CN102130251B - Light emitting diode (LED) and manufacturing method thereof - Google Patents
Light emitting diode (LED) and manufacturing method thereof Download PDFInfo
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- CN102130251B CN102130251B CN201010503792.6A CN201010503792A CN102130251B CN 102130251 B CN102130251 B CN 102130251B CN 201010503792 A CN201010503792 A CN 201010503792A CN 102130251 B CN102130251 B CN 102130251B
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Abstract
The invention provides a light emitting diode (LED) and a manufacturing method thereof. The LED comprises a silicon carbide substrate, a buffer layer, an active layer, a cap layer, a plurality of grooves and light transmission components arranged in the grooves, wherein the buffer layer, the active layer and the cap layer are arranged on the silicon carbide substrate in sequence; and the grooves at least extend from the cap layer to the top of the buffer layer. The LED and the manufacturing method have the following advantage: the light emitted by the active layer can reach the light extraction surface of the LED through the light transmission components, thus improving the light use ratio of the LED.
Description
Technical field
The present invention relates to semiconductor light emitting field, relate in particular to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode), owing to having long, the advantage such as low that consumes energy of life-span, is applied to various fields, and especially along with its illumination performance index day by day significantly improves, LED is commonly used for light-emitting device at lighting field.
A kind of light-emitting diode is disclosed in the Chinese patent that is CN100461472C at notification number, with reference to figure 1, show the schematic diagram of described patent light-emitting diode one embodiment, described light-emitting diode comprises: substrate 101, be positioned at the silicon dioxide layer 102 on substrate 101, be positioned at the resilient coating 103 on silicon dioxide layer 102, be positioned at the multiple quantum well active layer 104 on resilient coating 103, be positioned at the limiting layer 105 in multiple quantum well active layer 104, be positioned at the covering 106 on limiting layer 105 and be positioned at the contact layer 107 on covering 106, wherein said silicon dioxide layer 102 comprises and being parallel to each other, the first triangle silicon dioxide layer of width gradual change and the second triangle silicon dioxide layer, described the first triangle silicon dioxide layer and the second triangle silicon dioxide layer are by first deposition of silica material, then (011) crystal orientation photoetching the corrosion along earth silicon material obtains, described multiple quantum well layer 104 is selecting region to form, and described multiple quantum well layer 104 is the metallorganics that form by chemical gaseous phase depositing process, can be used as gain media, make light-emitting diode under large Output optical power, still keep wider output spectrum scope.
In the technical scheme of above-mentioned patent, light-emitting diode can be realized wide spectrum, powerful characteristic simultaneously, but the light sending due to multiple quantum well active layer need to pass through limiting layer, covering etc. and could arrive exiting surface, and light transmission rate is lower, causes the light utilization efficiency of light-emitting diode lower.
Especially the light-emitting diode that is light transmissive material for substrate, the light that multiple quantum well active layer is sent also can, through light-transmissive substrates from the outgoing of the light-emitting diode back side, further cause the light utilization efficiency of light-emitting diode lower.
Along with the enhancing of people's environmental protection and energy saving consciousness, how to improve the light utilization efficiency of light-emitting diode, make light-emitting diode there is the feature of high brightness, low-power consumption, become those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves is to provide a kind of light-emitting diode, improves the light utilization efficiency of light-emitting diode.
A light-emitting diode, comprising: silicon carbide substrates; Be positioned at successively resilient coating, active layer, the cap layer of silicon carbide substrates top; Described light-emitting diode also comprises a plurality of a kind of light-emitting diodes, comprising: silicon carbide substrates; Be positioned at successively resilient coating, active layer, the cap layer of silicon carbide substrates top; Described light-emitting diode also comprises a plurality of grooves, and the degree of depth of described groove at least extends to breaker topping from described cap layer; Described light-emitting diode also comprises the translucent element that is positioned at described groove.
Also comprise the heat dissipating layer that is positioned at described silicon carbide substrates below.
Described trenched side-wall and channel bottom angle are 120 °～150 °.
Described translucent element comprises lens arrangement in light emitting diode light exit direction.
Also comprise the contact layer that is positioned at cap layer top.
Described contact layer comprises lens arrangement in the light exit direction of light-emitting diode.
Also comprise the first electrode, wherein, described contact layer comprises a plurality of lens arrangements, and the first electrode is on contact layer, between lens arrangement, and described the first electrode comprises for connecting the first electrode link of positive source.
The lens arrangement of described translucent element is coated with fluorescent material in light exit direction.
The lens arrangement of described contact layer is coated with fluorescent material in light exit direction.
Correspondingly, the present invention also provides a kind of manufacture method of light-emitting diode, comprising: silicon carbide substrates is provided; Above described silicon carbide substrates, form successively resilient coating, active layer, cap layer; Form and at least from cap layer, extend to the groove of breaker topping; In groove, fill light transmissive material.
Described resilient coating comprises the gallium nitride of N-type doping; Active layer comprises multiple quantum well active layer, and described multiple quantum well active layer comprises InGaN; Described cap layer comprises the gallium nitride of P type doping.
Described resilient coating comprises the aluminium gallium nitride alloy of N-type doping; Active layer comprises the aluminium gallium nitride alloy of P type doping, and described cap layer comprises the gallium nitride of P type doping.
Also be included in after described silicon carbide substrates top forms resilient coating, active layer, cap layer successively, below described silicon carbide substrates, form heat dissipating layer, the material of described heat dissipating layer comprises any one in titanium, aluminium, silver, gold and alloy thereof.
After being also included in formation cap layer, before forming groove, on cap layer, form contact layer, described contact layer comprises the gallium nitride of P type doping.
After being also included in formation cap layer, before forming groove, on cap layer, form contact layer, described contact layer comprises the aluminium gallium nitride alloy of P type doping.
After forming contact layer, on contact layer, form lens arrangement.
The step that forms lens arrangement on contact layer comprises: on contact layer, by photoetching, form a plurality of circular photoresist platforms; Described circular photoresist platform is toasted at 150 ℃～200 ℃ temperature, make described circular photoresist platform become spherical crown shape photoresist; The described spherical crown shape photoresist of take is mask, and contact layer forms lens arrangement described in ion beam etching.
In groove, filling light transmissive material, is within the scope of 150 ℃～200 ℃ in temperature, and light transmissive material described in high-temperature baking, makes the top of described light transmissive material be lens arrangement, forms the translucent element that comprises lens arrangement.
Described light transmissive material is epoxy resin.
Contact layer comprises a plurality of lens arrangements, after filling light transmissive material, on contact layer, between lens arrangement, forms the first electrode that comprises the first electrode link.
Also be included in coating fluorescent powder on the lens arrangement of contact layer.
Also be included in coating fluorescent powder on the lens arrangement of translucent element.
Compared with prior art, the present invention has the following advantages: described light-emitting diode also comprises a plurality of grooves, and the degree of depth of described groove extends to resilient coating; And being filled in the translucent element in described groove, the light that active layer sends can arrive by translucent element the exiting surface of light-emitting diode, because the light transmission rate of translucent element is higher, so the light utilization efficiency of described light-emitting diode is higher.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art light-emitting diode one embodiment;
Fig. 2 is the schematic diagram of light-emitting diode one embodiment of the present invention;
Fig. 3 is the schematic diagram of the first electrode one embodiment shown in Fig. 2;
Fig. 4 is the schematic flow sheet of method for manufacturing light-emitting one execution mode of the present invention;
Fig. 5 to Figure 10 is the cross-sectional view of an embodiment of method for manufacturing light-emitting of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
As said in background technology, the light-emitting diode of prior art is lower owing to being positioned at the multi-layer film structure light transmittance of active layer top, causes the problem that light-emitting diode light utilization efficiency is not high.
For the problems referred to above, the invention provides a kind of light-emitting diode, described light-emitting diode comprises: silicon carbide substrates; Be positioned at successively resilient coating, active layer, the cap layer of silicon carbide substrates top; The degree of depth extends to the groove of resilient coating and is filled in the translucent element in described groove, wherein, the light that active layer sends arrives the exiting surface of light-emitting diode through described translucent element, because the light transmission rate of described translucent element is higher, improved the light utilization efficiency of described light-emitting diode.
With reference to figure 2, show the schematic diagram of light-emitting diode one embodiment of the present invention, described light-emitting diode is for take the light-emitting diode that carborundum is substrate, and described light-emitting diode is gallium nitrate based blue light diode, comprising:
Heat dissipating layer 301, is positioned at the bottom of silicon carbide substrates 302.Because silicon carbide substrates 302 thermal conductivity are bad, heat dissipating layer 301 is for conducting near heat silicon carbide substrates 302, avoids that silicon carbide substrates 302 is overheated and to affect light-emitting diode normally luminous.
Be positioned at successively resilient coating 303, active layer 304 and the cap layer 305 of silicon carbide substrates 302 tops, described resilient coating 303, active layer 304 and cap layer 305 form the tube core of light-emitting diode.
Contact layer 306, is positioned at cap layer 305 top, and for realizing the tube core of light-emitting diode and being electrically connected to of electrode, described contact layer 306 has a plurality of lens arrangements in the light exit direction of light-emitting diode.
Described light-emitting diode comprises a plurality of grooves, and described groove extends to resilient coating 303, and described trenched side-wall and channel bottom angle theta are 120 °～150 °.Preferably, described angle theta is 135 °.
Described light-emitting diode also comprises the translucent element 309 being filled in described groove, because groove extends to resilient coating 303, so translucent element 309 extends to resilient coating 303, be positioned at so the light that the active layer 304 on resilient coating 303 sends and can arrive by translucent element 309 exiting surface of light-emitting diodes, because translucent element 309 is made and had high transmission rate by light transmissive material, for example, the light sending from active layer A point, by translucent element 309, arrive the D point of exiting surface, thereby improved the light utilization efficiency of light-emitting diode, particularly, the material of described translucent element comprises epoxy resin.
In addition, because trenched side-wall and channel bottom angle theta are 120 °～150 °, so the sidewall of described translucent element 309 and bottom surface angle are 120 °～150 °, the light that the sidewall of described translucent element 309 can send active layer 304 reflexes to the exiting surface of light-emitting diode, for example, the light sending from active layer A point, projects the some B on translucent element 309 sidewalls, arrives afterwards the C point of exiting surface after sidewall reflects.Thereby further improved the light utilization efficiency of light-emitting diode.
Preferably, described translucent element 309 also comprises lens arrangement on the exiting surface of light-emitting diode.
Contact layer 306 and the lens arrangement of translucent element 309 on light emitting surface of light emitting diode are for converging ray, the brightness that can improve light-emitting diode.
Described light-emitting diode also comprises that the first electrode 310, described the first electrode comprise the first electrode link 307, wherein, the first electrode 310 is arranged on contact layer 306, between lens arrangement, the first electrode link 307 is for connecting positive source, preferably, described the first electrode 310 comprises at least two the first electrode links 307, guarantees being electrically connected to of the first electrode and positive source, to improve the reliability of light-emitting diode.
With reference to figure 3, show the horizontal cross-section schematic diagram of the first electrode described in Fig. 2.Wherein, the first electrode 310 is realized and being electrically connected to around lens arrangement, by the first electrode link 307, is connected with positive source.
Described light-emitting diode also comprises and is coated on the lens arrangement of contact layer 306 and/or sees through the fluorescent material (not shown) on the lens arrangement of optical element 309, and described fluorescent material comprises the yttrium-aluminium-garnet (Ce of doped with cerium
3+: YAG), for obtaining white light.
Described light-emitting diode when luminous, by the first electrode be connected to power supply positive electrode, by heat dissipating layer, be connected to the negative electrode of power supply.LED core is connected with power supply positive electrode by the first electrode link of contact layer, the first electrode, by silicon carbide substrates, heat dissipating layer, is connected with power-electrode.Active layer in LED core is luminous under the function of current, and the exiting surface that the light that active layer sends sees through translucent element arrival light-emitting diode pipe has on the one hand improved light utilization efficiency.
In addition, the lens arrangement that is positioned at exiting surface can converging ray, the brightness that has improved light-emitting diode.
Correspondingly, the present invention also provides a kind of manufacture method of light-emitting diode, with reference to figure 4, shows the schematic diagram of method for manufacturing light-emitting one execution mode of the present invention, comprises the following steps:
S1, provides silicon carbide substrates;
S2 forms successively resilient coating, active layer, cap layer above described silicon carbide substrates;
S3, forms and at least from described cap layer, extends to the groove of breaker topping;
S4 fills light transmissive material in groove.
Fig. 5 to Figure 10 is the cross-sectional view of an embodiment of method for manufacturing light-emitting of the present invention.
With reference to figure 5, execution step s1, provides silicon carbide substrates 302, and silicon carbide substrates 302 can.
With reference to figure 6, execution step s2 forms successively resilient coating 303, active layer 304, cap layer 305 in described silicon carbide substrates 302.Wherein resilient coating 303 comprises the gallium nitride of N-type doping, and active layer 304 comprises multiple quantum well active layer, and particularly, described multiple quantum well active layer is InGaN, and for sending the blue light that wavelength is 470nm, cap layer 305 comprises the gallium nitride of P type doping.
Described method forms contact layer 306 after being also included in and forming cap layer 305 above cap layer 305, and for realizing the tube core of light-emitting diode and being electrically connected to of power supply, described contact layer 306 comprises the gallium nitride of P type doping.
Each layer of light-emitting diode can also adopt other materials, and for example, described resilient coating 303 comprises the aluminium gallium nitride alloy (Al of N-type doping
0.09ga
0.91n); Described active layer 304 comprises the aluminium gallium nitride alloy (Al of P type doping
0.18ga
0.82n), described cap layer 305 comprises the gallium nitride of P type doping, and described contact layer 306 comprises the aluminium gallium nitride alloy (Al of P type doping
0.09ga0
.91n).
Preferably, form lens arrangement (as shown in Figure 7) on described contact layer 306, the method for the lens arrangement of described formation contact layer comprises: first, on contact layer 306, forming thickness is 2～4 μ m, and diameter is the circular photoresist platforms of 50～200 μ m; Afterwards, in temperature is the scope of 150 ℃～200 ℃, to described circular photoresist platform baking, described circular photoresist platform is under the glass transition temperature higher than photoresist, because capillary effect forms spherical crown shape; Last photoresist of take described spherical crown shape is mask, and described contact layer 306 is carried out to ion beam etching, and forming thickness is the lens arrangement of 3～5 μ m.
Preferably, continuation forms successively resilient coating 303 with reference to figure 6 above described silicon carbide substrates 302, active layer 304, after cap layer 305, below described silicon carbide substrates 302, form heat dissipating layer 301, conventionally adopt thermocompression bonding mode below silicon carbide substrates 302, to form heat dissipating layer 301, the material of described heat dissipating layer 301 comprises titanium, aluminium, silver, any one in gold and alloy thereof, described heat dissipating layer 301 can conduct light-emitting diode by the heat in silicon carbide substrates 302, also for the light that sees through silicon carbide substrates 302 is reflexed to exiting surface, can improve the light utilization efficiency of light-emitting diode.
With reference to figure 8, execution step s3, the opening of described groove 320 is towards exiting surface, and in this specific embodiment, the bottom of groove 320 is positioned at resilient coating 303, can guarantee that like this light that active layer 305 sends is incident in groove 320.In addition, the angle theta of described groove 320 sidewalls and bottom is 120 °～150 °, and preferably, described angle theta is 135 °, and the light that the sidewall of described groove can send active layer 305 reflexes to exiting surface.Particularly, adopt dry etching method to form described groove 320.
With reference to figure 9, execution step s4, to the interior filling light transmissive material of groove 320, described light transmissive material is epoxy resin.In the present embodiment, after populated light transmissive material, also comprise: in temperature, be within the scope of 150 ℃～200 ℃, light transmissive material described in high-temperature baking, make described light transmissive material comprise lens arrangement in the light exit direction of light-emitting diode, thereby form the translucent element 309 that comprises lens arrangement.
Contact layer 306 and the lens arrangement of translucent element 309 in exiting surface direction, can assemble the light that active layer 304 sends, thereby improve the brightness of light-emitting diode.
As shown in figure 10, described method is also included in and on contact layer 306, between lens arrangement, forms the first electrode 310, described the first electrode 310 comprises for connecting the first electrode link 307 of positive source, the material of the first electrode 310 is the electric conducting materials such as gold, nickel, by deposits conductive material on the contact layer between lens arrangement, then the method by chemical etching forms the first electrode 310.
Described method is also included in coating fluorescent powder (not shown) on the lens arrangement of contact layer 306 and/or the lens arrangement of translucent element 309, and particularly, described fluorescent material comprises the yttrium-aluminium-garnet (Ce of doped with cerium
3+: YAG), for obtaining white light.
It should be noted that, above-described embodiment be take blue LED as example, but the present invention is not restricted to this, and above-described embodiment can also be red light emitting diodes, yellow light-emitting diode, those skilled in the art can, according to above-described embodiment, modify, replace and be out of shape the present invention.
To sum up, the invention provides a kind of light-emitting diode and manufacture method thereof, described light-emitting diode comprises the translucent element that extends to active layer, and the light that active layer sends sees through the exiting surface that translucent element arrives light-emitting diode on the one hand, has improved light utilization efficiency.
In addition, light-emitting diode also comprises the lens arrangement that is positioned at exiting surface, for converging ray, has improved the brightness of light-emitting diode.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (19)
1. a light-emitting diode, is characterized in that, comprising:
Silicon carbide substrates;
Be positioned at successively resilient coating, active layer, the cap layer of silicon carbide substrates top;
Described light-emitting diode also comprises a plurality of grooves, the degree of depth of described groove at least extends to breaker topping from described cap layer, described trenched side-wall and channel bottom angle are 120 °～150 °, and described trenched side-wall reflexes to the exiting surface of light-emitting diode for the light that active layer is sent;
Described light-emitting diode also comprises the translucent element of the epoxide resin material that is positioned at described groove, and for making light that active layer sends be transmitted through the exiting surface of light-emitting diode, described translucent element comprises lens arrangement in light emitting diode light exit direction.
2. light-emitting diode as claimed in claim 1, is characterized in that, also comprises the heat dissipating layer that is positioned at described silicon carbide substrates below.
3. light-emitting diode as claimed in claim 1, is characterized in that, also comprises the contact layer that is positioned at cap layer top.
4. light-emitting diode as claimed in claim 3, is characterized in that, described contact layer comprises lens arrangement in the light exit direction of light-emitting diode.
5. light-emitting diode as claimed in claim 4, is characterized in that, also comprises the first electrode, and wherein, described contact layer comprises a plurality of lens arrangements,
The first electrode is on contact layer, between lens arrangement, and described the first electrode comprises for connecting the first electrode link of positive source.
6. light-emitting diode as claimed in claim 1, is characterized in that, the lens arrangement of described translucent element is coated with fluorescent material in light exit direction.
7. light-emitting diode as claimed in claim 4, is characterized in that, the lens arrangement of described contact layer is coated with fluorescent material in light exit direction.
8. a manufacture method for light-emitting diode, is characterized in that, comprising: silicon carbide substrates is provided;
Above described silicon carbide substrates, form successively resilient coating, active layer, cap layer;
Form and at least from cap layer, extend to the groove of breaker topping, described trenched side-wall and channel bottom angle are 120 °～150 °, and described trenched side-wall reflexes to the exiting surface of light-emitting diode for the light that active layer is sent;
To the light transmissive material of filling epoxy resin in groove, described light transmissive material is for making light that active layer sends be transmitted through the exiting surface of light-emitting diode;
Make the top of described light transmissive material be lens arrangement, form the translucent element that comprises lens arrangement.
9. manufacture method as claimed in claim 8, is characterized in that, described resilient coating comprises the gallium nitride of N-type doping; Active layer comprises multiple quantum well active layer, and described multiple quantum well active layer comprises InGaN; Described cap layer comprises the gallium nitride of P type doping.
10. manufacture method as claimed in claim 8, is characterized in that, described resilient coating comprises the aluminium gallium nitride alloy of N-type doping; Active layer comprises the aluminium gallium nitride alloy of P type doping, and described cap layer comprises the gallium nitride of P type doping.
11. manufacture methods as claimed in claim 8, it is characterized in that, also be included in after described silicon carbide substrates top forms resilient coating, active layer, cap layer successively, below described silicon carbide substrates, form heat dissipating layer, the material of described heat dissipating layer comprises any one in titanium, aluminium, silver, gold and alloy thereof.
12. manufacture methods as claimed in claim 9, is characterized in that, after being also included in formation cap layer, before forming groove, on cap layer, form contact layer, and described contact layer comprises the gallium nitride of P type doping.
13. manufacture methods as claimed in claim 10, is characterized in that, after being also included in formation cap layer, before forming groove, on cap layer, form contact layer, and described contact layer comprises the aluminium gallium nitride alloy of P type doping.
14. manufacture methods as described in claim 12 or 13, is characterized in that, after forming contact layer, form lens arrangement on contact layer.
15. manufacture methods as claimed in claim 14, is characterized in that, the step that forms lens arrangement on contact layer comprises:
On contact layer, by photoetching, form a plurality of circular photoresist platforms;
Described circular photoresist platform is toasted at 150 ℃～200 ℃ temperature, make described circular photoresist platform become spherical crown shape photoresist;
The described spherical crown shape photoresist of take is mask, and contact layer forms lens arrangement described in ion beam etching.
16. manufacture methods as claimed in claim 8, is characterized in that, the step that forms the translucent element that comprises lens arrangement comprises:
In temperature, be within the scope of 150 ℃～200 ℃, light transmissive material described in high-temperature baking, makes the top of described light transmissive material be lens arrangement.
17. manufacture methods as claimed in claim 14, is characterized in that, contact layer comprises a plurality of lens arrangements, after filling light transmissive material, on contact layer, between lens arrangement, form the first electrode that comprises the first electrode link.
18. manufacture methods as claimed in claim 14, is characterized in that, are also included in coating fluorescent powder on the lens arrangement of contact layer.
19. manufacture methods as claimed in claim 16, is characterized in that, are also included in coating fluorescent powder on the lens arrangement of translucent element.
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| CN201010503792.6A CN102130251B (en) | 2010-09-28 | 2010-09-28 | Light emitting diode (LED) and manufacturing method thereof |
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|---|---|---|---|
| CN201010503792.6A CN102130251B (en) | 2010-09-28 | 2010-09-28 | Light emitting diode (LED) and manufacturing method thereof |
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| CN102130251B true CN102130251B (en) | 2014-09-03 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1347569A (en) * | 1999-03-01 | 2002-05-01 | 松下电器产业株式会社 | Flat panel solid state light source |
| CN1423842A (en) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | Enhanced light extration in LEDS through the use of internal and external optical elements |
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| JP4235440B2 (en) * | 2002-12-13 | 2009-03-11 | キヤノン株式会社 | Semiconductor device array and manufacturing method thereof |
| US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
| EP1652238B1 (en) * | 2003-08-08 | 2010-10-27 | Kang, Sang-kyu | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
| US8110838B2 (en) * | 2006-12-08 | 2012-02-07 | Luminus Devices, Inc. | Spatial localization of light-generating portions in LEDs |
| TW201032350A (en) * | 2009-02-20 | 2010-09-01 | Univ Nat Central | A manufacturing method of LED |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1347569A (en) * | 1999-03-01 | 2002-05-01 | 松下电器产业株式会社 | Flat panel solid state light source |
| CN1423842A (en) * | 1999-12-03 | 2003-06-11 | 美商克立光学公司 | Enhanced light extration in LEDS through the use of internal and external optical elements |
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