CN104535913B - The heat testing method and test system of LED component with built-in temperature detection - Google Patents
The heat testing method and test system of LED component with built-in temperature detection Download PDFInfo
- Publication number
- CN104535913B CN104535913B CN201510014735.4A CN201510014735A CN104535913B CN 104535913 B CN104535913 B CN 104535913B CN 201510014735 A CN201510014735 A CN 201510014735A CN 104535913 B CN104535913 B CN 104535913B
- Authority
- CN
- China
- Prior art keywords
- individual
- temperature
- led component
- component
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Led Devices (AREA)
Abstract
The present invention discloses a kind of heat testing method and test system of the LED component with built-in temperature detection.The present invention is optimized to position of each chip on component by establishing the equation of heat balance of each node, and using a kind of Revised genetic algorithum when being designed to LED multi-chip modules, suitable layout is found out, to reduce the maximum temperature of component；Multiple heat sensors are designed in assembly simultaneously, and they are individually positioned in the higher region of transient temperature in component, with the temperature variations inside detection components；The drive circuit for the LED component with thermal control function being connected with heat sensor is designed, when the temperature of component has exceeded given maximum, then the power supply to component is adjusted so that the temperature of component is reduced.The present invention can be adaptively adjusted supply size of current according to the temperature conditions of component, the temperature of component is maintained in normal range (NR), so as to avoid temperature is too high from being had a strong impact on to LED.
Description
Technical field
The invention belongs to the testing field of LED chip, more particularly to a kind of heat of the LED component with built-in temperature detection
Method of testing and test system.
Background technology
Light emitting diode (Light Emitting Diode, LED) is a kind of extremely competitive novel energy-conserving solid-state light
Source.LED has been realized in true color and high brightness, and produced on the basis of blue led and purple LED from being born so far
White light LEDs, it is achieved thereby that the mankind illuminate the once leap in history.Compared with incandescent lamp and fluorescent lamp, LED has more
Characteristic and advantage, there is the advantages that efficient, energy-conservation, environmental protection, long lifespan, small volume, in backlight, automotive lighting, special type
It is used widely in the fields such as operating illumination, general illumination.LED is the high-quality light that energy-conserving and environment-protective are best suited in current known light source
Source, with LED further development, it would be possible to challenge the leading position of incandescent lamp, fluorescent lamp, Halogen lamp LED etc..
LED photon release comes from transition of the electronics in energy interband.For LED, the electric energy inputted is only about
10% to 30% is converted into luminous energy, and remaining energy is then converted into heat energy, therefore on a very small LED chip area
Higher heat flow density will be produced, such as produces up to 106W/m2Heat flow density.If heat can not be dispersed into environment,
The junction temperature of LED chip will raise.With the rise of junction temperature, the light output of chip will be reduced constantly.
Particularly in recent years, LED is constantly sent out as other electronic devices to miniaturization and high-power direction
Exhibition, high heat flux turn into inevitable, if can not radiate in time, device temperature is too high, will have a strong impact on LED overall performance,
Luminous efficiency is reduced with service life, or even the damage to the linkage interface of chip and mechanical stress etc. can be caused, so as to right
The internal structure of chip produces destruction.Therefore, not only need to consider the output performance of light, Er Qiexu when being designed LED
Consider junction temperature and the radiating of chip.LED reliability and its performance largely depends on whether have well
Thermal design and whether take good cooling measure.
Use to LED, in terms of in general illumination, people need high-power LED light source particularly LED white lights light
Source.The implementation method of large power white light LED mainly has the following two kinds：First, single high-power LED chip is directly encapsulated, such as
In the market existing 1W, 3W even 5W large power white light LED；It is second, more high-power by encapsulating multiple low-power LEDs compositions
LED multi-chip modules.Therefore, a LED multi-chip module is made up of multiple LED chips, and it is two or more
LED chip be connected on a common circuit substrate, and realize the connection of each chip chamber.Here to LED chip therein,
Combined by using different connection in series-parallel, it is possible to achieve a variety of rated voltages and electric current, improve Integral luminous efficiency, drop
Low cost.In practice in order to simplify the complexity in processing, often assume every included in a LED multi-chip module
The power of individual LED chip is identical.The present invention is directed the LED multi-chip modules of general structure, it is that had by some
The LED chip of different capacity is formed, and the power of each LED chip therein can be with identical, can also be different.Risen to be succinct
See, LED multi-chip modules are referred to as LED component below.
To single LED chip, certain heat can be produced with the increase of operating current, LED chip junction temperature will be caused
Change, and LED performance is had an impact, such as cause forward voltage drop change, colour temperature change, wavelength shift, opto-electronic conversion
Efficiency become it is low.Similarly, to the LED component being made up of multiple LED chips, will be produced with the increase of operating current
Substantial amounts of heat, and the performance of LED component is had an impact such as luminous Strong degree is with luminous efficiency.
Therefore, a kind of heat testing method and test system of effective LED component are needed badly.
The content of the invention
The shortcomings that primary and foremost purpose of the present invention is to overcome prior art and deficiency, there is provided one kind has built-in temperature detection
LED component heat testing method.The LED component that the present invention is directed to is LED multi-chip modules.
Another object of the present invention is to provide the Thermal test for realizing the above-mentioned LED component with built-in temperature detection
Method testing system.
The purpose of the present invention is achieved through the following technical solutions：A kind of heat survey of LED component with built-in temperature detection
Method for testing, as shown in figure 1, comprising the following steps：
(1) layout optimization of LED component：To a kind of LED component of given initial configuration, put down by the heat for establishing each node
Weigh equation, and using a kind of Revised genetic algorithum, to each chip, the location in LED component optimizes, and finds out conjunction
Suitable layout, to reduce the maximum temperature of LED component；
(2) design of built-in heat sensor：LED component after step (1) layout optimization is calculated, calculated
The transient temperature of each node location of LED component, obtain the higher node of transient temperature；Several heat are designed in LED component
Sensor, and they are individually positioned in the higher node region of transient temperature in LED component, to detect inside LED component
Temperature variations；
(3) automatic adjusument of LED component temperature：The drive circuit of LED component of the design with thermal control function, its
In, the heat sensor in step (2) is connected with drive circuit；The LED component temperature that heat sensor monitors sends driving to
Circuit, when the temperature of LED component has exceeded given maximum, drive circuit just adjusts supply electric current to LED component, i.e.,
Reduce supply electric current so that the junction temperature of each chip reduces, so that the temperature of whole LED component is reduced.
The equation of heat balance of described each node is specific as follows：It is shown for internal node, equation of heat balance such as formula (A)；
It is shown for straight border node, equation of heat balance such as formula (B)；To with 90 ° of turning boundary node, equation of heat balance such as formula
(C) shown in；
Wherein, i represents the row in LED component, and j represents the row in LED component；U represents temperature, such as Ui+1,jRepresent node (i
+ 1, j) temperature, by that analogy；The ρ of τ=1/, ρ is the heat transfer coefficient between node；ξ is the sizing grid in horizontally and vertically direction
The ratio of size, i.e. ξ=ε/η, ε are the sizing grid size of transverse axis, and η is the sizing grid size of the longitudinal axis；(τ ξ) is node
Thermal conduction resistance between (i+1, j) and node (i, j)；U0For the air themperature in the external world；θ0For perpendicular to the air of orientation substrate with
The coefficient of heat transfer between node (i, j)；U1For the environment temperature of boundary direction；θ1Between the air and node of boundary direction
The coefficient of heat transfer；Vi,jFor node (i, j) within the unit interval caused heat；
The crossover operation of improved adaptive GA-IAGA described in step (1) can select a crosspoint, two crosspoints and
One kind in three kinds of crossover locations such as three crosspoints, while each crossover location is employed respective to individual component value
Selection and adjustment mode produce new individual；
The specific implementation step of improved adaptive GA-IAGA described in step (1) is as follows：
Each node is numbered with 1 to n, each chip location on component is represented with an individual
(i.e. node)；The individual z given to one, using corresponding equation of heat balance group and is solved, and draws each node in the steady state
The temperature value of opening position, (U is designated as so as to obtain the maximum temperature values of all nodesmax)；Being defined as just when H (z) for individual z：
Population is formed by multiple individuals, by the evolution of population, preferably individual, more excellent individual here is obtained and refers to
A kind of placement scheme of the LED component chips with smaller maximum temperature；
The evolutionary generation of population is represented with parameter k, represents that for population, the individual in population B (k) is represented with N for kth with B (k)
Number be population scale, use XiRepresent i-th of individual in population B (k), Xi(i=1,2 ..., N)；
Step 1：The value for putting parameter k is 0, i.e. k=0；
Step 2：Initial population B (0) is generated, method is：Individual is randomly generated, and they are placed in initial population；
Calculate each individual X in initial population B (0)iJust when H (Xi), i=1,2 ..., N；
Step 3：Perform selection operation：To the individual X in current population B (k)iAnd Xj, corresponding point is calculated in their coding
The number that the value of amount differs, uses w hereijRepresent；Calculate function C (wij) value：If wij>σ, then C (wij)=0；If 0<wij
≤ σ, then C (wij)=1-wij/ σ, σ is the normal number of a setting here.It is calculated as follows function L (Xi) value：
L (Xi) value as individual XiIt is new just when H (Xi), i.e., by L (Xi) value be assigned to H (Xi)；
Calculate each individual XiSelect probability R (Xi) as follows：
According to each individual XiSelect probability R (Xi), n times selection operation is carried out to the individual in current population B (k), from
In select individual composition one pairing storehouse Ω；
Step 4：Perform crossover operation：Random pair is carried out to the individual in pairing storehouse Ω, method is：To in pairing storehouse Ω
Each individual, randomly selected from the pairing individual of storehouse Ω remaining N-1 one differ therewith individual match somebody with somebody therewith
It is right.To resulting N number of pairing, crossover operation is carried out to each pairing and generates a new individual Yi, method is as follows：Use XuAnd Xv
Represent two individuals for matching somebody with somebody centering；The number F in crosspoint is first randomly generated, between 1 to 3, i.e., number F scope is
One of F=1,2 and 3；Crossover location is set according to the number F in the crosspoint generated；
To F=1, i.e., the situation in one crosspoint, then 1 to one integer value of random generation between N as crossover location；
Then exchange pairing individual and is adjusted to the value of other one-components in the component value of crossover location；
To F=2, i.e., the situation in two crosspoints, then 1 to the different integer value of random generation two between N as friendship
Vent is put；Then the value of first crossover location of exchange pairing individual and second crossover location, and to other two points
The value of amount is adjusted；
To F=3, i.e., the situation in three crosspoints, then 1 to the different integer value of random generation three between N as friendship
Vent is put；Then exchange pairing individual XuAnd XvIn first crossover location, second crossover location and the 3rd crossover location
On value, and the value of other three components is adjusted；
The N number of new individual Y generated by such as upper typei(i=1,2 ..., N) replaces original N number of in population B (k)
Individual；
Step 5：Carry out mutation operation：1 to one integer γ of random generation between N；It is random from current population B (k)
Select γ individual in ground；To each individual in this γ selected individual, one-component is randomly chosen and to this point
The value of amount enters row variation, and specific method is that the value for the component that the value of the component is selected at random with another swaps；Logical
Cross the γ new individual that this mode is generated and replace the former γ individual selected from population B (k)；
Step 6：Calculate each individual X in current population B (k)iJust when H (Xi), i=1,2 ..., N；
Step 7：Judge whether end condition meets, if not satisfied, then putting k:=k+1, goes to step 3；Otherwise step is gone to
Rapid 8；
Step 8：Export in current population B (k) just when that individual for maximum.
The number of heat sensor described in step (2) is set according to the number of LED chip in LED component；
The circuit structure of heat sensor described in step (2) is as follows：Put including a bipolar transistor, a computing
Big device, an analog-digital converter, resistance etc.；Wherein, bipolar transistor, resistance, operational amplifier and analog-digital converter
It is sequentially connected, i.e., the base signal line of bipolar transistor passes through defeated with one of operational amplifier after being connected with a resistance
Enter end to be connected, the output end of operational amplifier is connected to the input of an analog-digital converter, and the output of the analog-digital converter is
For the value related to temperature；The signal is entered because the signal in the base stage of transistor is very faint, therefore using operational amplifier
Row amplification, spreads out of again afterwards；
Drive circuit described in step (3) is designed using pulse width modulation, and it is by changing work(
The ON time of rate switching tube or deadline make output voltage reach steady to change dutycycle by the adjustment of dutycycle
It is fixed.Concrete implementation step is：To primary voltage, after a kind of effect of bleeder circuit, a kind of error amplifier is sent to
End of oppisite phase, its difference is compared and amplified by error amplifier, produce error signal；Compared again by pulse width modulation
Error signal compared with a kind of triangular wave caused by a kind of oscillator, is finally produced a kind of square wave of variable duty ratio by device
To control the conducting of power tube and cut-off.
The structure of described drive circuit is as follows：Including reference voltage module, light-adjusting module, constant current source module, memory,
Control unit；Control unit is connected with reference voltage module, light-adjusting module, constant current source module and memory etc. respectively, constant-current source
Module connects with memory；
Described reference voltage module provides accurate voltage reference value for the whole drive circuit of LED component, this seed ginseng
The accuracy for examining voltage influences whether the accuracy of drive circuit institute output current, while the whole LED in this reference voltage
The temperature value of the component also side light performance characteristic of the relevant temperature of LED component.Described reference voltage module is preferably
The X60008 voltage sources of Xicor companies production, the voltage source can generate the accurate voltage-reference of 10 continuously adjustabes, its temperature
It is 1ppm/ DEG C to spend coefficient, and it be ± 5mV definitely to initialize precision, and supply electric current be 800nA, have 10mA current source with it is reverse
Electric current, and the sequential short circuit electric current with 80mA.
Described light-adjusting module includes the oscillator unit, sawtooth waveforms generation unit, comparator unit sum being sequentially connected
According to converting unit；The module realizes the change to the forward current in LED component.Here, square wave is believed as caused by oscillator
Number it is fed to sawtooth waveforms generation unit；Sawtooth waveforms generation unit be by constantly control electric capacity with square-wave signal charging with
Electric discharge, square wave is converted into sawtooth waveforms, and it is sent into the negative-phase input of comparator unit；Comparator unit believes input
Number faint difference be amplified so that light-adjusting module output can according to dim signal difference and produce corresponding pulse
Bandwidth modulation signals；Date Conversion Unit is that the signal from comparator unit is carried out shaping and conversion process, is transmitted afterwards
Control unit to drive circuit.
Described constant current source module is used for the constant current driving to LED component, including current source circuit, the signal being sequentially connected
Modulate circuit and feedback control circuit；Wherein current source circuit is a kind of D/A converting circuit, and it is the effect in control unit
The lower voltage for being used to produce certain numerical value；Signal conditioning circuit is for being amplified to the value of the voltage；Feedback control circuit
Operating current according to required for LED, is exported by using signal conditioning circuit to be adaptively adjusted current source circuit
The size of magnitude of voltage.
Temperature value that described memory module is used to gather heat sensor, test data etc. store.It is described
Memory module be SDRAM memory, preferably Hynix companies HY57V641620 chips.Chip HY57V641620
Memory capacity be 4 groups × 16M positions (8M bytes), operating voltage 3.3V, and there are 16 bit data widths.
Described control unit is entered for the course of work such as the collection to temperature, supply, light modulation or the toning of driving current
Row control.Described control unit is preferably single-chip microcomputer；More preferably model PIC16F887 single-chip microcomputer, the single-chip microcomputer are adopted
The Harvard bus structures separated with data/address bus and instruction bus, working frequency can reach 20MHz, instruction cycle 200ns, have
There is the analog-digital converter on 10, eight tunnel, the sampling period is 20 μ s, and with electrification reset, low-voltage reset, house dog protection
Deng anti-interference function.
Described heat sensor is connected by the output end of its operational amplifier with the control unit of the drive circuit.
Realize the test system of the heat testing method of the LED component with built-in temperature detection, including heat sensor and LED
The drive circuit of component；Heat sensor connects with the drive circuit of LED component.
The test system of the heat testing method of the LED component with built-in temperature detection is realized, in addition to：Determine LED groups
The module of each node temperature of part and the module of optimization LED component layout.Determine that the module of each node temperature of LED component is used to determine
The temperature of each node in LED component initial configuration after the temperature of each node and LED component structure optimization；LED component
After the temperature value of each node is input to the module of optimization LED component layout in initial configuration, it is excellent progress to be laid out to LED component
Change；The temperature of each node after LED component structure optimization can determine that the placement location of heat sensor；
The module of described each node temperature of determination LED component, be for by equation of heat balance to every in LED component
Individual node calculates temperature value.
The module of described optimization LED component layout, it is to be used to be had by using a kind of Revised genetic algorithum
There is the placement scheme of the LED component chips of smaller maximum temperature.
The principle of the present invention：
LED thermal characteristic mainly includes the generation of heat, conduction, convection of heat and the diverging of heat of heat etc..Generally
People's LED heat parameter of interest mainly has junction temperature, thermal resistance and case temperature etc..
Thermal resistance is defined as along the ratio between heat-dissipating power in the temperature difference and passage on device heat passage.For single
LED, the temperature difference between some reference point on usual coring piece PN junction and heat passage.Calculating to thermal resistance uses following
Mode：R=(Tj-Tx)/PH.Here R represents thermal resistance, TjThe junction temperature of device under test when being test condition stabilization, TxIt is to specify ring
The reference temperature in border, PHIt is the dissipated power of device under test.
To junction temperature TjIt can be calculated in the following way：Tj=Tj0+△Tj, △ Tj=μ × △ Te.Here Tj0It is to be measured
Device does not apply the initial junction temperature before heating power, △ TjIt is due to be applied with the variations injunction temperature amount caused by heating power, △ Te
It is the variable quantity of temperature sensitive parameter value, μ is to represent △ TjWith △ TeBetween relation constant.
To single led, carried out when it is placed on chip substrate in use, used structure is from the inside to surface comprising such as
Under multilayer：PN junction, metab, chip substrate, radiator etc..Therefore, can be the path representation of single led heat transfer
For：PN junction-metab-chip substrate-radiator-environment.The overall thermal resistances of LED being regarded as to, the thermal resistance of each layer is connected
Result, in the case of no radiator, the entire thermal resistance from PN junction to environment is each layer thermal resistance sum, and it can be expressed as：
Rt=Rp+Rb+Rs, wherein RtRepresent the entire thermal resistance of whole conduction process, RpRepresent the thermal resistance between metab and PN junction, RbTable
Show the thermal resistance between metab and chip substrate, RsRepresent the thermal resistance between chip substrate and environment.
To the LED component being made up of multiple LED chips, due to multiple thermals source (each LED chip here in component be present
All it is a thermal source), the specification of each thermal source is also not quite similar, and heat transfer also be present between each thermal source, because
This thermal characteristics to LED component is more complicated than single led.It is according to each LED chip in component when calculating the thermal resistance of LED component
Connected mode be the circuit structure diagram connected, and the thermal resistance of each LED chip, using the meter for the all-in resistance for seeking resistor network
Step is calculated to carry out.For example, if the specification of each chip is consistent in LED component, and they are sealed in parallel
Fill on one substrate, if not considering the effect of the heat transfer between chip, now calculating of the can to the thermal resistance of LED component
Process is simplified, and obtains the thermal resistance R of LED componentzFor：
Wherein, n is the number of the LED chip in component；Rp1, Rp2..., RpnRepresent the respective thermal resistance of each chip.
General, it is assumed that by the chip mount in LED component on the substrate of one piece of rectangular area.Divided on substrate
Impartial grid, and assume that the position of each mesh point or node (i, j) can place a chip.Here i=1,2 ..., s；
J=1,2 ..., t.The situation of node when table 1 is s=5 and t=5,25 chips now can be at most placed on substrate.Component
In each LED chip can produce certain heat, these hot parts are transmitted to neighbouring unit, and another part passes through convection current quilt
Air is taken away.By the regular hour, thermal balance can be reached between heat generation, heat transfer and convection current cooling effect.
Table 1
| (1,1) | (1,2) | (1,3) | (1,4) | (1,5) |
| (2,1) | (2,2) | (2,3) | (2,4) | (2,5) |
| (3,1) | (3,2) | (3,3) | (3,4) | (3,5) |
| (4,1) | (4,2) | (4,3) | (4,4) | (4,5) |
| (5,1) | (5,2) | (5,3) | (5,4) | (5,5) |
The temperature of each node is solved with equation of heat balance below.Each chip in LED component is at given one section
Interior to reach stable temperature, each chip can push away as a micro unit according to micro unit principle of energy balance
Export the equation of heat balance of each node.To an internal node (i, j), it is assumed that perpendicular to the third dimension direction of substrate be a unit
Length, it is from the heat of node (i+1, j) delivery node (i, j) in the unit interval then：
Wherein, Ui+1,jAnd Ui,jIt is the temperature of node (i+1, j) and node (i, j) respectively；The ρ of τ=1/, here ρ be node it
Between heat transfer coefficient；ξ is the ratio of the sizing grid size in horizontally and vertically direction, i.e. ξ=ε/η, ε is the grid of transverse axis here
Size dimension, η are the sizing grid size of the longitudinal axis；(τ ξ) is the thermal conduction resistance between node (i+1, j) and node (i, j).
Similarly, the heat in delivery nodes (i, j) such as unit interval interior nodes (i-1, j), (i, j+1), (i, j-1) can be respectively obtained
Measure expression.
To LED component, according to being heat convection perpendicular to the third dimension direction of substrate, then imported perpendicular to orientation substrate
The heat of node (i, j) is：
W0=(U0-Ui,j)·θ0·η
The U in above formula0For the air themperature in the external world, θ0For changing between the air of orientation substrate and node (i, j)
Hot coefficient.Node (i, j) is used as a thermal source node, and it can produce certain heat within the unit interval, and the heat is designated as
Vi,j.At steady state, can be obtained according to principle of energy balance：
Wi+1,j+Wi-1,j+Wi,j+1+Wi,j-1+Vi,j+W0=0
I.e.
As above equation of heat balance is to be directed to internal node, to straight border node in practice and with 90 ° of turning
The situation of boundary node is as follows：
1. to the situation of straight border node, if all nodes of jth row are border, for node (i, j), exist
There is (i-1, j), (i, j+1), (i, j-1) etc. imports heat to node (i, j)；Node (i, j) is imported in the absence of there is (i, j+1)
Heat, but now boundary direction can import heat to node (i, j), and the heat is：
W1=(U1-Ui,j)·θ1·η
The U in above formula1For the environment temperature of boundary direction, θ1For the coefficient of heat transfer between the air and node of boundary direction.
Therefore, to straight border node, at steady state, had according to principle of energy balance：
All chip nodes of jth row are illustrated for the situation on border above, to other straight border nodes
Can similarly it be handled.
2. the turning boundary node to having a case that 90 °, if node (i, j) is this boundary node, then it can now make
All nodes for the i-th row are that border all nodes that jth arranges simultaneously are border, by above to the knot of straight border node situation
Fruit, can obtain the equation of heat balance at steady state with 90 ° of turning boundary node is：
Using the analysis to various infinitesimal body nodes above, each LED chip in whole LED component is listed respectively micro-
First body heat balance equation, it is each in the steady state to draw by the solution to equation group so as to form a system of linear equations
Temperature value at node location.
To a LED component being made up of n LED chip, when these chips the location of in assembly (place
Node) when differing, then the temperature value in the steady state at each node location is also different.Calculated underneath with a kind of improved heredity
Method finds out each chip correct position residing on component, that is, finds out suitable layout, and the temperature of component is carried out excellent
Change, to reduce the maximum temperature of component.The calculation process of the algorithm is as shown in Figure 2.
First, the method encoded to individual is as follows.Each node is numbered with 1 to n, with an individual come table
Show each chip location (node) on component.For example, individual z=(53921764810) is represented：Chip 5 is
The position of node 1 is placed on, chip 3 is placed on the position of node 2, and chip 9 is placed on the position of node 3, and the rest may be inferred.
The individual z given to one, using corresponding equation of heat balance group and is solved, and draws each node position in the steady state
The temperature value at place is put, (U is designated as so as to obtain the maximum temperature values of all nodesmax).Being defined as just when H (z) for individual z：
Secondly, population is formed by multiple individuals, it is preferably individual to obtain by the evolution of population, here more excellent
Body is a kind of placement scheme of the LED component chips with smaller maximum temperature.
The evolutionary generation of population is represented with parameter k, represents that for population, the individual in population B (k) is represented with N for kth with B (k)
Number be population scale, use XiRepresent i-th of individual in population B (k), Xi(i=1,2 ..., N).Here N sets for one
Fixed constant, such as N=40.
Be given below it is a kind of ask a kind of more excellent individual Revised genetic algorithum (abbreviation algorithm 1), its calculating process is such as
Under：A kind of chip layout in LED component is regarded as an individual, and this individual is encoded.Simultaneously the suitable of individual z
Value is defined as H (z).
Step 1：The value for putting parameter k is 0, i.e. k=0.
Step 2：Initial population B (0) is generated, method is：Randomly generate the individual in N number of initial population；Calculate initial kind
Each individual X in group B (0)iJust when H (Xi), i=1,2 ..., N.
Step 3：Perform selection operation.To the individual X in current population B (k)iAnd Xj, corresponding point is calculated in their coding
The number that the value of amount differs, uses w hereijRepresent.Calculate function C (wij) value：If wij>σ, then C (wij)=0；If 0<wij
≤ σ, then C (wij)=1-wij/σ.Here σ is the normal number of a setting, such as 1≤σ≤8.It is calculated as follows function L (Xi)
Value：
L (Xi) value as individual XiIt is new just when H (Xi), i.e., by L (Xi) value be assigned to H (Xi)。
Calculate each individual XiSelect probability R (Xi) as follows：
According to each individual XiSelect probability R (Xi), n times selection operation is carried out to the individual in current population B (k), from
In select individual composition one pairing storehouse Ω.
Step 4：Perform crossover operation.Random pair is carried out to the individual in pairing storehouse Ω, method is：To in pairing storehouse Ω
Each individual, randomly selected from the pairing individual of storehouse Ω remaining N-1 one differ therewith individual match somebody with somebody therewith
It is right.
To resulting N number of pairing, crossover operation is carried out to each pairing and generates a new individual Yi, method is as follows：Use Xu
And XvRepresent two individuals for matching somebody with somebody centering；Be first randomly generated the number F in crosspoint, number F scope be 1 to 3 it
Between, i.e. one of F=1,2 and 3；Crossover location is set according to the number F in the crosspoint generated.
It is the situation in a crosspoint to F=1, then 1 to one integer value of random generation between N as crossover location；
Then exchange pairing individual and is adjusted to the value of other one-components in the component value of crossover location.For example, to pairing
Individual Xu=(43921765810) and Xv=(56731024198), if crossover location is 3, the new individual Y generatediFor Yi=
(43721965810)。
It is the situation in two crosspoints to F=2, then 1 to the different integer value of random generation two between N as intersection
Position；Then the value of first crossover location of exchange pairing individual and second crossover location, and to other two components
Value be adjusted.For example, to matching individual Xu=(67139421058) and Xv=(14310895276), if crossover location is 3
With 7, then the new individual Y generatediFor Yi=(67319451028).
It is the situation in three crosspoints to F=3, then 1 to the different integer value of random generation three between N as intersection
Position；Then exchange pairing individual XuAnd XvOn first crossover location, second crossover location and the 3rd crossover location
Value, and the value of other three components is adjusted.For example, to matching individual Xu=(13748105692) and Xv=
(10283694517), if crossover location is 2,4 and 7, then the new individual Y generatediFor Yi=(12738104695).
The N number of new individual Y generated by such as upper typei(i=1,2 ..., N) replaces original N number of in population B (k)
Individual.
Step 5：Carry out mutation operation.1 to one integer γ of random generation between N；It is random from current population B (k)
Select γ individual in ground；To each individual in this γ selected individual, one-component is randomly chosen and to this point
The value of amount enters row variation, and specific method is that the value for the component that the value of the component is selected at random with another swaps.For example,
To individual Xu=(92385610417), first, from individual XuIn randomly selected one-component be its 4th component, this point
The value of amount is 8；Secondly, then from individual XuIn the one-component selected at random be its 9th component, the value of the component is 1；
The new individual Y then generatediFor Yi=(92315610487).
The γ new individual generated in this way is replaced the former γ individual selected from population B (k).
Step 6：Calculate each individual X in current population B (k)iJust when H (Xi), i=1,2 ..., N.
Step 7：Judge whether end condition meets, if not satisfied, then putting k:=k+1, goes to step 3；Otherwise step is gone to
Rapid 8.
Step 8：Export in current population B (k) just when that individual for maximum.Whole algorithm terminates.
The end condition of algorithm 1 is：When the iterations that algorithm is carried out is more than 5000 i.e. k>5000, or recently continuous
Individual in two generation population Bs (k-1) and B (k) does not change, i.e., individual identical in them.
The more excellent individual obtained by algorithm 1, then correspond in a kind of LED component with smaller maximum temperature
The placement scheme of chip.
To LED component, after the optimization by carrying out chip layout, just design in assembly and multiple (be set as m here
It is individual) heat sensor, with the temperature variations inside detection components.Selection to m value, mainly with LED component chips
Number is relevant：If the number of chip is less (being not more than 3), selection m value is smaller, such as m value typically can be taken as 1 extremely
2；If the number of chip is more (be more than 3), choose that m value is just corresponding larger, for example, m value typically can be taken as 3 with
On.
Design to described heat sensor is to have used the following characteristic of bipolar transistor：The base of bipolar transistor
The magnitude of voltage of pole is changed with the change of environment temperature.Drive of the present invention described heat sensor and LED component
Dynamic circuit is attached, and the drive circuit can be controlled to heat caused by LED component.Due to LED component, control
Its luminosity its essence is controlling its luminous flux for being exported, therefore can by control the forward current of LED component come
Its luminosity is controlled, while the junction temperature of LED component and caused heat are reduced by reducing the size of supply electric current.
The present invention is had the following advantages relative to prior art and effect：It is provided by the present invention that there is the inspection of built-in temperature
The heat testing method and test system of survey, LED electric current can be supplied come adaptive regulation according to the temperature conditions of LED component
Size, so as to avoid by the too high caused institute such as luminous efficiency and service life to LED overall performances of temperature
Caused by have a strong impact on.
Brief description of the drawings
Fig. 1 is the flow chart of the heat testing method of the LED component with built-in temperature detection.
Fig. 2 is the calculation flow chart that a kind of improved adaptive GA-IAGA used in the present invention optimizes to LED core chip layout.
Fig. 3 is the structure chart of the drive circuit of the LED component of the present invention.
Fig. 4 is the structure chart of LED component Thermal test system provided by the invention.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment 1
The step of heat testing method of LED component provided by the invention with built-in temperature detection, is as follows：(1) LED groups
The layout optimization of part：When being designed to LED component, each chip is existed by using a kind of Revised genetic algorithum first
Location optimizes on component, suitable layout is found out, to reduce the maximum temperature of component；(2) built-in heat sensor
Design：Multiple heat sensors are designed in assembly, with the temperature variations inside detection components；(3) LED component temperature
Automatic adjusument：Thermal control circuit is designed in the drive circuit of LED component, with the temperature of monitoring assembly, when the temperature of component
When having exceeded given maximum, then the power supply to LED is adjusted the size for reducing supply electric current, makes each chip
Junction temperature reduces, so as to reach the purpose for reducing the temperature of whole LED multi-chip modules.
Below by taking the component being made up of 9 LED chips as an example, illustrate the specific implementation step of the present invention.This 9
LED chip is named as L1, L2 ..., L9, and the heating power of each chip is followed successively by：0.16,0.16,0.34,0.82,1.15,
0.25,0.25,0.47,0.34.
Step (1)：The chip mount in LED component on the substrate of one piece of rectangular area.Divided on substrate
Deng grid, and place a chip on the position of each mesh point or node (i, j), i=1 here, 2,3；J=1,2,3
(as shown in table 2).Each LED chip in assembly can produce certain heat, and these hot parts are transmitted to neighbouring list
Member, another part are taken away by convection current by air.
Table 2
| (1,1) | (1,2) | (1,3) |
| (2,1) | (2,2) | (2,3) |
| (3,1) | (3,2) | (3,3) |
Step (2)：To a kind of given layout on LED chip in assembly, the equation of heat balance of each node is established,
List micro unit equation of heat balance respectively to each LED chip in whole LED component, and form a system of linear equations.
Step (3)：The system of linear equations obtained by second step is solved using over-relaxation iterative method, drawn in the steady state
Temperature value at each node location.
Step (4)：A kind of chip layout in LED component is regarded as an individual, and this individual is encoded.Together
When individual z just when being defined as H (z).
Step (5)：A more excellent individual is calculated and obtains using algorithm 1 above, the more excellent individual corresponds to a kind of tool
There is the placement scheme of the LED component chips of smaller maximum temperature.In algorithm 1 calculate population each individual just when
When, use the result of step (3).
Step (6)：To the component being made up of 9 LED chips, by as above the step of (2) to step (5) processing it
Afterwards, a kind of resulting preferably placement scheme is (379182465), as shown in table 3.
Table 3
| L3 | L7 | L9 |
| L1 | L8 | L2 |
| L4 | L6 | L5 |
Step (7)：On the basis of being laid out obtained by by step (6), each node (i, j) position on substrate is calculated
Transient temperature, i=1 here, 2,3；J=1,2,3.Now calculated transient temperature value is that three higher node locations are
(2,2), (3,1) and (3,3).
Step (8)：Three heat sensors are designed, and they are individually positioned in where node (2,2), (3,1) and (3,3)
Region.Here, the circuit structure of heat sensor is mainly made up of such as lower part：One bipolar transistor, a computing
Amplifier, an analog-digital converter, resistance etc..The base signal line of bipolar transistor, resistance and operational amplifier
Input is sequentially connected, and the output end of operational amplifier connects with the input of analog-digital converter, the output of the analog-digital converter
Value as related to temperature.Here because the signal in the base stage of transistor is very faint, therefore using operational amplifier this
Signal is amplified, and is spread out of again afterwards.
Step (9)：Design the drive circuit of LED component.The function of the drive circuit is when the temperature of component has exceeded institute
During given maximum, then the power supply to LED is adjusted the size for reducing supply electric current, subtracts the junction temperature of each chip
It is small, so that the temperature of whole LED component is reduced.The structure of the drive circuit of LED component is as shown in Figure 3：Control unit
It is connected respectively with reference voltage module, light-adjusting module, constant current source module and memory, constant current source module connects with memory.
Step (10)：By as above the step of (1) to step (9), just complete the chip layout to LED component and test
The Thermal test system of the design of structure, on this basis can structure LED component, the structure of the test system are as shown in Figure 4.
It is as follows to the specific implementation step (job step) of the test system：
(1) switch of drive circuit is opened, is switched on power.
(2) control unit in drive circuit is carried out to the parameter of reference voltage module, light-adjusting module, constant current source module etc.
Initialization.
(3) drive circuit produces the electric current of certain numerical value, and is applied to the input of LED component.
(4) LED component sends the light of some strength, and along with the certain heat of generation.
(5) heat caused by the heat sensor detection in LED component, and send the temperature value of LED component to driving
The control unit of circuit.
(6) control unit calculates the maximum for the temperature value that each heat sensor is transmitted, when the value has exceeded one
During value set in advance, then the power supply to LED component is adjusted the size for reducing supply electric current, can so reduce each
The junction temperature of chip, and the temperature of whole LED component is reduced, so that the temperature of LED component is maintained in normal scope.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (7)
1. a kind of heat testing method of the LED component with built-in temperature detection, it is characterised in that comprise the following steps：
(1) layout optimization of LED component：To a kind of LED component of given initial configuration, by the thermal balance side for establishing each node
Journey, and to each chip, the location in LED component optimizes using a kind of Revised genetic algorithum, it is suitable to find out
Layout, to reduce the maximum temperature of LED component；
(2) design of built-in heat sensor：LED component after step (1) layout optimization is calculated, calculates LED groups
The transient temperature of each node location of part, obtain the higher node of transient temperature；Several heat sensings are designed in LED component
Device, and they are individually positioned in the higher node region of transient temperature in LED component, to detect the temperature inside LED component
Situation of change；
(3) automatic adjusument of LED component temperature：The drive circuit of LED component of the design with thermal control function, wherein, will
Heat sensor in step (2) is connected with drive circuit；The LED component temperature that heat sensor monitors sends drive circuit to,
When the temperature of LED component has exceeded given maximum, drive circuit just adjusts supply electric current to LED component, that is, reduces
Supply the size of electric current so that the junction temperature of each chip reduces, so that the temperature of whole LED component is reduced；
The crossover operation of genetic algorithm described in step (1) is one crosspoint of selection, two crosspoints and three crosspoints
In one kind, while it is new to produce that the respective selection to individual component value and adjustment mode are employed to each crossover location
Individual；
The concrete operation step of genetic algorithm described in step (1) is as follows：
The evolutionary generation of population is represented with parameter k, represents that for population, the individual number in population B (k) is represented with N for kth with B (k)
Mesh is the scale of population, uses XiRepresent i-th of individual in population B (k), Xi(i=1,2, N)；
Step 1：The value for putting parameter k is 0, i.e. k=0；
Step 2：Initial population B (0) is generated, method is：Individual is randomly generated, and they are placed in initial population；Calculate
Each individual X in initial population B (0)iJust when H (Xi), i=1,2, N；
Step 3：Perform selection operation：To the individual X in current population B (k)iAnd Xj, calculate respective components in their coding
The number that value differs, uses w hereijRepresent；Calculate function C (wij) value：If wij＞ σ, then C (wij)=0；If 0 ＜ wij≤
σ, then C (wij)=1-wij/ σ, σ is the normal number of a setting here；It is calculated as follows function L (Xi) value：
<mrow>
<mi>L</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>X</mi>
<mi>i</mi>
</msub>
<mo>)</mo>
</mrow>
<mo>=</mo>
<mi>H</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>X</mi>
<mi>i</mi>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<munderover>
<mo>&Sigma;</mo>
<mrow>
<mi>j</mi>
<mo>=</mo>
<mn>1</mn>
</mrow>
<mi>N</mi>
</munderover>
<mi>C</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>w</mi>
<mrow>
<mi>i</mi>
<mi>j</mi>
</mrow>
</msub>
<mo>)</mo>
</mrow>
</mrow>
L (Xi) value as individual XiIt is new just when H (Xi), i.e., by L (Xi) value be assigned to H (Xi)；
Calculate each individual XiSelect probability R (Xi) as follows：
<mrow>
<mi>R</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>X</mi>
<mi>i</mi>
</msub>
<mo>)</mo>
</mrow>
<mo>=</mo>
<mi>H</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>X</mi>
<mi>i</mi>
</msub>
<mo>)</mo>
</mrow>
<mo>/</mo>
<munderover>
<mo>&Sigma;</mo>
<mrow>
<mi>j</mi>
<mo>=</mo>
<mn>1</mn>
</mrow>
<mi>N</mi>
</munderover>
<mi>H</mi>
<mrow>
<mo>(</mo>
<msub>
<mi>X</mi>
<mi>j</mi>
</msub>
<mo>)</mo>
</mrow>
</mrow>
According to each individual XiSelect probability R (Xi), n times selection operation, Cong Zhongxuan are carried out to the individual in current population B (k)
Go out one pairing storehouse Ω of individual composition；
Step 4：Perform crossover operation：Random pair is carried out to the individual in pairing storehouse Ω, method is：To every in pairing storehouse Ω
An individual, from pairing storehouse Ω remaining N-1 it is individual in randomly select one differ therewith it is individual paired；It is right
Resulting N number of pairing, crossover operation is carried out to each pairing and generates a new individual Yi, method is as follows：Use XuAnd XvRepresent one
Individual two individuals with centering；It is first randomly generated the number F in crosspoint, number F scope is the i.e. F=1 between 1 to 3,2
With one of 3；Crossover location is set according to the number F in the crosspoint generated；
To F=1, i.e., the situation in one crosspoint, then 1 to one integer value of random generation between N as crossover location；Then
Exchange pairing individual and is adjusted to the value of other one-components in the component value of crossover location；
To F=2, i.e., the situation in two crosspoints, then 1 to the different integer value of random generation two between N as intersection position
Put；Then the value of first crossover location of exchange pairing individual and second crossover location, and to other two components
Value is adjusted；
To F=3, i.e., the situation in three crosspoints, then 1 to the different integer value of random generation three between N as intersection position
Put；Then exchange pairing individual XuAnd XvOn first crossover location, second crossover location and the 3rd crossover location
Value, and the value of other three components is adjusted；
The N number of new individual Y generated by such as upper typei(i=1,2, N) replaces original N number of in population B (k)
Individual；
Step 5：Carry out mutation operation：1 to one integer γ of random generation between N；Randomly selected from current population B (k)
Go out γ individual；To each individual in this γ selected individual, one-component is randomly chosen and to the component
It is worth into row variation, specific method is that the value for the component that the value of the component is selected at random with another swaps；Passing through this
The γ new individual that kind mode is generated replaces the former γ individual selected from population B (k)；
Step 6：Calculate each individual X in current population B (k)iJust when H (Xi), i=1,2, N；
Step 7：Judge whether end condition meets, if not satisfied, then putting k:=k+1, goes to step 3；Otherwise step 8 is gone to；
Step 8：Export in current population B (k) just when that individual for maximum.
2. the heat testing method of the LED component according to claim 1 with built-in temperature detection, it is characterised in that：
The circuit structure of heat sensor described in step (2) is：Bipolar transistor, resistance, operational amplifier and modulus turn
Parallel operation is sequentially connected.
3. the heat testing method of the LED component according to claim 1 with built-in temperature detection, it is characterised in that：
The structure of drive circuit described in step (3) is as follows：Including reference voltage module, light-adjusting module, constant current source module, deposit
Memory modules and control unit；Control unit respectively with reference voltage module, light-adjusting module, constant current source module and memory module
Connection, constant current source module connect with memory module.
4. the heat testing method of the LED component according to claim 3 with built-in temperature detection, it is characterised in that：Institute
The reference voltage module stated is X60008 voltage sources, and described memory module is SDRAM memory, and described control unit is
Single-chip microcomputer.
5. realize the test of the heat testing method of the LED component with built-in temperature detection described in any one of Claims 1 to 4
System, it is characterised in that：Including heat sensor, LED component drive circuit, determine each node temperature of LED component module and
Optimize the module of LED component layout；Heat sensor connects with the drive circuit of LED component；Determine each node temperature of LED component
Module is used for the temperature for determining the temperature of each node in LED component initial configuration and each node after LED component structure optimization；
, can be to LED component after the temperature value of each node in LED component initial configuration being input to the module of optimization LED component layout
Layout optimizes；The temperature of each node after LED component structure optimization can determine that the placement location of heat sensor.
6. test system according to claim 5, it is characterised in that：Each node temperature in described determination LED component
Module is to calculate temperature value to each LED chip by using equation of heat balance.
7. test system according to claim 5, it is characterised in that：The module of described optimization LED component layout is logical
Cross using a kind of Revised genetic algorithum to obtain the placement scheme of the LED component chips with smaller maximum temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510014735.4A CN104535913B (en) | 2015-01-12 | 2015-01-12 | The heat testing method and test system of LED component with built-in temperature detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510014735.4A CN104535913B (en) | 2015-01-12 | 2015-01-12 | The heat testing method and test system of LED component with built-in temperature detection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104535913A CN104535913A (en) | 2015-04-22 |
| CN104535913B true CN104535913B (en) | 2017-12-19 |
Family
ID=52851475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014735.4A Expired - Fee Related CN104535913B (en) | 2015-01-12 | 2015-01-12 | The heat testing method and test system of LED component with built-in temperature detection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104535913B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115329710B (en) * | 2022-08-26 | 2023-08-29 | 苏州大学 | Heat pipe constraint assembly layout optimization method based on genetic algorithm |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004047682A1 (en) * | 2004-09-30 | 2006-04-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | LED array |
| US7414370B2 (en) * | 2006-02-03 | 2008-08-19 | Honeywell International Inc. | Increasing reliability of operation of light emitting diode arrays at higher operating temperatures and its use in the lamps of automobiles |
| CN100435349C (en) * | 2006-10-26 | 2008-11-19 | 友达光电股份有限公司 | Active organic LED panel and control method thereof |
| CN101498435A (en) * | 2008-01-30 | 2009-08-05 | 富士迈半导体精密工业（上海）有限公司 | Luminous diode lighting device and method for reducing heating power thereof |
| US9781803B2 (en) * | 2008-11-30 | 2017-10-03 | Cree, Inc. | LED thermal management system and method |
| CN201955457U (en) * | 2010-12-09 | 2011-08-31 | 西安中科麦特电子技术设备有限公司 | Novel LED switching power supply test system |
| CN102883506B (en) * | 2012-09-21 | 2014-10-29 | 东南大学 | Method for dynamically controlling temperature of central area of array light emitting diode (LED) lighting lamp |
-
2015
- 2015-01-12 CN CN201510014735.4A patent/CN104535913B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN104535913A (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103369786B (en) | For driving the circuit of LED | |
| Chen et al. | Chromatic, photometric and thermal modeling of LED systems with nonidentical LED devices | |
| CN104748885A (en) | Method for measuring LED (Light Emitting Diode) junction temperature based on I-V feature curve | |
| CN102356478B (en) | Method and numerical tool for optimizing light emitting diode systems | |
| CN103995223A (en) | Method and apparatus for measuring thermal characteristic of LED | |
| CN101699235A (en) | Analysis and test system and test method for junction temperature of semiconductor lamp | |
| CN105843979B (en) | The measurement method of chip chamber thermal coupling and junction temperature distribution in a kind of LED multi-chip module | |
| CN205883648U (en) | LED both ends constant current drive chip | |
| CN107944190A (en) | High-power LED lamp life-span prediction method based on artificial neural network | |
| Poppe et al. | Creating multi-port thermal network models of LED luminaires for application in system level multi-domain simulation using Spice-like solvers | |
| CN104470096B (en) | LED driving circuit | |
| CN104535913B (en) | The heat testing method and test system of LED component with built-in temperature detection | |
| Fan et al. | Dynamic prediction of optical and chromatic performances for a light-emitting diode array based on a thermal-electrical-spectral model | |
| CN107660013B (en) | LED two-end constant-current driving chip and constant-current driving method | |
| Cao et al. | Predicting of luminous flux for a LED array using artificial neural network | |
| CN201821552U (en) | LED constant current driving circuit | |
| US9131559B2 (en) | Heat dissipating method for light emitting diode and lighting device using same | |
| Qiu et al. | Compact modeling of electrical LED module for analysis of LED driver system | |
| CN102160462B (en) | Led actuating device | |
| CN106937440A (en) | A kind of LED perseverances photoelectric current drive control method | |
| CN109496040A (en) | Great power LED linear constant current drive control chip | |
| CN106102255B (en) | Simulate filament impedances circuit, LED lamp tube and LED illumination System | |
| CN108170916A (en) | Utilize the LED chip spatial arrangement optimization method of photoelectric heat coupled wave theory | |
| CN106714368B (en) | A kind of New LED drive control method | |
| Guo et al. | Research on LED temperature characteristic and thermal analysis at low temperatures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171219 Termination date: 20220112 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |