CN102981363A - Resist composition - Google Patents
Resist composition Download PDFInfo
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- CN102981363A CN102981363A CN 201210561307 CN201210561307A CN102981363A CN 102981363 A CN102981363 A CN 102981363A CN 201210561307 CN201210561307 CN 201210561307 CN 201210561307 A CN201210561307 A CN 201210561307A CN 102981363 A CN102981363 A CN 102981363A
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- resist composition
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Abstract
The invention relates to a resist composition which is characterized by comprising the following components in parts by weight: 10-20 parts of alkali-soluble acryloyl copolymer, 5-10 parts of naphthoquinone diazido ester, 2-5 parts of melamine derivative, 2-5 parts of polyvinyl alcohol phenol polymer, 35-40 parts of alkali-soluble novolac resin, 2-8 parts of alkyl alkoxy silane, 3-7 parts of alkyl germane, 2-6 parts of silicon dioxide, 1-5 parts of aluminum oxide, 2-5 parts of titanium dioxide, 4-7 parts of zirconium oxide, 2-4 parts of tin oxide, 3-7 parts of zinc oxide and 10-15 parts of absolute ethanol. The resist composition provided by the invention has excellent photosensitive speed, fogging rate and heat resistance.
Description
Technical field
The present invention relates to a kind of anti-corrosion agent composition.
Background technology
As liquid crystal indicator circuit or SIC (semiconductor integrated circuit), meticulous circuit pattern is painting erosion resistant agent composition on the dielectric film that substrate forms or conductive metal film, is cured, exposes, develops and form the pattern of target shape.The resist film that use has formed pattern carries out etching as mask to metal film or dielectric film, then removes residual resist film, thereby forms fine circuitry at substrate.This liquid crystal indicator circuit is categorized as minus and eurymeric with anti-corrosion agent composition according to the changes in solubility of exposed portion.
The key property of anti-corrosion agent composition comprises: the film speed of formed resist film, thermotolerance, development contrast, resolution, with the eases of use such as bounding force, residual film ratio, uniformity of circuit line width (CD Uniformity) and Personal Safety of substrate.
For various industrial purposes, particularly in the manufacturing of liquid crystal indicator or semiconductor circuit, resist film needs to form the resolution of the pattern degree with very thin line and space width (1 μ m is following).
Most anti-corrosion agent composition contains macromolecule resin, photosensitive compounds and the solvent that is used to form resist film.Carry out a lot of trials in the prior art and used film speed, development contrast, resolution and the Personal Safety of anti-corrosion agent composition to improve the liquid crystal indicator circuit.
Summary of the invention
The object of the invention is, considers the problem of above-mentioned conventional art, provides to have existing anti-corrosion agent composition.
A kind of anti-corrosion agent composition; it is characterized in that: the component by following weight portion forms, alkali solubility acryloyl group copolymer 1 0-20 part, naphthoquinones diazido carboxylate 5-10 part, melamine derivative 2-5 part, polyvinylphenol type polymkeric substance 2-5 part, alkali solubility novolac resin 35-40 part, alkylalkoxy silane 2-8 part, alkyl germane 3-7 part, silicon dioxide 2-6 part, aluminium oxide 1-5 part, titania 2-5 part, zirconia 4-7 part, tin oxide 2-4 part, zinc paste 3-7 part, absolute ethyl alcohol 10-15 part.
Adopt conventional method that above-mentioned raw materials is stirred in stirrer, stirring rate 2000-3000 rev/min, stirred whipping temp 100-150 ° C 30-60 minute.
Anti-corrosion agent composition film speed of the present invention, residual film ratio and excellent heat resistance.
Embodiment
Embodiment 1
A kind of anti-corrosion agent composition; it is characterized in that: the component by following weight portion forms, 0 part of alkali solubility acryloyl group copolymer 1,5 parts of naphthoquinones diazido carboxylates, 2 parts of melamine derivatives, 2 parts in polyvinylphenol type polymkeric substance, 35 parts of alkali solubility novolac resins, 2 parts of alkylalkoxy silanes, 3 parts of alkyl germanes, 2 parts of silicon dioxide, 1 part in aluminium oxide, 2 parts of titania, 4 parts of zirconias, 2 parts in tin oxide, 3 parts in zinc paste, 10 parts of absolute ethyl alcohols.
Embodiment 2
A kind of anti-corrosion agent composition; it is characterized in that: the component by following weight portion forms, 20 parts of alkali solubility acryloyl group multipolymers, 10 parts of naphthoquinones diazido carboxylates, 5 parts of melamine derivatives, 5 parts in polyvinylphenol type polymkeric substance, 40 parts of alkali solubility novolac resins, 8 parts of alkylalkoxy silanes, 7 parts of alkyl germanes, 6 parts of silicon dioxide, 5 parts in aluminium oxide, 5 parts of titania, 7 parts of zirconias, 4 parts in tin oxide, 7 parts in zinc paste, 15 parts of absolute ethyl alcohols.
Embodiment 3
A kind of anti-corrosion agent composition; it is characterized in that: the component by following weight portion forms, 5 parts of alkali solubility acryloyl group copolymer 1s, 7 parts of naphthoquinones diazido carboxylates, 3 parts of melamine derivatives, 4 parts in polyvinylphenol type polymkeric substance, 37 parts of alkali solubility novolac resins, 6 parts of alkylalkoxy silanes, 5 parts of alkyl germanes, 5 parts of silicon dioxide, 3 parts in aluminium oxide, 3 parts of titania, 5 parts of zirconias, 3 parts in tin oxide, 4 parts in zinc paste, 13 parts of absolute ethyl alcohols.
Claims (1)
1. anti-corrosion agent composition; it is characterized in that: the component by following weight portion forms, alkali solubility acryloyl group copolymer 1 0-20 part, naphthoquinones diazido carboxylate 5-10 part, melamine derivative 2-5 part, polyvinylphenol type polymkeric substance 2-5 part, alkali solubility novolac resin 35-40 part, alkylalkoxy silane 2-8 part, alkyl germane 3-7 part, silicon dioxide 2-6 part, aluminium oxide 1-5 part, titania 2-5 part, zirconia 4-7 part, tin oxide 2-4 part, zinc paste 3-7 part, absolute ethyl alcohol 10-15 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210561307 CN102981363A (en) | 2012-12-21 | 2012-12-21 | Resist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210561307 CN102981363A (en) | 2012-12-21 | 2012-12-21 | Resist composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102981363A true CN102981363A (en) | 2013-03-20 |
Family
ID=47855535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210561307 Pending CN102981363A (en) | 2012-12-21 | 2012-12-21 | Resist composition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102981363A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107209460A (en) * | 2015-01-30 | 2017-09-26 | 日产化学工业株式会社 | Photoetching comprising the hydrolysable silanes with carbonic ester skeleton is with resist lower membrane formation composition |
| CN108780277A (en) * | 2016-03-24 | 2018-11-09 | 陶氏环球技术有限责任公司 | Light with high-k can be imaged film |
-
2012
- 2012-12-21 CN CN 201210561307 patent/CN102981363A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107209460A (en) * | 2015-01-30 | 2017-09-26 | 日产化学工业株式会社 | Photoetching comprising the hydrolysable silanes with carbonic ester skeleton is with resist lower membrane formation composition |
| CN108780277A (en) * | 2016-03-24 | 2018-11-09 | 陶氏环球技术有限责任公司 | Light with high-k can be imaged film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130320 |