CN112671350B - Low-noise large-bandwidth amplifier - Google Patents
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Abstract
The invention discloses a low-noise large-bandwidth amplifier, comprising: the noise cancellation unit comprises a pair of noise signal cancellation units, each noise signal cancellation unit is provided with an input end and two output ends with opposite polarities, wherein the input ends of the pair of noise signal cancellation units are respectively connected with a pair of differential radio frequency signal input ends and used for receiving a pair of differential radio frequency signals, the output ends of the noise cancellation units are respectively coupled with the radio frequency signal output ends, and each noise cancellation unit amplifies the received radio frequency signals with polarities, amplifies corresponding noise signals with nonpolarities and then respectively outputs the noise signals through the corresponding radio frequency signal output ends; and the center joint of the inductor tap is connected with a power supply, the other joint is divided into two parts which are respectively connected to two output ends with the same polarity of the pair of noise signal eliminating units, and the rest joint and the other joint are respectively connected to the rest two output ends of the pair of noise signal eliminating units. The invention has the beneficial effects of low noise and large bandwidth.
Description
Technical Field
The present invention relates to the field of semiconductors. More particularly, the present invention relates to a low noise, large bandwidth amplifier.
Background
In communication systems, Low Noise Amplifiers (LNAs) are used in large numbers, and the quality of the LNA performance directly affects the quality of the communication system. The design of LNAs in integrated circuits is a typical loop of communication systems and is an important module. A Low Noise Amplifier (LNA), which is a major part of the front end of a radio frequency receiver, is one of the important modules in a radio frequency transceiver.
The technical problem to be solved is to provide a low noise and large bandwidth Low Noise Amplifier (LNA).
Disclosure of Invention
An object of the present invention is to solve at least the above problems and to provide at least the advantages described later.
It is still another object of the present invention to provide a low noise large bandwidth amplifier, which has low power consumption, low noise, large bandwidth, good up-down matching performance, convenient use and design of the amplifier, and further flexible configuration of input and output impedance and flexible gain configuration.
To achieve these objects and other advantages in accordance with the purpose of the invention, there is provided a low noise large bandwidth amplifier including: each noise signal eliminating unit is provided with an input end and two output ends with opposite polarities, wherein the input ends of the pair of noise signal eliminating units are respectively connected with a pair of differential radio frequency signal input ends and used for receiving a pair of differential radio frequency signals, the output ends of the noise eliminating units are respectively coupled with the radio frequency signal output ends, each noise eliminating unit amplifies the received radio frequency signals with polarities, amplifies corresponding noise signals without polarities and then outputs the noise signals through the corresponding radio frequency signal output ends respectively, and each noise signal eliminating unit outputs inverted differential radio frequency signals through the corresponding radio frequency signal output end;
and the center joint of the inductor tap is connected with a power supply, the other joint is divided into two parts which are respectively connected to two output ends with the same polarity of the pair of noise signal eliminating units, and the rest joint and the other joint are respectively connected to the rest two output ends of the pair of noise signal eliminating units.
Preferably, the low noise large bandwidth amplifier further comprises: and the 4 adjustable loads are respectively arranged between the inductor taps and the output end of the noise signal elimination unit in a one-to-one correspondence manner.
Preferably, the pair of differential radio frequency signal inputs comprises a radio frequency signal input RFPA radio frequency signal input terminal RFN；
The pair of noise signal eliminating units comprises a noise signal eliminating unit P and a noise signal eliminating unit N, wherein:
the noise signal eliminating unit P comprises an input terminal and a radio frequency signal input terminal RFPCoupled P-terminal common source amplifier stage, input terminal and radio frequency signal input terminal RFPThe P-end common-gate amplifier stage is used for amplifying an input radio-frequency signal in an inverted phase manner, and the P-end common-gate amplifier stage is used for amplifying the input radio-frequency signal in an in-phase manner;
the noise signal eliminating unit N comprises an input end and a radio frequency signal input end RFNCoupled N-terminal common source amplifier stage, input terminal and radio frequency signal input terminal RFNConnected N-terminal common gate amplificationAnd the N-end common source amplification stage is used for amplifying the input radio-frequency signal in an inverted phase mode, and the N-end common gate amplification stage is used for amplifying the input radio-frequency signal in an in-phase mode.
Preferably, the P-terminal common source amplification stage comprises a transistor M1PTransistor M3PWherein the transistor M1PThe grid of the transistor is the input end of a P-end common source amplification stage, and the transistor M1PIs coupled to the radio frequency signal input terminal RFPSource grounded, drain and transistor M3POf said transistor M, said transistor M3PThe drain of the P-end common source amplifier stage is the output end of the P-end common source amplifier stage;
the P-terminal common-gate amplifier stage comprises a transistor M2PTransistor M4PWherein the transistor M2PThe source of (1) is the input end of a P-end common-gate amplifier stage, a transistor M2PIs connected to the input terminal RFPDrain and transistor M4POf said transistor M, said transistor M4PThe drain electrode of the P-end common-gate amplifier stage is the output end of the P-end common-gate amplifier stage;
the N-terminal common source amplifier stage comprises a transistor M1NTransistor M3NWherein the transistor M1NThe grid of the transistor is the input end of an N-end common source amplification stage, and the transistor M1NIs coupled to the input terminal RFNSource grounded, drain and transistor M3NOf said transistor M, said transistor M3NThe drain of the N-end common source amplifier stage is the output end of the N-end common source amplifier stage;
the N-terminal common-gate amplifier stage comprises a transistor M2NTransistor M4NWherein the transistor M2NThe source of (A) is the input of an N-terminal common-gate amplifier stage, a transistor M2NIs connected to the input terminal RFNDrain and transistor M4NOf said transistor M, said transistor M4NThe drain electrode of the N-end common-gate amplifier stage is the output end of the N-end common-gate amplifier stage;
wherein the transistor M4PAnd said transistor M3PThe gate of (1) is connected; the transistor M4NAnd said transistor M3NIs connected to the gate of (a).
Preferably, the transistor M3PA gate electrode ofTransistor M3NGate of (1), the transistor M4PGate of (1), the transistor M4NThe grid electrodes are all connected with a bias voltage VB3；
The transistor M1PAnd said transistor M1NThe grid electrodes are all connected with a bias voltage VB1Said transistor M2PAnd said transistor M2NThe grid electrodes are all connected with a bias voltage VB2Wherein V isB3Greater than VB1、VB2。
Preferably, the adjustable load is one of a variable resistor or a variable resistor parallel capacitor.
Preferably, the 4 adjustable loads comprise one end and the transistor M3PIs connected with the output end of the adjustable resistor R1POne end and the transistor M4PIs connected with the output end of the adjustable resistor R2POne end and the transistor M3NIs connected with the output end of the adjustable resistor R1NOne end and the transistor M4NIs connected with the output end of the adjustable resistor R2NWherein the transistor M1P、M2P、M3P、M4P、M1N、M2N、M3N、M4NAre respectively gm1P、gm2P、gm3P、gm4P、gm1N、gm2N、gm3N、gm4NAdjustable resistance R1P、R2P、R1N、R2NRespectively is r2P、r1P、r1N、r2NThen gm is1P：gm2P＝gm3P：gm4P＝r2P：r1P，gm1N：gm2N＝gm3N：gm4N＝r2N：r1N。
Preferably, the transistor M1PThe source electrode of the transistor M is connected with the inductor and then grounded1NThe source of the inductor is connected with the inductor and then grounded.
The invention at least comprises the following beneficial effects:
firstly, an inductance tap is used for distributing power, the problem that the bandwidth of an amplifier is limited due to high-frequency attenuation is solved, the bandwidth is widened by using the inductance tap, and the bandwidth can cover more than 6 GHz;
secondly, performing signal differential input and differential output on a pair of noise signal eliminating units, and performing multiple differential design to effectively realize noise elimination and simultaneously realize amplification and impedance matching, specifically, the pair of noise signal eliminating units comprises a noise signal eliminating unit P and a noise signal eliminating unit N, the noise signal eliminating unit P comprises a P-end common source amplifying stage and a P-end common gate amplifying stage, the noise signal eliminating unit N comprises an N-end common source amplifying stage and an N-end common gate amplifying stage, namely, common sources are used as input to realize noise elimination, and the common gates realize amplification and impedance matching;
third, adjust M1PAnd M2PGm (synchronous regulation M)1NAnd M2NGm) can adjust the input impedance, adjust M3PAnd M4PGm (synchronous regulation M)3NAnd M4NGm) may adjust the output impedance to allow for flexible configuration of the input and output impedances to support 50/75/100 impedance matching.
Fourth, adjust R1PAnd R2P(synchronous regulation of R1NAnd R2N) The gain can be adjusted by the load, and the gain can be flexibly configured;
in summary, the LNA has the advantages of low power consumption, low noise, large bandwidth, good up-down matching performance, convenience in use and amplifier design, capability of flexibly configuring input and output impedance and flexibly configuring gain, and is an excellent solution for the on-chip LNA.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
Fig. 1 is a schematic circuit diagram of a low noise large bandwidth amplifier according to one embodiment of the present invention;
FIG. 2 is a schematic circuit diagram of a low noise large bandwidth amplifier according to one embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a low noise large bandwidth amplifier according to one embodiment of the present invention.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
As shown in fig. 1-3, the present invention provides a low noise large bandwidth amplifier, comprising:
each noise signal eliminating unit is provided with an input end and two output ends with opposite polarities, wherein the input ends of the pair of noise signal eliminating units are respectively connected with the pair of differential radio frequency signal input ends and used for receiving a pair of differential radio frequency signals, the output ends of the noise eliminating units are respectively coupled with the radio frequency signal output ends, each noise eliminating unit amplifies the received radio frequency signals with polarities, amplifies corresponding noise signals with nonpolarity and then respectively outputs the noise signals through the corresponding radio frequency signal output ends, and each noise signal eliminating unit outputs reversed-phase differential radio frequency signals through the corresponding radio frequency signal output end;
and the center joint of the inductor tap is connected with a power supply, the other joint is divided into two parts which are respectively connected to two output ends with the same polarity of the pair of noise signal eliminating units, and the rest joint and the other joint are respectively connected to the rest two output ends of the pair of noise signal eliminating units.
In the technical scheme, after passing through a center joint of an inductance tap, a power supply is respectively transmitted to the other two joints of the inductance tap, one joint is divided into two parts and respectively enters two noise elimination units, the other joint is divided into two parts and respectively enters the two noise elimination units, the inductance tap is used for distributing the power supply, the problem that the high frequency attenuation is caused, the bandwidth of an amplifier is limited is solved, the inductance tap is used for expanding the wide bandwidth, and the bandwidth can cover more than 6 GHz;
the pair of noise elimination units are used for canceling noise signals and amplifying radio frequency signals, specifically, each noise signal elimination unit is provided with an input end and two output ends with opposite polarities (the radio frequency signals output to the radio frequency signal output ends are in opposite phases), the output ends of the noise elimination units are respectively coupled with the radio frequency signal output ends through capacitors, a pair of differential radio frequency signal input ends are used for inputting differential radio frequency signals to the input ends of the pair of noise elimination units respectively, the pair of noise signal elimination units are used for receiving a pair of differential radio frequency signals, each noise elimination unit amplifies the received radio frequency signals with polarities, amplifies corresponding noise signals with nonpolarity and then outputs the noise signals through the corresponding radio frequency signal output ends respectively, wherein the amplification with the polarities specifically means that one path of each noise elimination unit obtains a radio frequency output signal with the same phase as the input end of the noise elimination unit, the other path of the noise signal is used for obtaining a radio frequency output signal with a phase opposite to that of the input end of the noise signal, namely, each noise signal eliminating unit outputs an inverted differential radio frequency signal through the corresponding radio frequency signal output end; each noise signal eliminating unit outputs a noise signal as a non-polar signal through a corresponding radio frequency signal output end, and subtraction is carried out after the noise signal enters a subsequent mixer to realize noise reduction; in the using process, a single-end-to-differential (balun) circuit is used for receiving a weak signal from an antenna, and the signal is converted into a differential radio frequency signal which is used as the input of a pair of differential radio frequency signal input ends;
the pair of noise signal eliminating units receive a pair of differential radio frequency signals, each noise eliminating unit amplifies the received radio frequency signals in a polar manner, amplifies corresponding noise signals in a non-polar manner and then outputs the noise signals through corresponding radio frequency signal output ends respectively, wherein the amplification in the polar manner specifically means that one path of each noise eliminating unit obtains a radio frequency output signal with the same phase as the input end of the noise eliminating unit, the other path of each noise eliminating unit obtains a radio frequency output signal with the opposite phase to the input end of the noise eliminating unit, namely each noise signal eliminating unit outputs an inverted differential radio frequency signal through the corresponding radio frequency signal output end; each noise signal eliminating unit outputs a noise signal as a non-polar signal through a corresponding radio frequency signal output end, and subtraction is carried out after the noise signal enters a subsequent mixer to realize noise reduction; by adopting the technical scheme, the power supply is distributed by utilizing the inductance tap, the problem that the bandwidth of the amplifier is limited due to high-frequency attenuation is solved, the bandwidth is widened by utilizing the inductance tap, and the bandwidth can cover more than 6 GHz; the signal differential input and differential output of a pair of noise signal elimination units are realized through multiple differential design, and the signal amplification is realized while the noise elimination is effectively realized.
In another technical solution, the low-noise large-bandwidth amplifier further includes 4 adjustable loads, and the 4 adjustable loads are respectively arranged between the inductor taps and the output ends of the noise signal cancellation unit in a one-to-one correspondence manner. By adopting the scheme, the gain can be adjusted by adjusting the load, and the flexible configuration of the gain is realized.
In another embodiment, the pair of differential RF signal inputs includes RF signal inputs RFPA radio frequency signal input terminal RFN；
The pair of noise signal eliminating units comprises a noise signal eliminating unit P and a noise signal eliminating unit N, wherein:
the noise signal cancellation unit P comprises an input terminal (input terminal of the P terminal common source amplification stage) and a radio frequency signal input terminal RFPA P-terminal common source amplifier stage coupled via a capacitor C1, an input terminal and a radio frequency signal input terminal RFPThe P-terminal common-gate amplifier stage is used for amplifying an input radio-frequency signal in an opposite phase manner, specifically, the input radio-frequency signal is amplified by the P-terminal common-gate amplifier stage and then has a phase opposite to that of the original input radio-frequency signal, the P-terminal common-gate amplifier stage is used for amplifying the input radio-frequency signal in an in-phase manner, specifically, the input radio-frequency signal is amplified by the P-terminal common-gate amplifier stage and then has the same phase as the original input radio-frequency signal, namely, the received radio-frequency signal is amplified in a polar manner by the noise signal elimination unit P to obtain an amplified opposite-phase differential radio-frequency signal;
the noise signal eliminating unit N comprises an input end and a radio frequency signal input end RFNAn N-terminal common source amplifier stage coupled via a capacitor C2, an input terminal and a radio frequency signal input terminal RFNThe N-end common-gate amplifier stage is connected and used for inverting and amplifying an input radio-frequency signal, specifically, the input radio-frequency signal is amplified by the N-end common-gate amplifier stage and then is transmitted to the original outputThe phase of the input radio frequency signal is opposite, the N-terminal common-gate amplifier stage is used for amplifying the input radio frequency signal in the same phase, specifically, the input radio frequency signal is amplified by the N-terminal common-gate amplifier stage and then has the same phase as the original input radio frequency signal, namely, the noise signal eliminating unit N is used for realizing the polar amplification of the received radio frequency signal, and the amplified reverse phase differential radio frequency signal is obtained. By adopting the scheme, the noise signal eliminating unit realizes the polar amplification of the received radio frequency signal to obtain the amplified reversed phase differential radio frequency signal, and simultaneously realizes the non-polar amplification of the noise signal, thereby facilitating the subsequent subtraction noise elimination.
In another technical scheme, the P-terminal common source amplification stage comprises a transistor M1PTransistor M3PWherein the transistor M1PThe grid of the transistor is the input end of a P-end common source amplification stage, and the transistor M1PIs coupled to the radio frequency signal input terminal R through a capacitor C1FPSource grounded, drain and transistor M3POf said transistor M, said transistor M3PThe drain of the P-end common source amplifier stage is the output end of the P-end common source amplifier stage;
the P-terminal common-gate amplifier stage comprises a transistor M2PTransistor M4PWherein the transistor M2PThe source of (1) is the input end of a P-end common-gate amplifier stage, a transistor M2PIs connected to the input terminal RFPDrain and transistor M4POf said transistor M, said transistor M4PThe drain electrode of the P-end common-gate amplifier stage is the output end of the P-end common-gate amplifier stage;
the N-terminal common source amplifier stage comprises a transistor M1NTransistor M3NWherein the transistor M1NThe grid of the transistor is the input end of an N-end common source amplification stage, and the transistor M1NIs coupled to the input terminal R via a capacitor C2FNSource grounded, drain and transistor M3NThe drain of the transistor M3N is the output end of the N-terminal common source amplifier stage;
the N-terminal common-gate amplifier stage comprises a transistor M2NTransistor M4NWherein the transistor M2NThe source of (A) is the input of an N-terminal common-gate amplifier stage, a transistor M2NIs connected to the input terminalRFNDrain and transistor M4NOf said transistor M, said transistor M4NThe drain electrode of the N-end common-gate amplifier stage is the output end of the N-end common-gate amplifier stage;
wherein the transistor M4PAnd said transistor M3PThe gate of (1) is connected; the transistor M4NAnd said transistor M3NThe gate of (1) is connected;
further, the RF signal output terminal comprises two pairs of differential RF signal output terminals, one of which comprises an output terminal OUTPNAnd an output terminal OUTPPThe other pair including an output terminal OUTNNAnd an output terminal OUTNP(ii) a The transistor M3PIs coupled to the output terminal OUTPNSaid transistor M3PIs coupled to the output terminal OUTPPSaid transistor M3NIs coupled to the output terminal OUTNNSaid transistor M3NIs coupled to the output terminal OUTNP,. With this scheme, OUT is an electrical characteristicPPAnd OUTNNHomopolar, OUTPNAnd OUTNPHomopolar; the transistor is an NMOS transistor.
In another technical solution, the transistor M3PGate of (1), the transistor M3NGate of (1), the transistor M4PGate of (1), the transistor M4NThe grid electrodes are all connected with a bias voltage VB3；
The transistor M1PAnd said transistor M1NThe grid electrodes are all connected with a bias voltage VB1Said transistor M2PAnd said transistor M2NThe grid electrodes are all connected with a bias voltage VB2Wherein V isB3Greater than VB1、VB2. With this arrangement, the transistor operates in an amplified state by the setting of the bias voltage.
In another technical solution, the adjustable load is one of a variable resistor or a variable resistor parallel capacitor. By adopting the scheme, the gain is flexibly configured through the setting of the adjustable load.
In another techniqueIn the technical scheme, 4 adjustable loads comprise one end and the transistor M3PIs connected with the output end of the adjustable resistor R1POne end and the transistor M4PIs connected with the output end of the adjustable resistor R2POne end and the transistor M3NIs connected with the output end of the adjustable resistor R1NOne end and the transistor M4NIs connected with the output end of the adjustable resistor R2NWherein the transistor M1P、M2P、M3P、M4P、M1N、M2N、M3N、M4NAre respectively gm1P、gm2P、gm3P、gm4P、gm1N、gm2N、gm3N、gm4NAdjustable resistance R1P、R2P、R1N、R2NRespectively is r2P、r1P、r1N、r2NThen gm is1P：gm2P＝gm3P：gm4P＝r2P：r1P，gm1N：gm2N＝gm3N：gm4N＝r2N：r1N. By adopting the scheme, the noise elimination effect of the circuit is promoted, and the gain balance of the two differential amplification branches in each noise elimination is further promoted.
In another embodiment, the transistor M1PThe source electrode of the transistor M is connected with the inductor and then grounded1NThe source of the inductor is connected with the inductor and then grounded. By adopting the technical proposal, the device has the advantages that,
the number of apparatuses and the scale of the process described herein are intended to simplify the description of the present invention. Applications, modifications and variations of the low noise large bandwidth amplifier of the present invention will be apparent to those skilled in the art.
While embodiments of the invention have been described above, it is not limited to the applications set forth in the description and the embodiments, which are fully applicable in various fields of endeavor to which the invention pertains, and further modifications may readily be made by those skilled in the art, it being understood that the invention is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.
Claims (7)
1. A low noise, high bandwidth amplifier, comprising:
each noise signal eliminating unit is provided with an input end and two output ends with opposite polarities, wherein the input ends of the pair of noise signal eliminating units are respectively connected with a pair of differential radio frequency signal input ends and used for receiving a pair of differential radio frequency signals, the output ends of the noise eliminating units are respectively coupled with the radio frequency signal output ends, each noise eliminating unit amplifies the received radio frequency signals with polarities, amplifies corresponding noise signals without polarities and then outputs the noise signals through the corresponding radio frequency signal output ends respectively, and each noise signal eliminating unit outputs inverted differential radio frequency signals through the corresponding radio frequency signal output end;
the center joint of the inductor tap is connected with a power supply, the other joint is divided into two parts which are respectively connected to two output ends with the same polarity of the pair of noise signal eliminating units, and the rest joint and the other joint are respectively connected to the rest two output ends of the pair of noise signal eliminating units;
the pair of differential radio frequency signal inputs includes a radio frequency signal input RFPA radio frequency signal input terminal RFN；
The pair of noise signal eliminating units comprises a noise signal eliminating unit P and a noise signal eliminating unit N, wherein:
the noise signal eliminating unit P comprises an input terminal and a radio frequency signal input terminal RFPCoupled P-terminal common source amplifier stage, input terminal and radio frequency signal input terminal RFPThe P-end common-gate amplifier stage is used for amplifying an input radio-frequency signal in an inverted phase manner, and the P-end common-gate amplifier stage is used for amplifying the input radio-frequency signal in an in-phase manner;
the noise signal eliminating unit N comprises an input end and a radio frequency signal input end RFNCoupled N-terminal common source amplifier stage, input terminal and radio frequency signal input terminal RFNThe N-terminal common-gate amplifier stage is connected and used for inverting and amplifying input radio-frequency signals, and the N terminalThe common-gate amplifying stage is used for amplifying an input radio-frequency signal in a same phase.
2. The low noise, large bandwidth amplifier of claim 1, further comprising: and the 4 adjustable loads are respectively arranged between the inductor taps and the output end of the noise signal elimination unit in a one-to-one correspondence manner.
3. The low noise, large bandwidth amplifier of claim 2, in which the P-terminal common source amplification stage comprises a transistor M1PTransistor M3PWherein the transistor M1PThe grid of the transistor is the input end of a P-end common source amplification stage, and the transistor M1PIs coupled to the radio frequency signal input terminal RFPSource grounded, drain and transistor M3POf said transistor M, said transistor M3PThe drain of the P-end common source amplifier stage is the output end of the P-end common source amplifier stage;
the P-terminal common-gate amplifier stage comprises a transistor M2PTransistor M4PWherein the transistor M2PThe source of (1) is the input end of a P-end common-gate amplifier stage, a transistor M2PIs connected to the input terminal RFPDrain and transistor M4POf said transistor M, said transistor M4PThe drain electrode of the P-end common-gate amplifier stage is the output end of the P-end common-gate amplifier stage;
the N-terminal common source amplifier stage comprises a transistor M1NTransistor M3NWherein the transistor M1NThe grid of the transistor is the input end of an N-end common source amplification stage, and the transistor M1NIs coupled to the input terminal RFNSource grounded, drain and transistor M3NOf said transistor M, said transistor M3NThe drain of the N-end common source amplifier stage is the output end of the N-end common source amplifier stage;
the N-terminal common-gate amplifier stage comprises a transistor M2NTransistor M4NWherein the transistor M2NThe source of (A) is the input of an N-terminal common-gate amplifier stage, a transistor M2NIs connected to the input terminal RFNDrain and transistor M4NOf said transistor M, said transistor M4NThe drain electrode of the N-end common-gate amplifier stage is the output end of the N-end common-gate amplifier stage;
wherein the transistor M4PAnd said transistor M3PThe gate of (1) is connected; the transistor M4NAnd said transistor M3NIs connected to the gate of (a).
4. A low noise large bandwidth amplifier according to claim 3, wherein said transistor M3PGate of (1), the transistor M3NGate of (1), the transistor M4PGate of (1), the transistor M4NThe grid electrodes are all connected with a bias voltage VB3；
The transistor M1PAnd said transistor M1NThe grid electrodes are all connected with a bias voltage VB1Said transistor M2PAnd said transistor M2NThe grid electrodes are all connected with a bias voltage VB2Wherein V isB3Greater than VB1、VB2。
5. The low noise, large bandwidth amplifier of claim 3, wherein the adjustable load is one of a variable resistor or a variable resistor shunt capacitor.
6. A low noise large bandwidth amplifier according to claim 5, wherein 4 adjustable loads comprise one terminal and said transistor M3PIs connected with the output end of the adjustable resistor R1POne end and the transistor M4PIs connected with the output end of the adjustable resistor R2POne end and the transistor M3NIs connected with the output end of the adjustable resistor R1NOne end and the transistor M4NIs connected with the output end of the adjustable resistor R2NWherein the transistor M1P、M2P、M3P、M4P、M1N、M2N、M3N、M4NAre respectively gm1P、gm2P、gm3P、gm4P、gm1N、gm2N、gm3N、gm4NAdjustable resistance R1P、R2P、R1N、R2NRespectively is r2P、r1P、r1N、r2NThen gm is1P：gm2P＝gm3P：gm4P＝r2P：r1P，gm1N：gm2N＝gm3N：gm4N＝r2N：r1N。
7. A low noise, large bandwidth amplifier according to claim 3, wherein the transistor M is a transistor1PThe source electrode of the transistor M is connected with the inductor and then grounded1NThe source of the inductor is connected with the inductor and then grounded.
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| CN112671350A (en) | 2021-04-16 |
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