CN103764338A - Single-shot laser ablation of a metal film on a polymer membrane - Google Patents
Single-shot laser ablation of a metal film on a polymer membrane Download PDFInfo
- Publication number
- CN103764338A CN103764338A CN201280026523.2A CN201280026523A CN103764338A CN 103764338 A CN103764338 A CN 103764338A CN 201280026523 A CN201280026523 A CN 201280026523A CN 103764338 A CN103764338 A CN 103764338A
- Authority
- CN
- China
- Prior art keywords
- approximately
- polymer
- metal
- metal film
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/14—Titanium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
- B23K2103/26—Alloys of Nickel and Cobalt and Chromium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Laser Beam Processing (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
A method comprises spatially selectively irradiating in a predetermined pattern with an output beam of a laser system an interface between a polymer substrate and a metal film on the polymer substrate. The polymer substrate is substantially transparent to the output beam of the laser system; the metal film absorbs a substantial fraction of the output beam. Laser system output comprises a sequence of pulses. Beam size at the polymer/metal interface, pulse energy, and pulse duration are selected so that each pulse from the laser system that irradiates an area of the polymer/metal interface substantially completely removes by ablation the metal film from at least a portion of the irradiated area without substantially altering the surfaces or bulk of the polymer substrate and without leaving on the polymer substrate or on remaining areas of the metal film substantial residue of metal that resolidified after being melted by the laser irradiation.
Description
Related application
The name that the application requires Vladimir G.Kozlov to submit on April 25th, 2011 is called U.S.'s non-provisional application number 13/093 of " the single-pulse laser ablation of the metal film on a kind of membrane for polymer ", 683 priority, by reference described non-provisional application is incorporated to herein herein, as by it completely in this proposition.
Technical field
The field of the invention relates to the materials processing of the spatial selectivity that uses laser.Especially, show and described following apparatus and method, wherein use a kind of laser system from a kind of polymeric substrates spatial selectivity remove a kind of metal coating and do not damage this polymeric substrates, and on this substrate, do not leave melting curing metal residue again.
Background technology
Use laser to develop the materials processing technology of multiple spatial selectivity, these technology are applied to metal, are applied to polymer or are applied to other materials.The example of selecting comprises:
The U.S. Patent number 3,720,784 that is called " record and display packing and device " in 03/13/1973 name of authorizing the people such as Maydan;
The U.S. Patent number 4,000,492 that is called " for the metal film recording medium of laser inscription " in 12/28/1976 name of authorizing Willens;
The U.S. Patent number 4,752,455 that is called " the micro-manufacture of pulsed laser " in 06/21/1988 name of authorizing Mayer;
The U.S. Patent number 5,093,279 that is called " laser ablation inlaying process " in 03/03/1992 name of authorizing the people such as Andreshak;
The U.S. Patent number 5,104,480 that is called " using a kind of laser directly to make metal pattern on the invalid surface of heat " in 04/14/1992 name of authorizing the people such as Wojnarowski;
The U.S. Patent number 5,569,398 that is called " for laser system and the method for selective finishing film " in 10/29/1996 name of authorizing the people such as Sun;
The U.S. Patent number 6,036,809 that is called " for discharge a kind of method of membrane structure from a kind of substrate " in 03/14/2000 name of authorizing Kelly etc.;
The U.S. Patent number 6,183,588 that is called " for a kind of membrane structure being transferred to a kind of method of substrate " in 02/06/2001 name of authorizing Kelly etc.;
The U.S. Patent number 6,531,679 that is called " for the laser machine processing method of organic material " in 03/11/2003 name of authorizing the people such as Heerman;
The U.S. Patent number 6,833,222 that is called " using laser for repairing a kind of method and apparatus of protecting film " in 12/21/2004 name of authorizing the people such as Buzerak;
The U.S. Patent number 6,949,215 that is called " for by the method for a kind of three-dimensional structure of Laser Processing " in 09/27/2005 name of authorizing the people such as Yamada;
The U.S. Patent number 7,106,507 that is called " flexible wire grid polarizer and its manufacture method " in 09/12/2006 name of authorizing the people such as Lee;
The U.S. Patent number 7,176,053 that is called " laser ablation methods that has machine equipment for the manufacture of high-performance " in 02/13/2007 name of authorizing Dimmler;
The U.S. Patent number 7,220,371 that is called " wire grid polarizer and its production method " in 05/22/2007 name of authorizing Suganuma;
The U.S. Patent number 7,332,263 that is called " for making a kind of organic light-emitting diode equipment form the method for pattern " in 02/19/2008 name of authorizing the people such as Addington;
The U.S. Patent number 7,692,860 that is called " wire grid polarizer and its manufacture method " in 04/06/2010 name of authorizing the people such as Sato;
E.Hunger, H.Pietsch, S.Petzoldt and E.Matthias; " the multiple-pulse ablation of polymer and metal film under 248nm "; Applied surface science (Applied Surface Science), Vol.54, pp.227-231(1992);
Matthias Bolle and Sylvain Lazare; " on Si or metal substrate by the low-intensity UV light beam ablation thin polymer film of PRK or mercury lamp: the advantage that elliptical polarization rate is measured "; Applied surface science, Vol.54, pp.471-476, (1992);
J.Kr ü ger and W.Kautek; " the femtosecond pulse processing of metal and semiconductive thin film "; Induced with laser processing film (
laser-Induced Thin Film Processing), J.J.Dubowski, ed; Proc.SPIE Vol.2403, p.436(1995);
P.Simon and J.Ihlemann; " by ultrashort UV-laser pulse machined metal and semi-conductive submicrometer structure "; Applied Physics A(Physics A), Vol.63, p.505(1996);
S.Nolte, C.Momma, H.Jacobs, A.T ü nnermann, B.N.Chichkov, B.Wellegehausen and H.Welling; " by ultrashort laser pulse ablate metals "; The journal B(Journal of the Optical Society of America B of Optical Society of America), Vol.14, No.10, pp.2716-2722(OCT1997);
Itsunari Yamada, Kenji Kintaka, Junji Nishii, Satoshi Akioka, Yutaka Yamagishi, and Mitsunori Saito; " use the middle infrared (Mid-IR) grid type polarizer of silicide "; Optics letter (Optics Letters), Vol.33, No.3, pp.258-260(10SEP2008);
Itsunari Yamada, Junji Nishii and Mitsunori Saito; " tungsten silicide wire grid polarizer is in modeling, manufacture and the sign of infrared region "; Application Optics, Vol.47, No.26, pp.4735-4738(2008);
Andrew C.Strikwerda, Kebin Fan, Hu Tao, Daniel V.Pilon, Xin Zhang and Richard D.Averitt; " the meander line structure of the electronic split-ring resonator of birefringence and quarter-wave plate is in the comparison of Terahertz frequency "; Optics news flash (Optics Express), Vol.17, No.1, pp.136-149(5JAN2009); With
Yong Ma, A.Khalid, Timothy D.Drysdale and David R.S.Cumming; " on low absorbing polymeric substrate, directly manufacture terahertz optics equipment "; Optics letter, Vol.34, No.10, pp.1555-1557(1552009).
The Maydan(U.S. 3,720,784) disclose and used a kind of pulsed of visible laser to export the holes that form different sizes in the thin bismuth film on a kind of transparent polyester film.Each hole forms by pulse (3-20nJ, 20-30ns, 5-10 μ m beam size), on the region being approximately directly proportional to pulse energy, heat this bismuth film extremely higher than its fusing point (272 ℃), and surface tension is stretched to molten metal the periphery in the hole of new formation.The material of this fusing solidifies again, in the surrounding in hole, leaves the edge as pitfall.By the region of melting, the energy therefore transmitting by corresponding laser pulse is determined the size in each hole.
The Dimmler(U.S. 7,176,053) and the Addington(U.S. 7,332,263) all disclose use UV Laser Processing organic transistor or LED, wherein all structure sheafs (for example, metal level, organic layer and oxide skin(coating)) absorb this laser emission and are melted.
Summary of the invention
A kind ofly comprise spatial selectivity and with a kind of predetermined pattern, be radiated at the method at the interface between polymeric substrates and a kind of metal coating on this polymeric substrates with a kind of output beam of laser system.This polymeric substrates is transparent in fact to the output beam of this laser system.The output of this laser system comprises laser pulse sequence.Select the beam size in this polymer/metal interface, pulse energy and the pulse duration of this laser system, thereby make from each pulse in a region this laser system, that irradiate this polymer/metal interface, at least a portion in irradiated region in fact fully to be removed by ablation, and can not change in fact surface or the body of this polymeric substrates and can on the remaining region of this polymeric substrates or metal film, not leave the substantial metal residue of solidifying again after passing through Ear Mucosa Treated by He Ne Laser Irradiation melting.
Can irradiate this polymer/metal interface through this polymeric substrates.This polymeric substrates can comprise one for example thickness be less than approximately 100 μ m, or thickness is less than the membrane for polymer that approximately 10 μ m or thickness are less than approximately 5 μ m.Such as a kind of like this membrane for polymer can only mechanically be supported in part its periphery, unirradiated.
For example, this metal coating thickness can be between about 1nm and about 100nm, or thickness is between about 5nm and about 50nm, and can comprise that a kind of fusing point is greater than in fact the metal or alloy of the fusing point of this polymeric substrates (for example chromium, gold, silver, copper, nickel or other).
The output of this laser system is characterised in that, wavelength between about 500nm and approximately 5 μ m (for example, 532nm or 1064nm), pulse duration is for example less than about 100ps(, between about 10ps and about 40ps), pulse energy for example, between (, between approximately 0.1 μ J and approximately 2 μ J) between approximately 0.1 μ J and approximately 5 μ J, and beam size for example, between (, between approximately 10 μ m and approximately 40 μ m) between approximately 1 μ m and approximately 100 μ m.
An example of the pattern that this is predetermined comprises a series of substantially parallel, equal lines of spacing substantially, thereby stay this metal level on this membrane for polymer after irradiating, is partly included in a series of substantially parallel, equal wires of spacing substantially on this membrane for polymer.These wires for example can have, between approximately 5 μ m and approximately 50 μ m, or the spacing between approximately 10 μ m and approximately 30 μ m.These wires can play wire grid polarizer on this membrane for polymer, for for example having, and between about 1THz and about 50THz, or the radiation of the frequency between about 1THz and about 10THz.
Diagram and in following written explanation or appended claim on the basis of disclosed exemplary embodiment in reference to accompanying drawing, the object and the advantage that relate to spatial selectivity and remove a kind of metal coating from a kind of polymeric substrates can become clear.
Accompanying drawing explanation
Fig. 1 be one for spatial selectivity irradiate the metal film on a kind of membrane for polymer lasing light emitter and light beam turn to machine-processed schematic diagram.
Fig. 2 A, 2B and 2C schematically irradiation and the metal at diagram polymer/metal interface remove from the ablation of this polymer.
Fig. 3 is the microphoto of a polymer film, by Ear Mucosa Treated by He Ne Laser Irradiation, a kind of metal film is removed from the parallel lines of this polymer film.
Embodiment shown in accompanying drawing is exemplary, and should not be regarded as limiting the scope of this disclosure or claims.
The specific embodiment
A kind of comprise spatial selectivity with a kind of a kind of output beam 30 of laser system 10 with a kind of predetermined patterned illumination a kind of method (Fig. 1) between polymeric substrates 40 and a kind of metal film on this polymeric substrates 40 or the interface between coating 50, to remove this metal film from those irradiated regions.10 output beam 30 of 40 pairs of these laser systems of this polymeric substrates is transparent in fact, thereby this metal film 50 absorbs at least most incident output beam 30.The output of this laser system comprises laser pulse sequence.Select the beam size in this polymer/metal interface, pulse energy and the pulse duration of this laser system, thereby make from each pulse in a region this laser system, that irradiate this polymer/metal interface, at least a portion in irradiated region in fact fully to be removed by ablation, and can not change in fact surface or the body of this polymeric substrates and can on the remaining region of this polymeric substrates or metal film, not leave the substantial metal residue of solidifying again after passing through Ear Mucosa Treated by He Ne Laser Irradiation melting.
Typically in example, the output of this laser system is characterised in that, wavelength is between about 500nm and approximately 5 μ m, pulse duration is less than the full duration that about 100ps(is normally defined the half-shadow general goal of temporal intensity distributions, be FWHM), pulse energy is between approximately 0.1 μ J and approximately 5 μ J, and beam size (in irradiated polymer/metal interface) (is normally defined the 1/e between spatial intensity distribution between approximately 1 μ m and approximately 50 μ m
2spacing between point, i.e. FW1/e
2).Although can use any repetition rate available, that be applicable to, expectation or needs, this pulse repetition rate is conventionally between about 100kHz and about 1MHz.Such parameter by many kinds of business can with lasing light emitter be easily to meet.Can use a kind of optical fiber laser that work, diode pumping, locked mode under near-infrared, to produce for example Laser output of wavelength between about 1000nm and about 1100nm.In the example of other frequencys multiplication, and if need or expectation, can further use fiber amplifier to produce the Laser output of wavelength between about 500nm and about 550nm.A specific example comprises fundamental wavelength 1064nm or harmonic wavelength 532nm, about 30ps of pulse duration, pulse energy is between approximately 0.1 μ J and approximately 2 μ J, the about 200kHz of pulse repetition rate, and beam size (in this metal/polymer interface) is between approximately 10 μ m and approximately 40 μ m.Given all laser parameters are exemplary; In the scope of the disclosure or appended claim, can use the laser system that represents other performance parameters.
Can be included in the nickel coating on a kind of polyester diaphragm substrate with the common example that method disclosed herein spatially forms the metal/polymer system of pattern.For example, thickness is for example less than approximately 100 μ m(, and thickness is less than approximately 10 μ m or approximately 5 μ m)
the available a kind of thickness of film (that is, biaxially oriented ground PET or BoPET) between between approximately 1 and about 100nm(for example, thickness between between about 5nm and about 50nm) nickel film apply.Conventionally by measuring the optical transmittance of this metal film, estimate the thickness of this metallic film.
Can use any applicable polymeric substrates or barrier film; This membrane for polymer or substrate should be to being transparent in fact for processing the wavelength of output beam of this laser system of this metal film.Applicable polymeric substrates or the example of barrier film can comprise
or other polyester, nitrocellulose, cellulose acetate or other cellulose esters, polyethylene, various fluoropolymer polymer etc.; Other example comprises any polymer that is suitable for making diaphragm.Can use any applicable metal film or alloy film or coating; This metal film or alloy film or coating should absorb from this laser system the incident pulse of quite a few.Example can comprise silver, gold, tungsten, copper, chromium, molybdenum, nickel, titanium etc.
In preferred an arrangement, from the pulse of this laser system, by this polymeric substrates or barrier film 40, propagate and focus on to realize the beam size (Fig. 2 A-2C) in the expectation of polymer/metal interface.This polymer/metal interface can but the focus minimum dimension of light beam (that is) that do not need to be placed on light beam 30 locate.If if this polymer side at expectation or this polymer/metal interface is obstructed, this polymer/metal interface can change into from an other side irradiates (that is, from supporting a side of metal film 50).The transparency of this polymer under optical maser wavelength guarantees that laser pulse does not change in fact (for example melt, damage or other change) this surface of polymer material or body.(for example, the 1 μ J of 30ps obtains about 10GW/cm at 10 μ m points of irradiation to the high peak energies density of each laser pulse
2peak energy denisty) make it possible to by ablation, fully remove this metal film 50(Fig. 2 B substantially from the region of at least middle body of the membrane for polymer 40 by pulse irradiation); Under the beam size and pulse energy typically used, a pulse is typically fully removed the whole metals except the edge of irradiation area substantially.In not clear ablation process, whether relate to fusing; Be clear that by after Ear Mucosa Treated by He Ne Laser Irradiation melting on this membrane for polymer 40 or on the remaining region 50 of metal film, there is no substantial curing metal residue (Fig. 2 C) again.The remarkable difference of the ablation Zhe Shiyu Maydan(U.S. 3,720,784), this ablation disclose in a kind of metal film, formed by the pitfall shape edge of the molten metal solidifying again around hole.
Although do not mention this point, the method for Maydan must cause some damage or the change of this membrane for polymer.Disclosed bismuth metal film has the fusing point of 272 ℃, is greater than below
the fusing point of barrier film (254 ℃).At this
the existence of the bismuth melting on barrier film means that the part on this membrane for polymer surface also must melt, thereby damages its surface.Under the background of Maydan disclosure, perhaps, this damage is acceptable, but it may be unacceptable under other backgrounds, (for example, forming a kind of transmissive element such as a kind of wire grid polarizer, or form a kind of flexible electronic circuit or solar cell).
Use has in fact higher than the metal or alloy coating of the fusing point of this polymeric substrates or barrier film and may expect.Therefore, this metal film can comprise, for example chromium (mp1907 ℃), gold (mp1064 ℃), silver (mp962 ℃), copper (mp1085 ℃), nickel (mp1455 ℃), tungsten (mp3422 ℃), molybdenum (mp2623 ℃), titanium (mp1668 ℃), or other have the metal of fully high fusing point.The metal material that use has a relatively high fusing point (for example, higher than approximately 500 ℃, or higher than approximately 700 ℃) can reduce by Ear Mucosa Treated by He Ne Laser Irradiation institute molten metal and will stay on this membrane for polymer or on substrate and curing possibility again, and and then reduce the possibility that the heat being released into when solidify material by this fusing and it again in this polymer damages this polymeric substrates or barrier film.For example, when on a thin membrane for polymer, (, thickness is less than 100 μ m, or thickness is less than approximately 5 or 10 μ m) makes a kind of metal coating spatially form pattern, this feature can be especially expectation.Anyly by molten metal, diffuse to heat in this membrane for polymer and will cause in thinner polymer film correspondingly higher intensification, thereby increase the possibility that this heat radiation may cause this barrier film fusing.During this metal coating is spatially formed to pattern, eliminate this heat radiation (by eliminating substantially the existence of molten metal on this membrane for polymer) and reduce the possibility of damaging barrier film by fusing.In addition, by preventing substantially the solidification process again of the molten metal on this polymeric substrates, can between remaining metal coating and the region of the polymer surfaces exposing by this metal coating of ablation, form one neat, edge (for example,, as in Fig. 3) clearly.
Ablation of metals method disclosed herein is suitable in a kind of metal film on a kind of polymeric substrates, especially thin polymer barrier film (for example, thickness is less than 100 μ m, or thickness is less than approximately 5 or 10 μ m) space for the creativity pattern.In one typically arranges, a kind of like this thin polymer barrier film is only mechanically supported in part its periphery, unirradiated.For example, along with barrier film is only fixed and supports at the periphery of barrier film by this frame or ring, the frame that this membrane for polymer 40 can be by rigidity substantially or encircle 42(Fig. 1) be supported.The middle body of this barrier film (that is, in frame or ring) will not be kept off by frame or loop resistance will, and therefore be exposed so that can be irradiated by laser system.After irradiating, the membrane for polymer with the metal coating that has formed space pattern of gained can be still fixed and be supported by frame or ring, maybe can be by its removal and in another structure, reset as needed or desired.
As mentioned above, by the output pulse by this laser system, to its direct irradiation, this metal film spatial selectivity ground can be removed to (do not irradiate this polymer/metal interface or propagate light beam through this membrane for polymer, until this metal coating is removed).In this arranges, whole thickness that must be by this metal coating of laser pulse ablation to substantially fully by it irradiated region from this polymer remove.On the other hand, by passing this polymeric substrates propagated laser pulse and irradiating this polymer/metal interface from this side, the initial ablation of this metal contacting with polymer can cause this part of metal coating to serve as releasing layer.Once it is ablated to be attached to this metal coating part of this polymer surfaces, metal thereon can leave from this polymer surfaces (Fig. 2 B schematically illustrates the plume 54 that sprays metal).This can have the effect of the expectation made us as follows: reduce for removing substantially the required pulse energy of metal coating of irradiating completely, and then further reduce undesirable damage of this membrane for polymer or the possibility of other changes by laser pulse.
So-called " back side " ablation of describing in last paragraph (i.e. " lift-off " method) makes it possible to form other space pattern with laser pulse.Can by one or more other arrangement layers at least a portion of this metal coating, that is, make this metal coating at this polymeric substrates and be somebody's turn to do between (these) other layer.The ablation that spatial selectivity ground irradiates the metal level of this polymer/metal interface (by this polymer) and gained also can cause the regional space from irradiating optionally to remove one or more other layers.This metal coating serves as the releasing layer of laser activation and makes it possible to makes one or more other layers form space pattern with laser, comprises the material layer that can not otherwise remove by laser pulse.Space pattern formation method based on laser disclosed herein or that propose claim is used in and on a kind of polymeric substrates or barrier film, manufactures various structures, such as electronic circuit, photoelectricity or photovoltaic component, thin film transistor (TFT) or diode, MEMS structure etc.These one or more other layers can comprise one or more semiconductor layers, dielectric layer, insulating barrier, conductive layer, metal level, polymeric layer, crystallizing layer, glassy layer, organic layer, inorganic layer or other applicable material layers, individually or in combination, to form structure or the parts of expectation.
Described at last paragraph, use a kind of thin metal coating also can make the layer of these coverings spatially form pattern and not melt those layers as a kind of releasing layer of laser activation.Therefore, the method that forms pattern on space disclosed herein can be advantageously used in a plurality of patterned layer, and these patterned layer will be by melting damaged or inactivation near the edge of pattern, for example, and for the semiconductor film of solar cell.On the contrary, the disclosed method of Maydan, Dimmler and Addington causes the fusing of the material removed from substrate.
A high pulse repetition rates, and by a single laser pulse, this metal coating is removed substantially completely, make can " write " fast space pattern by method disclosed herein or proposition claim.For example, the beam size of approximately 10 to 40 μ m and approximately 100 laser pulse repetition rate to 200kHz can obtain linear " writing rate " in the magnitude of about every number of seconds rice.It should be noted that in order to realize the spatial selectivity of the expectation at this polymer/metal interface and irradiate, the one or both in this polymeric substrates or this laser beam can relative to each other move.In an example, this polymeric substrates or barrier film (having this metal coating) can keep fixing, yet the optical beam manipulation parts of this laser beam by controlled movement (for example, stepper drive or servo-drive revolving mirror or translating type prism, be contained in the mirror on galvanometer, or other applicable arrangements), across the space pattern of its expectation, scan.In another example, this laser beam points to a fixing position, and this polymeric substrates with metal coating is scanned (for example, being contained on stepper drive or servo-drive twin shaft translation device) according to the space pattern of expectation.Any one in these situations can be called " beam flying ", and in Fig. 1, installs this beam flying of 20 general proxy.In these two examples, if needed or expectation, can use a kind of breaker or modulator to stop or to transmit this laser beam, so that can remove this metal coating from the discontinuous region of this polymeric substrates or barrier film by a kind of controlled mode.
By irradiating this polymer/metal interface according to a kind of corresponding, predetermined space pattern, can use method disclosed herein or proposition claim to produce the space pattern any applicable or expectation of this metal film on this membrane for polymer.In an example, this predetermined irradiation pattern comprises a series of lines 46 substantially parallel, that spacing is equal substantially, thereby after irradiating, stay part on this membrane for polymer 40, metal level 50 and comprise a series of wire 56(Fig. 3 substantially parallel, that spacing is equal substantially on this membrane for polymer 40).Line width or the distance between centers of tracks (i.e. the distance from Yi Tiaoxian center to next Tiao Xian center) that can produce any expectation, be subject to the attainable beam size of minimum (limiting by standard mode by wavelength and laser beam quality) of light-beam scanner and the restriction of minimum resolution.Be less than approximately 50 μ m, be less than approximately 30 μ m, or the distance between centers of tracks that is less than approximately 20 μ m is proved, and less spacing can easily realize.As shown in Figure 3, due to the circular beam profile of this illumination beam, the edge of these filaments may be fan-shaped.If needed or expectation, can by with spacing more closely pulse irradiation reduce and have fan-shaped shape, or by using beam shaping optics to form the beam profile being more suitable for, rectangle in a way for example.
The thin polymer film (being for example less than approximately 10 μ m or approximately 5 μ m) with the pattern wiry that this spacing is equal can be well with the wire grid polarizer that acts on so-called terahertz emission.In this frequency range (from about 1THz until 10 or 20THz even), this film reduces or eliminates substantially Fabry-Perot (Fabry-Perot) effect that the reflection by membrane surface causes.This wiregrating with spacing approximately 30 μ m can the radiation of about 10THz at the most of polarization frequency.In the scope of the disclosure or appended claim, for other frequency range, can use other spacing.Similarly, in the scope of the disclosure or appended claim, can use and produce other optics, electronics or mechanical functional other space patterns.
Meaning is sought for, and disclosed exemplary and the equivalent of method should fall into the scope of this disclosure or the claim of enclosing.Meaning is sought for, in the scope in this disclosure or claims still in, can revise exemplary and the method for disclosure and their equivalent.
For smoothness illustrates object of the present disclosure, in above detailed description, may be by different characteristic sets together in several exemplary embodiments.This method of this disclosure should not be interpreted as reflecting following intention: the embodiment of any proposition claim need to have than the more feature of the feature of clearly enumerating in corresponding claim.But as appended claim reflection, theme of the present invention can be to be less than all features of independent disclosed exemplary embodiment.Therefore, claims are incorporated in detailed description hereby, and wherein every claim self exists as an embodiment disclosing separately.Yet, this disclosure and claims also should be understood to impliedly disclose there is the feature disclosed or claim that proposes any applicable combination (, the perhaps not combination of the feature of mutual exclusion mutually mutually) any embodiment, is included in those Feature Combinations that this does not clearly disclose.Should further notice, the scope of claims needn't contain whole theme disclosed here.
For the object of the disclosure and appended claim, conjunction "or" should explain to being included property that (for example, " dog or a cat " will be interpreted as " dog or cat or the two "; For example, " dog, a cat or a mouse " will be interpreted as " dog or cat or mouse or any the two or all threes "), unless: (i) point out in addition clearly, for example, by using " ... or (either ... or); " " only one of them, " or similarly language; Or two or more optional things of (ii) enumerating are mutually exclusive under concrete background, "or" will only comprise those combinations that relate to non-mutually exclusive optional thing in this case.For the object of this disclosure or claims, word " comprises ", " comprising ", " have " with and distortion, no matter occur wherein, should be understood to be open term, just as phrase " at least ", be added after its each example, there is identical implication.
In claims, if wished, in an equipment claim, call 35USC § 112
6 clause, word " device " will appear among this equipment claim so.If wish to call those clauses in a claim to a method, so word " for ... a step " will appear in the method claim.On the contrary, if word " device " or " for ... a step " do not appear in a claim, be not intended to so call 35USC § 112 in this claim
6 clause.
Claims (35)
1. comprise spatial selectivity by an a kind of method of output beam interface between a kind of metal film on a kind of polymeric substrates and this polymeric substrates with a kind of predetermined patterned illumination of laser system, wherein:
(a) this polymeric substrates is transparent in fact to the output beam of this laser system;
(b) output of this laser system comprises a pulse train; With
(c) select the beam size in this polymer/metal interface, pulse energy, wavelength and the pulse duration of this laser system, thereby make from each pulse in a region this laser system, that irradiate this polymer/metal interface, at least a portion in irradiated region in fact fully to be removed by ablation, and can not change in fact surface or the body of this polymeric substrates and can on the remaining region of this polymeric substrates or metal film, not leave the substantial metal residue of solidifying again after passing through Ear Mucosa Treated by He Ne Laser Irradiation melting.
2. the method for claim 1, wherein irradiates this polymer/metal interface by the pulse through this polymeric substrates.
3. the method as described in any one in claim 1 or 2, wherein this polymeric substrates comprises that a thickness is less than the membrane for polymer of approximately 100 μ m.
4. method as claimed in claim 3, wherein this membrane for polymer comprises a kind of polyester diaphragm.
5. method as claimed in claim 3, wherein this membrane for polymer is only mechanically supported in part its periphery, unirradiated.
6. method as claimed in claim 3, wherein the thickness of this membrane for polymer is less than approximately 10 μ m.
7. the method for claim 1, wherein this polymeric substrates comprises that a thickness is less than the membrane for polymer of approximately 100 μ m.
8. method as claimed in claim 7, wherein this membrane for polymer comprises a kind of polyester diaphragm.
9. method as claimed in claim 7, wherein this membrane for polymer is only mechanically supported in part its periphery, unirradiated.
10. method as claimed in claim 7, wherein the thickness of this membrane for polymer is less than approximately 10 μ m.
11. methods described in any one in claim 1,2 or 7 – 10, wherein this metal film comprises the metal or alloy that a kind of fusing point is greater than approximately 500 ℃.
12. methods as claimed in claim 11, wherein this metal film comprises the metal or alloy that a kind of fusing point is greater than approximately 700 ℃.
13. methods as claimed in claim 11, wherein this metal film comprises chromium, gold, silver, copper, nickel, tungsten, titanium or molybdenum.
14. the method for claim 1, wherein this metal film comprises the metal or alloy that a kind of fusing point is greater than approximately 500 ℃.
15. methods as claimed in claim 14, wherein this metal film comprises the metal or alloy that a kind of fusing point is greater than approximately 700 ℃.
16. methods as claimed in claim 14, wherein this metal film comprises chromium, gold, silver, copper, nickel, tungsten, titanium or molybdenum.
17. methods as described in any one in claim 1,2,7 – 10 or 14 – 16, wherein the thickness of this metal film is less than about 100nm.
18. methods as claimed in claim 17, wherein the thickness of this metal film is between about 5nm and about 50nm.
19. the method for claim 1, wherein the thickness of this metal film is less than about 100nm.
20. methods as claimed in claim 19, wherein the thickness of this metal film is between about 5nm and about 50nm.
21. methods as described in any one in claim 1,2,7 – 10,14 – 16,19 or 20, wherein the output of this laser system is characterised in that, at the wavelength of interface between about 500nm and approximately 5 μ m, pulse duration is less than about 100ps, pulse energy is between approximately 0.1 μ J and approximately 5 μ J, and beam size is between approximately 1 μ m and approximately 50 μ m.
22. methods as claimed in claim 21, wherein the output of this laser system is characterised in that, wavelength is between about 500nm and about 1100nm, pulse duration is less than about 50ps, pulse energy is between approximately 0.1 μ J and approximately 2 μ J, and beam size is between approximately 10 μ m and approximately 40 μ m.
23. the method for claim 1, wherein the output of this laser system is characterised in that, at the wavelength of interface between about 500nm and approximately 5 μ m, pulse duration is less than about 100ps, pulse energy is between approximately 0.1 μ J and approximately 5 μ J, and beam size is between approximately 1 μ m and approximately 50 μ m.
24. methods as claimed in claim 23, wherein the output of this laser system is characterised in that, wavelength is between about 500nm and about 1100nm, pulse duration is less than about 50ps, pulse energy is between approximately 0.1 μ J and approximately 2 μ J, and beam size is between approximately 10 μ m and approximately 40 μ m.
25. methods as described in any one in claim 1,2,7 – 10,14 – 16,19,20,23 or 24, wherein at least a portion of this metal film, arrange one or more other layers, and these other layers are removed in the region at those polymer/metal interfaces that the irradiation of the spatial selectivity at this polymer/metal interface is removed from this metal membrane-coating ablation, and can not melt in fact these other layers.
26. methods as claimed in claim 25, wherein these one or more other layers comprise one or more semiconductor layers, dielectric layer, insulating barrier, conductive layer, metal level, polymeric layer, crystallizing layer, glassy layer, organic layer or inorganic layer.
27. the method for claim 1, wherein at least a portion of this metal film, arrange one or more other layers, and these other layers are removed in the region at those polymer/metal interfaces that the irradiation of the spatial selectivity at this polymer/metal interface is removed from this metal membrane-coating ablation, and can not melt in fact these other layers.
28. methods as claimed in claim 27, wherein these one or more other layers comprise one or more semiconductor layers, dielectric layer, insulating barrier, conductive layer, metal level, polymeric layer, crystallizing layer, glassy layer, organic layer or inorganic layer.
29. 1 kinds of a kind of methods with the interface between a kind of metal film on a kind of polymeric substrates of a kind of predetermined patterned illumination and this polymeric substrates that comprise spatial selectivity with output beam of laser system, wherein:
(a) this polymeric substrates is transparent in fact to the output beam of this laser system;
(b) output of this laser system comprises a pulse train;
(c) select the beam size in this polymer/metal interface, pulse energy, wavelength and the pulse duration of this laser system, thereby make from each pulse in a region this laser system, that irradiate this polymer/metal interface, at least a portion in irradiated region in fact fully to be removed by ablation, and can not change in fact surface or the body of this polymeric substrates and can on the remaining region of this polymeric substrates or metal film, not leave the substantial metal residue of solidifying again after passing through Ear Mucosa Treated by He Ne Laser Irradiation melting;
(d) by these pulses through this polymeric substrates, irradiate this polymer/metal interface;
(e) this polymeric substrates comprises that a kind of thickness is less than the polyester diaphragm of approximately 10 μ m;
(f) this membrane for polymer is only mechanically supported in part its periphery, unirradiated;
(g) this metal film comprises chromium, gold, silver, copper, nickel, tungsten, titanium or molybdenum, and thickness is between about 5nm and about 50nm; With
(h) output of this laser system is characterised in that, wavelength 532nm or 1064nm, and the pulse duration is less than about 100ps, and pulse energy is between approximately 0.1 μ J and approximately 2 μ J, and beam size is between approximately 10 μ m and approximately 100 μ m.
30. methods as described in any one in claim 1,2,7 – 10,14 – 16,19,20,23,24 or 27 – 29, wherein this predetermined pattern comprises a series of substantially parallel, equal lines of spacing substantially, thereby a part of staying this metal film on this membrane for polymer after making to irradiate is included in a series of substantially parallel, the equal wire of spacing substantially on this membrane for polymer.
31. methods as claimed in claim 30, wherein this wire has the spacing between approximately 5 μ m and approximately 50 μ m.
32. methods as claimed in claim 31, wherein this wire on this this membrane for polymer plays wire grid polarizer, the radiation for frequency between about 1THz and about 20THz.
33. methods as claimed in claim 31, wherein this wire has the spacing between approximately 10 μ m and approximately 30 μ m.
34. methods as claimed in claim 33, wherein this wire on this membrane for polymer plays wire grid polarizer, the radiation for frequency between about 1THz and about 10THz.
A kind of wire grid polarizer that 35. methods according to claim 31 are manufactured.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/093,683 | 2011-04-25 | ||
| US13/093,683 US8593727B2 (en) | 2011-04-25 | 2011-04-25 | Single-shot laser ablation of a metal film on a polymer membrane |
| PCT/US2012/035067 WO2012149070A2 (en) | 2011-04-25 | 2012-04-25 | Single-shot laser ablation of a metal film on a polymer membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103764338A true CN103764338A (en) | 2014-04-30 |
| CN103764338B CN103764338B (en) | 2016-09-14 |
Family
ID=47021156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280026523.2A Active CN103764338B (en) | 2011-04-25 | 2012-04-25 | A kind of single-pulse laser ablation of the metal film on membrane for polymer |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8593727B2 (en) |
| EP (1) | EP2701877B1 (en) |
| CN (1) | CN103764338B (en) |
| WO (1) | WO2012149070A2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106987855A (en) * | 2016-01-05 | 2017-07-28 | 蒂森克虏拉塞斯坦有限公司 | The method for removing the coating that the organic material adhered on tin plate surface is constituted |
| CN111893453A (en) * | 2020-07-21 | 2020-11-06 | 四川大学 | Method for preparing fine metal coating pattern on inner wall of pointed conical ceramic cavity |
| CN111945115A (en) * | 2019-05-17 | 2020-11-17 | 常州星宇车灯股份有限公司 | Method for processing surface film of car lamp part |
| CN112382735A (en) * | 2020-11-17 | 2021-02-19 | 东莞赣锋电子有限公司 | Method for preparing lithium ion battery pole piece by laser cleaning |
| CN112946807A (en) * | 2021-01-29 | 2021-06-11 | 武汉华星光电技术有限公司 | Polarizer, manufacturing method thereof and display device |
| CN117697166A (en) * | 2024-02-06 | 2024-03-15 | 中国工程物理研究院激光聚变研究中心 | Method for etching organic film on surface of metal film by utilizing laser |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201016046D0 (en) * | 2010-09-24 | 2010-11-10 | Renishaw Plc | A method of forming an optical device |
| US8842358B2 (en) | 2012-08-01 | 2014-09-23 | Gentex Corporation | Apparatus, method, and process with laser induced channel edge |
| US9174308B2 (en) * | 2012-08-30 | 2015-11-03 | Preco, Inc. | Laser scoring of metal/polymer structures |
| PL2917782T3 (en) * | 2012-11-08 | 2020-05-18 | Saint-Gobain Glass France | Multi-layer film with electrically switchable optical properties |
| US20140144593A1 (en) * | 2012-11-28 | 2014-05-29 | International Business Machiness Corporation | Wafer debonding using long-wavelength infrared radiation ablation |
| US9586291B2 (en) | 2012-11-28 | 2017-03-07 | Globalfoundries Inc | Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release |
| US9653298B2 (en) * | 2013-01-14 | 2017-05-16 | Ipg Photonics Corporation | Thermal processing by transmission of mid infra-red laser light through semiconductor substrate |
| JP6208430B2 (en) * | 2013-01-25 | 2017-10-04 | 株式会社ディスコ | Laser processing method |
| TWI576190B (en) | 2013-08-01 | 2017-04-01 | Ibm | Wafer debonding using mid-wavelength infrared radiation ablation |
| EP2884553A1 (en) * | 2013-12-11 | 2015-06-17 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method and system for providing a carrier with an embedded patterned metal structure |
| WO2017006233A1 (en) * | 2015-07-06 | 2017-01-12 | King Abdullah University Of Science And Technology | Selective laser etching or ablation for fabrication of devices |
| CN107030397A (en) * | 2017-05-19 | 2017-08-11 | 东莞市盛雄激光设备有限公司 | The cutter device and cutting method of a kind of composite substrate |
| US10784210B2 (en) | 2018-12-27 | 2020-09-22 | STATS ChipPAC Pte. Ltd. | Semiconductor device with partial EMI shielding removal using laser ablation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376314A (en) * | 1993-04-29 | 1994-12-27 | Illinois Tool Works Inc. | Method of making a laser ablated formed cap |
| US5589085A (en) * | 1995-08-04 | 1996-12-31 | Meeco, Incorporated | Process of manufacturing a detecting unit for an electrolytic cell with thin film electrodes |
| US20040152067A1 (en) * | 2002-07-20 | 2004-08-05 | Xiaobo Wang | Impedance based apparatuses and methods for analyzing cells and particles |
| CN101241963A (en) * | 2007-12-12 | 2008-08-13 | 厦门三安电子有限公司 | A film LED chip part based on compound low-resistance buffer structure and its making method |
| JP2009220367A (en) * | 2008-03-14 | 2009-10-01 | Omron Corp | Manufacturing method of resin film |
| CN102084275A (en) * | 2008-07-10 | 2011-06-01 | 旭硝子株式会社 | Wire grid type polarizer, and method for manufacturing the polarizer |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3720784A (en) | 1971-02-12 | 1973-03-13 | Bell Telephone Labor Inc | Recording and display method and apparatus |
| US4000492A (en) | 1974-04-04 | 1976-12-28 | Bell Telephone Laboratories, Incorporated | Metal film recording media for laser writing |
| JPS61187377A (en) * | 1985-02-15 | 1986-08-21 | Teijin Ltd | Dividing method for processing of amorphous solar battery |
| US4752455A (en) | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
| US5104480A (en) | 1990-10-12 | 1992-04-14 | General Electric Company | Direct patterning of metals over a thermally inefficient surface using a laser |
| US5093279A (en) | 1991-02-01 | 1992-03-03 | International Business Machines Corporation | Laser ablation damascene process |
| US5265114C1 (en) | 1992-09-10 | 2001-08-21 | Electro Scient Ind Inc | System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device |
| US7649153B2 (en) * | 1998-12-11 | 2010-01-19 | International Business Machines Corporation | Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam |
| US6333485B1 (en) * | 1998-12-11 | 2001-12-25 | International Business Machines Corporation | Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam |
| US6203952B1 (en) * | 1999-01-14 | 2001-03-20 | 3M Innovative Properties Company | Imaged article on polymeric substrate |
| US6936311B2 (en) * | 1999-01-27 | 2005-08-30 | The United States Of America As Represented By The Secretary Of The Navy | Generation of biomaterial microarrays by laser transfer |
| US6036809A (en) | 1999-02-16 | 2000-03-14 | International Business Machines Corporation | Process for releasing a thin-film structure from a substrate |
| US6531679B2 (en) | 2000-09-29 | 2003-03-11 | Siemens Aktiengesellschaft | Method for the laser machining of organic materials |
| US6835426B2 (en) * | 2001-01-19 | 2004-12-28 | Potomac Photonics, Inc. | Method and apparatus for pulse-position synchronization in miniature structures manufacturing processes |
| US6833222B1 (en) * | 2001-03-29 | 2004-12-21 | Dupont Photomasks, Inc. | Method and apparatus for trimming a pellicle film using a laser |
| JP4465429B2 (en) | 2002-02-21 | 2010-05-19 | 株式会社リコー | Laser processing method |
| US6876784B2 (en) * | 2002-05-30 | 2005-04-05 | Nanoopto Corporation | Optical polarization beam combiner/splitter |
| JP4386413B2 (en) | 2003-08-25 | 2009-12-16 | 株式会社エンプラス | Manufacturing method of wire grid polarizer |
| US7332263B2 (en) | 2004-04-22 | 2008-02-19 | Hewlett-Packard Development Company, L.P. | Method for patterning an organic light emitting diode device |
| KR100632510B1 (en) | 2004-04-30 | 2006-10-09 | 엘지전자 주식회사 | Wire grid polarizer and its manufacturing method |
| US7176053B1 (en) | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
| JP2007152420A (en) * | 2005-12-08 | 2007-06-21 | Aisin Seiki Co Ltd | Method of removing film on substrate |
| EP2023169A4 (en) * | 2006-04-07 | 2011-03-16 | Asahi Glass Co Ltd | Wire grid polarizer and method for producing the same |
| TWI412079B (en) * | 2006-07-28 | 2013-10-11 | Semiconductor Energy Lab | Method for manufacturing display device |
| US8148259B2 (en) * | 2006-08-30 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20080083706A1 (en) * | 2006-10-05 | 2008-04-10 | Mu-Gahat Enterprises, Llc | Reverse side film laser circuit etching |
| JP4795214B2 (en) | 2006-12-07 | 2011-10-19 | チェイル インダストリーズ インコーポレイテッド | Wire grid polarizer and manufacturing method thereof |
| US8382943B2 (en) * | 2009-10-23 | 2013-02-26 | William George Clark | Method and apparatus for the selective separation of two layers of material using an ultrashort pulse source of electromagnetic radiation |
-
2011
- 2011-04-25 US US13/093,683 patent/US8593727B2/en active Active
-
2012
- 2012-04-25 WO PCT/US2012/035067 patent/WO2012149070A2/en active Application Filing
- 2012-04-25 EP EP12777297.8A patent/EP2701877B1/en active Active
- 2012-04-25 CN CN201280026523.2A patent/CN103764338B/en active Active
-
2013
- 2013-11-22 US US14/086,986 patent/US20140218796A1/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376314A (en) * | 1993-04-29 | 1994-12-27 | Illinois Tool Works Inc. | Method of making a laser ablated formed cap |
| US5589085A (en) * | 1995-08-04 | 1996-12-31 | Meeco, Incorporated | Process of manufacturing a detecting unit for an electrolytic cell with thin film electrodes |
| US20040152067A1 (en) * | 2002-07-20 | 2004-08-05 | Xiaobo Wang | Impedance based apparatuses and methods for analyzing cells and particles |
| CN101241963A (en) * | 2007-12-12 | 2008-08-13 | 厦门三安电子有限公司 | A film LED chip part based on compound low-resistance buffer structure and its making method |
| JP2009220367A (en) * | 2008-03-14 | 2009-10-01 | Omron Corp | Manufacturing method of resin film |
| CN102084275A (en) * | 2008-07-10 | 2011-06-01 | 旭硝子株式会社 | Wire grid type polarizer, and method for manufacturing the polarizer |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106987855A (en) * | 2016-01-05 | 2017-07-28 | 蒂森克虏拉塞斯坦有限公司 | The method for removing the coating that the organic material adhered on tin plate surface is constituted |
| CN106987855B (en) * | 2016-01-05 | 2020-12-15 | 蒂森克虏拉塞斯坦有限公司 | Method for removing coating formed by organic material attached to surface of tin-plated steel plate |
| CN111945115A (en) * | 2019-05-17 | 2020-11-17 | 常州星宇车灯股份有限公司 | Method for processing surface film of car lamp part |
| CN111893453A (en) * | 2020-07-21 | 2020-11-06 | 四川大学 | Method for preparing fine metal coating pattern on inner wall of pointed conical ceramic cavity |
| CN112382735A (en) * | 2020-11-17 | 2021-02-19 | 东莞赣锋电子有限公司 | Method for preparing lithium ion battery pole piece by laser cleaning |
| CN112382735B (en) * | 2020-11-17 | 2021-11-12 | 东莞赣锋电子有限公司 | Method for preparing lithium ion battery pole piece by laser cleaning |
| CN112946807A (en) * | 2021-01-29 | 2021-06-11 | 武汉华星光电技术有限公司 | Polarizer, manufacturing method thereof and display device |
| CN112946807B (en) * | 2021-01-29 | 2022-09-27 | 武汉华星光电技术有限公司 | Polarizer, manufacturing method thereof and display device |
| CN117697166A (en) * | 2024-02-06 | 2024-03-15 | 中国工程物理研究院激光聚变研究中心 | Method for etching organic film on surface of metal film by utilizing laser |
| CN117697166B (en) * | 2024-02-06 | 2024-04-19 | 中国工程物理研究院激光聚变研究中心 | Method for etching organic film on surface of metal film by utilizing laser |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2701877B1 (en) | 2023-11-08 |
| WO2012149070A2 (en) | 2012-11-01 |
| EP2701877A2 (en) | 2014-03-05 |
| CN103764338B (en) | 2016-09-14 |
| EP2701877A4 (en) | 2016-11-23 |
| US8593727B2 (en) | 2013-11-26 |
| US20120268817A1 (en) | 2012-10-25 |
| WO2012149070A3 (en) | 2013-03-14 |
| US20140218796A1 (en) | 2014-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103764338A (en) | Single-shot laser ablation of a metal film on a polymer membrane | |
| EP1162519B1 (en) | Production method and device for hologram | |
| TWI819817B (en) | Laser processing apparatus, methods of laser-processing workpieces and related arrangements | |
| US7718554B2 (en) | Focused laser beam processing | |
| TWI462181B (en) | Flash lamp annealing crystallization for large area thin films | |
| TW465114B (en) | Apparatus for producing a semiconductor thin film | |
| US5243589A (en) | Method for recording information in an optically readable data memory | |
| JP6526855B2 (en) | Apparatus and method for reducing particles in an advanced annealing process | |
| JPH04268070A (en) | Method for forming metal layer on substrate | |
| US8804096B2 (en) | Apparatus for and method of wafer edge exposure | |
| US20140057460A1 (en) | Methods of thermally processing a substrate | |
| US10882136B2 (en) | Method and apparatus for forming a conductive track | |
| US9472505B2 (en) | Die or substrate marking using a laser | |
| CN110908264A (en) | Method for directly writing holographic anti-counterfeiting pattern by using ultrashort pulse laser | |
| JPH097935A (en) | Resist exposure method | |
| JP2010145562A (en) | Pattern formation method | |
| CN111684356A (en) | Method and apparatus for cleaning substrate and computer program product | |
| EP4366907A1 (en) | Method for optical writing in a semiconductor material, corresponding computer program product, storing medium and writing device | |
| Ihlemann | Ultraviolet laser ablation patterning of oxide films for optical applications | |
| GR1009936B (en) | Method of fabricating polarizings optical elements comprising laser induced self-organized periodic structures | |
| JP2010171308A (en) | Wiring forming method | |
| JP2010177397A (en) | Method of forming pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |