CN101401317B - High frequency circuit component and communication apparatus using such high frequency circuit component - Google Patents

High frequency circuit component and communication apparatus using such high frequency circuit component Download PDF

Info

Publication number
CN101401317B
CN101401317B CN2007800091117A CN200780009111A CN101401317B CN 101401317 B CN101401317 B CN 101401317B CN 2007800091117 A CN2007800091117 A CN 2007800091117A CN 200780009111 A CN200780009111 A CN 200780009111A CN 101401317 B CN101401317 B CN 101401317B
Authority
CN
China
Prior art keywords
terminal
circuit
communication system
path
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800091117A
Other languages
Chinese (zh)
Other versions
CN101401317A (en
Inventor
萩原和弘
深町启介
釰持茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of CN101401317A publication Critical patent/CN101401317A/en
Application granted granted Critical
Publication of CN101401317B publication Critical patent/CN101401317B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
    • H04B7/0842—Weighted combining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/69—Spread spectrum techniques
    • H04B1/713—Spread spectrum techniques using frequency hopping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)
  • Radio Transmission System (AREA)
  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Abstract

A high frequency circuit component is provided with at least first and second antenna terminals, at least first and second transmission terminals for a first communication system, and at least first and second receiving terminals for the first communication system. The high frequency circuit component is also provided with two or more switch circuits and two or more filter circuits. The first transmission terminal for the first communication system can be connected to the first antenna terminal, the second transmission terminal for the first communication system can be connected to the second antenna terminal, the first receiving terminal for the first communication system can be connected to the first antenna terminal, and the second receiving terminal for the first communication system can be connected to the second antenna terminal.

Description

High frequency circuit components and utilized the communicator of this high frequency circuit components
Technical field
The present invention relates in order to carry out radio communication and high frequency circuit components that between antenna and transmission circuit, uses and the communicator that possesses this high frequency circuit components between electronic electric equipment.
Background technology
In recent years, mobile phone, WLAN, near radio standard bluetooth (bluetooth TM) wait the radio communication between electronic electric equipment to develop significantly.Along with the development of compoundization and the multifunction of radio communication device, developing the big goods of corresponding goods of the multiband that a plurality of communication systems are unified or conveying capacity etc.What wherein, get most of the attention is MIMO (Multiple-Input, the wireless communication system of mode of Multiple-Output).The MIMO communication system is through utilizing a plurality of transmitting antennas and a plurality of reception antenna; In the frequency band of needs, a plurality of signals being carried out spatial multiplexing transmits; Can under the situation that does not increase the service band width, improve the transmission capacity, thereby improve the utilization ratio of frequency band.
For example, the spy opens and discloses a kind of possess (a) receiver and (b) wireless communication system of transmitter for 2005-No. 318115, and wherein, said receiver possesses: a plurality of antennas; The signal that is received by a part of antenna is carried out the mechanism of branch; Mechanism with each signal multiplication after complex weight and the branch; Mechanism with the output signal plus that receives signal and weighting multiplying mechanism; According to the output signal of add operation mechanism, control the mechanism of complex weight for maximum mode according to the connect capacity of collecting mail number of channel; With the RF front end device (frontend) that generates baseband signal according to the output signal of add operation mechanism; Said transmitter possesses: a plurality of antennas; Generate the mechanism that sends signal; According to sending the RF front end device that signal generates the output signal generation RF transmission signal of mechanism; RF is sent the mechanism of signal branch; The mechanism that the output and the complex weight of branch multiplied each other; The output of weighting control mechanism is carried out the mechanism of add operation; With the feedback signal of basis from receiver, the weighting control mechanism of decision complex weight.
Because such MIMO communication system needs a plurality of antennas to reach and the RF front end device of antenna equal number, so, cause the formation of entire system complicated, components number is many.In the corresponding communication system of multiband, also depositing same problem.
Therefore, wait in expectation can be in the corresponding communication system of multiband, MIMO communication system etc. small-sized, the high frequency circuit components that components number is few of use.
Summary of the invention
The objective of the invention is to, provide a kind of can be in the corresponding communication system of multiband, MIMO communication system etc. use small-sized and high frequency circuit components that components number is few and utilized the communicator of this high frequency circuit components.
First high frequency circuit components of the present invention has: what first and second antenna terminal, first communication system were used at least at least the first sends terminal and first and second receives terminal, more than one switching circuit and plural filter circuit at least; The said first transmission terminal and said first that said first communication system is used receives terminal and can be connected with said first antenna terminal respectively, and the second reception terminal that said first communication system is used can be connected with said second antenna terminal.Through identical first and second reception terminal that communication system had is connected with the different antennas terminal, receiving circuit is moved simultaneously.And, can be connected with sending terminal and receive terminal through at least one that makes antenna terminal, can realize the miniaturization of high frequency circuit components.
What preferred first high frequency circuit components had that the second communication system uses at least the first sends terminal and first and second receives terminal at least; Said second communication system uses said first sends terminal and said first and receives terminal and can be connected with said first antenna terminal respectively, and the said second reception terminal that said second communication system uses can be connected with said second antenna terminal.
Second high frequency circuit components of the present invention has: at least first and second antenna terminal, first communication system use first and second sends terminal and first and second receives terminal, plural switching circuit and plural filter circuit at least at least; The said first transmission terminal and said first that said first communication system is used receives terminal and can be connected with said first antenna terminal respectively, and the said second transmission terminal and said second that said first communication system is used receives the terminal difference and can be connected with said second antenna terminal.
Preferred second high frequency circuit components has: first and second transmission terminal at least that the second communication system uses reaches first and second reception terminal at least; Said second communication system uses said first sends terminal and said first and receives terminal and can be connected with said first antenna terminal respectively, and what said second communication system used said second sends terminal and the said second reception terminal can be connected with said second antenna terminal respectively.
What preferred second high frequency circuit components had that third antenna terminal and said first communication system use the 3rd receives terminal, and said first communication system is used the said the 3rd receives terminal and can be connected with said third antenna terminal.
Preferred second high frequency circuit components has: third antenna terminal, said first communication system use the 3rd receive that terminal, said second communication system use the 3rd receive terminal, said first communication system is used the said the 3rd receive that terminal and said second communication system use the said the 3rd receive terminal and can be connected with said third antenna terminal respectively.
Preferred second high frequency circuit components has the 3rd transmission terminal that said first communication system is used, and said the 3rd transmission terminal that said first communication system is used can be connected with said third antenna terminal.
Preferred second high frequency circuit components have that said first communication system uses the 3rd send that terminal and said second communication system use the 3rd send terminal, said first communication system is used the said the 3rd send that terminal and said second communication system use the said the 3rd send terminal and can be connected with said third antenna terminal respectively.
Preferred first and second high frequency circuit components has the transmitting-receiving terminal that said third communication system uses respectively.
The plural amplifier circuit in low noise that preferred first and second high frequency circuit components has total supply power terminal respectively and amplifies to received signal.
The plural high-frequency amplifier circuit that preferred first and second high frequency circuit components has total supply power terminal respectively and the transmission signal is amplified.
The related high frequency circuit components of a preferred embodiment of the present invention has: at least first and second antenna terminal, first communication system use at least the first send terminal and at least first and second receive that terminal, second communication system use at least the first send terminal and first and second receives terminal at least, first path that (A) is connected with said first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use first send terminal path, (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal path, (c) be connected the path of the first reception terminal that said second channel splitting circuit and said second communication system use with (d) from said first switching circuit begun the to be linked in sequence path of the said first reception terminal that second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use; (B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal begun to be linked in sequence the 3rd channel splitting circuit, four-tape bandpass filter circuit and said first communication system use said second receive terminal the path be connected the path of the said second reception terminal that said the 3rd channel splitting circuit and said second communication system use with (b).
The related high frequency circuit components of another preferred embodiment of the present invention has: at least first and second antenna terminal, first communication system use at least first and second send terminal and at least first and second receive that terminal, second communication system use first and second sends terminal and first and second receives terminal at least at least, first path that (A) is connected with said first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal path, (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal path, (c) be connected the path of the said first reception terminal that said second channel splitting circuit and said second communication system use with (d) from said first switching circuit begun the to be linked in sequence path of the said first reception terminal that second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use; (B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal second switch circuit that begins to be linked in sequence; The 3rd channel splitting circuit; The 3rd high-frequency amplifier circuit; The path of the said second transmission terminal that four-tape bandpass filter circuit and said first communication system are used; (b) from said the 3rd channel splitting circuit the 4th high-frequency amplifier circuit that begins to be linked in sequence; The 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit the 4th channel splitting circuit that begins to be linked in sequence; The path of the said second reception terminal that the 6th band pass filter circuit and said first communication system are used; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path.
The related high frequency circuit components of the another preferred embodiment of the present invention has: at least the first～third antenna terminal, first communication system use at least first and second send that terminal and at least the first～3rd receive that terminal, second communication system use first and second sends terminal and at least the first～3rd and receives terminal at least, first path that (A) is connected with first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal path, (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal path, (c) be connected the path of the first reception terminal that said second channel splitting circuit and said second communication system use with (d) from said first switching circuit begun the to be linked in sequence path of the said first reception terminal that second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use; (B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal second switch circuit that begins to be linked in sequence; The 3rd channel splitting circuit; The 3rd high-frequency amplifier circuit; The path of the said second transmission terminal that four-tape bandpass filter circuit and said first communication system are used; (b) from said the 3rd channel splitting circuit the 4th high-frequency amplifier circuit that begins to be linked in sequence; The 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit the 4th channel splitting circuit that begins to be linked in sequence; The path of the said second reception terminal that the 6th band pass filter circuit and said first communication system are used; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path; (C) Third Road that is connected with the third antenna terminal directly has: (a) from third antenna terminal the 5th channel splitting circuit that begins to be linked in sequence; The path of said the 3rd reception terminal that the 7th band pass filter circuit and said first communication system are used; (b) connected that said the 5th channel splitting circuit and said second communication system use the said the 3rd receive terminal the path.
The related high frequency circuit components of another preferred embodiment of the present invention has: at least the first～third antenna terminal, first communication system use at least the first～the 3rd send that terminal and at least the first～3rd receive that terminal, second communication system use at least the first～the 3rd send terminal and at least the first～3rd and receive terminal, the path that (A) is connected with first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal path, (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal path, (c) be connected the path of the first reception terminal that said second channel splitting circuit and said second communication system use with (d) from said first switching circuit begun the to be linked in sequence path of the said first reception terminal that second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use; (B) path that is connected with second antenna terminal has: (a) from said second antenna terminal second switch circuit that begins to be linked in sequence; The 3rd channel splitting circuit; The 3rd high-frequency amplifier circuit; The path of the said second transmission terminal that four-tape bandpass filter circuit and said first communication system are used; (b) from said the 3rd channel splitting circuit the 4th high-frequency amplifier circuit that begins to be linked in sequence; The 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit the 4th channel splitting circuit that begins to be linked in sequence; The path of the said second reception terminal that the 6th band pass filter circuit and said first communication system are used; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path; (C) path that is connected with the third antenna terminal has: (a) from third antenna terminal the 3rd switching circuit that begins to be linked in sequence; The 5th channel splitting circuit; The 5th high-frequency amplifier circuit; The path of said the 3rd transmission terminal that the 7th band pass filter circuit and said first communication system are used; (b) from said the 5th channel splitting circuit the 6th high-frequency amplifier circuit that begins to be linked in sequence; The 8th band pass filter circuit; And said second communication system use the said the 3rd send terminal the path; (c) from said the 3rd switching circuit the 6th channel splitting circuit that begins to be linked in sequence; The path of said the 3rd reception terminal that the 9th band pass filter circuit and said first communication system are used; (d) from said the 6th channel splitting circuit begun to connect said second communication system uses the said the 3rd receive terminal the path.
More preferably said first receive between the terminal and have band pass filter circuit or circuit of high pass filter, between the said second reception terminal that said the 3rd channel splitting circuit and said second communication system use, have band pass filter circuit or circuit of high pass filter what said second channel splitting circuit and said second communication system used.Preferred low-pass filter circuit is connected with the outlet side of said high-frequency amplifier circuit.Between said switching circuit and said channel splitting circuit, be provided with and send the detecting circuit that signal is used, and said switching circuit is connected with a plurality of antenna terminals.
Preferably receive between terminal and each antenna terminal and be provided with low noise amplifier at each.The total respectively supply power terminal of said amplifier circuit in low noise, the total respectively supply power terminal of said high-frequency amplifier circuit.Preferably respectively send terminal and become balanced terminals.
Preferred high frequency circuit components of the present invention is the multilayer board of the one that is made up of a plurality of ceramic dielectric layers that are formed with the electric conductor pattern, has by said electric conductor pattern to constitute the multilayer board of inductance element and capacity cell and be equipped at least one semiconductor element on the said multilayer board.
Preferably in high frequency circuit components of the present invention; Said first and second that the part of said plural filter circuit and said first communication system are used receives terminal and is connected, with said filter circuit that said first and second reception terminal is connected between be provided with bucking electrode.
The part of preferred said plural filter circuit is connected with the said first transmission terminal and said first and second reception terminal that said first communication system is used respectively; With said first send filter circuit that terminal is connected and with filter circuit that said first and second reception terminal is connected between at least one, be provided with bucking electrode.
Preferably be formed with at least two antenna terminal electrodes, at least one transmitting terminal sub-electrode, at least two receiving terminal sub-electrodes, at least one grounding electrode and the controls of at least one circuit and use terminal electrode at least one face of said multilayer board; Said antenna terminal electrode is along first limit configuration of said multilayer board, and said transmitting terminal sub-electrode is along disposing with opposed second limit, said first limit.
The receiving terminal sub-electrode of the same communication system in the preferred said receiving terminal sub-electrode is away from configuration.Said receiving terminal sub-electrode disposes along said second limit.Said circuit is controlled with terminal electrode along the opposed limit configuration in the both sides on said first and second limit.
The related high frequency circuit components of another preferred embodiment of the present invention uses between antenna and transmission circuit; Have the be connected circuit controlled of said antenna with said transtation mission circuit and said reception terminal; It is the one multilayer board that constitutes by a plurality of ceramic dielectric layers that are formed with the electric conductor pattern; Constitute the multilayer board of inductance element and capacity cell and at least one semiconductor element of on said multilayer board, carrying constitutes by said electric conductor pattern; On the one side of said multilayer board, be formed with antenna terminal electrode, a plurality of transmitting terminal sub-electrode, a plurality of receiving terminal sub-electrode, a plurality of grounding electrode and the control of a plurality of circuit and use terminal electrode; Said antenna terminal electrode, said transmitting terminal sub-electrode and said receiving terminal sub-electrode are along the periphery configuration of said one side, and said circuit control is configured in its inboard with at least one of terminal electrode.
Preferred at least one supply power terminal is along the periphery configuration of said one side.Said antenna terminal electrode, said transmitting terminal sub-electrode, and said receiving terminal sub-electrode between terminal electrode except balance input/output terminal sub-electrode, dispose the control of said grounding electrode or said circuit and use terminal electrode.
Communicator of the present invention possesses any of above-mentioned high frequency circuit components.
(invention effect)
Have the high frequency circuit components of the present invention of above-mentioned characteristic, can realize the reduction of miniaturization and components number, preferably in the radio communication device of Multi-Frequency Signaling System, MIMO communication system etc., use.
Description of drawings
Fig. 1 (a) is the block diagram of circuit of the high frequency circuit components of expression one embodiment of the invention.
Fig. 1 (b) is the block diagram of circuit of the high frequency circuit components of expression another embodiment of the present invention.
Fig. 2 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 3 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 4 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 5 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 6 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 7 is the block diagram of circuit of the high frequency circuit components of expression the present invention another embodiment.
Fig. 8 is the block diagram of expression as a front end device portions example, the WLAN communicator of the communicator of the high frequency circuit components that has utilized one embodiment of the invention.
Fig. 9 is the block diagram of expression as a front end device portions example, the WLAN communicator of the communicator of the high frequency circuit components that has utilized another embodiment of the present invention.
Figure 10 is the figure of equivalent electric circuit of a part of the high frequency circuit components of expression one embodiment of the invention.
Figure 11 is the figure of equivalent electric circuit of an example of the high-frequency amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 12 is the figure of equivalent electric circuit of another example of the high-frequency amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 13 is the figure of equivalent electric circuit of an example of the low noise amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 14 is the figure of equivalent electric circuit of an example of the switching circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 15 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with an example of the configuration of terminal.
Figure 16 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with other examples of the configuration of terminal.
Figure 17 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with another example of the configuration of terminal.
Figure 18 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with another example of the configuration of terminal.
Figure 19 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with another example of the configuration of terminal.
Figure 20 is the vertical view of an example of configuration of terminal electrode at the back side (installed surface) of the multilayer board of expression one embodiment of the present of invention.
Figure 21 is the vertical view of another example of configuration of terminal electrode at the back side (installed surface) of the multilayer board of expression one embodiment of the present of invention.
Figure 22 is the stereogram of outward appearance of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 23 (a) is the block diagram of other examples of the switching circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 23 (b) is the block diagram of another example of the switching circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 23 (c) is the block diagram of another example of the switching circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 24 is the block diagram of circuit of the high frequency circuit components of expression an alternative embodiment of the invention.
Figure 25 is the block diagram of circuit of the high frequency circuit components of expression other embodiment of the present invention.
Figure 26 is the figure of expression each high-frequency signal in the high frequency circuit components of the present invention with an example of the configuration of terminal.
Figure 27 is the block diagram of circuit of the high frequency circuit components of expression another embodiment of the present invention.
Figure 28 (a) is the stereogram of the 1st layer～the 5th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 28 (b) is the stereogram of the 6th layer～the 10th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 28 (c) is the stereogram of electric conductor pattern of 11th layer～15th layer of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 28 (d) is the stereogram of the 16th layer～the 20th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 28 (e) is the 21st layer～the 24th layer electric conductor pattern and the stereogram of the terminal arrangement at the back side of the multilayer board of the expression high frequency circuit components that constitutes one embodiment of the invention.
Figure 29 (a) is the block diagram of the equivalent electric circuit in first path that is connected with first antenna terminal in the high frequency circuit components of expression Figure 28.
Figure 29 (b) is the block diagram of the equivalent electric circuit in second path that is connected with second antenna terminal in the high frequency circuit components of expression Figure 28.
Figure 30 (a) is the stereogram of the 1st layer～the 5th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes another embodiment of the present invention.
Figure 30 (b) is the stereogram of the 6th layer～the 10th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes another embodiment of the present invention.
Figure 30 (c) is the stereogram of electric conductor pattern of 11th layer～15th layer of the multilayer board of the expression high frequency circuit components that constitutes another embodiment of the present invention.
Figure 30 (d) is the stereogram of the 16th layer～the 20th layer electric conductor pattern of the multilayer board of the expression high frequency circuit components that constitutes another embodiment of the present invention.
Figure 30 (e) is the 21st layer～the 24th layer electric conductor pattern and the stereogram of the terminal arrangement at the back side of the multilayer board of the expression high frequency circuit components that constitutes another embodiment of the present invention.
Figure 31 (a) is the block diagram of the equivalent electric circuit in first path that is connected with first antenna terminal in the high frequency circuit components of expression Figure 30.
Figure 31 (b) is the block diagram of the equivalent electric circuit in second path that is connected with second antenna terminal in the high frequency circuit components of expression Figure 30.
Figure 31 (c) is the block diagram of the Third Road that is connected with third antenna terminal equivalent electric circuit directly in the high frequency circuit components of expression Figure 30.
Figure 32 is the figure of equivalent electric circuit of an example of the low noise amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 33 is the figure of equivalent electric circuit of an example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 34 is the figure of equivalent electric circuit of an example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 35 is the figure of equivalent electric circuit of another example of the high-frequency amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 36 is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 37 is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 38 is the figure of equivalent electric circuit of another example of the low noise amplifier circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 39 is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 40 is the figure of equivalent electric circuit of another example of the circuit of high pass filter that uses in the high frequency circuit components of the present invention of expression.
Figure 41 (a) is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 41 (b) is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Figure 41 (c) is the figure of equivalent electric circuit of another example of the band pass filter circuit that uses in the high frequency circuit components of the present invention of expression.
Embodiment
The high frequency circuit components of one embodiment of the invention has at least: at least the first of first and second antenna terminal, a communication system (first communication system) usefulness sends terminal and first and second receives terminal, more than one switching circuit and plural filter circuit at least; The first transmission terminal and first that said first communication system is used receives terminal and can be connected with first antenna terminal respectively, and the second reception terminal that said first communication system is used can be connected with second antenna terminal.The transmission terminal that can use the different second communication system of its additional frequency and receive terminal constitutes the high frequency circuit components that double frequency-band is used.Can increase the quantity of an employed transmission terminal of communication system (can each antenna terminal connect), also can increase an employed antenna terminal of communication system and receive the quantity of terminal.Through increasing antenna terminal and the quantity that receives terminal, compare with realize the situation of identical throughput (throughput) through an antenna, communication distance can be enlarged, thereby stable throughput can be expected to be difficult to by the position at terminal or aspect effect.
Switching circuit is used to path between antenna terminal and the transmission terminal and the path between antenna terminal and the reception terminal are switched.The configuration of switching circuit can be in the back level (transmitting-receiving terminals side) of the employed channel splitting circuit of branch in the transmitting-receiving path of each communication system, also can be in prime (antenna terminal side).Under the former situation, the transmitting-receiving path branches of a plurality of communication systems that channel splitting circuit is different with frequency, switching circuit switches with transmission terminal and reception the transmitting-receiving path of each communication system being connected of terminal.In the latter case; Switching circuit switched antenna terminal and being connected of transmit path and RX path; Channel splitting circuit branch transmit path in the transmit path; The transmission terminal of a plurality of communication systems that it is different with frequency connects, the channel splitting circuit branch RX path in the RX path, and the reception terminal of a plurality of communication systems that it is different with frequency connects.Owing to the quantity that can reduce switching circuit according to such formation, so, can realize cost degradation and miniaturization.This formation increases owing to receiving and dispatching the path, so, be suitable for the MIMO type high frequency circuit components that need repeatedly switch.
To receive signal in order decaying and to send the not signal beyond the signal, preferably in a communication system, plural filter circuit is set.Filter circuit configurable each transmit path and RX path a communication system.Filter circuit can be selected from circuit of high pass filter, band pass filter circuit, low-pass filter circuit etc. according to the filtering characteristic of necessity.
Preferably with antenna terminal with receive the RX path that terminal is connected in low noise amplifier circuit is set.At least possess under first and second situation that receives terminal a communication system, preferably in the RX path that each and each reception terminal is connected, dispose low noise amplifier circuit.The public supply power of preferred a plurality of low noise amplifier circuit.
The preferred public supply power of a plurality of high-frequency amplifier circuits that sends signal that amplifies.High-frequency amplifier circuit is arranged on the transmit path of the different a plurality of communication systems of frequency, has under the situation of plural transmit path a communication system, is arranged in each transmit path.If the public supply power of a plurality of high-frequency amplifier circuits then can reduce the circuit and the number of terminals of power supply.This formation can make many high frequency circuit components miniaturization of MIMO type and the cost degradations of circuit element that need supply power.
The circuit of the high frequency circuit components of Fig. 1 (a) expression one embodiment of the present of invention.This circuit has: two of using of two antenna terminal Ant1, Ant2, first communication systems send terminal Tx1-1, Tx1-2 and two receive that terminal Rx1-1, Rx1-2, second communication system use two and send terminal Tx2-1, Tx2-2 and two and receive terminal Rx2-1, Rx2-2.
The first antenna terminal Ant1 is connected with the first switching circuit SPDT1, and the first switching circuit SPDT1 is connected with the first channel splitting circuit Dip1 via the first detecting circuit DET1.The first channel splitting circuit Dip1 is connected with the first high-frequency amplifier circuit PA1 via low pass filter LPF1, and the first high-frequency amplifier circuit PA1 is connected with the first transmission terminal Tx1-1 that first communication system is used via the first band pass filter BPF1 and balancedunbalanced circuit BAL1.The first channel splitting circuit Dip1 also is connected with the second high-frequency amplifier circuit PA2 via low pass filter LPF2, and the second high-frequency amplifier circuit PA2 is connected with the first transmission terminal Tx2-1 that the second communication system uses via the second band pass filter BPF2 and balancedunbalanced circuit BAL2.The first switching circuit SPDT1 also is connected with the second channel splitting circuit Dip2 via low noise amplifier LNA1; The second channel splitting circuit Dip2 is connected with the first reception terminal Rx1-1 that first communication system is used via the 3rd band pass filter BPF3; And, be connected with the first reception terminal Rx2-1 that the second communication system uses.
The second antenna terminal Ant2 is connected with second switch circuit SPDT2, and second switch circuit SPDT2 is connected with the 3rd channel splitting circuit Dip3 via detecting circuit DET2.The 3rd channel splitting circuit Dip3 is connected with the 3rd high-frequency amplifier circuit PA3 via low pass filter LPF3, and the 3rd high-frequency amplifier circuit PA3 is connected with the second transmission terminal Tx1-2 that first communication system is used via four-tape bandpass filter BPF4 and balancedunbalanced circuit BAL3.The 3rd channel splitting circuit Dip3 also is connected with the 4th high-frequency amplifier circuit PA4 via low pass filter LPF4, and the 4th high-frequency amplifier circuit PA4 is connected with the second transmission terminal Tx2-2 that the second communication system uses via the 5th band pass filter BPF5 and balancedunbalanced circuit BAL4.Second switch circuit SPDT2 also is connected with the 4th channel splitting circuit Dip4 via low noise amplifier LNA2; The second channel splitting circuit Dip4 is connected with the second reception terminal Rx1-2 that first communication system is used via the 6th band pass filter BPF6; And, be connected with the second reception terminal Rx2-2 that the second communication system uses.
The circuit of the high frequency circuit components of Fig. 1 (b) expression another embodiment of the present invention.This circuit begins from the path that is connected with the second antenna terminal Ant2, and is except sending the path of terminal Tx1-2, Tx2-2 to first and second from switching circuit SPDT2, identical with the circuit shown in Fig. 1 (a).
Fig. 2 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit is provided with the transmitting-receiving terminal TxRx3 that third communication system uses in the high frequency circuit components shown in Fig. 1 (a).Therefore, between second switch circuit SPDT2 and low noise amplifier LNA2, has switching circuit SPDT4.
Also can replace switching circuit SPDT4; And between the antenna terminal Ant2 of Fig. 2 and some 2a, 2b, 2c shown in Figure 23 (a); The switching circuit of SP3T type is set, or shown in Figure 23 (b), coupling circuit CPL was set before switching circuit SPDT2; Or shown in Figure 23 (c), after switching circuit SPDT2, distributor circuit is set.
Fig. 3 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit be provided with in the high frequency circuit components shown in Fig. 1 (a) that third antenna terminal Ant3, first communication system use the 3rd receive that terminal Rx1-3, second communication system use the 3rd receive terminal Rx2-3.Third antenna terminal Ant3 is connected with channel splitting circuit Dip6 via low noise amplifier LNA3; Channel splitting circuit Dip6 is connected with the 3rd reception terminal Rx1-3 that first communication system is used via band pass filter BPF9; And, be connected with the 3rd reception terminal Rx2-3 that the second communication system uses.
Fig. 4 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit is provided with the transmitting-receiving terminal TxRx3 that third communication system uses in high frequency circuit components shown in Figure 3.Therefore, between third antenna terminal Ant3 and low noise amplifier LNA3, has switching circuit SPDT4.Also can replace switching circuit SPDT4, and coupler or the distributor circuit that is connected with transmitting-receiving terminal TxRx3 that third communication system uses is set.
Fig. 5 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit be provided with in the high frequency circuit components shown in Fig. 1 (a) that third antenna terminal Ant3, first communication system use the 3rd send that terminal Tx1-3 and the 3rd receives that terminal Rx1-3, second communication system use the 3rd send terminal Tx2-3 and the 3rd and receive terminal Rx2-3.Therefore; Third antenna terminal Ant3, first communication system use the 3rd send that terminal Tx1-3 and the 3rd receives that terminal Rx1-3, second communication system use the 3rd send terminal Tx2-3 and the 3rd and receive between the terminal Rx2-3, be provided with and the identical circuit shown in Fig. 1 (a).Particularly; The third antenna circuit SPDT3 that is connected with third antenna terminal Ant3 is connected with the 5th channel splitting circuit Dip5 via detecting circuit DET3; The 5th channel splitting circuit Dip5 is connected with the 5th high-frequency amplifier circuit PA5 via low pass filter LPF5, and the 5th high-frequency amplifier circuit PA5 is connected with the 3rd transmission terminal Tx1-3 that first communication system is used via the 7th band pass filter BPF7 and balancedunbalanced circuit BAL5.The 5th channel splitting circuit Dip5 also is connected with the 6th high-frequency amplifier circuit PA6 via low pass filter LPF6, and the 6th high-frequency amplifier circuit PA6 is connected with the 3rd transmission terminal Tx2-3 that the second communication system uses via the 8th band pass filter BPF8 and balancedunbalanced circuit BAL6.The 3rd switching circuit SPDT3 also is connected with the 6th channel splitting circuit Dip6 via low noise amplifier LNA3; The 6th channel splitting circuit Dip6 the 3rd receives terminal Rx1-3 and is connected via what the 9th band pass filter BPF9 and first communication system were used, and is connected with the 3rd reception terminal Rx2-3 that the second communication system uses.
Fig. 6 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit is provided with the transmitting-receiving terminal TxRx3 that third communication system uses in high frequency circuit components shown in Figure 5.Therefore, between the 3rd switching circuit SPDT3 and low noise amplifier LNA3, has the 4th switching circuit SPDT4.In this embodiment; Carry out the switching of transmit path and RX path by switching circuit SPDT1, SPDT2, SPDT3, carry out the division of communication system (first communication system) with the communication system (second communication system) of high frequency side of lower frequency side by channel splitting circuit Dip1～Dip6.
In this embodiment, each channel splitting circuit Dip1～Dip6 is constituted by low pass filter and high pass filter, but also can utilize other filter (band pass filter, notch filter etc.).In addition, if channel splitting circuit Dip1, Dip3, Dip5 have functions of low-pass filter, then can omit low pass filter LPF1～LPF6.
Each balancedunbalanced circuit BAL1～BAL6 has balance (differential) output from transceiver (transceiver) IC, is transformed to the function of imbalance (single-ended (single the end)) output of the input that is suitable for high-frequency amplifier circuit, but also can omits.Among this embodiment, reception terminal Rx1-1, Rx2-1, Rx1-2, Rx2-2, Rx1-3, Rx2-3 are output as uneven output.Therefore, the direct-connected balancedunbalanced circuit with transceiver IC can be set.
Each low noise amplifier LNA1～LNA3 also can be set at the outside of high frequency circuit components.
Preferred each detecting circuit DET1～DET3 comprises the diode detection circuit of directional coupler and the Schottky diode between SPDT switch and the channel splitting circuit etc.According to this formation, script needs the position of 6 (each PA is provided with 1) detecting circuits, can be reduced to 3.Certainly,, between high-frequency amplifier circuit PA and low pass filter LPF, coupling circuit CPL is set, also can uses detecting circuit function built-in in high-frequency amplifier circuit PA as detecting circuit even as prior art.
In this embodiment, the Wireless LAN system that can utilize the 2.4GHz frequency band is as first communication system, and the Wireless LAN system that utilizes the 5GHz frequency band is as the second communication system.Standard as WLAN; For example can enumerate: (a) according to OFDM (Orthogonal Frequency DivisionMultiples: modulation system OFDM); Support the IEEE802.11a of the high-speed data communication of maximum 54Mbps with the 5GHz frequency band; (b) according to DSSS (Direct Sequence SpreadSpectrum: mode DSSS); With can be at the ISM of the 2.4GHz that does not have freely to utilize under the situation of wireless permission (Industrial, Scientific and Medical: industry, science and medical treatment) frequency band; IEEE802.11b to the high-speed communication of 5.5Mbps and 11Mbps is supported reaches (c) according to the OFDM modulation system, supports the IEEE802.11g of the high-speed data communication of maximum 54Mbps with the 2.4GHz frequency band identical with IEEE802.11b.At present; The data communication that realizes based on the WLAN of these IEEE802.11 standards; Extensively be utilized in for example PC ancillary equipment such as personal computer (PC), printer, hard disk, broadband router, electronic equipments such as FAX, refrigerator, standard definition television (SDTV), high definition television (HDTV), digital camera, DV, mobile phone, the signal transmission mechanism that automobile is interior or aircraft is interior.
In the example shown in Fig. 1 (a), first communication system has been utilized the Wireless LAN system of 2.4GHz frequency band, and the second communication system has utilized the Wireless LAN system of the high 5GHz frequency band of frequency ratio first communication system.Each communication system has 2 and sends terminal and 2 reception terminals, and transmission circuit that is connected with the first antenna terminal Ant1 and the transmission circuit that is connected with the second antenna terminal Ant2 can move simultaneously.Therefore; Compare with employed branch collection (diversity) (only receiving and dispatching in 2) in the existing wireless LAN device in a side; Can make the data signaling rate high speed, and, compare with realize the situation of identical throughput through an antenna; Can enlarge communication distance, can realize being difficult for by the position at terminal and aspect effect, stable throughput.
In example shown in Figure 3; Receive appending of terminal Rx1-3, Rx2-3 through third antenna terminal Ant3 and the 3rd; Make that receiving bus is increased to three paths from two paths; According to the example shown in Fig. 1 (a), can realize the increase of receiving sensitivity, the expansion of communication distance and the raising of throughput.
In example shown in Figure 5, owing to appended the transmission circuit that is connected with third antenna terminal Ant3, so; Transceiver bus is increased to three paths from two paths; Compare with the example shown in Fig. 1 (a), can expect the increase of strength of transmitted signals and receiving sensitivity, and; Compare with example shown in Figure 3, can further realize the expansion of communication distance and the raising of throughput.
Because Fig. 2, Fig. 4 and example shown in Figure 6; Having the circuit that in Fig. 1 (a), Fig. 3 and example shown in Figure 5, has appended transmitting-receiving terminal TxRx3 respectively constitutes; So; For example, then can form and the corresponding front-end circuit of a plurality of wireless systems (WLAN of 2.4GHz frequency band and 5GHz frequency band and bluetooth) if will receive and dispatch terminal TxRx3 receives and dispatches terminal as bluetooth.
Figure 24 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit has been removed the circuit formation that the second antenna terminal Ant2～second sent terminal Tx1-2, Tx2-2 and the second reception terminal Rx1-2, Rx2-2 from circuit shown in Figure 4.The circuit of this embodiment have first and of sending that Tx1-1 and two of terminal receive that terminal Rx1-1, Rx1-3, second communication system use of of using of third antenna terminal Ant1, Ant3, first communication system send Tx2-1 and two of terminal and receive terminal Rx2-1, Rx2-3.That is, this circuit has each communication system and possesses a 1T2R structure that sends terminal and two reception terminals.
The first antenna terminal Ant1 is connected with the first switching circuit SPDT1, and the first switching circuit SPDT1 is connected with the first channel splitting circuit Dip1 via the first detecting circuit DET1.The lower frequency side of the first channel splitting circuit Dip1 is connected with the first high-frequency amplifier circuit PA1 via low pass filter LPF1, and the first high-frequency amplifier circuit PA1 is connected with the first band pass filter BPF1.The first band pass filter BPF1 is connected with the first transmission terminal Tx1-1 that first communication system is used via balancedunbalanced circuit BAL1.The high frequency side of the first channel splitting circuit Dip1 is connected with the second high-frequency amplifier circuit PA2 via low pass filter LPF2, and the second high-frequency amplifier circuit PA2 is connected with the second band pass filter BPF2.The second band pass filter BPF2 is connected via the first transmission terminal Tx2-1 that balancedunbalanced circuit BAL2 and second communication system use.
The first switching circuit SPDT1 also is connected with the second channel splitting circuit Dip2 via low noise amplifier LNA1, and the lower frequency side of the second channel splitting circuit Dip2 is connected with the first reception terminal Rx1-1 that first communication system is used via the 3rd band pass filter BPF3.The high frequency side of the second channel splitting circuit Dip2 is connected via the first reception terminal Rx2-1 that the tenth band pass filter BPF10 and second communication system use.But as shown in Figure 4, can the first reception terminal Rx2-1 that the second channel splitting circuit Dip2 and second communication system use be connected by band pass filter ground yet.And, can substitute band pass filter BPF, make the high pass filter HPF of the band attenuation lower through connection than passband, make and insert loss and effectively reduce.Certainly, this high frequency side at RX path is provided with the formation of band pass filter or high pass filter, also can be applied among the embodiment shown in Fig. 1～7 grades.
Circuit shown in Figure 24 also has: the transmitting-receiving terminal TxRx3 that the 3rd reception terminal Rx1-3 that third antenna terminal Ant3, first communication system are used, the 3rd reception terminal Rx2-3 that the second communication system uses and third communication system use.For the transmitting-receiving terminal TxRx3 that third communication system uses is set, between antenna terminal Ant3 and low noise amplifier LNA3, switching circuit SPDT4 is set.Low noise amplifier LNA3 is connected with channel splitting circuit Dip6, and the lower frequency side of channel splitting circuit Dip6 is connected with the 3rd reception terminal Rx1-3 that first communication system is used via band pass filter BPF9.The high frequency side of channel splitting circuit Dip6 is connected via the 3rd reception terminal Rx2-3 that band pass filter BPF11 and second communication system use.Switching circuit SPDT4 is connected with the transmitting-receiving terminal TxRx3 that third communication system uses.In addition, also can be as shown in Figure 4, the 3rd reception terminal Rx2-3 that channel splitting circuit Dip6 and second communication system use is not connected by band pass filter BPF11 ground.And, connect high pass filter HPF through replacing band pass filter BPF, can effectively reduce and insert loss.For the formation and configuration of switching circuit, channel splitting circuit, low noise amplifier, balancedunbalanced circuit, detecting circuit etc., can be identical with other embodiment.
Shown in figure 25, also can form the circuit that has omitted the transmitting-receiving terminal TxRx3 that switching circuit SPDT4 and third communication system use and constitute.
Non-existent formation in circuit shown in Figure 24 in the circuit shown in Figure 4 is to constitute (have each communication system and possess a 1T1R structure that sends a terminal and a reception terminal) from antenna terminal Ant2 to the circuit that sends terminal Tx1-2, Tx2-2 and reception terminal Rx1-2, Rx2-2.The 1T1R structure is as illustrated to Fig. 1 (a).The high frequency circuit components that can also be through making 1T1R structure and discrete, the combination of high frequency circuit components of above-mentioned 1T2R structure become each communication system on the whole and have two and send terminals and three 2T3R structures that receive terminals.
The foregoing description is the embodiment that has utilized the double frequency band-pass credit of first and second communication system; But under the situation of the single band communication that utilizes a communication system, as long as from the foregoing description, remove the transmission terminal of using with the second communication system and receive circuit formation and the channel splitting circuit that terminal is connected.If for example circuit shown in Figure 25 is used for single band communication, and remove the part corresponding with the second communication system, then become formation shown in Figure 27.Promptly; The first antenna terminal Ant1 is connected with the first switching circuit SDPT1; The first switching circuit SPDT1 is connected with the first high-frequency amplifier circuit PA1 via detecting circuit DET1 and low pass filter LPF1, and the first high-frequency amplifier circuit PA1 is connected with the first band pass filter BPF1.The first band pass filter BPF1 is connected with the first transmission terminal Tx1-1 that first communication system is used via balancedunbalanced circuit BAL1.The first switching circuit SPDT1 also is connected with low noise amplifier LNA1, and low noise amplifier LNA1 is connected with the first reception terminal Rx1-1 that first communication system is used via the 3rd band pass filter BPF3.The second antenna terminal Ant3 is connected with low noise amplifier LNA3, and low noise amplifier LNA3 is connected with the second reception terminal Rx1-3 that first communication system is used via band pass filter circuit BPF9.
Fig. 7 representes the circuit of the high frequency circuit components of another embodiment of the present invention.This circuit is the change example of circuit shown in Figure 2, and in order to obtain diversity, the second antenna terminal Ant2 that will be connected with switching circuit SPDT2 is divided into two antenna terminal Ant2a, Ant2b.Therefore, appended the switching circuit SPDT5 that is connected with two antenna terminal Ant2a, Ant2b.Also can two switching circuit SPDT2, SPDT5 be constituted the switching circuit of dual input lose-lose removing from mould.Can also switching circuit SPDT5 is external.Certainly, can in other embodiment, use this structure that obtains diversity.
Fig. 8 representes the fore-end of WLAN communicator, as an example of the communicator that has utilized high frequency circuit components of the present invention.Each antenna terminal Ant1～Ant3 of high frequency circuit components 101 of the present invention is connected with antenna.The first transmission terminal Tx2-1 and first that the first transmission terminal Tx1-1 that first communication system that is connected with the first antenna terminal Ant1 is used and the first reception terminal Rx1-1 and second communication system use receives terminal Rx2-1, is connected with RFIC-1 with first WLAN.The second transmission terminal Tx2-2 and second that the second transmission terminal Tx1-2 that first communication system that is connected with the second antenna terminal Ant2 is used and the second reception terminal Rx1-2 and second communication system use receives terminal Rx2-2, is connected with RFIC-2 with second WLAN.The 3rd transmission terminal Tx2-3 and the 3rd that the 3rd transmission terminal Tx1-3 that first communication system that is connected with third antenna terminal Ant3 is used and the 3rd reception terminal Rx1-3 and second communication system use receives terminal Rx2-3, is connected with RFIC-3 with the 3rd WLAN.First～the 3rd WLAN is connected with baseband I C with the WLAN that MIMO uses with RFIC1～3.The transmitting-receiving terminal TxRx3 that third communication system uses is connected with RFIC with bluetooth.
Fig. 9 representes the fore-end of WLAN communicator, as other examples of the communicator that has utilized high frequency circuit components of the present invention.Each antenna terminal Ant1～Ant3 of high frequency circuit components 101 of the present invention is connected with antenna.The first transmission terminal Tx1-1 and first that first communication system that is connected with the first antenna terminal Ant1 is used receives terminal Rx1-1 and is connected with RFIC-1 with first WLAN.The second transmission terminal Tx1-2 and second that first communication system that is connected with the second antenna terminal Ant2 is used receives terminal Rx1-2 and is connected with RFIC-2 with second WLAN.The 3rd transmission terminal Tx1-3 and the 3rd that first communication system that is connected with third antenna terminal Ant3 is used receives terminal Rx1-3 and is connected with RFIC-3 with the 3rd WLAN.First～the 3rd WLAN is connected with baseband I C with the WLAN that RFIC1～RFIC3 and MIMO use.The transmitting-receiving terminal TxRx3 that third communication system uses is connected with RFIC with bluetooth.
Figure 10 representes the equivalent electric circuit of the part of high frequency circuit components of the present invention.This equivalence circuit for example be equivalent in the circuit shown in Fig. 1 (a) the first antenna terminal Ant1, and first communication system use first send that terminal Tx1-1 and first receives that terminal Rx1-1, second communication system use first send the circuit part that terminal Tx2-1 and first receives between the terminal Rx2-1.
Between the first antenna terminal Ant1 and switching circuit SPDT1, be provided with the antiresonant circuit 28 that impedance component ls1 and capacity cell cs1 constitute, antiresonant circuit 28 is connected with switching circuit SPDT1 via capacity cell Ca.Preferably the resonance frequency with antiresonant circuit 28 is set at the secondary high order harmonic component frequency (about 10GHz) that the 5GHz frequency band sends signal.Thus, can suppress parasitic signal (spurious) from the second high-frequency amplifier circuit PA2, switching circuit SPDT1, detecting circuit 8 etc.
Figure 14 representes an example of the equivalent electric circuit of switching circuit SPDT1, certainly, also can constitute other formations as diode switching circuit.This equivalence circuit has circuit control with terminal VC1, VC2, is used to import the voltage that control switch circuit SPDT1 uses.
Switching circuit SPDT1 is connected with low noise amplifier LNA1.Figure 13 representes the equivalent electric circuit of low noise amplifier LNA1.Apply voltage via resistance R L3 and inductance L L1 to transistorized collector electrode through supply power terminal Vdd, and then, transistorized base stage is applied voltage via resistance R L2.In the present embodiment, owing to need amplify the receive frequency of 2.4GHz frequency band and 5GHz frequency band simultaneously, so preferred low-noise amplifier LNA1 has with 2.4GHz frequency band and 5GHz frequency band both sides and moves such broadband character.In order to realize this characteristic, be utilized in the resistance R L1 and the capacitor C L2 that are provided with between transistorized base stage and the collector electrode, a part of electric power of outlet side is fed back to input side.
Formation shown in Figure 10, except with RX path that the first antenna terminal Ant1 is connected, can also with RX path that the second antenna terminal Ant2 is connected in use.Under this situation and since with RX path that the 2nd Ant2 is connected in also configurable low noise amplifier LNA, so high-frequency circuit integral body possesses two low noise amplifiers.If use a supply power terminal, then can reduce power circuit to two low noise amplifier circuit service voltage Vdd.Particularly, by supply power terminal of electric conductor pattern branch, to each low noise amplifier circuit service voltage.
Low noise amplifier LNA1 is connected with channel splitting circuit (Dip2) 14.Channel splitting circuit 14 has: lower frequency side filter (low pass filter) that is made up of transmission lines lfr1 and the high frequency side filter (high pass filter) that is made up of capacity cell cfr2, cfr3, cfr4 and transmission lines lfr3.
The lower frequency side filter (low pass filter) of channel splitting circuit 14 is connected with the band pass filter circuit (BPF3) 6 that is made up of capacity cell cp1～cp7 and transmission lines lp1, lp2.Transmission lines lp1 and the coupling of transmission lines lp2 magnetic.
Band pass filter circuit 6 is connected with the first reception terminal Rx1-1 that first communication system is used.The first reception terminal Rx2-1 that the high frequency side filter (high pass filter) and the second communication system of channel splitting circuit 14 uses is connected.
The detecting circuit (DET1) 8 that is connected with switching circuit SPDT1 has the coupling circuit of main line lc1 and auxiliary line lc2 coupling; The end of auxiliary line lc2 is via resistance R c1 ground connection; The other end is connected with transmission lines lc3 with coupling; Be connected with the voltage smoothing circuit that constitutes by Schottky diode Ds, resistive element Rs and capacity cell Cs via resistance R c2, and then be connected with detection lead-out terminal Vdet.From the output power corresponding dc voltage of detection lead-out terminal Vdet output with first and second high-frequency amplifier circuit PA1, PA2.In addition, detecting circuit 8 can be integrated in high-frequency amplifier circuit.
The channel splitting circuit (Dip1) 13 that is connected with detecting circuit 8 comprises lower frequency side filter (low pass filter) and high frequency side filter (high pass filter); Wherein, Said lower frequency side filter is made up of transmission lines lft1, lft2 and capacity cell cft1, and said high frequency side filter is made up of capacity cell cft2, cft3, cft4 and transmission lines lft3.The circuit of these channel splitting circuits 13,14 constitutes the combination that is not limited to low pass filter and high pass filter, also can suitably change to other filter (band pass filter, notch filter etc.).
The low-pass filter circuit (LPF2) 19 that is connected with high frequency side filter (high pass filter) of channel splitting circuit 13 is made up of capacity cell cpa2, cpa3, cpa4 and transmission lines lpa1.Under the situation few, also can omit low-pass filter circuit 19 from the high order harmonic component generating capacity of the second high-frequency amplifier circuit PA2.In the circuit shown in Fig. 1 (a); Lower frequency side at channel splitting circuit Dip1 is connected with low-pass filter circuit LPF1; But here because channel splitting circuit Dip1 has the function of the low pass filter that is made up of transmission lines lft1, lft2 and capacity cell cft1 concurrently; So, do not need to use in addition low pass filter LPF1.
Connecting first and second high-frequency amplifier circuit PA1, PA2 on the channel splitting circuit 13 respectively with Figure 11 and equivalent electric circuit shown in Figure 12.The first high-frequency amplifier circuit PA1 comprises the control power circuit 84 and the output matching circuit 85 of the output power of power amplification circuit 82 that input matching circuit 81, secondary transistor form, supplied with constant voltage circuit 83, the control first high-frequency amplifier circuit PA1.The second high-frequency amplifier circuit PA2 comprises the control power circuit 94 and the output matching circuit 95 of the output power of power amplification circuit 92 that input matching circuit 91, three grades of transistors form, supplied with constant voltage circuit 93, the control second high-frequency amplifier circuit PA2.Used impedance component and capacity cell among each high-frequency amplifier circuit PA1, the PA2, and changed by MMIC (Microwave Monolithic IntegratedCircuits).Vcc1 and Vb1 represent service voltage and the bias voltage of the first high-frequency amplifier circuit PA1 respectively, and Vcc2 and Vb2 represent service voltage and the bias voltage of the second high-frequency amplifier circuit PA2 respectively.If form by a supply power supply with the first high-frequency amplifier circuit PA1 service voltage Vcc1 and the second high-frequency amplifier circuit PA2 service voltage Vcc2 (for example; Each high-frequency amplifier circuit PA1, the shared supply power terminal of PA2; Begin branch through the electric conductor pattern from said terminal; Formation to each high-frequency amplifier circuit PA1, PA2 service voltage), then can reduce circuit pattern and the number of terminals that supply power is used.
Be connected with band pass filter circuit (BPF1) 4 on the first high-frequency amplifier circuit PA1.Band pass filter circuit 4 is made up of capacity cell ctg1～ctg6 and transmission lines ltg1, ltg2, transmission lines ltg1 and the coupling of transmission lines ltg2 magnetic.Balancedunbalanced circuit 22 is connected with band pass filter circuit 4 with transmission lines via coupling, and the balanced terminals of balancedunbalanced circuit 22 is connected with the first transmission terminal Tx1-1 that first communication system is used.Be connected with band pass filter circuit (BPF2) 5 on the second high-frequency amplifier circuit PA2.Band pass filter circuit 5 is made up of capacity cell cta1～cta6 and transmission lines lta1, lta2, transmission lines lta1 and the coupling of transmission lines lta2 magnetic.Balancedunbalanced circuit 23 is connected with band pass filter circuit 5 with transmission lines via coupling, and the balanced terminals of balancedunbalanced circuit 23 is connected with the first transmission terminal Tx2-1 that the second communication system uses.
High frequency circuit components of the present invention is shown in figure 22, can constitute laminated member (having utilized the parts of ceramic multi-layer baseplate) 100.The basic circuit of this high frequency circuit components constitutes Fig. 4 and formation shown in Figure 10.On multilayer board 100, be formed with and be used for a plurality of terminal pad electrodes that the chip part that is not built in multilayer board is carried; On the terminal pad electrode, be equipped with the semiconductor element that switching circuit SPDT1, SPDT2, SPDT4, high-frequency amplifier circuit PA1～PA4, low noise amplifier LNA1～LNA3 use; And, Schottky diode, patch capacitor device, chip inductor and Chip-R are installed.Semiconductor element can be realized through resin-sealed or the seal of tube under the nude film state to the installation of terminal pad electrode.The terminal pad electrode is connected with circuit element (transmission lines and capacity cell) with connection lines in being formed on multilayer board 100 via via hole, thereby has constituted high frequency circuit components of the present invention.If high frequency circuit components is constituted multilayer board, then can realize miniaturization and cut down components number.Certainly, also can the RFIC and the baseband I C that constitute transmission circuit portion be compound on the multilayer board 100.
Multilayer board 100 for example can be through on each raw cook by 10～200 μ m that can constitute in low sintering ceramic dielectric material below 1000 ℃, thick; The conductive paste of the Ag of printing low-resistivity, Cu etc.; Form desirable electric conductor pattern, and will form a plurality of raw cooks of electric conductor pattern range upon range of for one, carry out sintering and make.Dielectric substance has the dielectric constant about 5～15; For example be that (a) is main component with Al, Si and Sr; With Ti, Bi, Cu, Mn, Na and K is the material of accessory ingredient, is main component with Al, Si and Sr (b), is the material of accessory ingredient with Ca, Pb, Na and K; (c) contain the material of Al, Mg, Si and Gd, (d) contain the material of Al, Si, Zr and Mg.Except ceramic dielectric material, can also use the composite material of resin, resin and ceramic electrolyte powder.Also can utilize by with Al 2O 3The ceramic dielectric material that is main body forms substrate, and metal that can high temperature sintering by tungsten or molybdenum etc. forms HTCC (the high temperature while Low fire ceramic) method of transmission lines etc.
In multilayer board 100,, then might cause the misoperation and the resonance of high-frequency amplifier circuit if the insulation between the input part of high-frequency amplifier circuit portion, power supply, efferent is not enough.Therefore, in order fully to guarantee the insulation between these circuit, the grounding electrode on plane and the via hole that links with grounding electrode have suitably been disposed.The preferred electrode that constitutes balanced-to-unbalanced transformer (balun) also disposes away from high-frequency amplifier circuit as far as possible.Thus, unwanted noise jamming can be reduced, receiving sensitivity can be improved from high-frequency amplifier circuit.
The part of the semiconductor element that the carried high-frequency amplifier circuit in multilayer board 100 is used is in order to improve thermal diffusivity, from the top louvre (thermal via) that is provided with to the back side.In order to suppress unwanted noise radiation, on raw cook, suitably formed broad grounding electrode.
In multilayer board 100, circuit constitutes three-dimensional.For the unnecessary electromagnetic interference between the electric conductor pattern that prevents forming circuit, preferably dispose the electric conductor pattern according to the mode of separating by grounding electrode (grounding electrode on plane and the via hole that links with grounding electrode) or on stacked direction, do not overlap.
Shown in figure 21, be formed with terminal electrode at the back side of multilayer board 100 (installed surface).In this example, be formed with wide grounding electrode Gnd, be formed with each terminal electrode with dual around shape at periphery at central portion.
The terminal electrode of outer circumferential side is first～third antenna terminal electrode Ant1～Ant3; First transmitting terminal sub-electrode Tx1-1+ that first communication system is used; Tx1-1-and second transmitting terminal sub-electrode Tx1-2+; Tx1-2-; First transmitting terminal sub-electrode Tx2-1+ that the second communication system uses; Tx2-1-and second transmitting terminal sub-electrode Tx2-2+; Tx2-2-; First～the 3rd receiving terminal sub-electrode Rx1-1～Rx1-3 that first communication system is used; First～the 3rd receiving terminal sub-electrode Rx2-1～Rx2-3 that the second communication system uses; The sending and receiving end sub-electrode TxRx3 that third communication system uses; Terminal electrode Vdet1 is used in circuit control; Vdet2; Vcc and grounding electrode Gnd.Circuit control is the detection lead-out terminal electrode of the first detecting circuit DET1 with terminal electrode Vdetl, and circuit control is the detection lead-out terminal electrode of the second detecting circuit DET2 with terminal electrode Vdet2.Circuit control with terminal electrode Vcc be high-frequency amplifier circuit PA1～PA4 public, distinguish the terminal electrode of service voltage to it.If voltage supplied be arranged at outer circumferential side, then being connected of external element become easy with circuits needed patch capacitor device etc. with the voltage supply with terminal electrode Vcc.
For the insulation between the input and output terminal that improves high-frequency signal, between input and output terminal, dispose the control of grounding electrode Gnd or circuit and use terminal electrode.But owing in balanced-to-unbalanced transforming circuit, need carry out the impedance conversion of 50:100 or 50:150 etc. simultaneously, with the impedance setting of its lead-out terminal for being higher than 50 Ω, so, preferably do not make ground connection Gnd and balanced terminals adjacency.In addition, because balance output is compared with imbalance output, the patience of common-mode noise is high relatively, so, can dispose the balanced terminals of other system continuously.
In the terminal electrode of all sides be that circuit control is with terminal electrode VC1-1, VC2-1, VC2-2, VC1-3, VC2-3, Vdd1-3, Vdd1-2, Vb2-2, Vb1-2, Vb1-1, Vb2-1, Vdd1-1.Terminal electrode Vc1-1, VC2-1 are that electrode is used in the control of the first switching circuit SPDT1; Terminal electrode VC1-1, VC2-the 2nd, electrode is used in the control of second switch circuit SPDT2; Terminal electrode VC1-3, VC2-3 are that electrode is used in the control of the 4th switching circuit SPDT4; Terminal electrode Vdd1-1 is that electrode is used in the control of the first low noise amplifier LNA1; Terminal electrode Vdd1-2 is that electrode is used in the control of the second low noise amplifier LNA2, and terminal electrode Vdd1-3 is that the 3rd low noise amplifier LNA3 uses amplifier.Terminal electrode Vb1-1 is that electrode is used in the control of the first high-frequency amplifier circuit PA1; Terminal electrode Vb2-1 is that electrode is used in the control of the second high-frequency amplifier circuit PA2; Terminal electrode Vb1-2 is that electrode is used in the control that the 3rd high-frequency amplifier circuit PA3 uses, and terminal electrode Vb2-2 is that electrode is used in the control that the 4th high-frequency amplifier circuit PA4 uses.
In the present embodiment terminal electrode is made as LGA (Land Grid Array), but can certainly adopts BGA (Ball Grid Array) etc.
Figure 20 representes and terminal arrangement contrast shown in Figure 21, with the input/output terminal sub-electrode of high-frequency signal, circuit control all is configured in central authorities with terminal electrode and grounding electrode the example of grounding electrode on the week on every side.If carry out terminal arrangement shown in Figure 20, then because the number of the terminal electrode that occurs in the periphery of multilayer board 100 is many, so, must cause multilayer board 100 to maximize.In addition; Make multilayer board 100 miniaturizations if want with terminal arrangement shown in Figure 20; The number of grounding electrode Gnd is lacked than example shown in Figure 21; Can make the interelectrode insulation of the input and output terminal of high-frequency signal reduce thus, because of the instabilityization of Gnd current potential causes the resonance of high-frequency amplifier circuit, causes the increase of parasitic signal etc. because of the deterioration of filtering characteristic.
With reference to Figure 15～Figure 19, the configuration with terminal describes to each high-frequency signal in the high frequency circuit components that constitutes multilayer board 100.
The configuration of the terminal when Figure 15 representes that the high frequency circuit components with Fig. 2 constitutes multilayer board 100.Dispose first and second antenna terminal electrode A nt1, Ant2 on one side of multilayer board 100; Dispose transmitting terminal sub-electrode group Tx1-1, Tx1-2, Tx2-1, Tx2-2 on its opposed limit; Dispose the first receiving terminal sub-electrode group Rx1-1, Rx2-1 on a horizontal limit, dispose the sending and receiving end sub-electrode TxRx3 that the second receiving terminal sub-electrode group Rx1-2, Rx2-2 and third communication system use on its opposed limit.
The configuration of the terminal when Figure 16 is illustrated in high frequency circuit components with Fig. 7 and constitutes multilayer board 100.This terminal arrangement is except on the limit identical with first and second antenna terminal electrode A nt1, Ant2 (Ant2a of Fig. 7), having added the third antenna terminal electrode Ant3 (Ant2b of Fig. 7), and is identical with terminal arrangement shown in Figure 15.
Figure 17 is illustrated in the face of multilayer board 100 of high frequency circuit components of pie graph 4 to have disposed another example of terminal electrode around shape.Dispose first～third antenna terminal electrode Ant1～Ant3 on one side of multilayer board 100; Dispose the first transmitting terminal sub-electrode group Tx1-1, Tx2-1, the second receiving terminal sub-electrode group Rx1-2, Rx2-2 and the second transmitting terminal sub-electrode group Tx2-1, Tx2-2 successively on opposed limit with it; Dispose the first receiving terminal sub-electrode Rx1-1, Rx2-1 on a horizontal limit, disposing the sending and receiving end sub-electrode TxRx3 that the 3rd receiving terminal sub-electrode group Rx1-3, Rx2-3 and third communication system use on the opposed limit with it.
Figure 18 is illustrated in the face of multilayer board 100 of high frequency circuit components of pie graph 4 to have disposed the example of terminal electrode around shape.This terminal arrangement except the transmitting-receiving terminal TxRx3 that third communication system is used transfer to the limit identical with the antenna terminal electrode, with the second receiving terminal sub-electrode group Rx1-2, Rx2-2 transfers to the 3rd receiving terminal sub-electrode group Rx1-3, the Rx2-3 identical limit, identical with terminal arrangement shown in Figure 17.
Figure 19 is illustrated in the face of multilayer board 100 of high frequency circuit components of pie graph 6 to have disposed the example of terminal electrode around shape.On a limit of multilayer board 100, dispose first～third antenna terminal electrode Ant1～Ant3; Dispose first in order sends terminal group Tx1-1, Tx2-1, the second receiving terminal sub-electrode group Rx1-2, Rx2-2, second and sends terminal group Tx2-1, Tx2-2 and the 3rd transmitting terminal sub-electrode group Tx1-3, Tx2-3 on opposed limit with it; On a horizontal limit, dispose the first receiving terminal sub-electrode group Rx1-1, Rx2-1, disposing the sending and receiving end sub-electrode TxRx3 that the 3rd receiving terminal sub-electrode group Rx1-3, Rx2-3 and third communication system use on the opposed limit with it.
Figure 26 is illustrated on the face of multilayer board of the high frequency circuit components that constitutes Figure 24 with the terminal around the shape configuration.Dispose the sending and receiving end sub-electrode TxRx3 that antenna terminal electrode A nt1, Ant3 and third communication system use at the one of which avris, on its opposed limit, dispose transmitting terminal sub-electrode group Tx1-1, Tx2-1 and receive terminal group Rx1-1, Rx2-1, Rx1-3.Dispose the 3rd reception terminal Rx2-3 that the second communication system uses on horizontal one side.
As stated; Through with antenna terminal electrode group and transmitting terminal sub-electrode group isolation configuration at opposed edge; Can reduce mutual interference, the output signal feedback that can avoid high-frequency amplifier circuit is in the input of high-frequency amplifier circuit and cause the unfavorable conditions such as resonance of high-frequency amplifier circuit.If make first to receive terminal group and second and receive terminal group not in abutting connection with (for example folder is established GND terminal or supply power terminal etc. or is disposed at different limits), the reception signal that then can avoid other system becomes noise and makes the unfavorable condition of receiving sensitivity deterioration.Preferably will become the input and output terminal of high-frequency signal antenna terminal, send terminal and receive terminal and be configured to not adjacency, and grounding electrode is set between it or terminal electrode is used in circuit control.
Figure 28 (a)～Figure 28 (e) expression is by the part of the electric conductor pattern of integrated multilayer board each layer that constitute, high frequency circuit components of the present invention afterwards of a plurality of dielectric layers that will form the electric conductor pattern.Multilayer board shown in Figure 28 is made up of 24 layers dielectric layer, is formed with the external connection terminals electrode at the 24th layer the back side.The equivalent electric circuit in first path that Figure 29 (a) representes to be connected with first antenna terminal in this high frequency circuit components, the equivalent electric circuit in second path that Figure 29 (b) expression is connected with second antenna terminal.This high frequency circuit components is that the frequency band with 2.4GHz is made as first communication system, double frequency-band WLAN that the frequency band of 5GHz is made as the second communication system is used front-end module, is that each communication system has one and sends terminal and two 1T2R types that receive terminals.
In first path; Between antenna terminal Ant1 and single-pole double-throw type (SPDT) switching circuit S1; Dispose the low-pass filter circuit that is made up of inductance element ls5, ls6, ls9～ls11 and capacity cell cs1, cs4, cs5, cs6, capacity cell CS11 is connected with switching circuit S1.Preferably this low-pass filter circuit is set at 2 times of ripples and the 3 times of wave attenuations that make the 5GHz frequency band.V1, V2 are the terminals that input is used for the voltage of control switch circuit S1.Low noise amplifier LNA1 is connected with switching circuit S1 via capacity cell CS13.Figure 32 representes the equivalent electric circuit of low noise amplifier LNA1.VccRx is the supply power of LNA1, via resistance R L13 and inductance L L11 the collector electrode of transistor Tr 1 is applied voltage.Via resistance R L12 the base stage of transistor Tr 1 is applied voltage.B1 is used to prevent that low noise amplifier is because of the excessive saturated biased witch of signal input.In the present embodiment, owing to need amplify the receive frequency of 2.4GHz frequency band and 5GHz frequency band simultaneously, so, preferably have wide band low noise amplifier characteristic with action from the 2.4GHz frequency band to 5GHz frequency band both sides.
The receiver side channel splitting circuit is connected with low noise amplifier LNA1.The lower frequency side filter (low pass filter) of this channel splitting circuit is made up of transmission lines l1ff1, and high frequency side filter (high pass filter) is made up of capacity cell c1ff1, c1ff3, c1ff5 and transmission lines l1ff2, l1ff4.On the lower frequency side filter (low pass filter) of this channel splitting circuit, be connected with band pass filter circuit 2.4G BPF_Rx1.Shown in figure 33, band pass filter circuit 2.4G BPF_Rx1 is made up of capacity cell cplg1, cplg2, cplg4～cplg7 and transmission lines lplg1, lplg2, transmission lines lplg1 and the coupling of transmission lines lplg2 magnetic.On band pass filter circuit 2.4G BPF_Rx1, be connected with the first reception terminal Rx1-2G that first communication system is used.And, on the high frequency side filter (high pass filter) of channel splitting circuit, be connected with band pass filter circuit 5G HPF_Rx1.Shown in figure 34, band pass filter circuit 5G HPF_Rx1 is made up of capacity cell cpla1～cpla5 and transmission lines lpla1, lpla2.On band pass filter circuit 5G HPF_Rx1, be connected with the first reception terminal Rx1-5G that the second communication system uses.
On switching circuit S1, be connected with the transmitter side channel splitting circuit.This transmitter side channel splitting circuit comprises lower frequency side filter (low pass filter) and high frequency side filter (high pass filter); Wherein, Said lower frequency side filter is made up of transmission lines ltd1, ltd2 and capacity cell ctd1, and said high frequency side filter is made up of capacity cell ctd2～ctd4 and transmission lines ltd3.The formation of these channel splitting circuits is not limited to the combination of low pass filter and high pass filter, can also carry out suitable change, for example can utilize other filter (band pass filter, notch filter etc.).
Be connected with detecting circuit on the transmitter side channel splitting circuit.The lower frequency side detecting circuit has the coupling circuit of main line lcb1 and auxiliary line lcb2 coupling; The end of auxiliary line lcb2 is via resistance R C1 ground connection; The other end is connected with the voltage smoothing circuit that is made up of Schottky diode D1, resistive element RC2 and capacity cell CC1, and then is connected with detection lead-out terminal DET.From the output power corresponding dc voltage of detection lead-out terminal DET output with high-frequency amplifier circuit 2.4G HPA.The high frequency side detecting circuit has the coupling circuit of main line lca1 and auxiliary line lca2 coupling; The end of auxiliary line lca2 is via resistance R C3 ground connection; The other end is connected with the voltage smoothing circuit that is made up of Schottky diode D2, resistive element RC4 and capacity cell CC2, and then is connected with detection lead-out terminal DET.From the output power corresponding dc voltage of detection lead-out terminal DET output with high-frequency amplifier circuit 5G HPA.Detection lead-out terminal DET by shared be the lead-out terminal of lower frequency side detecting circuit and high frequency side detecting circuit.In addition, detecting circuit DET also can be integrated in high-frequency amplifier circuit.
Between the high frequency side filter (high pass filter) and high frequency side detecting circuit of transmitter side channel splitting circuit, be connected with the LPF appliance circuit that constitutes by capacity cell ctd5～ctd7 and transmission lines ltd4.This low-pass filter circuit can omit under the few situation of the high order harmonic component generation of high-frequency amplifier circuit 5G HPA.Between the lower frequency side filter (low pass filter) and high-frequency amplifier circuit 2.4G HPA of transmitter side channel splitting circuit, be connected with the low-pass filter circuit that constitutes by ccb1, ccb2, ccb3, lcb1, lcb3.The transmission lines lcb1 of this low-pass filter circuit can also be used as the main line of lower frequency side detecting circuit.
High-frequency amplifier circuit 2.4G HPA that Figure 35 representes to be connected with the transmitter side channel splitting circuit and the equivalent electric circuit of 5GHPA.The first half of Figure 35 is represented the high-frequency amplifier circuit of lower frequency side, and the latter half is represented the high-frequency amplifier circuit of high frequency side.Because the supply power line of these high-frequency amplifier circuits is connected with public supply power terminal VccPA, so, the quantity of power circuit pattern, power supply terminal, tyre patch capacitor device etc. can be reduced.The control power circuit 105 of the output power of the power amplification circuit 103 that the high-frequency amplifier circuit 2.4G HPA of lower frequency side is made up of input matching circuit 102, two-staged transistor, supplied with constant voltage circuit 104, control high-frequency amplifier circuit 2.4G HPA, and output matching circuit 106 constitute.And high-frequency amplifier circuit 5G HPA by the control power circuit 110 of the output power of input matching circuit 107, three grades of power amplification circuits that transistor constitutes 108, supplied with constant voltage circuit 109, control high-frequency amplifier circuit 5GHPA, and output matching circuit 111 constitute.Can in the middle of separately, use inductance element and capacity cell.These high-frequency amplifier circuits also can be by MMICization.Vbb2G and Vbb5G are respectively the bias voltages of the high-frequency amplifier circuit of lower frequency side and high frequency side.
On high-frequency amplifier circuit 2.4G HPA, be connected with band pass filter circuit 2.4G BPF_Tx.Shown in figure 36, band pass filter circuit 2.4G BPF_Tx is made up of capacity cell cpg1, cpg2, cpg4～cpg7 and transmission lines lpg1, lpg2, transmission lines lpg1 and the coupling of transmission lines lpg2 magnetic.On band pass filter circuit 2.4G BPF_Tx, be connected with balancedunbalanced circuit 2.4G Balun, the balanced terminals of balancedunbalanced circuit 2.4G Balun is connected with the first transmission terminal TX_2G_1, TX_2G_2 that first communication system of lower frequency side is used.
On high-frequency amplifier circuit 5G HPA, be connected with band pass filter circuit 5G BPF_Tx.Shown in figure 37; Band pass filter circuit 5G BPF_Tx is made up of capacity cell cppa1b, cppa2a, cppa2b, cppa3, cppa4, cppa4a, cppa5 and transmission lines lppa1a, lppa1a1, lppa2; Transmission lines lppa1a, transmission lines lppa1a1 and the coupling of transmission lines lppa2 magnetic have constituted three grades band pass filter circuit.On band pass filter circuit 5G BPF_Tx, be connected with balancedunbalanced circuit 5G Balun, the balanced terminals of balancedunbalanced circuit 5G Balun is connected with the first transmission terminal TX_5G_1, TX_5G_2 that the second communication system of high frequency side uses.
Shown in Figure 29 (b), antenna terminal Ant2 is connected with single-pole double-throw type (SPDT) switching circuit S2 via capacity cell CS21.V3 and V4 are the terminals of supplying with the voltage that is used for control switch circuit S2.The terminal BLT of Bluetooth is connected with switching circuit S2 via capacity cell CS22, and low noise amplifier LNA3 connection connects via capacity cell CS23 switching circuit S2.Figure 38 representes the equivalent electric circuit of low noise amplifier LNA3.In this equivalence circuit, VccRx is the supply power of LNA3, applies voltage via resistance R L23 and inductance L L21 to the collector electrode of transistor Tr 3.Supply power VccRx is also shared by low noise amplifier LNA1 and LNA3, can realize the miniaturization of high frequency circuit components.And then, apply voltage via resistance R L22 to the base stage of transistor Tr 3.B2 is used to prevent that low noise amplifier is because of the excessive saturated biased witch of signal input.In the present embodiment, owing to need amplify the receive frequency of 2.4GHz frequency band and 5GHz frequency band simultaneously, so, preferably have wide band low noise amplifier characteristic with 2.4GHz frequency band and 5GHz frequency band both sides action.
Be connected with the receiver side channel splitting circuit on the low noise amplifier LNA3.The receiver side channel splitting circuit comprises lower frequency side filter (low pass filter) and high frequency side filter (high pass filter); Wherein, Said lower frequency side filter is made up of transmission lines l2ff1, and said high frequency side filter is made up of capacity cell c2ff1, c2ff3, c2ff5 and transmission lines l2ff2, l2ff4.On the lower frequency side filter (low pass filter) of receiver side channel splitting circuit, be connected with band pass filter circuit 2.4G BPF_Rx2.Shown in figure 39, band pass filter circuit 2.4G BPF_Rx2 is made up of capacity cell cp2g1, cp2g2, cp2g4～cp2g7 and transmission lines lp2g1, lp2g2, transmission lines kp2g1 and the coupling of transmission lines lp2g2 magnetic.On band pass filter circuit 2.4G BPF_Rx2, be connected with the second reception terminal Rx2-2G that first communication system is used.Be connected with circuit of high pass filter 5G HPF_Rx2 on the high frequency side filter (high pass filter) of receiver side channel splitting circuit.Shown in figure 40, circuit of high pass filter 5G HPF_Rx2 is made up of capacity cell cp2a1～cp2a5 and transmission lines lp2a1, lp2a2.On circuit of high pass filter 5G HPF_Rx2, be connected with the second reception terminal Rx2-5G that the second communication system uses.
Utilize Figure 28, the electric conductor pattern of each layer the when high frequency circuit components that will have the equivalent electric circuit shown in Figure 29 (a) and Figure 29 (b) is constituted multilayer board describes.The capacity cell in the circuit element and the part of inductance element are made up of the electric conductor pattern that is formed at dielectric layer.The capacity cell of semiconductor element, a part and inductance element, resistive element carry the surface at multilayer board.On each limit at the back side of multilayer board,, be formed with the grounding electrode of rectangle in the inboard of terminal electrode group to be arranged with the terminal electrode group of supply power, control power supply, input signal, output signal, antenna, ground connection around shape.If the back side of multilayer board have opposed first limit, second limit, and and the 3rd limit and the 4th limit of their quadratures; Then can each antenna terminal electrode all be disposed along first limit; The receiving terminal sub-electrode of a transmitting terminal sub-electrode and a part is disposed along second limit, remaining receiving terminal sub-electrode is configured in the 3rd or the 4th limit position near second limit.Circuit controls such as supply power terminal electrode, control power supply terminal electrode are all disposed along the 3rd and the 4th limit with terminal electrode.Configuration based on such terminal electrode; Under the situation of such this front-end module of connection shown in Fig. 8 or 9; The path that high-frequency signal flows through between front-end module and RF-IC is the shortest, can realize the low lossization of communication equipment, the influence that the reduction extraneous noise is brought.
In Figure 28, with the symbolic representation capacity cell of " c " beginning, with the symbolic representation inductance element of 1 beginning, with the symbolic representation grounding electrode of " e " beginning.The point of black is represented through hole.The 24th layer is the power line layer that is used to lead back the power line that is connected with the power supply terminal at the back side.Lr11 is connected with ground floor via through hole by the shared power circuit of receiver side low noise amplifier in first path and second path, in ground floor, branches into the low noise amplifier in first path and second path.The power supply of high-frequency amplifier circuit is connected with ground floor via through hole, in ground floor, branches into 2.4GHz and uses high-frequency amplifier circuit with high-frequency amplifier circuit and 5GHz.Almost be formed with grounding electrode at whole face in the 23rd layer, the power line layer is by the grounding electrode clamping of the 23rd layer grounding electrode and dorsal part.Capacity cell C and inductance component L are formed on the dielectric layer above the 23rd layer.The 5GHz RX path that is connected with first antenna terminal and the 5GHz RX path that is connected with second antenna terminal spread all over the 4th layer～the 20th layer and form respectively.
Circuit of high pass filter is formed on each bight of the 4th layer～the 16th layer; Cpla1a, cpla3a, cpla1b, cpla2a, cpla3b are the electrodes of formation capacity cell C of the high pass filter of the RX path that is connected with first antenna terminal; Lpla1a, lpla2a, lpla1b, lpla2b are the electrodes of formation inductance component L of the high pass filter of the RX path that is connected with first antenna terminal; Cp2a1a, cp2a3a, cp2a1b, cp2a2, cp2a3b are the electrodes of formation capacity cell C of the high pass filter of the RX path that is connected with second antenna terminal, and lp2a1a, lp2a2a, lp2a1b, lp2a2b are the electrodes of formation inductance component L of the high pass filter of the RX path that is connected with second antenna terminal.For the miniaturization of high frequency circuit components, these high-frequency filter circuits are disposed by approaching with electrode.For this reason, between filter circuit, be provided with bucking electrode.In example shown in Figure 28, bucking electrode is the linearity through hole electrode row (being surrounded by the ellipse of dotted line) that are connected with grounding electrode.Through hole electrode is listed as the mode according to the grounding electrode that connects the 3rd layer and the 16th layer, connects dielectric layer therebetween.The part of the 3rd layer grounding electrode is a band electrode, is connected with the through hole electrode that separates predetermined distance along its length on the band electrode.The 16th layer grounding electrode is configured to be roughly rectangular-shaped, overlook down with circuit of high pass filter overlapping, to lean on than the 16th layer down layer on other circuit of formation shield.On the dielectric layer of the 9th layer～11th layer that forms inductance element, with the 3rd layer of grounding electrode that likewise is formed with band shape.Through so through hole electrode being made as bucking electrode, can obtain high insulating properties.In addition, the through hole electrode row can connect multilayer board integral body, but as long as shielding connects necessary part.
The band pass filter circuit that is provided with in 2.4GHz that is connected with first antenna terminal and the transmit path of 5GHz mainly is formed on the 3rd layer～the 12nd layer respectively.Band pass filter circuit is set up the left side of circuit of high pass filter in the drawings; Cpg1b, cpg2a, cpg2b, cpg3b, cpg4a, cpg4b, cpg5 are the electrodes of formation capacity cell C of the band pass filter circuit of the 2.4GHz transmit path that is connected with first antenna terminal; Lpg1a～lpg1c, lpg2a～lpg2c are the electrodes of formation inductance component L of the circuit of high pass filter of the 2.4GHz transmit path that is connected with first antenna terminal; Cppa1b, cppa2a, cppa2b, cppa4, cppa4a, cppa4b, cppa5 are the electrodes of formation capacity cell C of the band pass filter circuit of the 5GHz transmit path that is connected with first antenna terminal, and lppa0a, lppa0b, lppa1b, lppa1b1, lppa1c1, lppa2b, lppa2c are the electrodes of formation inductance component L of the band pass filter circuit of the 5GHz transmit path that is connected with first antenna terminal.
In the 14th layer～the 23rd layer, be formed with the electrode of the balancedunbalanced circuit that is connected with 2.4GHz and 5GHz transmission terminal.Cbg1 and cbg2 are at the band pass filter circuit 2.4G BPF_ of 2.4GHz transmit path and send the electrode of the formation capacity cell C of the balancedunbalanced circuit Tx2.4G Balun that is provided with between terminal Tx_2G_1, the TX_2G_2; Lbg1～lbg4, lbg6～lbg18 are the electrodes of the formation inductance component L of balancedunbalanced circuit Tx2.4G Balun; Cba1～cba3 is at the band pass filter circuit 5G BPF_ of 5GHz transmit path and sends the electrode of the formation capacity cell C of the balancedunbalanced circuit Tx5G Balun that is provided with between terminal TX_5G_1, the TX_5G_2 that lba1～lba6 is the electrode of the formation inductance component L of balancedunbalanced circuit Tx5G Balun.The balancedunbalanced circuit be configured to than the band pass filter circuit of transmitter side by under ply.For the miniaturization of high frequency circuit components, band pass filter circuit and balancedunbalanced circuit are by the approaching circuit of high pass filter that is disposed at receiver side.
For the filter circuit of the filter circuit that makes RX path and transmit path near configuration, bucking electrode is set between filter circuit.In the example of Figure 28, bucking electrode is the through hole electrode (by the oval encirclement of solid line) that is connected with grounding electrode.Bucking electrode also has the shielding with the filter circuit that sends balancedunbalanced circuit that terminal is connected and RX path concurrently.Through hole electrode constitutes the linearity through hole electrode row that connect dielectric layer therebetween according to the mode that is connected to form at the grounding electrode of the 3rd layer, the 21st layer and the 23rd layer.The 3rd layer grounding electrode is a band electrode, is connected with the through hole electrode that separates predetermined distance along its length.The grounding electrode of the 21st layer and the 23rd layer is the whole approximate rectangular shape of cover layer.In the example of Figure 28, also on the 5th layer, the 7th layer, the 8th layer, the 9th layer, the 12nd layer, the 14th layer, be formed with banded electrode, so that the connecting through hole electrodes series.Through like this through hole electrode being made as bucking electrode, can with near the filter circuit of the filter circuit of RX path and transmit path and the insulation when disposing rise to more than the 15dB.Bucking electrode, integrated filter circuit are being set, and in the present embodiment of common feed power supply, can obtaining height 1.5mm, volume 73.5mm 3Slim, small-sized 1T2R type double frequency-band wireless LAN module.
Other examples of each layer electric conductor pattern of the multilayer board of Figure 30 (a)～Figure 30 (e) expression formation high frequency circuit components of the present invention.In this example, multilayer board is made up of 24 layers dielectric layer, is formed with outside terminal for connecting electrode at the 24th layer the back side.Figure 31 by the expression equivalent electric circuit can know, this high frequency circuit components be with the frequency band of 2.4GHz as the single band WLAN of first communication system with front-end module (each communication system has two 2T3R types that send terminals and three reception terminals).
The equivalent electric circuit in first path that Figure 31 (a) expression is connected with first antenna terminal, the equivalent electric circuit in second path that Figure 31 (b) expression is connected with second antenna terminal, the equivalent electric circuit in the Third Road footpath that Figure 31 (c) expression is connected with the third antenna terminal.In first path; The first antenna terminal Ant1 sends terminal TX1_1, TX1_2 and the first reception terminal RX1 via switching circuit S1 and first and is connected, and switching circuit S1 sends the first antenna terminal Ant1 and first and switches terminal TX1_1, TX1_12 or first being connected of reception terminal RX1.First path is not except being provided with channel splitting circuit, and not being provided with the 5GHz transmitting-receiving path for single band, identical with Figure 28 and situation shown in Figure 29.That is, send terminal TX1_1, TX1_2 and first at first antenna terminal and first and receive the filter circuit that disposes between the terminal RX1, high-frequency amplifier circuit, amplifier circuit in low noise, balancedunbalanced circuit etc., with Figure 28 and shown in Figure 29 identical.Therefore, omission is to their explanation.In second path; The second antenna terminal Ant2 sends terminal TX2_1, TX2_2 and the second reception terminal RX2 via switching circuit S2 and second and is connected, and switching circuit S2 sends the second antenna terminal Ant2 and second and switches terminal TX2_1, TX2_2 or second being connected of reception terminal RX2.The circuit that the second antenna terminal Ant2 and second sends between terminal TX2_1, TX2_2 and the second reception terminal RX2 constitutes identical with first path.In the Third Road footpath, third antenna terminal Ant3 receives terminal RX3 via switching circuit S3 and the 3rd and is connected.Because the formation in this path is except being provided with channel splitting circuit, and not being provided with the RX path of 5GHz, identical with shown in Figure 28 and Figure 29 (b) is so omit explanation.
The power line of high-frequency amplifier circuit is connected, reaches RX path with public supply power terminal VccPA low noise amplifier is connected with public supply power VccLNA; This is identical with Figure 28 and example shown in Figure 29; Thus, can realize the miniaturization of high frequency circuit components.
With reference to Figure 30, each layer electric conductor pattern of multilayer board that formation is had the high frequency circuit components of equivalent electric circuit shown in Figure 31 describes.At the back side of multilayer board, to be arranged with the terminal electrode group of supply power, control power supply, input signal, output signal, antenna, ground connection around shape, be formed with the grounding electrode of rectangle in the inboard of terminal electrode group along each limit.If establish the back side of multilayer board have opposed first and second limit and with their quadratures the opposed the 3rd and the 4th limit; Then can a plurality of antenna terminal electrodes all be disposed along first limit; Transmitting terminal sub-electrode and receiving terminal sub-electrode are disposed along second limit, circuit controls such as supply power terminal electrode, control power supply terminal electrode are all disposed along the 3rd and the 4th limit with terminal electrode.This different circuits formation and Figure 28 and example shown in Figure 29 are identical.
In Figure 30; Clf1～clf7 representes to constitute the electrode that receives the capacity cell C of the band pass filter circuit that terminal is connected with first; L1f2a, l1f3a, l1f2b, l1f3b, l1f2c, l1f3c represent to constitute the electrode of inductance component L; C2f1～c2f7 representes to constitute the electrode that receives the capacity cell C of the band pass filter circuit that terminal is connected with second; L2f2a, l2f3a, l2f2b, l2f3b, l2f2c, l2f3c represent to constitute the electrode of inductance component L; C3f1～c3f7 representes to constitute the electrode that receives the inductance element C of the band pass filter circuit that terminal is connected with the 3rd, and l3f2a, l3f3a, l3f2b, l3f3b, l3f2c, l3f3c represent to constitute the electrode of inductance component L.
Figure 41 (a)～Figure 41 (c) representes the equivalent electric circuit of the band pass filter circuit that is connected with first～the 3rd reception terminal among Figure 31 respectively.For miniaturization; Receive band pass filter circuit that terminal is connected and receive band pass filter circuit, the band pass filter circuit that is connected with the second reception terminal that terminal is connected and the band pass filter circuit that is connected with the 3rd reception terminal respectively near configuration with first, between them, be formed with through hole electrode (among Figure 30 by the encirclement of the ellipse of dotted line) as bucking electrode with the 3rd.Through hole electrode penetrates into the 21st layer from the 9th layer, is connected with the grounding electrode that forms in these layers.In this instance, because the interval of filter circuit is bigger slightly than the example of Figure 28 and Figure 29, so the quantity of through hole electrode reduces.In addition, because the band pass filter circuit that is connected with the first reception terminal has been obtained enough intervals with the band pass filter circuit that is connected with the second reception terminal, so, through hole electrode is not set between them.Like this, through with through hole electrode as bucking electrode, can the insulation between the filter circuit in each path be brought up to more than the 15dB.Through by bucking electrode integrated filter circuit and the public present embodiment of supply power, can obtain high 1.5mm and volume 72.0mm 3Slim, small-sized 2T3R type single band wireless LAN module.
Through utilizing above-mentioned high frequency circuit components, can constitute small-sized, communicator cheaply.Such high frequency circuit components advantageous applications is in portable equipment that possesses radio communication function or PC etc.
With reference to accompanying drawing high frequency circuit components of the present invention is illustrated, but the present invention is not limited to illustrated situation certainly, can in thought range of the present invention, carries out various changes.The explanation relevant with each embodiment also can be applied to other embodiment.Certainly, the equivalent electric circuit of each high frequency circuit components shown in the drawings is an illustration, should limited interpretation the present invention.Through appropriate combination or change these equivalent electric circuits, can constitute high frequency circuit components of the present invention.

Claims (29)

1. high frequency circuit components; Have: what first and second antenna terminal, first communication system were used at least at least the first sends terminal and first and second switching circuit and plural filter circuit that receives terminal, is connected with said first antenna terminal at least
Said switching circuit is used for the path between the path between said first antenna terminal and the said first transmission terminal and said first antenna terminal and the said first reception terminal is switched,
By the said path that said switching circuit switches, be different from the path that said second antenna terminal and said second that said first communication system uses receives between the terminal,
The said first transmission terminal and said first that said first communication system is used receives terminal and can be connected with said first antenna terminal respectively,
The second reception terminal that said first communication system is used can be connected with said second antenna terminal.
2. high frequency circuit components according to claim 1 is characterized in that,
What have that the second communication system uses at least the first sends terminal and first and second receives terminal at least,
Said second communication system uses said first sends terminal and said first and receives terminal and can utilize said switching circuit to be connected with said first antenna terminal respectively, and the said second reception terminal that said second communication system uses can be connected with said second antenna terminal.
3. high frequency circuit components; Have: at least first and second antenna terminal, first communication system use first and second sends terminal and first and second receives terminal at least, first switching circuit that is connected with said first antenna terminal reaches second switch circuit and the plural filter circuit that is connected with said second antenna terminal at least
Said first antenna terminal that said first switching circuit is used for first communication system is used and said first sends said first antenna terminal that path and first communication system between the terminal use and switches with the path between the said first reception terminal,
Said second antenna terminal that said second switch circuit is used for first communication system is used and said second sends said second antenna terminal that path and first communication system between the terminal use and switches with the path between the said second reception terminal,
The said first transmission terminal and said first that said first communication system is used receives terminal and can be connected with said first antenna terminal respectively,
The said second transmission terminal and said second that said first communication system is used receives terminal and can be connected with said second antenna terminal respectively.
4. high frequency circuit components according to claim 3 is characterized in that,
Have that the second communication system uses first and second sends terminal and first and second receives terminal at least at least,
Said second communication system uses said first sends terminal and said first and receives terminal and can utilize said first switching circuit to be connected with said first antenna terminal respectively, and said second transmission terminal and the said second reception terminal that said second communication system uses can utilize said second switch circuit to be connected with said second antenna terminal respectively.
5. high frequency circuit components according to claim 3 is characterized in that,
Have the 3rd reception terminal that third antenna terminal and said first communication system are used,
Said the 3rd reception terminal that said first communication system is used can be connected with said third antenna terminal.
6. high frequency circuit components according to claim 4 is characterized in that,
Have: third antenna terminal, said first communication system use the 3rd receive that terminal and said second communication system use the 3rd receive terminal,
Said first communication system is used the said the 3rd receive that terminal and said second communication system use the said the 3rd receive terminal and can be connected with said third antenna terminal respectively.
7. high frequency circuit components according to claim 5 is characterized in that,
Have the 3rd transmission terminal that said first communication system is used,
Said the 3rd transmission terminal that said first communication system is used can be connected with said third antenna terminal.
8. high frequency circuit components according to claim 6 is characterized in that,
Have that said first communication system uses the 3rd send that terminal and said second communication system use the 3rd send terminal,
Said first communication system is used the said the 3rd send that terminal and said second communication system use the said the 3rd send terminal and can be connected with said third antenna terminal respectively.
9. according to each described high frequency circuit components in the claim 1～8, it is characterized in that,
Has the transmitting-receiving terminal that third communication system uses.
10. according to claim 1 or 3 described high frequency circuit components, it is characterized in that,
Have: common source terminal and the plural amplifier circuit in low noise that amplifies to received signal.
11. high frequency circuit components according to claim 10 is characterized in that,
Have: common source terminal and the plural high-frequency amplifier circuit that the transmission signal is amplified.
12. high frequency circuit components; Have: at least first and second antenna terminal, first communication system use at least the first send terminal and at least first and second receive that terminal, second communication system use at least the first send terminal and first and second receives terminal at least
(A) first path that is connected with said first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use first send terminal the path;
(b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal the path; (c) from said first switching circuit begun to be linked in sequence second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use said first receive terminal the path; (d) connected that said second channel splitting circuit and said second communication system use first receive terminal the path;
(B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal begun to be linked in sequence the 3rd channel splitting circuit, four-tape bandpass filter circuit and said first communication system use said second receive terminal the path; (b) connected that said the 3rd channel splitting circuit and said second communication system use said second receive terminal the path.
13. high frequency circuit components; Have: at least first and second antenna terminal, first communication system use at least first and second send terminal and at least first and second receive that terminal, second communication system use first and second sends terminal and first and second receives terminal at least at least
(A) first path that is connected with first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal the path;
(b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal the path; (c) from said first switching circuit begun to be linked in sequence second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use said first receive terminal the path; (d) connected that said second channel splitting circuit and said second communication system use said first receive terminal the path;
(B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal begun to be linked in sequence second switch circuit, the 3rd channel splitting circuit, the 3rd high-frequency amplifier circuit, four-tape bandpass filter circuit and said first communication system use said second send terminal the path; (b) from said the 3rd channel splitting circuit begun to be linked in sequence the 4th high-frequency amplifier circuit, the 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit begun to be linked in sequence the 4th channel splitting circuit, the 6th band pass filter circuit and said first communication system use said second receive terminal the path; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path.
14. high frequency circuit components; Have: first and second transmission terminal and at least the first～3 at least that first and second transmission terminal and at least the first at least～3rd reception terminal, the second communication system that at least the first～third antenna terminal, first communication system are used uses receives terminal
(A) first path that is connected with first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal the path; (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal the path; (c) from said first switching circuit begun to be linked in sequence second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use said first receive terminal the path; (d) connected that said second channel splitting circuit and said second communication system use first receive terminal the path;
(B) second path that is connected with second antenna terminal has: (a) from said second antenna terminal begun to be linked in sequence second switch circuit, the 3rd channel splitting circuit, the 3rd high-frequency amplifier circuit, four-tape bandpass filter circuit and said first communication system use said second send terminal the path; (b) from said the 3rd channel splitting circuit begun to be linked in sequence the 4th high-frequency amplifier circuit, the 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit begun to be linked in sequence the 4th channel splitting circuit, the 6th band pass filter circuit and said first communication system use said second receive terminal the path; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path;
(C) Third Road that is connected with the third antenna terminal directly has: (a) from the third antenna terminal begun to be linked in sequence the 5th channel splitting circuit, the 7th band pass filter circuit and said first communication system use the said the 3rd receive terminal the path; (b) connected that said the 5th channel splitting circuit and said second communication system use the said the 3rd receive terminal the path.
15. high frequency circuit components; Have: at least the first～the 3rd transmission terminal and at least the first～3 that at least the first～the 3rd transmission terminal and at least the first that at least the first～third antenna terminal, first communication system are used～3rd reception terminal, second communication system use receives terminal
(A) path that is connected with first antenna terminal has: (a) from said first antenna terminal begun to be linked in sequence first switching circuit, first channel splitting circuit, first high-frequency amplifier circuit, first band pass filter circuit and said first communication system use said first send terminal the path; (b) from said first channel splitting circuit begun to be linked in sequence second high-frequency amplifier circuit, second band pass filter circuit, and said second communication system use said first send terminal the path; (c) from said first switching circuit begun to be linked in sequence second channel splitting circuit, the 3rd band pass filter circuit and said first communication system use said first receive terminal the path; (d) connected that said second channel splitting circuit and said second communication system use first receive terminal the path;
(B) path that is connected with second antenna terminal has: (a) from said second antenna terminal begun to be linked in sequence second switch circuit, the 3rd channel splitting circuit, the 3rd high-frequency amplifier circuit, four-tape bandpass filter circuit and said first communication system use said second send terminal the path; (b) from said the 3rd channel splitting circuit begun to be linked in sequence the 4th high-frequency amplifier circuit, the 5th band pass filter circuit and said second communication system use said second send terminal the path; (c) from said second switch circuit begun to be linked in sequence the 4th channel splitting circuit, the 6th band pass filter circuit and said first communication system use said second receive terminal the path; (d) connected that said the 4th channel splitting circuit and said second communication system use said second receive terminal the path;
(C) path that is connected with the third antenna terminal has: (a) from said third antenna terminal begun to be linked in sequence the 3rd switching circuit, the 5th channel splitting circuit, the 5th high-frequency amplifier circuit, the 7th band pass filter circuit and said first communication system use the said the 3rd send terminal the path; (b) from said the 5th channel splitting circuit begun to be linked in sequence the 6th high-frequency amplifier circuit, the 8th band pass filter circuit, and said second communication system use the said the 3rd send terminal the path; (c) from said the 3rd switching circuit begun to be linked in sequence the 6th channel splitting circuit, the 9th band pass filter circuit and said first communication system use the said the 3rd receive terminal the path; (d) from said the 6th channel splitting circuit begun to connect said second communication system uses the said the 3rd receive terminal the path.
16. according to each described high frequency circuit components in the claim 12～15, it is characterized in that,
Between said switching circuit and said channel splitting circuit, be provided with and send the detecting circuit that signal is used.
17. according to each described high frequency circuit components in the claim 12～15, it is characterized in that,
Between each reception terminal and each antenna terminal, be provided with amplifier circuit in low noise.
18. high frequency circuit components according to claim 17 is characterized in that,
The total respectively power supply terminal of said amplifier circuit in low noise, the total respectively power supply terminal of said high-frequency amplifier circuit.
19. according to each described high frequency circuit components in the claim 1,3,12～15, it is characterized in that,
Be the multilayer board of the one that constitutes by a plurality of ceramic dielectric layers that are formed with the electric conductor pattern, have: constitute the multilayer board of inductance element and capacity cell and be equipped at least one semiconductor element on the said multilayer board by said electric conductor pattern.
20. according to claim 1 or 3 described high frequency circuit components, it is characterized in that,
Be the multilayer board of the one that constitutes by a plurality of ceramic dielectric layers that are formed with the electric conductor pattern, have: constitute the multilayer board of inductance element and capacity cell and be equipped at least one semiconductor element on the said multilayer board by said electric conductor pattern,
Said first and second that the part of said plural filter circuit and said first communication system are used receives terminal and is connected, with said plural filter circuit that said first and second reception terminal is connected between be provided with bucking electrode.
21. according to claim 1 or 3 described high frequency circuit components, it is characterized in that,
Be the multilayer board of the one that constitutes by a plurality of ceramic dielectric layers that are formed with the electric conductor pattern, have: constitute the multilayer board of inductance element and capacity cell and be equipped at least one semiconductor element on the said multilayer board by said electric conductor pattern,
The part of said plural filter circuit is connected with the said first transmission terminal and said first and second reception terminal that said first communication system is used respectively; Send in the said plural filter circuit that terminal connected one and said first and second said first and receive between at least one in said plural filter circuit that terminal connected, be provided with bucking electrode.
22. high frequency circuit components according to claim 19 is characterized in that,
Be formed with at least two antenna terminal electrodes, at least one transmitting terminal sub-electrode, at least two receiving terminal sub-electrodes, at least one grounding electrode and the controls of at least one circuit at least one face of said multilayer board and use terminal electrode; Said antenna terminal electrode is along first limit configuration of said multilayer board, and said transmitting terminal sub-electrode is along disposing with opposed second limit, said first limit.
23. high frequency circuit components according to claim 22 is characterized in that,
The receiving terminal sub-electrode of the same communication system in the said receiving terminal sub-electrode is away from configuration.
24. according to claim 22 or 23 described high frequency circuit components, it is characterized in that,
Said receiving terminal sub-electrode disposes along said second limit.
25. according to claim 22 or 23 described high frequency circuit components, it is characterized in that,
Said circuit is controlled with terminal electrode along the opposed limit configuration in the both sides on said first and second limit.
26. high frequency circuit components according to claim 19 is characterized in that,
On the one side of said multilayer board, be formed with antenna terminal electrode, a plurality of transmitting terminal sub-electrode, a plurality of receiving terminal sub-electrode, a plurality of grounding electrode and the control of a plurality of circuit and use terminal electrode; Said antenna terminal electrode, said transmitting terminal sub-electrode and said receiving terminal sub-electrode are along the periphery configuration of said one side, and said circuit control is configured in its inboard with at least one of terminal electrode.
27. high frequency circuit components according to claim 26 is characterized in that,
At least one is supplied with the periphery configuration of power supply terminal along said one side.
28. according to claim 26 or 27 described high frequency circuit components, it is characterized in that,
Said antenna terminal electrode, said transmitting terminal sub-electrode, and said receiving terminal sub-electrode between terminal electrode except balance input/output terminal sub-electrode, dispose the control of said grounding electrode or said circuit and use terminal electrode.
29. a communicator possesses each described high frequency circuit components in the claim 1～28.
CN2007800091117A 2006-01-17 2007-01-17 High frequency circuit component and communication apparatus using such high frequency circuit component Active CN101401317B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2006008343 2006-01-17
JP008343/2006 2006-01-17
JP2006202392 2006-07-25
JP202392/2006 2006-07-25
PCT/JP2007/050607 WO2007083668A1 (en) 2006-01-17 2007-01-17 High frequency circuit component and communication apparatus using such high frequency circuit component

Publications (2)

Publication Number Publication Date
CN101401317A CN101401317A (en) 2009-04-01
CN101401317B true CN101401317B (en) 2012-09-26

Family

ID=38287619

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800091117A Active CN101401317B (en) 2006-01-17 2007-01-17 High frequency circuit component and communication apparatus using such high frequency circuit component

Country Status (6)

Country Link
US (1) US8130787B2 (en)
EP (1) EP1976133B1 (en)
JP (3) JP5245413B2 (en)
CN (1) CN101401317B (en)
TW (1) TWI452851B (en)
WO (1) WO2007083668A1 (en)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141929A (en) * 2007-11-16 2009-06-25 Tdk Corp High frequency electronic component
JPWO2009157357A1 (en) * 2008-06-25 2011-12-15 日立金属株式会社 High frequency circuit, high frequency component and communication device
JP5472672B2 (en) * 2008-10-09 2014-04-16 日立金属株式会社 High frequency circuit component and communication apparatus using the same
WO2010097650A1 (en) * 2009-02-27 2010-09-02 Nokia Siemens Networks Oy Improved mimo communication system
AU2010225399B9 (en) * 2009-03-18 2014-11-06 Netgear, Inc. Multiple antenna system for wireless communication
US8219157B2 (en) * 2009-03-26 2012-07-10 Apple Inc. Electronic device with shared multiband antenna and antenna diversity circuitry
US8208867B2 (en) * 2009-04-09 2012-06-26 Apple Inc. Shared multiband antennas and antenna diversity circuitry for electronic devices
JP2011015242A (en) * 2009-07-02 2011-01-20 Panasonic Corp Radio frequency power amplifier
DE102010012603B4 (en) * 2010-03-24 2019-09-12 Snaptrack, Inc. Front end module and method for operation in different circuit environments
EP2628249B1 (en) * 2010-10-15 2017-03-15 NXP USA, Inc. Integrated circuit device, wireless communication unit and method of manufacture therefor
KR101806540B1 (en) * 2010-12-20 2017-12-07 엘지이노텍 주식회사 Wireless signal control device and method in wireless communication system supporting multiple input multiple output
FR2971655A1 (en) * 2011-02-10 2012-08-17 Thomson Licensing BI-BAND TERMINAL WITH COMPETING ACCESS OPERATED IN TWO ADJACENT TAPES
CN103416001B (en) * 2011-03-02 2015-05-20 株式会社村田制作所 High frequency module
CN102299684B (en) * 2011-05-24 2013-07-24 北京恒际通科技发展有限公司 Signal frequency conversion transmitter
JP2013031135A (en) * 2011-07-29 2013-02-07 Sharp Corp Radio communication equipment
US8897407B2 (en) * 2011-12-04 2014-11-25 Hemisphere Gnss Inc. RF (including GNSS) signal interference mitigation system and method
US8798554B2 (en) * 2012-02-08 2014-08-05 Apple Inc. Tunable antenna system with multiple feeds
US8824976B2 (en) * 2012-04-11 2014-09-02 Qualcomm Incorporated Devices for switching an antenna
WO2013168689A1 (en) 2012-05-09 2013-11-14 株式会社村田製作所 Switch module
JP5609918B2 (en) * 2012-05-09 2014-10-22 株式会社村田製作所 Switch module
JP5594318B2 (en) 2012-05-24 2014-09-24 株式会社村田製作所 Switch module
TWI445332B (en) * 2012-06-18 2014-07-11 Hon Hai Prec Ind Co Ltd Multiple input multiple output transceiver
US9350392B2 (en) 2012-12-12 2016-05-24 Qualcomm Incorporated RFIC configuration for reduced antenna trace loss
KR20140145881A (en) * 2013-06-14 2014-12-24 삼성전기주식회사 Apparatus and mobile communication terminal for sharing wireless lan antenna
CN106464291B (en) * 2014-06-26 2019-12-27 株式会社村田制作所 Circuit board and circuit module
US10312960B2 (en) * 2014-08-12 2019-06-04 Qorvo Us, Inc. Switchable RF transmit/receive multiplexer
KR101625444B1 (en) * 2015-03-05 2016-06-13 (주)와이솔 Filter module
GB2542625B (en) * 2015-09-28 2021-06-09 Tcl Communication Ltd Transceiver devices
DE102016102073A1 (en) * 2016-02-05 2017-08-10 Snaptrack, Inc. Front-end module for carrier aggregation operation
US10171112B2 (en) * 2016-03-24 2019-01-01 Qualcomm Incorporated RF multiplexer with integrated directional couplers
TWI603596B (en) * 2016-06-14 2017-10-21 仁寶電腦工業股份有限公司 Mobile device
JP2018064266A (en) * 2016-10-07 2018-04-19 株式会社村田製作所 High frequency filter and high frequency module
US10491181B2 (en) * 2016-10-07 2019-11-26 Murata Manufacturing Co., Ltd. High-frequency filter and high-frequency module
WO2018101112A1 (en) * 2016-11-30 2018-06-07 株式会社村田製作所 Wiring board, coupler module, and communication device
WO2018168500A1 (en) * 2017-03-15 2018-09-20 株式会社村田製作所 High frequency module and communication device
CN107332573B (en) * 2017-07-25 2021-04-13 Oppo广东移动通信有限公司 Radio frequency circuit, antenna device and electronic equipment
WO2019065419A1 (en) 2017-09-29 2019-04-04 株式会社村田製作所 High-frequency module and communication device
JP2019193115A (en) * 2018-04-25 2019-10-31 株式会社村田製作所 High-frequency amplifier circuit, high-frequency front end circuit, and communication apparatus
JP6976216B2 (en) * 2018-05-14 2021-12-08 三菱電機株式会社 Send / receive module
KR102438877B1 (en) 2018-06-20 2022-09-01 가부시키가이샤 무라타 세이사쿠쇼 High-frequency modules and communication devices
KR102420284B1 (en) * 2018-06-20 2022-07-14 가부시키가이샤 무라타 세이사쿠쇼 High-frequency modules and communication devices
WO2020179540A1 (en) * 2019-03-01 2020-09-10 株式会社村田製作所 High frequency module and communication device
JP7222276B2 (en) 2019-03-13 2023-02-15 住友電工デバイス・イノベーション株式会社 microwave integrated circuit
JP2021048567A (en) * 2019-09-20 2021-03-25 株式会社村田製作所 High frequency module and communication device
CN110768634A (en) * 2019-09-23 2020-02-07 广州慧智微电子有限公司 Radio frequency front end architecture
US11994312B2 (en) 2019-10-31 2024-05-28 Mitsubishi Electric Corporation Air-conditioning apparatus
JP2021087035A (en) * 2019-11-25 2021-06-03 株式会社村田製作所 High-frequency signal transmission and reception circuit
JP2021100213A (en) * 2019-12-23 2021-07-01 株式会社村田製作所 High frequency module and communication device
JP2021145282A (en) * 2020-03-13 2021-09-24 株式会社村田製作所 High frequency module and communication device
JP2021158556A (en) * 2020-03-27 2021-10-07 株式会社村田製作所 High-frequency module and communication device
JP2021158554A (en) * 2020-03-27 2021-10-07 株式会社村田製作所 High-frequency module and communication device
WO2023027146A1 (en) * 2021-08-26 2023-03-02 株式会社村田製作所 Power amplification circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677893A (en) * 2004-04-01 2005-10-05 株式会社日立制作所 Portable radio apparatus
JP2006014102A (en) * 2004-06-29 2006-01-12 Hitachi Metals Ltd High-frequency laminated module component and dual band communication device using the same
WO2006003959A1 (en) * 2004-06-30 2006-01-12 Hitachi Metals, Ltd. High frequency circuit, high frequency component, and multi-band communication apparatus

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535748A (en) * 1967-07-25 1970-10-27 Mario Lely Wearing apparel safety retaining means
JPH0766775A (en) * 1993-08-30 1995-03-10 Kokusai Electric Co Ltd Repeating amplifier device
JPH07202739A (en) * 1994-01-05 1995-08-04 Fujitsu Ltd Branching filter
JP2907010B2 (en) * 1994-08-03 1999-06-21 松下電器産業株式会社 Dielectric filter
JPH09294100A (en) * 1996-04-25 1997-11-11 Mitsubishi Electric Corp Radio communication equipment and radio communication method
JPH09298483A (en) * 1996-04-30 1997-11-18 Sanyo Electric Co Ltd Microwave integrated circuit
JPH1022865A (en) * 1996-07-08 1998-01-23 Matsushita Electric Ind Co Ltd Transmission/reception antenna switching device
JPH10154947A (en) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd Antenna switch multicoupler
JPH10173578A (en) * 1996-12-13 1998-06-26 Toshiba Corp Antenna matching method and circuit
US6298221B1 (en) * 1998-04-01 2001-10-02 Denso Corporation Adaptive receiver linearity techniques for a radio transceiver
GB9811380D0 (en) * 1998-05-27 1998-07-22 Nokia Mobile Phones Ltd A transciever for wireless communication
JP2000031651A (en) * 1998-07-14 2000-01-28 Sony Corp Multilayer circuit board
JP3189794B2 (en) 1998-07-27 2001-07-16 日本電気株式会社 Wireless transmitting / receiving apparatus and transmission spurious prevention method
JP2000134002A (en) * 1998-10-26 2000-05-12 Ngk Spark Plug Co Ltd Dielectric filter
WO2000055967A1 (en) * 1999-03-15 2000-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device and communication device
JP2002171194A (en) * 2000-11-30 2002-06-14 Matsushita Electric Ind Co Ltd Radio equipment, base radio station equipped therewith, portable information terminal and radio communication system incorpolating them
JP2002208874A (en) * 2001-01-11 2002-07-26 Matsushita Electric Ind Co Ltd High frequency circuit
JP4746770B2 (en) 2001-06-19 2011-08-10 ルネサスエレクトロニクス株式会社 Semiconductor device
JP3874241B2 (en) * 2001-07-27 2007-01-31 株式会社ルネサステクノロジ Electronic component and design method
JP2003229786A (en) * 2002-01-31 2003-08-15 Denso Corp Low-temperature, low-noise front end
JP2003273624A (en) * 2002-03-19 2003-09-26 Matsushita Electric Ind Co Ltd Cordless telephone handset, cordless telephone base unit, and cordless telephone system
JP3922099B2 (en) * 2002-05-27 2007-05-30 ソニー株式会社 Wireless communication device
JP3909833B2 (en) * 2002-05-31 2007-04-25 松下電器産業株式会社 Antenna switching circuit and communication device
JP3904151B2 (en) * 2002-10-01 2007-04-11 日立金属株式会社 Composite laminated module and communication device using the same
JP2004166258A (en) * 2002-10-25 2004-06-10 Hitachi Metals Ltd Balanced/unbalanced multiband filter module
JP4126651B2 (en) * 2002-10-25 2008-07-30 日立金属株式会社 High frequency switch module, composite laminated module, and communication device using them
JP4101637B2 (en) * 2002-12-24 2008-06-18 シャープ株式会社 Mobile phone terminal
JP3838237B2 (en) * 2003-04-30 2006-10-25 ソニー株式会社 Wireless communication system, transmitting apparatus and receiving apparatus
JP4120935B2 (en) * 2003-08-08 2008-07-16 日立金属株式会社 High-frequency module and communication device using the same
JP2005064779A (en) * 2003-08-11 2005-03-10 Hitachi Metals Ltd High pass filter and multiband antenna switching circuit using it, multiband antenna switch lamination module, and communication system
JP2005079634A (en) * 2003-08-28 2005-03-24 Seiko Epson Corp Wireless communication apparatus
JP2005123785A (en) * 2003-10-15 2005-05-12 Sharp Corp Radio communication apparatus
US7155252B2 (en) 2003-10-17 2006-12-26 Nokia Corporation Mimo and diversity front-end arrangements for multiband multimode communication engines
JP2005269305A (en) * 2004-03-19 2005-09-29 Sharp Corp High frequency front end circuit and high frequency communication apparatus
JP2005277579A (en) * 2004-03-23 2005-10-06 Kyocera Corp High frequency module and communication apparatus employing the same
US7643848B2 (en) * 2004-04-13 2010-01-05 Qualcomm, Incorporated Multi-antenna transceiver system
JP4570900B2 (en) 2004-04-27 2010-10-27 株式会社エヌ・ティ・ティ・ドコモ Receiver, transmitter, radio communication system, and reception method
JP4399786B2 (en) 2004-05-20 2010-01-20 日立金属株式会社 Demultiplexing / filter composite circuit, high-frequency circuit, high-frequency circuit component, and multiband communication device using these
JP4246114B2 (en) 2004-05-26 2009-04-02 日本電信電話株式会社 MIMO radio signal transmission system and method
JP2005354407A (en) * 2004-06-10 2005-12-22 Hitachi Metals Ltd High frequency circuit, high frequency component and multiband communication apparatus using the same
JP5137167B2 (en) * 2004-06-25 2013-02-06 日立金属株式会社 BANDPASS FILTER, HIGH FREQUENCY CIRCUIT, HIGH FREQUENCY CIRCUIT COMPONENT, AND MULTIBAND COMMUNICATION DEVICE USING THEM
JP4774791B2 (en) 2005-04-06 2011-09-14 日立金属株式会社 High frequency module
JP4304674B2 (en) * 2006-02-06 2009-07-29 日立金属株式会社 High-frequency module and communication device using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1677893A (en) * 2004-04-01 2005-10-05 株式会社日立制作所 Portable radio apparatus
JP2006014102A (en) * 2004-06-29 2006-01-12 Hitachi Metals Ltd High-frequency laminated module component and dual band communication device using the same
WO2006003959A1 (en) * 2004-06-30 2006-01-12 Hitachi Metals, Ltd. High frequency circuit, high frequency component, and multi-band communication apparatus

Also Published As

Publication number Publication date
EP1976133A1 (en) 2008-10-01
CN101401317A (en) 2009-04-01
EP1976133B1 (en) 2017-08-16
TW200737757A (en) 2007-10-01
JP2009290896A (en) 2009-12-10
JP5245413B2 (en) 2013-07-24
WO2007083668B1 (en) 2007-11-08
US20100157860A1 (en) 2010-06-24
WO2007083668A1 (en) 2007-07-26
EP1976133A4 (en) 2012-10-03
JP5065350B2 (en) 2012-10-31
US8130787B2 (en) 2012-03-06
JPWO2007083668A1 (en) 2009-06-11
JP2009290897A (en) 2009-12-10
TWI452851B (en) 2014-09-11
JP4991807B2 (en) 2012-08-01

Similar Documents

Publication Publication Date Title
CN101401317B (en) High frequency circuit component and communication apparatus using such high frequency circuit component
JP4618461B2 (en) High frequency circuit, high frequency component and communication device
CN1977467B (en) High frequency component and multi-band communication apparatus
TWI472170B (en) High-frequency circuit, high-frequency device, and communications apparatus
JP4716047B2 (en) Multiband high frequency circuit, multiband high frequency circuit component, and multiband communication apparatus using the same
KR101065344B1 (en) Multi-band high-frequency circuit, multi-band high-frequency circuit part, and multi-band communication device using the same
US8620244B2 (en) Electrical component with a front-end circuit
JP2007295327A (en) High frequency circuit, high frequency component, and communication apparatus
WO2008075691A1 (en) High frequency circuit, high frequency component and communication device
JP4288529B2 (en) High frequency components and multiband communication devices
JP2006304081A (en) High frequency circuit, high frequency circuit component and communication equipment using it
JP2005354407A (en) High frequency circuit, high frequency component and multiband communication apparatus using the same
JP2009027319A (en) High-frequency circuit, high-frequency component, and communication device
JP2009159411A (en) High frequency circuit, high frequency component and communication equipment
JP2010093622A (en) High frequency circuit component and communication device using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20211018

Address after: Kyoto Japan

Patentee after: Murata Manufacturing Co.,Ltd.

Address before: Tokyo

Patentee before: HITACHI METALS, Ltd.

TR01 Transfer of patent right