CN102259827B - Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor - Google Patents
Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor Download PDFInfo
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- CN102259827B CN102259827B CN201110173243.1A CN201110173243A CN102259827B CN 102259827 B CN102259827 B CN 102259827B CN 201110173243 A CN201110173243 A CN 201110173243A CN 102259827 B CN102259827 B CN 102259827B
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Abstract
The invention relates to a sensor encapsulating technology, in particular to a method for encapsulating an MEMS (micro electro mechanical system) high-range acceleration sensor. According to the invention, the problem that the existing sensor encapsulating technology has poor high overload resistance, low natural frequency and poor encapsulating reliability can be solved. The method for encapsulating the MEMS high-range acceleration sensor is realized in the following steps of: a) bonding a high borosilicate glass substrate on an anode; b) selecting a ceramic substrate; c) printing chip bonding pads and connecting wires; d) fixing a buffering substrate into a stainless steel encapsulation tube shell; e) welding a cable lead; f) filling and sealing the stainless steel encapsulation tube shell; and g) seaming and connecting a stainless steel cover plate onto the stainless steel encapsulation tube shell. By using the technology in the invention, the problem that the existing sensor encapsulating technology has low high overload resistance, low natural frequency and poor encapsulating reliability can be effectively solved and the technology is applicable to encapsulation of the MEMS high-range acceleration sensor.
Description
Technical field
The present invention relates to the encapsulation technology of sensor, specifically a kind of method for packing of MEMS high-range acceleration transducer.
Background technology
MEMS(is based on MEMS) high-range acceleration transducer is because volume is little, quality is light, cost is low, high reliability receives much concern, and the Aero-Space that especially have high requirements in the volume to device, quality and reliability and weapons scientific domain have very large application prospect.The research development in recent years of MEMS high-range acceleration transducer is rapid, and the high-range acceleration transducer of various performances, range is reported in succession.But different from the acceleration transducer of lower range, high-range acceleration transducer requires very high to anti high overload ability and intrinsic frequency, anti high overload Capability Requirement can bear a hundreds of thousands range shock loading under normal circumstances, and intrinsic frequency requires up to tens kHz, kHz even up to a hundred.Therefore, in application, MEMS high-range acceleration transducer usually causes structural failure because anti high overload ability is poor.For guaranteeing the reliability of MEMS high-range acceleration transducer in the time applying, it is particularly important that the encapsulation of MEMS high-range acceleration transducer just seems.Practice shows, existing sensor package technology ubiquity anti high overload ability, the problem that intrinsic frequency is low and package reliability is poor, adopt MEMS high-range acceleration transducer after the encapsulation of existing sensor package technology in the time running into severe applied environment, often occur that shell breaks, cover plate depression, chip from shell substrate come off, the problem such as wire breaking.Based on this, be necessary to invent a kind of brand-new sensor package technology, to guarantee the reliability of MEMS high-range acceleration transducer in the time applying.
Summary of the invention
The present invention, in order to solve existing sensor package technology anti high overload ability, intrinsic frequency is low and package reliability is poor problem, provides a kind of method for packing of MEMS high-range acceleration transducer.
The present invention adopts following technical scheme to realize: the method for packing of MEMS high-range acceleration transducer, the method is to adopt following steps to realize: the method for packing of MEMS high-range acceleration transducer, the method is to adopt following steps to realize: a), at the upper and lower surperficial anode linkage high-boron-silicon glass substrate of chip of MEMS high-range acceleration transducer, the thickness of two high-boron-silicon glass substrates equates; B) choose ceramic substrate, the thickness of ceramic substrate equals the thickness sum of thickness and the high-boron-silicon glass substrate of chip, ceramic substrate and chip are fixed on buffering substrate, guarantee that fixing rear ceramic substrate and chip are in same level, and ceramic substrate and inter-chip pitch compactness; C) on chip, print chip bonding pad by screen printing technique, utilize mould printed cable lead-in wire pad on ceramic substrate, connect wire at chip bonding pad and cable tail with printing between pad, and connecting covering insulating material on wire; D) buffering substrate, chip, high-boron-silicon glass substrate, ceramic substrate are fixed in stainless steel encapsulating package; E) the welding cable cable tail pad on ceramic substrate that goes between; F) utilize the inner chamber of casting glue embedding stainless steel encapsulating package; G) stainless steel cover plate is stitched on stainless steel encapsulating package.
The method for packing of MEMS high-range acceleration transducer of the present invention uses stainless steel encapsulating package, anti high overload ability by simulation analysis different materials encapsulating package draws with intrinsic frequency: compared with the encapsulating material that can be used for MEMS high-range acceleration transducer with pottery, kovar alloy and aluminium alloy etc., stainless steel encapsulating package has stronger anti high overload ability and the intrinsic frequency of Geng Gao simultaneously.
The method for packing of MEMS high-range acceleration transducer of the present invention passes through at the upper and lower surperficial anode linkage high-boron-silicon glass substrate of sensor chip, realize the level Hermetic Package of sensor chip, while having guaranteed sensor chip work, there is optimal damping constant, avoided embedding to impact sensor chip structure.Simultaneously because the thermal coefficient of expansion of high-boron-silicon glass is close with the thermal coefficient of expansion of sensor chip, reduce the impact on sensor chip of the thermal stress that causes in anode linkage technique.
The method for packing of MEMS high-range acceleration transducer of the present invention is printed and is connected wire to realize without lead-in wire electrical connection by screen printing technique, has avoided losing efficacy because the reasons such as bonding point comes off, wire breaking cause MEMS high-range acceleration transducer under high overload environment.Draw by the shock-testing of Hopkinson bar, under the HI high impact effect more than 150,000 g, compared with lead-in wire electrical connection, higher without the reliability of lead-in wire electrical connection.
The method for packing utilization buffering substrate of MEMS high-range acceleration transducer of the present invention and encapsulation technology have been realized the built-in mechanical filtering technique of MEMS high-range acceleration transducer.In applied environment, be applied in the impact signal of MEMS high-range acceleration transducer and often comprise high-frequency interferencing signal, high-frequency signal may cause sensor chip to lose efficacy, and takes built-in mechanical filtering technique can filter these high-frequency signals, further improves the reliability of encapsulation.
In sum, application requirements and the characteristic of the method for packing of MEMS high-range acceleration transducer of the present invention based on MEMS high-range acceleration transducer, design has realized three layers of encapsulation of acceleration sensor chip, has been electrically connected and built-in mechanical filtering without lead-in wire.Compared with existing sensor package technology, the method for packing of MEMS high-range acceleration transducer of the present invention has stronger anti high overload ability, higher intrinsic frequency and higher package reliability.While adopting MEMS high-range acceleration transducer after the method for packing encapsulation of MEMS high-range acceleration transducer of the present invention to apply, not only there will not be that shell breaks under high overload environment, cover plate depression, chip from shell substrate come off, the problem such as wire breaking, and there is good consistency of performance.
The present invention is realized three layers of encapsulation of acceleration sensor chip, is electrically connected and built-in mechanical filtering without lead-in wire by design, efficiently solve existing sensor package technology anti high overload ability, intrinsic frequency is low and package reliability is poor problem, be applicable to the encapsulation of MEMS high-range acceleration transducer.
Accompanying drawing explanation
Fig. 1 is the external structure schematic diagram of the MEMS high-range acceleration transducer after the method for packing of employing MEMS high-range acceleration transducer of the present invention encapsulates.
Fig. 2 is the internal structure schematic diagram of the MEMS high-range acceleration transducer after the method for packing of employing MEMS high-range acceleration transducer of the present invention encapsulates.
Fig. 3 is the part-structure schematic diagram of the MEMS high-range acceleration transducer after the method for packing of employing MEMS high-range acceleration transducer of the present invention encapsulates.
In figure: 1-chip, 2-high-boron-silicon glass substrate, 3-ceramic substrate, 4-cushions substrate, 5-chip bonding pad, 6-cable tail pad, 7-connects wire, 8-stainless steel encapsulating package, 9-cable tail, 10-stainless steel cover plate, 11-casting glue, 12-insulating materials.
The specific embodiment
The method for packing of MEMS high-range acceleration transducer, the method is to adopt following steps to realize:
A) equate at the thickness of the upper and lower surperficial anode linkage high-boron-silicon glass substrate of chip 12, the two high-boron-silicon glass substrates 2 of MEMS high-range acceleration transducer;
B) choose ceramic substrate 3, the thickness of ceramic substrate 3 equals the thickness sum of thickness and the high-boron-silicon glass substrate 2 of chip 1, ceramic substrate 3 and chip 1 are fixed on buffering substrate 4, guarantee that fixing rear ceramic substrate 3 and chip 1 are in same level, and ceramic substrate 3 and chip 1 spacing compactness;
C) on chip 1, print chip bonding pad 5 by screen printing technique, utilize mould printed cable lead-in wire pad 6 on ceramic substrate 3, connect wire 7 at chip bonding pad 5 and cable tail with printing between pad 6, and connecting covering insulating material 12 on wire 7;
D) buffering substrate 4, chip 1, high-boron-silicon glass substrate 2, ceramic substrate 3 are fixed in stainless steel encapsulating package 8;
E) welding cable lead-in wire 9 is to the pad 6 for cable tail on ceramic substrate;
F) utilize the inner chamber of casting glue 11 embedding stainless steel encapsulating packages 8;
G) stainless steel cover plate 10 is stitched on stainless steel encapsulating package 8.
In described step a), by the two surperficial anode linkage high-boron-silicon glass substrates up and down at sensor chip, protect sensor chip, and realized the level Hermetic Package of sensor chip.In anode linkage technique, need the Area Ratio of para-linkage temperature, high-boron-silicon glass substrate and chip, the thickness of high-boron-silicon glass substrate to be optimized, to reduce the effect of thermal stress to sensor chip.
In described step b), ceramic substrate and chip are bondd and are fixed on buffering substrate by Heraeus, in fixation procedure, need avoid Heraeus to flow out from high-boron-silicon glass substrate and ceramic substrate bottom.
In described step c), connect wire by printing and realize the electrical connection between chip bonding pad and cable tail pad.Protect the signal transmission of sensor by covering insulating material on connection wire, while preventing embedding, signal is short-circuited.The insulating materials of selecting can not with casting glue generation chemical reaction.
In described step d), buffering substrate, chip, high-boron-silicon glass substrate, ceramic substrate are bondd and are fixed in stainless steel encapsulating package by Heraeus.
Claims (1)
1. a method for packing for MEMS high-range acceleration transducer, is characterized in that: the method is to adopt following steps to realize:
A) at the upper and lower surperficial anode linkage high-boron-silicon glass substrate of chip (1) (2) of MEMS high-range acceleration transducer, the thickness of two high-boron-silicon glass substrates (2) equates;
B) choose ceramic substrate (3), the thickness of ceramic substrate (3) equals the thickness sum of thickness and the high-boron-silicon glass substrate (2) of chip (1), ceramic substrate (3) and chip (1) are fixed on buffering substrate (4), guarantee that fixing rear ceramic substrate (3) and chip (1) are in same level, and ceramic substrate (3) and chip (1) spacing compactness;
C) above print chip bonding pad (5) by screen printing technique at chip (1), utilize mould at the upper printed cable lead-in wire pad of ceramic substrate (3) (6), between pad (6), print and connect wire (7) at chip bonding pad (5) with for cable tail, and connecting the upper covering insulating material (12) of wire (7);
D) will cushion substrate (4), chip (1), high-boron-silicon glass substrate (2), ceramic substrate (3) is fixed in stainless steel encapsulating package (8);
E) welding cable lead-in wire (9) is to the pad for cable tail (6) on ceramic substrate;
F) utilize the inner chamber of casting glue (11) embedding stainless steel encapsulating package (8);
G) stainless steel cover plate (10) is stitched on stainless steel encapsulating package (8).
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| CN201110173243.1A CN102259827B (en) | 2011-06-25 | 2011-06-25 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
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| CN201110173243.1A CN102259827B (en) | 2011-06-25 | 2011-06-25 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
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| CN102259827B true CN102259827B (en) | 2014-06-25 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102520376B (en) * | 2011-12-22 | 2014-01-15 | 中北大学 | Cross current type three-axis vector magnetic sensor |
| CN102638753B (en) * | 2012-03-16 | 2014-05-21 | 中北大学 | MEMS (micro-electro-mechanical system) acoustic sensor based on graphene |
| CN102928621B (en) * | 2012-10-22 | 2014-06-18 | 中北大学 | Planar interconnection structure and method in package of high-range acceleration sensor |
| CN103071876B (en) * | 2013-01-05 | 2015-09-02 | 烟台睿创微纳技术有限公司 | A kind of welded encapsulation method and apparatus |
| CN103245798B (en) * | 2013-04-26 | 2014-08-20 | 中北大学 | Mechanical filtering method of high-range acceleration sensor |
| CN106383246B (en) * | 2016-09-08 | 2018-12-28 | 北方电子研究院安徽有限公司 | A kind of small-sized arrangements of accelerometers |
| CN106564852A (en) * | 2016-10-20 | 2017-04-19 | 北方电子研究院安徽有限公司 | Packaging structure for high-impact MEMS inertial sensor chip |
| CN107153384A (en) * | 2017-06-29 | 2017-09-12 | 北京宏动科技有限公司 | Active MEMS inertia switches |
| CN109813931B (en) * | 2019-01-25 | 2021-04-02 | 中北大学 | Ceramic silicon ceramic three-layer leadless packaging structure of high-range acceleration sensor |
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| DE202004004206U1 (en) * | 2004-03-11 | 2004-05-19 | Ab Elektronik Sachsen Gmbh | Plate shaped body for forming pressure measurement elements has a number of blind holes, the remaining thin area of which forms a pressure membrane for a pressure measurement element that also comprises a bridge circuit |
| CN201598171U (en) * | 2010-03-05 | 2010-10-06 | 南京理工大学 | Stress isolated MEMS inertial sensor packaging structure |
| CN102044621A (en) * | 2010-11-19 | 2011-05-04 | 东南大学 | Wafer-level glass ball cavity package method for light emitting diode flip chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102005008512B4 (en) * | 2005-02-24 | 2016-06-23 | Epcos Ag | Electrical module with a MEMS microphone |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202004004206U1 (en) * | 2004-03-11 | 2004-05-19 | Ab Elektronik Sachsen Gmbh | Plate shaped body for forming pressure measurement elements has a number of blind holes, the remaining thin area of which forms a pressure membrane for a pressure measurement element that also comprises a bridge circuit |
| CN201598171U (en) * | 2010-03-05 | 2010-10-06 | 南京理工大学 | Stress isolated MEMS inertial sensor packaging structure |
| CN102044621A (en) * | 2010-11-19 | 2011-05-04 | 东南大学 | Wafer-level glass ball cavity package method for light emitting diode flip chip |
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Inventor after: Shi Yunbo Inventor after: Liu Jun Inventor after: Tang Jun Inventor after: Yang Yuhua Inventor after: Li Ping Inventor after: Zhang He Inventor before: Liu Jun Inventor before: Shi Yunbo Inventor before: Tang Jun Inventor before: Yang Yuhua Inventor before: Li Ping Inventor before: Zhang He |
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Free format text: CORRECT: INVENTOR; FROM: LIU JUN SHI YUNBO TANG JUN YANG YUHUA LI PING ZHANG HE TO: SHI YUNBO LIU JUN TANG JUN YANG YUHUA LI PING ZHANG HE |
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