CN101320769A - Seat body structure of light emitting diode - Google Patents
Seat body structure of light emitting diode Download PDFInfo
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- CN101320769A CN101320769A CNA2007101234425A CN200710123442A CN101320769A CN 101320769 A CN101320769 A CN 101320769A CN A2007101234425 A CNA2007101234425 A CN A2007101234425A CN 200710123442 A CN200710123442 A CN 200710123442A CN 101320769 A CN101320769 A CN 101320769A
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- emitting diode
- light
- base material
- insulating heat
- conductive base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
The invention is a base structure for a light emitting diode. The structure comprises an insulating basic material and a functional piece. The functional piece is a hollow plate body; the bottom is jointed with the insulating heat-conductive basic material. The insulating heat-conductive basic material is arranged with at least one penetrating hole; each penetrating hole is also arranged with a conductor for the electrical connection. When the insulating heat-conductive basic material is selected as the basic material with high heating conducting coefficient, low electric inductivity and low expansion coefficient by the structure of the joint of the insulating heat-conductive basic material and the functional piece, the invention can improve th e heat-conducting effect for the base body structure.
Description
Technical field
The present invention relates to a kind of base structure of light-emitting diode, particularly relate to a kind of base structure in order to the carrying High Power LED.
Background technology
Development along with high power high luminance light-emitting diode 11, the aspect that light-emitting diode 11 is used more and more widely, indication light source, display backlight module, normal lighting as electronic product ... or the like, therefore how to improve the luminous efficiency and the luminosity of light-emitting diode 11, make light-emitting diode 11 be applied to every field more easily, be the main target of effort of present industry.Promote the method for light-emitting diode 11 luminous efficiencies, except improve the inner light extraction efficiency of wafer itself at raising, if can promote the heat dissipation of package level also is a method that solves, for this reason, develop the pedestal that can carry high wattage light-emitting diode 11, also become the important topic of present research and development.
The input power of light-emitting diode 11 has only 15～20% to convert light at present, and 80～85% input power converts heat to and nearly have.Because most input power all can't convert light to, therefore both made light-emitting diode 11 have the advantage of power saving, can't effectively convert most input power to luminous energy also, make the advantage of light-emitting diode 11 to bring into play completely.So if the heat that can't light-emitting diode 11 be produced is discharged in good time in good time, the temperature of light-emitting diode 11 wafers is too high with making, and then reduces its luminous efficiency and useful life.
Figure 1A is the base structure 10 of existing known light-emitting diode.Figure 1B is along the cutaway view of A-A hatching line among Figure 1A.The base structure 10 of existing known light-emitting diode is that light-emitting diode 11 directly is packaged on the tellite 12, utilize the medium of tellite 12 as heat radiation, but because tellite 12 makes that simultaneously as the purposes of conduction and heat radiation base structure 10 its heat conductivilitys of light-emitting diode are relatively poor.If heat energy effectively can't be done lateral transport, to cause tellite 12 can't carry the heat energy that High Power LED 11 is produced, not only have influence on the luminous efficiency of light-emitting diode 11, and influence its useful life simultaneously, moreover use the base structure 10 of existing known light-emitting diode to be used to carry the light-emitting diode 11 of higher wattage, will make the luminous efficiency of light-emitting diode 11 be restricted.
This shows that the base structure of above-mentioned existing light-emitting diode obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of base structure of novel light-emitting diode, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that the base structure of above-mentioned existing light-emitting diode exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of base structure of novel light-emitting diode, can improve the base structure of general existing light-emitting diode, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective of the base structure existence of existing light-emitting diode, and provide a kind of base structure of light-emitting diode, can be by it with the characteristic of insulating heat-conductive base material and functor separation, make heat conducting base material can select high heat transfer coefficient, low-k and low-expansion insulating heat-conductive base material for use, to promote the heat dissipation of light-emitting diode base structure, reach and improve the unclear shortcoming of existing known base structure heat dissipation, be very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.The base structure of a kind of light-emitting diode that proposes according to the present invention, in order to carry a light-emitting diode, it comprises: an insulating heat-conductive base material; And a functor, it is a hollow plate body, the bottom of this functor is to combine with this insulating heat-conductive base material.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The base structure of aforesaid light-emitting diode, wherein said insulating heat-conductive base material are an aluminium nitride base material.
The base structure of aforesaid light-emitting diode, wherein said insulating heat-conductive base material is a silicon carbide base material.
The base structure of aforesaid light-emitting diode, wherein said insulating heat-conductive base material is the borazon base material.
The base structure of aforesaid light-emitting diode, wherein said insulating heat-conductive base material is provided with at least one perforation, is provided with a conductor in each this perforation again.
The base structure of aforesaid light-emitting diode, at least one side of wherein said insulating heat-conductive base material is provided with a conductor.
The base structure of aforesaid light-emitting diode, the structure of wherein said insulating heat-conductive base material and this functor are a co-sintering structure.
The base structure of aforesaid light-emitting diode, wherein said functor are a circuit substrate.
The base structure of aforesaid light-emitting diode, wherein said functor are an optical reflection spare, and its hollow bulb has an optical reflection structure.
The base structure of aforesaid light-emitting diode, wherein said insulating heat-conductive base material and this circuit substrate are that the welding material with one tin/antimony, a tin/lead, one gold medal/tin, a bronze medal/silver or one tin/silver/copper is a bond material.
The base structure of aforesaid light-emitting diode, wherein said circuit substrate are a printed circuit board (PCB).
The base structure of aforesaid light-emitting diode, wherein said circuit substrate are a ceramic substrate.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of base structure of light-emitting diode, it comprises: an insulating heat-conductive base material and a functor.Functor is a hollow plate body, and the bottom of functor is to combine with the insulating heat-conductive base material.
Light-emitting diode base structure of the present invention, wherein the insulating heat-conductive base material can be an aluminium nitride, a carborundum or borazon base material.And the insulating heat-conductive base material is provided with at least one perforation, be provided with a conductor in each perforation again, or wherein at least one side of insulating heat-conductive base material is provided with a conductor.
Light-emitting diode base structure of the present invention, wherein the structure of insulating heat-conductive base material and functor can be for having sintering structure altogether.
Light-emitting diode base structure of the present invention, wherein functor can be a circuit substrate or an optical reflection spare, and the hollow bulb of optical reflection spare has an optical reflection structure.
Light-emitting diode base structure of the present invention, wherein circuit substrate can be a printed circuit board (PCB) or a ceramic substrate, and wherein insulating heat-conductive base material and circuit substrate are that the welding material with one tin/antimony, a tin/lead, one gold medal/tin, a bronze medal/silver or one tin/silver/copper is a bond material.
By technique scheme, the base structure of light-emitting diode of the present invention has following advantage and beneficial effect at least:
One, the insulating heat-conductive base material can select for use high heat to pass the material of coefficient, with the usefulness of accelerated luminescence diode radiating.
Two, can carry the light-emitting diode of high wattage, help the application of high power/high brightness LED.
Three, heat dissipation promotes and can improve the light extraction efficiency of light-emitting diode and prolong its useful life.
In sum, the present invention is a kind of base structure of light-emitting diode, and it comprises: insulating heat-conductive base material and functor.Functor is a hollow plate body, and its bottom combines with the insulating heat-conductive base material.The insulating heat-conductive base material is provided with at least one perforation, is provided with the conductor in order to electrically connect again in each perforation.The structure that combines with functor by the insulating heat-conductive base material, when the insulating heat-conductive base material is selected high heat transfer coefficient, low-k and low-expansion base material for use, but the heat conduction efficiency of upgrade block body structure.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on apparatus structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and the base structure of more existing light-emitting diode has the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A is the base structure of existing known light-emitting diode.
Figure 1B is for analysing and observe the enforcement illustration along A-A hatching line among Figure 1A.
Fig. 2 is that the solid of a kind of light-emitting diode base structure of the present invention is decomposed the enforcement illustration.
Fig. 3 schemes in conjunction with the embodiments for the solid of Fig. 2.
Fig. 4 is along the cutaway view of B-B hatching line among Fig. 3.
Fig. 5 schemes in conjunction with the embodiments for the solid of a kind of light-emitting diode base structure of the present invention.
Fig. 6 is along the cutaway view of C-C hatching line among Fig. 5.
Fig. 7 is that the solid of a kind of light-emitting diode base structure of the present invention is decomposed the enforcement illustration.
Fig. 8 schemes in conjunction with the embodiments for the solid of Fig. 7.
Fig. 9 is for analysing and observe the enforcement illustration along the D-D hatching line among Fig. 8.
Figure 10 is another embodiment cutaway view of optical reflection spare among Fig. 8.
Figure 11 schemes in conjunction with the embodiments for the solid of a kind of light-emitting diode base structure of the present invention.
Figure 12 is along the cutaway view of E-E hatching line among Figure 11.
Figure 13 is the figure in conjunction with the embodiments of a kind of light-emitting diode base structure of the present invention.
10: the base structure of existing known light-emitting diode
11: light-emitting diode 12: tellite
13: routing 20,20 ': the base structure of light-emitting diode
21: insulating heat-conductive base material 211: perforation
212: conductor 213: the first metal layer
22: functor 221: circuit substrate
222: optical reflection spare 223: circuit structure
224: optical reflection structure 23: outer electrode
24: in conjunction with material 241: glass
242: metal
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of base structure, structure, feature and the effect thereof of the light-emitting diode that foundation the present invention is proposed, describe in detail as after.
Fig. 2 is that the solid of a kind of light-emitting diode base structure 20 of the present invention is decomposed the enforcement illustration.Fig. 3 schemes in conjunction with the embodiments for the solid of Fig. 2.Fig. 4 is for analysing and observe the enforcement illustration along the B-B hatching line among Fig. 3.Fig. 5 schemes in conjunction with the embodiments for the solid of a kind of light-emitting diode base structure 20 of the present invention.Fig. 6 is along the cutaway view of C-C hatching line among Fig. 5.Fig. 7 is that the solid of a kind of light-emitting diode base structure 20 ' of the present invention is decomposed the enforcement illustration.Fig. 8 schemes in conjunction with the embodiments for the solid of Fig. 7.Fig. 9 is for analysing and observe the enforcement illustration along the D-D hatching line among Fig. 8.Figure 10 is another embodiment cutaway view of optical reflection spare 222 among Fig. 8.Figure 11 schemes in conjunction with the embodiments for the solid of a kind of light-emitting diode base structure 20 ' of the present invention.Figure 12 is along the cutaway view of E-E hatching line among Figure 11.Figure 13 is the figure in conjunction with the embodiments of a kind of light-emitting diode base structure of the present invention.
Present embodiment is a kind of base structure 20 of light-emitting diode, and it comprises: an insulating heat-conductive base material 21 and a functor 22.Insulating heat-conductive base material 21, its main application are the heat that light-emitting diode 11 produces to be derived apace and away from light-emitting diode 11.Because the heat that light-emitting diode 11 is produced is to conduct to insulating heat-conductive base material 21 junctions by its bottom surface, top by insulating heat-conductive base material 21 conducts to its below again, therefore the insulating heat-conductive base material can combine with other heat abstractors for 21 times again, to increase radiating effect.
The insulating heat-conductive base material 21 that present embodiment is selected for use, its material has good insulation performance, high heat-conduction coefficient, low-k and low thermal coefficient of expansion ... etc. characteristic.Because have the character of high heat-conduction coefficient,, also so structurally can have dimensional stability preferably so insulating heat-conductive base material 21 inside not only reach heat balance easily, and can not cause the concentrations of thermal stress.The coefficient of expansion of insulating heat-conductive base material 21 is approaching with the coefficient of expansion of light-emitting diode 11 wafers, because when the coefficient of expansion of the coefficient of expansion of insulating heat-conductive base material 21 and light-emitting diode 11 wafers near the time, can reduce insulating heat-conductive base material 21 transmits in the process of light-emitting diode 11 heat energy that produces, if and the coefficient of expansion of insulating heat-conductive base material 21 and light-emitting diode 11 wafers has big difference, then can make insulating heat-conductive base material 21 produce the possibility of deformation.
The insulating heat-conductive base material 21 of present embodiment, its thermal conduction characteristic is the coefficient of heat conduction of the heat conductivity of horizontal direction greater than vertical direction, therefore can make the heat-transfer rate of horizontal direction greater than the heat-transfer rate of vertical direction, so can with the heat energy on the insulating heat-conductive base material 21 apace horizontal conductive spread out, except the heat energy of avoiding light-emitting diode 11 to produce too concentrates on the single-point, also can increase the area of heat radiation, so can improve the usefulness that insulating heat-conductive base material 21 conducts heat.Insulating heat-conductive base material 21 spendable materials are for example an aluminium nitride (AlN), a carborundum (SiC) or borazon (BN) ... etc.
As shown in Figure 2, the upper surface at insulating heat-conductive base material 21 is coated with a first metal layer 213 and one second metal level 214.Wherein, the first metal layer 213 is with respect to the shape that forms a closure around the position that combines with functor 22, in order to combine with corresponding one the 3rd metal level in functor 22 bottom surfaces (figure does not show) along insulating heat-conductive base material 21.
As shown in Figure 7, also can earlier after the upper surface of insulating heat-conductive base material 21 plate second metal level 214, form an insulating part 215 again and be covered on the insulating heat-conductive base material 21.Second metal level 214 is a microscler metal level, and its two ends are to expose to functor 22, and the shape of insulating part 215 is corresponding with the shape of functor 22, with so that insulate between the 3rd metal level of functor 22 bottom surfaces and second metal level 214.If insulating heat-conductive base material 21 and functor 22 are with the soft soldering (soldering) or the mode combination of hard solder (brazing), then on insulating part 215, plate the first metal layer 213 again, and utilize the first metal layer 213 and the 3rd metal level solder bond.
By with the first metal layer 213 and the 3rd metal level solder bond, can reach prevent light-emitting diode base structure 20 when encapsulation, the excessive situation of packing colloid takes place, with the adaptation of the base structure 20 that increases light-emitting diode.The position of second metal level 214 is tops of being located at the perforation 211 of insulating heat-conductive base material 21.The first metal layer 213 and second metal level 214 all can use thin film technique or thick film technology to be made, and wherein thick film technology can be a back burning formula technology (postfired) or has burning technology (cofired) altogether.
As shown in Figures 3 and 4, one perforation 211 is set on insulating heat-conductive base material 21 at least, the position of perforation 211 is the positions with respect to second metal level 214, and in perforation 211, conductor 212 is set, conductor 212 is to electrically connect with second metal level 214, and light-emitting diode 11 can utilize the mode of routing 13 and second metal level 214 to electrically connect, and conductor 212 is connected with the outer electrode 23 of insulating heat-conductive base material 21 bottom surfaces again, make can be by outer electrode 23 via input currents such as the conductor 212 and the second metal level 214... with driven for emitting lights diode 11.Conductor 212 can be made by a metal cream.Conductor 212 can place perforation 211 with metal cream after perforation 211 settings are finished, processing is provided with the outer electrode 23 and second metal level 214 on insulating heat-conductive base material 21 again.Wherein, metal cream can be a silver paste.
Because can use surface adhering technology (Surface Mount Technology, SMT), utilize outer electrode 23 that many light-emitting diodes 11 are combined with circuit board, make circuit board can drive many light-emitting diodes 11 simultaneously, so as to be applied to throw light on or the module backlight of display on.
As shown in Figure 4, functor 22 is a circuit substrate 221.Circuit substrate 221 can be a printed circuit board (PCB) or a ceramic substrate, and it is a hollow plate body, is provided with a plurality of circuit structures 223 in the plate body.Circuit structure 223 with electrically connect with second metal level 214, whether and second metal level 214 can relend by routing 13 modes and light-emitting diode 11 electric connections, so can good by the light-emitting diode 11 after the circuit structure 223 direct test package.
As Fig. 5 and shown in Figure 6, conductor 212 also can be arranged at the outside of insulating heat-conductive base material 21, and then electrically connect with the circuit structure 223 of circuit substrate 221, so can reduce the processing procedure of insulating heat-conductive base material 21 perforation 211, so can reduce light-emitting diode base structure 20 cost of processing, also can make the setting of conductor 212 more convenient.
As shown in Figure 7, functor 22 is an optical reflection spare 222.The central authorities of optical reflection spare 222 are formed with the hollow bulb of one bowl of cup-shaped, in order to place light-emitting diode 11.The inwall of hollow bulb can obtain an optical reflection structure 224 by coating one silver medal reverberation, and optical reflection structure 224 is the light that sends in order to reflection light-emitting diode 11, and increases the luminous intensity of light-emitting diode 11 whereby.
As Fig. 8 and shown in Figure 9, optical reflection spare 222 has at least one opening or breach with respect to insulating heat-conductive base material 21, and at least one perforation 211 is to be arranged at the opening of optical reflection spare 222 or indentation, there, is provided with conductor 212 in perforation 211.Conductor 212 can be made by a metal cream.Conductor 212 can place perforation 211 with metal cream after perforation 211 settings are finished, because processing is provided with the outer electrode 23 and second metal level 214 on the insulating heat-conductive base material 21.Wherein, metal cream can be a silver paste.
Because the position of second metal level 214 is the positions that expose to hollow bulb and the opening or the breach of optical reflection spare 222, and the 211 interior conductor 212 and second metal levels 214 of boring a hole electrically connect, and light-emitting diode 11 can utilize the mode of routing 13 and second metal level 214 to electrically connect, and conductor 212 is connected with the outer electrode 23 of insulating heat-conductive base material 21 bottom surfaces again, so can be by outer electrode 23 via input currents such as the conductor 212 and the second metal level 214... with driven for emitting lights diode 11, and can use the surface adhering technology, utilize outer electrode 23 that many light-emitting diodes 11 are combined with circuit board, make circuit board can drive many light-emitting diodes 11 simultaneously, so as to be applied to throw light on or the module backlight of display on.
As shown in figure 10, the hollow bulb of optical reflection spare 222 and insulating heat-conductive base material 21 contacted positions can further form a vertical wall, make optical reflection spare 222 become a funnel-form.The setting of vertical wall, make and use ... wait optical cement material encapsulation LED 11 more convenient as silica gel or epoxy resin, and can use the optical cement material to fill up the part of the vertical wall of hollow bulb earlier, again phosphor powder is coated on the optical package glue material, to reach purpose, in order to the luminous efficiency of further raising light-emitting diode 11 with optical cement material and phosphor powder layering coating.
As Figure 11 and shown in Figure 12, conductor 212 also can be arranged at the outside of insulating heat-conductive base material 21, and then electrically connect with second metal level 214, so can reduce the processing procedure of insulating heat-conductive base material 21 perforation 211, and reduce light-emitting diode base structure 20 ' cost of processing, also can make the setting of conductor 212 more convenient.In the present embodiment, insulating heat-conductive base material 21 is to select the soft soldering (soldering) or the solder technology of hard solder (brazing) for use with functor 22 its combinations, can be the alloy material of one tin/antimony, a tin/lead, one gold medal/tin, a bronze medal/silver or one tin/silver/copper in conjunction with employed welding material again.
As shown in figure 13, insulating heat-conductive base material 21 can also be a co-sintering structure with functor 22, it is during fabrication, earlier insulating heat-conductive base material 21 is made for a ripe base, and functor 22 is green compact, again after the lower surface of the upper surface of insulating heat-conductive base material 21 and functor 22 is coated in conjunction with material 24 respectively, more further in addition co-sintering close, to form a co-sintering structure.Can be a glass 241 or a metal 242 in conjunction with material 24, wherein metal 242 is for example silver-colored.If insulating heat-conductive base material 21 needs to have conducting function with combining of functor 22 between the face of connecing, then use metal 242 conducts in conjunction with material 24, and, then use glass 241 conducts in conjunction with material 24 if need not have conducting function.
Therefore, when functor 22 is circuit substrate 221, can omit the setting of the first metal layer 213 and the 3rd metal level on the insulating heat-conductive base material 21, and the faying face of circuit structure 223 in second metal level 214 and circuit substrate 221, use metal 242 conducts in conjunction with material 24, and use glass 241 conducts in conjunction with material 24 at all the other faying faces that need not conduct electricity.And when functor 22 is optical reflection spare 222, also can omit the setting of the first metal layer 213 and the 3rd metal level on the insulating heat-conductive base material 21, and because need not have conducting function between the faying face of optical reflection spare 222 and insulating heat-conductive base material 21, so can only use glass 241 conducts in conjunction with material 24.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (12)
1, a kind of base structure of light-emitting diode in order to carry a light-emitting diode, is characterized in that it comprises:
One insulating heat-conductive base material; And
One functor, it is a hollow plate body, the bottom of this functor is to combine with this insulating heat-conductive base material.
2, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this insulating heat-conductive base material is an aluminium nitride base material.
3, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this insulating heat-conductive base material is a silicon carbide base material.
4, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this insulating heat-conductive base material is the borazon base material.
5, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this insulating heat-conductive base material is provided with at least one perforation, is provided with a conductor in each this perforation again.
6, the base structure of light-emitting diode according to claim 1 is characterized in that wherein at least one side of this insulating heat-conductive base material is provided with a conductor.
7, the base structure of light-emitting diode according to claim 1 is characterized in that wherein the structure of this insulating heat-conductive base material and this functor is a co-sintering structure.
8, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this functor is a circuit substrate.
9, the base structure of light-emitting diode according to claim 1 is characterized in that wherein this functor is an optical reflection spare, and its hollow bulb has an optical reflection structure.
10, the base structure of light-emitting diode according to claim 8 is characterized in that wherein this insulating heat-conductive base material and this circuit substrate are that welding material with one tin/antimony, a tin/lead, one gold medal/tin, a bronze medal/silver or one tin/silver/copper is a bond material.
11, the base structure of light-emitting diode according to claim 8 is characterized in that wherein this circuit substrate is a printed circuit board (PCB).
12, the base structure of light-emitting diode according to claim 8 is characterized in that wherein this circuit substrate is a ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101234425A CN101320769A (en) | 2007-06-22 | 2007-06-22 | Seat body structure of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101234425A CN101320769A (en) | 2007-06-22 | 2007-06-22 | Seat body structure of light emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101320769A true CN101320769A (en) | 2008-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101234425A Pending CN101320769A (en) | 2007-06-22 | 2007-06-22 | Seat body structure of light emitting diode |
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| CN (1) | CN101320769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108140125A (en) * | 2015-09-15 | 2018-06-08 | 上海箩箕技术有限公司 | Optical finger print imaging system and area array sensor |
-
2007
- 2007-06-22 CN CNA2007101234425A patent/CN101320769A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108140125A (en) * | 2015-09-15 | 2018-06-08 | 上海箩箕技术有限公司 | Optical finger print imaging system and area array sensor |
| CN108140125B (en) * | 2015-09-15 | 2021-11-02 | 上海箩箕技术有限公司 | Optical fingerprint imaging system and area array sensor |
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