CN104183651B - A kind of gallium nitride half floating boom power device and manufacture method thereof - Google Patents
A kind of gallium nitride half floating boom power device and manufacture method thereof Download PDFInfo
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- CN104183651B CN104183651B CN201410402668.9A CN201410402668A CN104183651B CN 104183651 B CN104183651 B CN 104183651B CN 201410402668 A CN201410402668 A CN 201410402668A CN 104183651 B CN104183651 B CN 104183651B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 238000007667 floating Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000005755 formation reaction Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 82
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910004682 ON-OFF Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 201000005206 focal segmental glomerulosclerosis Diseases 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Abstract
The invention belongs to gallium nitride power device arts, be specially a kind of gallium nitride half floating boom power device and manufacture method thereof.The gallium nitride half floating boom power device of the present invention includes the first groove in gallium nitride channel layer and the second groove, gate dielectric layer covers the inner surface of the first groove and is come out by the second groove, and floating boom covers the first groove and the second groove and contacts formation Schottky diode in the second groove with gallium nitride channel layer.The gallium nitride half floating boom power unit structure of the present invention is simple, easily fabricated, and the double recess of the present invention can improve gallium nitride half floating boom power device in working order time threshold voltage so that it is can preferably use as power switch pipe.
Description
Technical field
The invention belongs to semiconductor power device technology field, particularly relate to a kind of gallium nitride half floating boom power device and manufacture method thereof.
Background technology
The broad stopband device such as GaN high electron mobility transistor of high electron mobility has the advantages such as high temperature resistant, high efficiency, high speed relative to traditional silicon device, is widely used.At present, the GaN high electron mobility devices difficult of 600V makes normally-off, even if making normally-off device, its threshold voltage, also close to 0V, is easily opened by mistake and opens.Therefore the gallium nitride power switch of 600V is generally made up of an open type GaN high electron mobility transistor device and a normally-off silicon-based devices cascade connected mode.
The gallium nitride power on-off circuit of known cascade is as it is shown in figure 1, include the open type gallium nitride transistor (M of cascode configuration in FIGGaN)
With normally-off silicon-based MOS transistor (MSi), wherein, silicon-based MOS transistor (MSi) controlled by gate drivers on one's own initiative, gate drivers produces signal (VGM).Gallium nitride transistor (MGaN) it is indirectly by silicon-based MOS transistor (MSi) control, because silicon-based MOS transistor (MSi) dram-source voltage equal to gallium nitride transistor (MGaN) source-gate voltage.The advantage of the gallium nitride power switch of cascade is to use the gate drivers of existing standard, and therefore the gallium nitride power switch of cascade can be used to directly replace silicon-based MOS transistor switch.But the gallium nitride power of cascade switchs by open type gallium nitride transistor (MGaN)
With normally-off silicon-based MOS transistor (MSi) composition, structure is complicated, and the reliability of the gallium nitride power of cascade switch is the highest.First the gallium nitride transistor of cascade switchs when dynamic avalanche, and the normally-off silicon-based MOS transistor of low pressure is the most breakdown；Secondly, gallium nitride transistor, owing to there is potential pulse in dynamic operation, therefore there is also the problems such as breakdown, grid pn-junction reverse-conducting.
Summary of the invention
It is an object of the invention to provide a kind of gallium nitride half floating boom power device, it is possible to simplify the structure of gallium nitride power device and improve its reliability.
The gallium nitride half floating boom power device that the present invention provides, including:
Gallium nitride barrier layer on semiconductor base, is provided with gallium nitride channel layer on this gallium nitride barrier layer, is provided with aluminum gallium nitride sealing coat on this gallium nitride channel layer；
Being provided with the first groove and the second groove in described aluminum gallium nitride channel layer, the bottom of this first groove and the second groove extends to the lower surface of described gallium nitride channel layer, and described first groove and the second groove are come out by described aluminum gallium nitride sealing coat；
Being provided with gate dielectric layer on described aluminum gallium nitride sealing coat, this gate dielectric layer covers the inner surface of described first groove, and is provided with a floating boom opening in this gate dielectric layer, and described second groove is come out by this floating boom opening；
Covering described gate dielectric layer and be provided with floating boom, this floating boom fills up described first groove and the second groove；
It is provided with interlayer dielectric layer on described floating boom, on this interlayer dielectric layer, is provided with control gate；
The both sides of described control gate are provided with source electrode and drain electrode, and this source electrode and drain electrode are located on described gallium nitride channel layer, and this drain electrode is provided close to the side of described first groove, and this source electrode is provided close to the side of described second groove.
The further preferred scheme of a kind of gallium nitride half floating boom power device of the present invention is:
The material of floating boom of the present invention is chromium or the nickeliferous or alloy of tungstenic or the polysilicon of doping.
Floating boom of the present invention contacts with described gallium nitride channel layer and forms Schottky diode in described second groove.
Interlayer dielectric layer of the present invention is one or more in silicon oxide, silicon nitride, silicon oxynitride.
Control gate of the present invention is polysilicon control grid or metal control gate.
Manufacture method based on above-mentioned a kind of gallium nitride half floating boom power device, concrete steps include:
Sequentially form gallium nitride barrier layer, gallium nitride channel layer and aluminum gallium nitride sealing coat on a semiconductor substrate；
Carry out photoetching and etching, in described gallium nitride channel layer, form the first groove and the second groove；
Depositing one layer of gate dielectric layer and carry out photoetching and etching, forming a floating boom opening in described gate dielectric layer, described second groove is come out by this floating boom opening；
Cover the structure of above-mentioned formation, deposit ground floor conductive film；
Ground floor insulation film is formed on described ground floor conductive film；
Second layer conductive film is formed on described ground floor insulation film；
Carry out photoetching and be sequentially etched described second layer conductive film, ground floor insulation film and ground floor conductive film, being formed and cover described first groove and the floating boom of the second groove and be positioned at the interlayer dielectric layer on floating boom and control gate；
The source electrode contacted with described gallium nitride channel layer and drain electrode it is respectively formed in the both sides of described control gate.
The present invention compared with prior art its remarkable advantage is: first, the gallium nitride half floating boom power device of the present invention is formed with the first groove and the second groove in gallium nitride channeled layer, floating boom covers the first groove and the second groove and contacts formation Schottky diode in the second groove with gallium nitride channel layer, thus form half FGS floating gate structure, the gallium nitride half floating boom power device making a present invention just can realize the function of two transistors of cascade connected mode, simplifies the structure of semiconductor power device.Secondly, first groove of the present invention and the second groove structure can improve gallium nitride half floating boom power device in working order time threshold voltage so that it is preferably can use as power switch pipe, and improve the reliability of gallium nitride half floating boom power device.
Accompanying drawing explanation
Fig. 1 is the gallium nitride power on-off circuit schematic diagram of a kind of cascade of prior art.
Fig. 2 is the sectional structure chart of an embodiment of the gallium nitride half floating boom power device that the present invention proposes.
Fig. 3-Fig. 5 is the manufacturing process flow diagram of an embodiment of the gallium nitride half floating boom power device that the present invention proposes.
Detailed description of the invention
For clearly demonstrating the detailed description of the invention of the present invention, in Figure of description, listed diagram, is exaggerated the thickness in layer of the present invention and region, and listed feature size does not represent actual size；Accompanying drawing is schematic, should not limit the scope of the present invention.In description, listed embodiment should not be limited only to the given shape in region shown in accompanying drawing, but include that obtained shape such as manufactures the deviation that causes etc., etching the curve obtained is generally of bending or mellow and full feature for another example, but the most all represent with rectangle.The most in the following description, the term substrate used can be understood as including the just semiconductor wafer in processes, potentially includes other prepared thereon thin layer.
With embodiment, the detailed description of the invention of the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 2 is the sectional structure chart of an embodiment of the gallium nitride half floating boom power device that the present invention proposes, as shown in Figure 2, the gallium nitride half floating boom power device of the present invention, including the gallium nitride barrier layer 12 on semiconductor base 11, semiconductor base 11 usually silicon substrate.It is provided with gallium nitride channel layer 14 on gallium nitride barrier layer 12, on this gallium nitride channel layer 14, is provided with aluminum gallium nitride sealing coat 15.
Being provided with the first groove and the second groove in aluminum gallium nitride channel layer 14, the bottom of this first groove and the second groove extends to the lower surface of described gallium nitride channel layer, and this first groove and the second groove are come out by aluminum gallium nitride sealing coat 15；Being provided with gate dielectric layer 501 on aluminum gallium nitride sealing coat 15, this gate dielectric layer 501 covers and is provided with a floating boom opening in the inner surface of described first groove, and this gate dielectric layer 501, and described second groove is come out by this floating boom opening.
Covering gate dielectric layer 501 and be provided with floating boom 103, this floating boom 103 fills up described first groove and the second groove.In described first groove, gate dielectric layer 501 is by the inner surface isolation of floating boom 103 with described first groove；In described second groove, floating boom 103 contacts with gallium nitride channel layer 14 and forms Schottky diode.The material of floating boom 501 is usually chromium or the nickeliferous or alloy of tungstenic or the polysilicon of doping.
On floating boom 501, it is provided with interlayer dielectric layer 502, on this interlayer dielectric layer 502, is provided with control gate 104；One or more in interlayer dielectric layer 502 usually silicon oxide, silicon nitride, silicon oxynitride, control gate 104 usually polysilicon control grid or the one of metal control gate.
Be provided with source electrode 101 and drain electrode 102 in the both sides of control gate 104, this source electrode 101 and drain electrode 102 are located on described gallium nitride channel layer 14, and this drain electrode 102 is provided close to the side of described first groove, and this source electrode 101 is provided close to the side of described second groove.Grid curb wall 60 is silicon oxide or silicon nitride, for structure general in semiconductor device, is used for isolating floating boom 103 and control gate 104 with other conductive layer.(being perpendicular to paper) width of usual second groove, less than the width of device active region, so makes the raceway groove of this device with high electron mobility can be effectively connected to source electrode 101.
Fig. 3-Fig. 5 is the manufacturing process flow diagram of an embodiment of the gallium nitride half floating boom power device that the present invention proposes.
First, as shown in Figure 3, semiconductor base 11 sequentially forms gallium nitride barrier layer 12, gallium nitride channel layer 14 and aluminum gallium nitride sealing coat 15, carry out photoetching afterwards and be sequentially etched aluminum gallium nitride sealing coat 15 and gallium nitride channel layer 14, in gallium nitride channel layer 14, forming the first groove 701 and the second groove 702.
Next, as shown in Figure 4, cover structure one layer of gate dielectric layer 501 of deposit of above-mentioned formation and carry out photoetching and etching, a floating boom opening 703 is formed in gate dielectric layer 501, the A/F of this floating boom opening 703 is more than the A/F of the second groove 702, thus the second groove 702 is come out by floating boom opening 703.
Next, as shown in Figure 5, cover structure deposit ground floor conductive film, ground floor insulation film and the second layer conductive film of above-mentioned formation, carry out photoetching afterwards and be sequentially etched described second layer conductive film, ground floor insulation film and ground floor conductive film, being formed and cover described first groove and the floating boom 103 of the second groove and be positioned at the interlayer dielectric layer 502 on floating boom 103 and control gate 104.
Finally, the technique known to industry is utilized to be respectively formed in the source electrode contacted with described gallium nitride channel layer in the both sides of control gate 104 and drain.
In the detailed description of the invention of the present invention, all explanations not related to belong to techniques known, refer to known technology and are carried out.
Above detailed description of the invention and embodiment are the concrete supports to a kind of half floating boom power device technology thought that the present invention proposes; protection scope of the present invention can not be limited with this; every technological thought proposed according to the present invention; the any equivalent variations done on the basis of the technical program or the change of equivalence, all still fall within the scope of technical solution of the present invention protection.
Claims (6)
1. a gallium nitride half floating boom power device, including:
Gallium nitride barrier layer on semiconductor base, is provided with gallium nitride channel layer on this gallium nitride barrier layer, is provided with aluminum gallium nitride sealing coat on this gallium nitride channel layer；
It is characterized in that；
Being provided with the first groove and the second groove in described aluminum gallium nitride channel layer, the bottom of this first groove and the second groove extends to the lower surface of described gallium nitride channel layer, and described first groove and the second groove are come out by described aluminum gallium nitride sealing coat；
Being provided with gate dielectric layer on described aluminum gallium nitride sealing coat, this gate dielectric layer covers the inner surface of described first groove, and is provided with a floating boom opening in this gate dielectric layer, and described second groove is come out by this floating boom opening；
Covering described gate dielectric layer and be provided with floating boom, this floating boom fills up described first groove and the second groove；
It is provided with interlayer dielectric layer on described floating boom, on this interlayer dielectric layer, is provided with control gate；
The both sides of described control gate are provided with source electrode and drain electrode, and this source electrode and drain electrode are located on described gallium nitride channel layer, and this drain electrode is provided close to the side of described first groove, and this source electrode is provided close to the side of described second groove.
Gallium nitride half floating boom power device the most according to claim 1, it is characterised in that the material of described floating boom is chromium or the nickeliferous or alloy of tungstenic or the polysilicon of doping.
Gallium nitride half floating boom power device the most according to claim 1, it is characterised in that described floating boom contacts with described gallium nitride channel layer and forms Schottky diode in described second groove.
Gallium nitride half floating boom power device the most according to claim 1, it is characterised in that described interlayer dielectric layer is one or more in silicon oxide, silicon nitride, silicon oxynitride.
Gallium nitride half floating boom power device the most according to claim 1, it is characterised in that described control gate is polysilicon control grid or metal control gate.
6. about the manufacture method of the gallium nitride half floating boom power device described in claim 1, including:
Sequentially form gallium nitride barrier layer, gallium nitride channel layer and aluminum gallium nitride sealing coat on a semiconductor substrate；
Characterized by further comprising:
Carry out photoetching and etching, in described gallium nitride channel layer, form the first groove and the second groove；
Depositing one layer of gate dielectric layer and carry out photoetching and etching, forming a floating boom opening in described gate dielectric layer, described second groove is come out by this floating boom opening；
Cover the structure deposit ground floor conductive film of above-mentioned formation；
Ground floor insulation film is formed on described ground floor conductive film；
Second layer conductive film is formed on described ground floor insulation film；
Carry out photoetching and be sequentially etched described second layer conductive film, ground floor insulation film and ground floor conductive film, being formed and cover described first groove and the floating boom of the second groove and be positioned at the interlayer dielectric layer on floating boom and control gate；
The source electrode contacted with described gallium nitride channel layer and drain electrode it is respectively formed in the both sides of described control gate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410402668.9A CN104183651B (en) | 2014-08-17 | A kind of gallium nitride half floating boom power device and manufacture method thereof | |
| PCT/CN2015/077144 WO2016026322A1 (en) | 2014-08-17 | 2015-04-22 | Semi-floating-gate power device and manufacturing method therefor |
| US15/129,958 US10388650B2 (en) | 2014-08-17 | 2015-04-22 | Semi-floating-gate power device and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410402668.9A CN104183651B (en) | 2014-08-17 | A kind of gallium nitride half floating boom power device and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104183651A CN104183651A (en) | 2014-12-03 |
| CN104183651B true CN104183651B (en) | 2017-01-04 |
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