CN101083304A - Method for preparing anisotropic organic field effect tube through thermal pressure - Google Patents
Method for preparing anisotropic organic field effect tube through thermal pressure Download PDFInfo
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- CN101083304A CN101083304A CN 200610083332 CN200610083332A CN101083304A CN 101083304 A CN101083304 A CN 101083304A CN 200610083332 CN200610083332 CN 200610083332 CN 200610083332 A CN200610083332 A CN 200610083332A CN 101083304 A CN101083304 A CN 101083304A
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Abstract
The invention belongs to the micro machining field in organic semiconductor physics, especially relating to a method for preparing anisotropic organic field effect transistor, comprising the steps of: 1. preparing insulating medium layer on conductive substrate; 2. vapor-depositing first layer of organic semiconductor film on the surface of the insulating medium layer; 3. using smooth roller to roll-pressurize the organic film at high temperature; 4. vapor-depositing second layer of homogenous organic film; 5. deposit-growing source-drain metal electrode by hollow mask and completing preparation of anisotropic organic filed effect transistor.
Description
Technical field
The invention belongs to the micro processing field in organic semiconductor, particularly a kind of method for preparing the anisotropy organic field-effect tube by hot pressing.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.The mobility that improves organic field-effect tube is the target that pursue in this field always.In studying process how to improve the organic transistor performance, new features have been it is found that, be exactly the anisotropy of carrier mobility, i.e. the mobility of mobility when the orientation of carrier transport direction and thin-film material parallels when orthogonal.The method for preparing at present the anisotropy organic field-effect tube mainly is to pass through the organic material of the coated last layer of method of wiping in a certain direction as inducer on dielectric layer, and the deposition growing organic semiconducting materials forms anisotropic film then.This method controllability is low, and is repeatable poor, and film performance is inhomogeneous and introduce impurity easily.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing the anisotropy organic field-effect tube by hot pressing, first hydatogenesis ground floor organic semiconducting materials on the dielectric layer substrate, utilize smooth stainless steel roller to the organic film pressurization of at high temperature rolling then, change its pattern and architectural feature, its crystal grain along rotating direction is elongated; Hydatogenesis second layer organic semiconducting materials again, owing to be subjected to the influence of ground floor organic substance orientationization pattern, second layer organic semiconducting materials can form anisotropic film, the mobility of raising device.Then the plated metal source-drain electrode is finished the preparation of anisotropic organic field effect tube.
A kind ofly prepare the method for anisotropy organic field-effect tube by hot pressing, its processing step is as follows: 1, prepare insulating medium layer on conductive substrates; 2, hydatogenesis ground floor organic semiconductor thin-film on the insulating medium layer film surface; 3, utilize smooth roller to the organic film pressurization of at high temperature rolling; 4, hydatogenesis second layer homogeneity organic thin film on ground floor organic film surface; 5, leak metal electrode by hollow mask deposition growing source, finish the preparation of anisotropy organic field-effect tube.
Describedly prepare the method for anisotropy organic field-effect tube by hot pressing, the deposition of wherein said organic film adopts the vacuum thermal evaporation technology, its objective is the orderly continuous organic semiconductor thin-film that grows big crystal grain on dielectric layer.
The described method for preparing the anisotropy organic field-effect tube by hot pressing, organic semiconductor thin-film one is total two-layer, wherein the ground floor film is after vacuum moulding machine, utilize smooth roller to its pressurization of at high temperature rolling, purpose is structure and the shape characteristic that changes organic film, its crystal grain along rotating direction is elongated, form anisotropic film, film becomes fine and close more under the acting in conjunction of high temperature and pressure simultaneously, second layer organic material forms anisotropic semiconductive thin film on the ground floor organic film surface of vacuum moulding machine after the hot pressing.
Describedly prepare the method for anisotropy organic field-effect tube by hot pressing, it is to adopt evaporation of metal or magnetron sputtering technique deposition that metal electrode is leaked in wherein said source.
Characteristics of the present invention are first hydatogenesis ground floor organic semiconducting materials on the insulating medium layer of conductive substrates, utilize smooth stainless steel roller to the organic film pressurization of at high temperature rolling then, hydatogenesis second layer homogeneity organic semiconducting materials again, owing to be subjected to the influence of ground floor organic substance orientationization pattern, second layer organic semiconducting materials can form anisotropic film, improves the mobility of device.The invention provides the method that a kind of technology simply prepares the anisotropy organic field-effect tube of high mobility.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description, wherein,
Fig. 1-1 is to Fig. 1-the 7th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 7th, the flow chart of the invention process example.
Embodiment
The flow chart (section in the flow chart is the A-A section among Fig. 1-7) of invention:
1, as Figure 1-1, adopt the technology of thermal oxide growth or the technology of chemical vapour deposition (CVD) to prepare the dielectric layer film in surface of silicon.
2, shown in Fig. 1-2, at insulating medium layer surface vacuum deposition ground floor organic semiconductor thin-film.
3, as Figure 1-3, utilize smooth roller to the organic film pressurization of at high temperature rolling.
4, shown in Fig. 1-4, deposition second layer homogeneity organic film on the process ground floor organic film surface of hot-pressing processing.Owing to inducing of the orientation figure that is subjected to the ground floor film surface, second layer organic semiconducting materials forms the anisotropic film shown in Fig. 1-5 according to specific oriented growth.
5, shown in Fig. 1-6, at organic semiconductor thin-film surface deposition metal electrode, with organic conductive layers, insulating medium layer and low-resistance back grid constitute organic field-effect tube together by hollow mask plate.Vertical view is shown in Fig. 1-7.
Examples of implementation flow process (section in the flow chart is the B-B section among Fig. 2-7):
1, shown in Fig. 2-1, adopt the technology of thermal oxide growth to prepare the silica dioxide medium layer film in surface of silicon.
2, shown in Fig. 2-2, at silica dioxide medium laminar surface vacuum moulding machine ground floor pentacene organic semiconductor thin-film.
3, shown in Fig. 2-3, utilize smooth roller to the pressurization of at high temperature rolling of pentacene organic film.
4, shown in Fig. 2-4, deposition second layer pentacene organic film on the process ground floor pentacene organic film surface of hot-pressing processing.Owing to inducing of the orientation pattern that is subjected to the ground floor film, second layer pentacene body material forms the anisotropic film shown in Fig. 2-5 according to specific oriented growth.
5, shown in Fig. 2-6, at organic semiconductor thin-film surface deposition source-drain electrode, with organic conductive layers, dielectric layer and low-resistance silicon back grid constitute organic field-effect tube together by hollow mask plate.Vertical view is shown in Fig. 2-7.
Claims (7)
1, a kind of method by each anisotropy organic field-effect tube of hot pressing system, it is characterized in that, first hydatogenesis ground floor organic semiconducting materials on the dielectric layer substrate, utilize smooth stainless steel roller to the organic film pressurization of at high temperature rolling then, change its pattern and architectural feature, its crystal grain along rotating direction is elongated; Hydatogenesis second layer organic semiconducting materials again, owing to be subjected to the influence of ground floor organic substance orientationization pattern, second layer organic semiconducting materials can form anisotropic film, improve the mobility of device, then the plated metal source-drain electrode is finished the preparation of anisotropic organic field effect tube.
2, according to claim 1ly prepare the method for anisotropy organic field-effect tube by hot pressing, be by the primary insulation dielectric deposition, twice organic semiconductor thin-film deposition, a hot pressing and a metal deposition obtain anisotropic organic field-effect tube, it is characterized in that its step is as follows:
Step 1, on conductive substrates, prepare insulating medium layer;
Step 2, on the insulating medium layer film surface hydatogenesis growth regulation one deck organic semiconductor thin-film;
Step 3, utilize smooth roller to the organic film pressurization of at high temperature rolling;
Step 4, on ground floor organic film surface hydatogenesis growth second layer homogeneity organic thin film;
Step 5, leak metal electrode, finish the preparation of anisotropy organic field-effect tube by hollow mask deposition growing source.
3, according to claim 1 and 2ly prepare the method for anisotropy organic field-effect tube by hot pressing, it is characterized in that wherein said conductive substrate is the electric conducting material of low-resistivity, its objective is grid as organic field-effect tube.
4, the method for preparing the anisotropy organic field-effect tube by hot pressing according to claim 1 and 2, it is characterized in that, wherein said on the conductive substrate surface dielectric layer film of deposit be to adopt the method for thermal oxide growth or chemical vapour deposition (CVD) to obtain.
5, the method for preparing the anisotropy organic field-effect tube by hot pressing according to claim 1 and 2, it is characterized in that the deposition of wherein said organic film adopts the vacuum thermal evaporation technology, its objective is the orderly continuous organic semiconductor thin-film that grows big crystal grain on dielectric layer.
6, the method for preparing the anisotropy organic field-effect tube by hot pressing according to claim 1 and 2, it is characterized in that, organic semiconductor thin-film one is total two-layer, wherein the ground floor film is after vacuum moulding machine, utilize smooth roller to its pressurization of at high temperature rolling, purpose is structure and the shape characteristic that changes organic film, its crystal grain along rotating direction is elongated, form anisotropic film, simultaneously film becomes fine and close more under the acting in conjunction of high temperature and pressure, and second layer organic material forms anisotropic semiconductive thin film on the ground floor organic film surface of vacuum moulding machine after the hot pressing.
7, according to claim 1 and 2ly prepare the method for anisotropy organic field-effect tube by hot pressing, it is characterized in that it is to adopt evaporation of metal or magnetron sputtering technique deposition that metal electrode is leaked in wherein said source.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200610083332 CN101083304A (en) | 2006-06-02 | 2006-06-02 | Method for preparing anisotropic organic field effect tube through thermal pressure |
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| CN 200610083332 CN101083304A (en) | 2006-06-02 | 2006-06-02 | Method for preparing anisotropic organic field effect tube through thermal pressure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319145A (en) * | 2010-07-27 | 2012-01-18 | 江苏畅微电子科技有限公司 | Method for preparing contact lens electronic chip |
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2006
- 2006-06-02 CN CN 200610083332 patent/CN101083304A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319145A (en) * | 2010-07-27 | 2012-01-18 | 江苏畅微电子科技有限公司 | Method for preparing contact lens electronic chip |
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