M352127 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種拋光墊，特別是有關於一種拋光面之槽底的寬度為 Omm之拋光塾。 【先前技術】 ’ 電子晶片係藉由沉積（Deposition)不同層化材料而形成，例如矽晶圓即是層 - 化材料的基材(Substrate)之一，當每一個新的材料層被沉積上時，常需要使用研 •磨或拋光的步驟，以去除多餘的沉積層材料，以使晶片平坦化，或是達成其他 的目的’而此種拋光的過程常被稱為化學機械拋光平坦化(Chemical Mechanieai Polishing，CMP)。由於晶片係由各種不同的薄膜(ThinFilm)材料層所堆積形成， 因此必須經過多次的CMP拋光步驟，才能將材料層由晶片的表面均勻去除，而 達到平坦化的目的。 而通常在進行拋光作業時，會於晶片與拋光墊之間導入化學拋光液 (sluny)，藉纽積之薄膜材料層與化學拋光液所產生之化學作用，或是與化學 拋光液中的顆粒發生機械作用，以移除部份晶片表面多餘之薄騎，但是由於 拋光液會存在於抛光墊與；之間，料使拋光墊與“之間完全貼合，而導 致拋光塾與晶片之間的摩擦力消失，因料了使拋光作業達驗佳的抛光效 果，目前最為普遍的作法是在拋光塾之表面上刻設溝槽，除了可增加抛光塾與 曰曰^之間的摩擦力，第二可_拋光液均勻分布於拋光墊之表面上，第三可使 懸汁於拋域巾的研磨職她辨雜由溝槽而流出。 」*般在拋光墊之表面上刻設溝槽後，溝槽之槽底會出現約90度的直 如第1圖所不’因此進行拋光作業時，拋光液中的研磨顆粒或因抛光 ^累積在刻痕的角落(死角）中無法流出’殘留的研磨顆粒或沉 ； /較大之顆粒’導致拋光物的表面刮傷與損壞。 5 M352127 【新型内容】 為解決上述問題，本創作之主要目的在於提供一種拋光墊，其拋光面之槽 底寬度為Omm，可避免懸浮於拋光液中的研磨顆粒或因拋光而產生的碎屑，會 於槽底形成較大之顆粒，導致待磨物受到傷而受損。 本創作之另一主要目的在於提供一種拋光墊，其拋光面之槽底之設計有助 於抛光液的流動。 本創作之又一主要目的在於提供一種拋光墊，其拋光墊之溝槽可確保拋光 液能均勻分佈於拋光面上。 丨依據上述之目的，本創作提供一種拋光面之槽底的寬度為〇mm之拋光墊。 此拋光墊具有一拋光面，並具有至少一溝槽設於拋光面上，其中溝槽具有一槽 口與一槽底，其特徵在於拋光面之槽底的寬度為〇mm，因此進行抛光作業時， 懸浮於拋光液中的研磨顆粒不易沉積於槽底，以避免待磨物因刮傷而受損。 因此本新型所k供之拋光塾，其槽底之寬度為〇mm的設計，除了可避免 研磨顆粒或拋光碎屑沉積於槽底，導致待磨物刮傷而受損外，其槽底的設計有 助於拋光液的流動，因此不會累積過多的拋光液於溝槽當中，可提供較佳之拋 光效果。 【實施方式】 由於本創作係揭露一種拋光墊，特別是有關於一種拋光面之槽底的寬度為M352127 VIII. New description: [New technical field] This creation is about a polishing pad, especially for a polished enamel with a width of Omm on the bottom of a polished surface. [Prior Art] 'Electronic wafers are formed by depositing different stratified materials, for example, a germanium wafer is one of the substrates of a layered material, when each new material layer is deposited. It is often necessary to use a grinding or polishing step to remove excess deposited material to flatten the wafer or achieve other purposes. This polishing process is often referred to as chemical mechanical polishing planarization ( Chemical Mechanieai Polishing, CMP). Since the wafer is formed by stacking various layers of thin film (ThinFilm) material, it is necessary to undergo multiple CMP polishing steps to uniformly remove the material layer from the surface of the wafer to achieve planarization. Usually, during the polishing operation, a chemical polishing liquid (sluny) is introduced between the wafer and the polishing pad, and the chemical action of the thin film material layer and the chemical polishing liquid or the particles in the chemical polishing liquid is used. Mechanical action occurs to remove excess thin rides on the surface of some of the wafers, but because the polishing liquid is present between the polishing pads and the material, the polishing pad is "completely fitted" and causes polishing between the wafer and the wafer. The friction disappears, and the most common practice is to engrave the surface of the polished crucible, in addition to increasing the friction between the polished crucible and the crucible. The second _ polishing liquid is evenly distributed on the surface of the polishing pad, and the third is to allow the squirting liquid to be sprayed on the surface of the polishing pad to discard and flow out from the groove. "*The groove is engraved on the surface of the polishing pad. After that, the groove bottom of the groove will appear at about 90 degrees as shown in Fig. 1. Therefore, when polishing is performed, the abrasive particles in the polishing liquid may not flow out due to polishing in the corners (dead corners) of the score. Residual abrasive particles or sinking; / Larger particles' cause scratches and damage to the surface of the polishing article. 5 M352127 [New content] In order to solve the above problems, the main purpose of this creation is to provide a polishing pad whose groove bottom has a width of Omm to avoid grinding particles suspended in the polishing liquid or debris generated by polishing. , a large particle will be formed at the bottom of the groove, causing the object to be ground to be damaged and damaged. Another main object of the present invention is to provide a polishing pad whose grooved bottom is designed to facilitate the flow of the polishing liquid. Another main object of the present invention is to provide a polishing pad whose grooves of the polishing pad ensure uniform distribution of the polishing liquid on the polishing surface.丨 In accordance with the above purpose, the present invention provides a polishing pad having a groove bottom having a width of 〇 mm. The polishing pad has a polishing surface and has at least one groove disposed on the polishing surface, wherein the groove has a notch and a groove bottom, and the groove bottom of the polishing surface has a width of 〇mm, thereby performing polishing operation At the time, the abrasive particles suspended in the polishing liquid are not easily deposited on the bottom of the groove to prevent the workpiece to be damaged due to scratches. Therefore, the polishing crucible provided by the present invention has a design with a width of 〇mm at the bottom of the groove, in addition to avoiding the deposition of abrasive particles or polishing debris on the bottom of the groove, resulting in scratching of the object to be ground and damage, the bottom of the groove The design contributes to the flow of the polishing liquid, so that it does not accumulate too much polishing liquid in the grooves, providing a better polishing effect. [Embodiment] Since the present invention discloses a polishing pad, in particular, the width of the groove bottom of a polishing surface is
Omm之拋光塾。由於’本創作所利用到的一些抛光塾之詳細製絲處理過程， 係利用現有技術辑成，故在下述說明巾，並*作完整描述。*且下述内文中 之圖式，'減被贿際之侧財完餘製，其侧餘表達與摘作特徵 有關之示意圖。 ' 第2圖係本創作拋光墊之一較佳實施例示意圖，拋光墊2〇具有—拋光面 21，並具有至少一溝槽22設該拋光面21上，其中溝槽22具有一槽口 221與― 槽底222 ’如第2圖之a_a’之剖面線的第3A圖所示，其特徵在於拋光面a之槽 6 M352127 底222的寬度為Omm。 第3A圖係本創作拋光墊之溝槽之一較佳實施例示意圖，此拋光墊2〇之槽 口 221至槽底222之間具有至少—斷自223，且槽口 221與槽底222具有不同的 寬度’其中斷面223與斷面223之間具有至少一轉折以形成一炎角，因此部份 斷面223可為-垂直於槽底222之平面，部分斷面如則可為一不垂直於槽底 222之斜面。 f 3B圖係本創作拋之溝槽之另—較佳實酬示意圖，此拋光墊2〇之 槽口 221至槽底222之間具有至少一斷面223,且槽口 221與槽底222具有不同 的寬度’其中斷面223大致呈- v型，故此斷面223係為一不垂直於槽底222 •之斜面。 第3C圖係本創作抛光墊之溝槽之又—較佳實施例示意圖 ，此拋光墊20之 槽口 221至槽底222之間具有至少—斷面223,且槽口 221與槽底222具有不同 的寬度’拋光面21與斷面223間具有至少—轉折以形成—夾角a卜其中爽角 A1之角度為大約90度〜大約120度。 第3D圖係本創作拋光墊之溝槽之再—較佳實施例示意圖 ，此拋光塾20之 槽口 221至槽底222之間具有至少一斷面坊，且槽口 221與槽底222具有不同 的寬度其中斷面223大致呈-u型’因此圓弧型槽底將有助於拋光液的流動。 • 本創作另提供一抛光塾之溝槽之再一較佳實施例，此拋光塾之槽口至槽底 之間具有至少-斷面’且槽口如與槽底边具有不同的寬度，其中斷面係為 一不規則之曲面。 上述之拋光墊可另具有-接合面，用以接合於另一拋光墊之拋光面上，以 形成二層式之抛光塾。 本創作所提供之拋光墊，其槽底之寬度為Gmm的設計，除了可避免研磨顆 粒或拋光碎屑沉積補底’導致贿物⑼積物之觸*受損之外，其槽 設計有助纖紐騎動，因此骑_過多_綠於賴#巾供 佳之拋光效果。 & 7 M352127 以上所述僅為本創作之較佳實施例而已，並非用以限定本創作之申請專利 權利；同時以上的描述，對於熟知本技術領域之專門人士應可明瞭及實施，因 =其:未脫離本創作所揭示之精神下所完成的等效改變或包含在下 迹之申請專利範圍中。 φ 【圖式簡單說明】 第1圖為一拋光墊之剖面圖（習知技術）。 第2圖為一拋光墊之正視圖。 第3Α圖為一拋光墊之溝槽的剖面圖。 第3Β圖為一抛光墊之溝槽的剖面圖。 第3C圖為—拋光墊之溝槽的剖面圖。 第3D圖為—拋光墊之溝槽的剖面圖。 【主要元件符號說明】 10 拋光墊 20 拋光墊 21 抛光面 22 溝槽 221 槽口 222 槽底 223 斷面 Α1 抛光面與斷面之夾角 8Polished enamel of Omm. Since the detailed silk processing process of some of the polishing enamels used in the present invention is compiled using the prior art, the following description will be given and the full description will be made. * And the following diagram in the text below, 'reducing the bribery side of the side of the financial system, the side of the expression and the characteristics of the abstract. 2 is a schematic view of a preferred embodiment of the polishing pad, the polishing pad 2 has a polishing surface 21, and has at least one groove 22 disposed on the polishing surface 21, wherein the groove 22 has a notch 221 The groove bottom 222' is shown in Fig. 3A of the hatching of a_a' in Fig. 2, and is characterized in that the groove 6 M352127 of the polishing surface a has a bottom 222 having a width of 0 mm. 3A is a schematic view of a preferred embodiment of the groove of the polishing pad of the present invention. The pad 221 to the groove bottom 222 of the polishing pad 2 are at least broken from 223, and the notch 221 and the groove bottom 222 have The different widths ′ have at least one turn between the section 223 and the section 223 to form an inflammatory angle, so that the partial section 223 can be perpendicular to the plane of the groove bottom 222, and a partial section can be a It is perpendicular to the slope of the groove bottom 222. The f 3B image is a schematic view of the groove of the present invention. The polishing pad 2 has a notch 223 between the notch 221 and the groove bottom 222, and the notch 221 and the groove bottom 222 have The different widths 'where the section 223 is substantially -v-shaped, so the section 223 is a slope which is not perpendicular to the bottom 222 of the groove. 3C is a schematic view of a preferred embodiment of the groove of the polishing pad. The pad 221 of the polishing pad 20 has at least a section 223 between the groove 222 and the groove bottom 222, and the groove 221 and the groove bottom 222 have The different widths 'the polished surface 21 and the section 223 have at least-turned to form an angle a. The angle of the refresh angle A1 is about 90 degrees to about 120 degrees. 3D is a schematic view of a preferred embodiment of the groove of the polishing pad. The groove 221 of the polishing pad 20 has at least one section between the groove bottom 222, and the notch 221 and the groove bottom 222 have The different widths of the section 223 are generally -u-shaped' so the arc-shaped groove bottom will contribute to the flow of the polishing liquid. • The present invention further provides a further preferred embodiment of a polished crucible having at least a section between the notch of the polishing crucible and the bottom of the trough, and wherein the notch has a different width from the bottom edge of the trough, wherein The section is an irregular surface. The polishing pad described above may have a bonding surface for bonding to the polishing surface of the other polishing pad to form a two-layer polishing pad. The polishing pad provided by this creation has a groove width of Gmm. In addition to avoiding the grinding particles or the polishing debris deposition, the groove design can help the damage caused by the bribe (9). The fiber is riding, so riding _ too much _ green Yu Lai # towel for better polishing effect. <7>M352127 The above description is only for the preferred embodiment of the present invention, and is not intended to limit the patent application rights of the present invention; and the above description should be understood and implemented by those skilled in the art, It is to be understood that the equivalent changes made in the spirit of the present disclosure are included in the scope of the patent application. φ [Simple description of the drawing] Fig. 1 is a cross-sectional view of a polishing pad (known technique). Figure 2 is a front view of a polishing pad. Figure 3 is a cross-sectional view of a groove of a polishing pad. Figure 3 is a cross-sectional view of a groove of a polishing pad. Figure 3C is a cross-sectional view of the groove of the polishing pad. Figure 3D is a cross-sectional view of the groove of the polishing pad. [Main component symbol description] 10 Polishing pad 20 Polishing pad 21 Polishing surface 22 Groove 221 Notch 222 Groove bottom 223 Section Α1 Angle between polished surface and section 8