CN101752389A - Al2O3/AlN/GaN/AlN MOS-HEMT device and manufacturing method thereof - Google Patents
Al2O3/AlN/GaN/AlN MOS-HEMT device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an Al2O3/AlN/GaN/AlN MOS-HEMT device and a manufacturing method thereof. The Al2O3/AlN/GaN/AlN MOS-HEMT device comprises an AlN buffer layer 7, a GaN channel layer 6 and an AlN barrier layer 5 which are formed on an AlN monocrystalline substrate 8 in sequence, an Al2O3 grid medium layer 4, a source electrode 1 and a drain electrode 3 which are formed on the AlN barrier layer 5 as well as a grid electrode 2 formed on the Al2O3 grid medium layer 4. The Al2O3/AlN/GaN/AlN MOS-HEMT device is characterized in that the traditional sapphire substrate is replaced by the AlN monocrystalline substrate and the self heating effect of the device can be reduced by using the high heat conductivity property of the AlN material. The traditional semi-insulated GaN epitaxial layer is replaced by the AlN buffer layer with high resistance and only the GaN channel layer is left, thereby parasitic heat conductivity and leakage current of the GaN epitaxial layer can be greatly reduced. In addition, the formed AlN/GaN/AlN quantum well structure further improves the binding force of two-dimensional electron gas in the channel, and thereby the current collapse effect can be reduced.
Description
Technical field
The present invention relates to electronic component technology, specifically refer to a kind of Al
2O
3/ AlN/GaN/AlN MOS-HEMT device, it can be used in high-temperature high-frequency large-power occasions, high power switch and the digital circuit.
Background technology
Owing to have extensive use at aspects such as high-power, high frequency and high-temperature amplifiers, AlGaN/GaN heterojunction High Electron Mobility Transistor (HEMT) becomes the focus of semiconductor applications research in the past in the more than ten years.Yet along with dwindling of device size, a series of problems such as current collapse, self-heating effect, leakage current and short-channel effect have seriously restricted further developing of device.In order to obtain more powerful HEMT device people some variants based on the AlGaN/GaN structure have been proposed, such as: the people such as W.Lanfort of the New York State University in 2004 have proposed the AlGaN/InGaN/GaN heterostructure, the O.Katz of Israel engineering institute in 2005 etc. has proposed the InAlN/GaN heterostructure, and they have proved that respectively the HEMT device of these two kinds of structure fabrications has bigger power by experiment.The use of the ultra-thin AlN layer of broad-band gap can be traced back to calendar year 2001, people such as the L.Shen of University of California have done improvement a little on traditional strain AlGaN/GaN heterojunction basis, promptly between AlGaN barrier layer and GaN resilient coating, inserted the thick AlN boundary layer of 1nm, the result has improved the mobility of two-dimensional electron gas (2DEG) in the raceway groove, the people such as J.Kuzmik of Technical University of Vienna in 2008 are inserted into the AlN thin layer in the InAlN/GaN heterojunction of lattice match, the result proves that this structure has not only reduced mixed crystal disordered chain but also increased the binding force of two-dimensional electron gas in raceway groove, thereby has greatly improved device performance.Current research to AlN/GaN heterojunction HEMT device is less, mainly is because use MOCVD or MBE technology growing high-quality AlN barrier layer on the GaN epitaxial loayer to have difficulties.Yet, use ultra-thin AlN barrier layer can effectively reduce short-channel effect and current collapse effect, so that this structure has important researching value in hyperfrequency, high-power applications.
The hetero-junctions conduction band band rank that AlN and GaN form are bigger, can stop thermoelectron to go out raceway groove and enter barrier layer and cushion, thereby improve the high field characteristic of HEMT device.Ultra-thin AlN/GaN heterojunction has the two-dimensional electron gas of high concentration, high mobility, except in high transconductance, low threshold voltage HEMT device, having the important application, can also be applied to other multiple device, such as: high-power transparent organism transducer, Terahertz plasma wave launcher etc.The AlN/GaN superlattices can be used for be made the intersubband Infrared Detectors, and if its cycle enough short so that form little band, it can also be used for the vertical transport of enhancing carrier in ultraviolet emission device and ultraviolet detector.
Traditional High Electron Mobility Transistor mainly adopts Sapphire Substrate or SiC substrate, and Sapphire Substrate has many advantages: at first, the production technology maturation of Sapphire Substrate, device quality are better; Secondly, sapphire stability is fine, can be used in the high growth temperature process; At last, sapphire mechanical strength height is easy to handle and clean.Therefore, most of technologies generally all with sapphire as substrate.Yet Sapphire Substrate also exists some problems: the at first lattice mismatch of Sapphire Substrate and epitaxial loayer and thermal stress mismatch, can in epitaxial loayer, produce a large amount of defectives, and cause difficulty for simultaneously the subsequent device processing technology; And sapphire heat conductivility bad (being about 0.35W/cmK), can cause the self-heating effect of HEMT device under big current work, influence device performance.The thermal conductivity of SiC substrate is (approximately 3.9W/cmK) better, so generally select for use SiC to do substrate under big current work condition.But can cause dislocation density bigger on the interface (to be approximately 10 in heteroepitaxy on the SiC
8～10
10Cm
-2), cause puncturing in advance, so reduced the stability and the noise performance of device.A kind of method that reduces dislocation density is to adopt horizontal outgrowth extension (LEO), however the prematurity still of this technical matters, and the device high frequency characteristics of manufacturing is relatively poor.So be necessary to use a kind of novel backing material to overcome the shortcoming of above-mentioned two kinds of conventional substrate.
Traditional GaN HEMT generally is to realize by depositing Al GaN (or InAlN or AlN) barrier layer on relatively thick semi-insulating GaN cushion.Use the semi-insulating GaN resilient coating to cause many problems easily: at first the current collapse effect under the radio frequency operation condition descends microwave output power, and this is mainly captured by surface trap and GaN body internal trap, and hot electron causes in the raceway groove; Secondly semi-insulating GaN resilient coating is introduced parasite current, reduces device performance, causes the HEMT device can't pinch off in the time of serious.Though there is certain methods can increase GaN resilient coating resistance, such as: in growth course, introduce more defects or mix, yet this has also increased the interior defect concentration of GaN body, thereby further increased the current collapse effect with carbon, iron plasma.Therefore being necessary to propose a kind of new structure avoids the problems referred to above.
Existing Al
2O
3/ AlN/GaN MOS-HEMT device architecture as shown in Figure 1.It is characterized in that: on Sapphire Substrate, form successively AlN nucleating layer, GaN cushion and AlN barrier layer, on the AlN barrier layer, form successively Al
2O
3Gate dielectric layer, source electrode and drain electrode, and at Al
2O
3Form grid on the gate dielectric layer, wherein source electrode, drain electrode form Ohmic contact, grid, Al with barrier layer respectively
2O
3Gate dielectric layer and AlN barrier layer form the MOS structure.Because polarization two-dimensional electron gas (2DEG) can be assembled at the interface between AlN and GaN, forms raceway groove.Improvement this structure has mainly been done two on traditional GaN based hemts basis aspect: what the gate barrier layer of (one) traditional GaN based hemts adopted is Schottky barrier, its major defect is that grid leakage current is bigger, and this structure has increased one deck Al between grid and semiconductor layer
2O
3High K oxide, high K oxide skin(coating) not only can reduce grid leakage current, improves the channel conduction electric current, can also carry out passivation to the surface of device, reduces the current collapse effect that is caused by surface trap; (2) this structure uses AlN to substitute traditional AlGaN material as barrier layer, has reduced at first like this interface roughness and Alloy disorder scattering, has improved the mobility of raceway groove two-dimensional electron gas; Secondly the energy gap (being about 6.1eV) of AlN is wider than AlGaN material, and AlN/GaN compares with AlGaN/GaN has bigger conduction band discontinuous quantity, and is therefore stronger to the constraint ability of channel electrons; The AlN/GaN interface has bigger polarization charge densities in addition, and therefore channel electrons concentration increase.But also there is very big shortcoming in this structure, the one, and self-heating effect is obvious, and this mainly is because the heat conductivility of Sapphire Substrate is bad; The 2nd, the GaN resilient coating is a semi insulating material, and device is easy to generate parasitic conductance and passes through the leakage current of GaN resilient coating when working, have a strong impact on device performance; The 3rd, the current collapse effect appears when high voltage moves, and this mainly is because the hot electron that two-dimensional electron gas forms under high electric field quickens overflows raceway groove is cushioned a layer body internal trap and captures and cause.
Summary of the invention
The objective of the invention is: a kind of Al is provided
2O
3/ AlN/GaN/AlN MOS-HEMT device reduces the self-heating effect and the current collapse effect that have device now, eliminates simultaneously parasitic conductance and the leakage current of GaN cushion.
Al of the present invention
2O
3/ AlN/GaN/AlN MOS-HEMT device architecture as shown in Figure 2.Comprise: AlN single crystalline substrate 8 and the AlN cushion 7, GaN channel layer 6 and the AlN barrier layer 5 that form successively thereon, the Al that forms on the AlN barrier layer 5
2O
3Gate dielectric layer 4, source electrode 1 and drain 3, and Al
2O
3The grid 2 that forms on the gate dielectric layer 4, wherein source electrode 1, drain electrode 3 form Ohmic contact, grid 2, Al with barrier layer 5 respectively
2O
3Gate dielectric layer 4 and AlN barrier layer 5 form the MOS structure.AlN single crystalline substrate 8 is involuntary doping in this structure, and thickness is 3 μ m, and AlN resilient coating 7 is involuntary doping, and thickness is 1-3 μ m; The silicon ion back of the body end doping content of GaN channel layer 6 is 4 * 10
18Cm
-3, thickness is 50nm; AlN barrier layer 5 is involuntary doping, and thickness is 3.5nm; Al
2O
3The thickness of gate dielectric layer 4 is 16nm.Source electrode 1 and drain electrode 3 are metal ohmic contact Ti/Al/Ni/Au, and Ti thickness is 20nm, and Al thickness is 120nm, and Ni thickness is 45nm, and Au thickness is 55nm, and grid 2 is metal Ni/Au, and Ni thickness is 20nm, and Au thickness is 200nm.The length of source electrode 1 and drain electrode 3 is 1 μ m, and the length of grid 2 is 1.2 μ m, and the expansion area length of source electrode 1 grid 2 is 2 μ m, and the expansion area length of grid 2 drain electrodes 3 is 1.3 μ m.
The object of the present invention is achieved like this: the present invention adopts the AlN single crystalline substrate to substitute traditional Sapphire Substrate, utilizes the high heat conductance character of AlN material to greatly reduce the self-heating effect of device.The present invention also uses high resistance AlN resilient coating to replace traditional semi-insulating GaN epitaxial loayer, only stay the thick GaN channel layer of one deck 50-70nm, thereby the parasitic conductance and the leakage current of GaN epitaxial loayer have been eliminated, and the AlN/GaN/AlN quantum well structure that forms will further improve the binding force of two-dimensional electron gas in raceway groove, thereby reduce the current collapse effect.
Al
2O
3The preparation of/AlN/GaN/AlN MOS-HEMT device is undertaken by following several steps:
(1) on AlN single crystalline substrate 8,, utilizes metal organic chemical vapor deposition technology growing AIN resilient coating 7 along departing from the crystallographic axis 10 degree directions;
(2) on AlN resilient coating 7, growing GaN channel layer 6 adopts the silicon ion injection technology to be mixed in 6 back of the body ends of GaN channel layer then;
(3) on GaN channel layer 6, growing AIN barrier layer 5;
(4) on AlN barrier layer 5, adopt atom layer deposition process deposit Al
2O
3Gate dielectric layer 4;
(5) Al
2O
3After gate dielectric layer 4 forms, by photoetching process in the source, the drain region forms the required window of etching, adopts reactive ion etching process to remove the Al of source, drain region
2O
3Dielectric film;
(6) after etching is finished, utilize photoetching process to obtain source, drain region window, adopt electron beam evaporation process then, evaporation metal ohmic contact Ti/Al/Ni/Au forms source electrode 1 and drain electrode 3 on source, drain region window;
(7) after source electrode 1, drain electrode 3 form, at Al
2O
3Utilize photoetching process to obtain the area of grid window on the gate dielectric layer 4, and adopt electron beam evaporation process evaporation gate metal Ni/Au at this area of grid window, form grid 2.So far finish the device manufacturing.
Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said growing AIN cushion 7, its growth conditions is: growth rate is 20nm/ minute, thickness is 1～3 μ m.Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said growing GaN channel layer 6, its growth conditions is: the temperature of reative cell is controlled between 800 ℃～950 ℃, and growth rate is 5nm/ minute, and thickness is 50～70nm.
Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said growing AIN barrier layer 5, its growth conditions is: reaction temperature is 800 ℃, and growth rate is 2nm/ minute, and thickness is 3～5nm.
Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said deposit Al
2O
3Gate dielectric layer 4, its growth conditions is: earlier at 300 ℃ of deposit Al
2O
3Film, the 60s that in 600 ℃ of lower oxygen atmospheres, anneals then, thickness is 15～20nm.
Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said growing AIN barrier layer 5, two factors of main consideration, on the one hand for high-quality AlN/GaN hetero-junctions, the AlN barrier layer should enough widely form good constraint effect to it in order to obtain the high density two-dimensional electron gas simultaneously, AlN/GaN hetero-junctions lattice mismatch is that the critical thickness of 2.4%, AlN barrier layer formation dislocation is 3nm on the other hand, and comprehensive above two aspect AlN optimum thicknesses are 3.5nm.
Above-mentioned a kind of new A l
2O
3The processing step of/AlN/GaN/AlN MOS-HEMT device, said to the doping of GaN channel layer 6 back ends, be exactly by ion implantation technology, make silicon ion mainly be distributed in the latter half of GaN channel layer 6, wherein silicon ion mixes as the alms giver.
The present invention compared with prior art has following advantage:
(1) method of the present invention's proposition is to have substituted traditional Sapphire Substrate and SiC substrate with the AlN single crystalline substrate.Compare with Sapphire Substrate, the AlN substrate has good thermal conductivity (being about 2.85W/cmK), and its thermal conductivity will exceed more than 8 times than sapphire substrate, can in time eliminate the Joule heat that produces in the raceway groove, reduces self-heating effect.Compare with the SiC substrate, use the AlN single crystalline substrate can make the dislocation density of epitaxial film on it reduce by four and reach 10 more than the order of magnitude
4～10
5Cm
-2, can improve the working life of the crystal mass and the device of epitaxial film so greatly.
(2) method that proposes of the present invention is to make resilient coating with AlN, then extension one deck GaN channel layer and AlN barrier layer successively thereon.With existing Al
2O
3/ AlN/GaN MOS-HEMT device is compared, the present invention has replaced traditional semi-insulating GaN epitaxial loayer with high resistance AlN cushion and has formed the AlN/GaN/AlN quantum well structure, thereby parasitic conductance and the leakage current of GaN epitaxial loayer have greatly been reduced, simultaneously further improve the binding force of two-dimensional electron gas in raceway groove, reduced the current collapse effect.
(3) behind the epitaxial growth GaN channel layer its back end is mixed among the present invention, in order to eliminate at the interface negative polarization charge the exhausting two-dimensional electron gas of GaN/AlN, the electronics that the alms giver is provided is assembled to raceway groove under the polarization field effect, has effectively improved two-dimensional electron gas.Owing to reduced interface roughness and mixed crystal scattering, two-dimensional electron gas has higher mobility (＞1800cm in the AlN/GaN/AlN SQW in addition
2/ Vs), so the new A l of the present invention's proposition
2O
3The channel conduction of/AlN/GaN/AlN MOS-HEMT device will exceed more than the twice than traditional AlGaN/GaN HEMT device.
(4) processing step of the present invention all is current domestic relatively ripe technology, and technical process is fairly simple, complete and traditional GaN based hemts device preparation technology compatibility.
Description of drawings
Fig. 1 is existing Al
2O
3/ AlN/GaN MOS-HMET device architecture figure.
Fig. 2 is Al of the present invention
2O
3/ AlN/GaN/AlN MOS-HMET device architecture figure.
Fig. 3 is traditional Al
2O
3/ AlGaN/GaN MOS-HMET device architecture figure.
Fig. 4 is Al of the present invention
2O
3/ AlN/GaN/AlN MOS-HEMT device and traditional Al
2O
3The output characteristics of/AlGaN/GaN MOS-HEMT device relatively.
Fig. 5 is Al of the present invention under zero grid voltage
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3The output characteristics of/AlN/GaN MOS-HEMT device relatively.
Fig. 6, Fig. 7 are respectively Al of the present invention under zero grid voltage
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3/ AlN/GaN MOS-HEMT device leaks the lattice temperature contour map at grid place, limit.
Fig. 8 is Al of the present invention under zero grid voltage
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3/ AlN/GaN MOS-HEMT device is at the lattice temperature distribution map of focus center vertical direction.
Fig. 9 is Al of the present invention under the poised state
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3The conduction band structure comparison diagram of/AlN/GaN MOS-HEMT device.
Embodiment
Referring to Fig. 2, it is the new A l that the present invention proposes
2O
3/ AlN/GaN/AlN MOS-HEMT device architecture figure.In the preparation process with the AlN monocrystalline as substrate, respectively with trimethyl gallium (TMGa), trimethyl aluminium (TMA1) as Ga source and Al source, with high-purity N H
3Gas is nitrogenous source, and hydrogen is carrier gas, and concrete preparation flow is as follows:
1. the AlN single crystalline substrate is placed the reative cell of metal organic chemical vapor deposition (MOCVD) equipment, the vacuum degree of reative cell is evacuated to 1 * 10
-2Under the Torr, down the AlN substrate is carried out high-temperature heat treatment the mixed gas protected of hydrogen and ammonia, heating-up temperature is 1100 ℃, and be 5min heating time, and chamber pressure is 40Torr, and the feeding hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm;
2. underlayer temperature is reduced to 1080 ℃, the maintenance growth pressure is 40Torr, and hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm, and feeding flow in reative cell is the aluminium source of 30 μ mol/min, and epitaxial growth thickness is the AlN resilient coating of 1 μ m;
3. growth temperature is reduced to 800 ℃, the maintenance growth pressure is 40Torr, and hydrogen flowing quantity is 1500sccm, and ammonia flow is 1500sccm, and feeding flow in reative cell is the gallium source of 50 μ mol/min, is the GaN channel layer of 50nm with the growth thickness;
4. the injection degree of depth of control silicon ion mainly concentrates in the zone of 25nm behind the GaN channel layer silicon ion of injection, and to realize the main doping of back of the body bottom application to channel layer, doping content is 4 * 10
18Cm
-3
5. feed aluminium source and gallium source in reative cell simultaneously, keeping reaction temperature is 800 ℃, controls flow well, and growth thickness is the AlN barrier layer of 3.5nm, and feeding the gallium source simultaneously is in order to increase the diffusivity of aluminium atom on the surface;
6. form Al
2O
3Gate dielectric layer: adopt ALD technology at 300 ℃ of deposit Al
2O
3Film, the 60s that in 600 ℃ of lower oxygen atmospheres, anneals then, obtaining thickness is the Al of 16nm
2O
3Layer, then to the sample surfaces positive-glue removing, rotating speed is 5000 to turn to/min, dries by the fire 10min again in temperature is 80 ℃ baking oven, by photoetching and be developed in source, drain region and form the required window of etching, adopt reactive ion etching process to remove the Al of source, drain region
2O
3Dielectric film;
7. photolithographic source, drain region: for better stripping metal, at first on sample, get rid of binder, rotating speed is 8000 commentaries on classics/min, time is 30s, in temperature is 160 ℃ high temperature oven, dry by the fire 20min, and then on this sample positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last dry by the fire 10min in temperature is 80 ℃ high temperature oven, photoetching obtains source, drain region window;
Evaporation source, leak metal: adopt four layers of metal of electron beam evaporation process deposit Ti/Al/Ni/Au;
9. peel off the source, leak metal and annealing: carry out ultrasonic processing after in acetone, soaking more than the 20min, dry up with nitrogen then.Sample is put into quick anneal oven anneals: at first fed nitrogen about 7 minutes to annealing furnace, under nitrogen atmosphere, temperature is to carry out the 30s short annealing under 800 ℃ of conditions then;
10. photoetched grid regional window: get rid of binder on sample, rotating speed is 8000 commentaries on classics/min, and the time is 30s; In being 160 ℃ high temperature oven, temperature dries by the fire 20min; And then on this sample positive-glue removing, rotating speed is 5000 commentaries on classics/min, at last dries by the fire 10min in temperature is 80 ℃ baking oven, photoetching obtains the area of grid window;
11. evaporation gate metal: adopt electron beam evaporation process deposition Ni/Au double layer of metal, subsequently sample is immersed in the stripper 2 minutes, obtain grid.So far finish the device manufacturing.
Embodiment
The present invention has simulated Al
2O
3The electrology characteristic of/AlN/GaN/AlN MOS-HEMT device is to prove the advantage of this device.Fig. 3 is traditional Al
2O
3/ AlGaN/GaN MOS-HMET device architecture figure, it and existing Al
2O
3/ AlN/GaN MOS-HMET device architecture is very similar, but barrier layer is Al
0.2Ga
0.8The N material.Fig. 4 has contrasted Al of the present invention
2O
3/ AlN/GaN/AlN MOS-HMET device and traditional Al
2O
3Output characteristic curve (the I of/AlGaN/GaN MOS-HMET device
Ds-V
Ds), wherein solid line is an analogue data, hollow dots is an experimental data.The output current density that the result is presented at device of the present invention under the identical drain voltage is obviously big than traditional devices, and this is because the AlN/GaN interface has bigger polarization charge densities and causes, thereby device of the present invention can be used to make high power device.Figure 5 shows that Al of the present invention under zero grid voltage
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3The comparison of the output characteristic curve of/AlN/GaN MOS-HEMT device.Analog result is presented at Al of the present invention in the situation that does not have the back end doping
2O
3The existing Al of maximum output current density ratio of/AlN/GaN/AlN MOS-HEMT device
2O
3/ AlN/GaN MOS-HEMT device is little a lot, this be because the negative interfacial polarization charge depletion of GaN/AlN channel electrons, the maximum output current density of device of the present invention had approached existing device after back end was mixed.This explanation back end doping techniques can reduce the at the interface negative polarization charge of GaN/AlN significantly to the exhausting of two-dimensional electron gas, and the electronics that the alms giver is provided is assembled to raceway groove under the polarization field effect, effectively improves two-dimensional electron gas.Fig. 6 and shown in Figure 7ly be respectively that device of the present invention and existing device leak the lattice temperature contour map at grid place, limit under zero grid voltage.Occurred significantly " focus " for existing device at leakage grid place, limit, and the focus diameter is bigger.The Temperature Distribution integral body of existing device is higher than device of the present invention, and in order to prove this point, Fig. 8 has contrasted that device of the present invention and existing device distribute in the lattice temperature of focus center vertical direction under zero grid voltage.The result shows and has device now and compare, the temperature of device of the present invention obviously reduces, thereby self-heating effect weakens, this is because the present invention has substituted Sapphire Substrate with the AlN single crystalline substrate, replaced traditional semi-insulating GaN epitaxial loayer with the AlN resilient coating, the thermal conductivity of AlN (2.85W/cmK) is higher than sapphire (0.35W/cmK) and GaN (1.6W/cmK), thereby the device heat dispersion improves greatly.Fig. 9 has compared Al of the present invention under the poised state
2O
3/ AlN/GaN/AlN MOS-HEMT device and existing Al
2O
3The conduction band structure of/AlN/GaN MOS-HEMT device, the result shows that device of the present invention has formed obvious AlN/GaN/AlN quantum well structure, the about 4.5eV of well depth, this structure has greatly improved the binding force of two-dimensional electron gas in raceway groove, has reduced the current collapse effect.And existing device channel is the triangle potential well, the about 1.1eV of well depth, and hot electron is easy to go out raceway groove and is captured by bulk trap under the electric current greatly, causes thermoelectronic effect and current collapse effect etc. to have a strong impact on device performance.
Claims (2)
1. Al
2O
3/ AlN/GaN/AlN MOS-HEMT device comprises: AlN single crystalline substrate (8) and the AlN cushion (7), GaN channel layer (6) and the AlN barrier layer (5) that form successively thereon, the upper Al that forms of AlN barrier layer (5)
2O
3Gate dielectric layer (4), source electrode (1) and drain electrode (3), and Al
2O
3The upper grid (2) that forms of gate dielectric layer (4), source electrode (1), drain electrode (3) form Ohmic contact, grid (2), Al with barrier layer (5) respectively
2O
3Gate dielectric layer (4) and AlN barrier layer (5) form the MOS structure, it is characterized in that: described device has adopted the AlN monocrystalline of reduced device self-heating effect of involuntary doping as substrate; Described AlN cushion (7) is involuntary doping, and thickness is 1-3 μ m; The silicon ion back end doping content of described GaN channel layer (6) is 4 * 10
18Cm
-3, thickness is 50-70nm.
2. manufacture method of device according to claim 1 is characterized in that may further comprise the steps:
1) go up along departing from the crystallographic axis 10 degree directions in AlN single crystalline substrate (8), utilize metal organic chemical vapor deposition technology with 20nm/ minute growth rate, growth thickness is the AlN resilient coating (7) of 1～3 μ m;
2) on AlN resilient coating (7), growing GaN channel layer (6), the temperature of growth response chamber is controlled between 800 ℃～950 ℃, and growth rate is 5nm/ minute, and thickness is 50～70nm, adopts the silicon ion injection technology to be mixed in GaN channel layer (6) back of the body end then;
3) go up growing AIN barrier layer (5) at GaN channel layer (6), the growth response temperature is 800 ℃, and growth rate is 2nm/ minute, and thickness is 3～5nm;
4) on AlN barrier layer (5), the Al that the employing atom layer deposition process is 15～20nm at 300 ℃ of deposit thickness earlier
2O
3Film, annealing formed Al in 60 seconds in 600 ℃ of lower oxygen atmospheres then
2O
3Gate dielectric layer (4);
5) Al
2O
3After gate dielectric layer (4) forms, by photoetching process in the source, the drain region forms the required window of etching, adopts reactive ion etching process to remove the Al of source, drain region
2O
3Dielectric film;
6) after etching is finished, utilize photoetching process to obtain source, drain region window, adopt electron beam evaporation process then, evaporation metal ohmic contact Ti/Al/Ni/Au forms source electrode (1) and drain electrode (3) on source, drain region window;
7) after source electrode (1), drain electrode (3) form, at Al
2O
3Utilize photoetching process to obtain the area of grid window on the gate dielectric layer (4), and adopt electron beam evaporation process evaporation gate metal Ni/Au at this area of grid window, form grid (2), finish the device manufacturing.
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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