CN103606617B - There is the inverted light-emitting diode (LED) of transparency electrode - Google Patents
There is the inverted light-emitting diode (LED) of transparency electrode Download PDFInfo
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- CN103606617B CN103606617B CN201310554175.2A CN201310554175A CN103606617B CN 103606617 B CN103606617 B CN 103606617B CN 201310554175 A CN201310554175 A CN 201310554175A CN 103606617 B CN103606617 B CN 103606617B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 description 4
- 238000013517 stratification Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of inverted light-emitting diode (LED) with transparency electrode, including: bearing substrate (1)；P-type reflecting electrode (2) on bearing substrate (1)；P-type semiconductor layer (4) on p-type reflecting electrode (2)；Active layer (5) in p-type semiconductor layer (4)；N-type semiconductor layer (6) on active layer (5)；And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).The light emitting diode with transparency electrode that the method that the present invention proposes prepares can improve integrated level, Simplified flowsheet, it is not necessary to pin configuration, thus reducing manufacturing cost, and can improve light extraction efficiency, thus promoting whole lighting efficiency.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly to a kind of inverted light-emitting diode (LED) with transparency electrode.
Background technology
The advantage of semiconductor light-emitting-diode is in that luminous intensity is high, light directivity is strong, energy consumption is low, cheap for manufacturing cost etc., therefore its application is increasingly extensive, particularly has the trend of replacement electric filament lamp and fluorescent lamp in illumination.The advantage of upside-down mounting (flip-chip) formula light emitting diode is that heat dissipation characteristics is excellent and luminous efficiency is higher.And in recent years, in order to improve the brightness of light emitting diode, develop the light emitting diode of vertical stratification, relative to positive assembling structure, i.e. the light emitting diode of platform (mesa) structure, the light emitting diode of vertical stratification has plurality of advantages.Two electrodes of light emitting diode with vertical structure are respectively at the both sides of light emitting diode, and electric current almost all flows vertically through semiconductor epitaxial layers, it does not have the electric current of horizontal mobility, therefore homogeneous current distribution, the heat of generation is relatively fewer.And owing to two electrodes of vertical stratification are in both sides, therefore going out the stop that will not be subject to same lateral electrode in photoreduction process, its light extraction efficiency is higher.
But the light emitting diode of above-mentioned vertical stratification there is problems of, two electrodes are respectively at the both sides of light emitting diode, cause that integrated level is low, complex process, and also need to pin configuration.
Summary of the invention
In view of this, the present invention is directed to problem of the prior art, it is proposed that a kind of inverted light-emitting diode (LED) with transparency electrode.By the structure of the n-type electrode of this light emitting diode and p-type electrode and setting are improved, it is possible to increase integrated level, Simplified flowsheet, it is not necessary to pin configuration, thus reducing manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promoting whole lighting efficiency.
The inverted light-emitting diode (LED) with transparency electrode that the present invention proposes includes:
Bearing substrate (1)；
P-type reflecting electrode (2) on bearing substrate (1)；
P-type semiconductor layer (4) on p-type reflecting electrode (2)；
Active layer (5) in p-type semiconductor layer (4)；
N-type semiconductor layer (6) on active layer (5)；And
Transparent electrode layer (7) in n-type semiconductor layer (6),
Wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).
Wherein part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are by etching the ledge structure to form exposed portion active layer (5), have transparent insulating layer (3) in ledge structure；
Wherein the thickness of transparent insulating layer (3) is the thickness sum of p-type reflecting electrode (2) and p-type semiconductor layer (4), and this transparent insulating layer (3), active layer (5) and n-type semiconductor layer (6) flush with the side of transparent electrode layer (7) respectively, so that transparent insulating layer (3) is clamped between p-type reflecting electrode (2) and the p-type semiconductor layer (4) on the transparent electrode layer (7) of side and bearing substrate (1) that cover inverted light-emitting diode (LED), so that transparent electrode layer (7) is insulated from each other with p-type reflecting electrode (2) and p-type semiconductor layer (4), and transparent insulating layer (3) is Al2O3。
Wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO2In the laminated film of a kind of or above-mentioned material.
Accompanying drawing explanation
Fig. 1 is the sectional view of the inverted light-emitting diode (LED) with transparency electrode of the present invention；
Fig. 2 is the sectional view in the manufacture of the inverted light-emitting diode (LED) with transparency electrode of the present invention；
Fig. 3 is the top view of the inverted light-emitting diode (LED) with transparency electrode in the manufacture of Fig. 2.
Detailed description of the invention
The inverted light-emitting diode (LED) with transparency electrode and the manufacture method thereof of the present invention is described in detail below with reference to Fig. 1-3.For clarity sake, the equal not drawn on scale of each structure shown in accompanying drawing, and the present invention is not limited to structure shown in figure.
With reference first to Fig. 1, the inverted light-emitting diode (LED) with transparency electrode includes bearing substrate (1)；P-type reflecting electrode (2) on bearing substrate (1)；P-type semiconductor layer (4) on p-type reflecting electrode (2)；Active layer (5) in p-type semiconductor layer (4)；N-type semiconductor layer (6) on active layer (5)；And the transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED).
Bearing substrate (1) can be the metal material with highly reflective, for instance the combination of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.
P-type reflecting electrode (2) is the metal material with highly reflective, for instance the multi-layered electrode combined of Al, Au, Ag, Pt, Ni, Cu, Ti or above-mentioned metal material.
The material of p-type semiconductor layer (4), active layer (5) and n-type semiconductor layer (6) is such as III-V race's semi-conducting material, for instance GaN, AlN, InGaN, AlGaN etc..
Transparent electrode layer (7) is transparent conductive oxide (TCO), can be specifically tin indium oxide (ITO), ZnO, AZO, ATO, FTO, SnO2Deng in the laminated film of one or more or above-mentioned material.
And as indicated in figs. 1 and 3, p-type reflecting electrode (2) and p-type semiconductor layer (4) area in a top view are less than the area of active layer (5) and n-type semiconductor layer (6), namely part of p-type reflecting electrode (2) and p-type semiconductor layer (4) is etched away by etching, thus exposed portion active layer (5), thus forming ledge structure, and in ledge structure, fill transparent insulating layer (3), for instance Al2O3.And transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED), referring specifically to Fig. 3, transparent electrode layer (7) covers the end face of inverted light-emitting diode (LED), namely cover whole n-type semiconductor layer (6), and cover the side of whole inverted light-emitting diode (LED), namely cover four sides of inverted light-emitting diode (LED).And transparent electrode layer (7) is as the n-electrode of inverted light-emitting diode (LED), and so that be used as between transparent electrode layer (7) and the p-type reflecting electrode (2) of the n-electrode of inverted light-emitting diode (LED) insulated from each other, to prevent short circuit, between transparent electrode layer (7) and the p-type reflecting electrode (2) of four sides of inverted light-emitting diode (LED), there is above-mentioned transparent insulating layer (3) covering.
The manufacture method of the inverted light-emitting diode (LED) with transparency electrode of the following description present invention.With specific reference to Fig. 1-2.
(1) provide growth substrates, sequentially form n-type semiconductor layer (6), active layer (5), p-type semiconductor layer (4) and p-type reflecting electrode (2) thereon；
(2) part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are etched with exposed portion active layer (5), thus forming ledge structure；
(3) transparent insulation material is filled into ledge structure, thus forming transparent insulating layer (3)；
(4) resulting structures is inverted, is disposed on bearing substrate (1), and peels off growth substrates, thus exposing n-type semiconductor layer (6)；
(5) in the n-type semiconductor layer (6) exposed, transparent electrode layer (7) is formed；
(6) groove (8) is formed, it penetrates transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), and groove (8) has medial wall (8b) and lateral wall (8a)；
(7) in groove (8), the transparent conductive material for transparent electrode layer (7) is filled, for instance ITO, ZnO, AZO, ATO, FTO, SnO2Deng in the laminated film of one or more or above-mentioned material；
(8) utilize lateral wall (8a) as cut-boundary, inverted light-emitting diode (LED) is cut, thus removing partially transparent electrode layer (7), n-type semiconductor layer (6), active layer (5), transparent insulating layer (3), thus all defining transparent electrode layer (7) on four sides and end face of whole inverted light-emitting diode (LED), it is consequently formed the inverted light-emitting diode (LED) with transparency electrode of the present invention.
So far, foregoing description has specifically understood the inverted light-emitting diode (LED) with transparency electrode and the manufacture method thereof of the present invention, relative to the light emitting diode that existing method prepares, the light emitting diode that the method that the present invention proposes prepares can improve integrated level, Simplified flowsheet, without pin configuration, thus reducing manufacturing cost.And the inverted light-emitting diode (LED) with transparency electrode of the present invention can improve light extraction efficiency, thus promoting whole lighting efficiency.Embodiment described above is only merely the preferred embodiments of the present invention, and it is not intended to limit the present invention.The present invention without departing from the spirit of the invention, can made any amendment, and protection scope of the present invention is being limited to the appended claims by those skilled in the art.
Claims (2)
1. there is an inverted light-emitting diode (LED) for transparency electrode, including:
Bearing substrate (1)；
P-type reflecting electrode (2) on bearing substrate (1)；
P-type semiconductor layer (4) on p-type reflecting electrode (2)；
Active layer (5) in p-type semiconductor layer (4)；
N-type semiconductor layer (6) on active layer (5)；And
Transparent electrode layer (7) in n-type semiconductor layer (6), wherein transparent electrode layer (7) covers end face and the side of whole inverted light-emitting diode (LED)；
Wherein part of p-type semiconductor layer (4) and p-type reflecting electrode (2) are by etching the ledge structure to form exposed portion active layer (5), have transparent insulating layer (3) in ledge structure；
Wherein the thickness of transparent insulating layer (3) is the thickness sum of p-type reflecting electrode (2) and p-type semiconductor layer (4), and this transparent insulating layer (3), active layer (5) and n-type semiconductor layer (6) flush with the side of transparent electrode layer (7) respectively, so that transparent insulating layer (3) is clamped between p-type reflecting electrode (2) and the p-type semiconductor layer (4) on the transparent electrode layer (7) of side and bearing substrate (1) that cover inverted light-emitting diode (LED), so that transparent electrode layer (7) is insulated from each other with p-type reflecting electrode (2) and p-type semiconductor layer (4), and transparent insulating layer (3) is Al2O3。
2. inverted light-emitting diode (LED) according to claim 1, wherein transparent electrode layer (7) is ITO, ZnO, AZO, ATO, FTO, SnO2In the laminated film of a kind of or above-mentioned material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554175.2A CN103606617B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of transparency electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310554175.2A CN103606617B (en) | 2013-11-08 | 2013-11-08 | There is the inverted light-emitting diode (LED) of transparency electrode |
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| Publication Number | Publication Date |
|---|---|
| CN103606617A CN103606617A (en) | 2014-02-26 |
| CN103606617B true CN103606617B (en) | 2016-06-29 |
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| FR3042913B1 (en) * | 2015-10-22 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | MICROELECTRONIC DIODE WITH OPTIMIZED ACTIVE SURFACE |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163673A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN102187483A (en) * | 2009-02-19 | 2011-09-14 | Lg伊诺特有限公司 | Led and led package |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102187483A (en) * | 2009-02-19 | 2011-09-14 | Lg伊诺特有限公司 | Led and led package |
| CN102163673A (en) * | 2010-02-18 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
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| CN103606617A (en) | 2014-02-26 |
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Effective date of registration: 20170726 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG JIANGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |