as the heating making bond layer solidify. Heating condition now is in above-mentioned heating temperature range, is generally 1～180 minute heat time heating time, is preferably 10～120 minutes.
In addition, it is possible in the heat treated being not carried out after loading in preliminary tacky state, utilize the heating under the resin seal generally carried out in encapsulation manufacture, make bond layer solidify. By through thus planting operation, bond layer will solidify, and gives bonding securely with chip carrying portion by semiconductor chip, just can fixed chip. Because bond layer is liquidation under viscous crystal bar part, thus the concavo-convex of chip carrying portion also can be buried fully, can prevent hole from occurring, and improves encapsulation reliability.
In the 2nd manufacture method of semiconductor device of the present invention, identical with above-mentioned 1st manufacture method, the circuit face of semiconductor crystal wafer is pasted semiconductor interface and share the bond layer of adhesive sheet, the back side of grinding wafer. Overleaf after grinding operation, can implement to remove because of the process of crushable layer produced by grinding.
After the grinding of the back side, from wafer rear side towards inside wafer irradiating laser. Laser is irradiated by lasing light emitter. LASER Light Source is the device of the light producing wavelength and phase place through integrating, and as the kind of laser, can enumerate the laser producing the initiation multiphoton absorption such as the Nd-YAG laser of pulse laser, Nd-YVO laser, Nd-YLF laser, titanium sapphire laser. The wavelength of laser is preferably 800～1100nm, is more preferably 1064nm.
Laser is irradiated in inside wafer, forms upgrading portion along predetermined cutting line at inside wafer. The number of times scanning laser for a predetermined cutting line can be once, it is possible to for repeatedly. Preferably while the predetermined cutting line position monitored between laser irradiating position and circuit, implement the para-position of laser, implement laser and irradiate. It addition, predetermined cutting line by differentiation on the wafer surface imaginary line between each circuit of formation.
After upgrading portion is formed, wafer rear is pasted cutting blade. Then, make bond layer residue in the circuit face of wafer, the base material of stripping semiconductor joint adhesive sheet, concavo-convex absorbed layer and adhering agent layer.
Then, the crystalline substance being implemented on cutting blade pasted wafer cuts, by wafer singualtion, it is thus achieved that chip. Semiconductor crystal wafer is chip by extension cutting blade. That is, being formed behind upgrading portion in inside wafer utilizing laser to irradiate, if implementing extension, then cutting blade can extend, and semiconductor crystal wafer can be separated into each chip with the upgrading portion of inside wafer for starting point is cut-off. Now, bond layer can be cut off and be separated into each chip size. Additionally, while extension, fixture etc. can be used to catch cutting blade, extend cutting blade, and bond layer is separated according to the cut-out of each chip with wafer. Extension is preferably under-20～40 DEG C of environment, implements according to 5～600mm/ speed divided. Additionally, after expanded operation, for the lax of expanded cutting blade can be eliminated, thermal contraction can be implemented. Then, pickup surface is provided with the chip of bond layer, prepares semiconductor device via welding sequence. Welding sequence is identical with above-mentioned 1st manufacture method.
1st manufacture method described in detail above and the 2nd manufacture method, only illustrate manufacture method a portion of the present invention, and the manufacture method of the present invention can be other form. Such as, can be share the stage before adhesive sheet is pasted on wafer at semiconductor interface to terminate the back side grinding of wafer, and share the manufacture method of the back side grinding not implementing wafer after adhesive sheet is pasted at semiconductor interface.
In addition, the singualtion method of wafer can be form the ditch of the degree of depth less of wafer thickness from the face side of wafer, by wafer rear being implemented what is called " first crystalline substance the cuts method " enforcement that grinding arrives ditch and implements singualtion, can also described in such as Japanese Patent Laid-Open 2004-111428, laser is made to coordinate chip form incident from crystal column surface, formed in the operation in upgrading region at inside wafer, add the wafer dividing method of the operation of grinding wafer rear.
Learnt by the manufacture method of above-mentioned semiconductor device, the semiconductor interface of the present invention share adhesive sheet can be used as can suitable in from wafer rear grinding operation to the grinding back surface chip welding sequence/glutinous chip.
Embodiment
Hereinafter, utilizing embodiment to illustrate for the present invention, the present invention is not limited merely to these embodiments. It addition, for below example and comparative example, every evaluation is such as following to be carried out.
The tan δ > of the concavo-convex absorbed layer at < 70 DEG C
Semiconductor interface in embodiment share in adhesive sheet manufacturing process, on the semi-solid preparation layer formed on stripping film, and another stripping film of stacking (material, thickness are all identical). Then, implement 4 ultraviolet radiation (embodiment and the used ultraviolet lamp of comparative example and ultraviolet source are all identical, and irradiation condition is the illumination 271mW/cm of lamp height 150mm, lamp power 3kW (corrected power 120mW/cm), wavelength of light 365nm from the stripping film side of institute's stacking2, irradiation dose 1200mJ/cm2(using ORC manufacturing company ultraviolet gauge " UV-351 " to measure)), make semi-solid preparation layer be fully cured, form the concavo-convex absorbed layer of monolayer of the thickness 150 μm seized on both sides by the arms by 2 stripping films.
Mode within the scope of with thickness for 1～2mm, the multiple concavo-convex absorbed layer of stacking, it is thus achieved that sample. Use obtained sample, use determination of viscoelasticity device (Rheometric company ProductName " ARES " (torsional shear mode)), measuring-20～120 DEG C of storage elastic modulus under frequency 1Hz (6.28rad/ second) and loss elastic modulus, the loss calculating 70 DEG C just connects (tan δ=loss elastic modulus/storage elastic modulus).
The evaluation > of the concavo-convex absorbability of <
On the wafer with projection with bump height 80 μm, semiconductor interface made by embodiment and comparative example is share adhesive sheet, use stacking machine (Lintec limited company ProductName " RAD3810 "), under 0.1MPa reduced pressure, while wafer and semiconductor interface being share adhesive sheet heating to 90 DEG C while pasting, after just pasting, use level pressure thickness measurement machine (TECLOCK company ProductName " PG-02 "), measure the total thickness " A " distance of adhesive sheet substrate surface (wafer rear share from semiconductor interface) of tool convex portion, with the total thickness " B " not having convex portion, calculate " A-B " difference of height.
Difference of height is more little, it is meant that because of bump height cause concavo-convex be buried to share in adhesive sheet in semiconductor interface relax. The difference of height situation less than 10 μm is chosen as " well ", and the situation reaching more than 10 μm is chosen as " bad ".
The fissility of < bond layer evaluates >
After the evaluation of concavo-convex absorbability terminates, the semiconductor interface peeling off embodiment and comparative example from bond layer share the base material of adhesive sheet, concavo-convex absorbed layer and adhering agent layer. Having no the peelable situation in unfavorable condition ground to be chosen as " well ", the situation (concavo-convex absorbed layer has the situation etc. occurring cohesion to destroy) peeling off the unfavorable condition that happens occasionally is chosen as " bad ".
(embodiment 1)
The preparation of adhesion agent composition
Relative to by acrylic acid-2-ethyl caproite, vinylacetate and acrylic acid-2-hydroxyl ethyl ester carry out acrylate copolymer (glass transition temperature :-31 DEG C) 100 mass parts being polymerized according to 50:30:20 mass ratio as raw material, add methacryloxyethyl isocyanates 21.4 mass parts (hydroxyl value had relative to acrylate copolymer is 0.8 equivalent), under ethyl acetate solution, use as catalyst lauric acid two fourth stannum, in 25 DEG C, carry out reaction in 24 hours under normal pressure and synthesize, obtain energy-line solidifying type polymer (weight average molecular weight: 700,000).
Relative to this energy-line solidifying type polymer 100 mass parts, Photoepolymerizationinitiater initiater (BASF AG IRGACURE184 (1-hydroxyl cyclohexyl-phenyl ketone)) 3.5 mass parts and cross-linking agent (Toyo Ink manufacturing company BHS-8515 (toluene di-isocyanate(TDI) compounds)) 0.5 mass parts are mixed, it is thus achieved that adhesion agent composition.
Obtained adhesion agent composition coats on the lift-off processing face of stripping film (Lintec company SP-PET3811, thickness: 38 μm) and makes it to dry, and forms adhering agent layer. The thickness of adhering agent layer is 10 μm. It addition, dried was implemented with 100 DEG C, 1 minute. Then, 23 DEG C, preserve 3 days under the environment of 50% relative humidity and implement maintenance.
Prepared by the duplexer of base material and concavo-convex absorbed layer
By mixture 40 mass parts (solid constituent ratio) of simple function group amine Ethyl formate methacrylate and difunctional amine Ethyl formate methacrylate, isobornyl acrylate (IBXA) 45 mass parts (solid constituent ratio), Hydroxypropyl acrylate (HPA) 15 mass parts (solid constituent ratio), tetramethylolmethane four (3-mercapto butyrate) [Showa electrician's limited company KarenzMT (registered trade mark) PE1 (compound containing the mercaptan of two grades of four-functional groups, solid component concentration 100 mass %)] 3.5 mass parts (solid constituent ratio), and 2-hydroxy-2-methyl-1-phenyl-propan-1-ketone (BASF AG's system of Photoepolymerizationinitiater initiater1173, solid component concentration 100 mass %) 1 mass parts (solid constituent than) is added, and preparation is for forming the compositions (concavo-convex absorbed layer compositions) of concavo-convex absorbed layer.
Secondly, by concavo-convex absorbed layer compositions on polyethylene terephthalate (PET) film class stripping film (Lintec company SP-PET3811, thickness 38 μm), implement coating, formation film spraying die head mode. Coating thickness is 150 μm.
Then, implement ultraviolet radiation from film side, form semi-solid preparation layer. Additionally, during ultraviolet radiation, as ultraviolet lamp, use conveyer belt type ultraviolet lamp (EYEGRAPHICS company ECS-401GX), as ultraviolet source, use high-pressure mercury-vapor lamp (EYEGRAPHICS company H04-L41), at the illumination 271mW/cm that irradiation condition is lamp height 150mm, lamp power 3kW (corrected power 120mW/cm), wavelength of light 365nm2, irradiation dose 177mJ/cm2Implement under (utilizing ORC manufacturing company ultraviolet gauge " UV-351 " to measure) condition.
On formed semi-solid preparation layer, stacking is as the PET film of the thickness 100 μm of base material. 4 ultraviolet radiation (illumination 271mW/cm using above-mentioned ultraviolet lamp, ultraviolet source, irradiation condition to be lamp height 150mm, lamp power 3kW (corrected power 120mW/cm), wavelength of light 365nm are further implemented from substrate side2, irradiation dose 1200mJ/cm2(using ORC manufacturing company ultraviolet gauge " UV-351 " to measure)) so that it is it is fully cured, base material is formed the concavo-convex absorbed layer of thickness 150 μm.
The stacking of concavo-convex absorbed layer and adhering agent layer
Above-mentioned obtained uncured adhering agent layer is made to fit on concavo-convex absorbed layer. Then, ultraviolet lamp (Lintec company RAD-2000m/12), irradiation ultraviolet radiation (illumination 140mW/cm are used from stripping film side2, light quantity 510mJ/cm2), and make adhering agent layer solidify.
The preparation of adhesive composite
Each composition of adhesive composite is such as following. According to following compositions and addition, add each composition and prepare adhesive composite. The mass parts of the numeric representation solid constituent conversion of each composition, the solid constituent in the present invention refers to all the components beyond solvent.
(EF) acrylate copolymer (weight average molecular weight: 900,000, glass transition temperature :-28 DEG C)/100 mass parts being made up of n-butyl acrylate 55 mass parts, acrylic acid methyl ester. 10 mass parts, glycidyl methacrylate 20 mass parts and acrylic acid-2-hydroxyl ethyl ester 15 mass parts
(F11-1) bisphenol A type epoxy resin (JapanEpoxyResins company jER828, epoxide equivalent: 235g/eq)/90 mass parts
(F11-2) phenol aldehyde type epoxy resin (Japan chemical medicine company EOCN-104S, epoxide equivalent: 218g/eq)/90 mass parts
(F12) thermal curing agents: novolac type phenol resin (DIC company TD-2131, phenolic hydroxyl group equivalent: 103g/eq)/80 mass parts
(F13) curing accelerator: 2 pheny1 4,5 dihydroxymethyl imidazole (four countries chemical conversion industrial group Curezol2PHZ-PW)/1 mass parts
(G) inorganic filler: silica filler (Nissan Chemical company MEK-ST, mean diameter: 10～15nm)/50 mass parts
(I) coupling agent: silane coupler (chemical company of SHIN-ETSU HANTOTAI KBE-403)/3 mass parts
Adhesive composite utilize butanone dilute in the way of solid component concentration becomes 50 mass %, coated and dried on the stripping film crossed through silicone-treated (Lintec limited company SP-PET381031), form bond layer.The thickness of bond layer is 40 μm. It addition, dried utilizes baking box to implement 1 minute with 100 DEG C.
Then, make adhering agent layer and the bond layer laminating exposed through removing the stripping film pasted on above-mentioned adhering agent layer, and bond layer is needed on adhering agent layer, just obtain semiconductor interface and share adhesive sheet.
(embodiment 2)
At base material with the duplexer preparation of concavo-convex absorbed layer, except being set to except 1.5 mass parts by the addition of tetramethylolmethane four (3-mercapto butyrate), acquisition semiconductor interface share adhesive sheet in the same manner as example 1.
(comparative example 1)
Except being not provided with adhering agent layer, bond layer is fitted in except on concavo-convex absorbed layer, obtain semiconductor interface in the same manner as example 1 and share adhesive sheet.
(comparative example 2)
Except adhering agent layer directly being pasted mutually with base material except being not provided with concavo-convex absorbed layer, obtain semiconductor interface in the same manner as example 1 and share adhesive sheet.
[table 1]
The tan δ of the concavo-convex absorbed layer at 70 DEG C Concavo-convex absorbability The fissility of bond layer
Embodiment 1 2.3 Well Well
Embodiment 2 1.67 Well Well
Comparative example 1 2.3 Well Bad
Comparative example 2 - Bad Well
Description of reference numerals
1. base material; 2. concavo-convex absorbed layer; 3. adhering agent layer; 4. bond layer; 10. semiconductor interface share adhesive sheet.

Claims (5)

1. semiconductor interface share an adhesive sheet, and this adhesive sheet is stacked gradually formed by base material, concavo-convex absorbed layer, adhering agent layer and bond layer,
Adhering agent layer is made up of the solidfied material of energy-line solidifying type adhesion agent composition,
Bond layer is strippingly formed on adhering agent layer.
2. semiconductor interface according to claim 1 share adhesive sheet, and wherein, the tan δ of the concavo-convex absorbed layer at 70 DEG C is more than 0.5.
3. semiconductor interface according to claim 1 and 2 share adhesive sheet, and wherein, this adhesive sheet is pasted on the surface that surface is formed with the semiconductor crystal wafer of overshooting shape electrode,
The thickness of bond layer is less than the height of overshooting shape electrode.
4. the semiconductor interface according to any one of claims 1 to 3 share adhesive sheet, and wherein, concavo-convex absorbed layer is made up of solidfied material or the ethene-alpha-olefin copolymer of the solidification compound containing amine ester polymer.
5. a manufacture method for semiconductor device, it uses the semiconductor interface according to any one of Claims 1 to 4 to share adhesive sheet, comprising:
Wafer is pasted the operation that semiconductor interface share the bond layer of adhesive sheet, and wafer rear is implemented the operation of grinding.
CN201480059393.1A 2013-10-30 2014-10-28 Semiconductor bonding adhesive sheet and semiconductor device manufacturing method Pending CN105683319A (en)

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Application publication date: 20160615