CN102801098B - Pulsed laser and method for controlling same - Google Patents
Pulsed laser and method for controlling same Download PDFInfo
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- CN102801098B CN102801098B CN201210313972.7A CN201210313972A CN102801098B CN 102801098 B CN102801098 B CN 102801098B CN 201210313972 A CN201210313972 A CN 201210313972A CN 102801098 B CN102801098 B CN 102801098B
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Abstract
The invention provides a pulsed laser which comprises a seed laser, piezoelectric ceramics, a laser crystal, a pumping source, an acousto-optic Q switch, a photoelectric detector, a seed injection locking system and an annular resonant cavity, wherein the annular resonant cavity comprises an input/output lens, a first reflector and a second reflector; the photoelectric detector is used for detecting light strength on an acousto-optic Q switch diffraction light path and sending a detection signal characterizing the light strength to the seed injection locking system; and the seed injection locking system ensures that the detection signal characterizing the light strength reaches an optimal value and closing the acousto-optic Q switch. It is thus clear that according to the pulsed laser, the resonant signal is detected on the acousto-optic Q switch diffraction light path, because the light strength on the diffraction light path is 30 percent that of the annular resonant cavity, the resonant signal is more easily detected. Meanwhile, the acousto-optic Q switch is closed when a laser pulse is established, the resonant signal does not exist on the diffraction light path, and therefore the detector can not be damaged. The invention also provides a method for controlling the pulsed laser.
Description
Technical field
The present invention relates to optics field, especially relate to a kind of method of pulse laser and control impuls laser.
Background technology
In pulse laser, conventionally use the laser technology of seed injection locking to realize laser pulse.The laser technology of seed injection locking is that the seed laser of single-frequency is injected in the resonant cavity of pulse laser, by surveying the resonance signal of seed laser, and then the resonance frequency of FEEDBACK CONTROL pulse laser, while making the resonance frequency of pulse laser consistent with seed frequency, produce laser pulse.
Acoustooptic Q-switching is a kind of conventional electronic device of realizing laser pulse output in pulse laser.In the pulse laser of employing acoustooptic Q-switching, for the ease of realizing seed injection locking, in prior art, a kind of conventional method is to adopt linear laser resonant cavity, seed laser is injected in resonant cavity by speculum, as the document " Frequency stabilization of Q-switched Nd:YAG oscillator for airborne and spaceborne LIDAR systems " of people's reports such as K.Nicklaus in 2007, because speculum will be considered the loss of laserresonator, therefore transmitance is very low conventionally, as 1% left and right, so also just require the seed laser injecting to there is larger power.For addressing this problem, conventional method is to adopt loop laser resonance cavity, seed laser is injected in laserresonator from input and output mirror, carry out resonance signal detection in speculum rear end, as the document " High-energy 2 μ m Doppler lidar for wind measurements " of people's reports such as Grady J.Koch, or after Laser output, adopting spectroscope to separate part signal surveys, as the document " Frequency stabilization of a Q-switched Nd:YAG laser oscillator with stability better 300kHz following an rf-sideband scheme " of people's reports such as Martin 0stermeyer, in this method, utilize the transmitance of input and output mirror higher, conventionally more than 10%, therefore do not need to inject very powerful seed laser.But, when carrying out resonance signal in speculum or spectroscope rear end while surveying, if speculum or spectroscopical transmitance are lower, be conventionally difficult for detecting resonance signal, and if speculum or spectroscope transmitance are higher, in the time that laser pulse is set up, because the peak power of laser pulse is higher, conventionally, more than kW, may cause detector damage, or cause detector long-term saturated and cause hydraulic performance decline, and then affect the stability of laser.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of method of pulse laser and control impuls laser, thereby can more easily detect resonance signal, can not cause to detector again the output laser pulse of realizing of damage.
For this reason, the technical scheme of technical solution problem of the present invention is:
The invention provides a kind of pulse laser, described pulse laser comprises seed laser, piezoelectric ceramic, laser crystal, pumping source, acoustooptic Q-switching, photodetector, seed injection locking system and the ring resonator being made up of input and output mirror, the first speculum and the second speculum.
Described seed laser is for the direction Injection seeded laser to the light path of described ring resonator by input and output mirror.
Described laser crystal and acoustooptic Q-switching are positioned in the light path of described ring resonator.
Described pumping source provides the energy of pumping to described laser crystal.
Described photodetector is for surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system.
The detection signal of sign luminous intensity that seed injection locking system is opened, sent according to photodetector for controlling acoustooptic Q-switching transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic, and in the time that the detection signal of the sign luminous intensity of photodetector transmission reaches optimum value, controls acoustooptic Q-switching and close; Described optimum value is maximum or the minimum value that characterizes the detection signal of luminous intensity.
Described piezoelectric ceramic is for long according to the chamber of ring resonator described in the control signal control of seed injection locking system.
Preferably, described piezoelectric ceramic and input and output mirror, the first speculum or the second speculum are bonding.
Preferably, described pulse laser also comprises the 3rd speculum.
The light on the optical diffraction of acoustooptic Q-switching is reflexed to photodetector by described the 3rd speculum.
Preferably, the laser crystal that described laser crystal is profile pump.
Described pumping source provides the energy of pumping to the laser crystal of described profile pump from the side of the laser crystal of described profile pump.
Preferably, described pumping source is semiconductor laser, light-emitting diode or photoflash lamp.
Preferably, the laser crystal that described laser crystal is single end face pump, described pumping source is the first semiconductor laser; The pumping end surface of the laser crystal of described single end face pump faces the first speculum.
Described the first semiconductor laser is by the rear end of described the first speculum, to the pumping end surface Emission Lasers of the laser crystal of described single end face pump.
Described the first speculum is the speculum that two sides is all coated with the first anti-reflection film; Wherein, the transmission peak wavelength of described the first anti-reflection film is the sharp light wavelength of described the first semiconductor laser transmitting.
Preferably, the laser crystal of described single end face pump is the laser crystal of the first single end face pump; Described pulse laser also comprises: the laser crystal of the second semiconductor laser, the second single end face pump and quartzy polarization apparatus.
The laser crystal of the laser crystal of described the second single end face pump and the first single end face pump is all in the light path of the ring resonator between the first speculum and the second speculum; The pumping end surface of the laser crystal of described the first single end face pump faces the first speculum; The pumping end surface of the laser crystal of described the second single end face pump faces the second speculum; Described quartzy polarization apparatus is in the light path of the ring resonator between the laser crystal of the first single end face pump and the laser crystal of the second single end face pump.
Described the second semiconductor laser is by the rear end of described the second speculum, to the pumping end surface Emission Lasers of the laser crystal of described the second single end face pump.
Described the second speculum is the speculum that two sides is all coated with the second anti-reflection film; Wherein, the transmission peak wavelength of described the second anti-reflection film is the sharp light wavelength of described the second semiconductor laser transmitting.
Preferably, the laser crystal that described laser crystal is double-end pumping and the laser crystal of described double-end pumping are in the light path of the ring resonator between the first speculum and the second speculum; The first pumping end surface of the laser crystal of described double-end pumping faces the first speculum; The second pumping end surface of the laser crystal of described double-end pumping faces the second speculum; Described pumping source is the first semiconductor laser.
Described the first semiconductor laser is by the rear end of described the first speculum, to the first pumping end surface Emission Lasers of the laser crystal of described double-end pumping.
Described pulse laser also comprises: the second semiconductor laser.
Described the second semiconductor laser is by the rear end of described the second speculum, to the second pumping end surface Emission Lasers of the laser crystal of described double-end pumping.
Described the first speculum is the speculum that two sides is all coated with the anti-reflection film of the sharp light wavelength of described the first semiconductor laser transmitting.
Described the second speculum is the speculum that two sides is all coated with the anti-reflection film of the sharp light wavelength of described the second semiconductor laser transmitting.
Preferably, described pulse laser also comprises: collimating lens and condenser lens.
Described collimating lens is for collimating to the laser of described the first semiconductor laser transmitting.
Described condenser lens is for focusing on the laser after described collimating lens collimation.
Preferably, described pulse laser also comprises: collimating lens and condenser lens.
Described collimating lens is for collimating to the laser of described the second semiconductor laser transmitting.
Described condenser lens is for focusing on the laser after described collimating lens collimation.
Preferably, described ring resonator is 4 mirror annular chambers; Described ring resonator also comprises the 4th speculum.
The invention provides a kind of method of control impuls laser, described method is for pulse laser, and described pulse laser comprises: seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator.Described method comprises:
Open seed laser and acoustooptic Q-switching;
Survey the luminous intensity on the optical diffraction of described acoustooptic Q-switching;
Make the detection signal that characterizes luminous intensity reach optimum value according to the length of the detection signal control ring resonator that characterizes described luminous intensity; Wherein, described optimum value is maximum or the minimum value that characterizes the detection signal of luminous intensity;
When reaching optimum value, the detection signal of sign luminous intensity closes acoustooptic Q-switching.
Known by technique scheme, the present invention has utilized acoustooptic Q-switching generation of forced diffraction in the time opening, and in the time closing, do not produce the mechanism of diffraction, on acoustooptic Q-switching optical diffraction, carry out resonance signal detection, because the luminous intensity on acoustooptic Q-switching optical diffraction can reach 30% of luminous intensity in the light path of ring resonator conventionally, therefore, can more easily on acoustooptic Q-switching optical diffraction, detect resonance signal.In the time that reaching the most by force or be the most weak, the resonance signal detecting closes acoustooptic Q-switching, now set up laser pulse, because acoustooptic Q-switching cuts out, on acoustooptic Q-switching optical diffraction, there is not resonance signal, therefore can not cause due to the higher peak power of laser pulse the damage of detector.
Accompanying drawing explanation
Fig. 1 is the specific embodiment of pulse laser provided by the invention;
Fig. 2 is another specific embodiment of pulse laser provided by the invention;
Fig. 3 is another specific embodiment of pulse laser provided by the invention;
Fig. 4 is another specific embodiment of pulse laser provided by the invention;
Fig. 5 is another specific embodiment of pulse laser provided by the invention;
Fig. 6 is another specific embodiment of pulse laser provided by the invention;
Fig. 7 is another specific embodiment of pulse laser provided by the invention;
Fig. 8 is another specific embodiment of pulse laser provided by the invention;
Fig. 9 is a specific embodiment of the method for control impuls laser provided by the invention.
Embodiment
Acoustooptic Q-switching is a kind of conventional electronic device of realizing laser pulse in pulse laser.Acoustooptic Q-switching is to change formation ultrasonic wave by electroacoustic modulated media refractive index generating period is changed, and incident light is played to the effect of diffraction grid, makes it to occur diffraction loss, and Q value declines, and laser generation can not form.Under optical pumping excitation, level inversion population constantly accumulates and the value of reaching capacity on it, now removes suddenly ultrasonic field, and diffraction effect disappears immediately, and in chamber, Q value is surged, and laser generation recovers rapidly, and its energy is with giant pulse formal output.Generation of forced diffraction while having utilized acoustooptic Q-switching to open in the present invention, and in the time closing, diffraction effect disappears immediately, forms the feature of pulse laser, on the optical diffraction of acoustooptic Q-switching, resonance signal is surveyed.
Refer to Fig. 1, the invention provides a kind of specific embodiment of pulse laser, described pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.Here, seed laser is the laser of single-frequency, and the frequency of seed laser is identical with the frequency of the laser pulse of the final output of described pulse laser.
The laser crystal 103 of profile pump is in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, the laser crystal 103 of profile pump and acoustooptic Q-switching 104 all only need be positioned in the light path of ring resonator, and particular location is circumscribed not.
The side of the laser crystal 103 of the first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of described profile pump, that is to say, the side of the laser crystal 103 of the first semiconductor laser 110 pumping is from the side to laser crystal 103 Emission Lasers of profile pump.
Here the laser crystal 103 that the laser crystal that, pulse laser adopts is profile pump.In other embodiments, the laser crystal that pulse laser adopts can be also the laser crystal of single end face pump or double-end pumping, and the first semiconductor laser provides the direction of the energy of pumping need to produce corresponding variation.For example, when the laser crystal that pulse laser the adopts laser crystal that is single end face pump, adopt semiconductor laser or other pumping source that the energy of pumping is provided to the laser crystal of single end face pump from the pumping end surface of the laser crystal of single end face pump.
Here, the first semiconductor laser 110 can be also the pumping source of other form, as photoflash lamp, light-emitting diode etc.
Described photodetector 105 is for surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching 104, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.In this embodiment, photodetector 105 is positioned on the optical diffraction of acoustooptic Q-switching, luminous intensity on the optical diffraction of direct detection acoustooptic Q-switching, and the luminous intensity on the optical diffraction of acoustooptic Q-switching is converted to the corresponding signal of telecommunication, this signal of telecommunication is sent to seed injection locking system 106.In other embodiments, consider the utilance in space, also can the luminous intensity on the optical diffraction of acoustooptic Q-switching be reflexed to photodetector 105 by speculum or other optical element.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.
Here, piezoelectric ceramic is bonded on input and output mirror 107, drives input and output mirror 107 to vibrate according to the control signal of seed injection locking system 106, thereby the chamber of change ring resonator is long.And the long variation in the chamber of ring resonator causes the variation of light frequency in the light path of ring resonator, when the laser frequency of launching with seed laser 101 when light frequency in the light path of ring resonator is identical, in the light path of ring resonator, light intensity is maximum or minimum, and the luminous intensity that therefore photodetector 105 is surveyed is same maximum or minimum.Now close acoustooptic Q-switching, in ring resonator light path, set up laser pulse, and by input and output mirror 107 these laser pulses of output.The detection signal that seed injection locking system 106 can adopt the technology such as Ramp-Fire, Ramp-Hold-Fire, Cavity Dither or Pound-Drever-Hall to realize the sign luminous intensity sending according to photodetector 105 transmits control signal to make the detection signal of described sign luminous intensity maximum or minimum to piezoelectric ceramic 102.
Piezoelectric ceramic also can be bonded on the first speculum 108 or the second speculum 109.In the time being bonded on input and output mirror 107, in order not block light path, piezoelectric ceramic is required to be hollow.In the time being bonded in the rear end of the first speculum or the second speculum, do not need to consider that piezoelectric ceramic stops the impact of light path, piezoelectric ceramic can be hollow or solid.
The first speculum and the second speculum have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum and the second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.
Pulse laser provided by the invention can be applied to the technical field such as Doppler's coherent wind, gas differential absorbing detection laser radar.
Fig. 2 is another specific embodiment of pulse laser provided by the invention, and the difference of the embodiment shown in this embodiment and Fig. 1 is, in this embodiment, piezoelectric ceramic is bonded in the rear end on the first speculum.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 201, profile pump.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 103 of profile pump is in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, the laser crystal 103 of profile pump and acoustooptic Q-switching 104 all only need be positioned in the light path of ring resonator, and particular location is circumscribed not.
The side of the laser crystal 103 of the first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of described profile pump, that is to say, the side of the laser crystal 103 of the first semiconductor laser 110 pumping is from the side to laser crystal 103 Emission Lasers of profile pump.
Described photodetector 105 is for surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching 104, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 201, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 201 is bonded in the rear end of the first speculum 108, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 201 can be hollow or solid.
The first speculum and the second speculum have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum and the second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.
Fig. 3 is another specific embodiment of pulse laser provided by the invention, in this embodiment, and in order to consider, to the making full use of of space, by the 3rd speculum, the light on acoustooptic Q-switching optical diffraction to be reflexed in photodetector 105.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109, the 3rd speculum 301 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 103 of profile pump is in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, the laser crystal 103 of profile pump and acoustooptic Q-switching 104 all only need be positioned in the light path of ring resonator, and particular location is circumscribed not.
The side of the laser crystal 103 of the first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of described profile pump, that is to say, the side of the laser crystal 103 of the first semiconductor laser 110 pumping is from the side to laser crystal 103 Emission Lasers of profile pump.
The light on acoustooptic Q-switching 104 optical diffractions is reflexed to photodetector by the 3rd speculum 301.
Described photodetector 105 is for the luminous intensity on the optical diffraction of the acoustooptic Q-switching surveying the 3rd speculum 301 and reflect, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 107 is hollow.
The first speculum 108 and the second speculum 109 have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum 108 and the second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.
In the above-described embodiments, laser crystal is the laser crystal of profile pump, introduces respectively the situation that laser crystal is the laser crystal of single end face pump and the laser crystal of double-end pumping below.
Refer to Fig. 4, the present invention also provides a kind of specific embodiment of pulse laser, and in this embodiment, what laser crystal adopted is the laser crystal of single end face pump.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 403, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109, the first semiconductor laser 110, the 3rd speculum 301, collimating lens 401 and the condenser lens 402 of seed laser 101, piezoelectric ceramic 102, single end face pump.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 403 of single end face pump is in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, the laser crystal 403 of single end face pump and acoustooptic Q-switching 104 all only need be positioned in the light path of ring resonator, and particular location is circumscribed not.
The first semiconductor laser 110 provides the energy of pumping to the laser crystal 403 of described single end face pump from the pumping end surface of the laser crystal 403 of single end face pump, here, the first semiconductor laser 110 is from the rear end of the second just right speculum of the pumping end surface of the laser crystal 403 of single end face pump, and the direction of the pumping end surface of the laser crystal 403 along the second speculum to described single end face pump is to laser crystal 403 Emission Lasers of single end face pump.
The light on acoustooptic Q-switching 104 optical diffractions is reflexed to photodetector by the 3rd speculum 301.
Described photodetector 105 is for the luminous intensity on the optical diffraction of the acoustooptic Q-switching surveying the 3rd speculum 301 and reflect, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 collimates for the laser that the first semiconductor laser 110 is launched.Laser after condenser lens 402 collimates for collimation lens 401 focuses on.
The first speculum 108 and the second speculum 109 have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum 108 and the second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.The second speculum 109, except the total reflection of light path, has also been realized the laser that the first semiconductor laser 110 is launched and has been seen through to the pumping end surface of the laser crystal 403 of single end face pump, and therefore, the two sides of the second speculum 109 is all coated with the first anti-reflection film; Wherein, the transmission peak wavelength of the first anti-reflection film is the sharp light wavelength that described the first semiconductor laser 110 is launched.
Fig. 5 is another specific embodiment of pulse laser provided by the invention, and in this embodiment, what laser crystal adopted is the laser crystal of double-end pumping.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 504, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109, the first semiconductor laser 110, the 3rd speculum 301, collimating lens 401, condenser lens 402, the second semiconductor laser 501, collimating lens 502 and the condenser lens 503 of seed laser 101, piezoelectric ceramic 102, double-end pumping.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 504 of double-end pumping is in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, 104 need of acoustooptic Q-switching are positioned in the light path of ring resonator, and particular location is circumscribed not.The laser crystal 504 of double-end pumping can only be in the light path of the ring resonator between the first speculum 108 and the second speculum 109.
The first semiconductor laser 110 provides the energy of pumping to the laser crystal 504 of described double-end pumping from the first pumping end surface of the laser crystal 504 of double-end pumping, here, the first semiconductor laser 110 is from the rear end of the second just right speculum of the first pumping end surface of the laser crystal 504 of double-end pumping, and the direction of the first pumping end surface of the laser crystal 504 along the second speculum to described double-end pumping is to laser crystal 504 Emission Lasers of double-end pumping.
The second semiconductor laser 501 provides the energy of pumping to the laser crystal 504 of described double-end pumping from the second pumping end surface of the laser crystal 504 of double-end pumping, here, the second semiconductor laser 501 is from the rear end of the first just right speculum of the second pumping end surface of the laser crystal 504 of double-end pumping, and the direction of the second pumping end surface of the laser crystal 504 along the first speculum to described double-end pumping is to laser crystal 504 Emission Lasers of double-end pumping.
The light on acoustooptic Q-switching 104 optical diffractions is reflexed to photodetector 105 by the 3rd speculum 301.
Described photodetector 105 is for the luminous intensity on the optical diffraction of the acoustooptic Q-switching surveying the 3rd speculum 301 and reflect, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 collimates for the laser that the first semiconductor laser 110 is launched.Laser after condenser lens 402 collimates for collimation lens 401 focuses on.Collimating lens 502 collimates for the laser that the second semiconductor laser 501 is launched.Laser after condenser lens 503 collimates for collimation lens 502 focuses on.
The first speculum and the second speculum have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum and the second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.In addition, the first speculum 108 is except the total reflection of light path, also realized the laser that the second semiconductor laser 501 is launched and seen through to the second pumping end surface of the laser crystal 504 of double-end pumping, therefore, the two sides of the first speculum 108 is all coated with the second anti-reflection film; Wherein, the transmission peak wavelength of the second anti-reflection film is the sharp light wavelength that described the second semiconductor laser 501 is launched.And the second speculum 109 is except the total reflection of light path, also realize the laser that the first semiconductor laser 110 is launched to see through to the first pumping end surface of the laser crystal 403 of double-end pumping, therefore, the two sides of the second speculum 109 is all coated with the first anti-reflection film; Wherein, the transmission peak wavelength of the first anti-reflection film is the sharp light wavelength that described the first semiconductor laser 110 is launched.
In above embodiment, only a laser crystal is carried out to pumping, in order to increase the gain of pulse laser, introduce a kind of situation of simultaneously two laser crystals being carried out to pumping below.
Fig. 6 is another specific embodiment of pulse laser provided by the invention, in this embodiment, two laser crystals is carried out to pumping simultaneously.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 403, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109, the first semiconductor laser 110, the 3rd speculum 301, collimating lens 401, condenser lens 402, the second semiconductor laser 501, collimating lens 502, the condenser lens 503 of seed laser 101, piezoelectric ceramic 102, single end face pump, laser crystal 601 and the quartzy polarization apparatus 602 of single end face pump.Wherein, input and output mirror 107, the first speculum 108 and the second speculum 109 form the ring resonator of three mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 403 of single end face pump and the laser crystal 601 of single end face pump are in the light path of the ring resonator between the first speculum 108 and the second speculum 109, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, 104 need of acoustooptic Q-switching are positioned in the light path of ring resonator, and particular location is circumscribed not.The laser crystal 403 of single end face pump and the laser crystal 601 of single end face pump all can only be in the light paths of the ring resonator between the first speculum 108 and the second speculum 109.
The first semiconductor laser 110 provides the energy of pumping to the laser crystal 403 of described single end face pump from the pumping end surface of the laser crystal 403 of single end face pump, here, the first semiconductor laser 110 is from the rear end of the second just right speculum 109 of the pumping end surface of the laser crystal 403 of single end face pump, and the direction of the pumping end surface of the laser crystal 403 along the second speculum 109 to described single end face pump is to laser crystal 403 Emission Lasers of single end face pump.
The second semiconductor laser 501 provides the energy of pumping to the laser crystal 601 of described single end face pump from the pumping end surface of the laser crystal 601 of single end face pump, here, the second semiconductor laser 501 is from the rear end of the first just right speculum 108 of the pumping end surface of the laser crystal 601 of single end face pump, and the direction of the pumping end surface of the laser crystal 601 along the first speculum 108 to described single end face pump is to laser crystal 601 Emission Lasers of single end face pump.
Quartz polarization apparatus 603 is in the light path of the ring resonator between the laser crystal 601 of single end face pump and the laser crystal 403 of single end face pump.Quartz polarization apparatus 603 compensates the thermally induced birefringence of laser crystal.
The light on acoustooptic Q-switching optical diffraction is reflexed to photodetector by the 3rd speculum 301.
Described photodetector 105 is for the luminous intensity on the optical diffraction of the acoustooptic Q-switching surveying the 3rd speculum 301 and reflect, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 collimates for the laser that the first semiconductor laser 110 is launched.Laser after condenser lens 402 collimates for collimation lens 401 focuses on.Collimating lens 502 collimates for the laser that the second semiconductor laser 501 is launched.Laser after condenser lens 503 collimates for collimation lens 502 focuses on.
The first speculum and the second speculum have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum and the second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.In addition, the first speculum 108, except the total reflection of light path, has also been realized the laser that the second semiconductor laser 501 is launched and has been seen through to the pumping end surface of the laser crystal 504 of single end face pump, and therefore, the two sides of the first speculum 108 is all coated with the second anti-reflection film; Wherein, the transmission peak wavelength of the second anti-reflection film is the sharp light wavelength that described the second semiconductor laser 501 is launched.And the second speculum 109 is except the total reflection of light path, also realize the laser that the first semiconductor laser 110 is launched to see through to the pumping end surface of the laser crystal 403 of single end face pump, therefore, the two sides of the second speculum 109 is all coated with the first anti-reflection film; Wherein, the transmission peak wavelength of the first anti-reflection film is the sharp light wavelength that described the first semiconductor laser 110 is launched.
In above-described embodiment, ring resonator is the ring resonator of three mirrors, and in other embodiments, also can adopt the ring resonator of four mirrors or five mirrors, does not affect realization of the present invention.Describe below by a specific embodiment.
Refer to Fig. 7, the invention provides another specific embodiment of pulse laser, in this embodiment, ring resonator is the resonant cavity of four mirrors.Specific as follows:
In this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, the first speculum 108, the second speculum 109, the 3rd speculum 301, the 4th speculum 701 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, the first speculum 108, the second speculum 109 and the 4th speculum 701 form the ring resonator of four mirrors.
Described seed laser 101 is for the direction Injection seeded laser to the light path of ring resonator by input and output mirror 107.
The laser crystal 103 of profile pump is in the light path of the ring resonator between the first speculum 108 and the 4th speculum 701, and acoustooptic Q-switching 104 is in the light path of the ring resonator between the second speculum 109 and input and output mirror 107.Here, the laser crystal 103 of profile pump and acoustooptic Q-switching 104 all only need be positioned in the light path of ring resonator, and particular location is circumscribed not.
The side of the laser crystal 103 of the first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of described profile pump, that is to say, the side of the laser crystal 103 of the first semiconductor laser 110 pumping is from the side to laser crystal 103 Emission Lasers of profile pump.
The light on acoustooptic Q-switching optical diffraction is reflexed to photodetector by the 3rd speculum 301.
Described photodetector 105 is for surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd speculum reflection, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system 106.
The detection signal of the sign luminous intensity that seed injection locking system 106 is opened, sent according to photodetector 105 for controlling acoustooptic Q-switching 104 transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity sending when photodetector 105 is controlled acoustooptic Q-switching 104 while reaching optimum value and closed.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.
Described piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, for long according to the chamber of ring resonator described in the control signal control of seed injection locking system 106.Piezoelectric ceramic 107 is hollow.
The first speculum 108 and the second speculum 109 have all been realized the total reflection of light path in resonant cavity in this embodiment, therefore, the first speculum 108 and the second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the sharp light wavelength that seed laser 101 is launched.
Equally, also can adopt the ring resonator of five mirrors, concrete structure refers to Fig. 8, with the employing shown in Fig. 7 compared with the laser of ring resonator of four mirrors, difference is that the laser shown in Fig. 8 adopts the ring resonator of five mirrors, and the ring resonator of five mirrors is made up of input and output mirror 107, the first speculum 108, the second speculum 109, the 5th speculum 801 and the 6th speculum 802.Embodiment shown in specific implementation and Fig. 7 is similar, therefore repeat no more.
Refer to Fig. 9, the present invention also provides a kind of method of controlling laser that realizes, described method can be in a kind of pulse laser, described pulse laser can be the pulse laser in any embodiment shown in Fig. 1 to Fig. 8, and described pulse laser also can comprise for other pulse laser of seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator.The method comprises:
S901: open seed laser and acoustooptic Q-switching.Here, the laser of seed laser transmitting is injected in annular resonance.Acoustooptic Q-switching is positioned in the light path of ring resonator.
S902: survey the luminous intensity on the optical diffraction of described acoustooptic Q-switching.Can realize the luminous intensity on the optical diffraction of surveying acoustooptic Q-switching by the sensitive detection parts of photodetector or other luminous intensity.
S903: make the detection signal that characterizes luminous intensity reach optimum value according to the length of the detection signal control ring resonator that characterizes described luminous intensity.Here, optimum value is determined by concrete light path, can be for characterizing the maximum of detection signal of luminous intensity or the minimum value of the detection signal of sign luminous intensity.The detection signal that characterizes described luminous intensity can be for characterizing described luminous intensity current signal or other physical signallings.The length of ring resonator can regulate by piezoelectric ceramic.Can adopt the technology such as Ramp-Fire, Ramp-Hold-Fire, Cavity Dither or Pound-Drever-Hall to realize according to the length of the detection signal control ring resonator that characterizes described luminous intensity makes the detection signal that characterizes luminous intensity reach optimum value.
S904: close acoustooptic Q-switching when the detection signal of sign luminous intensity reaches optimum value.The detection signal of the sign luminous intensity detecting is maximum or hour, illustrate that the sharp light frequency that the sharp light frequency in resonant cavity launches with seed laser is identical, now closes acoustooptic Q-switching, in ring resonator light path, sets up laser pulse.Because acoustooptic Q-switching cuts out, the diffraction effect of acoustooptic Q-switching disappears, and no longer has light signal on the optical diffraction of acoustooptic Q-switching.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a pulse laser, it is characterized in that, described pulse laser comprises seed laser, piezoelectric ceramic, laser crystal, pumping source, acoustooptic Q-switching, photodetector, seed injection locking system and the ring resonator being made up of input and output mirror, the first speculum and the second speculum;
Described seed laser is for the direction Injection seeded laser to the light path of described ring resonator by input and output mirror;
Described laser crystal and acoustooptic Q-switching are positioned in the light path of described ring resonator;
Described pumping source provides the energy of pumping to described laser crystal;
Described photodetector is for surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching, and the detection signal that characterizes described luminous intensity is sent to seed injection locking system;
The detection signal of sign luminous intensity that seed injection locking system is opened, sent according to photodetector for controlling acoustooptic Q-switching transmits control signal to make the detection signal of described sign luminous intensity to reach optimum value to piezoelectric ceramic, and in the time that the detection signal of the sign luminous intensity of photodetector transmission reaches optimum value, controls acoustooptic Q-switching and close; Described optimum value is maximum or the minimum value that characterizes the detection signal of luminous intensity;
Described piezoelectric ceramic is for long according to the chamber of ring resonator described in the control signal control of seed injection locking system;
Described laser crystal is the laser crystal of single end face pump, and described pumping source is the first semiconductor laser; The pumping end surface of the laser crystal of described single end face pump faces the first speculum;
Described the first semiconductor laser is by the rear end of described the first speculum, to the pumping end surface Emission Lasers of the laser crystal of described single end face pump;
Described the first speculum is the speculum that two sides is all coated with the first anti-reflection film; Wherein, the transmission peak wavelength of described the first anti-reflection film is the sharp light wavelength of described the first semiconductor laser transmitting;
The laser crystal of described single end face pump is the laser crystal of the first single end face pump; Described pulse laser also comprises: the laser crystal of the second semiconductor laser, the second single end face pump and quartzy polarization apparatus;
The laser crystal of the laser crystal of described the second single end face pump and the first single end face pump is all in the light path of the ring resonator between the first speculum and the second speculum; The pumping end surface of the laser crystal of described the first single end face pump faces the first speculum; The pumping end surface of the laser crystal of described the second single end face pump faces the second speculum; Described quartzy polarization apparatus is in the light path of the ring resonator between the laser crystal of the first single end face pump and the laser crystal of the second single end face pump;
Described the second semiconductor laser is by the rear end of described the second speculum, to the pumping end surface Emission Lasers of the laser crystal of described the second single end face pump;
Described the second speculum is the speculum that two sides is all coated with the second anti-reflection film; Wherein, the transmission peak wavelength of described the second anti-reflection film is the sharp light wavelength of described the second semiconductor laser transmitting.
2. pulse laser according to claim 1, is characterized in that, described piezoelectric ceramic and input and output mirror, the first speculum or the second speculum are bonding.
3. pulse laser according to claim 1, is characterized in that, described pulse laser also comprises the 3rd speculum;
The light on the optical diffraction of acoustooptic Q-switching is reflexed to photodetector by described the 3rd speculum.
4. pulse laser according to claim 1, is characterized in that, described pulse laser also comprises: collimating lens and condenser lens;
Described collimating lens is for collimating to the laser of described the first semiconductor laser transmitting;
Described condenser lens is for focusing on the laser after described collimating lens collimation.
5. pulse laser according to claim 1, is characterized in that, described pulse laser also comprises: collimating lens and condenser lens;
Described collimating lens is for collimating to the laser of described the second semiconductor laser transmitting;
Described condenser lens is for focusing on the laser after described collimating lens collimation.
6. the method for a control impuls laser, it is characterized in that, described method is for the pulse laser as described in claim 1 to 5 any one, and described pulse laser comprises: seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator; Described method comprises:
Open seed laser and acoustooptic Q-switching;
Survey the luminous intensity on the optical diffraction of described acoustooptic Q-switching;
Make the detection signal that characterizes luminous intensity reach optimum value according to the length of the detection signal control ring resonator that characterizes described luminous intensity; Wherein, described optimum value is maximum or the minimum value that characterizes the detection signal of luminous intensity;
When reaching optimum value, the detection signal of sign luminous intensity closes acoustooptic Q-switching.
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| CN108963751B (en) * | 2018-07-18 | 2020-09-01 | 中国电子科技集团公司第四十四研究所 | Injection-locked semiconductor laser |
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