CN102507978B - Embedded highly-sensitive micro-accelerometer based on e index semiconductor device - Google Patents
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- CN102507978B CN102507978B CN201110299758.6A CN201110299758A CN102507978B CN 102507978 B CN102507978 B CN 102507978B CN 201110299758 A CN201110299758 A CN 201110299758A CN 102507978 B CN102507978 B CN 102507978B
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Abstract
The invention relates to a micro-accelerometer and in particular relates to an embedded highly-sensitive micro-accelerometer based on an e index semiconductor device. According to the invention, the problems that the existing micro-accelerometer is low in sensitivity and cannot meet the measurement requirements are solved. The embedded highly-sensitive micro-accelerometer based on the e index semiconductor device comprises a Si-base epitaxial 2-micrometer GaAs substrate, the e index semiconductor device, a mass block, a detection beam and a control hole. The embedded highly-sensitive micro-accelerometer provided by the invention is manufactured by a manufacturing method comprising the following steps of: preparing the e index semiconductor device: etching the control hole; carrying out deep groove etching on the back side of the mass block; carrying out ICP (Inductively Coupled Plasma) etching on the control hole from the back side of a substrate until the substrate is penetrated; continuously carrying out the ICP etching on the back side of the substrate to form the detection beam, and finally releasing the mass block so as to form a complete micro-accelerometer structure. The micro-accelerometer provided by the invention is high in sensitivity, effectively utilizes the mechanical-electrical coupling and conversion mechanisms of the e index semiconductor device, and can be widely applied to acceleration measurement.
Description
Technical field
The present invention relates to micro-acceleration gauge, be specially a kind of embedded high-sensitivity micro-acceleration gauge based on e index semiconductor device.
Background technology
The detection mode that existing micro-acceleration gauge uses mostly is pressure resistance type detection mode, its ultimate principle is the piezoresistive effect principle based on doped polycrystalline silicon, the advantage of silicon piezoresistance type has that volume is little, wide frequency range, broad quantum, direct voltage output signal, do not need complicated circuit, cheap, reproducible etc., but its shortcoming also greatly limit the application of silicon piezoresistance type accelerometer: resistivity is comparatively large to the dependence of temperature, and diminishes rapidly with the rising of temperature; The voltage dependent resistor (VDR) consistance not easily accurately controlling due to doping content and doping size and cause is poor.The resistivity of silicon pressure sensitive is to the dependence of temperature greatly mainly because silicon voltage dependent resistor (VDR) is by highly doped making, and carrier concentration height temperature influence is large, so the sensitivity impact of temperature on silicon voltage dependent resistor (VDR) is very large.Above-mentioned shortcoming limits the application of silicon minute-pressure resistance accelerometer on high sensor.
E index semiconductor device is a kind of novel semiconductor devices set up based on remodulates doped structure grown up the beginning of the eighties in last century.The I-V characteristic of e index semiconductor device is e index relation, this characteristic relation is to the various extraneous parameter that carrier transport properties (as mobility) can be caused to change, response as the change of optics, calorifics, mechanical quantity is extremely sensitive, therefore, it is possible to realize the highly sensitive detection of external parameter on suitable working point.If be embedded into by e index semiconductor device in micro-nano physical construction, then should be able to realize the highly sensitive detection to mechanical quantity and change thereof, no matter this is in relevant traditional sensors or newborn sensor, all will have important application.In recent years, the research of this aspect causes to be paid close attention in the world widely, and the research abroad based on the micro-nano mechanical pick-up device of e index semiconductor device has had relevant report, has shown its high-sensitivity characteristic.E index semiconductor device adopts remodulates doped structure, at wide band gap semiconducter side doping donor impurity, undopes in heterojunction narrow band gap side, and such donor impurity ionization produces electronics and positively charged donor impurity center.The wide band gap semiconducter that e index semiconductor device uses N-shaped to adulterate usually and narrow bandgap semiconductor material make, its advantage is that the fermi level position of heterojunction both sides semiconductor material is different, electronics can be made to transfer to lower low bandgap material side from the wide bandgap material side that Fermi level is higher, alms giver's ionized impurity in raceway groove is separated with Cyberspace, to form two-dimensional electron gas.Make to form quantum well in channel layer by extra electric field simultaneously, due to the de Broglie wave wavelength of electronics and the width comparable of quantum well, therefore perpendicular to energy generation quantization on the direction of heterojunction boundary, two-dimensional electron gas motion in the direction in which loses degree of freedom.The electron mobility of two-dimensional electron gas, far above the electron mobility of semiconductor material, by growing undoped separation layer between channel layer and doped layer, can further improve its electron mobility.Under low temperature environment, the electrons transport property of two-dimensional electron gas is more superior.Because e index semiconductor device make use of quantum size effect, it upwards utilizes the band-edge energy difference of heterojunction to carry out effectively limiting to electron motion at one-dimensional square, make the quantization of energy of electronics on its lengthwise movement direction, define the two-dimensional electron gas of high concentration.When channel part material receives effect of stress, semiconductor material band structure there is corresponding change, and then cause the change to electronics restriction, had influence on two-dimensional electron gas in raceway groove, and then made strain potential there occurs change.The high sensitivity micro-acceleration gauge utilizing this principle to be developed to combine with HEMT, the piezoresistance coefficient of its HEMT is 3 orders of magnitude of traditional silicon pressure resistance type, but along with measuring the raising required, existing HEMT micro-acceleration gauge cannot meet the demands.
Summary of the invention
In order to solve, existing micro-acceleration gauge sensitivity is low cannot meet the problem measured and require in the present invention, provides a kind of embedded high-sensitivity micro-acceleration gauge based on e index semiconductor device.
The present invention adopts following technical scheme to realize: based on the embedded high-sensitivity micro-acceleration gauge of e index semiconductor device, comprise Si base extension 2umGaAs substrate, e index semiconductor device, mass, detection beam and control punch; It is obtained by the manufacture method comprised the steps:
(1), the preparation of e index semiconductor device:
Step 1: check the surfaceness of Si base extension 2umGaAs substrate and measure its resistivity, mobility electrical parameter; Under ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate, grow HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below successively, form RTT membraneous material;
Table 1
Step 2, the surface clean of RTT membraneous material is totally measured its resistivity afterwards, mobility electrical parameter makes it to be less than an order of magnitude (order of magnitude is 10 times) with the resistivity of Si base extension 2umGaAs substrate, the ratio of mobility electrical parameter measurement result in previous step; Obtain substrate;
Step 3, on substrate, be coated with one deck photoresist, etching RTT membraneous material, forms RTT mesa structure;
Step 4, on RTT table top, be coated with one deck photoresist, etching RTD membraneous material, forms RTD table top and HEMT mesa structure;
Step 5, in the n-GaAs cap layers of RTD table top and the n-GaAs cap layers of HEMT side table top, evaporation deposition a layer thickness is
with arbitrary proportion mixing metallic combination Au-Ge-Ni; Continue to cover a layer thickness and be
metal A u; At 460 DEG C of-560 DEG C of temperature, after 30s alloying, form ohmic contact layer;
Step 6, on HEMT table top, be coated with one deck photoresist, etching forms N
+groove, continues etching and forms grid groove, thus obtain double recess;
Step 7, the metallic combination Ti-Pd-Au that deposit one deck mixes with arbitrary proportion on grid groove, continuing evaporation deposition a layer thickness is
metal A u, form Schottky contacts grid;
Step 8, in double recess, PECVD (plasma enhanced chemical vapor deposition method) deposit a layer thickness is utilized to be
si
3n
4passivation layer thus by Schottky contacts barrier from; Obtain e index semiconductor device;
(2) on substrate, be coated with one deck photoresist to protect e index semiconductor device, utilize ICP (sense coupling) lithographic technique to etch control punch in Si base extension 2umGaAs substrate face, etching depth is the thickness (the existing gyroscope that the thickness detecting beam is known to the skilled person detecting the thickness of beam) detecting beam;
(3), to substrate front protect, substrate back is thinning, and deep etching is carried out at the mass back side;
(4), from substrate back ICP etch control punch until penetrate, continue ICP and etch substrate back formation desired thickness and there is flexible detection beam, finally discharge mass, form complete micro-acceleration gauge structure.
During use, micro-acceleration gauge of the present invention is under the effect of external force, mass can produce skew on sensitive direction, detection girder construction is made to produce deformation, and then make to produce STRESS VARIATION in the e index semiconductor device channel layer on sensor construction, the band structure generation respective change of semiconductor material, and then cause the restriction of two-dimensional electron gas to electronics to change, have influence on the two-dimensional electron gas in channel layer, finally can be reflected to the I-V characteristic variations of e index semiconductor device, utilizing suitable peripheral circuit this change to be converted to can measuring-signal, as exported with forms such as voltage signals, demarcate through signal testing and can obtain sensor output signal and by the relation between measuring acceleration, i.e. stress-electric coupling, conversion characteristic, thus measure extraneous acceleration signal.
Following test experiments has been carried out respectively for micro-acceleration gauge of the present invention and e index semiconductor device thereof:
1, semiconductor parameter specificity analysis instrument Agilent 4156C is utilized under different grid voltage and different temperatures, to carry out semiconductor parametric test experiment to the e index semiconductor device on micro-acceleration gauge of the present invention respectively, as shown in Figure 9 and Figure 10, the I-V family curve of e index semiconductor device can be obtained.Test result shows, electric current faint reduction with the rising of temperature of e index semiconductor device, the e index semiconductor device on micro-acceleration gauge of the present invention is functional.
2, semiconductor parameter specificity analysis instrument Agilent 4156C is utilized to carry out semiconductor parameter contrast test to the HEMT on the e index semiconductor device on micro-acceleration gauge of the present invention and existing HEMT micro-acceleration gauge, as is illustrated by figs. 11 and 12, the two output characteristic curve and transfer characteristic curve comparison diagram is obtained.Test result shows, under same test condition, the I-V family curve of the e index semiconductor device on micro-acceleration gauge of the present invention than the I-V family curve of the HEMT on existing HEMT micro-acceleration gauge there occurs very large on move, saturation region change is more obvious, and the former transfer characteristic curve slope is also obviously greater than the latter, therefore the present invention more existing HEMT micro-acceleration gauge has higher sensitivity.
3, carry out static state pressurization experiment to micro-acceleration gauge of the present invention, the output characteristic curve before and after pressurization as shown in figure 13.As can be seen from the figure, after pressurization, I-V family curve there occurs and moves, and this embodies particularly evident in saturation region.Figure 14 is the output situation of micro-acceleration gauge of the present invention before and after static pressurization, and when using probe to apply external force to mass, I-V family curve offsets; And when after release mass, curve returns to the position before pressurization too, this just well demonstrates the stress-electric coupling characteristic of the e index semiconductor device microstructure on micro-acceleration gauge of the present invention and it is good restorative.
4, the experiment of piezoresistance coefficient gravity is carried out to micro-acceleration gauge of the present invention: as shown in figure 15 for semiconductor parameter specificity analysis instrument Agilent 4156C test micro-acceleration gauge of the present invention detection side upwards apply power be 0g and-1g time e index semiconductor device I-V family curve comparison diagram, stress simulation analysis is carried out by Ansys simulation software, maximum stress on estimation sensor beam, according to following piezoresistance coefficient formulae discovery:
Wherein: σ is stress, electric current when I is agravic, Δ I is current variation value.
High Precision Multimeter is utilized to test the change of resistance under-1g and 0g, maximum piezoresistance coefficient four orders of magnitude higher than the pressure-sensitive coefficient of traditional silicon material voltage dependent resistor (VDR) of the e index semiconductor device on known micro-acceleration gauge of the present invention, exceed an order of magnitude than the maximum piezoresistance coefficient of the HEMT on existing HEMT micro-acceleration gauge, illustrate that the present invention has higher sensitivity than existing HEMT micro-acceleration gauge.
5, sensory characteristic experiment is carried out to micro-acceleration gauge: 1) adopt experimental system (experiment condition: V as shown in figure 16
d=2V, V
g=0.6V, f=600Hz, acceleration 20g, enlargement factor 55), micro-acceleration flowmeter sensor of the present invention is fixed on shaking table system, by automated calibration system (automated calibration system involving vibrations platform system, be fixed on the standard micro-acceleration flowmeter sensor on shaking table system, and the computerized control system to be connected with standard micro-acceleration flowmeter sensor with shaking table system) sinusoidal excitation signal is applied to micro-acceleration flowmeter sensor of the present invention, record its output signal as shown in figure 17, show that the standard sine signal response waveform provided for shaking table system is complete, frequency is correct, 2) as shown in figure 18 for micro-acceleration gauge of the present invention makes the frequency response schematic diagram of reperformance test at different time, be the amplitude-versus-frequency curve figure of micro-acceleration gauge of the present invention as shown in figure 19, be the phase-frequency characteristic curve map of micro-acceleration gauge of the present invention as shown in figure 20, show that micro-acceleration gauge of the present invention frequency response within the scope of 400-1000Hz is better, 3) when passing through to apply to fix leakage pressure, change grid voltage to the e index semiconductor device of micro-acceleration gauge of the present invention, the voltage of micro-acceleration gauge of the present invention is exported and test and carry out the curve after linear fit as shown in figure 15 with the acceleration signal of applying, can be calculated and be 17.7mV/g in saturation region sensitivity and be 3.9mV/g (sensitivity is slope of a curve) in linear zone sensitivity, absolutely prove that micro-acceleration gauge of the present invention can realize highly sensitive detection.
Micro-acceleration gauge of the present invention has high sensitivity, effectively make use of the stress-electric coupling of e index semiconductor device, switching mechanism, solves the low problem that cannot meet measurement and require of existing micro-acceleration gauge sensitivity, can be widely used in acceleration analysis.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of step 3 in the first step of the present invention.
Fig. 3 is the structural representation of step 4 in the first step of the present invention.
Fig. 4 is the structural representation of step 5 in the first step of the present invention.
Fig. 5 is the structural representation of step 6 in the first step of the present invention.
Fig. 6 is the structural representation of step 7 in the first step of the present invention.
Fig. 7 is the structural representation of step 8 in the first step of the present invention.
Fig. 8 is the structural representation of RTT membraneous material in the present invention.
Fig. 9 be under different grid voltage to the present invention in e index semiconductor device test I-V performance diagram.
Figure 10 is at different temperatures to the I-V performance diagram of e index semiconductor device test in the present invention.
Figure 11 is the output characteristic curve comparison diagram of the present invention and existing HEMT micro-acceleration gauge.
Figure 12 is the transfer characteristic curve comparison diagram of the present invention and existing HEMT micro-acceleration gauge.
Output characteristic curve figure before and after Figure 13 pressurizes when being and carrying out static pressurization experiment to the present invention.
Figure 14 is pressurization front and back output situation of the present invention in Figure 13.
Figure 15 is the I-V performance diagram of e index semiconductor device when upwards applying 0g and-1g to invention detection side.
Figure 16 is the experimental system figure to sensory characteristic test of the present invention.
Figure 17 is the output signal curve figure recorded by Figure 16 experimental system.
Figure 18 is the frequency response schematic diagram that micro-acceleration gauge different time of the present invention does reperformance test.
Figure 19 is the amplitude-versus-frequency curve figure of micro-acceleration gauge of the present invention.
Figure 20 is the phase-frequency characteristic curve map of micro-acceleration gauge of the present invention.
Figure 21 is that micro-acceleration gauge of the present invention exports the curve map after carrying out linear fit with the acceleration signal applied at three kinds of different condition lower sensor voltages.
In figure: 1-Si base extension 2umGaAs substrate; 2-ohmic contact layer; 3-double recess; 4-Schottky contacts grid; 5-Si
3n
4passivation layer; 6-substrate; 7-e index semiconductor device; 8-mass; 9-detects beam; 10-control punch.
Embodiment
Based on the embedded high-sensitivity micro-acceleration gauge of e index semiconductor device, comprise Si base extension 2umGaAs substrate 1, e index semiconductor device 7, mass 8, detect beam 9 and control punch 10; It is obtained by the manufacture method comprised the steps:
(1), the preparation of e index semiconductor device 7:
Step 1: check the surfaceness of Si base extension 2umGaAs substrate 1 and measure its resistivity, mobility electrical parameter; Under ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate 1, grow HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below successively, form RTT membraneous material;
Table 1
Step 2, the surface clean of RTT membraneous material is totally measured its resistivity afterwards, mobility electrical parameter makes it to be less than an order of magnitude with the resistivity of Si base extension 2umGaAs substrate 1, the ratio of mobility electrical parameter measurement result in previous step; Obtain substrate 6;
Step 3, on the substrate 6 painting one deck photoresist, etching RTT membraneous material, forms RTT mesa structure;
Step 4, on RTT table top, be coated with one deck photoresist, etching RTD membraneous material, forms RTD table top and HEMT mesa structure;
Step 5, in the n-GaAs cap layers of RTD table top and the n-GaAs cap layers of HEMT side table top, evaporation deposition a layer thickness is
with arbitrary proportion mixing metallic combination Au-Ge-Ni; Continue to cover a layer thickness and be
metal A u; At 460 DEG C-560 DEG C (460 DEG C, 500 DEG C, 560 DEG C) temperature, after 30s alloying, form ohmic contact layer 2;
Step 6, on HEMT table top, be coated with one deck photoresist, etching forms N
+groove, continues etching and forms grid groove, thus obtain double recess 3;
Step 7, the metallic combination Ti-Pd-Au that deposit one deck mixes with arbitrary proportion on grid groove, continuing evaporation deposition a layer thickness is
metal A u, form Schottky contacts grid 4;
Step 8, in double recess 3, PECVD deposit a layer thickness is utilized to be
si
3n
4passivation layer 5 thus Schottky contacts grid 4 are isolated; Obtain e index semiconductor device 7;
(2) be coated with one deck photoresist on the substrate 6 to protect e index semiconductor device 7, utilize ICP lithographic technique to etch control punch 10 in Si base extension 2umGaAs substrate 1 front, etching depth is the thickness detecting beam 9;
(3), to substrate 6 front protect, substrate 6 thinning back side, deep etching is carried out at mass 8 back side;
(4), from substrate 6 back side ICP etch control punch 10 until penetrate, continue ICP and etch substrate 6 back side formation desired thickness and have flexible detection beam 9, final release mass 8, forms complete micro-acceleration gauge structure.
Claims (1)
1., based on the embedded high-sensitivity micro-acceleration gauge of e index semiconductor device, comprise Si base extension 2umGaAs substrate (1), e index semiconductor device (7), mass (8), detect beam (9) and control punch (10); It is characterized in that: it is obtained by the manufacture method comprised the steps:
(1), the preparation of e index semiconductor device (7):
Step 1: check the surfaceness of Si base extension 2umGaAs substrate (1) and measure its resistivity, mobility electrical parameter; Under ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate (1), grow HEMT membraneous material successively and be positioned at the RTD membraneous material above HEMT membraneous material, forming RTT membraneous material; RTD membraneous material is made up of trap and cap layers before trap, double potential barrier unipotential well structure, the second base before collector/cap layers, etch stop layer, first base from bottom to up successively; Collector/cap layers is 5 × 10 by Si doping content
18cm
-3, thickness be 50nm n-GaAs material composition; Etch stop layer is divided into two-layer, the undoped In of to be thickness be on upper strata 80nm
0.1ga
0.9as material layer, the undoped AlGa material layer of lower floor to be thickness be 2nm; Before first base, trap is divided into three layers, the undoped GaAs material layer of ground floor to be thickness be 5nm, the undoped In of the second layer to be thickness be 5nm
0.1ga
0.9as material layer, the undoped GaAs material layer of third layer to be thickness be 0.5nm; Double potential barrier unipotential well structure is divided into five layers, the undoped AlAs material layer of ground floor to be thickness be 1.7nm, the undoped GaAs material layer of the second layer to be thickness be 0.5nm, the undoped In of third layer to be thickness be 4nm
0.1ga
0.9as material layer, the 4th layer for thickness be the undoped GaAs material layer of 0.5nm, the undoped AlAs material layer of layer 5 to be thickness be 1.7nm; Second build before trap is divided into three layers, the undoped GaAs material layer of ground floor to be thickness be 0.5nm, the undoped In of the second layer to be thickness be 5nm
0.1ga
0.9as material layer, the undoped GaAs material layer of third layer to be thickness be 5nm; Cap layers is divided into two-layer, and upper strata is Si doping content is 3*10
18cm
-3, thickness is the n-GaAs material layer of 100nm, lower floor is Si doping content is 10
17cm
-3, thickness is the n-GaAs material layer of 10nm; HEMT membraneous material is from bottom to up successively by super-lattice buffer layer, and material is GaAs, undoped and thickness is the separation layer of 50nm, and material is In
0.20ga
0.80as, undoped and thickness is the channel layer of 12nm, material is Al
0.24ga
0.76as, undoped and thickness is the separation layer of 4.2nm, Si doping content is 3.6 × 10
12cm
-2and thickness is the planar sheet doping layers carrying out δ doping, material is n-Al
0.24ga
0.76as, Si doping content is 3 × 10
17cm
-3and thickness is the electronics providing layer of 30nm, and etch stop layer composition; Super-lattice buffer layer is divided into two-layer, upper strata be 10 cycles by the undoped Al of the undoped GaAs material layer of to be thickness be on upper strata 1.5nm and lower floor to be thickness be 18.5nm
0.24ga
0.76the cushion of As material layer composition, the undoped GaAs material layer composition of lower floor to be thickness be 200nm; Etch stop layer is divided into two-layer, the undoped Al of to be thickness be on upper strata 4nm
0.1ga
0.9as material layer, the undoped GaAs material layer composition of lower floor to be thickness be 2nm;
Step 2, the surface clean of RTT membraneous material is totally measured its resistivity afterwards, mobility electrical parameter makes it to be less than an order of magnitude with the resistivity of Si base extension 2umGaAs substrate (1) in previous step, the ratio of mobility electrical parameter measurement result; Obtain substrate (6);
Step 3, be coated with one deck photoresist substrate (6) is upper, etching RTT membraneous material, forms RTT mesa structure;
Step 4, on RTT table top, be coated with one deck photoresist, etching RTD membraneous material, forms RTD table top and HEMT mesa structure;
Step 5, in the n-GaAs cap layers of RTD table top and the n-GaAs cap layers of HEMT side table top, evaporation deposition a layer thickness is
with arbitrary proportion mixing metallic combination Au-Ge-Ni; Continue to cover a layer thickness and be
metal A u; At 460 DEG C of-560 DEG C of temperature, after 30s alloying, form ohmic contact layer (2);
Step 6, on HEMT table top, be coated with one deck photoresist, etching forms N
+groove, continues etching and forms grid groove, thus obtain double recess (3);
Step 7, the metallic combination Ti-Pd-Au that deposit one deck mixes with arbitrary proportion on grid groove, continuing evaporation deposition a layer thickness is
metal A u, formed Schottky contacts grid (4);
Step 8, in double recess (3), PECVD deposit a layer thickness is utilized to be
si
3n
4passivation layer (5) thus Schottky contacts grid (4) are isolated; Obtain e index semiconductor device (7);
(2) at substrate (6) upper one deck photoresist that is coated with, e index semiconductor device (7) is protected, utilize ICP lithographic technique to etch control punch (10) in Si base extension 2umGaAs substrate (1) front, etching depth is the thickness detecting beam (9);
(3), to substrate (6) front protect, substrate (6) thinning back side, deep etching is carried out at mass (8) back side;
(4), control punch (10) is etched until penetrate from substrate (6) back side ICP, continue ICP etch substrate (6) back side formation desired thickness and there is flexible detection beam (9), final release mass (8), forms complete micro-acceleration gauge structure.
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| CN201110299758.6A CN102507978B (en) | 2011-09-29 | 2011-09-29 | Embedded highly-sensitive micro-accelerometer based on e index semiconductor device |
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| CN102507978B true CN102507978B (en) | 2014-12-17 |
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| CN106290982B (en) * | 2016-07-29 | 2019-05-17 | 中国科学技术大学 | A kind of accelerometer and preparation method thereof |
| CN109507451B (en) * | 2018-10-24 | 2020-08-14 | 西安交通大学 | Acceleration sensor chip based on molybdenum disulfide film and processing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945765A (en) * | 1988-08-31 | 1990-08-07 | Kearfott Guidance & Navigation Corp. | Silicon micromachined accelerometer |
| CN1752757A (en) * | 2005-09-12 | 2006-03-29 | 中北大学 | Resonance tunnel through pressure resistance type micro acceleration meter |
| CN102109534A (en) * | 2010-11-30 | 2011-06-29 | 南京理工大学 | Two-axis resonant silicon micro-accelerometer |
| CN102147423A (en) * | 2011-02-25 | 2011-08-10 | 东南大学 | Dual-axle integrated fully-coupled silicon micro-resonance type accelerometer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050172717A1 (en) * | 2004-02-06 | 2005-08-11 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945765A (en) * | 1988-08-31 | 1990-08-07 | Kearfott Guidance & Navigation Corp. | Silicon micromachined accelerometer |
| CN1752757A (en) * | 2005-09-12 | 2006-03-29 | 中北大学 | Resonance tunnel through pressure resistance type micro acceleration meter |
| CN102109534A (en) * | 2010-11-30 | 2011-06-29 | 南京理工大学 | Two-axis resonant silicon micro-accelerometer |
| CN102147423A (en) * | 2011-02-25 | 2011-08-10 | 东南大学 | Dual-axle integrated fully-coupled silicon micro-resonance type accelerometer |
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