CN103074606A - Graphite plate, reaction chamber with graphite plate, and substrate heating method - Google Patents

Graphite plate, reaction chamber with graphite plate, and substrate heating method Download PDF

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Publication number
CN103074606A
CN103074606A CN2012100412036A CN201210041203A CN103074606A CN 103074606 A CN103074606 A CN 103074606A CN 2012100412036 A CN2012100412036 A CN 2012100412036A CN 201210041203 A CN201210041203 A CN 201210041203A CN 103074606 A CN103074606 A CN 103074606A
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China
Prior art keywords
substrate
graphite plate
support frame
groove
graphite
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CN2012100412036A
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Chinese (zh)
Inventor
梁秉文
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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Priority to CN2012100412036A priority Critical patent/CN103074606A/en
Priority to PCT/CN2013/071446 priority patent/WO2013123859A1/en
Priority to TW102105167A priority patent/TW201335414A/en
Publication of CN103074606A publication Critical patent/CN103074606A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The embodiment of the invention provides a graphite plate, a reaction chamber with the graphite plate, and a substrate heating method used in a chemical vapor deposition process. The graphite plate comprises a recess. A corresponding supporting frame is arranged at the position of the recess. The supporting frame is used for suspending a substrate, such that the substrate does not contact the graphite plate. According to the invention, the substrate is suspended, such that heat radiation is the main heating form of the heating of the graphite plate upon the substrate. Therefore, heating uniformity upon the substrate and especially a warped and deformed substrate is improved, and chemical vapor deposition process uniformity is improved.

Description

Graphite plate, has the reaction chamber of above-mentioned graphite plate and to the heating means of substrate
Technical field
The present invention relates to chemical vapour deposition (CVD) technical field, particularly the graphite plate of chemical vapor depsotition equipment, reaction chamber and to the heating means of substrate.
Background technology
MOCVD (Metal-Organic Chemical Vapor Deposition) is a kind of chemical gas phase epitaxial deposition process that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the source material as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, carry out depositing operation in the pyrolysis mode at graphite plate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.
The below describes the principle of existing chemical vapor deposition method.Particularly, take MOCVD as example, please refer to the structural representation of existing chemical vapor deposition method equipment shown in Figure 1.
Be formed with the spray header 11 and the graphite plate 12 that are oppositely arranged in the glove box 10.Described spray header 11 is interior can to arrange a plurality of apertures, and described spray header 11 is used for providing reactant gases.Have a plurality of grooves in the described graphite plate 12, the corresponding a slice substrate 121 of placing in each groove, the material of described substrate 121 is generally expensive sapphire.The below of described graphite plate 12 also is formed with heating unit 13, and 13 pairs of graphite plates 12 of described heating unit heat, and graphite plate 12 intensification of being heated can be heated substrate 121 with thermal radiation and heat exchange pattern.Because substrate 121 is placed in the graphite plate 12, both contacts, so the heating of 12 pairs of substrates 121 of graphite plate is take thermal conduction as main.
When carrying out MOCVD technique, reactant gases enters the conversion zone (position on the surface of close substrate 121) of graphite plate 12 tops from the aperture of spray header 11, described substrate 121 is owing to the thermal conduction heating of heating unit 13 has certain temperature, thereby this temperature is so that carry out chemical reaction between the reactant gases, thereby at substrate 121 surface deposition epitaxial material layers.
Find that in practice the homogeneity of existing chemical vapor deposition method is not high, the yield of extension chip is on the low side.
Summary of the invention
The problem that the embodiment of the invention solves provided a kind of graphite plate, contain the reaction chamber of above-mentioned graphite plate and to the heating means of substrate, improved the homogeneity to the heating of substrate (substrate of distortion has especially occured), improve the homogeneity of chemical vapor deposition method, improved the yield of extension chip.
In order to address the above problem, the invention provides a kind of graphite plate of chemical vapor deposition method, have groove, the position at described groove place has corresponding with it bracing frame, and support frame as described above is used for substrate is suspended, so that substrate does not contact with graphite plate.
Alternatively, support frame as described above be shaped as annular, support frame as described above is around one week of bottom of described groove, support frame as described above is positioned at the below of substrate.
Alternatively, the sidewall of described groove and bottom consist of V-type.
Alternatively, support frame as described above and the thickness sum of the substrate of wherein placing equal the degree of depth of described groove.
Alternatively, support frame as described above hangs on the graphite plate of described groove both sides, and the top of support frame as described above is fixed on the graphite plate of both sides of described groove, and the bottom of support frame as described above is used for placing substrate.
Alternatively, support frame as described above is shaped as Z-type or notch cuttype.
Alternatively, the front of the front of support frame as described above, substrate flushes with the front of graphite plate.
Alternatively, have hole in the described graphite plate, be arranged in the corresponding graphite plate in edge of substrate, described hole is used for reducing graphite plate to the thermal radiation at the edge of substrate.
Alternatively, the material of support frame as described above is transparent material or adiabatic material.
Alternatively, described transparent material is a kind of or its mixing in quartz, the sapphire.
Alternatively, described adiabatic material is pottery, zirconium white or both mixing.
Alternatively, be formed with a plurality of holes on support frame as described above and surface substrate contact, be used for reducing the contact area of support frame as described above and substrate.
Alternatively, the part that is used for the placement substrate of support frame as described above is double-doughnut structure or a plurality of pillar stiffener.
Alternatively, the depth range of described groove is 300 microns~2 millimeters, and the altitude range of support frame as described above is 290 microns~1.7 millimeters.
The present invention also provides in a kind of chemical vapor deposition method process the heating means of substrate, utilizes the bracing frame corresponding with groove, and described substrate is suspended, so that described substrate does not contact with graphite plate, utilizes the thermal radiation of graphite plate that described substrate is heated.
Correspondingly, the present invention also provides a kind of reaction chamber of chemical vapor depsotition equipment, comprises described graphite plate.
Compared with prior art, the present invention has the following advantages:
The groove of the graphite plate that the embodiment of the invention provides has corresponding with it bracing frame, utilize this bracing frame that substrate is suspended, so that substrate does not contact with graphite plate, when carrying out chemical vapor deposition method, (graphite plate heats up under the heating of heating unit graphite plate as the thermal source of substrate, can provide heat with thermal radiation and heat exchange pattern), because substrate does not contact with graphite plate, therefore utilize graphite plate of the present invention can realize that heating to substrate is in the thermal radiation mode as main, and prior art directly is placed on substrate in the groove of graphite plate (being that substrate directly contacts with graphite plate), therefore prior art to the heating of substrate take thermal conduction as main, when substrate generation buckling deformation, it is inhomogeneous that prior art causes the each point of substrate to be heated easily, cause the epitaxial material layer that forms on the substrate inhomogeneous, because the present invention utilizes the thermal radiation mode to heat, having eliminated prior art utilizes thermal conduction to heat the inhomogeneous impact that causes to the heating of each point on the substrate, improved the homogeneity to substrate heating, the homogeneity of the epitaxial material layer that forms on the corresponding homogeneity of having improved chemical vapor deposition method and the substrate;
Further optimally, the front of support frame as described above, the front of substrate flush with the front of graphite plate, can avoid the distribution of the air-flow in the graphite plate of substrate both sides and the front that bracing frame affects substrate, further improve the homogeneity of the air-flow distribution of substrate face;
Further optimally, has hole in the described graphite plate, be arranged in the graphite plate corresponding with the edge of described substrate, described hole is used for reducing graphite plate to the thermal radiation at the edge of substrate, so that the middle part of the edge of substrate and substrate is subject to is thermal-radiating basic identical, thereby further improve the homogeneity that substrate is heated;
Further optimally, be formed with a plurality of holes on support frame as described above and surface substrate contact, be used for reducing the contact area of support frame as described above and substrate, reduced the thermal conduction from graphite plate, further improved the homogeneity that substrate is heated;
Further optimally, support frame as described above hangs on the graphite plate of described groove both sides, the top of support frame as described above is fixed on the graphite plate of both sides of described groove, the bottom of support frame as described above is used for placing substrate, support frame as described above be shaped as the Z-type annulus, when substrate need to rotate together along with graphite plate, be conducive to guarantee that the position of substrate in graphite plate is relatively stable.
Description of drawings
Fig. 1 is the structural representation of the MOCVD device of prior art;
Fig. 2 is the Sapphire Substrate of buckling deformation and the structural representation of graphite plate;
Fig. 3 is the silicon substrate of buckling deformation and the structural representation of graphite plate;
Fig. 4 is the structural representation of the graphite plate of first embodiment of the invention;
Fig. 5 is the plan structure synoptic diagram of graphite plate shown in Figure 4;
Fig. 6 is the structural representation of the graphite plate of second embodiment of the invention;
Fig. 7 is the structural representation of the graphite plate of third embodiment of the invention;
Fig. 8 is the structural representation of the graphite plate of fourth embodiment of the invention;
Fig. 9 is the structural representation of the graphite plate of fifth embodiment of the invention;
Figure 10 is the structural representation of the graphite plate of sixth embodiment of the invention;
Figure 11 is the bottom construction synoptic diagram of the bracing frame among Fig. 9;
Figure 12 is the structural representation of the graphite plate of seventh embodiment of the invention;
Figure 13 is the structural representation of the graphite plate of eighth embodiment of the invention;
Figure 14 is the structural representation of the graphite plate of ninth embodiment of the invention;
Figure 15 is the silicon substrate temperature distribution history of buckling deformation.
Embodiment
The homogeneity of the chemical vapor deposition method of prior art is not high, and the yield of extension chip is on the low side.Study discovery through the contriver, inhomogeneous (each point of substrate has the temperature difference) causes the epitaxial material layer that forms at substrate after the chemical vapor deposition method inhomogeneous because substrate is heated.Cause substrate one of the inhomogeneous reason of being heated to be exactly, substrate in the chemical vapor deposition method process because buckling deformation has occured in stress.Usually substrate is positioned in the graphite plate, both contacts, and graphite plate can heat substrate with thermal conduction and thermal radiation dual mode.After substrate warpage distortion, substrate is former should be different with the distance between the graphite plate from the each point of graphite plate contact, so that substrate is heated is inhomogeneous.And the contriver finds that also based on different materials, the trend of the buckling deformation that substrate occurs is different under the effect of stress.Although the trend of the substrate generation buckling deformation of unlike material is different, it is inhomogeneous all can to cause substrate to be heated.
Particularly, please refer to the Sapphire Substrate of buckling deformation shown in Figure 2 and the structural representation of graphite plate.Have groove in the graphite plate 12, graphite plate 12 just facing to spray header (not shown), be placed with substrate 121 in the groove of graphite plate 12, described substrate 121 just facing to spray header.The material of described substrate 121 is sapphire, because stress, the back side of substrate 121 (with the surface of vis-a-vis) originally is positioned at conplane 3 A points, B point, C point and has formed circular-arc (opening upwards of circular arc), and whole substrate 121 is bowl-shape on the rim of a bowl in groove.Directly contact with graphite plate 12 with the C point for the A point, therefore A point and C point can be with thermal radiation and the acceptance of the thermal conduction dual mode heats from graphite plate 12, and can transmit the part heat to the B point gradually, and the B point is suspended in graphite plate 12 tops, can only accept heat from graphite plate 12 in the thermal radiation mode, this is so that the each point of substrate 121 is heated inhomogeneously, and the temperature of substrate 121 reduces to the center from the edge.
Be the substrate of silicon for material, its buckling deformation is opposite with Sapphire Substrate.Please refer to the silicon substrate of buckling deformation shown in Figure 3 and the structural representation of graphite plate, the structure identical with Fig. 2 adopts identical label to represent.Substrate 121 faces up and is positioned in the graphite plate 12, its material is silicon, because stress, the back side of described substrate 121 originally is positioned at conplane 3 A points, B point and C point and has formed circular-arc (Open Side Down for circular arc), but the opening direction of this circular arc is opposite with the opening direction of the circular arc at the back side of Sapphire Substrate, and whole substrate 121 is the bowl-shape of the rim of a bowl downward (back-off).The C point at substrate 121 back sides is owing to directly contact with graphite plate 12, it can be simultaneously receives heat from graphite plate 12 with thermal conduction and thermal radiation dual mode, and the C heat of naming a person for a particular job transmits to the middle part of substrate 121, and can only accept heat from graphite plate 12 in thermal-radiating mode for B point and A point, this is so that the lip temperature of substrate 121 is high, the middle part temperature is low, and for the described distortion of Fig. 3 occurs, the heat conducting heat that the heat conducting heat that the substrate middle part is accepted is accepted than the middle part of the substrate among Fig. 2 is little, has more aggravated the inhomogeneous of substrate 121 temperature distribution.
And no matter be Sapphire Substrate or silicon substrate, because " fringing effect " to the substrate heating (is that the heat-up rate of edges of substrate is greater than the heat-up rate at substrate middle part, so that the temperature of edges of substrate is higher than the temperature at substrate middle part) impact, heating generally has the inhomogeneous problem of being heated so that existing method is to substrate for this.And as previously mentioned, silicon substrate is because its buckling deformation is that Open Side Down, and the problem of the non-uniform temperature at its edge and middle part is even more serious.But utilizing silicon to make the extension chip as the substrate of chemical vapor deposition method is the technology trends that led chip is made the field, and the buckling deformation problem of silicon substrate does not temporarily have effective terms of settlement.How in the situation of substrate (especially silicon substrate) generation buckling deformation it to be realized comparatively uniformly heating, be the technical problem to be solved in the present invention.
In order to address the above problem, the present invention proposes a kind of to the new heating means to substrate, and the described method utilization bracing frame corresponding with groove suspends described substrate, so that described substrate does not contact with graphite plate, utilize the thermal radiation of graphite plate that described substrate is heated.Described method is applicable to MOCVD technique, certainly, also is applicable to can affect with the thermal radiation heating after other the substrate temperature distortion chemical vapor deposition method of process uniformity.
The present invention is by changing the type of heating to substrate, the mode that (for main type of heating) and thermal radiation are heated substrate jointly so that existing thermal conduction changes into to adopt substrate to be heated or be heated to be to lead with thermal radiation with thermal radiation substrate is heated, and has improved the homogeneity that the each point of substrate is heated.In the situation of substrate generation buckling deformation, although the distance of the graphite plate of substrate each point and below is variant, but above-mentioned difference is less on the impact of thermal radiation heating, therefore, adopts the method for the embodiment of the invention can realize the substrate of buckling deformation is realized comparatively uniformly heating.
Take MOCVD equipment as example, usually be provided with groove in the graphite plate of existing MOCVD equipment, substrate is positioned in the groove, the present invention can be by arranging bracing frame in the groove or on the graphite plate of groove both sides, substrate is suspended on the graphite plate, thereby so that described substrate does not contact with graphite plate, utilize the thermal radiation of graphite plate that described substrate is heated.
Below in conjunction with embodiment technical scheme of the present invention is described in detail.For technical scheme of the present invention is described better, please in conjunction with the structural representation of the graphite plate of first embodiment of the invention shown in Figure 4.As an embodiment, facing up of graphite plate 20 has groove in the graphite plate 20, and described groove has sidewall and bottom.The sidewall of described groove be groove along the both sides perpendicular to described graphite plate 20 fronts, the bottom of groove expose the below graphite plate 20.The front of graphite plate of the present invention refer to graphite plate towards the surface of spray header (not shown) one side, more than definition is in full applicable, hereby explanation.
Bracing frame 21 of the present invention is positioned at the bottom of groove, and this bracing frame 21 is around one week of bottom of groove, and substrate 22 is positioned at bracing frame 21 tops.As an embodiment, a groove is only arranged in the graphite plate 20 shown in Figure 4, in other embodiment, in the graphite plate 20 a plurality of grooves can be arranged.
Support frame as described above 21 is used for substrate 22 is suspended so that substrate 22 do not contact with graphite plate 20, thereby eliminate owing to substrate 22 contacts the thermal conduction that brings with graphite plate 20 so that 20 pairs of substrates 22 of graphite plate be heated to be thermal radiation or take thermal radiation as main.
Please in conjunction with Fig. 5, be the schematic top plan view of graphite plate shown in Figure 4.Support frame as described above 21 be shaped as annular.This annular bracing frame 21 is around sidewall and one week of bottom of groove, and substrate 22 is positioned on the bracing frame 21.
Please continue with reference to figure 4, as an optional embodiment of the present invention, bracing frame 21 is positioned at the below of substrate 22.The back side of substrate 22 does not contact with graphite plate 20.The height L of support frame as described above 21 should satisfy, and when substrate 22 presented bowl-shape distortion (being that the middle part of substrate 22 is towards the deformation of bottom of groove), the back side of substrate 22 did not still contact with graphite plate 20.As another optional embodiment of the present invention, the thickness D sum of the height L of support frame as described above 21 and substrate 22 should equal the depth H of groove.The thickness D of substrate 22 of the present invention refers to not occur the front (towards the surface of the first side of spray) of the substrate of deformation and the distance between the back side (and surface of vis-a-vis), the height L of bracing frame of the present invention refer to the front of bracing frame 21 and the back side (with vis-a-vis and with the surface of spray header apart from farthest a side) distance.As an embodiment, the depth H scope of described groove is 300 microns~2 millimeters, and the thickness range of described substrate 22 is 300 microns~1.5 millimeters, and correspondingly, the altitude range of support frame as described above 21 is 290 microns~1.7 millimeters.
In the present embodiment, although the side of substrate 22 still has part to contact with the sidewall of groove, by this part contact, graphite plate 20 can be passed to substrate 22 with the part heat with heat exchange pattern, but the heat of heat exchange pattern conduction is limited, and is little on the homogeneity of the being heated impact of substrate 22.In other embodiment, can between the both sides of substrate 22 and graphite plate 20, thermal insulation layer be set, the material of this thermal insulation layer can be pottery.
As an embodiment, the width of support frame as described above 21 should be as far as possible little, to reduce and the contacting of substrate 22.As preferred embodiment, the width range of support frame as described above 21 is 1/10~1/20 of its top radius of placing substrate, and is stable that substrate 22 is unsettled to guarantee.
As an embodiment, the material of support frame as described above 21 is graphite, its can with graphite plate 20 integrated processing, also can process separately, then by mechanical component such as screw and nuts and graphite plate 20 is fixed together or be bonded as one by heat-resistant adhesive and graphite plate 20.
As embodiment of the present invention, the material of support frame as described above 21 can be transparent material, guarantees that like this heat of the graphite plate 20 of bracing frame 21 belows can transfer to substrate 22 through bracing frame 21.For example the material of support frame as described above 21 can be quartz, sapphire or both mixing.In the present embodiment, the material of support frame as described above 21 is sapphire.As another embodiment of the present invention, the material of support frame as described above 21 can also be adiabatic material, can reduce like this graphite plate 21 with heat transferred substrate 22, can be pottery, zirconium white or both mixing such as the material of support frame as described above 21.
Because graphite plate 20 may rotatablely move in technological process, can stablize in graphite plate 20 in order to guarantee substrate 22, certain inclination can be arranged at the sidewall of described groove and bottom, V-type is formed on the sidewall of groove and bottom, purpose be so that the diameter of the bottom of groove greater than the diameter of the opening part in the front of groove, thereby whole groove is round table-like, guarantees that substrate 22 is relatively stable with the position in the rotary course of graphite plate 20.
Request in person down the structural representation in conjunction with the graphite plate of second embodiment of the invention shown in Figure 6.The structure identical with the first embodiment adopts identical label.The difference of present embodiment and last embodiment is to have hole in the graphite plate 20, and this hole is positioned at the graphite plate 20 of groove below at the edge of substrate 22.Described hole is used for reducing the thermal radiation at 20 pairs of substrate 22 edges of graphite plate.
Because the contriver finds, when substrate 22 is heated, because the impact of fringing effect, the temperature at the edge of substrate 22 is usually above the temperature at the middle part of substrate 22, the present invention is by arranging hole in the graphite plate 20 at the edge of substrate 22, can reduce the thermal radiation to the edge of substrate 22, thereby so that the temperature at the edge of substrate 22 is consistent with the temperature at the middle part of substrate 22.The hole of the embodiment of the invention is arranged in the graphite plate 20 of substrate 22 both sides, and this hole is arranged on the front of graphite plate 20, also is the processing and fabricating for the ease of graphite plate 20.In other embodiment, described hole can also be positioned near other positions the edges of substrate, can be arranged in the graphite plate of the below, edge of substrate such as this hole, also can be arranged in the graphite plate of both sides at the edge of substrate; This hole can be connected with groove, perhaps can have the part graphite plate isolated between this hole and the groove, specifically will be described in detail in follow-up embodiment.
The below please refer to the structural representation of the graphite plate of third embodiment of the invention shown in Figure 7.The structure identical with the first embodiment adopts identical label to represent.The difference of present embodiment and the first embodiment is that support frame as described above 21 hangs on the graphite plate 20 of described groove both sides, and the top of support frame as described above 21 is fixed on the graphite plate 20 of both sides of described groove, and the bottom of support frame as described above 21 is used for placing substrate 22.
Support frame as described above 21 is notch cuttype.That is, the top of bracing frame 21 contacts with the front of the graphite plate 20 of groove both sides, side graphite plate 20 contacts of bracing frame 21, and the bottom of support frame as described above 21 is suspended on the groove.The bottom of support frame as described above 21 is used for placing substrate 22, the sidewall of bracing frame 21 is with side and graphite plate 20 isolation of substrate 22, so that substrate 22 does not contact fully with graphite plate 20, can reduce like this graphite plate 20 and with heat exchange pattern heat is transferred to substrate 22, so that the heating of 20 pairs of substrates 22 of graphite plate is in the thermal radiation mode as main, thereby further improve the homogeneity of being heated to substrate 22.
As preferred embodiment, the front of the front of support frame as described above 21, substrate 22 flushes with the front of graphite plate 20, can prevent that like this bracing frame 21 and graphite plate 20 from bringing impact to the gas of substrate 22 tops, improve the homogeneity of the air-flow distribution of substrate 22 tops.The front of bracing frame of the present invention refer to bracing frame towards the surface of spray header (not shown) one side, more than definition is applicable in full.
As one embodiment of the present of invention, have hole in the described graphite plate 20, this hole is positioned at the bottom of groove at the edge of substrate 22, and described hole is used for reducing the thermal radiation at the edge of 20 pairs of substrates 22 of graphite plate.In the present embodiment, described hole is connected with groove, can utilizing same processing step to make, be convenient to processing and the making of graphite plate 20.
Request in person down the structural representation in conjunction with the graphite plate of fourth embodiment of the invention shown in Figure 8, the parts identical with last embodiment adopt identical label to represent.The difference of present embodiment and last embodiment is, V-type is formed on the sidewall of groove and bottom, correspondingly, bracing frame 21 be shaped as Z-type, support frame as described above 21 hangs on the graphite plate 20 of groove both sides, the top of support frame as described above 21 is fixed on the graphite plate 20 of both sides of groove, and the bottom of support frame as described above 21 is used for placing substrate 22.The bracing frame 21 of the described Z-type of employing present embodiment is stationary substrate 22 better, prevents from being thrown out of when substrate 22 from rotating along with graphite plate 20.In the present embodiment, hole is arranged in the graphite plate 20 of below at the edge of substrate 22.
The below please refer to the structural representation of the graphite plate of fifth embodiment of the invention shown in Figure 9, and the structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is that the front of the front of described substrate 22, bracing frame 21 and the front of graphite plate 20 flush, and is conducive to like this to improve the homogeneity of the gas distribution on substrate 22 surfaces.
The below please refer to the structural representation of the graphite plate of sixth embodiment of the invention shown in Figure 10, and the structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is, all be formed with hole in the sidewall at the edge of substrate 22 and the graphite plate of bottom 20, and this hole is connected with groove in the present embodiment.In other embodiment, 20 isolation of part graphite plate can also be arranged between described hole and the groove.In the present embodiment, support frame as described above 21 be shaped as notch cuttype, the sidewall of this bracing frame 21 does not contact with the graphite plate 20 of groove both sides, can prevent that like this graphite plate 20 from conducting heat to substrate 22 by the sidewall of bracing frame 21, prevent that edge heating to substrate 22 from too much causing the lip temperature of substrate 22 to be higher than the temperature at the middle part of substrate 22, further improves the homogeneity of the temperature distribution of substrate 22.
In the present embodiment, the bottom of support frame as described above 21 does not contact with graphite plate 20, can prevent that also graphite plate 20 from by the edge of bracing frame 21 with heat transferred substrate 22, reducing the temperature contrast at edge and the middle part of substrate 22, further improve the homogeneity of distribution of the temperature of substrate 22.
Conduct heat to substrate in order further to reduce graphite plate by bracing frame, improve the homogeneity of the temperature distribution at the edge of substrate and middle part, as optional embodiment, can also form hole in part bracing frame and substrate contact, so further reduce the contact area of bracing frame and substrate.Particularly, please refer to the structural representation of the bottom of the bracing frame among Fig. 9 shown in Figure 11.As an embodiment, the top of bracing frame (not shown) is positioned on the graphite plate, and the bottom of bracing frame (namely being used for placing the part of substrate) is the double-doughnut structure.Such as figure, the bottom of this bracing frame specifically comprises outer shroud 211, interior ring 212 and is connected outer shroud 211 and the cross structure 213 of interior ring 212.Adopt the contact area of the bracing frame of described double-doughnut structure and substrate few, reduced graphite plate by the heat conducting heat transmission of bracing frame to substrate.
Please refer to the structural representation of the graphite plate of seventh embodiment of the invention shown in Figure 12.The structure identical with the 6th embodiment adopts identical label to represent.The difference of present embodiment and the 6th embodiment is that substrate 22 faces up and is positioned on the step-like bracing frame 21, and the front of the front of described substrate 22, bracing frame 21 and the front of graphite plate 20 flush.The difference of present embodiment and the 6th embodiment is that the shape of hole is different with the position.The hole of present embodiment is positioned at the bottom at the edge of substrate 121, is connected with bottom portion of groove.The degree of depth of hole of the present invention from the sidewall of groove below along substrate 121 radially to the reducing successively of the middle part direction of substrate 121, whole hole is triangular shape.Adopt described hole can further eliminate the thermal radiation of edges of substrate.
Please refer to the silicon substrate temperature distribution history of buckling deformation shown in Figure 15.Wherein transverse axis D represents and the distance (unit is millimeter) at the center of substrate, and longitudinal axis T represents temperature (unit is K).Radially do not mark quantitatively the temperature on the substrate among the figure, but show qualitatively radially substrate temperature variation tendency, the dotted line left side is the substrate middle part, and the dotted line right side is edges of substrate.Wherein curve 1 is to adopt the graphite plate of prior art to the analog result of the silicon substrate heating of buckling deformation.The middle part temperature distribution that curve 1 shows substrate is evenly distributed than the lip temperature of substrate, because the impact of fringing effect, the temperature at the edge of substrate is higher than the temperature at the middle part of substrate, and the lip temperature the closer to substrate rises faster, the homogeneity of temperature distribution is poorer, and the edge of substrate and the maximum temperature difference at middle part surpass 10K.Curve 2 is to adopt the graphite plate of present embodiment to the analog result of the silicon substrate heating of buckling deformation.The temperature distribution at the substrate middle part of curve 2 is more more even than the temperature distribution of edges of substrate, compare with curve 1, the temperature variation at the edge of substrate is comparatively mild, the edge of substrate and the maximum temperature difference at middle part are less than 4K, and this explanation adopts the graphite plate of the embodiment of the invention can effectively improve the homogeneity of temperature distribution on the substrate.
The below please refer to the structural representation of the graphite plate of the 8th embodiment shown in Figure 13.The structure identical with the 7th embodiment adopts identical label to represent.Be that with the difference of last embodiment bracing frame 21 is positioned at the middle part of groove, and support frame as described above 21 is made of a plurality of pillar stiffeners.In the present embodiment, the number of described pillar stiffener is 3, and described pillar stiffener is equilateral triangle arranges, being centered close to of the center of equilateral triangle and groove (bottom vertical of this vertical line and groove) on the same vertical line.Adopt the support column arrangement of present embodiment that substrate is suspended in the groove, can further reduce the thermal conduction between substrate and the graphite plate.
The below please refer to the structural representation of the graphite plate of ninth embodiment of the invention shown in Figure 14.The structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is, V-type is formed on the sidewall of the groove in the graphite plate 20 and bottom, and the below at the edge of substrate 22 and the graphite plate of the both sides 20 interior holes that all are formed with can further reduce the thermal radiation to the edge of substrate 22 like this.
To sum up, the groove of the graphite plate that the embodiment of the invention provides has corresponding with it bracing frame, utilize this bracing frame that substrate is suspended, so that substrate does not contact with graphite plate, when carrying out chemical vapor deposition method, (graphite plate heats up under the heating of heating unit graphite plate as the thermal source of substrate, can provide heat with thermal radiation and heat exchange pattern), because substrate does not contact with graphite plate, therefore utilize graphite plate of the present invention can realize that heating to substrate is in the thermal radiation mode as main, and prior art directly is placed on substrate in the groove of graphite plate (being that substrate directly contacts with graphite plate), therefore prior art to the heating of substrate take thermal conduction as main, when substrate generation buckling deformation, it is inhomogeneous that prior art causes the each point of substrate to be heated easily, cause the epitaxial material layer that forms on the substrate inhomogeneous, because the present invention utilizes the thermal radiation mode to heat, having eliminated prior art utilizes thermal conduction to heat the inhomogeneous impact that causes to the heating of each point on the substrate, improved the homogeneity to substrate heating, the homogeneity of the epitaxial material layer that forms on the corresponding homogeneity of having improved chemical vapor deposition method and the substrate;
Further optimally, the front of support frame as described above, the front of substrate flush with the front of graphite plate, can avoid the distribution of the air-flow in the graphite plate of substrate both sides and the front that bracing frame affects substrate, further improve the homogeneity of the air-flow distribution of substrate face;
Further optimally, has hole in the described graphite plate, be arranged in the graphite plate corresponding with the edge of described substrate, described hole is used for reducing graphite plate to the thermal radiation at the edge of substrate, so that the middle part of the edge of substrate and substrate is subject to is thermal-radiating basic identical, thereby further improve the homogeneity that substrate is heated;
Further optimally, be formed with a plurality of holes on support frame as described above and surface substrate contact, be used for reducing the contact area of support frame as described above and substrate, reduced the thermal conduction from graphite plate, further improved the homogeneity that substrate is heated;
Further optimally, support frame as described above hangs on the graphite plate of described groove both sides, the top of support frame as described above is fixed on the graphite plate of both sides of described groove, the bottom of support frame as described above is used for placing substrate, support frame as described above be shaped as the Z-type annulus, when substrate need to rotate together along with graphite plate, be conducive to guarantee that the position of substrate in graphite plate is relatively stable.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.

Claims (16)

1. the graphite plate of a chemical vapor deposition method has for the groove of placing substrate, it is characterized in that, the position at described groove place has corresponding with it bracing frame, and support frame as described above is used for substrate is suspended, so that substrate does not contact with graphite plate.
2. graphite plate as claimed in claim 1 is characterized in that, support frame as described above be shaped as annular, support frame as described above is around one week of bottom of described groove, support frame as described above is positioned at the below of substrate.
3. graphite plate as claimed in claim 1 is characterized in that, the sidewall of described groove and bottom consist of V-type.
4. graphite plate as claimed in claim 2 is characterized in that, support frame as described above and the thickness sum of the substrate of wherein placing equal the degree of depth of described groove.
5. graphite plate as claimed in claim 1 is characterized in that, support frame as described above hangs on the graphite plate of described groove both sides, and the top of support frame as described above is fixed on the graphite plate of both sides of described groove, and the bottom of support frame as described above is used for placing substrate.
6. graphite plate as claimed in claim 5 is characterized in that, support frame as described above be shaped as Z-type or notch cuttype.
7. graphite plate as claimed in claim 5 is characterized in that, the front of support frame as described above, the front of substrate flush with the front of graphite plate.
8. graphite plate as claimed in claim 1 is characterized in that, has hole in the described graphite plate, is arranged in the corresponding graphite plate in edge of substrate, and described hole is used for reducing graphite plate to the thermal radiation at the edge of substrate.
9. graphite plate as claimed in claim 1 is characterized in that, the material of support frame as described above is transparent material or adiabatic material.
10. graphite plate as claimed in claim 9 is characterized in that, described transparent material is a kind of or its mixing in quartz, the sapphire.
11. graphite plate as claimed in claim 9 is characterized in that, described adiabatic material is pottery, zirconium white or both mixing.
12. graphite plate as claimed in claim 1 is characterized in that, is formed with a plurality of holes on support frame as described above and surface substrate contact, is used for reducing the contact area of support frame as described above and substrate.
13. graphite plate as claimed in claim 12 is characterized in that, the part that is used for the placement substrate of support frame as described above is double-doughnut structure or a plurality of pillar stiffener.
14. graphite plate as claimed in claim 1 is characterized in that, the depth range of described groove is 300 microns~2 millimeters, and the altitude range of support frame as described above is 290 microns~1.7 millimeters.
15. in the chemical vapor deposition method process to the heating means of substrate, it is characterized in that, utilize the bracing frame corresponding with groove, described substrate is suspended, so that described substrate does not contact with graphite plate, utilize the thermal radiation of graphite plate that described substrate is heated.
16. the reaction chamber of a chemical vapor depsotition equipment is characterized in that, comprises graphite plate as claimed in claim 1.
CN2012100412036A 2012-02-22 2012-02-22 Graphite plate, reaction chamber with graphite plate, and substrate heating method Pending CN103074606A (en)

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PCT/CN2013/071446 WO2013123859A1 (en) 2012-02-22 2013-02-06 Graphite plate, reaction chamber having same, and method for heating substrate
TW102105167A TW201335414A (en) 2012-02-22 2013-02-08 Graphite disc, reaction chamber having the same and heating method for substrate

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CN106645954A (en) * 2015-11-03 2017-05-10 沈阳拓荆科技有限公司 Heating plate impedance measuring tool and heating plate impedance measuring method
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CN106906516A (en) * 2015-12-23 2017-06-30 财团法人工业技术研究院 Nitride semiconductor base plate structure and carrier
CN107326342A (en) * 2017-08-02 2017-11-07 中晟光电设备(上海)股份有限公司 For the graphite plate in MOCVD device
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Application publication date: 20130501