CN102507978A - Embedded highly-sensitive micro-accelerometer based on e index semiconductor device - Google Patents
Embedded highly-sensitive micro-accelerometer based on e index semiconductor device Download PDFInfo
- Publication number
- CN102507978A CN102507978A CN2011102997586A CN201110299758A CN102507978A CN 102507978 A CN102507978 A CN 102507978A CN 2011102997586 A CN2011102997586 A CN 2011102997586A CN 201110299758 A CN201110299758 A CN 201110299758A CN 102507978 A CN102507978 A CN 102507978A
- Authority
- CN
- China
- Prior art keywords
- substrate
- micro
- etching
- index semiconductor
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Pressure Sensors (AREA)
Abstract
The invention relates to a micro-accelerometer and in particular relates to an embedded highly-sensitive micro-accelerometer based on an e index semiconductor device. According to the invention, the problems that the existing micro-accelerometer is low in sensitivity and cannot meet the measurement requirements are solved. The embedded highly-sensitive micro-accelerometer based on the e index semiconductor device comprises a Si-base epitaxial 2-micrometer GaAs substrate, the e index semiconductor device, a mass block, a detection beam and a control hole. The embedded highly-sensitive micro-accelerometer provided by the invention is manufactured by a manufacturing method comprising the following steps of: preparing the e index semiconductor device: etching the control hole; carrying out deep groove etching on the back side of the mass block; carrying out ICP (Inductively Coupled Plasma) etching on the control hole from the back side of a substrate until the substrate is penetrated; continuously carrying out the ICP etching on the back side of the substrate to form the detection beam, and finally releasing the mass block so as to form a complete micro-accelerometer structure. The micro-accelerometer provided by the invention is high in sensitivity, effectively utilizes the mechanical-electrical coupling and conversion mechanisms of the e index semiconductor device, and can be widely applied to acceleration measurement.
Description
Technical field
The present invention relates to micro-acceleration gauge, be specially a kind of embedded high sensitivity micro-acceleration gauge based on e index semiconductor devices.
Background technology
Mostly the detection mode that existing micro-acceleration gauge uses is the pressure resistance type detection mode; Its ultimate principle is based on the piezoresistive effect principle of DOPOS doped polycrystalline silicon; The advantage of silicon piezoresistance type has that volume is little, wide frequency range, broad quantum, direct voltage output signal, do not need complicated circuit, cheap, good reproducibility etc.; But its shortcoming also big limitations the application of silicon piezoresistance type accelerometer: resistivity is bigger to dependence on temperature, and diminishes rapidly with the rising of temperature; To be difficult for the voltage dependent resistor (VDR) consistance that accurately control causes relatively poor owing to doping content and doping size.The resistivity of silicon pressure sensitive to dependence on temperature greatly mainly be because the silicon voltage dependent resistor (VDR) through highly doped making, the high temperature influence of carrier concentration is big, so temperature is very big to the sensitivity of silicon voltage dependent resistor (VDR) influence.Above-mentioned drawbacks limit the application of the little piezoresistive accelerometer of silicon on high sensor.
E index semiconductor devices is a kind of novel semiconductor devices of setting up based on the remodulates doped structure that grows up the beginning of the eighties in last century.The I-V characteristic of e index semiconductor devices is the e exponential relationship; The various extraneous parameter of this characteristic relation to causing that carrier transport properties (like mobility) changes; Response like the variation of optics, calorifics, mechanical quantity is extremely sensitive, therefore can on suitable working point, realize the highly sensitive detection of external parameter.If e index semiconductor devices is embedded in the micro-nano physical construction, then should be able to realize highly sensitive detection to mechanical quantity and variation thereof, no matter this is aspect relevant traditional sensors or newborn sensor, all will have important application.In recent years, the research of this aspect has caused in the world widely to be paid close attention to, and the research based on the micro-nano mechanical pick-up device of e index semiconductor devices has had relevant report abroad, has shown its highly sensitive characteristic.E index semiconductor devices adopts the remodulates doped structure, at wide band gap semiconducter one side doping donor impurity, undopes in heterojunction narrow band gap one side, and donor impurity ionization produces electronics and positively charged donor impurity center like this.Wide band gap semiconducter and narrow bandgap semiconductor material that e index semiconductor devices uses the n type to mix are usually made; Its advantage is that the fermi level position of heterojunction both sides semiconductor material is different; Can make electronics transfer to lower low bandgap material one side from higher wide bandgap material one side of Fermi level; Alms giver's ionized impurity in the raceway groove is separated, to form two-dimensional electron gas with Cyberspace.Make through extra electric field simultaneously and form quantum well in the channel layer; Because the de Broglie wave wavelength of electronics and the width of quantum well are comparable; Therefore energy generation quantization on perpendicular to the direction of heterojunction boundary, the motion of two-dimensional electron gas on this direction loses degree of freedom.The electron mobility of two-dimensional electron gas through the non-doping separation layer of growth between channel layer and doped layer, can further improve its electron mobility far above the electron mobility of semiconductor material.Under the low temperature environment, the electrons transport property of two-dimensional electron gas is more superior.Because e index semiconductor devices has utilized quantum size effect; It utilizes the band-edge energy difference of heterojunction that electron motion has been carried out restriction effectively on the one dimension direction; Make the quantization of energy of electronics on its lengthwise movement direction, formed the two-dimensional electron gas of high concentration.When the channel part material is received stress, semiconductor material band structure corresponding the variation taken place, and then cause variation to the electronics restriction, had influence on two-dimensional electron gas in the raceway groove, and then made strain potential that variation take place.Utilize this principle to develop the high sensitivity micro-acceleration gauge that combines with HEMT at present; The piezoresistance coefficient of its HEMT is 3 one magnitude of traditional silicon pressure resistance type; But along with the raising of measurement requirement, existing HEMT micro-acceleration gauge can't meet the demands.
Summary of the invention
The present invention provides a kind of embedded high sensitivity micro-acceleration gauge based on e index semiconductor devices in order to solve the low problem that can't satisfy measurement requirement of existing micro-acceleration gauge sensitivity.
The present invention adopts following technical scheme to realize: based on the embedded high sensitivity micro-acceleration gauge of e index semiconductor devices, comprise Si base extension 2umGaAs substrate, e index semiconductor devices, mass, detection beam and control punch; It is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices:
Step 1: the surfaceness of check Si base extension 2umGaAs substrate is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate, grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
(2) on substrate, being coated with one deck photoresist protects e index semiconductor devices; Utilize ICP (inductively coupled plasma etching) lithographic technique to etch control punch, the thickness (thickness that detects beam be well known to a person skilled in the art the thickness that existing gyroscope on detects beam) of etching depth for detecting beam in Si base extension 2umGaAs substrate face;
(3), the substrate front is protected, the substrate back attenuate carries out deep etching with the mass back side;
(4), from substrate back ICP etching control punch until penetrating, continue that ICP etching substrate back forms desired thickness and rubber-like detects beam, finally discharge mass, form complete micro-acceleration gauge structure.
During use, micro-acceleration gauge of the present invention is under the effect of extraneous power, and mass can produce skew on sensitive direction; Make and detect girder construction and produce deformation, and then make in the e index semiconductor devices channel layer on the sensor construction and produce STRESS VARIATION, the band structure generation respective change of semiconductor material; And then cause two-dimensional electron gas that the restriction of electronics is changed; Have influence on the two-dimensional electron gas in the channel layer, finally can be reflected to the I-V characteristic variations of e index semiconductor devices, but utilize suitable peripheral circuit to convert this variation into measuring-signal; As exporting with forms such as voltage signals; Demarcate through signal testing and can obtain sensor output signal and by the relation between the measuring acceleration, i.e. power electric coupling, conversion characteristic, thus measure extraneous acceleration signal.
Carried out following test experiments respectively to micro-acceleration gauge of the present invention and e index semiconductor devices thereof:
1, utilize semiconductor parameter specificity analysis appearance Agilent 4156C that the e index semiconductor devices on the micro-acceleration gauge of the present invention is carried out the semiconductor parametric test experiment respectively under different grid voltages and different temperatures; Like Fig. 9 and shown in Figure 10, can obtain the I-V family curve of e index semiconductor devices.Test result shows, the faint reduction of the electric current of e index semiconductor devices with the rising of temperature, and the e index performance of semiconductor device on the micro-acceleration gauge of the present invention is good.
2, utilize semiconductor parameter specificity analysis appearance Agilent 4156C that the HEMT on e index semiconductor devices on the micro-acceleration gauge of the present invention and the existing HEMT micro-acceleration gauge is carried out the semiconductor parameter contrast test; Like Figure 11 and shown in Figure 12, obtain output characteristic curve and the transfer characteristic curve comparison diagram of the two.Test result shows; Under the same test condition; The I-V family curve of the HEMT of the I-V family curve of the e index semiconductor devices on the micro-acceleration gauge of the present invention on the existing HEMT micro-acceleration gauge has taken place to move on very big; It is more obvious that the saturation region changes, and the former transfer characteristic curve slope is also obviously greater than the latter, so the existing HEMT micro-acceleration gauge of the present invention has higher sensitivity.
3, micro-acceleration gauge of the present invention is carried out static state pressurization experiment, the output characteristic curve before and after the pressurization is shown in figure 13.As can be seen from the figure, pressurization back I-V family curve has taken place to move, and this embodies particularly evident in the saturation region.Figure 14 is the output situation of micro-acceleration gauge of the present invention before and after the static pressurization, and when using probe that mass is applied external force, the I-V family curve squints; And after discharging mass, curve returns to the position before the pressurization too, and this has just well verified good restorative of power electric coupling characteristic and its of the e index semiconductor devices microstructure on the micro-acceleration gauge of the present invention.
4, micro-acceleration gauge of the present invention is carried out piezoresistance coefficient gravity experiment: shown in figure 15 for uses semiconductor parameter specificity analysis appearance Agilent 4156C test micro-acceleration gauge of the present invention the detection side upwards apply power as 0g and-the I-V family curve comparison diagram of e index semiconductor devices during 1g; Carry out the stress simulation analysis through the Ansys simulation software; Maximum stress on the estimation sensor beam, calculate according to following piezoresistance coefficient formula:
Wherein: σ is a stress, and the electric current when I is agravic, Δ I are the electric current changing value.
Utilize changes in resistance under high precision multimeter test-1g and the 0g; But the maximum piezoresistance coefficient of the e index semiconductor devices on the knowledge capital invention micro-acceleration gauge is than high four one magnitude of pressure-sensitive coefficient of traditional silicon material voltage dependent resistor (VDR); Maximum piezoresistance coefficient than the HEMT on the existing HEMT micro-acceleration gauge exceeds an one magnitude, explains that the present invention has higher sensitivity than existing HEMT micro-acceleration gauge.
5, micro-acceleration gauge is carried out the sensory characteristic experiment: 1) adopt experimental system (experiment condition: V shown in figure 16
D=2V, V
G=0.6V; F=600Hz; Acceleration 20g; Enlargement factor 55), micro-acceleration flowmeter sensor of the present invention is fixed on the shaking table system, micro-acceleration flowmeter sensor of the present invention is applied sinusoidal excitation signal through automated calibration system (automated calibration system involving vibrations platform system, the computerized control system that is fixed in the standard micro-acceleration flowmeter sensor on the shaking table system and links to each other with standard micro-acceleration flowmeter sensor) with shaking table system; It is shown in figure 17 to record its output signal, shows that the standard sine signal response waveform that provides for shaking table system is complete, frequency is correct; 2) the frequency response synoptic diagram of doing reperformance test for micro-acceleration gauge of the present invention at different time shown in figure 18; Shown in figure 19 for the amplitude-versus-frequency curve figure of micro-acceleration gauge of the present invention; Shown in figure 20ly be the phase-frequency characteristic curve map of micro-acceleration gauge of the present invention, show that micro-acceleration gauge of the present invention frequency response in the 400-1000Hz scope is better; 3) apply through e index semiconductor devices that fixing to leak the curve of pressing, when changing grid voltage the voltage output of micro-acceleration gauge of the present invention being tested and carry out behind the linear fit with the acceleration signal that applies shown in figure 15 to micro-acceleration gauge of the present invention; Calculating can be in the saturation region sensitivity be 17.7mV/g and be 3.9mV/g (sensitivity is slope of a curve) in linear zone sensitivity, prove absolutely that micro-acceleration gauge according to the invention can realize highly sensitive detection.
Micro-acceleration gauge of the present invention has high sensitivity, has effectively utilized power electric coupling, the switching mechanism of e index semiconductor devices, has solved the low problem that can't satisfy measurement requirement of existing micro-acceleration gauge sensitivity, can be adaptable across acceleration analysis.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of step 3 in the first step of the present invention.
Fig. 3 is the structural representation of step 4 in the first step of the present invention.
Fig. 4 is the structural representation of step 5 in the first step of the present invention.
Fig. 5 is the structural representation of step 6 in the first step of the present invention.
Fig. 6 is the structural representation of step 7 in the first step of the present invention.
Fig. 7 is the structural representation of step 8 in the first step of the present invention.
Fig. 8 is the structural representation of RTT membraneous material among the present invention.
Fig. 9 be under different grid voltages to the present invention in the I-V performance diagram of e index semiconducter device testing.
Figure 10 be under different temperatures to the present invention in the I-V performance diagram of e index semiconducter device testing.
Figure 11 is the output characteristic curve comparison diagram of the present invention and existing HEMT micro-acceleration gauge.
Figure 12 is the transfer characteristic curve comparison diagram of the present invention and existing HEMT micro-acceleration gauge.
Figure 13 is the output characteristic curve figure before and after the present invention is carried out pressurizeing when static pressurization is tested.
Figure 14 is a pressurization front and back output situation of the present invention among Figure 13.
Figure 15 is the I-V performance diagram of e index semiconductor devices when the invention detection side is upwards applied 0g with-1g.
Figure 16 is the experimental system figure to sensory characteristic test of the present invention.
Figure 17 is the output signal curve figure that records through Figure 16 experimental system.
Figure 18 is the frequency response synoptic diagram that micro-acceleration gauge different time of the present invention is done reperformance test.
Figure 19 is the amplitude-versus-frequency curve figure of micro-acceleration gauge of the present invention.
Figure 20 is the phase-frequency characteristic curve map of micro-acceleration gauge of the present invention.
Figure 21 is the curve map of micro-acceleration gauge of the present invention after three kinds of different condition lower sensor voltage outputs are carried out linear fit with the acceleration signal that applies.
Among the figure: 1-Si base extension 2umGaAs substrate; The 2-ohmic contact layer; The 3-double recess; 4-Schottky contacts grid; 5-Si
3N
4Passivation layer; The 6-substrate; 7-e index semiconductor devices; The 8-mass; 9-detects beam; The 10-control punch.
Embodiment
Based on the embedded high sensitivity micro-acceleration gauge of e index semiconductor devices, comprise Si base extension 2umGaAs substrate 1, e index semiconductor devices 7, mass 8, detect beam 9 and control punch 10; It is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices 7:
Step 1: the surfaceness of check Si base extension 2umGaAs substrate 1 is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate 1, grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
(2) on substrate 6, be coated with one deck photoresist e index semiconductor devices 7 is protected, utilize the ICP lithographic technique to etch control punch 10 in Si base extension 2umGaAs substrate 1 front, etching depth is for detecting the thickness of beam 9;
(3), substrate 6 fronts are protected, substrate 6 thinning back sides carry out deep etching with mass 8 back sides;
(4), from substrate 6 back side ICP etching control punchs 10 until penetrating, continue that ICP etching substrate 6 back sides form desired thickness and rubber-like detects beam 9, finally discharge mass 8, form complete micro-acceleration gauge structure.
Claims (1)
1. based on the embedded high sensitivity micro-acceleration gauge of e index semiconductor devices, comprise Si base extension 2umGaAs substrate (1), e index semiconductor devices (7), mass (8), detect beam (9) and control punch (10); It is characterized in that: it is to be made by the manufacturing approach that comprises the steps:
(1), the preparation of e index semiconductor devices (7):
Step 1: the surfaceness of check Si base extension 2umGaAs substrate (1) is also measured its resistivity, mobility electrical parameter; Under the ultravacuum environment, adopt molecular beam epitaxy technique on Si base extension 2um GaAs substrate (1), grow successively HEMT membraneous material and the RTD membraneous material of parameter as shown in table 1 below, formation RTT membraneous material;
Table 1
Step 2, with the clean back of the surface clean of RTT membraneous material measure its resistivity, the mobility electrical parameter makes it with a last step in the ratio of resistivity, mobility electrical parameter measurement result of Si base extension 2umGaAs substrate (1) less than an one magnitude; Obtain substrate (6);
Step 3, on substrate (6), be coated with one deck photoresist, etching RTT membraneous material forms the RTT mesa structure;
Step 4, on the RTT table top, be coated with one deck photoresist, etching RTD membraneous material forms RTD table top and HEMT mesa structure;
Step 5, the metallic combination Au-Ge-Ni that evaporation deposition one layer thickness is
on the n-GaAs cap layer of the n-GaAs of RTD table top cap layer and HEMT one side stage face with the arbitrary proportion mixing; Continuing to cover a layer thickness is the metal A u of
; Under 460 ℃ of-560 ℃ of temperature, through forming ohmic contact layer (2) after the 30s alloying;
Step 6, on the HEMT table top, be coated with one deck photoresist, etching forms N
+Groove continues etching and forms the grid groove, thereby obtains double recess (3);
Step 7, the metallic combination Ti-Pd-Au that deposit one deck mixes with arbitrary proportion on the grid groove; Continuing evaporation deposition one layer thickness is the metal A u of
, forms Schottky contacts grid (4);
Step 8, on double recess (3), utilize PECVD deposit one layer thickness to do
Si
3N
4Passivation layer (5) thus Schottky contacts grid (4) are isolated; Obtain e index semiconductor devices (7);
(2) on substrate (6), be coated with one deck photoresist e index semiconductor devices (7) is protected, utilize the ICP lithographic technique to etch control punch (10) in Si base extension 2umGaAs substrate (1) front, etching depth is for detecting the thickness of beam (9);
(3), substrate (6) front is protected, substrate (6) thinning back side carries out deep etching with mass (8) back side;
(4), from substrate (6) back side ICP etching control punch (10) until penetrating, continue that ICP etching substrate (6) back side forms desired thickness and rubber-like detects beam (9), finally discharge mass (8), form complete micro-acceleration gauge structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110299758.6A CN102507978B (en) | 2011-09-29 | 2011-09-29 | Embedded highly-sensitive micro-accelerometer based on e index semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110299758.6A CN102507978B (en) | 2011-09-29 | 2011-09-29 | Embedded highly-sensitive micro-accelerometer based on e index semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102507978A true CN102507978A (en) | 2012-06-20 |
| CN102507978B CN102507978B (en) | 2014-12-17 |
Family
ID=46220084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110299758.6A Expired - Fee Related CN102507978B (en) | 2011-09-29 | 2011-09-29 | Embedded highly-sensitive micro-accelerometer based on e index semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102507978B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106290982A (en) * | 2016-07-29 | 2017-01-04 | 中国科学技术大学 | A kind of accelerometer and preparation method thereof |
| CN109507451A (en) * | 2018-10-24 | 2019-03-22 | 西安交通大学 | A kind of acceleration sensor chip and its processing method based on molybdenum disulfide film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945765A (en) * | 1988-08-31 | 1990-08-07 | Kearfott Guidance & Navigation Corp. | Silicon micromachined accelerometer |
| CN1752757A (en) * | 2005-09-12 | 2006-03-29 | 中北大学 | Resonance tunnel through pressure resistance type micro acceleration meter |
| US20060101912A1 (en) * | 2004-02-06 | 2006-05-18 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN102109534A (en) * | 2010-11-30 | 2011-06-29 | 南京理工大学 | Two-axis resonant silicon micro-accelerometer |
| CN102147423A (en) * | 2011-02-25 | 2011-08-10 | 东南大学 | Dual-axle integrated fully-coupled silicon micro-resonance type accelerometer |
-
2011
- 2011-09-29 CN CN201110299758.6A patent/CN102507978B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945765A (en) * | 1988-08-31 | 1990-08-07 | Kearfott Guidance & Navigation Corp. | Silicon micromachined accelerometer |
| US20060101912A1 (en) * | 2004-02-06 | 2006-05-18 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN1752757A (en) * | 2005-09-12 | 2006-03-29 | 中北大学 | Resonance tunnel through pressure resistance type micro acceleration meter |
| CN102109534A (en) * | 2010-11-30 | 2011-06-29 | 南京理工大学 | Two-axis resonant silicon micro-accelerometer |
| CN102147423A (en) * | 2011-02-25 | 2011-08-10 | 东南大学 | Dual-axle integrated fully-coupled silicon micro-resonance type accelerometer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106290982A (en) * | 2016-07-29 | 2017-01-04 | 中国科学技术大学 | A kind of accelerometer and preparation method thereof |
| CN106290982B (en) * | 2016-07-29 | 2019-05-17 | 中国科学技术大学 | A kind of accelerometer and preparation method thereof |
| CN109507451A (en) * | 2018-10-24 | 2019-03-22 | 西安交通大学 | A kind of acceleration sensor chip and its processing method based on molybdenum disulfide film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102507978B (en) | 2014-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104764547B (en) | A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method | |
| CN104729784B (en) | A kind of beam groove combines step island film micro-pressure sensor chip and preparation method | |
| CN100363743C (en) | Resonance tunnel through pressure resistance type micro acceleration meter | |
| CN104748904B (en) | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method | |
| CN102298074B (en) | Hole-crack double-bridge type acceleration sensor chip and preparation method thereof | |
| CN102175909B (en) | Micro-electro-mechanical system (MEMS) cantilever type microwave power automatic detection system and detection method and preparation method thereof | |
| RU167464U1 (en) | INTEGRAL SENSITIVE PRESSURE TRANSDUCER ELEMENT WITH TEMPERATURE SENSOR | |
| Alpuim et al. | Piezoresistive silicon thin film sensor array for biomedical applications | |
| CN103777038B (en) | A kind of many beam types surpass high-g level acceleration sensor chip and preparation method thereof | |
| CN103063339A (en) | Silicon piezoresistive type pressure sensor chip with shielding layer | |
| US7504658B2 (en) | Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride | |
| CN101241030A (en) | MOS force sensitive sensor | |
| CN206828092U (en) | A kind of pressure sensor for micro electro-mechanical system chip of Liang Mo mechanisms | |
| CN102507978A (en) | Embedded highly-sensitive micro-accelerometer based on e index semiconductor device | |
| CN108267262A (en) | A kind of temperature self-compensation semiconductor pressure resistance strain gauge | |
| CN104089642B (en) | Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor | |
| CN108545691A (en) | Novel gauge pressure transducer and preparation method thereof | |
| CN102506842B (en) | Embedded high-sensitivity micro gyroscope based on e index semiconductor device | |
| CN202267554U (en) | Silicon piezoresistive type pressure sensor chip with shielding layer | |
| de Cesare et al. | A novel a-Si: H mechanical stress sensor | |
| CN101718801A (en) | Micro-accelerometer based on high electron mobility transistor (HEMT) | |
| CN204831651U (en) | Gauge pressure pressure sensor chip is sealed up to polycrystalline silicon pressure drag formula | |
| CN106526232A (en) | Composite sensor and manufacture method thereof | |
| CN102401840A (en) | Si based HEMT embedded micro accelerator and production method thereof | |
| Li et al. | Development of a novel GaAs micromachined accelerometer based on resonant tunneling diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141217 Termination date: 20190929 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |