CN102067298A - Packaging structure and method for manufacturing packaging structure - Google Patents

Packaging structure and method for manufacturing packaging structure Download PDF

Info

Publication number
CN102067298A
CN102067298A CN2009801246434A CN200980124643A CN102067298A CN 102067298 A CN102067298 A CN 102067298A CN 2009801246434 A CN2009801246434 A CN 2009801246434A CN 200980124643 A CN200980124643 A CN 200980124643A CN 102067298 A CN102067298 A CN 102067298A
Authority
CN
China
Prior art keywords
assembling structure
electrode
electronic devices
components
metal nanoparticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009801246434A
Other languages
Chinese (zh)
Other versions
CN102067298B (en
Inventor
笹冈达雄
丰田香
西胁健太郎
池内宏树
那须博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN102067298A publication Critical patent/CN102067298A/en
Application granted granted Critical
Publication of CN102067298B publication Critical patent/CN102067298B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H01L2224/83207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0367—Metallic bump or raised conductor not used as solder bump
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2036—Permanent spacer or stand-off in a printed circuit or printed circuit assembly
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1178—Means for venting or for letting gases escape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)

Abstract

Provided is a packaging structure from which a gas generated in heat treatment can be efficiently released to the external. A packaging structure (10) is provided with: a substrate (1) having electrodes (2a, 2b); an electronic component (3) having electrodes (21a, 21b); connecting sections (15a, 15b) which electrically connect the electrodes (2a, 2b) of the substrate (1) and the electrodes (21a, 21b) of the electronic component (3) and fix the electronic component (3) on a surface of the substrate (1); and a protruding section (4) which abuts to the electrode (2a) of the substrate (1) and to the electrode (21a) of the electronic component (3) and is used as a spacer.

Description

The manufacture method of assembling structure and assembling structure
Technical field
The present invention relates to the manufacture method of assembling structure and assembling structure.
Background technology
As the method that electronic devices and components such as semiconductor element is installed on the base materials such as pottery or polyimides, the method that metal nanoparticle is used as grafting material is attracted attention.So-called metal nanoparticle is meant that average grain diameters such as Au, Ag, Cu are less than the metallic of the size of 50nm (below be designated as metal nanoparticle).Because this metal nanoparticle is higher than the surface activity of bulk material because of microminiaturization has, therefore can carry out combination at low temperatures, and, make size become big if carry out combination, then can become the high melt point the same with bulk material.Therefore, can expect that the method that metal nanoparticle is used as grafting material need reduce thermal pressure and need after the installation to improve on the goods of heat resisting temperature when electronic devices and components are installed is able to extensive utilization.In addition, compare with the conducting paste material that does not use metal nanoparticle, for the conducting paste material that has used metal nanoparticle, because metal carries out combination and does not contact, therefore resistivity is lower, can also improve bond strength, thereby realizes better engaging.Metal nanoparticle is used as like this is grafting material, the installation process of existing electronic devices and components such as Figure 16～shown in Figure 180.
The vertical view of the substrate in Figure 16 (a), Figure 17 (a), Figure 18 (a) expression installation procedure, Figure 16 (b), Figure 17 (b), Figure 18 (b) are represented the cutaway view between the GG ' of Figure 16 (a), Figure 17 (a), Figure 18 (a) respectively.
At first, shown in Figure 16 (a) and (b), prepared to be formed with on the base material substrate 1001 of conductor wiring 1002.Then, shown in Figure 17 (a) and (b), on the components and parts installation site of conductor wiring 1002, use the thickener material (hereinafter referred to as metal nanoparticle thickener material) that contains metal nanoparticle to form grafting material portion 1013.
Then, shown in Figure 18 (a) and (b), make the electrode 1014 of electronic devices and components 1003 relative, electronic devices and components 1003 are loaded on the substrate 1001 with grafting material portion 1013.Then, grafting material portion 1013 is applied hot homenergic, thereby make the 1013 combined curing of grafting material portion and become junction surface 1015, the electrode 1014 of electronic devices and components 1003 is engaged with the conductor wiring 1002 of substrate 1001.Thus, shown in Figure 18 (a) and (b), make the order of electrode 1014 with electronic devices and components 1003, junction surface 1015, conductor wiring 1002 and carried out the assembling structure that stratiform connects.
In addition, in order to prevent metal nanoparticle generation polymerization, utilize dispersant that metal nanoparticle thickener material is carried out stabilisation.Then, metal nanoparticle thickener material is applied hot homenergic, thereby utilize oxygen that the dispersant in the grafting material portion 1013 is decomposed, make metal nanoparticle adhere and form junction surface 1015 each other.
Proposed when the LED as electronic devices and components is installed, used the scheme (for example, with reference to patent documentation 1) of such metal nanoparticle thickener material.In this patent documentation 1,, the metal nanoparticle thickener is solidified by applying supersonic oscillations.Yet, because under the situation of using supersonic oscillations, there are the damage electronic devices and components or engage inadequate situation, therefore, the scheme that has proposed when using supersonic oscillations, to utilize heating same as described above to be cured again or be cured with heating replacement supersonic oscillations same as described above.
Patent documentation 1: the Japan Patent spy opens the 2005-136399 communique
Summary of the invention
But, in so existing assembling structure, under the less situation of the electrode area of substrate, electronic devices and components, can escape in the air because of the gases such as exhaust that produce are heated in grafting material portion 1013, but under the bigger situation of electrode area, can cause gases such as exhaust to escape in the air.Be elaborated below.
Figure 19 (a)～Figure 19 (f) is the figure of the manufacture method of the assembling structure 100 of expression when the LED as electronic devices and components installed.Under the situation of use as the LED element of electronic devices and components, its electrode of substrate is formed by electrode 2a that varies in size and electrode 2b shown in Figure 19 (a).
Shown in Figure 19 (b), metal nanoparticle thickener material is coated on these electrodes 2a, the 2b, forms the grafting material 13a of portion, 13b.
On the other hand, the electronic devices and components 3 as LED have and the corresponding electrode 21a of electrode 2a, the 2b of substrate 1,21b.Then, shown in Figure 19 (c), with 16 pairs of electronic devices and components 3 of lift-launch instrument, adsorb with the face of the opposite side of a side that is formed with electrode 21a, 21b, electronic devices and components 3 are arranged at the 13a of grafting material portion, 13b last (Figure 19 (d))., carry out drying and heat treatment, make the metal nanoparticle thickener material cured of the 13a of grafting material portion, 13b and form junction surface 15a, 15b, thereby make assembling structure 100 (Figure 19 (e)) thereafter.
In the process of when carrying out this heat treatment dispersant being decomposed, owing to need heat and oxygen, therefore, compare with the middle body of grafting material portion, oxygen is easier to be provided to and the contacted peripheral part of ambient atmos.Therefore, compare with the middle body of grafting material portion, peripheral part has the tendency that curing rate accelerates.Under the situation that the ordinary semiconductor chip is used as electronic devices and components, along with miniaturization, the size of the electrode of semiconductor chip is that catercorner length is below tens μ m, the width of wiring also is below the 100 μ m, therefore, the curing rate of the peripheral part of grafting material portion and middle body does not have difference substantially.Therefore, exhaust can be overflowed from metal nanoparticle thickener material.
Yet, because electrode 2a, the 21a of LED have the size that catercorner length is several mm, therefore, shown in the enlarged drawing of the 13a of grafting material portion of Figure 19 (f), the peripheral part 13e of the 13a of grafting material portion can solidify earlier, middle body solidifies again afterwards, thereby makes near the exhaust 22 that is produced the middle body be difficult to overflow to the outside of the 13a of grafting material portion.Therefore, can take place residually easily in the junction surface 15 after the heat treatment has exhaust, thereby causes taking place to engage condition of poor.
In addition, under the situation of the thickness attenuation that makes the 13a of grafting material portion, the area of part reduces because the exhaust that the central portion branch produces is overflowed, the therefore easier residual exhaust that has.
The present invention considers the problem of existing assembling structure, and its purpose is, the assembling structure that a kind of exhaust that is produced can make heat treatment efficiently the time overflows and the manufacture method of assembling structure are provided.
In order to address the above problem, a first aspect of the present invention is an assembling structure, comprising:
Substrate;
Electronic devices and components;
Described electronic devices and components are fixed in the junction surface surface, that make by metal nanoparticle thickener material of described substrate; And
The member that connects with described electronic devices and components and described substrate and use as sept.
In addition, a second aspect of the present invention is, in the described assembling structure of a first aspect of the present invention,
Described member is embedded in the middle body at described junction surface, and the material that is higher than described metal nanoparticle thickener material by pyroconductivity is made.
In addition, a third aspect of the present invention is, in the described assembling structure of a first aspect of the present invention,
Described member is embedded in the middle body at described junction surface, for the member of oxygen is provided to described metal nanoparticle thickener material.
In addition, a fourth aspect of the present invention is, in first～third aspect of the present invention in the described assembling structure of any one party face,
Described substrate has electrode,
Described electronic devices and components have electrode,
Described junction surface is electrically connected the electrode of described substrate with the electrode of described electronic devices and components,
The electrode of described member and described electronic devices and components and the electrode of described substrate connect.
In addition, a fifth aspect of the present invention is, in the described assembling structure of a fourth aspect of the present invention,
Described member is formed by the electrode of described substrate or the concavo-convex of electrode surface of described electronic devices and components.
In addition, a sixth aspect of the present invention is, in the described assembling structure of a first aspect of the present invention,
Described junction surface has heat sinking function.
In addition, a seventh aspect of the present invention is, in first～third aspect of the present invention in the described assembling structure of any one party face,
Be provided with a plurality of described members,
Described a plurality of member is provided with intensively at described middle body than the peripheral part at described junction surface.
In addition, a eighth aspect of the present invention is, in the described assembling structure of a fourth aspect of the present invention,
The electrode of described substrate and the electrode of described electronic devices and components have at least a part to be oppositely arranged,
Described junction surface is arranged between the part of described that be oppositely arranged, described electrode at least.
In addition, a ninth aspect of the present invention is, of the present invention first or the described assembling structure of second aspect in,
Described member is formed by salient point.
In addition, a tenth aspect of the present invention is, in first～third aspect of the present invention in the described assembling structure of any one party face,
Described member uses the thickener material that comprises conducting objects to make.
In addition, a eleventh aspect of the present invention is, in the described assembling structure of a third aspect of the present invention,
Described member uses the thickener material that metal oxide and mixed with resin are formed to make.
In addition, a twelveth aspect of the present invention is, in the described assembling structure of a third aspect of the present invention,
Described member uses metal oxide to make.
In addition, a thirteenth aspect of the present invention is, in first～third aspect of the present invention in the described assembling structure of any one party face,
Described member is made by the material that curing temperature is lower than the described metal nanoparticle thickener material of making described junction surface.
In addition, a fourteenth aspect of the present invention is, in first～third aspect of the present invention in the described assembling structure of any one party face,
Described metal nanoparticle thickener material comprises the following metallic of 50nm.
In addition, a fifteenth aspect of the present invention is, in the described assembling structure of a fourth aspect of the present invention,
Some electrodes in the electrode of described substrate or the electrode of described electronic devices and components, with the corresponding part of middle body at described junction surface, by providing the material of oxygen to be formed to described metal nanoparticle thickener material.
In addition, a sixteenth aspect of the present invention is the manufacture method of assembling structure,
Described assembling structure comprises: substrate;
Electronic devices and components;
Described electronic devices and components are fixed in the junction surface surface, that make by metal nanoparticle thickener material of described substrate; And
As the sept that connects with described electronic devices and components and described substrate and be arranged at the member at described junction surface, it is characterized in that, comprising:
Member forms operation, and this member forms operation will be formed at described substrate or described electronic devices and components as the member that described sept uses;
Painting process, this painting process is coated described substrate or described electronic devices and components with described metal nanoparticle thickener material;
Arrangement step, this arrangement step is configured described substrate and described electronic devices and components, to clip the described metal nanoparticle thickener material of described coating; And
Heat treatment step, this heat treatment step by described metal nanoparticle thickener material is heated, are cured described metal nanoparticle thickener material, to form described junction surface after described arrangement step.
In addition, a seventeenth aspect of the present invention is, in the manufacture method of the described assembling structure of a sixteenth aspect of the present invention,
Described member is arranged at the middle body at described junction surface,
In described heat treatment step, the material of making described member heats up faster than described metal nanoparticle thickener material.
In addition, a eighteenth aspect of the present invention is, in the manufacture method of the described assembling structure of a sixteenth aspect of the present invention,
Described member is arranged at the middle body at described junction surface,
In described heat treatment step, described member provides oxygen to described metal nanoparticle thickener material.
According to the present invention, can provide a kind of and can make the exhaust that when heat treatment, is produced efficiently to the assembling structure of outside effusion and the manufacture method of assembling structure.
Description of drawings
Fig. 1 (a) is the sectional structure chart of the assembling structure 10 of execution mode 1 involved in the present invention, and Fig. 1 (b) is the cutaway view between the AA ' of Fig. 1 (a), and Fig. 1 (c) is the rearview of electronic devices and components 3.
Fig. 2 (a)～(e) is the figure of manufacture method that is used to illustrate the assembling structure 10 of execution mode involved in the present invention 1.
Fig. 3 is the figure that is illustrated in an example of the state that protuberance and electrode connect in the assembling structure of execution mode involved in the present invention 1.
Fig. 4 is the sectional structure chart as the assembling structure 20 of the variation of execution mode involved in the present invention 1.
Fig. 5 (a) is the sectional structure chart as the assembling structure 30 of the variation of execution mode involved in the present invention 1, and Fig. 5 (b) is the cutaway view between the AA ' of Fig. 5 (a).
Fig. 6 (a) is the sectional structure chart as the assembling structure 31 of the variation of execution mode involved in the present invention 1, and Fig. 6 (b) is the cutaway view between the AA ' of Fig. 6 (a).
Fig. 7 is the sectional structure chart as the assembling structure 32 of the variation of execution mode involved in the present invention 1.
Fig. 8 is the sectional structure chart as the assembling structure 35 of the variation of execution mode involved in the present invention 1.
Fig. 9 is the sectional structure chart as the assembling structure 36 of the variation of execution mode involved in the present invention 1.
Figure 10 is the sectional structure chart of the assembling structure 33 of execution mode 2 involved in the present invention.
Figure 11 (a)～(f) is the figure of manufacture method that is used to illustrate the assembling structure 33 of execution mode involved in the present invention 2.
Figure 12 is the figure of variation of manufacture method that is used to illustrate the assembling structure 33 of execution mode involved in the present invention 2.
Figure 13 is the sectional structure chart of the assembling structure 34 of execution mode 3 involved in the present invention.
Figure 14 (a)～(f) is the figure of manufacture method that is used to illustrate the assembling structure 34 of execution mode involved in the present invention 3.
Figure 15 is the sectional structure chart of the assembling structure 60 of execution mode 4 involved in the present invention.
Figure 16 (a), Figure 16 (b) are the figure that is used to illustrate the manufacture method of existing assembling structure.
Figure 17 (a), Figure 17 (b) are the figure that is used to illustrate the manufacture method of existing assembling structure.
Figure 18 (a), Figure 18 (b) are the figure that is used to illustrate the manufacture method of existing assembling structure.
Figure 19 (a)～(f) is the figure that is used to illustrate the manufacture method of existing assembling structure.
Embodiment
Below, in detail each execution mode involved in the present invention is described based on accompanying drawing.
(execution mode 1)
Fig. 1 (a) is the sectional structure chart of the assembling structure of expression embodiments of the present invention 1.
The electronic devices and components 3 that the assembling structure 10 of present embodiment comprises substrate 1 and is installed on substrate 1 surface.The surface of this substrate 1 is formed with electrode 2a, 2b.In addition, use thermal diffusivity preferably the substrate of aluminium oxide as substrate 1.In addition, electronic devices and components 3 are LED, have two electrode 21a, 21b, and these two electrodes are equivalent to the P utmost point and the N utmost point.
In addition, the electrode 21b of the electrode 21a of electrode 2a and electronic devices and components and electrode 2b and electronic devices and components engages by junction surface 15a, 15b respectively.Junction surface 15a, 15b are by metal nanoparticle thickener material is heat-treated and made.
In addition, in the 15a of junction surface, be provided with the protuberance 4 of an example that is equivalent to member of the present invention.This protuberance 4 connects with the electrode 2a of substrate 1 and the electrode 21a of electronic devices and components 3, has as during fabrication, makes interval between the electrode 21a of the electrode 2a of substrate 1 and electronic devices and components 3 keep the effect of certain sept.
In addition, the material that forms protuberance 4 uses than the metal nanoparticle thickener material that is used to make junction surface 15a heat up material faster, the i.e. higher material of pyroconductivity.
Fig. 1 (b) is the vertical view of substrate 1 among the expression assembling structure 10, junction surface 15a, 15b and protuberance 4.In addition, Fig. 1 (c) is the vertical view of electronic devices and components 3 among the expression assembling structure 10.In addition, Fig. 1 (b) is equivalent to be positioned at the cutaway view of the assembling structure 10 of position between the AA ' of Fig. 1 (a).In addition, the sectional position of Fig. 1 (a) is represented by the BCDEF line in Fig. 1 (b).
Shown in Fig. 1 (a)～(c), junction surface 15a is formed at the electrode 2a part relative with electrode 21a, and junction surface 15b is formed at the electrode 2b part relative with electrode 21b.In addition, shown in Fig. 1 (b), three protuberances 4 are located at the middle body 70 of this junction surface 15a.In addition, the related middle body of the application not only is meant central authorities, also comprises near the central authorities.In addition, in the drawings, the peripheral part of junction surface 15a is represented with label 71.
Then, the manufacture method to the assembling structure 10 of present embodiment describes.Fig. 2 (a)～(e) is the figure of manufacture method that is used to illustrate the assembling structure 10 of present embodiment.
At first, shown in Fig. 2 (a), be formed at formation protuberance 4 on the lip-deep electrode 2a of substrate 1.Electrode 21a, the 21b of this electrode 2a, 2b and electronic devices and components 3 formed by for example gold.In addition, electronic devices and components 3 are that for example cross sectional shape is the LED element of catercorner length 10mm for size.In addition, protuberance 4 is formed by the au bump made from lead wire connecting apparatus.In addition, the size of a protuberance 4 can be made as, and for example, the diameter in Fig. 2 middle and lower part is about 50～80 μ m, and upper part diameter is 20～30 μ m, and height is 30 μ m.This operation that forms protuberance 4 is equivalent to the example that member of the present invention forms operation.
Then, shown in Fig. 2 (b), metal nanoparticle thickener material is coated on electrode 2a, the 2b of substrate 1, forms the grafting material 13a of portion, 13b.In addition, for example can use will as conductive compositions, be the golden particulate of metal nanoparticle be mixed in the solvent and the material that forms as metal nanoparticle thickener material.In addition, in solvent, utilize dispersant that metal nanoparticle is covered, for example can use the tetradecane as solvent, can use alkylamine etc. for example, more than one have and can join the compound of base of key as dispersant with metallic element.In addition, in metal nanoparticle thickener material, contain the particulate of gold of for example average grain diameter 3～7nm of 50wt%, the density of golden particulate can be set at 1.6g/cc.In addition, the viscosity of this metal nanoparticle thickener material is preferably and is set at 20～50mPas.This metal nanoparticle thickener material is equivalent to make an example of the employed material in junction surface of the present invention, is equivalent to an example of grafting material of the present invention.
In addition, for example can use ink-jet method, spin-coating method or mouthful pattern rubbing method etc. as coating process.Use such coating process, protuberance 4 is covered, thereby form the grafting material 13a of portion, 13b, make its thickness become thicker through two to three times the operations of smearing.In addition, metal nanoparticle thickener viscosity of material is lower, easily adopts the coating that utilizes ink-jet method.This operation that metal nanoparticle thickener material is coated with is equivalent to an example of painting process of the present invention.
Afterwards, shown in Fig. 2 (c), keep, and it is put to the above-mentioned grafting material 13a of portion, 13b with 16 pairs of electronic devices and components 3 of lift-launch instrument.Then, shown in Fig. 2 (d), electronic devices and components 3 are pushed to the 13a of grafting material portion, 13b, connected until the upper end of electrode 21a and protuberance 4.This operation is equivalent to an example of arrangement step of the present invention.Here, in this manual, so-called " butt ", not only comprise the protuberance 4 direct and contacted situations of electrode 21a, also comprise shown in the partial enlarged drawing of Fig. 3, the residual situation that a spot of metal nanoparticle thickener material is arranged is meant the state that pushing of electronic devices and components 3 put up a resistance between protuberance 4 and electrode 21a.In addition, Fig. 3 is the partial enlarged drawing of Fig. 2 (d), and residual have the part of a spot of metal nanoparticle thickener material to represent with label S.
At last, utilize heat treatment that the 13a of grafting material portion, 13b are cured, form junction surface 15a, 15b, thereby make the assembling structure 10 shown in Fig. 2 (e).As this condition of cure, the assembling structure 10 ' of Fig. 2 (d) state is inserted recirculation furnace, be warming up to after 100 ℃ with for example 5 ℃/minute programming rate, keep 100 ℃ state 10 minutes.This operation is equivalent to an example of heat treatment step of the present invention.
In the present embodiment, when electronic devices and components 3 being put to the 13a of grafting material portion, 13b, protuberance 4 plays the function as sept, can keep the interval between the electrode 21a of electrode 2a and electronic devices and components certain.Therefore, when heat treatment, can make because of the dispersant composition among the 13a of grafting material portion being heated the exhaust that produces and overflow to the outside from the peripheral part 71 (with reference to Fig. 2 (d)) of the 13a of grafting material portion.
Suppose that protuberance 4 does not exist, then when putting electronic devices and components 3, because the flexibility of metal nanoparticle thickener material can cause the electrode 21a of electrode 2a and electronic devices and components to become too approaching, therefore thickness attenuation, thus make exhaust be difficult to overflow to the outside from the peripheral part 13e of the 13a of grafting material portion.Therefore, among the junction surface 15a after heat treatment, may form pore, thereby weaken the bond strength of substrate 1 and electronic devices and components 3.In addition, when electronic devices and components 3 work, it is unstable that joint may become owing to the influence of residual exhaust.
Relative with it, as present embodiment, protuberance 4 plays the function as sept, therefore, because the electrode 2a of substrate 1 and the electrode 21a of electronic devices and components 3 can be too not approaching, the metal nanoparticle thickener material that therefore can suppress to form the 13a of grafting material portion is therebetween contacted with adjacent electrode 2b, 21b and the metal nanoparticle thickener material between electrode 2b, the 21b from extruding between electrode, thereby is short-circuited.In addition, the metal nanoparticle thickener material that can also suppress the 13b of grafting material portion of electrode 2b, 21b one side is extruded.
In addition, because the middle body 70 of the 13a of grafting material portion is provided with protuberance 4, therefore, the metal nanoparticle thickener material that is present in middle body 70 tails off, and can suppress the generation of exhaust itself.
In addition, in the present embodiment, metal salient point forms protuberance 4 because utilization heats up faster than metal nanoparticle thickener material, and therefore, protuberance 4 heats up faster than the 13a of grafting material portion, 13b when heat treatment.Therefore, when heat treatment, owing to begin to solidify from the metal nanoparticle thickener material of the middle body 70 that is positioned at protuberance 4 peripheries, gases such as beginning sintering and generation exhaust, heat slowly transmits and causes sintering and produce exhaust to peripheral part 71 from middle body 70 beginning, therefore, the exhaust that is produced is overflowed to the outside from the peripheral part 71 of the 13a of grafting material portion.
In the present embodiment, by using protuberance 4 as sept, between electrode 2a and electrode 21a, to guarantee a certain amount of space, and be provided as the protuberance 4 that utilizes heat transmission to produce the starting point of exhaust, can control the time and the position that produce exhaust, thereby exhaust is overflowed to peripheral part 71 from the middle body 70 of grafting material portion, can make joint more reliable.
In addition, if to the assembling structure 10 of present embodiment with do not form protuberance 4 and the assembling structure made compares, then in the assembling structure of making not forming protuberance 4, residual among the 13a of grafting material portion have a bubble, and bad connection etc. has taken place.
In addition, can protuberance 4 not used as the starting point of utilizing heat transmission to produce exhaust yet, and only use as sept.In this case, also can not use than metal nanoparticle thickener material and heat up material (material that pyroconductivity is higher) faster as the material that forms protuberance 4.
In addition, can be not protuberance 4 not be used as sept yet, and only use as the starting point of utilizing heat transmission to produce exhaust.In this case, the two links to each other not need to make protuberance 4 and electrode 2a and electrode 21a, as long as contact with any one party among both at least and heat is transmitted.An example of the assembling structure shown in Fig. 4 under this situation.Fig. 4 is the sectional structure chart of assembling structure 20.In addition, to the structure mark identical label substantially identical, too for following accompanying drawing with assembling structure 10.
Middle body 70 at junction surface 15a in assembling structure 20 is formed with three protuberances 24, and 2a joins with electrode.This protuberance 24 does not contact with the electrode 21a of electronic devices and components 3, does not play the effect as the sept at the interval that keeps electrode 2a and electrode 21a.
Because the protuberance 24 of the assembling structure 20 of the structure that employing is such is identical with present embodiment, use than metal nanoparticle thickener material heat up faster, material such as au bump, therefore, when heat treatment, metal nanoparticle thickener material begins to solidify and produce exhaust with protuberance 24 as starting point, thereby can when solidifying, exhaust be overflowed from peripheral part 71 in grafting material portion (state before junction surface 15a solidifies).
And, because protuberance 24 do not contact with the electrode 21a of electronic devices and components 3, therefore can reduce when making physical damnification to electronic devices and components 3.But, low if the height of protuberance 24 is spent, then owing to the 24 shared ratios of the protuberance in the middle body 70 reduce, the increasing proportion that metal nanoparticle thickener material is shared, so the generation quantitative change of the exhaust in the middle body 70 is big.Therefore, the height of protuberance 24 is more preferably high as far as possible.
In addition, in present embodiment 1, protuberance 4 is arranged at the middle body 70 of junction surface 15a, but do not using as the starting point of utilizing heat transmission to produce exhaust, and under the situation about only using as sept, also protuberance 4 can be arranged at the peripheral part 71 of junction surface 15a, and not be arranged at its middle body 70.
And, can also be shown in the sectional structure chart of the assembling structure 35 of Fig. 5, protuberance is arranged at the outside of junction surface 15a, but not the inboard of junction surface 15a.In assembling structure shown in Figure 5 35, the arranged outside of junction surface 15a has protuberance 46.This protuberance 46 is arranged on the electrode 2a, and the upper end of protuberance 46 contacts with electronic devices and components 3 '.Even owing to adopt such structure, protuberance 46 also can play the function as sept, thereby can keep the interval between electrode 21a and the electrode 2a certain, therefore, the exhaust that is produced in the time of can making heat treatment is efficiently overflowed to the outside.In addition, protuberance 46 also can directly be arranged on the substrate 1, but not on the electrode 2a.
But the middle body 70 owing to protuberance 4 being arranged at the 15a of grafting material portion can make the metal nanoparticle thickener material that is present in middle body 70 tail off, and therefore, can suppress the generation of exhaust itself, so even more ideal.
In addition, in the above-described embodiment, programming rate is set as for example 5 ℃/minute, but also can suitably change according to the difference of the composition that constitutes metal nanoparticle thickener material.But if programming rate is too fast, then the solvent grafting material portion in is understood bumping, thereby causes bubble can't be successfully to be overflowed between the electrode 2a of the electrode 21a of electronic devices and components and substrate.
In addition, in the present embodiment, shown in Fig. 2 (b), owing to use metal salient point as protuberance 4, pyroconductivity is higher, therefore, easily with the heat transferred of electronic devices and components 3 to substrate 1.Can wait with plating or wire-bonded and make this metal salient point.In addition, because the front end of metal salient point is sharp-pointed, therefore, space, past more top is big more, and the exhaust that is produced is easy more overflows to the outside.
In addition, protuberance 4 also can be formed at electronic devices and components 3 one sides but not substrate 1 one sides, but owing to may cause physical damnification to electronic devices and components 3, therefore more preferably is arranged at substrate 1 one sides.Particularly if electronic devices and components 3 are semiconductor, then because the miniaturization of inner wiring rule so have the structure more weak to impact physically, therefore, has effect for protuberance 4 being arranged at substrate 1 one sides.
In addition, in the present embodiment, metal nanoparticle thickener material is applied in substrate 1 one sides that are formed with protuberance 4, but also can be applied in electronic devices and components 3 one sides.
In addition, in the present embodiment, electrode 2a, 2b have relative respectively part with electrode 21a, 21b, but also can adopt not relative structure.In addition, in the present embodiment, 15 at junction surface is formed on the electrode, but junction surface 15 also can stride across the part that electrode is not set and form.In brief,, the electrode of substrate is electrically connected with the electrode of electronic devices and components, and electronic devices and components can be fixed in substrate surface and gets final product as long as form connecting portion.
In addition, in the present embodiment, be formed with three protuberances 4 on the middle body 70 of the 13a of grafting material portion, but be not limited thereto, also can adopt for example structure shown in the assembling structure 30 of Fig. 6 (a) and Fig. 6 (b).Fig. 6 (a) is the sectional structure chart of assembling structure 30, and Fig. 6 (b) is the cutaway view between the AA ' of Fig. 6 (a).In addition, the sectional position of Fig. 6 (a) is represented by the BCDEF line in Fig. 6 (b).Compare with the assembling structure 10 of present embodiment, also be formed with by the formed protuberance 4 of metal salient point on four angles of the peripheral part 71 at the junction surface 15 of assembling structure 30.In this assembling structure 30, to compare with the peripheral part 71 at junction surface 15, a plurality of protuberances 4 are arranged at the middle body 70 at junction surface 15 more thick and fast.By such configuration, can more stably guarantee interelectrode gap, thereby can make exhaust the exhaust at middle body 70 places of difficult effusion overflow to the outside.In addition,,, therefore, the exhaust that results from middle body 70 places is overflowed to the outside, thereby can suppress to produce in the junction surface 15 pores so the middle body 70 of the 13a of grafting material portion is faster than peripheral part 71 intensifications because the density of protuberance 4 is poor.In addition, salient point is identical with the salient point shown in the foregoing description.
In addition, be not limited to the structure of present embodiment, the middle body 70 at junction surface 15 also can only be provided with a protuberance 4.But, make protuberance 4 can integrally keep the interval between electrode 2a and the electronic devices and components electrode 21a certain in addition again, thereby exhaust is more easily run out of at several peripheries, therefore even more ideal.
In addition, protuberance also can be not limited to the size of the protuberance 4 of present embodiment, also a bigger protuberance can be set at the middle body 70 of the 13a of grafting material portion.Fig. 7 (a) is the sectional structure chart of assembling structure 31, and Fig. 7 (b) is the cutaway view between the AA ' of Fig. 7 (a).In addition, the sectional position of Fig. 7 (a) is represented by the BCDEF line in Fig. 7 (b).On assembling structure 31, the middle body 70 of junction surface 15a is formed with a bigger protuberance 40.Utilize this bigger protuberance 40, can the depth of parallelism of the electrode 21a of electrode 2a and electronic devices and components be limited, and can guarantee certain interval, thereby the gas that grafting material portion is produced in curing is overflowed.In addition, this protuberance 40 can utilize plating to make.In addition, need carry out planarization to the upper surface of protuberance 40.Protuberance 40 in this assembling structure shown in Figure 7 31 is used as the sept that keeps the interval between electrode 2a and the electrode 21a and utilizes heat transmission to produce the starting point of exhaust, but under the situation that only is used as the starting point of utilizing heat transmission generation exhaust, can not contact with electrode 21a yet.The cutaway view of the assembling structure 32 of this state is shown in Fig. 8.In addition, show not and the contacted protuberance 41 of electrode 21a.In addition, the sectional position of Fig. 8 is identical with Fig. 7 (a) position.
In addition, under the situation of assembling structure 10,20,30～32 and 35, need make protuberance according to different shape.In addition, under the situation of assembling structure 31,32, protuberance utilizes plating to make.
In addition, in the assembling structure 10 of present embodiment 1, protuberance is formed by metal salient point, but also can with the surface of electrode 2a, with the middle body 70 corresponding part 200a ' at junction surface 15 thus be processed into concavo-convex formation protuberance.Fig. 9 is the sectional structure chart of assembling structure 36.In assembling structure shown in Figure 9 36, be provided with middle body 70 and form irregular electrode 2a ', to replace the electrode 2a of aforesaid substrate 1.Protuberance 45 is by this concavo-convex formation.The processing method of this protuberance 45 is, at first processes, and the thickness of other parts except that the part 200a ' of electrode 2a ' is reduced.As this processing, can use cutting or grinding etc.Then, implement sandblast processing etc., can go up at part 200a ' and form concaveconvex shape by the part except that the part 200a ' of electrode 2a ' is hidden.
In addition, because electrode 2a ' formed by for example gold etc., so heat conductivity is better than metal nanoparticle thickener material.Therefore, can be used as by the concavo-convex formed protuberance 45 of electrode 2a ' and to utilize heat transmission to produce the starting point of exhaust, can promote to be arranged at the curing of the metal nanoparticle thickener material around the protuberance 45 of middle body 70.In addition, only protuberance 45 is being used as under the situation of sept, protuberance 45 also can not be formed at middle body 70.
In addition, as shown in Figure 9, be processed to form protuberance 45, formed protuberance but also can process by surface to the substrate 21a of electronic devices and components 3 by surface to the electrode 2a ' of substrate 1.
(execution mode 2)
Then, execution mode involved in the present invention 2 is described.
Figure 10 is the sectional structure chart of the assembling structure 33 in the execution mode 2 involved in the present invention.As shown in figure 10, different with execution mode 1 in the assembling structure 33 of present embodiment 2, central authorities that are arranged at junction surface 15 by the formed protuberance 43 of conducting paste material.In addition, to identical with the execution mode 1 in fact identical label of structure mark.In addition, Figure 10 is the cutaway view that is positioned at Fig. 1 (a) same position.In addition, this protuberance 43 is equivalent to an example of member of the present invention.
Then, the manufacture method to the assembling structure in the present embodiment 2 33 describes.
Figure 11 (a)～(f) is used for sectional structure chart that the method for making assembling structure 33 is described.
At first, shown in Figure 11 (a),, thereby form conducting paste material portion 44 at the upper surface coating conducting paste material of the electrode 2a of substrate 1.This conducting paste material is equivalent to an example that comprises the thickener material of conducting objects of the present invention.In addition, this conducting paste material is to contain for example silver-colored thickener material of silver, resin and curing agent etc., has used the material of curing temperature below the curing temperature of metal nanoparticle thickener material.In addition, in this conducting paste material, do not need as metal nanoparticle thickener material, to contain average grain diameter and be the metallic below the 50 μ m.
Then, shown in Figure 11 (b), metal nanoparticle thickener material is coated on electrode 2a, the 2b, covers conducting paste material portion 44, thereby forms the grafting material 13a of portion, 13b.Metal nanoparticle thickener material is coated with for this and the operation that forms the 13a of grafting material portion, 13b is equivalent to an example of painting process of the present invention.
Less than the temperature of the curing temperature of metal nanoparticle thickener material, promptly conducting paste material carried out the temperature of semi-solid preparation under heat, thereby as Figure 11 (c) shown in, only conducting paste material 44 semi-solid preparations formed protuberance 43 ' thereafter.This coating conducting paste material also makes its operation that is solidified to form protuberance 43 ' be equivalent to the example that member of the present invention forms operation.
Next, shown in Figure 11 (d), keep, and it is put to the above-mentioned grafting material 13a of portion, 13b with 16 pairs of electronic devices and components 3 of lift-launch instrument.Then, electronic devices and components 3 are pushed to the 13a of grafting material portion, 13b, until the upper end of its electrode 21a and protuberance 43 connect (with reference to Figure 11 (e)).This operation is equivalent to an example of arrangement step of the present invention.
At last, utilize to use the heat treatment of recirculation furnace to the protuberance 43 of semi-cured state ' and the 13a of grafting material portion, 13b be cured, form junction surface 15a, 15b, thereby make the assembling structure 33 shown in Figure 11 (f).This operation is equivalent to an example of heat treatment step of the present invention.In addition, by this heat treatment, the protuberance 43 ' of semi-cured state is than the first curing of the 13a of grafting material portion, 13b, thus formation protuberance 43.
Like this, by before the 13a of grafting material portion, 13b solidify, make conducting paste material portion 44 be solidified to form protuberance 43, thereby this protuberance 43 is used as the sept at the interval between the electrode 21a that keeps electrode 2a and electronic devices and components 3, can be in heat treatment step, the exhaust that is produced from the 13a of grafting material portion is overflowed to the outside.
In addition, because the middle body 70 of the 13a of grafting material portion is provided with protuberance 43, therefore, the metal nanoparticle thickener material that is present on the middle body 70 tails off, and can suppress the generation of exhaust itself.
In addition, by using under semi-cured state, liken metal nanoparticle thickener material for the material of the 13a of grafting material portion, 13b to and heat up faster the conducting paste material as the material of making protuberance 43, because becoming, protuberance utilize heat transmission to produce the starting point of exhaust, thereby begin to solidify from the middle body 70 of the 13a of grafting material portion, therefore can exhaust be overflowed to the outside.
In addition, for as the semi-solid preparation temperature of conducting paste material of the material of making protuberance and the curing temperature of curing temperature and metal nanoparticle thickener material, can use through suitable adjusted temperature.In addition, according to the relation of 5 ℃/minute of programming rates, the difference of the curing temperature of conducting paste material and metal nanoparticle thickener material more preferably is set to more than 5 ℃ at least.This be because, about 1 minute, the official post conducting paste material of 5 ℃ curing temperature is than the faster curing of metal nanoparticle thickener material, thereby can prevent that exhaust that metal nanoparticle thickener material produced when solidifying from exerting an influence to the curing of conducting paste material.
And, when pushing electrode 21a,, be soft therefore because protuberance 43 ' is in semi-cured state, shown in Figure 11 (e), can reduce electronic devices and components 3 suffered damage of electrode 21a when protuberance 43 ' is pushed as far as possible.
In addition, protuberance 43 is being used as the starting point of utilizing heat transmission generation exhaust, but not be used to guarantee also can before the 13a of grafting material portion, 13b solidify, conducting paste material portion 44 be cured, and be cured simultaneously under the situation of sept at interval of electrode.
In addition, also can be not so good as the material of coating metal nano particle thickener shown in Figure 11 (b) with covering conducting paste material portion 44, but as shown in figure 12, avoid conducting paste material portion 44 and the formation grafting material 13a of portion.
In addition, in the present embodiment, be coated with metal nanoparticle thickener material with after covering conducting paste material portion 44, make conducting paste material portion 44 become semi-cured state again, but also can before coating metal nano particle thickener material, make conducting paste material portion 44 become semi-cured state.Owing to exist under the situation of the possibility of mixing at these two kinds of materials, can prevent conducting paste material and metal nanoparticle thickener material mixing really, therefore comparatively desirable.
In addition, in the present embodiment, when putting electronic devices and components 3, make conducting paste material portion 44 be in semi-cured state, but also can make it be in the full solidification state, also can there be semi-cured state in the conducting paste material.
In addition, can use curing temperature and metal nanoparticle thickener material not to have the conducting paste material of difference substantially, but in this case, can not behind coating metal nano particle thickener material, only make the conducting paste material cured.Therefore, after the conducting paste material is coated electrode 2a, before coating metal nano particle thickener material, need make the conducting paste material cured.At this moment, can make the conducting paste material be in semi-cured state, also can make it be in the full solidification state.But,, when putting electronic devices and components, preferably make conducting paste material portion 44 be in semi-cured state from can reduce the suffered damage this point of electrode 21a as far as possible.
In addition, though to electronic devices and components 3 for the situation of LED is illustrated, also go for the bigger electronic devices and components of electrode area.In addition, though the grafting material as metal nanoparticle thickener material is coated with, also can use methods such as printing with ink-jet method.In addition, the conducting paste material also can be the thickener material beyond the silver-colored thickener material.
In addition, the protuberance 43 of present embodiment 2 is not limited to the shape shown in Figure 10,11, can also be the different shape described in the execution mode 1.
(execution mode 3)
Below, the assembling structure in the execution mode involved in the present invention 3 is described.
Figure 13 is the sectional structure chart of the assembling structure 34 of execution mode 3 involved in the present invention.As shown in figure 13, the structure of the assembling structure 34 in the execution mode 3 involved in the present invention is basic identical with execution mode 1, but the material difference of protuberance.Therefore, be that the center describes with this difference.In addition, to identical with the execution mode 1 in fact identical label of structure mark.
Protuberance 52 in the present embodiment 3 uses the material that contains oxide to make, and is used as the oxygen supply material and uses, and is equivalent to an example of " member of oxygen is provided " of the present invention.In addition, can use cupric oxide or aluminium oxide etc. as oxide.Can use particle diameter is formed protuberance for cupric oxide or the alumina powder of about 1 μ m with the thickener material that epoxy resin mixes mutually.As the composition of thickener material, for example, represent with the ratio of weight %, can adopt oxide: the composition of resin=80: 20.
Then, the manufacture method to the assembling structure 34 of present embodiment 3 describes.
Figure 14 (a)～(f) is the figure of manufacture method that is used to illustrate the assembling structure 34 of present embodiment 3.
Shown in Figure 14 (a), above-mentioned thickener material is coated the top of electrode 2a, thereby forms oxygen supply material portion 50.In addition, use curing temperature smaller or equal to the curing temperature of metal nanoparticle thickener material, after curing than metal nanoparticle thickener material heat up material (material that pyroconductivity is higher) faster as the mixture of above-mentioned oxide and resin, be the thickener material.Then, shown in Figure 14 (b), metal nanoparticle thickener material is coated on electrode 2a, the 2b, covers oxygen supply material portion 50, thereby forms the grafting material 13a of portion, 13b.This operation that metal nanoparticle thickener material is coated with is equivalent to an example of painting process of the present invention.
Thereafter, shown in Figure 14 (c), with more than or equal to the curing temperature of thickener material, the substrate 1 that is formed with the 13a of grafting material portion, 13b is heated, thereby only make oxygen supply material portion 50 be solidified to form oxygen supply member 51 less than the temperature of the curing temperature of metal nanoparticle thickener material.This coating thickener material also makes its operation that is solidified to form oxygen supply member 51 be equivalent to the example that member of the present invention forms operation.
Next, shown in Figure 14 (d), keep, and it is put to the above-mentioned grafting material 13a of portion, 13b with 16 pairs of electronic devices and components 3 of lift-launch instrument.Then, electronic devices and components 3 are pushed to the 13a of grafting material portion, 13b, until the upper end of its electrode 21a and oxygen supply member 51 connect (with reference to Figure 14 (e)).This operation is equivalent to an example of arrangement step of the present invention.
At last, utilize and use the heat treatment of recirculation furnace that the 13a of grafting material portion, 13b are cured, form junction surface 15a, 15b, and provide oxygen to its peripheral metal nanoparticle thickener material by oxygen supply member 51, form protuberance 52, thereby make the assembling structure 32 shown in Figure 14 (f).This operation is equivalent to an example of heat treatment step of the present invention.
Like this, in the present embodiment, be decided to be oxide owing to will make the material of protuberance 52, therefore when heat treatment step, the oxygen of oxide helps to be present in the decomposition of the dispersant among the 13a of grafting material portion, thereby can promote to utilize the gasification of the metal nanoparticle thickener material of formed protuberance 52 peripheries of the material that contains oxide.As mentioned above, utilize dispersant that metal nanoparticle thickener material is carried out stabilisation, make not polymerization of metal nanoparticle, hinder polymerization by making this dispersant cover metal nanoparticle.In the present embodiment, the oxide that is used as the material of making protuberance 52 decomposes this dispersant, overflows thereby can produce exhaust effectively and make it.
Promptly, by being disposed at the middle body 70 of grafting material by the formed protuberance 52 of the material that contains oxide, can promote the sintering of the metal nanoparticle thickener material of middle body 70, thereby begin to solidify and the generation exhaust from the middle body 70 of the 13a of grafting material portion, but, therefore the exhaust that is produced is overflowed from the 13a of grafting material portion to the outside because peripheral part 71 is still uncured.
In addition, because the mounting structure body and function protuberance of making like this transmits the starting point of generation exhaust and produces the starting point of exhaust by oxygen supply as sept, utilization heat, therefore, the exhaust that results from the grafting material portion is overflowed to the outside.
In addition, in the present embodiment, protuberance 52 contacts with electrode 2a and electrode 21a, but under the situation that only is used as the oxygen supply material, also can be disposed at the central authorities of grafting material portion and does not contact with electrode 2a, 21a.
In addition, under the situation that only is used as the oxygen supply material, the thickener material also can not be than the metal nanoparticle thickener material material (material that pyroconductivity is higher) faster that heats up.
In addition, oxygen supply member 51 be not used as under the situation of sept, can after electronic devices and components 3 are put, the thickener material of present embodiment and the 13a of grafting material portion, 13b is being solidified simultaneously yet.
In addition, be not less than in the curing temperature of thickener material under the situation of curing temperature of metal nanoparticle thickener material, after coating the thickener material on the electrode, before coating metal nano particle thickener material, make the thickener material cured and form protuberance 52, thereby protuberance 52 can be used as sept.
In addition, in the present embodiment, in Figure 14 (c), make oxygen supply material portion 50 full solidification, but also can be semi-cured state.In this case, under the situation that protuberance is used as the starting point of utilizing heat transmission generation exhaust, use semi-solid preparation temperature at least below the curing temperature of metal nanoparticle thickener material, behind semi-solid preparation than the metal nanoparticle thickener material material (material that pyroconductivity is higher) faster that heats up, as the material of making oxygen supply material portion 50.
In addition, the protuberance 52 of present embodiment 3 is not limited to this shape, can also be the different shape described in the execution mode 1.
In addition, in present embodiment 3, by oxygen supply member 51 is set, metal nanoparticle thickener material to middle body 70 when heat treatment provides oxygen, but also can adopt following structure: promptly, by make any one electrode among electrode 2a or the electrode 21a, be in the state of oxidation corresponding to the part of the middle body 70 of junction surface 15a, provide oxygen to the metal nanoparticle thickener material of middle body 70.But, more preferably be provided with as the enforcement mode is 1,2 described, have sept and utilize heat to transmit the protuberance of function of at least one among both of starting point of generation exhaust.In addition, so-called and this middle body are 70 corresponding, the part of electrode 2a, for example are equivalent to part 200a ' as shown in Figure 9.In addition, so-called and this middle body are 70 corresponding, the part of electrode 21a, for example are meant and as shown in Figure 9 the relative part of part 200a '.
In addition, in execution mode 2, be provided with, but also can use metal oxide, thereby protuberance 43 is used as the starting point that produces exhaust by oxygen supply as the electric conducting material in the conducting paste material by the formed protuberance 43 of conducting paste material.
In addition, in present embodiment 3, use the thickener material that has mixed cupric oxide or alumina powder in the resin to make protuberance 52, but also can only metal oxides such as cupric oxide or alumina powder be put on electrode 21a.In this case, metal oxide is put on electrode 21a square from it coating metal nano particle thickener material and form the 13a of grafting material portion.
In addition, in above-mentioned execution mode 1～3, assembling structure is inserted in the recirculation furnace, the 13a of grafting material portion, 13b are solidified, but also assembling structure can be put on heating plate, so that the 13a of grafting material portion, 13b are cured.At this moment,, utilize heat transmission to produce the starting point of exhaust, therefore, more preferably begin heating from substrate 1 one sides that are provided with protuberance thereby become because protuberance is faster because of the heat transmission from substrate 1 heats up than the 13a of grafting material portion.
In addition, in above-mentioned execution mode 1～3, have only the junction surface 15a of bigger electrode 2a one side of area to be provided with protuberance, but also can be formed with protuberance on the junction surface 15b of electrode 2b one side.
In addition, solidify, not only can heat, can also apply supersonic oscillations in order to make the 13a of grafting material portion, 13b.
(execution mode 4)
Below, the assembling structure in the execution mode involved in the present invention 4 is described.
In above-mentioned execution mode 1～3, used the example of LED, but in present embodiment 4, used IGBT (insulated gate bipolar transistor) as electronic devices and components as electronic devices and components 3.In addition, the board structure of junction surface in the present embodiment 4 and protuberance and manufacture method are identical with execution mode 1.
Figure 15 is the sectional structure chart of the assembling structure 60 in the execution mode 4 involved in the present invention.
As shown in figure 15, in the assembling structure 60 of present embodiment 4, the electronic devices and components (IGBT) 63 that are provided with substrate 61 and are disposed at the upside of substrate 61 across junction surface 62.This IGBT is used to flow to the control system of the drive current of driving arrangements such as motor, is the driving semiconductor element that needs cooling measure.As the semiconductor that is used for IGBT, can enumerate the Si semiconductor, can also be SiC semiconductor, GaN semiconductor.
The upper surface of these electronic devices and components 63 is formed with electrode 64, is electrically connected with substrate 61 by metal lead wire 65.
These electronic devices and components 63 are identical with execution mode 1～3, utilize to be fixed on the substrate 61 by the formed junction surface 62 of metal nanoparticle thickener material.Electronic devices and components 63 dispel the heat via this junction surface 62.In addition, the middle body 70 at junction surface 62 is formed with the protuberance 67 identical with execution mode 1.The middle body 70 at junction surface 62 is provided with three these protuberances 67, and the upper end of protuberance 67 and electronic devices and components 63 connect.Like this, different with execution mode 1～3 in present embodiment 4, junction surface 62 is not arranged between the electrode.In addition, an example with junction surface of heat sinking function of the present invention is equivalent to the junction surface 62 of present embodiment 4, and an example of member of the present invention is equivalent to the protuberance 67 of present embodiment 4.
The manufacture method of the assembling structure 60 of present embodiment 4 is as follows.At first, identical with execution mode 1, utilize metal salient point on substrate 1, to form protuberance 67, metal nanoparticle thickener material is coated on the substrate 1, to cover protuberance 67.Then, electronic devices and components 63 are disposed on the metal nanoparticle thickener material, electronic devices and components 63 are pushed to substrate 1, connect until electronic devices and components 63 and protuberance 67., by carry out heat treated, metal nanoparticle thickener material be cured, form junction surface 62, thereby electronic devices and components 63 are fixed in substrate 1 thereafter.At last, utilize metal lead wire 65 that the electrode 64 of electronic devices and components 63 is electrically connected with the electrode 68 of substrate 61, thereby make the assembling structure 60 of present embodiment 4.
In present embodiment 4, during fabrication, because protuberance 67 is used as sept, the exhaust that middle body 70 is produced in the time of can making heat treatment is overflowed to the outside, therefore, also can prevent residual exhaust in the junction surface 62.Suppose in junction surface 62 under the residual situation that exhaust arranged, though the heat of electronic devices and components 63 via the deterioration of efficiency of junction surface 62 to the substrate heat radiation, can be shown in present embodiment 4, by suppressing the residual radiating efficiency that improves of exhaust.
In addition, in the present embodiment, metal salient point forms protuberance 67 because utilization heats up faster than metal nanoparticle thickener material, and therefore, protuberance 67 heats up faster than metal nanoparticle thickener material when heat treatment.Therefore, when heat treatment, owing to begin to solidify from the metal nanoparticle thickener material of the middle body 70 that is positioned at protuberance 4 peripheries, in the beginning sintering, produce gases such as exhaust, heat slowly transmits and causes sintering and produce exhaust to peripheral part 71 from middle body 70 beginning, therefore, can the exhaust that be produced be overflowed from the junction surface.
In addition, be used as the material of making protuberance 67, therefore, also protuberance 67 can be used as the starting point that produces exhaust by oxygen supply owing to will contain the material of metal oxide.
In addition, illustrated variation goes for the assembling structure 60 of present embodiment 4 in execution mode 1～3 and each execution mode.
Below, invention related to the present invention is set forth.
The first aspect of related invention of the present invention is a kind of assembling structure, comprising:
Substrate;
Electronic devices and components;
Described electronic devices and components are fixed in the junction surface surface, that make by metal nanoparticle thickener material of described substrate; And
Be arranged at the made member of material middle body, be higher than described metal nanoparticle thickener material by pyroconductivity at described junction surface.
In addition, the second aspect of related invention of the present invention is a kind of assembling structure, comprising:
Substrate;
Electronic devices and components;
Described electronic devices and components are fixed in described substrate the surface, by the formed junction surface of metal nanoparticle thickener material; And
Be arranged at member middle body, that oxygen is provided at described junction surface.
The third aspect of related invention of the present invention is, in the assembling structure of a first aspect of the present invention or second aspect,
Described member is configured to connect with described substrate, and does not connect with described electronic devices and components.
In addition, the fourth aspect of related invention of the present invention is a kind of manufacture method of assembling structure,
Described assembling structure comprises: substrate;
Electronic devices and components;
Described electronic devices and components are fixed in described substrate the surface, by the formed junction surface of metal nanoparticle thickener material; And
Be arranged at described junction surface, be higher than the made member of material of described metal nanoparticle thickener material by pyroconductivity,
The manufacture method of described assembling structure comprises:
Member forms operation, and this member forms operation and form described member on described substrate or described electronic devices and components;
Painting process, this painting process is coated described substrate or described electronic devices and components with described metal nanoparticle thickener material;
Arrangement step, this arrangement step is configured described substrate and described electronic devices and components, with the middle body of the described metal nanoparticle thickener material that described member is disposed at described coating; And
Heat treatment step, this heat treatment step by described metal nanoparticle thickener material and described member are heated, are cured described metal nanoparticle thickener material after described arrangement step, forming described junction surface,
In described heat treatment step, the material of making described member heats up faster than described metal nanoparticle thickener material.
In addition, the 5th aspect of related invention of the present invention is a kind of manufacture method of assembling structure,
Described assembling structure comprises: substrate;
Electronic devices and components; And
Described electronic devices and components are fixed in described substrate the surface, by the formed junction surface of metal nanoparticle thickener material, the manufacture method of described assembling structure comprises:
Member forms operation, and this member forms operation and form the oxygen supply member on described substrate or described electronic devices and components;
Painting process, this painting process is coated described substrate or described electronic devices and components with described metal nanoparticle thickener material;
Arrangement step, this arrangement step is configured described substrate and described electronic devices and components, to clip the described metal nanoparticle thickener material of described coating; And
Heat treatment step, this heat treatment step is after described arrangement step, by described metal nanoparticle thickener material and described oxygen supply member are heated, provide oxygen by described oxygen supply member to the middle body of the described metal nanoparticle thickener material of the described coating of process, described metal nanoparticle thickener material is cured, thereby forms described junction surface.
Industrial practicality
Assembling structure of the present invention and manufacture method thereof have the effect that the gas that produces in the time of making heat treatment is efficiently overflowed to the outside, applicable to semiconductor element is engaged to substrate etc.
Label declaration
1 substrate
2a, 2b electrode
3 electronic devices and components
4 protuberances
13a, 13b grafting material section
15a, 15b junction surface
16 lift-launch instruments
21a, 21b electrode

Claims (18)

1. an assembling structure is characterized in that, comprising:
Substrate;
Electronic devices and components;
Described electronic devices and components are fixed in the junction surface surface, that make by metal nanoparticle thickener material of described substrate; And
Connect with the member that uses as sept with described electronic devices and components and described substrate.
2. assembling structure as claimed in claim 1 is characterized in that,
Described member is embedded in the middle body at described junction surface, and the material that is higher than described metal nanoparticle thickener material by pyroconductivity is made.
3. assembling structure as claimed in claim 1 is characterized in that,
Described member is embedded in the middle body at described junction surface, for the member of oxygen is provided to described metal nanoparticle thickener material.
4. as each the described assembling structure in the claim 1 to 3, it is characterized in that,
Described substrate has electrode,
Described electronic devices and components have electrode,
Described junction surface is electrically connected the electrode of described substrate with the electrode of described electronic devices and components,
The electrode of described member and described electronic devices and components and the electrode of described substrate connect.
5. assembling structure as claimed in claim 4 is characterized in that,
Described member is formed by the electrode of described substrate or the concavo-convex of electrode surface of described electronic devices and components.
6. assembling structure as claimed in claim 1 is characterized in that,
Described junction surface has heat sinking function.
7. as each the described assembling structure in the claim 1 to 3, it is characterized in that,
Be provided with a plurality of described members,
Described a plurality of member is provided with intensively at described middle body than the peripheral part at described junction surface.
8. assembling structure as claimed in claim 4 is characterized in that,
The electrode of described substrate and the electrode of described electronic devices and components have at least a part to be oppositely arranged,
Described junction surface is arranged between the part of described that be oppositely arranged, described electrode at least.
9. assembling structure as claimed in claim 1 or 2 is characterized in that,
Described member is formed by salient point.
10. as each the described assembling structure in the claim 1 to 3, it is characterized in that,
Described member uses the thickener material that comprises conducting objects to make.
11. assembling structure as claimed in claim 3 is characterized in that,
Described member uses the thickener material that metal oxide and mixed with resin are formed to make.
12. assembling structure as claimed in claim 3 is characterized in that,
Described member uses metal oxide to make.
13. each the described assembling structure as in the claim 1 to 3 is characterized in that,
Described member is made by the material that curing temperature is lower than the described metal nanoparticle thickener material of making described junction surface.
14. each the described assembling structure as in the claim 1 to 3 is characterized in that,
Described metal nanoparticle thickener material comprises the following metallic of 50nm.
15. assembling structure as claimed in claim 4 is characterized in that,
Some electrodes in the electrode of described substrate or the electrode of described electronic devices and components, with the corresponding part of middle body at described junction surface, by providing the material of oxygen to be formed to described metal nanoparticle thickener material.
16. the manufacture method of an assembling structure, described assembling structure comprises:
Substrate;
Electronic devices and components;
Described electronic devices and components are fixed in the junction surface surface, that make by metal nanoparticle thickener material of described substrate; And
As the sept that connects with described electronic devices and components and described substrate and be arranged at the member at described junction surface, it is characterized in that,
The manufacture method of described assembling structure comprises:
Member forms operation, and this member forms operation will be formed at described substrate or described electronic devices and components as the member that described sept uses;
Painting process, this painting process is coated described substrate or described electronic devices and components with described metal nanoparticle thickener material;
Arrangement step, this arrangement step is configured described substrate and described electronic devices and components, to clip the described metal nanoparticle thickener material of described coating; And
Heat treatment step, this heat treatment step by described metal nanoparticle thickener material is heated, are cured described metal nanoparticle thickener material, to form described junction surface after described arrangement step.
17. the manufacture method of assembling structure as claimed in claim 16 is characterized in that,
Described member is arranged at the middle body at described junction surface,
In described heat treatment step, the material of making described member heats up faster than described metal nanoparticle thickener material.
18. the manufacture method of assembling structure as claimed in claim 16 is characterized in that,
Described member is arranged at the middle body at described junction surface,
In described heat treatment step, described member provides oxygen to described metal nanoparticle thickener material.
CN200980124643.4A 2008-06-25 2009-06-18 The manufacture method of assembling structure and assembling structure Expired - Fee Related CN102067298B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008166565 2008-06-25
JP2008-166565 2008-06-25
PCT/JP2009/002781 WO2009157160A1 (en) 2008-06-25 2009-06-18 Packaging structure and method for manufacturing packaging structure

Publications (2)

Publication Number Publication Date
CN102067298A true CN102067298A (en) 2011-05-18
CN102067298B CN102067298B (en) 2015-10-14

Family

ID=41444233

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980124643.4A Expired - Fee Related CN102067298B (en) 2008-06-25 2009-06-18 The manufacture method of assembling structure and assembling structure

Country Status (5)

Country Link
US (1) US9246073B2 (en)
EP (1) EP2293324B1 (en)
JP (1) JP5331113B2 (en)
CN (1) CN102067298B (en)
WO (1) WO2009157160A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102263097A (en) * 2011-06-07 2011-11-30 财团法人交大思源基金会 Heterogeneous integrated structure with integrated circuit and light emitting diode and manufacturing method thereof
CN112166652A (en) * 2018-05-29 2021-01-01 京瓷株式会社 Substrate for mounting electronic component, electronic device, and electronic module

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2293324B1 (en) 2008-06-25 2019-05-15 Panasonic Intellectual Property Management Co., Ltd. Packaging structure and method for manufacturing packaging structure
CA2743778A1 (en) * 2008-11-19 2010-05-27 Bayer Bioscience N.V. Expression cassettes for seed-enhanced expression in plants
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR100986397B1 (en) * 2010-02-08 2010-10-08 엘지이노텍 주식회사 Light emitting apparatus
JP2012069545A (en) * 2010-09-21 2012-04-05 Toyoda Gosei Co Ltd Method for mounting light-emitting element
US9224665B2 (en) 2011-08-04 2015-12-29 Mitsubishi Electric Corporation Semiconductor device and method for producing the same
JP6017880B2 (en) * 2012-08-01 2016-11-02 京セラ株式会社 Method for joining metal surfaces and method for producing semiconductor element mounting body using the same
JP6214273B2 (en) * 2013-08-08 2017-10-18 三菱電機株式会社 Bonding structure using metal nanoparticles and bonding method using metal nanoparticles
TWI505380B (en) * 2013-12-31 2015-10-21 Tai Saw Technology Co Ltd Conducting packaging structure and manufacturing method thereof
DE102014222818B4 (en) * 2014-11-07 2019-01-03 Danfoss Silicon Power Gmbh Electronic sandwich structure with two joining partners sintered together by means of a sintered layer
JP2017005071A (en) * 2015-06-09 2017-01-05 カルソニックカンセイ株式会社 Joint structure
WO2017203859A1 (en) * 2016-05-25 2017-11-30 日立オートモティブシステムズ株式会社 Electronic circuit device and method
US10186548B2 (en) * 2016-08-19 2019-01-22 Innolux Corporation Light emitting diode display device
CN107768498B (en) * 2016-08-19 2019-07-30 群创光电股份有限公司 Light emitting display device and preparation method thereof
JP2018206788A (en) * 2017-05-30 2018-12-27 富士通株式会社 Electronic device and manufacturing method thereof
JP7201439B2 (en) * 2017-11-15 2023-01-10 ヌヴォトンテクノロジージャパン株式会社 Semiconductor module and manufacturing method thereof
JP7263792B2 (en) * 2019-01-22 2023-04-25 三菱電機株式会社 Semiconductor device and its manufacturing method
EP3792962A1 (en) * 2019-09-12 2021-03-17 Infineon Technologies AG Method for monitoring a process of forming a sinterable connection layer by photometric measurements
DE112021001365T5 (en) * 2020-03-04 2022-12-22 Denso Corporation SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513820A (en) * 1991-07-02 1993-01-22 Omron Corp Semiconductor device
JP2008010703A (en) * 2006-06-30 2008-01-17 Fuji Electric Holdings Co Ltd Method for bonding between components of semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5931371A (en) * 1997-01-16 1999-08-03 Ford Motor Company Standoff controlled interconnection
JP3813797B2 (en) * 2000-07-07 2006-08-23 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
JP3995421B2 (en) * 2001-01-19 2007-10-24 株式会社ルネサステクノロジ Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
US6906425B2 (en) * 2002-03-05 2005-06-14 Resolution Performance Products Llc Attachment of surface mount devices to printed circuit boards using a thermoplastic adhesive
US20050133808A1 (en) * 2003-09-11 2005-06-23 Kyocera Corporation Package for housing light-emitting element, light-emitting apparatus and illumination apparatus
JP4246134B2 (en) 2003-10-07 2009-04-02 パナソニック株式会社 Semiconductor element mounting method and semiconductor element mounting substrate
TW200520123A (en) * 2003-10-07 2005-06-16 Matsushita Electric Ind Co Ltd Method for mounting semiconductor chip and semiconductor chip-mounted board
US20050253159A1 (en) * 2004-04-28 2005-11-17 Creswick Steven B Semiconductor (LED) chip attachment
CN1737072B (en) * 2004-08-18 2011-06-08 播磨化成株式会社 Conductive adhesive agent and process for manufacturing article using the conductive adhesive agent
US7880313B2 (en) * 2004-11-17 2011-02-01 Chippac, Inc. Semiconductor flip chip package having substantially non-collapsible spacer
JP2006202586A (en) 2005-01-20 2006-08-03 Nissan Motor Co Ltd Bonding method and bonding structure
US7153765B2 (en) * 2005-03-31 2006-12-26 Intel Corporation Method of assembling soldered packages utilizing selective solder deposition by self-assembly of nano-sized solder particles
DE102005020059B3 (en) * 2005-04-29 2006-10-05 Advanced Micro Devices, Inc., Sunnyvale Relining material`s thermal and mechanical characteristics improving method for carrier substrate and semiconductor chip arrangement, involves introducing material such that chip is positioned under substrate
US20060255102A1 (en) * 2005-05-11 2006-11-16 Snyder Rick B Technique for defining a wettable solder joint area for an electronic assembly substrate
US7615476B2 (en) * 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
JP4770379B2 (en) 2005-10-13 2011-09-14 富士電機株式会社 Metal member joining method and assembly jig thereof
JP2007194383A (en) * 2006-01-19 2007-08-02 Hitachi Lighting Ltd Optical member and backlight
WO2007122925A1 (en) 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. Electronic component, electronic component device using same, and method for manufacturing same
JP4715628B2 (en) 2006-05-11 2011-07-06 トヨタ自動車株式会社 Bonding material and bonding method
JPWO2008099554A1 (en) * 2007-02-15 2010-05-27 日本電気株式会社 Semiconductor package mounting structure
JP2008226946A (en) * 2007-03-09 2008-09-25 Nec Corp Semiconductor device and its manufacturing method
US8560387B2 (en) 2007-06-07 2013-10-15 Qurio Holdings, Inc. Systems and methods of providing collaborative consumer-controlled advertising environments
JP2009054893A (en) 2007-08-28 2009-03-12 Panasonic Electric Works Co Ltd Light emitting device
EP2293324B1 (en) 2008-06-25 2019-05-15 Panasonic Intellectual Property Management Co., Ltd. Packaging structure and method for manufacturing packaging structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513820A (en) * 1991-07-02 1993-01-22 Omron Corp Semiconductor device
JP2008010703A (en) * 2006-06-30 2008-01-17 Fuji Electric Holdings Co Ltd Method for bonding between components of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102263097A (en) * 2011-06-07 2011-11-30 财团法人交大思源基金会 Heterogeneous integrated structure with integrated circuit and light emitting diode and manufacturing method thereof
CN112166652A (en) * 2018-05-29 2021-01-01 京瓷株式会社 Substrate for mounting electronic component, electronic device, and electronic module

Also Published As

Publication number Publication date
EP2293324A1 (en) 2011-03-09
EP2293324A4 (en) 2014-09-10
JPWO2009157160A1 (en) 2011-12-08
US9246073B2 (en) 2016-01-26
US20110114706A1 (en) 2011-05-19
JP5331113B2 (en) 2013-10-30
EP2293324B1 (en) 2019-05-15
CN102067298B (en) 2015-10-14
WO2009157160A1 (en) 2009-12-30

Similar Documents

Publication Publication Date Title
CN102067298B (en) The manufacture method of assembling structure and assembling structure
EP1810332B1 (en) Nanotube-based circuit connection approach
JP5525335B2 (en) Sintered silver paste material and semiconductor chip bonding method
CN100373998C (en) Power assembly and method for manufacturing the same
JP2008153470A (en) Semiconductor apparatus and manufacturing method of semiconductor apparatus
JP5449958B2 (en) Semiconductor device, connection structure and manufacturing method thereof
US9373558B2 (en) Resin-sealed electronic control device
CN1096686C (en) Anisotropic conductive composition
JP2010171271A (en) Semiconductor device and method of manufacturing the same
US20160211195A1 (en) Electronic part mounting substrate and method for producing same
KR101741389B1 (en) Metal particle, paste, formed article, and laminated article
CN101529585B (en) Electronic device package structure and package manufacturing method
CN101593709B (en) Module including a sintered joint
JPWO2007122925A1 (en) Electronic component, electronic component device using the same, and manufacturing method thereof
JP2009087939A (en) Connecting method of metal surfaces, and paste therefor
US9640511B2 (en) Method for producing a circuit carrier arrangement having a carrier which has a surface formed by an aluminum/silicon carbide metal matrix composite material
KR102516493B1 (en) Double layer nanoparticle adhesive film
KR100737498B1 (en) Method for mounting semiconductor device and structure thereof
JP7007138B2 (en) Metal atom-containing particles, connection materials, connection structures and methods for manufacturing connection structures
KR20130097768A (en) Adhesive composition and semiconductor device using the same
CN103180079A (en) Production method for solder transfer base material, solder precoating method, and solder transfer base material
CN107819066A (en) A kind of production method of hypoxemia copper sintering DBC semiconductor heat electric substrates
JP6505004B2 (en) Semiconductor device, method of manufacturing the same, power module and vehicle
KR20170063544A (en) SUBSTRATE FOR POWER MODULE WITH Ag UNDERLAYER AND POWER MODULE
WO2018168185A1 (en) Semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151014

CF01 Termination of patent right due to non-payment of annual fee