CN103782372A - Polishing pad - Google Patents
Polishing pad Download PDFInfo
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- CN103782372A CN103782372A CN201280044813.XA CN201280044813A CN103782372A CN 103782372 A CN103782372 A CN 103782372A CN 201280044813 A CN201280044813 A CN 201280044813A CN 103782372 A CN103782372 A CN 103782372A
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- groove
- grinding
- abradant surface
- grinding pad
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A polishing pad for chemical mechanical polishing having at least a polishing layer, wherein the polishing surface of the polishing layer has a first groove and a second groove, and the first and the second grooves have side surfaces that are continuous with the polishing surface at the widthwise edges of each of the grooves. In the first groove, the angle between the polishing surface and the side surface continuous with the polishing surface is 105-150 DEG on at least one widthwise edge of the groove. In the second groove, the angle between the polishing surface and the side surface continuous with the polishing surface is 60-105 DEG on both widthwise edges of the groove.
Description
Technical field
The present invention relates to grinding pad.More specifically, the present invention relates to the grinding pad for using ideally at formation tabular surfaces such as semiconductor, dielectric/composite metal and integrated circuits.
Background technology
Along with semiconductor device densification, the importance that the multilayer wired and interlayer dielectric that accompanies with it forms, insert (plug), inlay the technology of electrode formation such as (damascene) etc. increases.Accompany therewith, the importance of the planarization of the metal film of these interlayer dielectrics, electrode also increases.As the high efficiency technical for this planarization, the grinding technique that is called as CMP (Chemical Mechanical Polishing, chemico-mechanical polishing) is popularized.
Generally speaking, CMP device by remain object being treated semiconductor wafer grinding head, for carry out object being treated milled processed grinding pad and keep the grinding plate (Yan Mo Ding Disk) of described grinding pad to form.And the grinding technique that is called as CMP is to supply with slurries (slurry) while grind the technology that is polished material with the grinding pad with grinding layer.It is particularly use slurries that the CMP of semiconductor wafer grinds, and by making semiconductor wafer (being designated hereinafter simply as wafer) and grinding pad relative motion, thereby removes the ledge of the layer of wafer surface, so that the technology of the layer planarization of wafer surface.
In CMP grinds, exist guarantee wafer local flatness, global planarity, prevent defect generation, guarantee that high grinding rate etc. requires characteristic.Therefore, require characteristic in order to realize these, among the factor that abrasive characteristic is impacted, carried out various research for the formation (pattern of groove and the cross sectional shape of groove etc.) of the groove of the grinding pad for the more great factor.
For example, known following technology, that is, the cross sectional shape of the groove forming on grinding layer surface is V font or U font, the pattern that makes groove is helical form or mesh-shape, to seek the stabilisation (with reference to patent documentation 1) of abrasive characteristic.
In this technology, sometimes, bight in the cross sectional shape of groove makes the surface of wafer produce cut, or in cross sectional shape, due to the finishing (dressing) of carrying out before and after grinding, in grinding thus etc. and form burr shape object in bight and produce cut.As the technology for eliminating this situation, also the known boundary portion at abradant surface and groove arranges the technology (with reference to patent documentation 2,3) on inclined plane.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2001-212752 communique;
Patent documentation 2: TOHKEMY 2010-45306 communique;
Patent documentation 3: TOHKEMY 2004-186392 communique.
Summary of the invention
The problem that invention will solve
At this, the inventor finds: by the inclined plane of special angle is set in the boundary portion of abradant surface and groove, attraction acts between wafer and grinding pad, and grinding rate uprises, and it is good that inner evenness becomes.This is to be important owing to inclined plane being set in the boundary portion of abradant surface and groove, for example, is also applicable to the groove that cross sectional shape is V font.In addition, if consider manufacturing process, the cross sectional shape of groove is simple figure, because of but desirable.
But the inventor has found following problem,, be V font at the cross sectional shape of groove, along with the use of grinding pad, grinding pad wearing and tearing, in slot cross-section long-pending service-life of grinding pad latter stage reducing, causing grinding defect because supply, the discharge function of slurry is insufficient increases.
Given this present invention plants the problem of prior art, object is to provide a kind of grinding pad, it keeps high grinding rate and good inner evenness, even and the grinding pad wearing and tearing along with the use of grinding pad, also can not cause grinding defect increase because supply, the discharge function of slurry reduced.
For the scheme of dealing with problems
The inventor considers whether can eliminate this problem by combining following groove: have for high grinding rate is uprised, inner evenness becomes the good boundary portion at abradant surface and groove and has the groove (for example V font) on the inclined plane of special angle, for example, even and if for the grinding pad wearing and tearing along with the use of grinding pad, also maintain the supply of slurry, the groove of discharge function (I font, approach the trapezoidal of I font).
Therefore,, in order to address the above problem, the present invention adopts following scheme., grinding pad of the present invention is at least to have the grinding pad that the cmp of grinding layer is used, it is characterized in that: there is the first groove and the second groove at the abradant surface of described grinding layer, the described first and second groove has the side continuous with described abradant surface in the acies portion of groove width direction separately, in described the first groove, at least in the edge end of a side of groove width direction, described abradant surface and larger and be below 150 degree than 105 degree with the continuous side angulation of this abradant surface, in described the second groove, two both sides of acies portion of groove width direction, described abradant surface and with the continuous side angulation of this abradant surface be that 60 degree are above and below 105 degree.
The effect of invention
According to the present invention, a kind of grinding pad can be provided, it keeps high grinding rate and good inner evenness, even and the grinding pad wearing and tearing along with the use of grinding pad, supply, the discharge function of slurry reduce, and grinding defect does not also increase.
Accompanying drawing explanation
Figure 1A is the figure of the cross sectional shape (first case) of the first groove of illustrating that the related grinding pad of an embodiment of the invention has.
Figure 1B is the figure of the cross sectional shape (second case) of the first groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 1 C is the figure of the cross sectional shape (the 3rd example) of the first groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 1 D is the figure of the cross sectional shape (the 4th example) of the first groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 A is the figure of the cross sectional shape (first case) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 B is the figure of the cross sectional shape (second case) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 C is the figure of the cross sectional shape (the 3rd example) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 D is the figure of the cross sectional shape (the 4th example) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 E is the figure of the cross sectional shape (the 5th example) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 2 F is the figure of the cross sectional shape (the 6th example) of the second groove of illustrating that the related grinding pad of an embodiment of the invention has.
Fig. 3 A is the sectional view that the configuration example (first case) of the unit cell being made up of the first and second groove is shown.
Fig. 3 B is the sectional view that the configuration example (second case) of the unit cell being made up of the first and second groove is shown.
Fig. 3 C is the sectional view of configuration example (the 3rd example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 D is the sectional view of configuration example (the 4th example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 E is the sectional view of configuration example (the 5th example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 F is the sectional view of configuration example (the 6th example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 G is the sectional view of configuration example (the 7th example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 H is the sectional view of configuration example (the 8th example) that the unit cell being made up of the first and second groove is shown.
Fig. 3 I is the sectional view of configuration example (the 9th example) that the unit cell being made up of the first and second groove is shown.
Fig. 4 is the figure of the configuration example of first groove at the abradant surface place of the related grinding pad of schematically illustrated an embodiment of the invention.
Embodiment
Below, illustrate and be used for implementing mode of the present invention.
Grinding pad of the present invention is the grinding pad at least with grinding layer, has groove A (the first groove) and groove B (the second groove) at the abradant surface of grinding layer.Groove A and groove B have the side continuous with abradant surface in the acies portion of groove width direction separately.In groove A, at least in the edge end of a side of groove width direction, abradant surface and larger and be below 150 degree than 105 degree with the continuous side angulation of this abradant surface.In groove B, the both sides of acies portion of two groove width directions, abradant surface and with the continuous side angulation of this abradant surface be that 60 degree are above and be below 105 degree.
Think that by groove A, at least at the edge end abradant surface of a side of groove width direction and larger and be below 150 degree than 105 degree with the continuous side angulation of this abradant surface, attraction acts between wafer and grinding pad, grinding rate rises.In addition, also think by attraction effect, the effect of also following grinding pad to contact equably in wafer face, gives higher inner evenness to the grinding rate of wafer.
If abradant surface and excessive with the continuous side angulation of this abradant surface, the surface area of grinding pad reduces, and in addition, the sectional area of groove becomes excessive, thereby slurry discharges too much, causes the reduction of grinding rate.On the other hand, if less, find the attraction effect having less than the groove side tilting.Therefore, abradant surface and with the continuous side angulation of this abradant surface need to, for larger than 105 degree and be below 150 degree, more than being desirably 110 degree, be more than 115 degree more satisfactoryly, be more desirably more than 120 degree.
Groove A can also have bottom surface.Bottom surface refer to abradant surface opposition side with respect to the continuous face in the continuous side of abradant surface, and be the face being connected with another side in opposite directions.In addition, the shape of bottom surface without particular limitation of.
Figure 1A～Fig. 1 D is the figure that the concrete example of the cross sectional shape of groove A is shown.
Groove A101 shown in Figure 1A has the cross sectional shape of V font.Groove A101 has in the edge end of groove width direction and abradant surface 1 continuous two sides 2 respectively.Shown in Figure 1A in the situation that, abradant surface and with the continuous side angulation θ of this abradant surface
atwo edge ends in groove width direction equate mutually, and its value is larger than 105 degree as described above and is below 150 degree.
Groove A102 shown in Figure 1B has the roughly bottom surface 3 of U font between two sides 2.
Groove A103 shown in Fig. 1 C has trapezoidal cross sectional shape, has the bottom surface parallel with abradant surface 14 between two sides 2.
Groove A104 shown in Fig. 1 D has along penetrating the recess 5 of setting with the orthogonal direction of abradant surface 1 between two sides 2, and its bottom surface is parallel with abradant surface 1.
In addition, for in groove A place and the continuous side of abradant surface, though grinding pad wearing and tearing, if can be maintained larger than 105 degree in edge end with abradant surface angulation and be below 150 degree, can be not only straight line, can also be curve, broken line, wavy line or their combination.
At this, the groove A that forms grinding pad does not need for one.For example, multiple following grooves with different cross section shape can also be combined to form grinding pad, in this groove, at least in the edge end of a side of groove width direction, abradant surface and larger and be below 150 degree than 105 degree with at least one party in the continuous side angulation of this abradant surface.In addition,, from the viewpoint of inner evenness, it is comparatively ideal forming grinding pad by a kind of groove A.
Grinding pad, in the time grinding, must be adjusted (conditioning), and this adjustment is by using the surperficial dressing (order founds て) of adjuster pad that diamond is disposed to metal or ceramic pedestal.By adjusting, the surface of grinding pad keeps being suitable for the concaveconvex shape of grinding, can implement stable grinding.But grinding layer is ground by adjusting, groove reduces along with grinding.If the sectional area of groove reduces, the balance of the supply of slurry, discharge worsens, and sometimes causes the harmful effect such as reduction, the increase of defect of grinding rate.
For example, be only V word at the cross sectional shape of groove, although grinding initial stage has supply, the discharge function of enough slurries, but carry out and service-life of grinding pad latter stage that the sectional area of groove reduces in grinding, supply, the discharge of slurry can not get enough enforcement, and the increase, the chip sucking that sometimes produce defect invest the undesirable conditions such as grinding pad.
In the case of being only that the groove A with described side is disposed at whole of pad surface, in service-life of grinding pad latter stage, sectional area reduces, sometimes produce the undesirable condition such as reduction, defect increase of grinding rate, but think by the supply that possesses responsible slurry, the groove B of discharge, can keep high grinding rate and inner evenness, can carry out stable grinding, until service-life of grinding pad latter stage.
Thereby at groove B place, in order to make the dimensionally stable of groove, it is that 60 degree are above and be below 105 degree that any in abradant surface and " groove B with the continuous side of abradant surface " angulation all needs, and is more than 80 degree, is more desirably more than 85 degree more satisfactoryly.In addition, be below 100 degree more satisfactoryly, be more desirably below 95 degree.
Ideally, groove B has bottom surface.In addition, in groove B, the shape of bottom surface also without particular limitation of.
Fig. 2 A～Fig. 2 F is the figure that the concrete example of the cross sectional shape of groove B is shown.
Groove B201 shown in Fig. 2 A has the cross sectional shape of rectangle.Groove B101 has in the edge end of groove width direction and abradant surface 1 continuous two sides 2 respectively.Shown in Fig. 2 A in the situation that, abradant surface and with the continuous side angulation θ of this abradant surface
btwo edge ends in groove width direction equate mutually, and its value is 90 degree.So, groove B201 has rectangular cross sectional shape, and bottom surface 6 is parallel with abradant surface 1.
Groove B202 shown in Fig. 2 B has the roughly bottom surface 7 of U font between two sides 2.
Groove B203 shown in Fig. 2 C has reduced width and penetrates the recess 8 of setting between two sides 2, and its bottom surface is parallel with abradant surface 1.
Groove B204 shown in Fig. 2 D has and two sides 2 formation continuously respectively, and the bottom surface 10 of inside all roughly U fonts that rolls the inclined-plane 9 of oblique taper and form between two inclined-planes 9.
Groove B205 shown in Fig. 2 E has and two sides 2 formation continuously respectively, and the bottom surface 12 of inside all V fonts that rolls the inclined-plane 11 of oblique taper and form between two inclined-planes 11.
Groove B206 shown in Fig. 2 F has the bottom surface parallel with abradant surface 1 14 between two sides 13.At groove B206 place, abradant surface 1 and with the angle θ of the continuous side 2 of this abradant surface 1
b' be acute angle.
In addition, for in groove B place and the continuous side of abradant surface, even grinding pad wearing and tearing, if more than edge end and abradant surface angulation can be maintained 60 degree and be below 105 degree, can be not only straight line, can also be curve, broken line, there is straight line, wavy line or their combination of multiple bending points.
At this, the groove B that forms grinding pad does not need the situation for a kind of groove, can also be by multiple grooves with different cross section shape are combined to form grinding pad.In addition,, from the viewpoint of inner evenness, a kind of situation of groove is desirable.
The groove forming at abradant surface is stipulated by the area occupation ratio of the groove forming in the unit are of abradant surface.The groove area rate that the groove forming at abradant surface is desirably per unit unit is more than 5% and is below 50%.Especially, the lower limit of the groove area rate of per unit unit is desirably more than 10%, is more desirably more than 15%.In addition, the upper limit of the groove area rate of per unit unit is below 45% more satisfactoryly, is more desirably below 40%.
Unit cell refers to the unit being combined to form by the groove A arranging in parallel to each other and groove B, is formed and forms groove whole of abradant surface repeatedly by unit cell at abradant surface.
Fig. 3 A～Fig. 3 I is the figure that the configuration example of the representational unit cell being made up of groove A and groove B is shown.
Unit cell 304 shown in Fig. 3 D is made up of the groove A adjoining each other and a groove B (arranging pattern: AB).
Unit cell 307 shown in Fig. 3 G is made up of the combination (arranging pattern: AAABB) of three groove A of adjacency and two groove B of adjacency.
Unit cell 309 shown in Fig. 3 I is made up of the combination (arranging pattern: AAAB) of three groove A and a groove B of adjacency.
On the other hand, the area ratio/occupancy ratio of the groove A of per unit groove area refers to the area ratio of the groove A of the unit are of the groove forming on abradant surface, the area ratio/occupancy ratio of groove A of the unit are of the groove forming at abradant surface be desirably more than 30% for and 90% below, be more than 40%, be more desirably more than 50% more satisfactoryly.In addition, the area ratio/occupancy ratio of the groove A of per unit groove area is below 80% more satisfactoryly, is more desirably below 70%.
On the grinding layer surface of grinding pad, for (hydroplane) phenomenon that suppresses to skid, in order to prevent the absorption of wafer and pad, the groove (group) that the common grinding pads such as lattice shape, indenture (dimple) shape, spiral-shaped, concentric circles can adopt can also be set, also use ideally their combination, but lattice shape is desirable especially.Lattice shape refers to line is combined into tessellated shape squarely.In lattice shape, the groove that can consider longitudinal direction and transverse direction is the multiple situations such as the interval of groove of the interval of groove of equally spaced situation, the longitudinal direction situation narrower than the interval of the groove of transverse direction, the transverse direction situation narrower than the interval of the groove of longitudinal direction.
Although the groove A forming on the abradant surface surface of grinding pad gives high grinding rate and good inner evenness as previously mentioned, follow the sectional area of end of lifetime to reduce, the supply of slurry and the balance of discharge worsen, and cause the increase of defect.Therefore, among the groove forming at abradant surface, be desirably more than 10% and below 90% of total flute length of the groove forming at abradant surface at total flute length of the integrally formed groove A of abradant surface, be more than 20% more satisfactoryly, be more desirably more than 25%, more be desirably more than 30%, be especially desirably more than 35%.In addition, among the groove forming at abradant surface, total flute length of groove A is below 80% more satisfactoryly, is more desirably below 70%, is more desirably below 60%, is especially desirably below 55%.
The ratio that total flute length of the groove A forming at abradant surface occupies with respect to the total length of whole grooves is aforementioned range, and attraction acts between wafer and grinding pad, finds the effect that grinding rate rises.In addition, be, in the formation method of groove of the abradant surface surface formation of grinding pad, can also form groove A to concentrate on the mode of grinding pad central authorities, form groove B at remainder.The in the situation that of the conglobate grinding pad of abradant surface, groove A is desirably and is forming as lower area: this region is the also region of two mutually orthogonal straight lines, center comprising by grinding pad, and below 70% of radius that the distance of at least one party in two straight lines of distance is grinding pad, if be that region below 60% forms for comparatively ideal, if be that region below 50% forms as more preferably, if be especially desirable being that region below 40% forms.
Fig. 4 is the figure of the configuration example of the groove A at the abradant surface place of schematically illustrated grinding pad.In the grinding pad 401 shown in Fig. 4, at conglobate abradant surface 402, groove A403 (illustrating take thick line) is forming as lower area: this region is as comprising by two straight line L of the center O of abradant surface 402
1, L
2region, and below 1/3 (approximately 33%) that is radius r apart from the minimum value of the distance of at least one party in two straight lines.In addition, shown in Fig. 4, be shown in dotted line groove B404.So, be suitable for when XY lattice shape in the shape as groove, and only make compared with groove A403 concentrates along a direction, along orthogonal both direction (directions X and Y-direction), groove A403 being disperseed is more preferably.
Arrange regularly and form in the situation that at groove A and groove B, for example, can form grinding pad as basis take the unit cell as shown in any one in Fig. 3 A～Fig. 3 H.But as the combination of groove, the number of groove A is not limited to illustrative situation with respect to the ratio of the number of overall groove.
Because the groove width of groove A and groove B need to have the sectional area of supply and the discharge that can carry out slurry, therefore it is desirable to as 0.1mm is above and for below 10mm, comparatively ideal is for more than 0.3mm, is more preferably more than 0.5mm.In addition, the groove width of groove A and groove B is comparatively ideal is for below 8mm, is more preferably below 5mm.
Because the groove depth of groove A and groove B need to be guaranteed supply, discharge and enough life-spans of slurry, therefore it is desirable to as 0.2mm is above and for below 4mm, comparatively ideal is for more than 0.3mm, is more preferably more than 0.4mm.In addition, the groove depth of groove A and groove B is comparatively ideal is for below 3mm, is more preferably below 2mm.
The thickness of grinding layer is because the upper surface of the platform than from lapping device is little to the distance of the lower surface of grinding head, therefore it is desirable to as below 4.0mm, comparatively ideal is for below 3.5mm, is more preferably below 3.0mm, especially it is desirable to as below 2.5mm.
In the present invention, as forming the grinding layer of grinding pad, miniature rubber A hardness is more than 70 degree, and the grinding layer of structure with separated foam is due to formation tabular surface in semiconductor, dielectric/composite metal and integrated circuit etc., therefore be desirable.Although without particular limitation of, but as the material that forms this kind of tectosome, can be listed below material and the resin using them as principal component etc.: polyethylene, polypropylene, polyester, polyurethane, polyureas, polyamide, polyvinyl chloride, polyacetals, Merlon, polymethyl methacrylate, polytetrafluoroethylene, epoxy resin, ABS resin, AS resin, phenolic resins, melmac, " chlorobutadiene (Neoprene) (registered trade mark) " rubber, butadiene (butadiene) rubber, styrene butadiene ribber, ethylene propylene rubber, silicon rubber, fluorubber.Can also use two or more in them.In this kind of resin, from controlling with comparalive ease separated foam diameter this point, the material take polyurethane as principal component is comparatively desirable.
Polyurethane refers to by the sudden reaction of PIC (polyisocyanate) or polymerization reaction and synthetic macromolecule.As PIC, although can enumerate toluene di-isocyanate(TDI) (tolylene diisocyanate), methyl diphenylene diisocyanate (diphenylmethane diisocyanate), naphthalene diisocyanate (naphthalene diisocyanate), hexamethylene diisocyanate (hexamethylene diisocyanate), IPDI (isophorone diisocyanate) etc., but be not limited to this, can also use two or more in them.The compound using as the reaction object of PIC is active hydrogen-contg compound, contains plural many hydroxyls (polyhydroxy) base or amino compound.As containing polyhydric compound, representational is polyalcohol (polyol), PPG (polyether polyol), polytetramethylene ether diol (polytetramethylene ether glycol), epoxy resin sex change polyalcohol, PEPA, propylene polyalcohol, polybutadiene polyol (polybutadiene polyol), organosilicon polyalcohol (silicone polyol) etc. can be enumerated, two or more in them can also be used.It is desirable to decide according to hardness, bubble diameter and expansion ratio etc. combination and the optimised quantity of PIC and polyalcohol and catalyst, blowing agent, surfactant.
As the method that forms separated foam in these polyurethane, generally speaking be to the chemical blowing process of the various blowing agents of fusion in the resin of manufacturing when polyurethane, stir but can also use ideally by mechanicalness resin expanded its curing method that makes afterwards that makes.
The average diameter of separated foam is from keeping the viewpoint of slurry on pad surface, more than it is desirable to 20 μ m, comparatively ideal is more than 30 μ m.On the other hand, the mean air bubble diameter of separated foam, from guaranteeing the viewpoint of the concavo-convex flatness in the part of semiconductor substrate, it is desirable to below 150 μ m, and comparatively ideal is below 140 μ m, more preferably below 130 μ m.In addition, using Keyence (キ ー エ Application ス) the super degree of depth microscope that produces VK-8500 with 400 times of bubbles of observing in a visual field while observing sample in cross section of multiplying power among, to the round shape bubble except the bubble that is viewed as damaged round shape in end, the visual field, utilize image processing apparatus to measure circle equivalent diameter according to area of section, and calculate number mean value, thereby be averaging bubble diameter.
As an execution mode of grinding pad of the present invention, it is desirable to the condensate and the polyurethane that contain vinyl compound, and there is the pad of separated foam.Although only can improve toughness and hardness with the condensate of polyvinyl, be difficult to obtain the grinding pad of the homogeneous with separated foam.In addition, if improving hardness, polyurethane becomes fragile.By making vinyl compound infiltration (impregnation) in polyurethane, can realize and contain separated foam, and toughness and the high grinding pad of hardness.
Vinyl compound is the compound with the carbon-to-carbon double bond of polymerism.Particularly, can enumerate methyl acrylate (methyl acrylate), methyl methacrylate (methyl methacrylate), ethyl acrylate (ethyl acrylate), EMA (ethyl methacrylate), acrylic acid-n-butyl ester (n-butyl acrylate), methacrylic acid-n-butyl ester (n-butyl methacrylate), methacrylic acid-2-Octyl Nitrite (2-ethyl hexyl methacrylate), isodecyl methacrylate (isodecyl methacrylate), isobutyl methacrylate (isobutyl methacrylate), methacrylic acid-n-lauryl (n-lauryl methacrylate), 2-hydroxyethyl methacry-late (2-hydroxyethyl methacrylate), methacrylic acid-2-hydroxypropyl acrylate (2-hydroxypropyl methacrylate), methacrylic acid-2-hydroxy butyl ester (2-hydroxybutyl methacrylate), dimethylaminoethyl methacrylate (dimethylaminoethyl methacrylate), methacrylic acid diethylin ethyl ester (diethylaminoethyl methacrylate), glycidyl methacrylate (glycidyl methacrylate), ethylene glycol dimethacrylate (ethyleneglycol dimethacylate), acrylic acid, methacrylic acid, fumaric acid (fumaric acid), dimethyl fumarate, DEF, fumaric acid dipropyl, maleic acid, dimethyl maleate, diethyl maleate, dipropyl maleate, phenyl maleimide (phenyl maleimide), N-cyclohexylmaleimide (cyclohexyl maleimide), isopropyl maleimide (isopropyl maleimide), acrylonitrile (acrylonitrile), acrylamide (acrylamide), vinyl chloride, vinylidene chloride, styrene, AMS (α-methylstyrene), divinylbenzene (divinylbenzene), ethylene glycol dimethacrylate, diethylene glycol dimethylacrylate etc.In addition,, as vinyl compound, can also use two or more in them.
In above-mentioned vinyl compound, it is desirable to CH
2=CR
1cOOR
2(R
1: methyl or ethyl, R
2: methyl, ethyl, propyl group or butyl).Wherein methyl methacrylate, EMA, n-butyl methacrylate, isobutyl methacrylate easily to polyurethane form aspect separated foam, the high and good aspect of planarization characteristics of the hardness of the permeate well aspect of monomer, the easy aspect of polymerizing curable, the condensate of polyvinyl that contains polymerizing curable and the foaming tectosome of polyurethane is desirable.
The polymerization initiator using as the condensate in order to obtain these vinyl compounds and ideally, can enumerate azodiisobutyronitrile (azobisisobutyronitrile), azo two (2, 4-methyl pentane nitrile) (azobis (2, 4-dimethylvaleronitrile)), azo bis cyclohexane formonitrile HCN (azobiscylonhexanecarbonitrile), benzoperoxide (benzoyl peroxide), lauroyl peroxide (lauroyl peroxide), the free initators (ラ ジ カ ル Open beginning drug) such as di-isopropyl peroxydicarbonate (isopropyl peroxydicarbonate).Can also use two or more in them.In addition, can also use the polymerization of redox class to start agent, the combination of for example peroxide and amine.
As the method for permeating vinyl compound in polyurethane, can enumerate the method in the container that vinyl compound is housed by polyurethane impregnated.In addition, now, for the object of accelerating seepage velocity, it is also desirable implementing the processing such as heating, pressurization, decompression, stirring, vibration, ultrasonic vibration.
Vinyl compound should determine according to the characteristic of the grinding pad of the kind of used vinyl compound and polyurethane, manufacturing etc. to the infiltration capacity in polyurethane, though can not be without exception, but for example it is desirable to condensate that the vinyl compound from the foaming tectosome of polymerizing curable obtains and the ratio that contains of polyurethane is 30/70～80/20 according to weight ratio.If the polymeric ratio that contains obtaining from vinyl compound is more than 30/70 according to weight ratio, can improve fully the hardness of grinding pad.In addition, be below 80/20 if contain ratio, can improve fully the elasticity of grinding layer.
In addition the condensate that, the vinyl compound of the polymerizing curable from polyurethane obtains and the containing ratio of polyurethane can be measured by Thermal decomposition gas chromatography analysis (gas chromatography)/quality analysis gimmick.As the device that can use in this gimmick, as thermal decomposer, can enumerate double click type cracking instrument (double shot pyrolyser) " PY-2010D " (frontier lab (Off ロ Application テ ィ ア ラ ボ) company product), as gas-chromatography, quality analysis apparatus, can enumerate " TRIO-1 " (VG company product).
In the present invention, from the viewpoint of the concavo-convex flatness in the part of semiconductor substrate, it is desirable to not contain discretely the polymeric phase that obtains from vinyl compound and the phase of polyurethane.If this state is represented quantitatively, be " infrared spectrum when infrared microscopy light-dividing device take the size of luminous point as 50 μ m is observed grinding pad has by the polymeric infrared absorption peak of polymerization of vinyl compound and the infrared absorption peak of polyurethane, and the infrared spectrum of various positions is almost identical ".As infrared microscopy light-dividing device as used herein, can enumerate the IR μ s that SPECTRA-TEC company produces.
For the object of improved characteristics, grinding pad can also contain the various additives such as grinding agent, charged preventor, lubricant, stabilizer, dyestuff.
In the present invention, the miniature rubber A hardness of grinding layer refers to and utilizes macromolecule gauge (strain) to produce the value that miniature durometer MD-1 evaluates.Miniature rubber A hardometer MD-1 can be difficult to the thin objects of measuring by hardometer in the past, the Determination of Hardness of wisp.Miniature rubber A hardometer MD-1 being as approximately 1/5 dwindle model and design, make of spring durometer (durometer (durometer)) A type, thereby can obtain the measured value consistent with the hardness of spring hardometer A type.Common grinding pad is because the thickness of grinding layer or hard layer is lower than 5mm, therefore can not utilize spring durometer A type to evaluate.Therefore, in the present invention, the miniature rubber A hardness of grinding layer utilizes described miniature rubber MD-1 to evaluate.
In the present invention, from the viewpoint of the concavo-convex flatness in the part of semiconductor substrate, according to miniature rubber A hardness, more than the hardness of grinding layer it is desirable to 70 degree, comparatively ideal is more than 80 degree.
In the present invention, from reducing the poor viewpoint of not good, the overall ladder of local flatness, the density of grinding layer it is desirable to 0.3g/cm
3above, comparatively ideal is 0.6g/cm
3above, more preferably 0.65g/cm
3above.On the other hand, from reducing the viewpoint of cut, the density of grinding layer it is desirable to 1.1g/cm
3below, comparatively ideal is 0.9g/cm
3below, further it is desirable to 0.85g/cm
3below.In addition, the density of grinding layer of the present invention is to use Harvard (ハ ー バ ー De) type densimeter (pycnometer) (JIS R-3503 benchmark), the value of measuring take water as medium.
From making the viewpoint that inner evenness is good, it is more than 40MPa that grinding pad of the present invention it is desirable to have bulk modulus and tensile modulus of elasticity is the resilient coating more than 1MPa and below 20MPa.Apply and isotropicly exert pressure and measure its change in volume having measured in advance the determinand of volume, based on this measurement result, calculate bulk modulus according to bulk modulus=exert pressure/(change in volume/volume) originally.What say in the present invention, is the bulk modulus while sample being applied to the pressure of 0.04～0.14MPa at 23 ℃.
Bulk modulus of the present invention is measured by following method.The stainless steel that internal volume is about to 40mL is measured the water that cell packs test portion sheet and 23 ℃ into, the pyrex pipette processed (メ ス ピ ペ ッ ト) (minimum scale 0.005mL) of installed capacity 0.5mL.In addition, as pressure vessel and the pipe (internal diameter 90mm φ × 2000mm, wall thickness 5mm) of the Corvic system of use is put into the mensuration cell that above-mentioned test portion sheet is housed therein, nitrogen pressurization under pressure P, and measurement volumes changes V1.Then, test portion sheet is not put into mensuration cell, nitrogen pressurization under pressure P, and measure change in volume V0.Using pressure P divided by the value of Δ V/Vi=(V1-V0)/Vi as the bulk modulus of test portion and calculate.
In the present invention, more than the bulk modulus of resilient coating it is desirable to 40MPa.Be more than 40MPa by making bulk modulus, can improve the inner evenness of whole of semiconductor substrate.In addition, the slurry in the inflow perforation surface of grinding pad and the hole of the inside, shipwreck, with infiltration resilient coating, can maintain damping characteristics.
Adopt dumbbell (dumbbell) shape and apply tensile stress, in the scope that is from 0.01 to 0.03 in elongation strain (=tensile elongation variation/the original length), measure tensile stress, based on this measurement result, calculate tensile modulus of elasticity of the present invention by tensile modulus of elasticity=((elongation strain is the tensile stress of 0.03 o'clock)-(elongation strain is the tensile stress of 0.01 o'clock))/0.02.As the determinator of tensile stress, can enumerate Orientech (オ リ エ Application テ ッ Network) company and produce Tensilon (テ Application シ ロ Application) universal testing machine RTM-100 etc.The condition determination of tensile stress is: test speed is that 5cm/ divides, and test film is shaped as the dumbbell shape of width 5mm and the long 50mm of test portion.
In the present invention, from the viewpoint of the inner evenness of whole of semiconductor substrate, more than the tensile modulus of elasticity of resilient coating it is desirable to 1MPa, comparatively ideal is more than 1.2MPa.In addition, the tensile modulus of elasticity of resilient coating it is desirable to below 20MPa, and comparatively ideal is below 10MPa.
As this kind of resilient coating, although can enumerate the non-foaming elastomers such as natural rubber, acrylonitrile-butadiene rubber (nitrile rubber), " chlorobutadiene (registered trade mark) " rubber, polybutadiene (polybutadiene) rubber, hot curing polyurethane rubber, thermoplastic polyurethane rubber, silicon rubber, not be defined in them.The ideal thickness of resilient coating be the scope of 0.1～2mm.From the viewpoint of the inner evenness of whole of semiconductor substrate, the ideal thickness of resilient coating be more than 0.2mm, comparatively ideal is more than 0.3mm.In addition, from the viewpoint of local flatness, the ideal thickness of resilient coating be below 2mm, comparatively ideal is below 1.75mm.
As by the scheme of grinding layer and resilient coating laminating, for example, can enumerate two-sided tape or bonding agent.
Two-sided tape has the general formation that is provided with adhesive linkage on the two sides of the base material such as nonwoven fabrics, film.What in addition, grinding pad of the present invention can also be at buffer substrate tablet (cushion sheet) arranges two-sided tape with the bonding face of pressing plate (platen).As this kind of two-sided tape, can use with above-mentioned and similarly there is the two-sided tape that is provided with the general formation of adhesive linkage on the two sides of base material.As base material, for example, can enumerate nonwoven fabrics, film etc.Peel off from pressing plate after the use of grinding pad if consider, it is desirable to use film in base material.
In addition, as the component of adhesive linkage, for example, can enumerate rubber-like bonding agent, propylene class bonding agent etc.If consider the amount of metal ion, therefore propylene class bonding agent is desirable because metal ion amount is few.In addition, the component of buffer substrate tablet and pressing plate is scarcely same, makes the component difference of each adhesive linkage of two-sided tape, can make the bonding force of buffer substrate tablet and pressing plate suitably change.
As the polished material that is polished in the present invention, for example, can be set forth in the insulating barrier that forms on semiconductor wafer or the surface of metal wiring.As insulating barrier, interlayer dielectric, lower floor's dielectric film of metal wiring, the element that can enumerate metal wiring separates the shallow trench isolation (shallow trench isolation) using.As metal wiring, can enumerate aluminium, tungsten, copper etc., structure aspect have inlay, dual damascene, insertion etc.Using copper as metal wiring in the situation that, the barrier metals such as silicon nitride (barrier metal) also become grinding object.The present main flow of dielectric film is silica, but also uses insulating film with low dielectric constant.Be polished material except semiconductor wafer, can also be used for the grinding of magnetic head, hard disk, sapphire etc.
Ginding process of the present invention is aptly for forming tabular surface at glass, semiconductor, dielectric/composite metal and integrated circuit etc.
Embodiment
Below, by embodiment, details of the present invention is described.But, not limit and explain the present invention by the present embodiment.In addition carry out, with being determined as follows.
> is measured at < angle of inclination
By the grinding pad that has formed groove on grinding layer surface along the section of groove depth direction, utilize Keyence produce VK-8500 super degree of depth microscopic examination groove cross section and measured abradant surface and with the continuous side angulation of abradant surface.At grinding pad be circular in the situation that, measure with apart from the nearest groove in the position of grinding pad center 50mm, 150mm and 250mm, and using this mean value of 3 as angle of inclination.In addition, at grinding pad be not circular in the situation that, measure with from cornerwise intersection point of sheet towards the nearest groove in the position of end 50mm, a 150mm and 250mm, and using this mean value of 3 as angle of inclination.
The average grinding rate of < is measured and inner evenness >
The Mirra 3400 that uses Applied Materials (ア プ ラ イ De マ テ リ ア Le ズ) (strain) to produce, carries out end point determination and grinds with set grinding condition.About the average grinding rate as abrasive characteristic, measure the grinding rate (nm/ divides) except the most peripheral 10mm of 8 inches of wafers.Using the standard deviation of grinding rate divided by the value of the maximum of grinding rate and the difference of minimum value as inner evenness.
< flaw evaluation >
Process as strengthening, after the wafer of grinding being impregnated in to the hydrofluoric acid 10 minutes washing of 0.5 % by weight, utilize the mixed solution of the ammonia solution of 1.0 % by weight and the aquae hydrogenii dioxidi of 1.0 % by weight to clean and washing and drying.For clean wafer, use the SP-1 that KLA-Tencor (strain) produces to count fault (defect) number more than 0.155 μ m.
< pad grinding speed >
Use Mitutoyo (ミ Star ト ヨ) (strain) to produce depth gauge (digital display (デ ジ マ チ ッ Network) type) and measure the groove depth before and after grinding, and the value that groove is reduced divided by the value of dish (the デ ィ ス Network) service time in evaluating as pad grinding speed.
The number ratio > of < groove A
The grinding pad and the groove that have formed groove on abradant surface surface are cut into slices concurrently, and measured the number of groove A and groove B.And, according to the arrangement example (pattern diagram: Fig. 4) of the arrangement of groove A and groove B (sectional view: Fig. 3) and groove A and groove B, with the summation of the number of groove A and groove B except the number of groove A is using the number ratio as groove A.In the following calculating formula of recording.
Quantity/(quantity of quantity+groove B of groove A) × 100 (%) of number ratio=groove A of groove A.
Below, embodiment 1～11, comparative example 1～3 are described.
(embodiment 1)
Utilize RIM forming machine to mix 30 weight portion polypropylene glycols (polypropylene glycol), 40 weight portion methyl diphenylene diisocyanates, 0.5 weight parts water and 0.3 weight portion triethylamine (triethylamine), 1.7 weight portion silicon surfactants, 0.09 weight portion stannous octoate (オ Network チ Le acid ス ズ), be expelled to metal pattern and carry out extrusion forming, make polyurathamc sheet (the miniature rubber A hardness: 42 degree, density: 0.76g/cm of the separated foam of thickness 2.6mm
3, the mean air bubble diameter of separated foam: 34 μ m).
Described polyurathamc sheet be impregnated in and added 0.2 weight portion azodiisobutyronitrile (methyl methacrylate 60 minutes.Then described polyurathamc sheet is immersed in by 15 weight account polyethylene alcohol (polyvinyl alcohol) " the CP " (degree of polymerization: approximately 500, nacalai tesque (Na カ ラ イ テ ス Network) (strain) produce), 35 parts by weight of ethanol (reagent grades, sheet mountain chemistry (strain) produces), dry after in the solution that forms of 50 weight parts waters, thereby cover described polyurathamc sheet top layer with polyvinyl alcohol.
Then described polyurathamc sheet is clipped between two glass sheets across polyethylene substrate processed, at 65 ℃, heats 6 hours, at 120 ℃, heat 3 hours, thereby make its polymerizing curable.After the demoulding between glass plate washing, at 50 ℃, carry out vacuumize.Be thereby that thickness 2.00mm has made grinding layer by the hard foamed slice processing so obtaining.Methyl methacrylate containing ratio in grinding layer is 66 % by weight.The D hardness of grinding layer is 54 degree in addition, and density is 0.81g/cm
3, the mean air bubble diameter of separated foam is 45 μ m.
Carry out double-side grinding to hard foamed that obtains, made the grinding layer of thickness 2mm.
As resilient coating, 0.3mm product (bulk modulus=65MPa that the miniature rubber A hardness 90 of the thermoplastic polyurethane that Japanese agate Thailand (マ タ イ) (strain) is produced is spent, tensile modulus of elasticity=4MPa) use roll coater to produce MA-6203 adhesive linkage and be laminated in the grinding layer obtaining by said method across Mitsui Chemicals polyurethane (strain), and overleaf as the back side adhesive tape gluing ponding chemical industry (strain) produce two-sided tape 5604TDM.
By groove width 3.0mm, separation 15mm, tilt angle theta
ait is the square-section (tilt angle theta of the groove A of cross sectional shape V word, groove depth 1.5mm of 135 degree and groove width 1.5mm, separation 15mm, groove depth 1.5mm
b=90 degree) groove B (hereinafter referred to as pattern A) and be formed as XY clathrate using as grinding pad alternately repeatedly.The groove area rate of the per unit unit of groove A is 24.9%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 73.7%.
The grinding pad obtaining by said method is pasted on to the platform of grinder (Applied Materials (strain) produces " Mirra 3400 ").Make to keep pressure=41kPa (6psi), interior pipe pressure=28kPa (4psi), diaphragm pressure=28kPa (4psi), pressing plate rotating speed=76rpm, grinding head rotating speed=75rpm, (Cabot (キ ャ ボ ッ ト) company produces to make slurry, the traffic flow of SS-25) dividing with 150mL/, utilize Saesol produce finishing machine under load 17.6N (4lbf), milling time 1 minute, from grind start to carry out 30 seconds in-situ conditionings (in-situ dressing), ground 8 inches of wafers of 100 oxide-films.The average grinding rate of the 100th oxide-film is that 202nm/ divides, and inner evenness is 11.8%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 331, is very good.In addition, the pad grinding speed in grinding is that 1.01 μ m/ divide.
(embodiment 2)
Utilize groove width 3.0mm, separation 15mm, tilt angle theta
ait is the groove that the groove B of the square-section of the groove A of V shaped sections, groove depth 1.5mm of 135 degree and groove width 1.5mm, separation 15mm, groove depth 1.5mm forms lapped face, except the combination that makes a groove A and two groove B, (hereinafter referred to as pattern B) the abradant surface center from grinding pad spread all over the whole region of padding radius and are formed as, XY clathrate, grinding similarly to Example 1 repeatedly.The groove area rate of the per unit unit of groove A is 20.7%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 60.9%.Average grinding rate is that 197nm/ divides, and inner evenness is 9.0%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 211, is good.In addition, the pad grinding speed in grinding is that 1.21 μ m/ divide.
(embodiment 3)
Except on grinding layer surface in the region for comprising center by abradant surface mutually orthogonal two straight lines, and the region below 32% of the radius that is abradant surface apart from the distance of at least one party's straight line is by groove width 3.0mm, separation 15mm, tilt angle theta
abe that the V shaped sections of 135 degree, the groove A of groove depth 1.5mm are formed as XY clathrate, in 32% the region that exceedes radius apart from the distance of diameter, the groove B of the square-section of groove width 1.5mm, separation 15mm, groove depth 1.5mm is formed as to XY clathrate, using outside grinding pad (hereinafter referred to as pattern C), grind similarly to Example 1.The groove area rate of the per unit unit of groove A is 23.1%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 67.7%.The allocation plan of groove shown in Figure 4.Average grinding rate is that 196nm/ divides, and inner evenness is 10.9%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 142, is very good.In addition, the pad grinding speed in grinding is that 1.34 μ m/ divide.
(embodiment 4)
Except adopting the tilt angle theta of groove A on grinding layer surface
abe beyond the trapezoid cross section of 120 degree, grind similarly to Example 1.The groove area rate of the per unit unit of groove A is 16.5%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 54.8%.Average grinding rate is that 199nm/ divides, and inner evenness is 6.0%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 155, is very good.In addition, the pad grinding speed in grinding is that 1.14 μ m/ divide.
(embodiment 5)
Except adopting the tilt angle theta of groove A on grinding layer surface
abe beyond the trapezoid cross section of 123 degree, grind similarly to Example 4.The groove area rate of the per unit unit of groove A is 28.3%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 73.6%.Average grinding rate is that 203nm/ divides, and inner evenness is 8.4%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 141, is very good.In addition, the pad grinding speed in grinding is that 1.32 μ m/ divide.
(embodiment 6)
Except adopting the tilt angle theta of groove B on grinding layer surface
bbe beyond the trapezoid cross section of 85 degree, grind similarly to Example 4.The groove area rate of the per unit unit of groove A is 30.2%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 68.9%.Average grinding rate is that 201nm/ divides, and inner evenness is 9.1%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 139, is very good.In addition, the pad grinding speed in grinding is that 1.11 μ m/ divide.
(embodiment 7)
Be tilt angle theta except making the groove A on grinding layer surface
abe the V shaped sections of 120 degree, making groove B is tilt angle theta
bbe beyond the trapezoid cross section of 85 degree, grind similarly to Example 3.The groove area rate of the per unit unit of groove A is 16.5%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 54.8%.Average grinding rate is that 200nm/ divides, and inner evenness is 9.8%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 211, is very good.In addition, the pad grinding speed in grinding is that 1.33 μ m/ divide.
(embodiment 8)
Be tilt angle theta except making the groove A on grinding layer surface
abe the V shaped sections of 120 degree, making groove B is tilt angle theta
bbe beyond the trapezoid cross section of 95 degree, grind similarly to Example 3.The groove area rate of the per unit unit of groove A is 18.4%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 49.0%.Average grinding rate is that 209nm/ divides, and inner evenness is 10.1%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 109, is very good.In addition, the pad grinding speed in grinding is that 1.30 μ m/ divide.
(embodiment 9)
Be tilt angle theta except making the groove A on grinding layer surface
abe beyond the V shaped sections of 150 degree, grind similarly to Example 3.The groove area rate of the per unit unit of groove A is 34.6%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 78.4%.Average grinding rate is that 200nm/ divides, and inner evenness is 9.9%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 111, is very good.In addition, the pad grinding speed in grinding is that 1.41 μ m/ divide.
(embodiment 10)
Be tilt angle theta except making the groove A on grinding layer surface
abe the V shaped sections of 150 degree, making groove B is tilt angle theta
bbe beyond the trapezoid cross section of 85 degree, grind similarly to Example 3.The groove area rate of the per unit unit of groove A is 34.6%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 78.4%.Average grinding rate is that 206nm/ divides, and inner evenness is 10.0%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 153, is very good.In addition, the pad grinding speed in grinding is that 1.44 μ m/ divide.
(embodiment 11)
Be tilt angle theta except making the groove A on grinding layer surface
abe the V shaped sections of 150 degree, making groove B is tilt angle theta
bbe beyond the trapezoid cross section of 95 degree, grind similarly to Example 3.The groove area rate of the per unit unit of groove A is 36.5%, and the area ratio/occupancy ratio of the groove A of per unit groove area is 74.3%.Average grinding rate is that 200nm/ divides, and inner evenness is 10.1%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 134, is very good.In addition, the pad grinding speed in grinding is that 1.40 μ m/ divide.
(comparative example 1)
Except the groove that makes grinding layer surface is only the square-section for groove width 1.5mm, separation 15mm, groove depth 1.5mm, grind similarly to Example 1.Average grinding rate is that 180nm/ divides, and inner evenness is 12.2%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 583, is good.In addition, the pad grinding speed in grinding is that 1.13 μ m/ divide.
(comparative example 2)
Except the V shaped sections that the groove that makes grinding layer surface is only spent for groove width 3.0mm, separation 15mm, groove depth 1.5mm, angle of inclination 135, grind similarly to Example 1.Average grinding rate is that 217nm/ divides, and inner evenness is 21.1%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 297, is very good.In addition, the pad grinding speed in grinding is that 1.73 μ m/ divide.
(comparative example 3)
Except to make grinding layer be 1.0mm and make, V shaped sections that surperficial groove only spends for groove width 1.0mm, separation 15mm, groove depth 0.5mm, angle of inclination 135, to grind similarly to Example 1.Average grinding rate is that 205nm/ divides, and inner evenness is 18.3%.
For the wafer grinding, utilize described flaw evaluation method to count fault more than 0.155 μ m, fault is 1521, is more.In addition, the pad grinding speed in grinding is that 1.68 μ m/ divide.
By the table 1 that the results are shown in obtaining in embodiment 1～11 described above, comparative example 1～3.
[table 1]
Symbol description
1,402 abradant surfaces
2,13 sides
3,4,6,7,8,10,12,14 bottom surfaces
5 recesses
9,11,13 inclined-planes
101,102,103,104,403 groove A
201,202,203,204,205,206,404 groove B
301,302,303,304,305,306,307,308,309 unit cells
401 grinding pads.
Claims (7)
1. a grinding pad, the grinding pad that it is used at least having the cmp of grinding layer, is characterized in that:
There is the first groove and the second groove at the abradant surface of described grinding layer,
The described first and second groove has the side continuous with described abradant surface in the acies portion of groove width direction separately,
In described the first groove, at least in the edge end of a side of groove width direction, described abradant surface and larger and be below 150 degree than 105 degree with the continuous side angulation of this abradant surface,
In described the second groove, two both sides of acies portion of groove width direction, described abradant surface and with the continuous side angulation of this abradant surface be that 60 degree are above and below 105 degree.
2. grinding pad according to claim 1, is characterized in that: described the second groove has bottom surface.
3. grinding pad according to claim 2, is characterized in that: the groove area rate of per unit unit is more than 5% and below 50%, and the area ratio/occupancy ratio of the first groove of per unit groove area is more than 30% and below 90%.
4. according to the grinding pad described in any one in claim 1～3, it is characterized in that: the described first and second flute profile becomes clathrate.
5. grinding pad according to claim 4, is characterized in that: total flute length of described the first groove forming at described abradant surface is more than 10% and below 90% of total flute length at the groove of described abradant surface formation.
6. according to the grinding pad described in claim 4 or 5, it is characterized in that: described abradant surface is circular, described the first groove forming at described abradant surface forms in as lower area: this region be comprise by as described in the center of abradant surface the region of mutually orthogonal two straight lines, and the distance of at least one party in described two straight lines of distance below 70% of radius that is described abradant surface.
7. according to the grinding pad described in any one in claim 4～6, it is characterized in that: in described the first groove, two two both sides of acies portion of groove width direction, described abradant surface and larger and be below 150 degree than 105 degree with the continuous side angulation of this abradant surface.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-201350 | 2011-09-15 | ||
| JP2011201350 | 2011-09-15 | ||
| PCT/JP2012/073538 WO2013039181A1 (en) | 2011-09-15 | 2012-09-13 | Polishing pad |
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|---|---|
| CN103782372A true CN103782372A (en) | 2014-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201280044813.XA Pending CN103782372A (en) | 2011-09-15 | 2012-09-13 | Polishing pad |
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| US (1) | US20140378035A1 (en) |
| EP (1) | EP2757578A4 (en) |
| JP (1) | JPWO2013039181A1 (en) |
| KR (1) | KR20140062095A (en) |
| CN (1) | CN103782372A (en) |
| SG (1) | SG11201400614RA (en) |
| TW (1) | TW201318766A (en) |
| WO (1) | WO2013039181A1 (en) |
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| CN113165141A (en) * | 2018-11-29 | 2021-07-23 | 株式会社大辉 | Polishing pad and method for manufacturing the same |
| CN114043380A (en) * | 2021-11-18 | 2022-02-15 | 北京烁科精微电子装备有限公司 | Grinding pad and grinding device with same |
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| JP2016047566A (en) * | 2014-08-27 | 2016-04-07 | 株式会社フジミインコーポレーテッド | Polishing pad |
| CN104493684B (en) * | 2014-12-16 | 2016-10-05 | 天津大学 | A kind of cylindrical component milling apparatus and workpiece propulsion plant thereof and Ginding process |
| CN104493689B (en) * | 2014-12-16 | 2017-01-11 | 天津大学 | Double-disc straight-groove grinding disc for surfaces of cylindrical parts |
| US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
| US10857647B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | High-rate CMP polishing method |
| US10857648B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Trapezoidal CMP groove pattern |
| US10586708B2 (en) | 2017-06-14 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Uniform CMP polishing method |
| US10861702B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Controlled residence CMP polishing method |
| US10777418B2 (en) * | 2017-06-14 | 2020-09-15 | Rohm And Haas Electronic Materials Cmp Holdings, I | Biased pulse CMP groove pattern |
| JP7087365B2 (en) * | 2017-12-05 | 2022-06-21 | 日本電気硝子株式会社 | Polishing pad |
| US11685013B2 (en) * | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
| KR102026250B1 (en) * | 2018-02-05 | 2019-09-27 | 에스케이실트론 주식회사 | Wafer polishing pad and Manufacturing Method of it |
| US11878388B2 (en) * | 2018-06-15 | 2024-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad, polishing apparatus and method of manufacturing semiconductor package using the same |
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| JP2000286218A (en) * | 1999-03-30 | 2000-10-13 | Nikon Corp | Polishing member, polishing equipment and polishing method |
| JP2001212752A (en) | 2000-02-02 | 2001-08-07 | Nikon Corp | Polishing body, polishing device, semiconductor device manufacturing method and semiconductor device |
| US6346032B1 (en) * | 1999-09-30 | 2002-02-12 | Vlsi Technology, Inc. | Fluid dispensing fixed abrasive polishing pad |
| JP2004186392A (en) | 2002-12-03 | 2004-07-02 | Toshiba Ceramics Co Ltd | Polishing cloth |
| JP2006026844A (en) * | 2004-07-20 | 2006-02-02 | Fujitsu Ltd | Polishing pad, polishing device provided with it and sticking device |
| US20070202780A1 (en) * | 2006-02-24 | 2007-08-30 | Chung-Ching Feng | Polishing pad having a surface texture and method and apparatus for fabricating the same |
| US8002611B2 (en) * | 2006-12-27 | 2011-08-23 | Texas Instruments Incorporated | Chemical mechanical polishing pad having improved groove pattern |
| US8562389B2 (en) * | 2007-06-08 | 2013-10-22 | Applied Materials, Inc. | Thin polishing pad with window and molding process |
| JP2009082995A (en) * | 2007-09-27 | 2009-04-23 | Covalent Materials Corp | Lapping polishing cloth, and method of lapping silicon electrode for plasma etching device |
| JP2010045306A (en) | 2008-08-18 | 2010-02-25 | Kuraray Co Ltd | Polishing pad |
| TWM352127U (en) * | 2008-08-29 | 2009-03-01 | Bestac Advanced Material Co Ltd | Polishing pad |
| WO2012111502A1 (en) * | 2011-02-15 | 2012-08-23 | 東レ株式会社 | Polishing pad |
| US9114501B2 (en) * | 2011-07-15 | 2015-08-25 | Toray Industries, Inc. | Polishing pad |
| EP2732917A4 (en) * | 2011-07-15 | 2015-04-15 | Toray Industries | Polishing pad |
| EP2757577A4 (en) * | 2011-09-16 | 2015-05-20 | Toray Industries | Polishing pad |
-
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- 2012-09-13 JP JP2012542716A patent/JPWO2013039181A1/en active Pending
- 2012-09-13 US US14/344,988 patent/US20140378035A1/en not_active Abandoned
- 2012-09-13 KR KR1020147008470A patent/KR20140062095A/en not_active Application Discontinuation
- 2012-09-13 CN CN201280044813.XA patent/CN103782372A/en active Pending
- 2012-09-13 SG SG11201400614RA patent/SG11201400614RA/en unknown
- 2012-09-13 WO PCT/JP2012/073538 patent/WO2013039181A1/en active Application Filing
- 2012-09-13 EP EP12832538.8A patent/EP2757578A4/en not_active Withdrawn
- 2012-09-14 TW TW101133741A patent/TW201318766A/en unknown
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| US6749714B1 (en) * | 1999-03-30 | 2004-06-15 | Nikon Corporation | Polishing body, polisher, polishing method, and method for producing semiconductor device |
| CN1391506A (en) * | 1999-10-12 | 2003-01-15 | 杭纳科技股份有限公司 | Conditioner for polishing pad and method for manufacturing the same |
| JP2006165323A (en) * | 2004-12-08 | 2006-06-22 | Seiko Epson Corp | Polishing cloth for cmp processing, cmp device, and method for manufacturing semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113165141A (en) * | 2018-11-29 | 2021-07-23 | 株式会社大辉 | Polishing pad and method for manufacturing the same |
| CN114043380A (en) * | 2021-11-18 | 2022-02-15 | 北京烁科精微电子装备有限公司 | Grinding pad and grinding device with same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140378035A1 (en) | 2014-12-25 |
| WO2013039181A1 (en) | 2013-03-21 |
| TW201318766A (en) | 2013-05-16 |
| EP2757578A1 (en) | 2014-07-23 |
| EP2757578A4 (en) | 2015-05-20 |
| KR20140062095A (en) | 2014-05-22 |
| JPWO2013039181A1 (en) | 2015-03-26 |
| SG11201400614RA (en) | 2014-09-26 |
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Application publication date: 20140507 |