CN102801098A - Pulsed laser and method for controlling same - Google Patents
Pulsed laser and method for controlling same Download PDFInfo
- Publication number
- CN102801098A CN102801098A CN2012103139727A CN201210313972A CN102801098A CN 102801098 A CN102801098 A CN 102801098A CN 2012103139727 A CN2012103139727 A CN 2012103139727A CN 201210313972 A CN201210313972 A CN 201210313972A CN 102801098 A CN102801098 A CN 102801098A
- Authority
- CN
- China
- Prior art keywords
- laser
- speculum
- pumping
- crystal
- laser crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a pulsed laser which comprises a seed laser, piezoelectric ceramics, a laser crystal, a pumping source, an acousto-optic Q switch, a photoelectric detector, a seed injection locking system and an annular resonant cavity, wherein the annular resonant cavity comprises an input/output lens, a first reflector and a second reflector; the photoelectric detector is used for detecting light strength on an acousto-optic Q switch diffraction light path and sending a detection signal characterizing the light strength to the seed injection locking system; and the seed injection locking system ensures that the detection signal characterizing the light strength reaches an optimal value and closing the acousto-optic Q switch. It is thus clear that according to the pulsed laser, the resonant signal is detected on the acousto-optic Q switch diffraction light path, because the light strength on the diffraction light path is 30 percent that of the annular resonant cavity, the resonant signal is more easily detected. Meanwhile, the acousto-optic Q switch is closed when a laser pulse is established, the resonant signal does not exist on the diffraction light path, and therefore the detector can not be damaged. The invention also provides a method for controlling the pulsed laser.
Description
Technical field
The present invention relates to the optics field, especially relate to the method for a kind of pulse laser and control impuls laser.
Background technology
Usually use the laser technology of seed injection locking to realize laser pulse in the pulse laser.The laser technology of seed injection locking is that the seed laser with single-frequency is injected in the resonant cavity of pulse laser; Through surveying the resonance signal of seed laser; And then the resonance frequency of FEEDBACK CONTROL pulse laser, produce laser pulse when making the resonance frequency of pulse laser consistent with seed frequency.
Acoustooptic Q-switching is an electronic device a kind of commonly used of realizing laser pulse output in the pulse laser.In the pulse laser that adopts acoustooptic Q-switching; For the ease of realizing seed injection locking; A kind of method commonly used is to adopt the linear laser resonant cavity in the prior art, seed laser is injected in the resonant cavity through speculum, like the document " Frequency stabilization of Q-switched Nd:YAG oscillator for airborne and spaceborne LIDAR systems " of people such as K.Nicklaus report in 2007; Because speculum will be considered the loss of laserresonator; Therefore transmitance is very low usually, as about 1%, so also has bigger power with regard to the seed laser that requires to inject.For addressing this problem; Method commonly used is to adopt loop laser resonance cavity, and seed laser is injected in the laserresonator from the input and output mirror, carries out resonance signal in the speculum rear end and surveys; Document " High-energy 2 μ m Doppler lidar for wind measurements " like people such as Grady J.Koch report; Perhaps after laser output, adopt spectroscope to tell part signal and survey, like the document " Frequency stabilization of a Q-switched Nd:YAG laser oscillator with stability better 300kHz following an rf-sideband scheme " of people such as Martin 0stermeyer report; In this method; Utilize the transmitance of input and output mirror higher,, therefore need not inject very powerful seed laser usually more than 10%.Yet, when carrying out resonance signal in speculum or spectroscope rear end when surveying, if speculum or spectroscopical transmitance are lower; Then be difficult for detecting resonance signal usually, and if speculum or spectroscope transmitance are higher, then when laser pulse is set up; Because peak-power of laser pulse is higher, more than kW, then possibly cause the detector damage usually; Perhaps cause detector long-term saturated and cause decreased performance, and then influence the stability of laser.
Summary of the invention
The technical problem that the present invention solves is to provide the method for a kind of pulse laser and control impuls laser, thereby can promptly be prone to detect resonance signal, can not cause the realization output laser pulse of damage again to detector.
For this reason, the technical scheme of technical solution problem of the present invention is:
The invention provides a kind of pulse laser, said pulse laser comprises seed laser, piezoelectric ceramic, laser crystal, pumping source, acoustooptic Q-switching, photodetector, seed injection locking system and the ring resonator of being made up of input and output mirror, first speculum and second speculum.
Said seed laser is used for injecting seed laser by the input and output mirror to the direction of the light path of said ring resonator.
Said laser crystal and acoustooptic Q-switching are positioned on the light path of said ring resonator.
Said pumping source provides the energy of pumping to said laser crystal.
Said photodetector is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system.
The detection signal that seed injection locking system is used to control the sign luminous intensity that acoustooptic Q-switching opens, sends according to photodetector transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic, and the detection signal of the sign luminous intensity of sending when photodetector is controlled acoustooptic Q-switching when reaching optimum value and closed; Said optimum value is the maximum or the minimum value of the detection signal of sign luminous intensity.
It is long that said piezoelectric ceramic is used for controlling according to the control signal of seed injection locking system the chamber of said ring resonator.
Preferably, said piezoelectric ceramic and input and output mirror, first speculum or second speculum are bonding.
Preferably, said pulse laser also comprises the 3rd speculum.
Said the 3rd speculum reflexes to photodetector with the light on the optical diffraction of acoustooptic Q-switching.
Preferably, said laser crystal is the laser crystal of profile pump.
Said pumping source provides the energy of pumping to the laser crystal of said profile pump from the side of the laser crystal of said profile pump.
Preferably, said pumping source is semiconductor laser, light-emitting diode or photoflash lamp.
Preferably, said laser crystal is the laser crystal of single end face pump, and said pumping source is first semiconductor laser; The pumping end surface of the laser crystal of said single end face pump faces first speculum.
Said first semiconductor laser is by the rear end of said first speculum, to the pumping end surface emission laser of the laser crystal of said single end face pump.
Said first speculum is the speculum that the two sides all is coated with first anti-reflection film; Wherein, the transmission peak wavelength of said first anti-reflection film is the wavelength of the said first semiconductor laser emitted laser.
Preferably, the laser crystal of said single end face pump is the laser crystal of first single end face pump; Said pulse laser also comprises: the laser crystal of second semiconductor laser, second single end face pump and quartzy polarization apparatus.
The laser crystal of the laser crystal of said second single end face pump and first single end face pump is all on the light path of the ring resonator between first speculum and second speculum; The pumping end surface of the laser crystal of said first single end face pump faces first speculum; The pumping end surface of the laser crystal of said second single end face pump faces second speculum; Said quartzy polarization apparatus is on the light path of the ring resonator between the laser crystal of the laser crystal of first single end face pump and second single end face pump.
Said second semiconductor laser is by the rear end of said second speculum, to the pumping end surface emission laser of the laser crystal of said second single end face pump.
Said second speculum is the speculum that the two sides all is coated with second anti-reflection film; Wherein, the transmission peak wavelength of said second anti-reflection film is the wavelength of the said second semiconductor laser emitted laser.
Preferably, said laser crystal is that the laser crystal of laser crystal and said double-end pumping of double-end pumping is on the light path of the ring resonator between first speculum and second speculum; First pumping end surface of the laser crystal of said double-end pumping faces first speculum; Second pumping end surface of the laser crystal of said double-end pumping faces second speculum; Said pumping source is first semiconductor laser.
Said first semiconductor laser is by the rear end of said first speculum, to first pumping end surface emission laser of the laser crystal of said double-end pumping.
Said pulse laser also comprises: second semiconductor laser.
Said second semiconductor laser is by the rear end of said second speculum, to second pumping end surface emission laser of the laser crystal of said double-end pumping.
Said first speculum is the speculum of the anti-reflection film of the two sides wavelength that all is coated with the said first semiconductor laser emitted laser.
Said second speculum is the speculum of the anti-reflection film of the two sides wavelength that all is coated with the said second semiconductor laser emitted laser.
Preferably, said pulse laser also comprises: collimating lens and condenser lens.
Said collimating lens is used for the said first semiconductor laser emitted laser is collimated.
Said condenser lens is used for the laser behind the said collimating lens collimation is focused on.
Preferably, said pulse laser also comprises: collimating lens and condenser lens.
Said collimating lens is used for the said second semiconductor laser emitted laser is collimated.
Said condenser lens is used for the laser behind the said collimating lens collimation is focused on.
Preferably, said ring resonator is 4 mirror annular chambers; Said ring resonator also comprises the 4th speculum.
The invention provides a kind of method of control impuls laser, said method is used for pulse laser, and said pulse laser comprises: seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator.Said method comprises:
Open seed laser and acoustooptic Q-switching;
Survey the luminous intensity on the optical diffraction of said acoustooptic Q-switching;
Length according to the detection signal control ring resonator that characterizes said luminous intensity makes the detection signal that characterizes luminous intensity reach optimum value; Wherein, said optimum value is the maximum or the minimum value of the detection signal of sign luminous intensity;
When reaching optimum value, the detection signal of sign luminous intensity closes acoustooptic Q-switching.
Can know through technique scheme; The present invention has utilized acoustooptic Q-switching generation of forced diffraction when opening; And when closing, do not produce the mechanism of diffraction, on the acoustooptic Q-switching optical diffraction, carry out resonance signal to survey, because the luminous intensity on the acoustooptic Q-switching optical diffraction can reach 30% of luminous intensity on the light path of ring resonator usually; Therefore, can be prone on the acoustooptic Q-switching optical diffraction, detect resonance signal., the resonance signal that detects closes acoustooptic Q-switching when reaching the most by force or be the most weak; Set up laser pulse this moment; Because acoustooptic Q-switching cuts out, and does not have resonance signal on the acoustooptic Q-switching optical diffraction, therefore can not cause the damage of detector owing to the higher peak power of laser pulse.
Description of drawings
Fig. 1 is the specific embodiment of pulse laser provided by the invention;
Fig. 2 is another specific embodiment of pulse laser provided by the invention;
Fig. 3 is another specific embodiment of pulse laser provided by the invention;
Fig. 4 is another specific embodiment of pulse laser provided by the invention;
Fig. 5 is another specific embodiment of pulse laser provided by the invention;
Fig. 6 is another specific embodiment of pulse laser provided by the invention;
Fig. 7 is another specific embodiment of pulse laser provided by the invention;
Fig. 8 is another specific embodiment of pulse laser provided by the invention;
Fig. 9 is a specific embodiment of the method for control impuls laser provided by the invention.
Embodiment
Acoustooptic Q-switching is an electronic device a kind of commonly used of realizing laser pulse in the pulse laser.Acoustooptic Q-switching is to make through electroacoustic conversion formation ultrasonic wave the variation of modulated media refractive index generating period property incident light to be played the effect of diffraction grid, and make it to take place diffraction loss, the Q value descends, and laser generation can not form.Optical pumping excitation down on it energy level inverted population constantly accumulate and the value of reaching capacity, remove ultrasonic field suddenly at this moment, diffraction effect disappears immediately, the Q value is increased sharply in the chamber, laser generation recovers rapidly, its energy is exported with the giant pulse form.Generation of forced diffraction when having utilized acoustooptic Q-switching to open among the present invention, and diffraction effect disappears immediately when closing, and forms the characteristics of pulse laser, on the optical diffraction of acoustooptic Q-switching, resonance signal is surveyed.
See also Fig. 1; The invention provides a kind of specific embodiment of pulse laser, said pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.Here, seed laser is the laser of single-frequency, and the frequency of seed laser is identical with the frequency of the laser pulse of the final output of said pulse laser.
The laser crystal 103 of profile pump is on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, the laser crystal of profile pump 103 and acoustooptic Q-switching 104 all only need be positioned on the light path of ring resonator and get final product, and particular location is constrained not.
The side of the laser crystal 103 of first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of said profile pump; That is to say that the side of the laser crystal 103 of first semiconductor laser 110 pumping from the side is to the laser crystal 103 emission laser of profile pump.
Here, the laser crystal of pulse laser employing is the laser crystal 103 of profile pump.In other embodiments, the laser crystal that pulse laser adopts also can be the laser crystal of single end face pump or double-end pumping, and then first semiconductor laser provides the direction of the energy of pumping need produce corresponding variation.For example, when the laser crystal that pulse laser adopts is the laser crystal of single end face pump, adopt semiconductor laser or other pumping source that the energy of pumping is provided to the laser crystal of single end face pump from the pumping end surface of the laser crystal of single end face pump.
Here, first semiconductor laser 110 also can be the pumping source of other form, like photoflash lamp, light-emitting diode etc.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching 104, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.In this embodiment; Photodetector 105 is positioned on the optical diffraction of acoustooptic Q-switching; Luminous intensity on the optical diffraction of direct detection acoustooptic Q-switching, and convert the luminous intensity on the optical diffraction of acoustooptic Q-switching into the corresponding signal of telecommunication, this signal of telecommunication is sent to seed injection locking system 106.In other embodiments, consider utilization of space, also can the luminous intensity on the optical diffraction of acoustooptic Q-switching be reflexed to photodetector 105 through speculum or other optical element.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
It is long that said piezoelectric ceramic 102 is used for controlling according to the control signal of seed injection locking system 106 chamber of said ring resonator.
Here, piezoelectric ceramic is bonded on the input and output mirror 107, drive input and output mirror 107 according to the control signal of seed injection locking system 106 and vibrate, thereby the chamber that changes ring resonator is long.And the variation of light frequency on the light path of the chamber of ring resonator long variation causing ring resonator; When light frequency on the light path of ring resonator is identical with seed laser 101 emitted laser frequencies; Light intensity is maximum or minimum on the light path of ring resonator, so the luminous intensity that photodetector 105 is surveyed is same maximum or minimum.Close acoustooptic Q-switching this moment, sets up laser pulse on the ring resonator light path, and through input and output mirror 107 these laser pulses of output.Seed injection locking system 106 can adopt the detection signal of the sign luminous intensity that technology such as Ramp-Fire, Ramp-Hold-Fire, Cavity Dither or Pound-Drever-Hall realize sending according to photodetector 105 to transmit control signal so that the detection signal of said sign luminous intensity is maximum or minimum to piezoelectric ceramic 102.
Piezoelectric ceramic also can be bonded on first speculum 108 or second speculum 109.When being bonded in 107 last times of input and output mirror, in order not block light path, piezoelectric ceramic is required to be hollow.When being bonded in the rear end of first speculum or second speculum, need not consider that then piezoelectric ceramic stops the influence of light path, piezoelectric ceramic can be for hollow or solid.
First speculum and second speculum have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum and second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.
Pulse laser provided by the invention can be applied to technical fields such as Doppler's coherent wind, gas differential absorbing detection laser radar.
Fig. 2 is another specific embodiment of pulse laser provided by the invention, and the difference of this embodiment and embodiment shown in Figure 1 is that among this embodiment, piezoelectric ceramic is bonded in the rear end on first speculum.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 201, profile pump.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 103 of profile pump is on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, the laser crystal of profile pump 103 and acoustooptic Q-switching 104 all only need be positioned on the light path of ring resonator and get final product, and particular location is constrained not.
The side of the laser crystal 103 of first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of said profile pump; That is to say that the side of the laser crystal 103 of first semiconductor laser 110 pumping from the side is to the laser crystal 103 emission laser of profile pump.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching 104, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 201, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 201 is bonded in the rear end of first speculum 108, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 201 can be for hollow or solid.
First speculum and second speculum have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum and second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.
Fig. 3 is another specific embodiment of pulse laser provided by the invention, in this embodiment, and in order to consider that the making full use of of space reflexed to the light on the acoustooptic Q-switching optical diffraction in the photodetector 105 through the 3rd speculum.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109, the 3rd speculum 301 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 103 of profile pump is on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, the laser crystal of profile pump 103 and acoustooptic Q-switching 104 all only need be positioned on the light path of ring resonator and get final product, and particular location is constrained not.
The side of the laser crystal 103 of first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of said profile pump; That is to say that the side of the laser crystal 103 of first semiconductor laser 110 pumping from the side is to the laser crystal 103 emission laser of profile pump.
The 3rd speculum 301 reflexes to photodetector with the light on acoustooptic Q-switching 104 optical diffractions.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd speculum 301 reflections, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 107 is hollow.
First speculum 108 and second speculum 109 have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum 108 and second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.
In the above-described embodiments, laser crystal is the laser crystal of profile pump, introduces the situation of the laser crystal of laser crystal that laser crystal is a single end face pump and double-end pumping below respectively.
See also Fig. 4, the present invention also provides a kind of specific embodiment of pulse laser, and in this embodiment, what laser crystal adopted is the laser crystal of single end face pump.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 403, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109, first semiconductor laser 110, the 3rd speculum 301, collimating lens 401 and the condenser lens 402 of seed laser 101, piezoelectric ceramic 102, single end face pump.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 403 of single end face pump is on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, the laser crystal of single end face pump 403 and acoustooptic Q-switching 104 all only need be positioned on the light path of ring resonator and get final product, and particular location is constrained not.
First semiconductor laser 110 provides the energy of pumping to the laser crystal 403 of said single end face pump from the pumping end surface of the laser crystal 403 of single end face pump; Here; First semiconductor laser 110 from the pumping end surface of the laser crystal 403 of single end face pump over against the rear end of second speculum, along the direction of the pumping end surface of the laser crystal 403 of second speculum to said single end face pump laser crystal 403 emission laser to single end face pump.
The 3rd speculum 301 reflexes to photodetector with the light on acoustooptic Q-switching 104 optical diffractions.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd speculum 301 reflections, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 is used for first semiconductor laser, 110 emitted laser are collimated.The laser that condenser lens 402 is used for behind collimation lens 401 collimations focuses on.
First speculum 108 and second speculum 109 have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum 108 and second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.Second speculum 109 has also been realized first semiconductor laser, 110 emitted laser are seen through to the pumping end surface of the laser crystal 403 of single end face pump except that the total reflection of light path, and therefore, the two sides of second speculum 109 all is coated with first anti-reflection film; Wherein, the transmission peak wavelength of first anti-reflection film is the wavelength of said first semiconductor laser, 110 emitted laser.
Fig. 5 is another specific embodiment of pulse laser provided by the invention, and in this embodiment, what laser crystal adopted is the laser crystal of double-end pumping.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 504, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109, first semiconductor laser 110, the 3rd speculum 301, collimating lens 401, condenser lens 402, second semiconductor laser 501, collimating lens 502 and the condenser lens 503 of seed laser 101, piezoelectric ceramic 102, double-end pumping.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 504 of double-end pumping is on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, 104 need of acoustooptic Q-switching are positioned on the light path of ring resonator and get final product, and particular location is constrained not.The laser crystal 504 of double-end pumping can only be on the light path of the ring resonator between first speculum 108 and second speculum 109.
First semiconductor laser 110 provides the energy of pumping to the laser crystal 504 of said double-end pumping from first pumping end surface of the laser crystal 504 of double-end pumping; Here; First semiconductor laser 110 from first pumping end surface of the laser crystal 504 of double-end pumping over against the rear end of second speculum, along the direction of first pumping end surface of the laser crystal 504 of second speculum to said double-end pumping laser crystal 504 emission laser to double-end pumping.
Second semiconductor laser 501 provides the energy of pumping to the laser crystal 504 of said double-end pumping from second pumping end surface of the laser crystal 504 of double-end pumping; Here; Second semiconductor laser 501 from second pumping end surface of the laser crystal 504 of double-end pumping over against the rear end of first speculum, along the direction of second pumping end surface of the laser crystal 504 of first speculum to said double-end pumping laser crystal 504 emission laser to double-end pumping.
The 3rd speculum 301 reflexes to photodetector 105 with the light on acoustooptic Q-switching 104 optical diffractions.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd speculum 301 reflections, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 is used for first semiconductor laser, 110 emitted laser are collimated.The laser that condenser lens 402 is used for behind collimation lens 401 collimations focuses on.Collimating lens 502 is used for second semiconductor laser, 501 emitted laser are collimated.The laser that condenser lens 503 is used for behind collimation lens 502 collimations focuses on.
First speculum and second speculum have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum and second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.In addition; First speculum 108 is except that the total reflection of light path; Also realized second semiconductor laser, 501 emitted laser are seen through to second pumping end surface of the laser crystal 504 of double-end pumping, therefore, the two sides of first speculum 108 all is coated with second anti-reflection film; Wherein, the transmission peak wavelength of second anti-reflection film is the wavelength of said second semiconductor laser, 501 emitted laser.And second speculum 109 has also been realized first semiconductor laser, 110 emitted laser are seen through to first pumping end surface of the laser crystal 403 of double-end pumping except that the total reflection of light path, and therefore, the two sides of second speculum 109 all is coated with first anti-reflection film; Wherein, the transmission peak wavelength of first anti-reflection film is the wavelength of said first semiconductor laser, 110 emitted laser.
Among the above embodiment, only a laser crystal is carried out pumping,, introduce a kind of situation of simultaneously two laser crystals being carried out pumping below in order to increase the gain of pulse laser.
Fig. 6 is another specific embodiment of pulse laser provided by the invention, in this embodiment, simultaneously two laser crystals is carried out pumping.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 403, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109, first semiconductor laser 110, the 3rd speculum 301, collimating lens 401, condenser lens 402, second semiconductor laser 501, collimating lens 502, the condenser lens 503 of seed laser 101, piezoelectric ceramic 102, single end face pump, the laser crystal 601 and the quartzy polarization apparatus 602 of single end face pump.Wherein, input and output mirror 107, first speculum 108 and second speculum 109 are formed the ring resonator of three mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 403 of single end face pump and the laser crystal 601 of single end face pump are on the light path of the ring resonator between first speculum 108 and second speculum 109, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, 104 need of acoustooptic Q-switching are positioned on the light path of ring resonator and get final product, and particular location is constrained not.The laser crystal 403 of single end face pump and the laser crystal 601 of single end face pump all can only be on the light paths of the ring resonator between first speculum 108 and second speculum 109.
First semiconductor laser 110 provides the energy of pumping to the laser crystal 403 of said single end face pump from the pumping end surface of the laser crystal 403 of single end face pump; Here; First semiconductor laser 110 from the pumping end surface of the laser crystal 403 of single end face pump over against the rear end of second speculum 109, along the direction of the pumping end surface of the laser crystal 403 of second speculum 109 to the said single end face pump laser crystal 403 emission laser to single end face pump.
Second semiconductor laser 501 provides the energy of pumping to the laser crystal 601 of said single end face pump from the pumping end surface of the laser crystal 601 of single end face pump; Here; Second semiconductor laser 501 from the pumping end surface of the laser crystal 601 of single end face pump over against the rear end of first speculum 108, along the direction of the pumping end surface of the laser crystal 601 of first speculum 108 to the said single end face pump laser crystal 601 emission laser to single end face pump.
Quartzy polarization apparatus 603 is on the light path of the ring resonator between the laser crystal 403 of the laser crystal 601 of single end face pump and single end face pump.The thermally induced birefringence of 603 pairs of laser crystals of quartzy polarization apparatus compensates.
The 3rd speculum 301 reflexes to photodetector with the light on the acoustooptic Q-switching optical diffraction.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd speculum 301 reflections, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 107 is hollow.
Collimating lens 401 is used for first semiconductor laser, 110 emitted laser are collimated.The laser that condenser lens 402 is used for behind collimation lens 401 collimations focuses on.Collimating lens 502 is used for second semiconductor laser, 501 emitted laser are collimated.The laser that condenser lens 503 is used for behind collimation lens 502 collimations focuses on.
First speculum and second speculum have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum and second speculum are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.In addition, first speculum 108 has also been realized second semiconductor laser, 501 emitted laser are seen through to the pumping end surface of the laser crystal 504 of single end face pump except that the total reflection of light path, and therefore, the two sides of first speculum 108 all is coated with second anti-reflection film; Wherein, the transmission peak wavelength of second anti-reflection film is the wavelength of said second semiconductor laser, 501 emitted laser.And second speculum 109 has also been realized first semiconductor laser, 110 emitted laser are seen through to the pumping end surface of the laser crystal 403 of single end face pump except that the total reflection of light path, and therefore, the two sides of second speculum 109 all is coated with first anti-reflection film; Wherein, the transmission peak wavelength of first anti-reflection film is the wavelength of said first semiconductor laser, 110 emitted laser.
In the foregoing description, ring resonator is the ring resonator of three mirrors, and in other embodiments, also can adopt the ring resonator of four mirrors or five mirrors, does not influence realization of the present invention.Describe through a specific embodiment below.
See also Fig. 7, the invention provides another specific embodiment of pulse laser, in this embodiment, ring resonator is the resonant cavity of four mirrors.Specific as follows:
Among this embodiment, pulse laser comprises laser crystal 103, acoustooptic Q-switching 104, photodetector 105, seed injection locking system 106, input and output mirror 107, first speculum 108, second speculum 109, the 3rd speculum 301, the 4th speculum 701 and first semiconductor laser 110 of seed laser 101, piezoelectric ceramic 102, profile pump.Wherein, input and output mirror 107, first speculum 108, second speculum 109 and the 4th speculum 701 are formed the ring resonator of four mirrors.
Said seed laser 101 is used for injecting seed laser by input and output mirror 107 to the direction of the light path of ring resonator.
The laser crystal 103 of profile pump is on the light path of the ring resonator between first speculum 108 and the 4th speculum 701, and acoustooptic Q-switching 104 is on the light path of the ring resonator between second speculum 109 and the input and output mirror 107.Here, the laser crystal of profile pump 103 and acoustooptic Q-switching 104 all only need be positioned on the light path of ring resonator and get final product, and particular location is constrained not.
The side of the laser crystal 103 of first semiconductor laser 110 pumping from the side provides the energy of pumping to the laser crystal 103 of said profile pump; That is to say that the side of the laser crystal 103 of first semiconductor laser 110 pumping from the side is to the laser crystal 103 emission laser of profile pump.
The 3rd speculum 301 reflexes to photodetector with the light on the acoustooptic Q-switching optical diffraction.
Said photodetector 105 is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching of the 3rd mirror reflects, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system 106.
The detection signal that seed injection locking system 106 is used to control the sign luminous intensity that acoustooptic Q-switching 104 opens, sends according to photodetector 105 transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic 102, and the detection signal of the sign luminous intensity of sending when photodetector 105 is controlled acoustooptic Q-switching 104 when reaching optimum value and closed.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.
Said piezoelectric ceramic 102 is bonded in the rear end of input and output mirror 107, and the chamber that is used for controlling according to the control signal of seed injection locking system 106 said ring resonator is long.Piezoelectric ceramic 107 is hollow.
First speculum 108 and second speculum 109 have all been realized the total reflection of light path in the resonant cavity in this embodiment; Therefore; First speculum 108 and second speculum 109 are the completely reflecting mirror that is coated with total reflection medium film, and the reflection wavelength of this total reflection medium film is the wavelength of seed laser 101 emitted laser.
Equally; Also can adopt the ring resonator of five mirrors; Concrete structure sees also Fig. 8; With employing shown in Figure 7 the laser of ring resonator of four mirrors compare, difference is that laser shown in Figure 8 adopts the ring resonator of five mirrors, and the ring resonator of five mirrors is made up of input and output mirror 107, first speculum 108, second speculum 109, the 5th speculum 801 and the 6th speculum 802.Concrete implementation and embodiment shown in Figure 7 are similar, so repeat no more.
See also Fig. 9; The present invention also provides a kind of method that realizes controlling laser; Said method can be used for a kind of pulse laser; Said pulse laser can be the pulse laser of Fig. 1 to any embodiment shown in Figure 8, and said pulse laser also can comprise the pulse laser of seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator for other.This method comprises:
S901: open seed laser and acoustooptic Q-switching.Here, the seed laser emitted laser is injected in the annular resonance.Acoustooptic Q-switching is positioned on the light path of ring resonator.
S902: survey the luminous intensity on the optical diffraction of said acoustooptic Q-switching.Can realize surveying the luminous intensity on the optical diffraction of acoustooptic Q-switching through the sensitive detection parts of photodetector or other luminous intensity.
S903: the length according to the detection signal control ring resonator that characterizes said luminous intensity makes the detection signal that characterizes luminous intensity reach optimum value.Here, optimum value is decided by concrete light path, can or characterize the minimum value of the detection signal of luminous intensity for the maximum of the detection signal that characterizes luminous intensity.The detection signal that characterizes said luminous intensity can be for characterizing said luminous intensity current signal or other physical signallings.The length of ring resonator can be regulated through piezoelectric ceramic.Can adopt technology such as Ramp-Fire, Ramp-Hold-Fire, Cavity Dither or Pound-Drever-Hall to realize making the detection signal that characterizes luminous intensity reach optimum value according to the length of the detection signal control ring resonator that characterizes said luminous intensity.
S904: close acoustooptic Q-switching when the detection signal of sign luminous intensity reaches optimum value.The detection signal of the sign luminous intensity that detects is maximum or hour, explain that the frequency of the laser in the resonant cavity is identical with the frequency of seed laser emitted laser, closes acoustooptic Q-switching at this moment, sets up laser pulse on the ring resonator light path.Because acoustooptic Q-switching cuts out, the diffraction effect of acoustooptic Q-switching disappears, and no longer has light signal on the optical diffraction of acoustooptic Q-switching.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (12)
1. pulse laser; It is characterized in that said pulse laser comprises seed laser, piezoelectric ceramic, laser crystal, pumping source, acoustooptic Q-switching, photodetector, seed injection locking system and the ring resonator of being made up of input and output mirror, first speculum and second speculum;
Said seed laser is used for injecting seed laser by the input and output mirror to the direction of the light path of said ring resonator;
Said laser crystal and acoustooptic Q-switching are positioned on the light path of said ring resonator;
Said pumping source provides the energy of pumping to said laser crystal;
Said photodetector is used to survey the luminous intensity on the optical diffraction of acoustooptic Q-switching, and the detection signal that will characterize said luminous intensity is sent to seed injection locking system;
The detection signal that seed injection locking system is used to control the sign luminous intensity that acoustooptic Q-switching opens, sends according to photodetector transmits control signal so that the detection signal of said sign luminous intensity reaches optimum value to piezoelectric ceramic, and the detection signal of the sign luminous intensity of sending when photodetector is controlled acoustooptic Q-switching when reaching optimum value and closed; Said optimum value is the maximum or the minimum value of the detection signal of sign luminous intensity;
It is long that said piezoelectric ceramic is used for controlling according to the control signal of seed injection locking system the chamber of said ring resonator.
2. pulse laser according to claim 1 is characterized in that, said piezoelectric ceramic and input and output mirror, first speculum or second speculum are bonding.
3. pulse laser according to claim 1 is characterized in that said pulse laser also comprises the 3rd speculum;
Said the 3rd speculum reflexes to photodetector with the light on the optical diffraction of acoustooptic Q-switching.
4. pulse laser according to claim 1 is characterized in that, said laser crystal is the laser crystal of profile pump;
Said pumping source provides the energy of pumping to the laser crystal of said profile pump from the side of the laser crystal of said profile pump.
5. pulse laser according to claim 4 is characterized in that, said pumping source is semiconductor laser, light-emitting diode or photoflash lamp.
6. pulse laser according to claim 1 is characterized in that, said laser crystal is the laser crystal of single end face pump, and said pumping source is first semiconductor laser; The pumping end surface of the laser crystal of said single end face pump faces first speculum;
Said first semiconductor laser is by the rear end of said first speculum, to the pumping end surface emission laser of the laser crystal of said single end face pump;
Said first speculum is the speculum that the two sides all is coated with first anti-reflection film; Wherein, the transmission peak wavelength of said first anti-reflection film is the wavelength of the said first semiconductor laser emitted laser.
7. pulse laser according to claim 6 is characterized in that, the laser crystal of said single end face pump is the laser crystal of first single end face pump; Said pulse laser also comprises: the laser crystal of second semiconductor laser, second single end face pump and quartzy polarization apparatus;
The laser crystal of the laser crystal of said second single end face pump and first single end face pump is all on the light path of the ring resonator between first speculum and second speculum; The pumping end surface of the laser crystal of said first single end face pump faces first speculum; The pumping end surface of the laser crystal of said second single end face pump faces second speculum; Said quartzy polarization apparatus is on the light path of the ring resonator between the laser crystal of the laser crystal of first single end face pump and second single end face pump;
Said second semiconductor laser is by the rear end of said second speculum, to the pumping end surface emission laser of the laser crystal of said second single end face pump;
Said second speculum is the speculum that the two sides all is coated with second anti-reflection film; Wherein, the transmission peak wavelength of said second anti-reflection film is the wavelength of the said second semiconductor laser emitted laser.
8. pulse laser according to claim 1 is characterized in that, said laser crystal is that the laser crystal of laser crystal and said double-end pumping of double-end pumping is on the light path of the ring resonator between first speculum and second speculum; First pumping end surface of the laser crystal of said double-end pumping faces first speculum; Second pumping end surface of the laser crystal of said double-end pumping faces second speculum; Said pumping source is first semiconductor laser;
Said first semiconductor laser is by the rear end of said first speculum, to first pumping end surface emission laser of the laser crystal of said double-end pumping;
Said pulse laser also comprises: second semiconductor laser;
Said second semiconductor laser is by the rear end of said second speculum, to second pumping end surface emission laser of the laser crystal of said double-end pumping;
Said first speculum is the speculum of the anti-reflection film of the two sides wavelength that all is coated with the said first semiconductor laser emitted laser;
Said second speculum is the speculum of the anti-reflection film of the two sides wavelength that all is coated with the said second semiconductor laser emitted laser.
9. according to claim 6,7 or 8 described pulse lasers, it is characterized in that said pulse laser also comprises: collimating lens and condenser lens;
Said collimating lens is used for the said first semiconductor laser emitted laser is collimated;
Said condenser lens is used for the laser behind the said collimating lens collimation is focused on.
10. according to claim 7 or 8 described pulse lasers, it is characterized in that said pulse laser also comprises: collimating lens and condenser lens;
Said collimating lens is used for the said second semiconductor laser emitted laser is collimated;
Said condenser lens is used for the laser behind the said collimating lens collimation is focused on.
11. pulse laser according to claim 1 is characterized in that, said ring resonator is 4 mirror annular chambers; Said ring resonator also comprises the 4th speculum.
12. the method for a control impuls laser is characterized in that, said method is used for pulse laser, and said pulse laser comprises: seed laser, laser crystal, pumping source, acoustooptic Q-switching and ring resonator; Said method comprises:
Open seed laser and acoustooptic Q-switching;
Survey the luminous intensity on the optical diffraction of said acoustooptic Q-switching;
Length according to the detection signal control ring resonator that characterizes said luminous intensity makes the detection signal that characterizes luminous intensity reach optimum value; Wherein, said optimum value is the maximum or the minimum value of the detection signal of sign luminous intensity;
When reaching optimum value, the detection signal of sign luminous intensity closes acoustooptic Q-switching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210313972.7A CN102801098B (en) | 2012-08-29 | 2012-08-29 | Pulsed laser and method for controlling same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210313972.7A CN102801098B (en) | 2012-08-29 | 2012-08-29 | Pulsed laser and method for controlling same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102801098A true CN102801098A (en) | 2012-11-28 |
| CN102801098B CN102801098B (en) | 2014-05-21 |
Family
ID=47200119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210313972.7A Active CN102801098B (en) | 2012-08-29 | 2012-08-29 | Pulsed laser and method for controlling same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102801098B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105572653A (en) * | 2016-01-12 | 2016-05-11 | 中国科学院半导体研究所 | Method for protecting photosensitive surface of detector |
| CN108963751A (en) * | 2018-07-18 | 2018-12-07 | 中国电子科技集团公司第四十四研究所 | Injection Locking Semiconductor Lasers |
| CN114336262A (en) * | 2022-03-14 | 2022-04-12 | 北京杏林睿光科技有限公司 | Device and method for predicting laser pulse emission preparation time |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521930A (en) * | 1994-07-19 | 1996-05-28 | Suni; Paul J. M. | Device for injection-seeding, frequency-shifting, and q-switching a laser source |
| CN101697398A (en) * | 2009-10-29 | 2010-04-21 | 哈尔滨工程大学 | Common output mirror thulium and holmium co-doped yttrium lithium fluoride single-frequency pulse laser for master and slave laser purpose |
-
2012
- 2012-08-29 CN CN201210313972.7A patent/CN102801098B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521930A (en) * | 1994-07-19 | 1996-05-28 | Suni; Paul J. M. | Device for injection-seeding, frequency-shifting, and q-switching a laser source |
| CN101697398A (en) * | 2009-10-29 | 2010-04-21 | 哈尔滨工程大学 | Common output mirror thulium and holmium co-doped yttrium lithium fluoride single-frequency pulse laser for master and slave laser purpose |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105572653A (en) * | 2016-01-12 | 2016-05-11 | 中国科学院半导体研究所 | Method for protecting photosensitive surface of detector |
| CN108963751A (en) * | 2018-07-18 | 2018-12-07 | 中国电子科技集团公司第四十四研究所 | Injection Locking Semiconductor Lasers |
| CN108963751B (en) * | 2018-07-18 | 2020-09-01 | 中国电子科技集团公司第四十四研究所 | Injection-locked semiconductor laser |
| CN114336262A (en) * | 2022-03-14 | 2022-04-12 | 北京杏林睿光科技有限公司 | Device and method for predicting laser pulse emission preparation time |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102801098B (en) | 2014-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211655309U (en) | Laser and laser radar including the same | |
| CN106684683B (en) | Continuous and superimposed pulses formula single beam solid state laser | |
| WO1995022186A1 (en) | Passively q-switched picosecond microlaser | |
| CN101592845A (en) | Dual-wavelength tunable inner cavity tera-hertz parametric oscillator and using method thereof | |
| CN1319225C (en) | Encoding apparatus of audio signal, audio disc and disc reproducing apparatus | |
| JP5467629B2 (en) | Photonic fiber trigger laser equipment | |
| KR102235631B1 (en) | Laser Equipment for Outputting Multi-Pulse Width | |
| TW201338319A (en) | Optical amplifying system and pulsed laser with limited energy pulse | |
| CN103022863A (en) | Ring cavity mode locking fiber laser | |
| CN102801098B (en) | Pulsed laser and method for controlling same | |
| CN103500920A (en) | Pulse single-frequency operating 2.09 micron solid laser | |
| US5072135A (en) | Power laser pulse generator | |
| CN104953457A (en) | Device for alternately outputting dual-wavelength Q-switched pulse lasers | |
| DK2147487T3 (en) | PULSING MICROCHIPLASES | |
| CN103368053B (en) | A kind of pure-tone pulse 1645nm solid state laser of LD pumping | |
| CN101276984A (en) | Micro-chip laser with safety laser pulse output to human eye | |
| CN105470793A (en) | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal | |
| CA2416011A1 (en) | Laser-ultrasonic testing system | |
| CN106207738A (en) | Low-repetition-frequency passive Q-adjusted regenerative amplification lamp pump picosecond laser | |
| KR101382443B1 (en) | Apparatus for producing pulse laser using q-switching and mode locking | |
| CN103474872A (en) | Single longitudinal mould Ho:YAP solid laser generator for pulse operation | |
| CN202513439U (en) | Structure capable of increasing repetition frequency of pulse laser | |
| CN103500919A (en) | LD (Laser Disc) pumping pulse single-frequency Tm, Ho:YAP solid laser based on injection locking mode | |
| CN113161856B (en) | 1.6 mu m injection locking solid laser based on bipyramid resonant cavity and generation method | |
| CN104682180A (en) | Optical signal synchronizing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |