CN102540328A - Photonic crystal fiber, THz wave parametric oscillation generating system and method - Google Patents
Photonic crystal fiber, THz wave parametric oscillation generating system and method Download PDFInfo
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- CN102540328A CN102540328A CN201210060082XA CN201210060082A CN102540328A CN 102540328 A CN102540328 A CN 102540328A CN 201210060082X A CN201210060082X A CN 201210060082XA CN 201210060082 A CN201210060082 A CN 201210060082A CN 102540328 A CN102540328 A CN 102540328A
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Abstract
The invention discloses a photonic crystal fiber, a THz wave parametric oscillation generating system and a THz wave parametric oscillation generating method. The photonic crystal fiber comprises an outer cladding, an inner cladding arranged in the outer cladding, an interlayer arranged in the inner cladding and a fiber core arranged in the interlayer, wherein the inner cladding comprises a plurality of polytetrafluoroethylene tubes uniformly distributed on the circumference, the interlayer is a polyethylene tube, and the fiber core has an octagonal structure. The technical problems of poor beam quality, low power, low efficiency and incapability of realizing operation at room temperature in the conventional method for optically generating THz wave are solved; and the THz wave parametric oscillation generating method and the THz wave parametric oscillation generating device based on the octagonal photonic crystal fiber solve the technical problems of low radiant power, complex equipment structure, high cost and poor stability in conventional photo-produced THz wave.
Description
Technical field
The invention belongs to optics terahertz emission technology, be specifically related to a kind of psec terahertz-wave parametric vibration production method and device thereof based on anistree photonic crystal fiber.
Background technology
Terahertz (THz) radiation is commonly referred to as the electromagnetic wave from 0.1～10THz, and its wave band is between microwave and far infrared.On electromagnetic spectrum, the infrared and microwave irradiation technology of THz wave band both sides is very ripe, but the THz technology is but very unbecoming with these mature technologies that are close on the wave band.From seeing in history of THz radiation research; Early stage people mainly are to derive from the strong absorption of atmosphere to the THz ripple to the interest of THz radiation research, so the THz spectral technique mainly is used to study the spectral quality and the heat emission line of the rotation and the vibration of some simple molecules by chemist and astronomer.The simple application that these are early stage; Mainly be because people are easy to be familiar with and observe very distinct and unique character that the THz ripple is had; It can see through various biosomes, dielectric substance and gaseous substance; These media have abundant absorption and chromatic dispersion character at the THz wave band, and the THz signal of analytic sample just can obtain about the material composition in the material and physics, chemistry and biological information through measuring also.
In in the past 20 years, deep change has taken place in the THz technology, and range of application has obtained expansion widely.Along with new material technology provides new more high-power emissive source and the application of sensitive Detection Techniques more; The THz technology has had very big development in more deep physical study and practical application, especially get up with semiconductor, pharmacy, processing, space and national defense industry close association.Some recent new progresses have been expanded THz The Application of Technology prospect more.These new progresses comprise imaging, chemistry and biological detection, the quanta cascade THz laser of property research, the tomography technology of semiconductor material, high temperature superconducting materia, unmarked genetic test, cellular level, utilize the THz ripple to detect to fly molar content
The difference of single base-pair of DNA and to multiparticle electric charge and THz spectrum Study of Interaction.
In a word, the THz technology has many-sided application prospect in fields such as national security, national economy and scientific researches.And the research of THz radiation source is the important step of THz scientific technological advance and application.Therefore, how effectively to produce the miniaturization and the practicability THz radiation source of high power (high-energy), high-level efficiency and steady running at room temperature, wideband adjustable, become THz technology and application research and development key problem.
Optics THz radiation source technology is main path and the important trend that solves this key issue at present.Utilize optics to produce the THz wave technology at present and mainly adopt several methods such as photoconductivity switching, optical rectification, optical difference frequency.One, photoconductive method is processed the dipole antenna electrode structure at photoconductive semiconductor material surface depositing metal exactly; With the ultra-short pulse laser irradiation semiconductor material of photon energy greater than the semiconductor energy gap; Make and produce electron-hole pair in the semiconductor material; Be biased the transient state that produces charge carrier in the electric field outside and transport, the variation of this true, time dependent transient state photocurrent just can be launched the THz electromagnetic radiation.Two, optical rectification effect is to utilize femto-second laser pulse and nonlinear medium (like ZnTe) to interact and generation low frequency electric polarization field, and this electric polarization field gives off the THz electromagnetic wave at plane of crystal.Three, optical difference frequency generation THz ripple is two bundle continuous wave difference frequency (ω in nonlinear crystal
THz=ω
Pump light-ω
Flashlight) the relevant THz radiation of generation.At present, optics produces the method for THz wave technology, exists output beam quality poor, and mostly the THz ripple of generation is from crystal on side face output, is difficult to collect and utilize, and output power is low, the shortcoming that conversion efficiency is low.
Summary of the invention
To produce the method beam quality of THz ripple poor in order to solve existing optics; Power is low, efficient is low, can not realize the technical matters that at room temperature turns round; The present invention provides a kind of THz wave parameter vibration production method and device thereof based on anistree photonic crystal fiber, and existing photoproduction THz wave radiation power is low, device structure is complicated, cost is higher and the technical matters of less stable to solve.
Technical solution of the present invention is following:
A kind of anistree photonic crystal fiber; Its special character is: comprise surrounding layer, be arranged on the interior inner cladding of surrounding layer, be arranged on the interlayer in the inner cladding and be arranged on the fibre core in the interlayer; Said inner cladding comprises the polyfluortetraethylene pipe of a plurality of circumference uniform distributions; Said interlayer is a polyethylene pipe, and said fibre core is anistree structure.
The caliber of above-mentioned polyfluortetraethylene pipe is 0.8mm, and said fibre core comprises eight layer of air rings, and every layer of air ring becomes anistree shape airport to constitute by a plurality of compact arrangement; Near interlayer is outermost layer; The airport diameter of outermost air ring is d2=0.52 μ m, and the airport diameter of innermost layer air ring is d1=0.24 μ m, and the spacing between the close air ring is Λ 1=0.85 μ m; Spacing between the airport in the same air ring is Λ 2, Λ 2=0.765 Λ 1.
THz ripple based on anistree photonic crystal fiber produces system; Its special character is: comprise the resonator cavity of pumping source, optical parametric oscillator, anistree photonic crystal fiber and spectrometer; The resonator cavity of said optical parametric oscillator comprises the first level crossing M and the second level crossing M '; Said anistree photonic crystal fiber is arranged between a level crossing M and the second level crossing M '; The pump light of said pumping source is incident on first level crossing (M), and said second level crossing is through spectrometer output THz ripple
Said anistree photonic crystal fiber comprises surrounding layer, is arranged on the inner cladding of surrounding layer inner circumferential side, is arranged on the inner cladding intraformational bed and is arranged on the fibre core in the interlayer; Said inner cladding comprises the polyfluortetraethylene pipe of the even compact arrangement of a plurality of circumference; Said interlayer is a polyethylene pipe, and said fibre core is anistree structure.
Above-mentioned pumping source comprises fiber laser, Erbium-Doped Fiber Amplifier (EDFA) EDFA, completely reflecting mirror M1, the first collimation lens L1, half-wave plate P, Polarization Controller PC, the first silver mirror M2 and the second silver mirror M3 that sets gradually according to light path; Said completely reflecting mirror M1 becomes 45 ° of angles with the incident light of Erbium-Doped Fiber Amplifier (EDFA) EDFA, on emergent light vertical incidence to the first level crossing M of the said second silver mirror M3.
The resonator cavity of above-mentioned optical parametric oscillator also comprises the second collimation lens L2 and the 3rd collimation lens L3; Said second collimation lens L2 and the 3rd collimation lens L3 all are arranged between the first level crossing M and the second level crossing M ', and said anistree photonic crystal fiber is arranged between the second collimation lens L2 and the 3rd collimation lens L3.
Also be provided with off-axis paraboloidal mirror M4 and the 4th collimation lens L4 between above-mentioned second level crossing M ' and the spectrometer; The emergent light of said second level crossing is incident to off-axis paraboloidal mirror, and said emergent light from axle parabolic mirror M4 is incident to spectrometer through the 4th collimation lens.
The above-mentioned first level crossing M is coated with 1550nm anti-reflection film T＞97%, 700～800nm high-reflecting film R＞98% and 7～8THz high-reflecting film R＞98%, the second level crossing M ' and is coated with 700～800nm high-reflecting film R＞70% and 7～8THz high transmittance film R＜10%.
Be coated with gold on above-mentioned the 4th collimation lens.
THz ripple production method based on anistree photonic crystal fiber; Its special character is: may further comprise the steps: 1] fiber laser send pump light after Erbium-Doped Fiber Amplifier (EDFA) EDFA amplifies through 45 ° of total reflective mirror M1 reflections; Again behind the first collimation lens L1; Through half-wave plate P and Polarization Controller PC, change the pumping light output of vertical direction polarization into;
2] pumping light of vertical direction polarization through the first silver mirror M2 and the second silver mirror M3 after, get into the resonator cavity of the optical parametric oscillator of forming by the first level crossing M and the second level crossing M '; In the resonator cavity of optical parametric oscillator, be coupled into anistree photonic crystal fiber (O-PCF) through the second collimation lens L2; The pumping light of vertical direction polarization is given flashlight with energy delivery in anistree photonic crystal fiber, and dump energy is together exported as ideler frequency photon and flashlight; Ideler frequency photon and flashlight input to the second level crossing M ' through the 3rd collimation lens L3;
3] transmitted light through the second level crossing M ' is incident to from axle parabolic mirror M4, and is gone into to inject spectrometer after the 4th collimation lens L4 focussed collimated;
4] spectrometer output THz ripple.
The advantage that the present invention had:
1, the present invention adopts anistree photonic crystal fiber, has high non-linearity, through anistree photonic crystal fiber pump photon with energy delivery give the remaining simultaneously energy of signal photon as ideler frequency photon radiation come out; And ideler frequency light is exactly the THz ripple that needs output; Because the second level crossing M ' passes through ideler frequency light is high, and is high anti-for flashlight, thereby the needed photon of THz ripple is kept apart; Produce the THz ripple, have high power, high-quality.
2, the anistree photonic crystal fiber of the present invention is because particular structural has many good qualities it; For example have high non-linearity (than non-linear big 1 or 2 one magnitude of traditional single-mode fiber), controlled chromatic dispersion (this zero-dispersion wavelength place that makes that photonic crystal fiber can 1.55 microns has only very little chromatic dispersion gradient), low-loss (the communication wavelength place is less than 0.06dB/km); These advantages can improve the conversion efficiency of THz ripple significantly; Realized that effectively power is high, simple in structure, assembling easily; Volume is little, the terahertz emission source that cost is low.Existing experiment shows that the teflon tubular construction of anistree photonic crystal fiber inner cladding can hold onto the THz ripple fully.
3, the present invention's THz ripple time domain pulse diagram shown in Figure 3 can be found out, native system stable performance, THz output power are far above the performance index of similar products at home and abroad.The high non-linearity of anistree photonic crystal fiber, low chromatic dispersion and low-loss characteristic have significantly improved the conversion efficiency of THz.
Description of drawings
Fig. 1 is the anistree photonic crystals optical fiber structure figure of the present invention;
Fig. 2 is a structure principle chart of the present invention;
Fig. 3 is the THz ripple time domain pulse diagram that the present invention produced;
Wherein drawing reference numeral is: 1-surrounding layer, 2-inner cladding, 3-interlayer, 4-fibre core, 5-airport; The EDFA-Erbium-Doped Fiber Amplifier (EDFA), M1-total reflective mirror, L1-first collimation lens, P-half-wave plate, PC-Polarization Controller; M2-first silver mirror, M3-second silver mirror, M first level crossing, M '-second level crossing, L2-second collimation lens; The anistree photonic crystal fiber of O-PCF-, L3-the 3rd collimation lens, M4-=is from axle parabolic mirror, L4-the 4th collimation lens.
Embodiment
The present invention is based on the psec THz wave parametric oscillator and the device thereof of anistree photonic crystal fiber.The four-wave mixing effect takes place in pump light and flashlight in photonic crystal fiber, produce the radiation output of THz frequency range.The flashlight that satisfies the collinear phase matching condition vibrates in parametric oscillator.
Pumping source is the picosecond pumping source.
Four-wave mixing in anistree photonic crystal fiber is the degeneration four-wave mixing process, be pump photon with energy delivery give the remaining simultaneously energy of signal photon as ideler frequency photon radiation come out.The ideler frequency light here is exactly the THz ripple that needs output.
So that being set, 45 ° of total reflective mirrors are advisable between Erbium-Doped Fiber Amplifier (EDFA) EDFA and the lens L1.
So that being set, silver mirror M2 and silver mirror M3 that pumping light is reflexed to M be advisable between collimation lens L1 and the level crossing M.
The attenuator of being made up of half-wave plate P and Polarization Controller PC is controlled and selected suitable pump light pulse energy and control output pump light is vertical polarization.
The THz radiated wave is from the reflection of axle parabolic mirror with focus on through gold-plated.
The parametric reasonance chamber first level crossing M passes through pump light is high, and is high anti-to flashlight and ideler frequency light; The second level crossing M ' passes through ideler frequency light is high, and is high anti-for the flashlight that satisfies collinear phase matching.
A kind of psec THz wave parametric oscillator and device thereof based on anistree photonic crystal fiber; Comprise the resonator cavity of forming optical parametric oscillator by level crossing M and M ', the anistree photonic crystal fiber O-PCF that its special character is to be arranged at the generation four-wave mixing effect in the resonator cavity and produces THz ideler frequency light.
What the pump light among the present invention adopted is the ultrashort pulse of the fiber laser output of ps level: repetition frequency is 500MHz, pulse width 12ps, centre wavelength 1550nm.
Photonic crystal fiber adopts a kind of anistree photonic crystal fiber through particular design, and length is 6.25cm.Referring to Fig. 1; 1 comprises surrounding layer, is arranged on the interior inner cladding of surrounding layer, is arranged on the interlayer in the inner cladding and is arranged on the fibre core in the interlayer; Said inner cladding comprises the polyfluortetraethylene pipe of a plurality of circumference uniform distributions, and said interlayer is a polyethylene pipe, and said fibre core is anistree structure.The caliber of polyfluortetraethylene pipe is 0.8mm, and fibre core comprises eight layer of air rings, and every layer of air ring becomes anistree shape airport to constitute by a plurality of compact arrangement; Near interlayer is outermost layer; The airport diameter of outermost air ring is d2=0.52 μ m, and the airport diameter of innermost layer air ring is d1=0.24 μ m, and the spacing between the close air ring is Λ 1=0.85 μ m; Spacing between the airport in the same air ring is Λ 2, Λ 2=0.765 Λ 1.It is octagon that anistree structure or anise are shaped as the cross section.
Referring to Fig. 2, the psec THz wave parametric oscillator device that the present invention is based on anistree photonic crystal fiber is following:
(1) pump light is through Erbium-Doped Fiber Amplifier (EDFA) EDFA, and to be amplified to peak power be 2kW; Again through 45 ° of completely reflecting mirror M1 reflections.
(2) through the reflected light of completely reflecting mirror, be the collimation lens L1 collimation of 50mm through focal length, the attenuator of forming through half-wave plate P and Polarization Controller PC is then controlled and selected suitable pump light pulse energy and control output pump light is vertical polarization.Reflex on the level crossing M that is coated with 1550nm anti-reflection film (T＞97%), 700～800nm high-reflecting film (R＞98%), 7～8THz high-reflecting film (R＞98%) through silver mirror M2 and silver mirror M3 again.Through focal length is that the optical nonlinearity coefficient that the lens L2 of 50mm is coupled into 6.25cm is 86.5W
-1Km
-1Anistree photonic crystal fiber in.
(3) adopt the resonator cavity of the optical parametric oscillator that the anistree photonic crystal fiber O-PCF of high non-linearity builds to form by level crossing M and M '; Wherein the M mirror is coated with 1550nm anti-reflection film (T＞97%), 700～800nm high-reflecting film (R＞98%), 7～8THz high-reflecting film (R＞98%), and M ' is coated with 700～800nm high-reflecting film (R＞70%), 7～8THz high transmittance film (R＜10%).
(4) because the repetition frequency of pump pulse is 500MHz, so be 30cm through the chamber length of calculating parametric reasonance chamber, back.When the position of level crossing M and M ', lens L2 and L3 and O-PCF is set, at first to adjust distance between them to satisfy focal length and steady chamber condition, then the position through the meticulous adjustment of translation stage M '.When synchronous pumping condition is met, refinement experiment is regulated and realized parametric oscillation, the four-wave mixing effect takes place in pumping light and flashlight in the anistree photonic crystal fiber of high non-linearity, and the radiation that obtains the Terahertz frequency range is exported.By gold-plated off-axis paraboloidal mirror M4 collimation and focusing THz ripple, recording output frequency by spectrometer is the THz ripple of 2.55W in the peak power of 7.07-7.74THz continuously adjustable simultaneously.
Claims (9)
1. anistree photonic crystal fiber; Comprise surrounding layer, be arranged on the interior inner cladding of surrounding layer, be arranged on the interlayer in the inner cladding and be arranged on the fibre core in the interlayer; Said inner cladding comprises the polyfluortetraethylene pipe of a plurality of circumference uniform distributions; Said interlayer is a polyethylene pipe, and said fibre core is anistree structure.
2. anistree photonic crystal fiber according to claim 1 is characterized in that:
The caliber of said polyfluortetraethylene pipe is 0.8mm, and said fibre core comprises eight layer of air rings, and every layer of air ring becomes anistree shape airport to constitute by a plurality of compact arrangement; Near interlayer is outermost layer; The airport diameter of outermost air ring is d2=0.52 μ m, and the airport diameter of innermost layer air ring is d1=0.24 μ m, and the spacing between the close air ring is Λ 1=0.85 μ m; Spacing between the airport in the same air ring is Λ 2, Λ 2=0.765 Λ 1.
3. produce system based on the described THz ripple of claim 1 based on anistree photonic crystal fiber; It is characterized in that: comprise the resonator cavity of pumping source, optical parametric oscillator, anistree photonic crystal fiber and spectrometer; The resonator cavity of said optical parametric oscillator comprises first level crossing (M) and second level crossing (M '); Said anistree photonic crystal fiber is arranged between a level crossing (M) and second level crossing (M '); The pump light of said pumping source is incident on first level crossing (M), and said second level crossing is through spectrometer output THz ripple
Said anistree photonic crystal fiber comprises surrounding layer, is arranged on the inner cladding of surrounding layer inner circumferential side, is arranged on the inner cladding intraformational bed and is arranged on the fibre core in the interlayer; Said inner cladding comprises the polyfluortetraethylene pipe of the even compact arrangement of a plurality of circumference; Said interlayer is a polyethylene pipe, and said fibre core is anistree structure.
4. the THz ripple based on anistree photonic crystal fiber according to claim 1 produces system; It is characterized in that: said pumping source comprises fiber laser, Erbium-Doped Fiber Amplifier (EDFA) (EDFA), completely reflecting mirror (M1), first collimation lens (L1), half-wave plate (P), Polarization Controller (PC), first silver mirror (M2) and second silver mirror (M3) that sets gradually according to light path; Said completely reflecting mirror (M1) becomes 45 ° of angles with the incident light of Erbium-Doped Fiber Amplifier (EDFA) (EDFA), on emergent light vertical incidence to the first level crossing (M) of said second silver mirror (M3).
5. produce system according to claim 3 or 4 described THz ripples based on anistree photonic crystal fiber; It is characterized in that: the resonator cavity of said optical parametric oscillator also comprises second collimation lens (L2) and the 3rd collimation lens (L3); Said second collimation lens (L2) and the 3rd collimation lens (L3) all are arranged between first level crossing (M) and second level crossing (M '), and said anistree photonic crystal fiber is arranged between second collimation lens (L2) and the 3rd collimation lens (L3).
6. the THz ripple based on anistree photonic crystal fiber according to claim 5 produces system; It is characterized in that: also be provided with off-axis paraboloidal mirror (M4) and the 4th collimation lens (L4) between said second level crossing (M ') and the spectrometer; The emergent light of said second level crossing is incident to off-axis paraboloidal mirror, and said emergent light from axle parabolic mirror (M4) is incident to spectrometer through the 4th collimation lens.
7. the THz ripple based on anistree photonic crystal fiber according to claim 6 produces system; It is characterized in that: said first level crossing (M) is coated with 1550nm anti-reflection film T＞97%, 700～800nm high-reflecting film R＞98% and 7～8THz high-reflecting film R＞98%, the second level crossing (M ') and is coated with 700～800nm high-reflecting film R＞70% and 7～8THz high transmittance film R＜10%.
8. the THz ripple based on anistree photonic crystal fiber according to claim 7 produces system, it is characterized in that: be coated with gold on said the 4th collimation lens.
9. the THz ripple production method based on anistree photonic crystal fiber according to claim 1 is characterized in that: may further comprise the steps:
1] fiber laser send pump light after Erbium-Doped Fiber Amplifier (EDFA) EDFA amplifies through 45 ° of total reflective mirrors (M1) reflection, through first collimation lens (L1) after, through half-wave plate (P) and Polarization Controller (PC), the pumping light that changes the vertical direction polarization into is exported again;
2] pumping light of vertical direction polarization through first silver mirror (M2) and second silver mirror (M3) after, get into the resonator cavity of the optical parametric oscillator of forming by the first level crossing M and second level crossing (M '); The pumping light that in the resonator cavity of optical parametric oscillator, is coupled into anistree photonic crystal fiber (O-PCF) vertical direction polarization through second collimation lens (L2) is given flashlight with energy delivery in anistree photonic crystal fiber, and dump energy is together exported as ideler frequency photon and flashlight; Ideler frequency photon and flashlight input to second level crossing (M ') through the 3rd collimation lens (L3);
3] transmitted light through second level crossing (M ') is incident to from axle parabolic mirror (M4), and is gone into to inject spectrometer after the 4th collimation lens (L4) focussed collimated;
4] spectrometer output THz ripple.
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Cited By (7)
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| CN102983481A (en) * | 2012-11-28 | 2013-03-20 | 山东海富光子科技股份有限公司 | Terahertz parametric oscillator using fiber laser as pump |
| CN105277513A (en) * | 2015-11-05 | 2016-01-27 | 中国计量学院 | Surface plasmon resonance refraction index sensor based on optical fiber micro-rings |
| CN108598847A (en) * | 2018-04-24 | 2018-09-28 | 电子科技大学 | A kind of adjustable photonic crystal resonant cavity of quality factor |
| CN111736256A (en) * | 2020-07-23 | 2020-10-02 | 西安邮电大学 | 2-5THz broadband hexagonal porous fiber core ultrahigh birefringence terahertz optical fiber |
| CN112432655A (en) * | 2020-11-27 | 2021-03-02 | 东北大学 | Optical fiber sensing system based on free-form surface off-axis reflection and measuring method |
| CN113721404A (en) * | 2021-08-12 | 2021-11-30 | 天津大学 | Terahertz source based on suspended core anti-resonance optical fiber parameter four-wave frequency mixing |
| CN113839291A (en) * | 2021-08-24 | 2021-12-24 | 北京遥感设备研究所 | Terahertz radiation source based on non-periodically polarized lithium niobate crystal and acquisition method |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102983481A (en) * | 2012-11-28 | 2013-03-20 | 山东海富光子科技股份有限公司 | Terahertz parametric oscillator using fiber laser as pump |
| CN105277513A (en) * | 2015-11-05 | 2016-01-27 | 中国计量学院 | Surface plasmon resonance refraction index sensor based on optical fiber micro-rings |
| CN105277513B (en) * | 2015-11-05 | 2023-08-29 | 中国计量大学 | Surface plasma resonance refractive index sensor based on optical fiber micro-ring |
| CN108598847A (en) * | 2018-04-24 | 2018-09-28 | 电子科技大学 | A kind of adjustable photonic crystal resonant cavity of quality factor |
| CN111736256A (en) * | 2020-07-23 | 2020-10-02 | 西安邮电大学 | 2-5THz broadband hexagonal porous fiber core ultrahigh birefringence terahertz optical fiber |
| CN111736256B (en) * | 2020-07-23 | 2022-05-20 | 西安邮电大学 | 2-5THz broadband hexagonal porous fiber core ultrahigh birefringence terahertz optical fiber |
| CN112432655A (en) * | 2020-11-27 | 2021-03-02 | 东北大学 | Optical fiber sensing system based on free-form surface off-axis reflection and measuring method |
| CN112432655B (en) * | 2020-11-27 | 2022-05-20 | 东北大学 | Optical fiber sensing system based on free-form surface off-axis reflection and measuring method |
| CN113721404A (en) * | 2021-08-12 | 2021-11-30 | 天津大学 | Terahertz source based on suspended core anti-resonance optical fiber parameter four-wave frequency mixing |
| CN113839291A (en) * | 2021-08-24 | 2021-12-24 | 北京遥感设备研究所 | Terahertz radiation source based on non-periodically polarized lithium niobate crystal and acquisition method |
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Application publication date: 20120704 |