CN101331592B - Laser irradiation apparatus, laser irradiation method and manufacturing method of semiconductor device - Google Patents
Laser irradiation apparatus, laser irradiation method and manufacturing method of semiconductor device Download PDFInfo
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- CN101331592B CN101331592B CN200680047387XA CN200680047387A CN101331592B CN 101331592 B CN101331592 B CN 101331592B CN 200680047387X A CN200680047387X A CN 200680047387XA CN 200680047387 A CN200680047387 A CN 200680047387A CN 101331592 B CN101331592 B CN 101331592B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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Abstract
To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-theta lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with theincidence angle of a laser beam, is used. The slit is disposed between the f-theta lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface bya projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.
Description
Technical field
The present invention relates to laser irradiating device (a kind of equipment: comprise laser oscillator and be used for to guide to the optical system of irradiating object from the laser beam of laser oscillator output) and be used for equably and the laser irradiating method that carries out laser radiation effectively semi-conducting material etc.And, the present invention relates to comprise the manufacture method of the semiconductor device of above-mentioned laser irradiation step.
Background technology
In the manufacturing of semiconductor device, laser irradiating method often is used.A reason is, compares with the solid-phase crystallization method of using radiation heating or conduction heating, and the processing time can reduce more significantly in laser irradiating method.Another reason is that the substrate of easy temperature distortion for example glass substrate can not be subjected to cause thermal damage in laser irradiating method.
In order to carry out laser radiation, irradiating object need be used from laser oscillator emitted laser bundle and scan.As the scan method of laser beam, the optical system of a kind of use galvanometer mirror (galvanometer mirror) and f-θ lens is arranged.Because galvanometer mirror has variable inclination angle, so the laser beam irradiation of the enough tested flowmeter mirror reflects of the energy of the optional position on the irradiating object.This makes it possible to carry out translation (transition) and irradiating laser on the whole surface at irradiating object by scan and be used in the automatics that provides on the stand (stage) at directions X with galvanometer mirror in the Y direction.And, when two galvanometer mirrors were set, one in them scanned at directions X, and another scans in the Y direction, (for example, list of references 1: Japanese Laid-Open Patent Application No.2003-86507) for the enough laser beam irradiations of optional position energy on the irradiating object.
Summary of the invention
By using above-mentioned laser irradiating device with beam spot (beam spot) scanning irradiating surface, can be used for the laser radiation of semi-conducting material etc.Example as this step, a kind of method will be described, wherein, also scan at minor axis direction by the beam spot that CW (continuous wave) laser beam is formed wire with this beam spot, carry out laser radiation, described CW laser beam is the second harmonic with 532nm wavelength and 10W power, and the beam spot of described wire has the length of about 300 μ m and has the length of about 10 μ m at minor axis direction at major axes orientation.Here the beam spot that is noted that wire is meant have high aspect ratio rectangle or the oval beam spot of (aspectratio).In addition, the reason in the scanning of minor axis direction execution beam spot is that described method is the scan method of full blast.In the part with beam spot scanning, the zone that crystal grain in the semiconductor film (grain) becomes bigger is formed.When the size of crystal grain becomes big, use the decreased number and the mobility of the granule boundary in the channel region of the film formed TFT of this semiconductor to become higher, thereby can develop more complicated apparatus (below, in this manual, the crystal with such bulky grain size is known as the bulky grain crystal).At this moment, the width in the zone that comprises the bulky grain crystal that obtains by single pass approximately is 200 μ m.Therefore, in order to make the whole surface crystallization of semiconductor film by laser radiation, must carry out laser radiation by this way: the width that is offset the bulky grain crystalline region of the single pass acquisition of passing through beam spot with the position of laser beam flying at the major axes orientation of beam spot.
Figure 16 demonstration is used for irradiation track and the energy density distribution in the A-A ' cross section of beam spot 1,001 1002 at the beam spot 1001 of the laser radiation of semiconductor film.Usually, from the TEM that has of laser oscillator emission
00The sectional tool of the laser beam of mould (single transverse mode) is just like the Gaussian Energy Distribution shown in the Reference numeral among Figure 16 1002, and do not have uniform Energy distribution.
The energy density of the middle body of beam spot is set to threshold value (Y) height that specific energy accesses the bulky grain crystal.At this moment, the energy density at the edge of beam spot is higher and lower than threshold value (Y) than the threshold value (X) that forms crystalline region.Therefore, when with such laser beam irradiation semiconductor film, the some parts of fusing is not retained in the zone 1004 with the edge illumination of beam spot fully.In zone 1004, the bulky grain crystal of formation and have only the relatively little crystal grain of particle size (below be called crystallite) to be formed in the zone 1003 of the middle body irradiation of beam spot not.
The semiconductor element that forms in the zone that forms crystallite by this way, promptly with the zone 1004 of the edge illumination of beam spot can not be realized high-performance.For fear of this point, must in the zone that forms the bulky grain crystal, the zone 1003 promptly shone, form semiconductor element with the middle body of beam spot.In this case, clearly, layout is restricted.Therefore, need to reduce the ratio of zone in using the whole zone of laser beam irradiation that forms crystallite.
In order to eliminate the crystallite zone, a kind of method can be considered, and wherein, slit (slit) is set in the light path of laser beam, and two edges with low-energy wire beam spot are eliminated.In other words, the proper light beam that has the energy density distribution of Figure 17 A shape after the laser beam emission is become the light beam with energy density distribution shown in the solid line among Figure 17 B by passing slit.
Here, Figure 18 A shows an example, and wherein, slit 1103 is set in the light path of optical system, and described optical system is used galvanometer mirror 1101 and the f-θ lens 1102 as deflector.In the optical system of Figure 18 A, slit 1103 is set at before the galvanometer mirror 1101.Slit 1103 is set in the light path 1005 of laser beam usually with interception (intercept) beam edge.Figure 18 B shows the cross section 1105 and the relation of the position between the slit 1103 of laser beam.Having passed the laser beam of slit opening part is gone forward side by side into the optics system by the galvanometer mirror deflection.Then, by changing the inclination angle of galvanometer mirror, can enough laser beam flying irradiating surfaces.Here, the light path shown in the figure 1005 is the light paths that enter the laser beam of f-θ lens from vertical direction.On the other hand, light path 1006 is the light paths that enter f-θ lens from incline direction.These light paths relatively, light path 1006 have the optical path length longer than light path 1005, because light path 1006 enters irradiating surface with therebetween an angle.That is, the optical path length of laser beam changes according to the inclination angle of galvanometer mirror.
Provide in optical system under the situation of slit, the diffraction effect for fear of laser beam is caused by slit must have conjugate relation by providing projecting lens to make between slit opening part and the irradiating surface.The laser beam that has passed the slit opening part is projected on the irradiating surface.As mentioned above, under the sort of situation, in the optical system of Figure 18 A, the optical path length of laser beam changes according to the inclination angle of galvanometer mirror; Correspondingly, can not clearly determine distance between slit, projecting lens and the irradiating surface.Therefore, be difficult to make between slit and the irradiating surface and in the gamut of irradiation area, have conjugate relation.In addition, under near situation about slit being arranged at the substrate, also be difficult to eliminate fully the diffraction effect that slit causes.Therefore, coming under the situation of processing semiconductor film, be difficult to eliminate the zone that forms crystallite by the optical system of using galvanometer mirror and f-θ lens.
Under such situation, the objective of the invention is to address the above problem and a kind of laser irradiating device and laser irradiating method be provided, wherein, when with using when carrying out laser beam irradiation such as the optical system of the deflector of galvanometer mirror and f-θ lens, can come advantageously semiconductor film to be carried out laser radiation by reducing with the ratio that forms the zone of crystallite in the whole zone of laser beam irradiation.And another object of the present invention provides a kind of semiconductor manufacturing facility that uses above-mentioned laser irradiating device or laser irradiating method.
A feature of the structure of laser irradiating device of the present invention is to comprise: laser oscillator; Deflector, it also passes through to change the inclination angle laser beam flying irradiating surface of this deflector surface from laser oscillator emitted laser bundle in deflector surface deflection; Imaging optical system, its gathering (condense) deflector deflects into the laser beam of irradiating surface; Slit, it is provided between imaging optical system and the irradiating surface and the edge of intercepting laser bundle; And projecting lens, its image projection that will form at the slit place in the path of laser beam process is to irradiating surface.
A feature of the structure of laser irradiating device of the present invention is to comprise: laser oscillator; Deflector, it also passes through to change the inclination angle laser beam flying irradiating surface of deflector surface from laser oscillator emitted laser bundle in deflector surface deflection; Optical system, it handles laser beam to form the beam spot of wire on irradiating surface; Imaging optical system, it assembles the laser beam that deflector deflects into irradiating surface; Slit, it is provided between imaging optical system and the irradiating surface and the edge of intercepting laser bundle; And projecting lens, its image projection that will form at the slit place in the path of laser beam process is to irradiating surface.
In the present invention, cw lasing device or pulsed laser oscillator can be used as laser oscillator.A feature of the structure of above-mentioned laser irradiating device is: the cw lasing device is Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite (alexandrite) laser, Ti: one or more in sapphire laser, He-Cd laser device, GaN laser, GaAs laser and the InAs laser.
A feature of the structure of above-mentioned laser irradiating device is: pulsed laser oscillator is Ar laser, Kr laser, quasi-molecule (excimer) laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: one or more in sapphire laser, GaN laser, GaAs laser, InAs laser, copper steam (vapor) laser and the gold vapor laser.
In the structure of above-mentioned laser irradiating device, laser beam changes high order harmonic component into by nonlinear optical device with being supposed to.For example, known YAG laser is that emission wavelength is the laser of the laser beam of 1064nm as first-harmonic.This laser beam has extremely low absorption coefficient for silicon fiml, and for this state, is difficult to technically with the crystallization of laser radiation execution as a kind of amorphous silicon film of semiconductor film.Yet, utilizing nonlinear optical device, this laser beam can be changed into short wavelength laser, and exists second harmonic (532nm), triple-frequency harmonics (355nm), four-time harmonic (266nm) and quintuple harmonics (213nm) as high order harmonic component.Because these high order harmonic components have high absorption coefficient to amorphous silicon film, so they can be used to make the amorphous silicon film crystallization.Laser medium with laser oscillator of high order harmonic component has been doped Nd, Yb or Cr etc. usually, and by the exciting of these elements, laser generation takes place.
A feature of the structure of above-mentioned laser irradiating device is: deflector is one or more in galvanometer mirror, polygon mirror, acousto-optic deflection device (AOD), electro-optic deflector (EOD), resonance scanner, holography scanner and the conical scanner.
In the structure of above-mentioned laser irradiating device, imaging optical system is f-θ lens or heart f-θ lens far away.Heart f-θ lens far away are the f-θ lens with image space heart characteristic far away.When using heart f-θ lens far away, the incidence angle from heart f-θ lens far away to the laser beam of irradiating surface can be fixed.
A feature of the structure of above-mentioned laser irradiating device is: projecting lens is projection face lens.
A feature of the structure of laser irradiating method of the present invention is to comprise step: with the deflector at inclination angle that comprises deflector surface and can change deflector surface from laser oscillator emitted laser bundle; Make the laser beam that is deflected pass imaging optical system; With the edge that is arranged on the slit intercepting laser bundle between imaging optical system and the irradiating surface; The image projection that will form at the slit place in the path of laser beam process with projecting lens arrives irradiating surface; And with the beam spot scanning irradiating surface that forms.
A feature of the structure of laser irradiating method of the present invention is to comprise step: use the optics system handles from laser oscillator emitted laser bundle, to form the beam spot of wire on irradiating surface; With comprising deflector surface and can changing the deflector laser beam at the inclination angle of deflector surface; Make the laser beam that is deflected pass imaging optical system; With the edge that is arranged on the slit intercepting laser bundle between imaging optical system and the irradiating surface; The image projection that will form at the slit place in the path of laser beam process with projecting lens is to irradiating surface; And with the beam spot scanning irradiating surface that forms.
In the present invention, cw lasing device or pulsed laser oscillator can be used as laser oscillator.A feature of the structure of above-mentioned laser irradiating method is: described cw lasing device is Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite laser, Ti: one or more in sapphire laser, He-Cd laser device, GaN laser, GaAs laser and the InAs laser.
A feature of the structure of above-mentioned laser irradiating method is: pulsed laser oscillator is Ar laser, Kr laser, excimer laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: one or more in sapphire laser, GaN laser, GaAs laser, InAs laser, copper vapor laser and the gold vapor laser.
In the structure of above-mentioned laser irradiating method, laser beam changes high order harmonic component into by nonlinear optical device with being supposed to.Laser medium with laser oscillator of high order harmonic component has been doped Nd, Yb or Cr etc. usually, and by the exciting of these elements, laser generation takes place.
A feature of the structure of above-mentioned laser irradiating method is: deflector is one or more in galvanometer mirror, polygon mirror, acousto-optic deflection device (AOD), electro-optic deflector (EOD), resonance scanner, holography scanner and the conical scanner.
A feature of the structure of above-mentioned laser irradiating method is: imaging optical system is f-θ lens or heart f-θ lens far away.
A feature of the structure of above-mentioned laser irradiating method is: projecting lens is projection face lens.
A feature of the structure of the manufacture method of semiconductor device of the present invention is to comprise step: form semiconductor film on substrate; On semiconductor film, form beam spot with laser irradiating method of the present invention; And with beam spot scanning semiconductor film so that whole semiconductor film is carried out laser radiation.
Laser irradiating method in this specification refers to: be used for making by ion injection etc. be formed on the affected area of semiconductor substrate or semiconductor film or non-crystalline areas crystallization technology, be used for by being formed on technology that amorphous semiconductor film on the substrate makes the semiconductor film crystallization with laser beam irradiation, being added into crystal (not being monocrystalline) semiconductor film and carrying out laser radiation with technology of carrying out crystallization or the like such as the element of the promotion crystallization of nickel.In addition, the laser irradiating method in this specification also comprises the complanation that is used for semiconductor substrate or semiconductor film or the technology of surface modification.
Semiconductor device refers to can be by all types of devices that utilize characteristic of semiconductor to work.Such as the electro-optical device of liquid crystal indicator or light-emitting device and comprise that such electro-optical device is included in the classification of semiconductor device as the electronic installation of a part.
Remove the edge of beam spot by being arranged on slit scan laser beam between f-θ lens and the irradiating surface.At this moment, perhaps, will to irradiating surface, become easy in the image projection that slit opening is partly located by using heart f-θ lens far away to change shape of slit as f-θ lens or by rink corner (field angle) according to laser beam.Utilize said structure, even use when comprising the optical system of deflector and f-θ lens, the ratio that is included in the crystallite zone in the zone of laser beam irradiation also is reduced, and can advantageously carry out laser treatment to semiconductor film.
Though, can reduce the influence of optical axis displacement in the deflector by using slit and projecting lens with the scanning of deflector execution laser beam.In addition, by partly adjust the projection magnification ratio of image at slit opening, can reduce the influence that brings by the process errors of slit.Therefore, can holding position stability in the irradiation area on handled object.And, do not transmit stand at a high speed owing to need in equipment, not use, therefore there is the advantage of floor space (footprint) size that can reduce equipment.In addition, the operation dwell time when the scanning direction of conversing laser beam can be contracted very shortly.Correspondingly, can improve output, and can be efficiently be formed on semiconductor film on the big substrate with laser beam irradiation.
Description of drawings
In the accompanying drawings:
Fig. 1 shows laser irradiating device of the present invention;
Fig. 2 shows laser irradiating device of the present invention;
Fig. 3 shows the optical system of laser irradiating device of the present invention and distortion (distortion) characteristic of f-θ lens;
Fig. 4 shows the distortion performance of f-θ lens;
Fig. 5 shows the optical system of laser irradiating device of the present invention;
Fig. 6 shows the illuminated portion and the relation of the position between the mask shape of laser beam;
Fig. 7 A and 7B show the scan method of laser beam;
Fig. 8 shows laser irradiating device of the present invention;
Fig. 9 shows laser irradiating device of the present invention;
Figure 10 A and 10B show the crossover method of beam spot;
Figure 11 A and 11B show the crossover method of beam spot;
Figure 12 A and 12B show laser irradiating device of the present invention and shape of slit;
Figure 13 A and 13B show the thin film chip of execution mode 4;
Figure 14 A and 14B show that the thin-film transistor of execution mode 4 is mounted the mode on the substrate that is formed with pixel thereon;
Figure 15 shows the CPU of execution mode 5;
Figure 16 shows shape, laser radiation track and the energy density distribution of laser beam;
Figure 17 A and 17B show the energy density distribution of laser beam; With
Figure 18 A and 18B show the example of laser irradiating device.
Embodiment
Embodiments of the present invention and embodiment will be described with reference to the drawings.Note, one of ordinary skill in the art will readily recognize that the present invention is not subject to following description, and under the situation that does not break away from the spirit and scope of the present invention, in form and details, can make various variations.Therefore, the present invention should not be subject to the following description to execution mode and embodiment.
The laser irradiating device of this execution mode carries out laser radiation such as the deflector of galvanometer mirror from laser oscillator emitted laser bundle by using.For laser beam is shaped (shape), f-θ lens, slit and cylindrical lens are set in the optical system.Fig. 1 shows the example of laser irradiating device of the present invention.
Pass cylinder expander 102 from laser oscillator 101 emitted laser bundles, it is at the width of a direction expanded beam.Cylinder expander 102 is used to form the major axes orientation of wire beam spot on irradiating surface.Notice that under the situation of the laser beam that has wire shape or rectangular shape from the laser oscillator emission, cylinder expander 102 is not to be provided.The laser beam that has passed cylinder expander 102 enters galvanometer mirror 103.Galvanometer mirror has the function of deflection laser bundle, and can be by changing the inclination angle laser beam flying irradiating surface of galvanometer mirror.Use galvanometer mirror to be described at this as the example of arrangement for deflecting, yet, the invention is not restricted to this, and also can use deflector to replace galvanometer mirror such as polygon mirror, AOD (acousto-optic deflection device), EOD (electro-optic deflector), resonance scanner, holography scanner or conical scanner.
Entered heart f-θ lens 104 far away by the laser beam of galvanometer speculum 103 deflections.Heart f-θ lens far away are the f-θ lens with image space heart characteristic far away.When using heart f-θ lens far away, can fixed laser Shu Congyuan heart f-θ lens to the incidence angle of irradiating surface.In this embodiment, will describe by utilizing such knowledge to help in optical system, to be provided with the example of slit.
Consider the sweep limits of the wavelength of laser beam, the expectation on irradiating surface and aberration character and suitably design heart f-θ lens far away used herein.As the example of heart f-θ lens 104 far away, display design is used for the cross section of f-θ lens of the laser beam of 532nm wavelength in Fig. 3.Heart f-θ lens 104 far away are formed by four spherical lenses (lens 202, lens 203, lens 204 and lens 205).As the material of lens, use BK7.It is the second surface of 1638.2mm and the lens thickness of 5.6mm for the-first surface of 57.5mm, radius of curvature that lens 202 have radius of curvature.Lens 203 have radius of curvature for the first surface of-168.3mm, radius of curvature for-second surface of 91.7mm and the lens thickness of 22.2mm.Lens 204 have first surface, the radius of curvature that radius of curvature is 3100mm.Lens 205 have first surface, the radius of curvature that radius of curvature is 979.5mm.Lens 202 are set at from galvanometer mirror 201 and are the position of 116.1mm.The distance that lens 202 and lens are 203 is set as 10.3mm, and the distance that lens 203 and lens are 204 is set as 0.1mm, and the distance of 205 on lens 204 and lens is set as 0.1mm.And the distance between lens 205 and the irradiating surface 207 is set as 326.8mm.Notice that in this manual, in the description that lens are provided with, the direct of travel of laser beam is known as the front.In addition, in lens, the light incident side of laser beam is represented by first surface, and emitting side is represented by second surface.When the laser beam incident side of the center of curvature at lens, the symbol of radius of curvature is born, and when the center of curvature during in emitting side, the symbol of radius of curvature is positive.
Here, heart f-θ lens 104 far away are designed to have distortion shown in Figure 4.Suppose that y is a picture altitude, f is a focal length, and θ is the incidence angle that laser beam arrives heart f-θ lens 104 far away, and by above-mentioned distortion, heart f-θ lens 104 far away have the represented f-θ characteristic by formula y=f θ.Utilize above-mentioned f θ characteristic, the enough laser beams of energy are with the plane of constant speed scan process object.In addition, heart f-θ lens 104 far away have image space heart characteristic far away.Fig. 3 shows the light path of the laser beam of the zones of different of passing heart f-θ lens 104 far away.The light path 208 that is shown by solid line is 0 ° situation corresponding to the inclination angle of galvanometer mirror, the light path 209 that is shown by dotted line is 4 ° a situation corresponding to the inclination angle of galvanometer mirror, and the light path 210 that is shown by dash line is 8 ° situation corresponding to the inclination angle of galvanometer mirror.After these main rays passed heart f-θ lens 104 far away, they always entered irradiating surface from vertical direction.Here, under slit 206 is arranged on situation between lens 205 and the irradiating surface 207, when being 0 °, 4 ° and 8 ° at the inclination angle, the distance between slit 206 and the irradiating surface 207 represents by a, b and c respectively.Heart characteristic far away by above-mentioned obtains concerning a=b=c.Laser irradiating device of the present invention is noticed this aspect, and carries out laser radiation by the image projection that slit opening is partly located to irradiating surface.By said structure, can be easily slit and irradiating surface be arranged to be independent of the relation of conjugate position each other of the rink corner of laser beam.Therefore, can advantageously make the whole sweep limits crystallization of laser beam.
The slit that the present invention uses is not special the qualification, and can use the structure that has when laser beam passes slit the low part of intensity that can the intercepting laser bundle or the slit of shape.For example, by using tabular slit 105 shown in Figure 1 to block laser beam.The position that slit 105 can be adjusted it according to the kind or the energy of laser beam.Correspondingly, can be adjusted at the size of the slit opening part between the slit.In laser irradiating device of the present invention, above-mentioned slit 105 is configured to act on the major axes orientation of beam spot.In addition, Fig. 5 shows the relation between the cross section of the shape of slit and beam spot.Slit 1201 is configured to be parallel to the scanning direction of beam spot 1202, and the width of slit opening part is set as in sweep limits constant.Correspondingly, can remove the two edges that the conduct of beam spot has low energy area.And, can adjust the length of beam spot at major axes orientation.
The shape of slit can be such: only corresponding to providing the slit 109 of opening portion as Fig. 2 in the part with the zone of laser beam flying.This makes it possible to precalculated position laser radiation on the substrate 107.Fig. 6 shows the example by using above-mentioned slit 109 to carry out laser radiation.Fig. 6 shows with the mask shape in the semiconductor film patterning with the example of the relation between the part of laser beam irradiation.Arrow among the figure refers to the scanning direction of laser beam.With laser beam irradiation and after the crystallization, according to being used for mask shape 301 with the semiconductor film patterning with the semiconductor film patterning.The part that zone 303 representatives are shone with laser beam 302.The part of representing laser beam to be blocked by dash line region surrounded 304 by slit.Utilize said method, do not need the part of crystallization without laser beam irradiation; Correspondingly, can reduce damage to substrate.
A part is being carried out under the situation of laser beam irradiation, can use above-mentioned slit 109 to come the intercepting laser bundle with replacements such as AO modulators.In this case, can discern according to mask information with the part of laser beam flying, and the AO modulator can with the operation of galvanometer mirror synchronously so that the part that only must be scanned with laser beam irradiation.
The laser beam that has passed slit 109 enters cylindrical lens 106.Cylindrical lens 106 is configured to form the major axes orientation of beam spot on irradiating surface.Cylindrical lens 106 makes slit opening part and substrate 107 have conjugate relation each other.That is, suppose that the distance between slit opening part and the cylindrical lens 106 is " a ", the distance between cylindrical lens 106 and the substrate 107 is " b ", and the focal length of cylindrical lens 106 is " f ", then forms the relation of formula (1).
1/f＝1/a+1/b...(1)
In the slit opening part, the image that the edge of formation laser beam is eliminated; Correspondingly, utilize above-mentioned relation, substrate is also used the laser beam irradiation with favourable Energy distribution.The focal length of cylindrical lens 106 can be determined, so that the image that slit opening is partly located is reduced on being projected to substrate the time.The image that slit opening is partly located is projected on the substrate with b/a magnification ratio doubly.Correspondingly, slit 109, cylindrical lens 106 and substrate 107 can be set, so that above-mentioned optical system has the distance relation of a＞b.The advantage of said structure is: in the time of on being projected to substrate, can reduce the process errors of slit edge.Like this, can make the image that slit opening partly locates and allow big relatively process errors value, and can enough laser beams scan and force down the expansion (swell) of irradiation track at the slit edge.
Cylindrical lens is not special the qualification, and can use in light incident side or emitting side and have nonreentrant surface or all have the cylindrical lens of nonreentrant surface in both sides.Consider low aberration and precision, preferably use the cylindrical lens that has nonreentrant surface at light incident side.
Semiconductor film is formed on the substrate 107, and the beam spot that forms with said method shines by scanning.As substrate 107, use with aluminium borosilicate glass or barium borosilicate glass as the glass substrate of representative, quartz base plate, ceramic substrate, stainless steel substrate, be the flexible substrate of representative, single crystalline semiconductor substrate (typically, N type or p type single crystal silicon substrate, GaAs substrate, InP substrate, GaN substrate, SiC substrate or ZnSe substrate) etc. with plastic base or acrylic acid substrate.Preferably, substrate 107 is fixed on suction (suction) stand 108, because positioning accuracy uprises in laser radiation.Suction stand 108 is provided at and transmits on the stand.Using galvanometer mirror after X-direction scanning beam point, with the transmission stand in major axes orientation (Y direction) the moving beam point of beam spot length at major axes orientation.By repeating aforesaid operations, can carry out laser radiation to the whole surface of substrate.Note, as the scan method of laser beam, the scan method that can adopt the wire beam spot 110 shown in Fig. 7 A to move back and forth, the perhaps scan method that moves along a direction of the wire beam spot shown in Fig. 7 B along X-axis.
By said method, can enough laser beam flying substrates 107.Notice that when using laser beam flying, slit 105 or slit 109, the cylindrical lens 106 that is used for projection and substrate 107 fully are fixed on above-mentioned optical system.Therefore, even produce the optical axis displacement in such as the deflector of galvanometer mirror, the irradiation track of laser beam also can utilize the transmitting function of cylindrical lens 106 to be fixed on certain position.In addition, owing to when scanning laser beam on substrate, needn't transmit stand, so do not produce the influence that causes by the linearity (straightness) of stand or pitching (pitching) etc. with high-speed mobile.Therefore, can stably carry out laser radiation, and can be advantageously with laser irradiating device of the present invention laser beam irradiation semiconductor film.
Embodiment 1
Embodiment 1 will describe by synthetic and come semiconductor film is carried out the example of laser radiation from a plurality of laser oscillator emitted laser bundles to improve laser radiation efficient.
In the laser oscillator 401 and 402 of Fig. 8 each all is to have 20W power output, 80MHz repetition rate, 20 to 30psec pulse duration, 532nm wavelength, 1mm beam diameter and TEM
00The mode locking pulse laser oscillator of mould (single transverse mode).The mode locking pulse laser oscillator has the high a lot of repetition rate of repetition rate that arrives hundreds of Hz than tens of traditional pulsed laser oscillator.It is generally acknowledged, after with pulse laser beam irradiation semiconductor film, spend tens to come the full solidification semiconductor film to hundreds of nsec.Use has the 10MHz or the pulsed laser oscillator of high-repetition-rate more, can semiconductor film by last laser beam fusing back and before this semiconductor film is cured with this semiconductor film of laser beam irradiation; Correspondingly, can keep molten condition.
Unlike the situation of using traditional pulsed laser oscillator, the interface in semiconductor film between solid phase and the liquid phase can be moved continuously, has in the scanning direction semiconductor film of the crystal grain of growth continuously thereby form.Particularly, can form the aggregate of crystal grain, each crystal grain has at the width of the 10-30 of the scanning direction of crystal grain μ m, preferred 10-60 μ m with at the width perpendicular to about 1-5 μ m of scanning direction.
The laser beam that sends from laser oscillator 401 passes half-wave plate 403.After laser beam passed half-wave plate 403, laser beam was by the s-polarization.And, be reflected mirror 405 reflection and enter polarization beam apparatus 406 of laser beam.The laser beam of launching from laser oscillator 402 passes half-wave plate 404.After laser beam passed half-wave plate 404, laser beam was by the p-polarization.At polarization beam apparatus 406 places, above-mentioned two laser beams are synthesized.The laser beam that is synthesized passes cylinder expander 407.The major axes orientation of wire beam spot on irradiating surface forms by cylinder expander 407.By under the situation of laser oscillator emission, cylinder expander 407 is not to be provided at the laser beam with wire shape or rectangular shape.The laser beam that has passed cylinder expander 407 enters galvanometer mirror 408.Galvanometer mirror 408 has the function of deflection laser bundle, and by changing the inclination angle of galvanometer mirror 408, can enough wire beam spot scanning irradiating surfaces.
Entered heart f-θ lens 409 far away by the laser beam of galvanometer speculum 408 deflections.Heart f-θ lens 409 far away make that sweep speed is constant when scanning irradiating surface with the beam spot that forms.In addition, heart f-θ lens 409 far away used herein are designed to have image space heart characteristic far away.Therefore, the laser beam that has passed heart f-θ lens 409 far away has the constant incidence angle for irradiating surface at the inclination angle that is independent of galvanometer mirror 408.Utilize said structure, be easier to slit being set between heart f-θ lens 409 far away and the irradiating surface and will becoming to the irradiating surface in image projection that slit opening is partly located.Consider the aberration characteristic of wavelength, sweep limits and the expectation of laser beam, design above-mentioned heart f-θ lens 409 far away by making up a plurality of spherical lenses or cylindrical lens.Under the situation that heart f-θ lens 409 far away are formed by a plurality of lens, in order to prevent the loss of laser beam in the optical system as far as possible, preferably be formed for the structure that prevents that laser beam from losing, wherein lens surperficial coated has anti-reflective film.
The laser beam that has passed heart f-θ lens 409 far away is by slit 410.Slit 410 is configured to act on the major axes orientation of wire beam spot; Correspondingly, can remove the low zone of energy at the place, two edges of wire beam spot.And, can adjust the length of beam spot at major axes orientation.
Then, the image that slit opening is partly located projects on the irradiating surface by the cylindrical lens on the major axes orientation that acts on the wire beam spot 411.By cylindrical lens 411, slit 410 is set at into conjugate position with irradiating surface.Notice that cylindrical lens 411 is not special the qualification, and can use in light incident side or emitting side and have nonreentrant surface or all have the cylindrical lens of nonreentrant surface in both sides.Consider low aberration and precision, preferably use the cylindrical lens that has nonreentrant surface at light incident side.
By said method, the beam spot of length with 20 μ m of the length of 500 μ m of major axes orientation and minor axis direction is formed.Scan the substrate 412 that is formed with semiconductor film on it with the beam spot that forms.As substrate 412, use with aluminium borosilicate glass or barium borosilicate glass as the glass substrate of representative, quartz base plate, ceramic substrate, stainless steel substrate, be the flexible substrate of representative or single crystalline semiconductor substrate (typically, N type or p type single crystal silicon substrate, GaAs substrate, InP substrate, GaN substrate, SiC substrate or ZnSe substrate) etc. with plastic base or acrylic acid substrate.Preferably, substrate 412 is fixed on the suction stand 413 in laser radiation, because positioning accuracy uprises.Suction stand 413 is provided on the Y stand.Using galvanometer mirror after X-direction scanning beam point, with the Y stand in the major axes orientation moving beam point of beam spot length at major axes orientation.By repeating aforesaid operations, can carry out laser radiation to the whole surface of semiconductor film.
In the laser crystallization apparatus of this embodiment, can remove the low zone of energy of the two edges of wire beam spot; Correspondingly, can reduce the ratio in the crystallite zone that is included in the laser radiation zone, and can advantageously carry out laser radiation semiconductor film.
Embodiment 2
Embodiment 2 will describe by synthesizing the example that a plurality of beam spots carry out laser radiation with deflector from a plurality of laser oscillator emitted laser bundles and at irradiating surface.
In the laser oscillator 501 and 502 of Fig. 9 each all is to have 10W power output, 80MHz repetition rate, 20 to 30psec pulse duration, 532nm wavelength, 1mm beam diameter and TEM
00The mode locking pulse laser oscillator of mould (single transverse mode).The mode locking pulse laser oscillator has the high a lot of repetition rate of repetition rate that arrives hundreds of Hz than tens of traditional pulsed laser oscillator.It is generally acknowledged, after with pulse laser beam irradiation semiconductor film, spend tens to come the full solidification semiconductor film to hundreds of nsec.Use has the 10MHz or the pulsed laser oscillator of high-repetition-rate more, can semiconductor film by last laser beam fusing back and before this semiconductor film is cured with this semiconductor film of laser beam irradiation; Correspondingly, can keep molten condition.
Unlike the situation of using traditional pulsed laser oscillator, the interface in semiconductor film between solid phase and the liquid phase can be moved continuously, has in the scanning direction semiconductor film of the crystal grain of growth continuously thereby form.Particularly, can form the aggregate of crystal grain, each crystal grain has at the width of the 10-30 of the scanning direction of crystal grain μ m, preferred 10-60 μ m with at the width perpendicular to about 1-5 μ m of scanning direction.
Pass through cylinder expander 503 from laser oscillator 501 emitted laser bundles, on irradiating surface, to form the major axes orientation of wire beam spot.By under the situation of laser oscillator emission, cylinder expander 503 is not to be provided at the laser beam with wire shape or rectangular shape.The laser beam that has passed cylinder expander 503 enters galvanometer mirror 505.Galvanometer mirror 505 has the function of deflection laser bundle, and by changing the inclination angle of galvanometer mirror 505, can enough laser beam flying irradiating surfaces.
Entered heart f-θ lens 507 far away by the laser beam of galvanometer speculum 505 deflections.Heart f-θ lens 507 far away make that sweep speed is constant when scanning irradiating surface with the beam spot that forms.In addition, heart f-θ lens 507 far away used herein are designed to have image space heart characteristic far away.Therefore, the laser beam that has passed heart f-θ lens 507 far away has the constant incidence angle for irradiating surface at the inclination angle that is independent of galvanometer mirror 505.By said structure, be easier to slit being set between heart f-θ lens 507 far away and the irradiating surface and will becoming to the irradiating surface in image projection that slit opening is partly located.Consider the aberration characteristic of wavelength, sweep limits and the expectation of laser beam, design above-mentioned heart f-θ lens 507 far away by making up a plurality of spherical lenses or cylindrical lens.Under the situation that heart f-θ lens 507 far away are formed by a plurality of lens, in order to prevent the loss of laser beam in the optical system as far as possible, preferably be formed for the structure that prevents that laser beam from losing, wherein lens surperficial coated has anti-reflective film.
The laser beam that has passed heart f-θ lens 507 far away is by slit 509.Slit 509 is configured to act on the major axes orientation of wire beam spot; Correspondingly, can remove the low zone of energy of an edge of beam spot.And, can adjust the length of wire beam spot at major axes orientation.
Then, the image partly located of slit opening is projected on the irradiating surface by the cylindrical lens on the major axes orientation that acts on the wire beam spot 511.By cylindrical lens 511, slit 509 and irradiating surface are configured to conjugate position.Notice that cylindrical lens 511 is not special the qualification, and can use in light incident side or emitting side and have nonreentrant surface or all have the cylindrical lens of nonreentrant surface in both sides.Consider low aberration and precision, preferably use the cylindrical lens that has nonreentrant surface at light incident side.
Be similar to aforesaid way,, will form the beam spot of expectation from laser oscillator 502 emitted laser bundles by using cylinder expander 504, galvanometer mirror 506, heart f-θ lens 508 far away, slit 509 and cylindrical lens 512.
509 of the slits of this equipment act on an edge of beam spot in the major axes orientation.The edge of the opposite side that slit 509 does not act on thereon overlaps each other; Correspondingly, energy density is set as and is suitable for annealing semiconductor film.Here, describe the synthetic method of laser beam in detail with reference to figure 10A and 10B.Figure 10 A shows the shape of two beam spots on the irradiating surface.In the drawings, first beam spot, the 1301 expression beam spots that form from laser oscillator 501 emitted laser bundles, second beam spot, the 1302 expression beam spots that form from laser oscillator 502 emitted laser bundles.
Figure 10 B shows along the energy density in the cross section that A-A ' line obtained of beam spot.Threshold value (Y) expression forms the energy density of bulky grain crystal, and threshold value (Z) expression causes the energy density such as the damage of the film rupture of semiconductor film.Energy density from threshold value (Y) to threshold value (Z) is the energy area that only forms the bulky grain crystal, and it is suitable for annealing semiconductor film.
Figure 10 B shows the Energy distribution of the beam spot that forms by synthetic first beam spot 1301 and second beam spot 1302.Edge at the major axes orientation of a side of first beam spot 1301 and second beam spot 1302 is sheltered from by slit.Therefore, the Energy distribution of two of He Cheng beam spot edges all is steep (sharp).On the other hand, before synthetic beam spot, has gaussian intensity profile at each edge of the side that first beam spot 1301 and second beam spot 1302 overlap each other.Then, when adjusting the relative position of beam spot, first beam spot 1301 and second beam spot 1302 overlap each other.Correspondingly, in the crossover zone that beam spot overlaps each other, can access energy density with the Energy distribution that is suitable for annealing.
By using the synthetic beam spot of said method, can be to carry out laser radiation in the long beam spot length of major axes orientation.Therefore, the wideer zone of the enough laser beam irradiations of energy in single pass, thus semiconductor element can have design freedom.Said method has the little advantage of laser beam loss in optical system, because need be such as the optical element of wave plate or polarization beam apparatus.When a plurality of laser beams are polarized beam splitter when synthetic, surpassing under the situation of damage threshold of polarization beam apparatus at the gross energy of laser beam according to the method for this embodiment is effective.
Note, undertaken under the situation of laser radiation, must synthesize two laser beams so that have only a beam spot to be formed on the irradiating surface constantly by the method for this embodiment.Therefore, synchronous by the operation that makes galvanometer mirror, the beam spot that is formed by galvanometer mirror 505 and galvanometer mirror 506 deflections can be formed constantly and overlap each other on irradiating surface.
By said method, have in the length of major axes orientation 500 μ m with at the beam spot of the length of minor axis direction 20 μ m and be formed.Scan the substrate 513 that is formed with semiconductor film on it with the beam spot that forms.As substrate 513, use with aluminium borosilicate glass or barium borosilicate glass as the glass substrate of representative, quartz base plate, ceramic substrate, stainless steel substrate, be the flexible substrate of representative or single crystalline semiconductor substrate (typically, N type or p type single crystal silicon substrate, GaAs substrate, InP substrate, GaN substrate, SiC substrate or ZnSe substrate) etc. with plastic base or acrylic acid substrate.Preferably, substrate 513 is fixed on the suction stand 514 in laser radiation, because positioning accuracy uprises.Suction stand 514 is provided on the Y stand.Using galvanometer mirror after X-direction scanning beam point, with the Y stand in the major axes orientation moving beam point of beam spot length at major axes orientation.By repeating aforesaid operations, can carry out laser radiation to the whole surface of semiconductor film.
In the laser crystallization apparatus of this embodiment, can remove the low zone of energy of the two edges of wire beam spot; Correspondingly, can reduce the ratio in the crystallite zone that is included in the laser radiation zone, and can advantageously carry out laser radiation semiconductor film.
The example of synthetic two beam spots on irradiating surface has been described in this embodiment; Yet the number of the beam spot that is synthesized is not limited thereto.As an example, the method for synthetic three beam spots is displayed among Figure 11 A and the 11B.Figure 11 A shows the shape of three beam spots on the irradiating surface, and Figure 11 B shows the energy density in the A-A ' cross section of beam spot.Be similar to Figure 10 B, the energy density from threshold value (Y) to threshold value (Z) is the energy area that only forms the bulky grain crystal, and it is suitable for annealing semiconductor film.For synthetic three beam spots, edge of second beam spot 1302 and first beam spot, 1301 crossovers, another edge and the three beam of second beam spot 1302 are put 1303 crossovers.Correspondingly, gaussian intensity profile is at crossover zone crossover, thereby forms the energy density with the Energy distribution that is suitable for annealing in synthetic back.In addition, first beam spot 1301 and three beam point 1303 are sheltered from by slit at another edge of major axes orientation.Therefore, can remove the low-energy zone at beam spot edge.Correspondingly, can reduce the ratio in the crystallite zone that is included in the laser radiation zone.
Embodiment 3
Embodiment 3 will describe by change image projection that the shape that is arranged on the slit between f-θ lens and the irradiating surface partly the locates slit opening example to the irradiating surface according to the incidence angle of laser beam.
Figure 12 A and 12B show the example of above-mentioned optical system.Enter galvanometer mirror 601 from laser oscillator emitted laser bundle.Galvanometer mirror 601 has the function of deflection laser bundle, and by changing the inclination angle of galvanometer mirror 601, can enough laser beam flying irradiating surfaces.The f-θ lens 602 that comprised two spherical lens 602a and 602b by the laser beam of galvanometer speculum 601 deflections gather irradiating surface 605.Having passed the beam spot of the laser beam of f-θ lens 602 is got rid of by slit 603 at two edges of major axes orientation.
Shown in Figure 12 A, slit 603 is configured to crooked.Crooked degree depends on that laser beam determines to the incidence angle of irradiating surface.Here, two light paths 606 and 607 with different incidence angles are used as example and provide, and the shape that is arranged on the slit 603 in this optical system is described.Light path 606 is when by the light path of the laser beam of galvanometer speculum 601 deflections when vertical direction enters irradiating surface 605.On the other hand, light path 607 is when the light path of laser beam when incline direction enters irradiating surface 605.The incidence angle of light path 607 is represented with θ in the drawings.In laser irradiating device of the present invention, light path 606 from slit 603 to projecting lens 604 distance and light path 606 from projecting lens 604 to irradiating surface 605 distance represent with reference marker a and b respectively.Light path 607 from slit 603 to projecting lens 604 distance and light path 607 from projecting lens 604 to irradiating surface 605 distance represent with reference marker a ' and b ' respectively.Here, when the focal length of projecting lens 604 was represented with f, in order to obtain the conjugate position relation between slit opening part and irradiating surface, following formula (1), (2) and (3) can be satisfied:
1/f＝1/a+1/b...(1)
a′＝ab/(b+a(1-cosθ))...(2)
b′＝b/cosθ...(3)。
By said structure, the image that slit opening is partly located can be projected on the irradiating surface.Correspondingly, the influence of the refract light at slit place can be eliminated.Projection magnification ratio is respectively a/b and a '/b ' in the projection of light path 606 and light path 607, and projection magnification ratio is different between light path.Therefore, in order to offset this difference, can change the width of slit opening part according to the incidence angle θ of laser beam.Figure 12 B shows the shape of slit 603a and 603b, wherein changes the width of opening portion according to the incidence angle of laser beam.The width of supposing the slit opening part is X in the zone that light path 606 is passed through
1, and in the zone that light path 607 is passed through, be X
2, then obtain to concern X
1＞X
2X
1And X
2Formula (4) below satisfying:
X
2＝bX
1cosθ/(b+a(1-cosθ))...(4)
If it is manufactured to have the slit of said structure, then can be enough each beam spot that all has a major axes orientation same widths scan whole irradiating surface.Under the situation of for example θ=10 ° and a=b, obtain X from above-mentioned formula (4)
2=0.97X
1In this case, slit opening partly has different width X
1And X
2Owing to pass and have X
1The amount of energy of laser beam in zone have X with passing
2The amount of energy of laser beam in zone identical, therefore produced the difference of the energy density of the laser beam that is used to shine irradiating surface.Yet because above-mentioned difference is about a few percent, therefore energy density can be provided in and obtain the megacryst particle in the whole irradiation area when handling semiconductor film, and does not have practical problem.In addition, when expectation irradiation energy density is more constant, can changes the sweep speed of beam spot continuously by the service speed of control galvanometer mirror, thereby offset above-mentioned energy density difference.At this moment can carry out laser radiation according to the method for describing among Japanese Laid-Open Patent Application No.2004-146823 or the U.S. publication application No.2004/0065643 etc.Incorporate all the elements of these lists of references into by reference at this.In order to offset energy density difference, f-θ lens can be designed to have field curvature.Correspondingly, pass and have X
1Laser beam minor axis direction at beam spot on irradiating surface in zone form wide width, have X and pass
2The laser beam in zone form the narrow width of this beam spot, thereby make irradiation energy density constant on whole irradiation area.
In said method, described slit and be provided in example crooked in the optical system with shape shown in Figure 12 B; Yet the shape that is arranged on the slit in the laser irradiating device of the present invention is not limited thereto.For example, can adopt method shown in Figure 5, wherein, the slit 1201 that has the edge and be the opening portion of straight line is bent in optical system and is configured to tilt.
By said method, can remove the low zone of energy of the two edges of wire beam spot; Correspondingly, the ratio in the crystallite zone that is included in the laser radiation zone can be reduced, and laser radiation can be advantageously carried out semiconductor film.The advantage of this embodiment is: owing to do not need heart f-θ lens far away, therefore can form optical system with low cost.In addition, another advantage of this embodiment is: owing to can form optical system by enough a spot of lens, therefore can prevent the loss of laser beam in the optical system.
Embodiment 4
Embodiment 4 will describe a kind of processing to 14B with reference to figure 13A, wherein, use is made thin film chip by the substrate of any described method manufacturing in execution mode or embodiment 1,2 and 3, and this thin film chip is installed on the substrate that is formed with pixel portion on it.
At first, prepare the substrate that is formed with polycrystalline semiconductor thin film on it by laser radiation.Figure 13 A display base plate 701 and at the semiconductor film 702 that is formed on after the laser radiation on the substrate.On the substrate 701 with semiconductor film 702 patternings of crystallization after or forming gate electrode or mask etc. after, mix.Notice that the patterning of semiconductor film can carry out before coming crystallization with laser beam, perhaps crystallization can be carried out before patterning.Then, by activating dopant or forming various dielectric films or wiring etc., a plurality of integrated circuits are formed on the substrate.In this is handled, by using glass substrate or ceramic substrate, can utilize large substrates on one side with several meters, and the number of the integrated circuit that can obtain from a substrate become than under the situation of using silicon substrate or SOI substrate greatly.Correspondingly, can obtain the raising of output and this processing is suitable for producing in batches.By after forming integrated circuit shown in Figure 13 B cutting substrate 701, integrated circuit is by separated from one another, and forms thin film chip 703.
Then, in Figure 14 A and 14B, show the mode that will be installed to the thin film chip that said method forms on the substrate that is formed with pixel portion.In Figure 14 A, pixel portion 802 and scan line drive circuit 803 are formed on the substrate 801.And the signal-line driving circuit that is formed in the thin film chip 804 is installed on the substrate 801.Particularly, the signal-line driving circuit that is formed in the thin film chip 804 is attached to substrate 801 and is electrically connected to pixel portion 802.Pixel portion 802, scan line drive circuit 803 and be formed on signal-line driving circuit in the thin film chip 804 each is provided with power supply potential or various signals or the like by FPC 805.
In Figure 14 B, pixel portion 812 and scan line drive circuit 813 are formed on the substrate 811.In addition, the signal-line driving circuit that is formed in the thin film chip 814 further is installed on the FPC 815, and described FPC 815 is installed on the substrate 811.Pixel portion 812, scan line drive circuit 813 and be formed on signal-line driving circuit in the thin film chip 814 each is provided with power supply potential or various signals or the like by FPC 815.
The installation method of thin film chip is not special the qualification, and can adopt known COG (glass top chip) method, wire bonding method or TAB (winding automated bonding) method or the like.And the position that is used to install thin film chip is not limited to those positions shown in Figure 14 A and the 14B, just can as long as obtain to be electrically connected.Although in Figure 14 A and 14B, described the example that uses the thin film chip that only is used to form signal-line driving circuit, can use thin film chip to form scan line drive circuit.In addition, controller, CPU or memory etc. can be formed and can be mounted by using thin film chip.In addition, thin film chip can not be used to form whole signal-line driving circuit or scan line drive circuit, but the part in the drive circuit.
Notice that drive circuit is mounted the TFT that employed transistor in the pixel portion in thereon the semiconductor display device is not limited to comprise the amorphous semiconductor film that uses amorphous silicon etc. as thin film chip.Use the TFT of microcrystalline semiconductor film or polycrystal semiconductor film to be used.Use the transistor of monocrystalline silicon formation or use the transistor of SOI to be used.Alternatively, use the transistor of organic semi-conductor transistor or use carbon nano-tube to be used.By using the thin film chip separate with substrate and by described thin film chip being installed to the integrated circuit that forms on the substrate such as drive circuit, with comprising on the substrate of pixel portion that the situation that forms all circuit compares, can realize high yield, and can be easily according to the optimization of the characteristic implementation of each circuit.
Embodiment 5
Embodiment 5 will describe the structure of the CPU (CPU) that makes by use polycrystalline semiconductor thin film substrate, and described polycrystalline semiconductor thin film substrate is made by any described method in execution mode or embodiment 1,2 and 3.
Figure 15 shows the structure of the CPU of this embodiment.The CPU that shows among Figure 15 mainly comprises arithmetic and logical unit (ALU) 901, ALU controller 902, command decoder 903, interrupt control unit 904, timing controller 905, register 906, register controller 907, bus interface (bus I/F) 908 and the read-only memory (ROM) 909 on the substrate 900.Significantly, the CPU that shows among Figure 15 is an example that structure is simplified, and actual CPU may have various structures according to purposes.
The instruction that is input to CPU by bus I/F 908 is imported into command decoder 903 and decoded there, is imported into ALU controller 902, interrupt control unit 904, register controller 907 and timing controller 905 then.
In this embodiment, be described as an example with CPU; Yet semiconductor device of the present invention is not limited to CPU.Be similar to embodiment 4, using glass substrate or ceramic substrate is favourable in batch process, because it makes a plurality of CPU can be fabricated on the large-size substrate.
The series number that the application submitted to Japan Patent office based on December 16th, 2005 is the Japanese patent application of 2005-362766, incorporates its all the elements at this into by reference.
Claims (36)
1. laser irradiating method comprises step:
The inclination angle of the deflector surface by changing deflector makes from the beam steering of laser oscillator emitted laser;
By imaging optical system the laser beam of deflection is gathered irradiating surface;
Tackle the edge of described laser beam by being arranged on slit between described imaging optical system and the described irradiating surface;
By projecting lens will be in the path of described laser beam process the image projection that forms of described slit place to described irradiating surface, to form beam spot; And
Scan described irradiating surface with described beam spot.
2. laser irradiating method according to claim 1, wherein said laser oscillator are from by at least a cw lasing device of selecting the following group that constitutes: Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite laser, Ti: sapphire laser, He-Cd laser device, GaN laser, GaAs laser and InAs laser.
3. laser irradiating method according to claim 1, wherein said laser oscillator are from by at least a pulsed laser oscillator of selecting the following group that constitutes: Ar laser, Kr laser, excimer laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, GaN laser, GaAs laser, InAs laser, copper vapor laser and gold vapor laser.
4. laser irradiating method according to claim 1, wherein said laser beam are the high order harmonic components that is changed by nonlinear optical device.
5. laser irradiating method according to claim 1, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
6. laser irradiating method according to claim 1, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
7. laser irradiating method according to claim 1, wherein said projecting lens are projection face lens.
8. laser irradiating method comprises step:
Handle from laser oscillator emitted laser bundle by optical system, on irradiating surface, to form the wire beam spot;
The inclination angle of the deflector surface by changing deflector makes described laser-beam deflection;
By imaging optical system the laser beam of deflection is gathered described irradiating surface;
Tackle the edge of described laser beam by being arranged on slit between described imaging optical system and the described irradiating surface;
The image projection that will form at the slit place in the path of described laser beam process by projecting lens is to described irradiating surface; And
Scan described irradiating surface with described wire beam spot.
9. laser irradiating method according to claim 8, wherein said laser oscillator are from by at least a cw lasing device of selecting the following group that constitutes: Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite laser, Ti: sapphire laser, He-Cd laser device, GaN laser, GaAs laser and InAs laser.
10. laser irradiating method according to claim 8, wherein said laser oscillator are from by at least a pulsed laser oscillator of selecting the following group that constitutes: Ar laser, Kr laser, excimer laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, GaN laser, GaAs laser, InAs laser, copper vapor laser and gold vapor laser.
11. laser irradiating method according to claim 8, wherein said laser beam are the high order harmonic components that is changed by nonlinear optical device.
12. laser irradiating method according to claim 8, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
13. laser irradiating method according to claim 8, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
14. laser irradiating method according to claim 8, wherein said projecting lens are projection face lens.
15. the manufacture method of a semiconductor device comprises step:
On substrate, form semiconductor film;
The inclination angle of the deflector surface by changing deflector makes from the beam steering of laser oscillator emitted laser;
By imaging optical system the laser beam of deflection is gathered irradiating surface;
Tackle the edge of described laser beam by being arranged on slit between described imaging optical system and the described irradiating surface;
By projecting lens will be in the path of described laser beam process the image projection that forms of described slit place to described irradiating surface, to form beam spot; And
Scan described semiconductor film with described beam spot, so that whole semiconductor film is carried out laser radiation.
16. the manufacture method of semiconductor device according to claim 15, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
17. the manufacture method of semiconductor device according to claim 15, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
18. the manufacture method of semiconductor device according to claim 15, wherein said semiconductor device comprises liquid crystal indicator or light-emitting device.
19. the manufacture method of a semiconductor device comprises step:
On substrate, form semiconductor film;
Handle from laser oscillator emitted laser bundle by optical system, on irradiating surface, to form the wire beam spot;
The inclination angle of the deflector surface by changing deflector makes described laser-beam deflection;
By imaging optical system the laser beam of deflection is gathered described irradiating surface;
Tackle the edge of described laser beam by being arranged on slit between described imaging optical system and the described irradiating surface;
By projecting lens will be in the path of described laser beam process the image projection that forms of described slit place to described irradiating surface; And
Scan described semiconductor film with described wire beam spot, so that whole semiconductor film is carried out laser radiation.
20. the manufacture method of semiconductor device according to claim 19, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
21. the manufacture method of semiconductor device according to claim 19, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
22. the manufacture method of semiconductor device according to claim 19, wherein said semiconductor device comprises liquid crystal indicator or light-emitting device.
23. a laser irradiating device comprises:
Laser oscillator;
Deflector, it makes from the beam steering of described laser oscillator emitted laser at deflector surface;
Imaging optical system, its described laser beam with described deflector gathers irradiating surface;
Be used to tackle the slit at the edge of described laser beam, it is provided between described imaging optical system and the described irradiating surface; And
Projecting lens, the image projection that the described slit place that it will be in the path of described laser beam process forms be to described irradiating surface,
Wherein, described deflector can be by changing the inclination angle described irradiating surface of described laser beam flying of described deflector surface.
24. laser irradiating device according to claim 23, wherein said laser oscillator are from by at least a cw lasing device of selecting the following group that constitutes: Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite laser, Ti: sapphire laser, He-Cd laser device, GaN laser, GaAs laser and InAs laser.
25. laser irradiating device according to claim 23, wherein said laser oscillator are from by at least a pulsed laser oscillator of selecting the following group that constitutes: Ar laser, Kr laser, excimer laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, GaN laser, GaAs laser, InAs laser, copper vapor laser and gold vapor laser.
26. laser irradiating device according to claim 23, wherein said laser beam are the high order harmonic components that is changed by nonlinear optical device.
27. laser irradiating device according to claim 23, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
28. laser irradiating device according to claim 23, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
29. laser irradiating device according to claim 23, wherein said projecting lens are projection face lens.
30. a laser irradiating device comprises:
Laser oscillator;
Optical system, it is handled from described laser oscillator emitted laser bundle, to form the wire beam spot on irradiating surface;
Deflector, it makes described laser-beam deflection at the deflector surface place;
Imaging optical system, its described laser beam with described deflector gathers described irradiating surface;
Be used to tackle the slit at the edge of described laser beam, it is provided between described imaging optical system and the described irradiating surface; And
Projecting lens, the image projection that the described slit place that it will be in the path of described laser beam process forms to described irradiating surface,
Wherein, described deflector can be by changing the inclination angle described irradiating surface of described laser beam flying of described deflector surface.
31. laser irradiating device according to claim 30, wherein said laser oscillator are from by at least a cw lasing device of selecting the following group that constitutes: Ar laser, Kr laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, ruby laser, alexandrite laser, Ti: sapphire laser, He-Cd laser device, GaN laser, GaAs laser and InAs laser.
32. laser irradiating device according to claim 30, wherein said laser oscillator are from by at least a pulsed laser oscillator of selecting the following group that constitutes: Ar laser, Kr laser, excimer laser, CO
2Laser, YAG laser, YVO
4Laser, YLF Lasers device, YAlO
3Laser, GdVO
4Laser, Y
2O
3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, GaN laser, GaAs laser, InAs laser, copper vapor laser and gold vapor laser.
33. laser irradiating device according to claim 30, wherein said laser beam are the high order harmonic components that is changed by nonlinear optical device.
34. laser irradiating device according to claim 30, wherein said deflector are at least a by in the following group that constitutes: galvanometer mirror, polygon mirror, acousto-optic deflection device, electro-optic deflector, resonance scanner, holography scanner and conical scanner.
35. laser irradiating device according to claim 30, wherein said imaging optical system are f-θ lens or heart f-θ lens far away.
36. laser irradiating device according to claim 30, wherein said projecting lens are projection face lens.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP362766/2005 | 2005-12-16 | ||
| JP2005362766 | 2005-12-16 | ||
| PCT/JP2006/324396 WO2007069516A1 (en) | 2005-12-16 | 2006-11-30 | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101331592A CN101331592A (en) | 2008-12-24 |
| CN101331592B true CN101331592B (en) | 2010-06-16 |
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ID=38162824
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680047387XA Expired - Fee Related CN101331592B (en) | 2005-12-16 | 2006-11-30 | Laser irradiation apparatus, laser irradiation method and manufacturing method of semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8455790B2 (en) |
| KR (1) | KR101371265B1 (en) |
| CN (1) | CN101331592B (en) |
| WO (1) | WO2007069516A1 (en) |
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- 2006-11-30 WO PCT/JP2006/324396 patent/WO2007069516A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101331592A (en) | 2008-12-24 |
| WO2007069516A1 (en) | 2007-06-21 |
| US20070138151A1 (en) | 2007-06-21 |
| US8455790B2 (en) | 2013-06-04 |
| KR20080085873A (en) | 2008-09-24 |
| KR101371265B1 (en) | 2014-03-07 |
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