CN105281680B - Low-noise amplifier and method for amplifying RF signal with switch - Google Patents
Low-noise amplifier and method for amplifying RF signal with switch Download PDFInfo
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- CN105281680B CN105281680B CN201510681044.XA CN201510681044A CN105281680B CN 105281680 B CN105281680 B CN 105281680B CN 201510681044 A CN201510681044 A CN 201510681044A CN 105281680 B CN105281680 B CN 105281680B
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Abstract
The present invention relates to a kind of low-noise amplifier and method for amplifying RF signal with switch, it includes gain stage circuit, comprising being corresponded with the consistent amplifier of radiofrequency signal quantity to be amplified, the amplifier and radiofrequency signal, independent amplification can be carried out to every road radiofrequency signal；Amplify selected on-off circuit, connect with gain stage circuit, the amplifier in gain stage circuit can be selected according to radiofrequency signal to be amplified, so that the determining amplifier of selection can amplify the radiofrequency signal in the gain stage circuit；Load circuit for receiving through the amplified radio frequency output signal of gain stage circuit, and forms the radiofrequency signal through the amplified radio frequency output signal output of gain stage circuit amplifying output end.Structure of the invention is compact, while realizing the ability of RF switch and low noise amplification, reduction area occupied, reduction parasitic effects, wide adaptation range, securely and reliably.
Description
Technical field
The present invention relates to a kind of low-noise amplifier and method for amplifying RF signal, especially a kind of low noise with switch
Acoustic amplifier and method for amplifying RF signal belong to the technical field of low-noise amplifier.
Background technique
Usually radio-frequency channel choosing can be carried out using RF switch (RF Switch) in wireless or mobile communication system
It selects.Such as RF switch selection transmitting and receiving channel are used in the modules such as WiFi, bluetooth；Radio frequency is used in mobile communications
Switch carries out the control of Multiband-multimode.RF switch is played the part of more next in the radio-frequency front-end design of mobile radio terminal equipment
More important role.Low-noise amplifier is the essential device of radio-frequency front-end, for amplify received by antenna it is faint
Radiofrequency signal, output is sent to post-amplifier or frequency mixer amplifies or frequency-conversion processing.
In the prior art, RF switch and low-noise amplifier are two sseparated modules, and area occupied is more, parasitic effects
Greatly.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, a kind of low-noise amplifier with switch is provided
And method for amplifying RF signal, it is compact-sized, while realizing the ability of RF switch and low noise amplification, reduce occupancy face
Product, reduction parasitic effects, wide adaptation range, securely and reliably.
According to technical solution provided by the invention, the low-noise amplifier with switch, including
Gain stage circuit, include and the consistent amplifier of radiofrequency signal quantity to be amplified, the amplifier and radiofrequency signal
It corresponds, independent amplification can be carried out to every road radiofrequency signal；
Amplify selected on-off circuit, connect with gain stage circuit, gain stage electricity can be selected according to radiofrequency signal to be amplified
Amplifier in road, so that the determining amplifier of selection can amplify the radiofrequency signal in the gain stage circuit；
Load circuit, for receiving through the amplified radio frequency output signal of gain stage circuit, and being formed will be through gain stage electricity
The radiofrequency signal of the amplified radio frequency output signal output in road amplifies output end.
The gain stage circuit is also connect with the coupling circuit for ground connection.
The output end of the gain stage circuit is connect by driving stage circuit with load circuit, and the radiofrequency signal amplification is defeated
Outlet is formed in the junction of driving stage circuit and load circuit.
The amplifier includes gain transistor, and when the gain transistor uses metal-oxide-semiconductor, radiofrequency signal is loaded into gain
The gate terminal of transistor, and the gate terminal of gain transistor is also connect with amplification selected on-off circuit, the drain electrode of gain transistor
End is connect with load circuit.
The amplification selected on-off circuit includes and the consistent amplification selection circuit of amplifier quantity in gain stage circuit, institute
Stating amplification selection circuit includes the power switch that one end is connect with bias voltage Vbias, and the other end of the power switch passes through
Selection resistor is connected with amplifier corresponding in earthing switch and gain stage circuit, the other end ground connection of earthing switch.
The load circuit includes load inductance, load capacitance, load resistance, balun or transistor.
The coupling circuit include coupling inductance, and the coupling inductance includes on-chip inductor, package substrate inductance, deviding device
Part inductance or bondwire inductance.
At least one driving transistor of the driving stage circuit.
The gain stage circuit is used to receive to be equipped between the input terminal of radiofrequency signal and radiofrequency signal amplification output end and be used for
Alleviate the excessive bypass circuit for causing output to be distorted of radio frequency signal amplitude, the bypass circuit includes and radiofrequency signal number to be amplified
Consistent bypass branch is measured, the bypass branch is correspondingly connected with amplification selected on-off circuit, gain stage circuit；
Bypass branch include bypass selection switch, it is described bypass selection switch one end and amplification selected on-off circuit and
Gain stage circuit connection, the other end of bypass selection switch amplify output end by coupling partition capacitor and radiofrequency signal and connect
It connects.
The gain stage circuit is also connect with the coupling circuit for ground connection, and the coupling circuit include coupling inductance, institute
The quantity for stating coupling inductance is one or consistent with the quantity of gain transistor in gain stage circuit, the gain transistor
Source terminal is grounded by coupling inductance.
It is described, to the amplification method of radiofrequency signal, to be received using gain stage circuit using with the low-noise amplifier switched
Radiofrequency signal to be amplified, in the gain stage circuit comprising with the consistent amplifier of radiofrequency signal quantity to be amplified, it is described to put
Big device and radiofrequency signal correspond, can carry out independent amplification to every road radiofrequency signal；
Gain stage is selected according to radiofrequency signal to be amplified using the amplification selected on-off circuit connecting with gain stage circuit
Amplifier in circuit, so that the determining amplifier of selection can put the radiofrequency signal in the gain stage circuit
Greatly；
To the amplified radio frequency output signal of gain stage circuit, amplify output end using the radiofrequency signal that load circuit is formed
Output.
The amplification selected on-off circuit selects the quantity for determining amplifier to put less than or equal to include in gain stage circuit
Big device quantity.
The gain stage circuit is also connect with the coupling circuit for ground connection.
The output end of the gain stage circuit is connect by driving stage circuit with load circuit, and the radiofrequency signal amplification is defeated
Outlet is formed in the junction of driving stage circuit and load circuit.
The gain stage circuit is used to receive to be equipped between the input terminal of radiofrequency signal and radiofrequency signal amplification output end and be used for
Alleviate the excessive bypass circuit for causing output to be distorted of radio frequency signal amplitude, the bypass circuit includes and radiofrequency signal number to be amplified
Consistent bypass branch is measured, the bypass branch is correspondingly connected with amplification selected on-off circuit, gain stage circuit；
Bypass branch include bypass selection switch, it is described bypass selection switch one end and amplification selected on-off circuit and
Gain stage circuit connection, the other end of bypass selection switch amplify output end by coupling partition capacitor and radiofrequency signal and connect
It connects.
Advantages of the present invention: setting and the consistent amplifier of radiofrequency signal quantity to be amplified, amplification in gain stage circuit
Setting and the consistent amplification selection circuit of amplifier quantity in selected on-off circuit, amplify selection circuit according to radio frequency to be amplified
Signal can select to determine corresponding amplifier, realize the amplification to radiofrequency signal, be believed after driving stage circuit drives by radio frequency
Number amplification output end exports radio frequency output signal, compact-sized, while realizing the ability of RF switch and low noise amplification, subtracts
Few area occupied, reduction parasitic effects, wide adaptation range, securely and reliably.
Detailed description of the invention
Fig. 1 is use state block diagram of the invention.
Fig. 2 is the circuit theory schematic diagram that the present invention forms the first low-noise amplifier.
Fig. 3 is the circuit theory schematic diagram that the present invention forms the second low-noise amplifier.
Fig. 4 is the circuit theory schematic diagram that the present invention forms third low-noise amplifier.
Fig. 5 is the circuit theory schematic diagram that the present invention forms the 4th low-noise amplifier.
Fig. 6 is the circuit theory schematic diagram that the present invention forms the 5th low-noise amplifier.
Fig. 7 is the circuit theory schematic diagram that the present invention forms the 6th low-noise amplifier.
Fig. 8 is the circuit theory schematic diagram that the present invention forms the 7th low-noise amplifier.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
In order to realize the ability of RF switch and low noise amplification simultaneously, area occupied is reduced, reduces parasitic effects, originally
Invention includes
Gain stage circuit 16, comprising believing with the consistent amplifier of radiofrequency signal quantity to be amplified, the amplifier and radio frequency
It number corresponds, independent amplification can be carried out to every road radiofrequency signal；
Amplify selected on-off circuit 8, connect with gain stage circuit 16, gain stage can be selected according to radiofrequency signal to be amplified
Amplifier in circuit, so that the determining amplifier of selection can put the radiofrequency signal in the gain stage circuit 16
Greatly；
Load circuit 24, for receiving through the amplified radio frequency output signal of gain stage circuit 16, and being formed will be through gain
The radiofrequency signal of the grade amplified radio frequency output signal of circuit 16 output amplifies output end.
Specifically, radiofrequency signal to be amplified is received by gain stage circuit 16, radiofrequency signal to be amplified is generally
Ac small signal, radiofrequency signal to be amplified are one or more, and amplifier corresponding can be penetrated to each in gain stage circuit 16
Frequency signal carries out independent amplification.When it is implemented, the quantity of radiofrequency signal to be amplified, which is generally less than, is equal to amplifier, put treating
When big radiofrequency signal amplifies, it is required to select put corresponding with radiofrequency signal to be amplified by amplification selected on-off circuit
Big device, i.e. amplification selected on-off circuit 8 can enable corresponding amplifier in gain stage circuit 16 according to radiofrequency signal to be amplified,
And the amplifier of unselected determination is typically in off state in gain stage circuit 16.Radio frequency is exported by load circuit 24
Signal amplifies output end output by radiofrequency signal, and load circuit 24 is also connect with supply voltage VDD, and supply voltage VDD's is big
It is small to carry out selection determination as needed.Reach realization by the connection cooperation of amplification selected on-off circuit 8 and gain stage circuit 16
The ability of RF switch and low noise amplification reduces area occupied, reduces the purpose of parasitic effects.
Further, the gain stage circuit 16 is also connect with the coupling circuit 4 for ground connection.In the embodiment of the present invention,
The coupling circuit 4 include coupling inductance, and the coupling inductance includes on-chip inductor, package substrate inductance, discrete device inductance
Or bondwire inductance.
The output end of the gain stage circuit 16 is connect by driving stage circuit 20 with load circuit 24, the radiofrequency signal
Amplification output end is formed in the junction of driving stage circuit 20 Yu load circuit 24.In the embodiment of the present invention, the driving stage electricity
At least one the driving transistor of road 20.The load circuit 24 includes load inductance, load capacitance, load resistance, balun or crystalline substance
Body pipe.All radio frequency amplified signals through amplifier amplification can be driven by driving stage circuit 20, in radiofrequency signal
Amplification output end obtains radio frequency output signal.
In addition, the amplifier includes gain transistor, and when the gain transistor uses metal-oxide-semiconductor, radiofrequency signal load
To the gate terminal of gain transistor, and the gate terminal of gain transistor is also connect with amplification selected on-off circuit 8, gain transistor
Drain electrode end connect with load circuit 24.
The amplification selected on-off circuit 8 include with the consistent amplification selection circuit of amplifier quantity in gain stage circuit,
The amplification selection circuit includes the power switch that one end is connect with bias voltage Vbias, and the other end of the power switch is logical
It crosses selection resistor to connect with amplifier corresponding in earthing switch and gain stage circuit, the other end ground connection of earthing switch.
In the embodiment of the present invention, radiofrequency signal to be amplified loads on gate terminal, the earthing switch of gain transistor simultaneously
One end connection, power switch, earthing switch switch state controlled by control signal generating circuit, control signal generating circuit
Concrete form can according to need and carry out selection determination, specially those skilled in the art is determined.When control signal generates
When the control signal that circuit generates makes power switch closure and earthing switch disconnection, it can make and the amplification selection circuit connects
The gain transistor conducting connect, so as to be amplified by gain transistor to radiofrequency signal to be amplified.When it is implemented, control
Signal generating circuit processed can be independently controlled amplification selection circuit in amplification selected on-off circuit 8, amplification selection switch electricity
Amplification selection circuit in road 8 in connecting one to one, that is, realizes gain stage circuit 16 with the amplifier in gain stage circuit 16
Interior amplifier amplifies the independence of each radiofrequency signal to be amplified.The working frequency or frequency range of radiofrequency signal to be amplified can be identical
Or it is different, with specific reference to needing to carry out selection determination, details are not described herein again.In addition, the quantity of the coupling inductance be one or
Consistent with the quantity of gain transistor in gain stage circuit 16, the source terminal of the gain transistor is connect by coupling inductance
Ground.
Fig. 1 is a kind of specifically used state block diagram of the invention, and radiofrequency signal to be amplified is by matching network and antenna
It is formed, and is loaded on low-noise amplifier of the present invention with switch, the radio frequency of the radiofrequency signal amplification output end output
Output signal exports after post-amplifier/frequency mixer is amplified or is mixed, matching network and post-amplifier/frequency mixer
Effect and purpose be those skilled in the art known to, details are not described herein again.
Further, the gain stage circuit is used to receive between the input terminal of radiofrequency signal and radiofrequency signal amplification output end
Equipped with for alleviating the excessive bypass circuit for causing output to be distorted of radio frequency signal amplitude, the bypass circuit includes penetrating with to be amplified
The consistent bypass branch of frequency number of signals, the bypass branch are correspondingly connected with amplification selected on-off circuit, gain stage circuit；
Bypass branch include bypass selection switch, it is described bypass selection switch one end and amplification selected on-off circuit and
Gain stage circuit connection, the other end of bypass selection switch amplify output end by coupling partition capacitor and radiofrequency signal and connect
It connects.
In the embodiment of the present invention, when the amplitude of radiofrequency signal to be amplified is excessive, using gain stage circuit 16 and drive
It will lead to the radio frequency output signal distortion exported from radiofrequency signal amplification output end after dynamic grade circuit 20, at this point, amplification selection is opened
Powered-down road 8 does not select any amplifier in gain stage circuit 16, i.e. amplifier all in gain stage circuit 16 is in closing
State, radiofrequency signal to be amplified are loaded into radiofrequency signal by bypass branch and amplify output end.The switch of bypass selection switch
State also has control signal generating circuit to be controlled, when the control signal that control signal generating circuit generates selects bypass
Switch in the closure state, can make the coupled partition capacitor of radiofrequency signal to be amplified with the bypass selection switch connection
Device is transferred to radiofrequency signal amplification output end.The coupling partition capacitor is AC coupling/DC partition capacitor.
According to above-mentioned, the amplification method of the present invention using with the low-noise amplifier switched to radiofrequency signal, tool
Body are as follows: receive radiofrequency signal to be amplified using gain stage circuit 16, include and radio frequency to be amplified in the gain stage circuit 16
The consistent amplifier of number of signals, the amplifier and radiofrequency signal correspond, independent can carry out to every road radiofrequency signal
Amplification；
Gain is selected according to radiofrequency signal to be amplified using the amplification selected on-off circuit 8 connecting with gain stage circuit 16
Amplifier in grade circuit 16 so that in the gain stage circuit 16 the determining amplifier of selection can to the radiofrequency signal into
Row amplification；
Radio frequency output signal after putting 16 greatly to gain stage circuit is amplified defeated using the radiofrequency signal that load circuit 24 is formed
Outlet output.
In the embodiment of the present invention, the low-noise amplifier with switch can be realized using various circuit frameworks,
It can also be realized with various types of active, passive devices.It is set forth below brilliant using N-channel metal-oxide semiconductor (MOS) (NMOS)
The some specific embodiments for the low-noise amplifier with switch that body pipe is realized.
As shown in Fig. 2, by amplification selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 with
And load circuit 24 forms the first low-noise amplifier 2, first low-noise amplifier 2 can be to two input radio frequency signals
RFin1, radiofrequency signal RFin2 are exported after amplifying.
Specifically, coupling circuit 4 include the coupling inductance 4a for being used for source negative feedback, and gain stage circuit 16 includes increasing
Beneficial transistor 16a and gain transistor 16b, the gain transistor 16a, gain transistor 16b are all made of NMOS tube.Gain
The source terminal of transistor 16a, the source terminal of gain transistor 16b are connect with one end of coupling inductance 4a, coupling inductance 4a's
Other end ground connection.In addition, the source terminal of gain transistor 16a, the source terminal of gain transistor 16b can be directly grounded, it can also
It is grounded with passing through a coupling inductance 4a respectively.
Driving stage circuit 20 includes driving transistor 20a and driving transistor 20b, driving transistor 20a, driving crystal
Pipe 20b is all made of NMOS tube.It drives the gate electrode of transistor 20a, drive the gate terminal of transistor 20b and bias voltage
The source terminal of Vbias1 connection, driving transistor 20a is connect with the drain electrode end of gain transistor 16a, drives the source of transistor 20b
Extremely it is connect with the drain electrode end of gain transistor 16b.Load circuit 24 include load inductance 24a, one end of load inductance 24a with
Supply voltage VDD connection, the leakage of the drain electrode end, driving transistor 20b of the other end and driving transistor 20a of load inductance 24a
Extreme connection, and the other end of load inductance 24a and the drain electrode end of driving transistor 20a, the drain electrode end phase of driving transistor 20b
Radiofrequency signal is formed after connecting amplifies output end RFout.The size of bias voltage Vbias1, which can according to need, to be selected
It determines, specially known to those skilled in the art, details are not described herein again.In addition, load circuit 24 also may include load electricity
Hold and/or load resistance, load circuit 24 can also include balun, load circuit can also include transistor, active to provide
Load.The frequency response of output loading circuit 24 can be narrowband, be also possible to broadband.Radio frequency output signal RFout can
To be directly output to next stage, it can also be output to next stage via AC coupling/DC partition capacitor, specifically can according to need
It is selected.
Amplifying selected on-off circuit 8 includes that two-way amplifies selection circuit, respectively includes power switch 10a, power switch
10b, earthing switch 12a and earthing switch 12b, one end of power switch 10a, one end of power switch 10b and bias voltage
The other end of Vbias connection, power switch 10a is connect with one end of selection resistor 14a, selects the other end of resistor 14a
It is connect with the gate terminal of one end of earthing switch 12a and gain transistor 16a, the other end ground connection of earthing switch 12a.Power supply
The other end of switch 10b is connect with one end of selection resistor 14b, selects the other end of resistor 14b and earthing switch 12b's
The connection of the gate terminal of one end and gain transistor 16b, the other end ground connection of earthing switch 12b.Radiofrequency signal RFin1 to be amplified
It is loaded into the gate terminal of gain transistor 16a, radiofrequency signal RFin2 to be amplified is loaded into the gate terminal of gain transistor 16b.Electricity
The open and-shut mode difference suspension control signal generation of source switch 10a, power switch 10b, earthing switch 12a and earthing switch 12b
Circuit is controlled.Radiofrequency signal RFin1 to be amplified, the frequency of radiofrequency signal RFin2 to be amplified or frequency range can be identical or not
Together.
When power switch 10a is closed, and earthing switch 12a is disconnected, then the chosen resistor 14a of bias voltage Vbias adds
It is downloaded to the gate terminal of gain transistor 16a, gain transistor 16a conducting；Meanwhile power switch 10b is disconnected, earthing switch 12b
Closure, then the gate terminal of gain transistor 16b is pulled down to ground, and gain transistor 16 is closed.Bias voltage Vbias can also be straight
Connect the gate terminal of the gate terminal for being loaded into gain transistor 16a and/or gain transistor 16b.When it is implemented, earthing switch
One end of 12a can also be connect with the other end of power switch 10a, the other end ground connection of earthing switch 12a, earthing switch 12b
One end can also be connect with the other end of power switch 10b, the other end of earthing switch 12b ground connection, at this point, gain transistor
The gate electrode of 16a, the gate terminal of gain transistor 16b are pulled down to by selection resistor 14a, selection resistor 14b respectively
Ground.
When it is implemented, when power switch 10a closure, earthing switch 12a are disconnected, meanwhile, power switch 10b closure connects
When ground switch 12b is disconnected, then gain transistor 16a, gain transistor 16b are simultaneously turned on, i.e., are treated by gain transistor 16a
Amplification radiofrequency signal RFin1, it is simultaneously amplified simultaneously by gain transistor 16b radiofrequency signal RFin2 to be amplified.Due to gain crystalline substance
There is good input impedance isolation between body pipe 16a, gain transistor 16b, appoint between gain transistor 16a, gain transistor 16b
When one conducting, variation is generated since the effect of impedance isolation not will lead to another gain transistor.
As shown in figure 3, by amplification selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 with
And load circuit 24 forms the second low-noise amplifier 28, second low-noise amplifier 28 can be to two input radio frequency signals
RFin1, RFin2 are exported after amplifying.
Specifically, coupling circuit 4 include coupling inductance 4b and coupling inductance 4c, and amplification selected on-off circuit 8 includes electricity
Source switch 10c, power switch 10d, selection resistor 14c, selection resistor 14d, earthing switch 12c and earthing switch 12d,
Gain stage circuit 16 includes gain transistor 16c and gain transistor 16d, and driving stage circuit 20 includes driving transistor 20c
And driving transistor 20d, load circuit 24 include load inductance 24b.
Wherein, gain transistor 16c, gain transistor 16d, driving transistor 20c, driving transistor 20d are all made of
NMOS tube.The source terminal of gain transistor 16c is connect with one end of coupling inductance 4b, and the other end ground connection of coupling inductance 4b increases
The source terminal of beneficial transistor 16d is connect with one end of coupling inductance 4c, the other end ground connection of coupling inductance 4c.Gain transistor
The gate terminal of 16c is connect with one end of one end of earthing switch 12c, selection resistor 14c, and the grid of gain transistor 16c
End is for receiving radiofrequency signal RFin1.The other end of earthing switch 12c is grounded, and the other end of resistor 14c is selected to open with power supply
One end connection of 10c is closed, the other end of power switch 10c is connect with bias voltage Vbias.
The gate terminal of gain transistor 16d is connect with one end of one end of earthing switch 12d, selection resistor 14d, and is increased
The gate terminal of beneficial transistor 16d is for receiving radiofrequency signal RFin2.The other end of earthing switch 12d is grounded, and selects resistor
The other end of 14d is connect with one end of power switch 10d, and the other end of power switch 10d is connect with bias voltage Vbias.
The drain electrode end of gain transistor 16c is connect with the source terminal of driving transistor 20c, the drain electrode of gain transistor 16d
End with driving transistor 20d source terminal connect, driving transistor 20c gate terminal, driving transistor 20d gate terminal with
Bias voltage Vbias1 connection.Drive transistor 20c drain electrode end, drive transistor 20d drain electrode end with load inductance 24b
One end connection, the other end of load inductance 24b connect with supply voltage VDD.Load inductance 24b's and driving transistor 20c
Drain electrode end drives the junction of the drain electrode end of transistor 20d to form radiofrequency signal amplification output end RFout.
Frequency or frequency range where radiofrequency signal RFin1 and radiofrequency signal RFin2 may be the same or different.Amplification
Selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 effect and Fig. 2
In corresponding explanation it is consistent, the source electrode of coupling inductance 4b Yu gain stage transistor 16c are only respectively adopted in coupling circuit 4
End connection, coupling inductance 4c are connect with the source terminal of gain transistor 16d, and the specific course of work is no longer described in detail.
As shown in figure 4, by amplification selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 with
And load circuit 24 forms third low-noise amplifier 54, the third low-noise amplifier 54 can be to two input radio frequency signals
RFin1, RFin2 are exported after amplifying.
Wherein, coupling circuit 4 include coupling inductance 4d, and amplification selected on-off circuit 8 is opened including power switch 10e, power supply
Close 10f, selection resistor 14e, selection resistor 14f, earthing switch 12e and earthing switch 12f；Gain stage circuit 16 includes
Gain transistor 16e, gain transistor 16f, driving stage circuit 20 include driving transistor 20e, and load circuit 24 includes load
Inductance 24c.Gain transistor 16e, gain transistor 16f and driving transistor 20e are all made of NMOS transistor.
The source terminal of gain transistor 16e, the source terminal of gain transistor 16f are connect with one end of coupling inductance 4d,
The other end of coupling inductance 4d is grounded.The gate electrode of gain transistor 16e and one end of earthing switch 12e and selection resistor
One end of 14e connects, and the gate terminal of gain transistor 16e is for receiving radiofrequency signal RFin1.Earthing switch 12e's is another
End ground connection, selects the other end of resistor 14e to connect with one end of power switch 10e, the other end of power switch 10e and biasing
Voltage Vbias connection.
The gate terminal of gain transistor 16f is connect with one end of one end of earthing switch 12f and selection resistor 14f,
And the gate terminal of gain transistor 16f is for receiving radiofrequency signal RFin2.The other end of earthing switch 12f is grounded, and selects resistance
The other end of device 14f is connect with one end of power switch 10f, and the other end of power switch 10f connects bias voltage Vbias.
Source terminal of the drain electrode end with driving transistor 20e of the drain electrode end of gain transistor 16e, gain transistor 16f
The gate electrode of connection, driving transistor 20e is connect with bias voltage Vbias1, drives the drain electrode end and load electricity of transistor 20e
Feel one end connection of 24c, the other end of load inductance 24c is connect with supply voltage VDD.Load inductance 24c and driving transistor
The junction of the drain electrode end of 20e forms radiofrequency signal and amplifies output end RFout.
Frequency or frequency range where radiofrequency signal RFin1 and radiofrequency signal RFin2 may be the same or different.Amplification
Selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 effect and Fig. 2
In corresponding explanation it is consistent, only only comprising driving transistor 20e in driving stage circuit 20, and drive transistor 20e's
Source terminal is connect with the drain electrode end of the drain electrode end of gain transistor 16e and gain transistor 16f simultaneously, drives transistor 20e
Grid terminate bias voltage Vbias1, driving transistor 20e drain electrode end connect with load inductance 24c, third low noise is put
The specific course of work of big device 54 is no longer described in detail.
As shown in figure 5, by amplification selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 with
And load circuit 24 forms the 4th low-noise amplifier 80, the 4th low-noise amplifier 80 can be to two input radio frequency signals
RFin1, RFin2 are exported after amplifying.
Wherein, coupling circuit 4 include coupling inductance 4e and coupling inductance 4f, and amplification selected on-off circuit 8 includes power supply
Switch 10g, power switch 10h, selection resistor 14g, selection resistor 14h, earthing switch 12g and earthing switch 12h；Increase
Beneficial grade circuit 16 includes gain transistor 16g, gain transistor 16h, and driving stage circuit 20 includes driving transistor 20f, load
Circuit 24 includes load inductance 24d.Gain transistor 16g, gain transistor 16h and driving transistor 20f are all made of NMOS
Transistor.
The source terminal of gain transistor 16g, the source terminal of gain transistor 16h respectively with one end of coupling inductance 4e, coupling
One end connection of inductance 4f is closed, the other end of coupling inductance 4e, the other end of coupling inductance 4f are grounded.Gain transistor 16g
Gate electrode and one end of earthing switch 12g and select one end of resistor 14g to connect, and the grid of gain transistor 16g
End is for receiving radiofrequency signal RFin1.The other end of earthing switch 12g is grounded, and the other end of resistor 14g is selected to open with power supply
One end connection of 10g is closed, the other end of power switch 10g is connect with bias voltage Vbias.
The gate terminal of gain transistor 16h is connect with one end of one end of earthing switch 12h and selection resistor 14h,
And the gate terminal of gain transistor 16h is for receiving radiofrequency signal RFin2.The other end of earthing switch 12h is grounded, and selects resistance
The other end of device 14h is connect with one end of power switch 10h, and the other end of power switch 10h connects bias voltage Vbias.
Source terminal of the drain electrode end with driving transistor 20f of the drain electrode end of gain transistor 16g, gain transistor 16h
The gate electrode of connection, driving transistor 20f is connect with bias voltage Vbias1, drives the drain electrode end and load electricity of transistor 20f
Feel one end connection of 24d, the other end of load inductance 24d is connect with supply voltage VDD.Load inductance 24d and driving transistor
The junction of the drain electrode end of 20f forms radiofrequency signal and amplifies output end RFout.
Frequency or frequency range where radiofrequency signal RFin1 and radiofrequency signal RFin2 may be the same or different.Amplification
Selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 effect and Fig. 2
In corresponding explanation it is consistent, only only comprising driving transistor 20f in driving stage circuit 20, and coupling circuit 4 are wrapped simultaneously
4e containing coupling inductance and coupling inductance ef；Drive the source terminal of transistor 20f simultaneously with the drain electrode end of gain transistor 16g with
And the drain electrode end connection of gain transistor 16h, the grid of driving transistor 20f terminate bias voltage Vbias1, drive transistor
The drain electrode end of 20f is connect with load inductance 24d, and the source terminal of gain transistor 16g is grounded by coupling inductance 4e, gain crystal
The source terminal of pipe 16h is grounded by coupling inductance 4f, and the specific course of work of the 4th low-noise amplifier 80 is no longer described in detail.
As shown in fig. 6, by amplification selected on-off circuit 8, gain stage circuit 16, coupling circuit 4, driving stage circuit 20 with
And load circuit 24 forms the 5th low-noise amplifier 106, the 5th low-noise amplifier 106 can believe two input radio frequencies
Number RFin1, RFin2 are exported after amplifying.
Wherein, coupling circuit 4 include coupling inductance 4g, and amplification selected on-off circuit 8 is opened including power switch 10i, power supply
Close 10j, selection resistor 14i, selection resistor 14j, earthing switch 12i and earthing switch 12j；Gain stage circuit 16 includes
Gain transistor 16i, gain transistor 16j, driving stage circuit 20 include driving transistor 20g and driving transistor 20h, are born
Carrying circuit 24 includes balun (Balun).Gain transistor 16i, gain transistor 16j and driving transistor 20g and driving are brilliant
Body pipe 20h is all made of NMOS transistor.
The source terminal of gain transistor 16i, the source terminal of gain transistor 16j are connect with one end of coupling inductance 4g,
Coupling inductance 4gThe other end ground connection.The gate electrode of gain transistor 16i and one end of earthing switch 12i and selection resistor
One end of 14i connects, and the gate terminal of gain transistor 16i is for receiving radiofrequency signal RFin1.Earthing switch 12i's is another
End ground connection, selects the other end of resistor 14i to connect with one end of power switch 10i, the other end of power switch 10i and biasing
Voltage Vbias connection.
The gate terminal of gain transistor 16j is connect with one end of one end of earthing switch 12j and selection resistor 14j,
And the gate terminal of gain transistor 16j is for receiving radiofrequency signal RFin2.The other end of earthing switch 12j is grounded, and selects resistance
The other end of device 14j is connect with one end of power switch 10j, and the other end of power switch 10j connects bias voltage Vbias.
The drain electrode end source electrode with driving transistor 20g respectively of the drain electrode end of gain transistor 16i, gain transistor 16j
End, driving transistor 20h source terminal connection, drive transistor 20g gate electrode, drive transistor 20h gate terminal and partially
Voltage Vbias1 connection is set, the drain electrode end of transistor 20h is driven, drives the drain electrode end of transistor 20g and the uneven end of balun
The uneven end 24e of 24f connection, balun is connect with supply voltage VDD, the balance end 24g of balun, is used to form radio frequency letter for 24 hours
Number amplification output end RFout.
Frequency or frequency range where radiofrequency signal RFin1 and radiofrequency signal RFin2 may be the same or different.Amplification
Selected on-off circuit 8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20 and load circuit 24 effect and Fig. 2
In corresponding explanation it is consistent, only load circuit 24 uses balun, the 5th low-noise amplifier 106 it is specific worked
Cheng Buzai is described in detail.
As shown in fig. 7, by coupling circuit 4, amplification selected on-off circuit 8, gain stage circuit 16, driving stage circuit 20,
Load circuit 24 and bypass circuit form the 6th low-noise amplifier 134, wherein bypass circuit is for alleviating radiofrequency signal width
Distortion is exported caused by spending greatly.6th low-noise amplifier 134 is to radiofrequency signal RFin1 and radiofrequency signal RFin2 amplification
For be illustrated.
Amplifying selected on-off circuit 8 includes power switch 10k, power switch 10l, selection resistor 14k, selection resistor
14l, earthing switch 12k and earthing switch 12l, wherein power switch 10k, power switch 10l one end connect bias voltage
The other end of Vbias, power switch 10k are connect with one end of one end of selection resistor 14k, earthing switch 12k, select resistance
The other end of device 14k is connect with gain stage circuit 16, bypass circuit, and the other end of power switch 10l is with selection resistor 14l's
One end connection of one end, earthing switch 12l, selects the other end of resistor 14l to connect with gain stage circuit 16, bypass circuit,
Earthing switch 12k, earthing switch 12l the other end be grounded.
It is then described since the present embodiment for radiofrequency signal RFin1 and radiofrequency signal RFin2 amplification only to being illustrated
Bypass circuit includes two bypass branch, and bypass branch includes bypass selection switch 146a, bypass selection switch 146b, coupling partition
Capacitor 148a and coupling partition capacitor 148b, wherein one end of bypass selection switch 146a is another with selection resistor 14k's
The other end of end connection, bypass selection switch 146a amplifies output end RFout by coupling partition capacitor 148a and radiofrequency signal
One end of connection, bypass selection switch 146b is connect with the other end of selection resistor 14l, and bypass selection switch 146b's is another
Output end RFout is amplified with radiofrequency signal by coupling partition capacitor 148b and is connect in end.
Bypass selection switch 146a, bypass select the switch state of switch 146b to be controlled by control signal generating circuit
System, when control signal generating circuit make bypass selection switch 146a, bypass selection switch 146b be in an off state when, then side
Road circuit will not work, and the course of work of entire 6th low-noise amplifier 134 can refer to above-mentioned explanation, i.e. coupling circuit
4, gain stage circuit 16, driving stage circuit 20, load circuit and amplify selected on-off circuit 8 the course of work with it is above-mentioned
Illustrate consistent, detailed process repeats no more.
As radiofrequency signal RFin1 and radiofrequency signal RFin2 excessive there are amplitude, then pass through gain stage circuit 16, driving
When grade circuit 20 amplifies output, it is more serious to will lead to output distortion.At this point, control signal generating circuit selection bypass electricity
Transmission of the road to radiofrequency signal RFin1 and/or radiofrequency signal RFin2.Specifically, the ground connection amplified in selected on-off circuit 8 is opened
Pass 12k, earthing switch 12l are closed, so that gain stage circuit 16 will not carry out radiofrequency signal RFin1, radiofrequency signal RFin2
It is enlarged.When bypass selection switch 146a closure, radiofrequency signal RFin1 is transmitted to radio frequency by coupling partition capacitor 148a
Signal amplifies output end RFout；When bypass selection switch 146b closure, radiofrequency signal RFin2 passes through coupling partition capacitor
148b is transmitted to radiofrequency signal amplification output end RFout.
Above-mentioned Fig. 2 ~ Fig. 7 is the case where amplifying to two-way radiofrequency signal, to amplify when to multi-channel rf signal
The case where it is as shown in Figure 8.
As shown in figure 8, there are multiple gain crystal in gain stage circuit 16 when amplifying to multi-channel rf signal
Pipe, interior amplification selected on-off circuit 8 includes multiple amplification selection circuits, amplifies the quantity of selection circuit, the number of gain transistor
It measures consistent with the quantity of radiofrequency signal to be amplified.
In the embodiment of the present invention, multiple amplification selection circuits are mutually indepedent, are between amplification selection circuit and gain transistor
One-to-one connection, each amplification selection circuit can select whether a gain transistor amplifies radiofrequency signal.Fig. 8
In, power switch 10m, selection resistor 14m, earthing switch 12m, selection circuit is amplified in earthing switch 13m formation all the way, described
It is corresponding with gain transistor 16m to amplify selection circuit, wherein one end of power switch 10m is connect with bias voltage Vbias, electricity
The other end of source switch 10m is connect with one end of one end of earthing switch 13m, selection resistor 14m, and earthing switch 13m's is another
One end ground connection selects the gate terminal of the other end of resistor 14m and one end of earthing switch 12m and gain transistor 16m to connect
It connects, the gate terminal of gain transistor 16m is for receiving radiofrequency signal RFin1.
Power switch 10n, selection resistor 14n, earthing switch 12n, it is electric that earthing switch 13n forms amplification selection all the way
Road, the amplification selection circuit are corresponding with gain transistor 16n, wherein one end of power switch 10n and bias voltage Vbias
The other end of connection, power switch 10n is connect with one end of one end of earthing switch 13n, selection resistor 14n, earthing switch
The other end of 13n is grounded, and selects the other end and one end of earthing switch 12n and the grid of gain transistor 16n of resistor 14n
Extreme connection, the gate terminal of gain transistor 16n is for receiving radiofrequency signal RFin2.
Power switch 10p, selection resistor 14p, earthing switch 12p, it is electric that earthing switch 13p forms amplification selection all the way
Road, the amplification selection circuit are corresponding with gain transistor 16p, wherein one end of power switch 10p and bias voltage Vbias
The other end of connection, power switch 10p is connect with one end of one end of earthing switch 13p, selection resistor 14p, earthing switch
The other end of 13p is grounded, and selects the other end and one end of earthing switch 12p and the grid of gain transistor 16p of resistor 14p
Extreme connection, the gate terminal of gain transistor 16p is for receiving radiofrequency signal RFinn.Above-mentioned gain transistor 16m, gain are brilliant
Body pipe 16n and gain transistor 16p uses the type of attachment of common source.
Amplify the cooperation shape of remaining amplification selection circuit and gain transistor in gain stage circuit 16 in selected on-off circuit 8
Formula can illustrate with reference to foregoing description, specifically repeat no more.
It is brilliant with gain transistor 16m and the gain for amplifying the matching relationship of selection circuit and gain transistor
It is illustrated for the amplification selection circuit of body pipe 16m connection cooperation.Specifically, bias voltage Vbias and gain transistor 16m
Gate terminal between there are three types of connection relationship: the first are as follows: power switch 10m closure and earthing switch 13m and earthing switch 12m
It disconnects, bias voltage Vbias is added to the grid of gain transistor 16m via selection resistor 14m；Second are as follows: power switch
10m and earthing switch 13m is disconnected and earthing switch 12m is closed, and the gate terminal of gain transistor 16m is directly pulled down to ground, this
It is a kind of more satisfactory ground connection, but some parasitisms can be introduced by earthing switch 12m；The third are as follows: power switch 10m and
Earthing switch 12m is disconnected and earthing switch 13m is closed, and the gate terminal of gain transistor 16m is pulled down via selection resistor 14m
To ground.
To sum up, when there are bypass circuit and when being transmitted by bypass circuit to radiofrequency signal, gain stage transistor 16m
It is grounded using the third described mode.In another embodiment, can there was only earthing switch 13m and no ground switch 12m, that
Bias voltage Vbias is added to the gate terminal of gain transistor 16m via selection resistor 14m, to enable gain transistor
The gate terminal of 16m or gain transistor 16 via selection resistor 14m be pulled down to to be not enabled.In another implementation
In mode, can there was only earthing switch 12m, earthing switch 13m may be not present, then bias voltage Vbias is via selection resistance
Device 14m is added to the gate terminal of gain transistor 16m, straight with the gate terminal for enabling gain transistor 16m or gain transistor 16
Connect be pulled down to to be not enabled.
The low-noise amplifier of belt switch function described in the embodiment of the present invention mainly includes amplification selected on-off circuit
8, coupling circuit 4, gain stage circuit 16, driving stage circuit 20, load circuit 24 and bypass circuit, each section all at least describe
A kind of configuration mode, so a variety of possible circuit structures can be derived.These structures should all be included in protection model of the invention
Within enclosing, but it is not intended to limit the invention.
The low-noise amplifier of belt switch function described in the embodiment of the present invention can IC, RFIC, numerical model analysis IC,
Realized on the various ways such as ASIC, manufacturing process be also possible to CMOS, CMOS SOI, SiGe, GaAs, pHEMT, HBT, BJT,
The kinds of processes such as BiCMOS.
Specific embodiment provided above has carried out further specifically the object, technical solutions and advantages of the present invention
It is bright, it should be understood that described above is only some embodiments of the invention, it is not intended to limit the invention, it is all in this hair
Within bright spirit and principle, any modification, equivalent replacement, improvement and so on should be included in protection scope of the present invention
Within.
Claims (12)
1. a kind of low-noise amplifier with switch, characterized in that including
Gain stage circuit, comprising with the consistent amplifier of radiofrequency signal quantity to be amplified, the amplifier and radiofrequency signal are one by one
Corresponding, the input terminal of the amplifier is used for input radio frequency signal, can carry out independent amplification to every road radiofrequency signal；
Amplify selected on-off circuit, connect with gain stage circuit, can be selected in gain stage circuit according to radiofrequency signal to be amplified
Amplifier so that the determining amplifier of selection can amplify the radiofrequency signal in the gain stage circuit；
The amplification selected on-off circuit include with the consistent amplification selection circuit of amplifier quantity in gain stage circuit, it is described to put
Big selection circuit includes the power switch that one end is connect with bias voltage, and the other end of the power switch passes through selection resistor
It is connected with the input terminal of amplifier corresponding in earthing switch and gain stage circuit, the other end ground connection of earthing switch；
Load circuit for receiving through the amplified radio frequency output signal of gain stage circuit, and is formed and will be put through gain stage circuit
The radiofrequency signal of radio frequency output signal output after big amplifies output end, and the output end of the gain stage circuit passes through driving stage electricity
Road is connect with the load circuit, and the junction of the driving stage circuit and load circuit is radiofrequency signal amplification output
End.
2. it is according to claim 1 with switch low-noise amplifier, it is characterized in that: the gain stage circuit also with
It is connected in the coupling circuit of ground connection.
3. the low-noise amplifier according to claim 1 with switch, it is characterized in that: the amplifier includes gain crystalline substance
Body pipe, when the gain transistor uses metal-oxide-semiconductor, radiofrequency signal is loaded into the gate terminal of gain transistor, and gain transistor
Gate terminal also with amplification selected on-off circuit connect, the drain electrode end of gain transistor is connect with load circuit.
4. the low-noise amplifier according to claim 1 with switch, it is characterized in that: the load circuit includes load
Inductance, load capacitance, load resistance, balun or transistor.
5. the low-noise amplifier according to claim 2 with switch, it is characterized in that: the coupling circuit include coupling
Inductance, the coupling inductance include on-chip inductor, package substrate inductance, discrete device inductance or bondwire inductance.
6. the low-noise amplifier according to claim 1 with switch, it is characterized in that: the driving stage circuit at least one
A driving transistor.
7. the low-noise amplifier according to claim 1 with switch, it is characterized in that: the gain stage circuit is for connecing
It receives between the input terminal of radiofrequency signal and radiofrequency signal amplification output end equipped with for alleviating, radio frequency signal amplitude is excessive to be caused to export
The bypass circuit of distortion, the bypass circuit include the bypass branch consistent with radiofrequency signal quantity to be amplified, the bypass
Branch is correspondingly connected with amplification selected on-off circuit, gain stage circuit；
Bypass branch includes bypass selection switch, one end of the bypass selection switch and amplification selected on-off circuit and gain
Grade circuit connection, the other end of bypass selection switch amplify output end with radiofrequency signal by coupling partition capacitor and connect.
8. it is according to claim 3 with switch low-noise amplifier, it is characterized in that: the gain stage circuit also with
Connected in the coupling circuit of ground connection, the coupling circuit include coupling inductance, the quantity of the coupling inductance be one or with increasing
The quantity of gain transistor is consistent in beneficial grade circuit, and the source terminal of the gain transistor is grounded by coupling inductance.
9. a kind of amplification method using with the low-noise amplifier switched to radiofrequency signal, it is characterized in that: utilizing gain stage
Circuit receives radiofrequency signal to be amplified, includes and the consistent amplification of radiofrequency signal quantity to be amplified in the gain stage circuit
Device, the amplifier and radiofrequency signal correspond, and the input terminal of the amplifier is used for input radio frequency signal, with can be to every road
Radiofrequency signal carries out independent amplification；
Gain stage circuit is selected according to radiofrequency signal to be amplified using the amplification selected on-off circuit connecting with gain stage circuit
Interior amplifier, so that the determining amplifier of selection can amplify the radiofrequency signal in the gain stage circuit；
To the amplified radio frequency output signal of gain stage circuit, the radiofrequency signal amplification output end formed using load circuit is defeated
Out, the output end of the gain stage circuit connect by driving stage circuit with the load circuit, the driving stage circuit with bear
The junction for carrying circuit is that the radiofrequency signal amplifies output end；
Wherein, the amplification selected on-off circuit include with the consistent amplification selection circuit of amplifier quantity in gain stage circuit,
The amplification selection circuit includes the power switch that one end is connect with bias voltage, and the other end of the power switch passes through selection
Resistor is connected with the input terminal of corresponding amplifier in earthing switch and gain stage circuit, another termination of earthing switch
Ground.
10. the amplification method using the low-noise amplifier with switch to radiofrequency signal according to claim 9, feature
Be: the amplification selected on-off circuit selects the quantity for determining amplifier to be less than or equal to the number of amplifier in gain stage circuit included
Amount.
11. the amplification method using the low-noise amplifier with switch to radiofrequency signal according to claim 9, feature
Be: the gain stage circuit is also connect with the coupling circuit for ground connection.
12. the amplification method using the low-noise amplifier with switch to radiofrequency signal according to claim 9, feature
Be: the gain stage circuit is used to receive to be equipped between the input terminal of radiofrequency signal and radiofrequency signal amplification output end and penetrate for alleviating
The excessive bypass circuit for causing output to be distorted of frequency signal amplitude, the bypass circuit include and radiofrequency signal quantity phase one to be amplified
The bypass branch of cause, the bypass branch are correspondingly connected with amplification selected on-off circuit, gain stage circuit；
Bypass branch includes bypass selection switch, one end of the bypass selection switch and amplification selected on-off circuit and gain
Grade circuit connection, the other end of bypass selection switch amplify output end with radiofrequency signal by coupling partition capacitor and connect.
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| CN106160756B (en) * | 2016-06-25 | 2019-12-10 | 唯捷创芯(天津)电子技术股份有限公司 | radio frequency front end transmitting method, transmitting module, chip and communication terminal |
| CN108259050B (en) * | 2016-12-28 | 2020-02-11 | 展讯通信（上海）有限公司 | Radio frequency front-end circuit, radio frequency receiver and user terminal |
| US11881828B2 (en) | 2017-04-04 | 2024-01-23 | Psemi Corporation | Tunable effective inductance for multi-gain LNA with inductive source degeneration |
| US10038418B1 (en) | 2017-04-04 | 2018-07-31 | Psemi Corporation | Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass |
| CN107888153A (en) * | 2017-10-20 | 2018-04-06 | 江苏卓胜微电子股份有限公司 | A kind of low-noise amplifier and the radio frequency amplification method using low-noise amplifier |
| CN112187183A (en) * | 2020-10-14 | 2021-01-05 | 成都振芯科技股份有限公司 | Broadband low-noise amplifier with differential structure |
| CN112511114B (en) * | 2020-12-11 | 2023-02-24 | 重庆西南集成电路设计有限责任公司 | Low-noise amplifier with power distribution function |
| CN113507295B (en) * | 2021-09-13 | 2021-11-19 | 成都明夷电子科技有限公司 | Application method of fully-integrated broadband configurable front end based on SOI CMOS process |
| CN115412039A (en) * | 2022-10-31 | 2022-11-29 | 江苏卓胜微电子股份有限公司 | Low-noise amplifier and radio frequency chip |
| CN115632645B (en) * | 2022-12-08 | 2023-04-14 | 杭州地芯科技有限公司 | Radio frequency switch assembly, operational amplification module and radio frequency communication equipment |
| CN117318636B (en) * | 2023-11-28 | 2024-02-27 | 成都嘉纳海威科技有限责任公司 | High-integration dual-mode amplifier chip |
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