CN101179046A - Silicon chip shallow plow groove isolation etching method - Google Patents
Silicon chip shallow plow groove isolation etching method Download PDFInfo
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Abstract
The invention discloses a silicon chip shallow trench isolation etching method which is used for etch groove on silicon. The method comprises the following steps: A. upper layer silicon etching step; B. oxide layer etching step, which is used for etching the oxide layer between upper layer silicon and base silicon and is also used for etching partial base silicon for the top fillet etching preparation; C. base silicon etching step which is used for etching groove on silicon base and to form slippery top fillet at the junctional position of oxide layer and silicon base on the sidewall of groove. The etching process gas used in the Step B is mixed gas consisting of HBr gas and CHF3 gas. The etching process gas is ionized into active groups like Br*, CHF*, etc., and can form the top fillet during Step C. The method has the advantages of simple process with less steps, low cost and slippery top fillet formation of etching groove, and is applicable to shallow trench isolation etching and other etchings of various type of semiconductor silicon wafers.
Description
Technical field
The present invention relates to a kind of semiconductor silicon machining process, relate in particular to a kind of separate etching silicon chip shallow plow groove technology.
Background technology
At present, microelectric technique has entered very lagre scale integrated circuit (VLSIC) and system integration epoch, and microelectric technique has become sign and the basis of whole information age.
In the microelectric technique, make an integrated circuit, need through several procedures such as integrated circuit (IC) design, mask plate manufacturing, original material manufacturing, chip manufacture, encapsulation, tests.In this process, semi-conductor silicon chip is carried out etching, form the technology groove, be crucial technology.
Semi-conductor silicon chip is generally sandwich construction, comprise silicon upper strata, silicon base layer, the silicon upper strata here mainly comprises SiON (hardmask) layer, SiN layer, be provided with the SiO2 oxide layer between silicon upper strata and the silicon base layer, semi-conductor silicon chip is being carried out in the process of shallow groove isolation etching, need be on the sidewall of groove, the position that SiO2 layer and silicon base layer have a common boundary forms slick and sly top fillet, so that help the release of stress, avoid producing in the semi-conductor silicon chip parasitic conductive channel; Also need form slick and sly bottom fillet, so that provide convenience for the filling of next step oxide at the sidewall of groove and the corner between the diapire.Realize that high-quality top fillet and bottom fillet are the important indicators of weighing shallow groove isolation etching technology quality.
In the shallow groove isolation etching technology of the prior art, mainly comprise following processing step:
The photoetching step: form the PR (photoresistance) that etching is used;
The silicon upper strata etching step (HM open): etching is carried out on the silicon upper strata, and adopting fluoro-gas is etching technics gas, as CF4, CHF3 etc.;
The SiO2 layer etching step (BT): open oxide layer, and carry out the etching of part silicon, for top fillet etching is prepared;
The top fillet etching step (TCR:Top Corner Rounding): the etching of carrying out the top fillet;
The etching groove step (etching of trenth): carry out the shallow trench etching and form the bottom fillet, mainly adopting the mist of Cl2, HBr, CF4, HeO etc. is etching technics gas;
Above-mentioned shallow trench isolation from etching process in, crucial processing step is how to form good top fillet, and is slick and sly and can not cause electric discharge phenomena without any the top fillet of wedge angle in semiconductor device, to guarantee good electric property.
Generally adopting CH2F2 gas in the processing step in SiO2 layer etching step in the prior art is etching technics gas, carries out the etching of SiO2 oxide layer and a little silicon, and prepares for next step top fillet etch step.
But the shortcoming of this kind technology is, the CH2F2 gas price that the SiO2 layer etching step uses is higher, and the vent gas treatment process is complicated, needs special device, thereby makes client's consumptive use cost increase; In addition because comprise the top fillet etching step, various, the complex process of step has reduced the production capacity of equipment.
Summary of the invention
The purpose of this invention is to provide that a kind of etching technics is simple, step is few, cost is low, the method for the separate etching silicon chip shallow plow groove of the top fillet of the etching groove of formation.
The objective of the invention is to be achieved through the following technical solutions:
The method of separate etching silicon chip shallow plow groove of the present invention is used for etching groove on silicon chip, and described silicon chip is a sandwich construction, comprises silicon upper strata, silicon base layer, is provided with oxide layer between silicon upper strata and the silicon base layer, comprises step:
A, silicon upper strata etching step, be used for silicon upper strata etching groove;
B, oxide layer etching step, be used for the etching oxidation layer, and carry out the etching of part silicon base layer, for top fillet etching is prepared;
C, silicon base layer etching step are used for the silicon base layer etching groove, and on the sidewall of groove, the position that oxide layer and silicon base layer have a common boundary forms slick and sly top fillet.
The etching technics gas that is adopted among the described step B is the mist that comprises HBr and CHF3 gas.
Described HBr and CHF3 gas charge into reaction chamber according to flow and the pressure that etch process requires; and under the effect of radio-frequency power supply; the mist that charges into reaction chamber is ionized into plasma; described reaction chamber is equipped with silicon chip; etching technics to silicon chip is finished in reaction chamber; active group in the described plasma mixes the polymer aggregational of generation on the sidewall of groove; and the sidewall to groove plays a protective role in the process of carrying out described step C, forms the top fillet in the position of oxide layer and silicon base layer boundary.
Described active group comprises Br*, CHF*.
The gas supply flow of CHF3 is 30～50sccm in the etching process, and the gas supply flow of HBr is 15～40sccm, and supply gas pressure is 10～30mT, and etch period is 20～50s.
The gas supply flow of CHF3 is 35～45sccm in the etching process, and the gas supply flow of HBr is 20～35sccm, and supply gas pressure is 15～25mT, and etch period is 30～40s.
The gas supply flow of CHF3 is 40sccm in the etching process, and the gas supply flow of HBr is 30sccm, and supply gas pressure is 20mT, and etch period is 35s.
Described radio-frequency power supply comprises radio-frequency power supply and following radio-frequency power supply, and the power output that goes up radio-frequency power supply in the etching process is 400～600W, and the power output of following radio frequency source is 30～60W.
The power output that goes up radio-frequency power supply in the etching process is 500W, and the power output of following radio frequency source is 45W.
As seen from the above technical solution provided by the invention, the method of separate etching silicon chip shallow plow groove of the present invention, owing to comprise silicon upper strata etching step, silicon base layer etching step, silicon base layer etching step, in to the silicon base layer etching groove, form the top fillet, technology is simple, step is few, cost is low, the top fillet slyness of the etching groove of formation.
Again because the etching technics gas that is adopted in the step in the oxide layer etching is the mist that comprises CHF3 and HBr gas, can form slick and sly top fillet in the etching process, saved the top fillet etching step, not only simplified processing step, make level and smooth transition between silicon upper strata sidewall and the silicon base layer sidewall, and, reduced cost because the CHF3 price is more cheap.
Be applicable to various types of semi-conductor silicon chips are carried out shallow groove isolation etching or other etching.
Description of drawings
Fig. 1 is the silicon chip structural representation before the etching;
Fig. 2 is in the method for separate etching silicon chip shallow plow groove of the present invention, the cross-sectional view of the polymer that the oxide layer etching deposited on the sidewall of groove in the step;
Fig. 3 is in the method for separate etching silicon chip shallow plow groove of the present invention, during oxide layer etching EOS, and the cross-sectional view of the groove of institute's etching;
Fig. 4 is in the method for separate etching silicon chip shallow plow groove of the present invention, when etching process is all over, and the cross-sectional view of the groove of institute's etching.
Embodiment
The method of separate etching silicon chip shallow plow groove of the present invention is mainly used in etching groove on silicon chip, as shown in Figure 1, described silicon chip is a sandwich construction, comprise the silicon upper strata, silicon base layer, be provided with oxide layer between silicon upper strata and the silicon base layer, the silicon upper strata here mainly comprises SiON (hardmask) layer, the SiN layer, be provided with the SiO2 oxide layer between silicon upper strata and the silicon base layer, semi-conductor silicon chip is being carried out in the process of shallow groove isolation etching, need be on the sidewall of groove, the position that SiO2 layer and silicon base layer have a common boundary forms slick and sly top fillet, so that help the release of stress, avoids producing in the semi-conductor silicon chip parasitic conductive channel.
The method of separate etching silicon chip shallow plow groove of the present invention as shown in Figure 3, comprises
Step 31, the silicon upper strata etching step is used for silicon upper strata etching groove, etching SiON (hardmask) layer, and the SiN layer carried out etching;
Step 32, SiO2 oxide layer etching step, be used for the etching oxidation layer, and carry out the etching of part Si silicon base layer, for top fillet etching is prepared.
As shown in Figure 2, when carrying out this step, for can be on the sidewall of groove when carrying out next step, the position that SiO2 layer and silicon base layer have a common boundary forms slick and sly top fillet, after the step 32, need obtain taper profile preferably on the sidewall of groove.That just needs the deposition of number of polymers, just can form top fillet preferably like this in ensuing etch step under isoionic bombardment.
As shown in Figure 4, carry out after the step 32
Step 41, silicon base layer etching step are used for Si silicon base layer etching groove, and on the sidewall of groove, the position that oxide layer and silicon base layer have a common boundary forms slick and sly top fillet.When carrying out this step, because in the step 32, polymer deposition has gone out taper profile preferably on the sidewall of groove, like this in the etch step in this step under isoionic bombardment, just can on the sidewall of groove, form top fillet preferably when carrying out etching groove.
The etching technics gas that is adopted in above-mentioned step 32 is the mist that comprises HBr and CHF3 gas.
Described HBr and CHF3 gas charge into reaction chamber according to ratio, flow and the pressure that etch process requires; and under the effect of radio-frequency power supply; the mist that charges into reaction chamber is ionized into plasma; described reaction chamber is equipped with silicon chip; etching technics to silicon chip is finished in reaction chamber; active group in the described plasma mixes the polymer aggregational of generation on the sidewall of groove; and the sidewall to groove plays a protective role in the process of carrying out described step 41, forms the top fillet in the position of oxide layer and silicon base layer boundary.Described active group comprises Br*, CHF* etc.
The gas supply flow of CHF3 is 30～50sccm in the etching process of step 32, can be 30,35,40,45, preferred flow such as 50sccm, preferably is 35～45sccm, and the best is 40sccm.
The gas supply flow of HBr is 15～40sccm, can be 15,20,25,30,35, preferred flow such as 40sccm, preferably is 20～35sccm, and the best is 30sccm.
The supply gas pressure of HBr and CHF3 gas is 10～30mT, can be for 10,15,20,25, preferred pressure such as 30mT, be preferably 15～25mT, and the best is 20mT.
The etch period of step 32 is 20～50s, can be for 20,25,30,35,40,45, the preferred time such as 50s, be preferably 30～40s, and the best is 35s.
Above-mentioned radio-frequency power supply comprises radio-frequency power supply and following radio-frequency power supply, and the power output that goes up radio-frequency power supply in the etching process is 400～600W, is preferably 500W, and the power output of following radio frequency source is 30～60W, is preferably 45W.
The present invention is the mist that comprises CHF3 and HBr gas at the etching technics gas that the oxide layer etching was adopted in the step, can form slick and sly top fillet in the etching process, saved the top fillet etching step, not only simplified processing step, make level and smooth transition between silicon upper strata sidewall and the silicon base layer sidewall, and, reduced cost because the CHF3 price is more cheap.
Be applicable to various types of semi-conductor silicon chips are carried out various etchings, be particularly useful for semi-conductor silicon chip is carried out shallow groove isolation etching.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (9)
1. the method for a separate etching silicon chip shallow plow groove is used for etching groove on silicon chip, and described silicon chip is a sandwich construction, comprises silicon upper strata, silicon base layer, is provided with oxide layer between silicon upper strata and the silicon base layer, it is characterized in that, comprises step:
A, silicon upper strata etching step, be used for silicon upper strata etching groove;
B, oxide layer etching step, be used for the etching oxidation layer, and carry out the etching of part silicon base layer, for top fillet etching is prepared;
C, silicon base layer etching step are used for the silicon base layer etching groove, and on the sidewall of groove, the position that oxide layer and silicon base layer have a common boundary forms slick and sly top fillet.
2. the method for separate etching silicon chip shallow plow groove according to claim 1 is characterized in that, the etching technics gas that is adopted among the described step B is the mist that comprises HBr and CHF3 gas.
3. the method for separate etching silicon chip shallow plow groove according to claim 2; it is characterized in that; described HBr and CHF3 gas charge into reaction chamber according to flow and the pressure that etch process requires; and under the effect of radio-frequency power supply; the mist that charges into reaction chamber is ionized into plasma; described reaction chamber is equipped with silicon chip; etching technics to silicon chip is finished in reaction chamber; active group in the described plasma mixes the polymer aggregational of generation on the sidewall of groove; and the sidewall to groove plays a protective role in the process of carrying out described step C, forms the top fillet in the position of oxide layer and silicon base layer boundary.
4. the method for separate etching silicon chip shallow plow groove according to claim 3 is characterized in that, described active group comprises Br*, CHF*.
5. the method for separate etching silicon chip shallow plow groove according to claim 3 is characterized in that, the gas supply flow of CHF3 is 30～50sccm in the etching process, and the gas supply flow of HBr is 15～40sccm, and supply gas pressure is 10～30mT, and etch period is 20～50s.
6. the method for separate etching silicon chip shallow plow groove according to claim 5 is characterized in that, the gas supply flow of CHF3 is 35～45sccm in the etching process, and the gas supply flow of HBr is 20～35sccm, and supply gas pressure is 15～25mT, and etch period is 30～40s.
7. the method for separate etching silicon chip shallow plow groove according to claim 6 is characterized in that, the gas supply flow of CHF3 is 40sccm in the etching process, and the gas supply flow of HBr is 30sccm, and supply gas pressure is 20mT, and etch period is 35s.
8. the method for separate etching silicon chip shallow plow groove according to claim 3, it is characterized in that, described radio-frequency power supply comprises radio-frequency power supply and following radio-frequency power supply, and the power output that goes up radio-frequency power supply in the etching process is 400～600W, and the power output of following radio frequency source is 30～60W.
9. the method for separate etching silicon chip shallow plow groove according to claim 8 is characterized in that, the power output that goes up radio-frequency power supply in the etching process is 500W, and the power output of following radio frequency source is 45W.
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