CN100375236C - Method of forming separable interface and producing micro-electromechanical film with the method - Google Patents
Method of forming separable interface and producing micro-electromechanical film with the method Download PDFInfo
- Publication number
- CN100375236C CN100375236C CNB2005101258647A CN200510125864A CN100375236C CN 100375236 C CN100375236 C CN 100375236C CN B2005101258647 A CNB2005101258647 A CN B2005101258647A CN 200510125864 A CN200510125864 A CN 200510125864A CN 100375236 C CN100375236 C CN 100375236C
- Authority
- CN
- China
- Prior art keywords
- micro
- processing procedure
- electromechanical
- electromechanical film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The present invention relates to a method for forming a detachable interface in the process of semiconductor preparation or micro-electromechanical preparation. Materials or preparation with bad connection or materials which can be easily removed by etching are arranged between a preparation base and the layers of integrated circuit elements or the layers of micro-electromechanical elements to form a detachable interface which can be damaged by external force, so that the integrated circuit elements or the micro-electromechanical elements can be separated from the preparation base by damaging the detachable interface in the subsequent preparation of the integrated circuit elements or the micro-electromechanical elements. Particularly, a micro-electromechanical film made by the detachable interface does not have a preparation base and has flexibility, and both the upper and the lower surfaces of the micro-electromechanical film can be made into surfaces with circuit connection points, micro-structures or micro electromechanical elements. Compared with the traditional structure that a micro-electromechanical film has to coexist with a preparation base, the micro-electromechanical film with no preparation base and with flexibility has higher value of practical application.
Description
Technical field
The present invention relates to a kind of method that in manufacture of semiconductor or micro electronmechanical processing procedure, forms separable interface, be particularly useful for making the micro-electromechanical film goods of not being with the processing procedure substrate and having flexibility.
Background technology
Conventional semiconductor silicon wafer process technology, the technology that promptly refers to make various integrated circuits on silicon comprises technology such as gold-tinted, etching, plating, film, cmp and ion injection, all is existing professional techniques of silicon wafer process.For example, yellow photolithographic techniques is used for doing image transfer, and electroplating technology is used for plated metal, and the ion dry ecthing is used for doing non-with tropism's etching, and the chemical wet characteristic is used in the multidirectional etching, and film has metallic film and nonmetal film growth and coating etc.
Briefly, manufacture of semiconductor utilizes various micro image transfer techniques exactly and cooperates various physics and chemical technologies such as various etchings, film growth and coating, plating, the technology that metal and nonmetallic materials are processed on a substrate.After manufacture of semiconductor finishes, again integrated circuit or the element of making cut down with substrate, to carry out other assembling.
And, utilize manufacture of semiconductor in recent years the various micro-electromechanical technologies that develop out, can be on the processing procedure substrate make various micromechanicss and microcomputer electric components such as various micro-structurals, sensing element, photoelectric cell with small process technology, but except few micro-structural partly can independently be taken off, other microcomputer electric component all must cut down with the processing procedure substrate and carry out processing procedures such as other encapsulation, test again.
Yet integrated circuit component or microcomputer electric component and the simultaneous structure of processing procedure substrate have many shortcomings, comprising:
One, as shown in Figure 1, processing procedure substrate 10 occupies the volume of whole element 60 up to more than 80%, makes to grind the processing procedure substrate 10 of the element 60 made;
Two, element 60 can only carry out circuit connection or assembling on single face, can not be at two-sided while design circuit, and this structure easily has influence on the design and the function of element 60.
For example, be example, in encapsulation or assembling process, must make the single surface of pressure sensing element to contact, otherwise will influence the sensitivity of pressure sensing element with environment with the pressure sensing element that uses micro electronmechanical capacitance structure to make.Perhaps, as shown in Figure 2, be example with CMOS sensing element 70 with photoelectric cell, in encapsulation procedure, must avoid covering sensing cell.Perhaps, as shown in Figure 3, the CMOS sensing element 70 that has photoelectric cell with another kind is an example, and this CMOS sensing element 70 must use the base plate for packaging 75 of printing opacity.
Summary of the invention
Therefore, the objective of the invention is to disclose a kind of method that in processing procedure, forms separable interface, can be applicable in manufacture of semiconductor or the micro electronmechanical processing procedure, make made integrated circuit component or microcomputer electric component not be with the processing procedure substrate.This method is to impose various separable interfaces between layer and the layer of processing procedure substrate in manufacture of semiconductor or micro electronmechanical processing procedure and integrated circuit component or microcomputer electric component to handle, and makes can separate the purpose that described separable interface separates with the processing procedure substrate with realization integrated circuit component or microcomputer electric component by external force in the successive process.
Another object of the present invention is to disclose and a kind ofly utilize and in processing procedure, form separable interface, make made micro-electromechanical film can break away from the restriction of processing procedure substrate, and have flexibility not with processing procedure substrate and micro-electromechanical film with flexibility.The upper and lower surface of this micro-electromechanical film all can be made into electronic circuit, micro-structural and various microcomputer electric component, and actual application value is widely arranged.
Description of drawings
Fig. 1 is that existing integrated circuits element or microcomputer electric component must exist simultaneously with the processing procedure substrate, and the ratio that the processing procedure substrate occupies whole element surpasses 80% schematic diagram.
Fig. 2 is CMOS sensing element with photoelectric cell must avoid covering sensing cell when encapsulation a schematic diagram.
Fig. 3 is the schematic diagram that CMOS sensing element with photoelectric cell uses the base plate for packaging of printing opacity.
Fig. 4 is that the present invention utilizes the schematic diagram of then spending the embodiment of not good material separable interface.
Fig. 5 is that the present invention utilizes the not good processing procedure of conjugation grade to make the schematic diagram of the embodiment of separable interface.
Fig. 6 is that the present invention utilizes and adds the schematic diagram that material that one deck easily removes is made the embodiment of separable interface.
Fig. 7 is the flow chart that the formation method of separable interface shown in the present is applied to make various micro-electromechanical films.
Fig. 8 is that the formation method of using separable interface shown in the present is made not with the processing procedure substrate and had the schematic diagram of embodiment of the micro-electromechanical film of flexibility.
Fig. 9 is the not coplanar that circuit junction and micro-structural can be produced in micro-electromechanical film, and wherein forming circuit of micro-electromechanical film can not have influence on the schematic diagram of the micro-structural function of another side when being communicated with.
Figure 10 uses the schematic diagram that micro-electromechanical film that the formation method of separable interface shown in the present makes must remove substrate again after assembling is finished.
The main element symbol description:
10... substrate 15... ceramic bases
20... thin- film component 21,22,24... micro electromechanical structure
23... circuit junction 30... separable interface
31... tungsten metal level 32... nickel metal layer
33,34... policapram 35... copper metal layer
36... etching mouth 37... etching resistance cover
40... knife edge 50... circuit board
52... circuit junction 60... element
70... sensing element 75... base plate for packaging
Embodiment
The method that forms separable interface in manufacture of semiconductor or micro electronmechanical processing procedure disclosed in this invention has two kinds: first method is to utilize the then degree of the joint interface between key-course and the layer, makes between layer and the layer to constitute separable interface; Second method then adds the material that easily removes between layer and layer, thus the separable interface between cambium layer and the layer.
Wherein, utilize the low of joint interface between key-course and the layer then to spend and the method for formation separable interface, promptly be to utilize then not good material or the processing procedure of degree, or in conjunction with then spending not good material and processing procedure, control the power of the adhesion of joint interface, make joint interface between the adjacent two layers quite weak but be enough to finish all processing procedures.
The present invention used, and then the not good material category of degree is numerous, for example, and pottery and tungsten, tungsten and copper, tungsten and nickel etc.In addition, the internal stress of compounding ingredient itself also can make the easier separation of joint interface, for example, after the sputter copper of tungsten surface, again with plating mode at the copper electroplating nickel on surface, because thick more its internal stress of thickness of nickel is big more, therefore, electroplate when blocked up when nickel, the interface of tungsten and copper will be easy to peel off.
In addition, the not good processing procedure of the conjugation grade that the present invention used is also a lot, for example, in the joint situation of tungsten electroplating nickel on surface than poorer with physically splash plating nickel; Perhaps, form caducous oxide layer at tungsten or copper surface; Perhaps, can be coated with solid in advance usually when coating policapram (PI), then conjugation grade can be relatively poor if do not add solid, and the roasting condition of cure of the heat of policapram also can influence its property followed.
Fig. 4 is that the present invention utilizes the schematic diagram of then spending the embodiment of not good material separable interface.At first carry out step 4a, in substrate 10, make the thick tungsten metal level 31 of one 0.5 μ m, make the thick nickel metal layer 32 of one 0.5 μ m with sputtering way then, with plating mode nickel metal layer 32 is thickened about 20～50 μ m again.
At this moment, form a separable interface 30 between tungsten metal level 31 and the nickel metal layer 32; Carry out step 4b then, on nickel metal layer 32, make thin-film component 20 with circuit or micro electromechanical structure 21; Behind completing steps 4b, carry out step 4c and step 4d successively, promptly in substrate 10 exterior lateral area with outside destroy separable interface 30 with take off thin-film component 20.For example, streaks between tungsten metal level 31 and the nickel metal layer 32 with the knife edge 40 and just can destroy separable interface 30, and an end of separable interface 30 is in a single day destroyed, if more slightly upwards the application of force just can take off thin-film component 20 easily.
Fig. 5 is that the present invention utilizes the not good processing procedure of conjugation grade to make the schematic diagram of the embodiment of separable interface.At first carry out step 5a, on substrate 10, be coated with two- layer policapram 33 and 34 continuously, and when coating ground floor policapram 33, add solid, and control heat is baked curing time under the roasting curing temperature of suitable heat, for example: under 120 ℃, 180 ℃ and 240 ℃ of the roasting curing temperatures of heat, heat is roasting 3.5 minutes respectively, but 34 of coating second layer policaprams do not add solid, control heat is baked curing time under the roasting curing temperature of suitable heat equally, for example: under 120 ℃, 180 ℃ and 240 ℃ of the roasting curing temperatures of heat, heat is roasting 3.5 minutes respectively.
At this moment, between ground floor policapram 33 and second layer policapram 34, just form a separable interface 30.Carry out step 5b then, on second layer policapram 34, make thin-film component 20 with circuit or micro electromechanical structure 21.Behind completing steps 5b, then carry out step 5c and step 5d, promptly in substrate 10 exterior lateral area with outside destroy separable interface 30 with take off thin-film component 20, for example, streak between ground floor policapram 33 and the second layer policapram 34 with the knife edge 40 and just can destroy separable interface 30, and an end of separable interface 30 is in a single day destroyed, and slightly upwards the application of force just can be taken off thin-film component 20 easily again.
In addition, in first kind of separable interface technology shown in the present, can make separable interface in conjunction with then spending not good material and processing procedure simultaneously.For example, at first on substrate, make the thick tungsten metal level of one 0.5 μ m, it is inserted contain 15%H then
2O
2Solution in 5 minutes, make its surface form oxide layer, then make the thick copper metal layer of a 0.5um, again with about 20～50 μ m of plating mode electronickelling metal level with sputtering way.At this moment, between copper metal layer and tungsten metal level, just form a separable interface.
Another kind shown in the present forms the method for separable interface, be between layer and layer, to add the material that easy etched material maybe can go bad, for example between layer and layer, add the polymer that a kind of easy etched copper maybe can go bad, and utilize etching mode to remove easy etched material, or utilize alternate manner, for example heating or illumination makes the then characteristic disappearance of the material that can go bad or forms segregative unstable composition surface.
Fig. 6 is that the present invention utilizes and adds the schematic diagram that material that one deck easily removes is made the embodiment of separable interface.At first carry out step 6a, on ceramic bases 15, make an easy etching and the thick copper metal layer 35 of 0.7 μ m, carry out step 6b and 6c then, on copper metal layer 35, make thin-film component 20 and etching mouth 36 with circuit or micro electromechanical structure 21, then carry out step 6d, full wafer substrate 10 is inserted in the copper etchant solution, copper etchant solution can enter and copper metal layer 35 is carried out etching from etching mouth 36, after copper metal layer 35 was etched fully, thin-film component 20 natures separated with substrate 10.
The disclosed method that in manufacture of semiconductor or micro electronmechanical processing procedure, forms separable interface, its main application can be applicable to make a kind of various circuit films with electronic circuit, micro-structural and various microcomputer electric components or micro-electromechanical film (below be commonly referred to as micro-electromechanical film), especially, can be applicable to make and be not with the processing procedure substrate, have flexibility and upper and lower surface all can be made into the micro-electromechanical film that possesses circuit junction, micro-structural and various microcomputer electric components.
In the processing procedure of making this micro-electromechanical film, because be applied to the formation method of separable interface shown in the present, so formation one separable interface on a processing procedure substrate in advance, and after on described processing procedure substrate, finishing the processing procedure of micro-electromechanical film, separate described processing procedure substrate again, can take off made micro-electromechanical film goods.
Therefore, a kind of not with the processing procedure substrate and have the method for making of the micro-electromechanical film of flexibility, comprise the following steps that as shown in Figure 7 wherein step b) is to use the formation method of separable interface shown in the present:
Step a): provide a kind of rigid material to do the processing procedure substrate;
Step b): be processing procedure substrate fabrication separable interface;
Step c): on the separable interface of processing procedure substrate, make the micro-electromechanical film that possesses various electronic circuits, micro-structural or other microcomputer electric component with semiconductor crystal wafer processing procedure or micro electronmechanical processing procedure;
Step d): destroy the separable interface between processing procedure substrate and the micro-electromechanical film, processing procedure substrate and micro-electromechanical film are separated from each other;
Step e): take off micro-electromechanical film, perhaps, again the micro-electromechanical film that is taken off is carried out other follow-up processing procedure processing as required.
Fig. 8 is that the formation method of using separable interface shown in the present is made not with the processing procedure substrate and had the schematic diagram of embodiment of the micro-electromechanical film of flexibility.At first, prepare the processing procedure substrate 10 that rigid material is made, carry out step 8a then, coating two- layer policapram 33 and 34 continuously on processing procedure substrate 10, and make the not good and formation separable interface 30 of conjugation grade between two-layer policapram 33 and 34.Carry out step 8b then, on second layer policapram 34, make thin-film component 20, and reserve etching resistance cover layer 37 in the inside of described thin-film component 20 with circuit or micro electromechanical structure 21 with micro electronmechanical processing procedure.Behind completing steps 8b, carry out step 8c, streak separable interface 30 between the two- layer policapram 33,34 with the knife edge 40, processing procedure substrate 10 is separated with thin-film component 20, carry out step 8d again, promptly remove the policapram 34 of thin-film component 20 and other structure processing is carried out on another surface of thin-film component 20.Behind completing steps 8d, carry out step 8e at last, promptly remove etching resistance cover 37, a kind of not with the processing procedure substrate and have the making that flexibility, upper and lower surface possess the thin-film component 20 of circuit junction and micro-structural to finish.
Said method also can increase other processing procedure according to demand between each step, for example after step a), make a conductive metal layer earlier, carries out step b) again, makes successive process can utilize this conductive metal layer that conductive path is provided.Perhaps after step c), carry out assembling, structure dress or processing with other element earlier, carry out step d) again, avoid the unit of made because size is small or easy-to-hold and be difficult for assembling, structure dress or processing not.Embodiment as shown in figure 10, after step c), carry out the assembling of the circuit junction 52 of thin-film component 20 and other element 50 earlier, constitute after the electric connection, carry out step d) again, substrate 10 is removed, the thin-film component 20 of avoiding made because of size small or not easy-to-hold be difficult for assembling or structure dress.
Micro-electromechanical film among the present invention and method for making thereof are compared with micro-electromechanical film and method for making thereof that existing manufacture of semiconductor is made, and the present invention has following advantage or different characteristics:
1, uses the formation method of separable interface shown in the present, make the processing procedure substrate have a separable interface in advance;
2, made micro-electromechanical film goods and processing procedure substrate are independent respectively, and the characteristic of micro-electromechanical film goods only with the material of micro-electromechanical film itself and the structurally associated of made, can not be subjected to the influence of processing procedure substrate;
3, the processing procedure substrate of rigid material can be reused;
4, treat micro-electromechanical film and substrate separate after, can do processing such as etching or plating again to the another side of micro-electromechanical film, the upper and lower surface of micro-electromechanical film all can be processed;
5, easily with circuit and integrated inside or the two sides that is produced on micro-electromechanical film of various structure.
Therefore, the micro-electromechanical film goods with the formation method of separable interface shown in the present is made have the following advantages:
1, the processing procedure ability of the size of the microcomputer electric component of micro-electromechanical film or circuit, spacing is that existing printed circuit board (PCB) or soft board technology are beyond one's reach.
Because made micro-electromechanical film is with process technique manufacturings such as photolithography in semiconductor, processing procedure ability (line pitch pitch) can reach below the 20um easily.The manufacture of semiconductor technology can arrive below the micron (um) at present, and existing printed circuit board (PCB) or soft board process technique are difficult to reach below the 30um.
2, can make multilayer circuit and thin thickness.
For the circuit number of plies and thickness, the made micro-electromechanical film of the present invention is storehouse more than 10 layers easily, and thickness can be controlled at below the 200um.For example, if the dielectric bed thickness 10um of micro-electromechanical film, the thick 5um of lead, then 10 layers of gross thickness are less than 200um.Existing printed circuit board (PCB), soft board, cover technology such as brilliant substrate and then can't reach.
3, circuit junction and micro-structural can be produced in the not coplanar of micro-electromechanical film, and micro-electromechanical film also can not have influence on the micro-structural function of micro-electromechanical film another side when wherein the circuit junction forming circuit of one side links.
Using micro-electromechanical film that the formation method of separable interface shown in the present makes must simultaneously finish therein and make and have after various electronic circuits, micro-structural or other microcomputer electric component, separate with substrate again, and can carry out other successive process processing to the other one side of micro-electromechanical film again, the upper and lower surface of made thus micro-electromechanical film all can be made into has circuit junction or micro-structural.This upper and lower surface all have circuit junction or micro-structural micro-electromechanical film, have the following advantages: the upper and lower surface of micro-electromechanical film all can connect other element or electronic circuit; If the one side of micro-electromechanical film has circuit junction, and another side is when having micro-structural, and when then the circuit junction of micro-electromechanical film and other element or electronic circuit constituted electric connection, the micro-structural function of another side can not be affected yet.
Yet existing micro-electromechanical film is produced on circuit junction and micro-structural with one side, and this structure certainly will have influence on the effect of micro-electromechanical film element.
The formation method that thin-film component shown in Figure 9 20 is used separable interface of the present invention is made, and through follow-up processing procedure processing the upper and lower surface of thin-film component 20 is made respectively to have circuit junction 23 and micro electromechanical structure 24.The practical application of this thin-film component 20 is to make a kind of touch sensor, and when thin-film component 20 wherein the circuit junction 52 of circuit junction 23 and other circuit board 50 of one side constitute when electrically connecting, also can not have influence on micro electromechanical structure 24 functions of another side, do the time spent and can form circuit turn-on when thin-film component 20 is subjected to external force F.
4, the processing procedure material of micro-electromechanical film can adopt the material with flexibility, when micro-electromechanical film with after substrate separates, the micro-electromechanical film goods just have flexibility, these micro-electromechanical film goods with flexibility can be assembled on the various structures; But the existing micro-electromechanical film goods with substrate then do not have flexibility, so the scope of application can be restricted.
The made micro-electromechanical film of the present invention has flexibility, is the important advantage of the present invention.And the deflection characteristic of micro-electromechanical film, change according to selected processing procedure material is different.For example, the dielectric material of micro-electromechanical film is selected policapram (PI) for use, and metal material is when selecting copper, aluminium etc. for use, and micro-electromechanical film itself just has flexibility, and can use the flexibility of micro-electromechanical film that micro-electromechanical film is assembled on the uneven plane during assembling; Especially, the micro-electromechanical film with flexibility can differently with the soft or hard degree of the structure of assembling present different characteristics, and for example, if when being attached to above the elastomeric material, the structure that then has the micro-electromechanical film of flexibility also has elasticity.
5, the easy integrated making of the micro-structural of micro-electromechanical film and circuit reduces the degree of difficulty that assembling is connected with circuit.
Using micro-electromechanical film that the formation method of separable interface shown in the present makes must be made of one micro-structural and/or electronic circuit and micro-electromechanical film body, and this structure can reduce the processing procedure of micro-structure and the assembling of small circuit.In addition, as shown in figure 10, the made thin-film component 20 of the present invention can not separate with substrate 10 earlier yet, after the thin-film component 20 and the circuit junction 52 of other circuit board 50 are assembled the formation electric connection, substrate 10 is removed again.
Why circuit film or the micro-electromechanical film made with the formation method of separable interface shown in the present have above-mentioned advantage, be just can to separate with substrate and take off from substrate because circuit film or micro-electromechanical film are made the back that finishes in electronic circuit and micro-structural, except the electronic circuit and micro-structural that can not destroy substrate and circuit film or micro-electromechanical film, substrate is reused and reduced manufacturing cost, the variability of the processing procedure of circuit film or micro-electromechanical film is increased.
In addition, circuit film or the micro-electromechanical film made with separable interface manufacturing process shown in the present are the utilization semiconductor technologies, make figure and wire pitch more microminiaturization and multiple stratification, integrated circuit and mechanical structure and film are one simultaneously, make thin film circuit be applicable to that more the circuit board, crystal-coated packing substrate plate, panel circuit of various electronic products connect film, test card, MEMS Related product and various circuit connecting mechanisms etc., have purposes wide, be convenient to repeat to make and characteristic that cost is low.
Though the present invention is elaborated to above-mentioned preferred enforcement, essence of the present invention is not limited to the foregoing description.All technology of utilizing making micro-electromechanical film shown in the present, with integrated various circuit films or the micro-electromechanical film product of being made into of electronic circuit, micro-structural or electromechanical compo, so that product has the small processing procedure characteristic of semiconductor, and the concrete replacement and the improvement that do not have underlying structure, all do not break away from feature of the present invention and purpose, right still owns for the applicant.
Claims (8)
1. the manufacture method of a separable interface, be implemented in the manufacture of semiconductor or micro electronmechanical processing procedure of making integrated circuit component or microcomputer electric component, made integrated circuit component or microcomputer electric component are separated with employed processing procedure substrate in processing procedure, it is characterized in that, between the layer and layer of described processing procedure substrate and described integrated circuit component or microcomputer electric component, the policapram that does not add solid with coating constitutes the separable interface of a usefulness outside destroy or the separable interface of removing with the material formation one usefulness etching mode of easy etched removal.
2. the manufacture method of separable interface as claimed in claim 1 is characterized in that, forms the separable interface of easy etched removal in the processing procedure substrate of ceramic material with easy etched copper metal layer.
3. a manufacture method of using the micro-electromechanical film of separable interface can be made into the micro-electromechanical film of not being with the processing procedure underlying structure and having flexibility, and its making step comprises:
A) provide a rigid material to do the processing procedure substrate;
B) to the processing procedure substrate fabrication separable interface of step a);
On described processing procedure substrate, the policapram that does not add solid with coating constitutes the separable interface of a usefulness outside destroy or the separable interface of removing with the material formation one usefulness etching mode of easy etched removal;
C) on the separable interface of the processing procedure substrate of step b), make the micro-electromechanical film that possesses various electronic circuits, micro-structural or other microcomputer electric component with semiconductor crystal wafer processing procedure or micro electronmechanical processing procedure;
D) separable interface between destruction processing procedure substrate and the micro-electromechanical film is separated from each other processing procedure substrate and micro-electromechanical film;
E) take off micro-electromechanical film, or as required, again the micro-electromechanical film that is taken off is carried out follow-up processing procedure processing.
4. the manufacture method of the micro-electromechanical film of use separable interface as claimed in claim 3 is characterized in that, after step a), makes a conductive metal layer earlier on described processing procedure substrate, carries out step b) and subsequent step again.
5. as the manufacture method of the micro-electromechanical film of claim 3 or 4 described use separable interfaces, it is characterized in that, after step c), make various electronic circuits, micro-structural or other microcomputer electric component of described micro-electromechanical film and other element is assembled earlier, structure dress or processing, carry out step d) and subsequent step again.
6. the manufacture method of the micro-electromechanical film of use separable interface as claimed in claim 3, it is characterized in that, after step e) is taken off micro-electromechanical film, another side to the micro-electromechanical film that taken off carries out follow-up processing procedure processing again, makes the inside of micro-electromechanical film or upper and lower surface be provided with circuit junction, micro-structural or microcomputer electric component.
7. the manufacture method of the micro-electromechanical film of use separable interface as claimed in claim 5, it is characterized in that, after step e) is taken off micro-electromechanical film, another side to the micro-electromechanical film that taken off carries out follow-up processing procedure processing again, makes the inside of micro-electromechanical film or upper and lower surface be provided with circuit junction, micro-structural or microcomputer electric component.
8. micro-electromechanical film made from the manufacture method of claim 3, its structure be for having the processing procedure substrate and have flexibility, and in the inside of described micro-electromechanical film or up and down single face or two sides are provided with circuit junction, micro-structural or microcomputer electric component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101258647A CN100375236C (en) | 2005-11-30 | 2005-11-30 | Method of forming separable interface and producing micro-electromechanical film with the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101258647A CN100375236C (en) | 2005-11-30 | 2005-11-30 | Method of forming separable interface and producing micro-electromechanical film with the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1805120A CN1805120A (en) | 2006-07-19 |
| CN100375236C true CN100375236C (en) | 2008-03-12 |
Family
ID=36867057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101258647A Expired - Fee Related CN100375236C (en) | 2005-11-30 | 2005-11-30 | Method of forming separable interface and producing micro-electromechanical film with the method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100375236C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10125930A (en) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | Separation method |
| JP2003163337A (en) * | 2001-08-10 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | Stripping method and method for producing semiconductor device |
| US20050130391A1 (en) * | 2003-12-12 | 2005-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2005197673A (en) * | 2003-12-12 | 2005-07-21 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
-
2005
- 2005-11-30 CN CNB2005101258647A patent/CN100375236C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10125930A (en) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | Separation method |
| JP2003163337A (en) * | 2001-08-10 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | Stripping method and method for producing semiconductor device |
| US20050130391A1 (en) * | 2003-12-12 | 2005-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2005197673A (en) * | 2003-12-12 | 2005-07-21 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1805120A (en) | 2006-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101766261B1 (en) | Probe pin and method for manufacturing the same | |
| JP5550280B2 (en) | Multilayer wiring board | |
| KR100744736B1 (en) | Probes of probe card and the method of making the same | |
| KR100766213B1 (en) | Electronic component | |
| KR101043463B1 (en) | Multilayer ceramic board and manufacturing method thereof | |
| US9326378B2 (en) | Thin-film wiring substrate and substrate for probe card | |
| US20100301009A1 (en) | Method for forming electrode pattern of ceramic substrate | |
| US7209362B2 (en) | Multilayer ceramic substrate with a cavity | |
| WO2000069219A1 (en) | Hot plate and method of producing the same | |
| TW202005006A (en) | Singulated electronic substrates on a flexible or rigid carrier and related methods | |
| US8109769B1 (en) | Micromachined flex interposers | |
| JP3827311B2 (en) | Manufacturing method of common mode choke coil | |
| US20100206618A1 (en) | Coreless Substrate and Method for Making the Same | |
| CN100375236C (en) | Method of forming separable interface and producing micro-electromechanical film with the method | |
| WO2021109999A1 (en) | Humidity sensor and manufacturing method therefor | |
| CN101291562A (en) | Capacitor and its manufacture method | |
| CN103025057A (en) | Wiring substrate and method of manufacturing the same | |
| JP5982381B2 (en) | Circuit manufacturing method | |
| JP2000323845A (en) | Manufacture of electronic circuit mounting substrate | |
| US7445956B2 (en) | Flexible MEMS thin film without manufactured substrate and process for producing the same | |
| TWI444113B (en) | A circuit board with a hierarchical conductive unit | |
| US20080003819A1 (en) | Laser isolation of metal over alumina underlayer and structures formed thereby | |
| JP5685957B2 (en) | Thin film thermistor sensor and manufacturing method thereof | |
| JP2009099755A (en) | Thin-film resistor, and its manufacturing method | |
| KR20160111791A (en) | Method for manufacturing plate and probe card |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200612 Address after: 6 Guoguang lane, Shanying Road, Guishan District, Taoyuan, Taiwan, China Patentee after: RIGIDTECH MICROELECTRONICS Corp. Address before: No. 15-4, Manping 2nd Street, No. 16, xizhouli, Banqiao City, Taipei County, Taiwan, China Patentee before: Dong Menchang |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080312 Termination date: 20201130 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |